FR1496453A - Silicon thyratrons - Google Patents
Silicon thyratronsInfo
- Publication number
- FR1496453A FR1496453A FR79655A FR79655A FR1496453A FR 1496453 A FR1496453 A FR 1496453A FR 79655 A FR79655 A FR 79655A FR 79655 A FR79655 A FR 79655A FR 1496453 A FR1496453 A FR 1496453A
- Authority
- FR
- France
- Prior art keywords
- thyratrons
- silicon
- silicon thyratrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/241—Asymmetrical thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB43430/65A GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1496453A true FR1496453A (en) | 1967-09-29 |
Family
ID=10428720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR79655A Expired FR1496453A (en) | 1965-10-13 | 1966-10-12 | Silicon thyratrons |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1496453A (en) |
GB (1) | GB1089407A (en) |
NL (1) | NL6614367A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01318263A (en) * | 1988-06-20 | 1989-12-22 | Meidensha Corp | semiconductor element |
-
1965
- 1965-10-13 GB GB43430/65A patent/GB1089407A/en not_active Expired
-
1966
- 1966-10-12 NL NL6614367A patent/NL6614367A/xx unknown
- 1966-10-12 FR FR79655A patent/FR1496453A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1089407A (en) | 1967-11-01 |
NL6614367A (en) | 1967-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH470085A (en) | Semiconductor device | |
AT263084B (en) | Semiconductor device | |
FR1516435A (en) | Grinding improvements | |
AT264589B (en) | Semiconductor device | |
CH439617A (en) | Carrying device | |
AT269217B (en) | Semiconductor device | |
AT266694B (en) | Packaging sleeve | |
CH437539A (en) | Semiconductor device | |
CH437538A (en) | Controllable semiconductor element | |
AT273227B (en) | Semiconductor device | |
AT271583B (en) | Optoelectronic semiconductor device | |
AT254987B (en) | Semiconductor device | |
AT265432B (en) | Semiconductor component | |
CH444318A (en) | Semiconductor component | |
FR1496453A (en) | Silicon thyratrons | |
FR1481737A (en) | Semiconductor | |
CH443492A (en) | Semiconductor device | |
CH446539A (en) | Semiconductor component | |
FR1537646A (en) | Silicon planar transistor | |
AT261779B (en) | Functional fluid | |
BE683139A (en) | Semiconductor element | |
CH455050A (en) | Semiconductor diode | |
FR1433678A (en) | Penta-coordinated silicon complexes | |
FR1427512A (en) | Hexa-coordinated silicon complexes | |
FR1506367A (en) | Silicon body |