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FR1496453A - Silicon thyratrons - Google Patents

Silicon thyratrons

Info

Publication number
FR1496453A
FR1496453A FR79655A FR79655A FR1496453A FR 1496453 A FR1496453 A FR 1496453A FR 79655 A FR79655 A FR 79655A FR 79655 A FR79655 A FR 79655A FR 1496453 A FR1496453 A FR 1496453A
Authority
FR
France
Prior art keywords
thyratrons
silicon
silicon thyratrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR79655A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Application granted granted Critical
Publication of FR1496453A publication Critical patent/FR1496453A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/241Asymmetrical thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices
FR79655A 1965-10-13 1966-10-12 Silicon thyratrons Expired FR1496453A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB43430/65A GB1089407A (en) 1965-10-13 1965-10-13 Improvements in thyristors

Publications (1)

Publication Number Publication Date
FR1496453A true FR1496453A (en) 1967-09-29

Family

ID=10428720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR79655A Expired FR1496453A (en) 1965-10-13 1966-10-12 Silicon thyratrons

Country Status (3)

Country Link
FR (1) FR1496453A (en)
GB (1) GB1089407A (en)
NL (1) NL6614367A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01318263A (en) * 1988-06-20 1989-12-22 Meidensha Corp semiconductor element

Also Published As

Publication number Publication date
GB1089407A (en) 1967-11-01
NL6614367A (en) 1967-04-14

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