[go: up one dir, main page]

DE60336441D1 - Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode - Google Patents

Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode

Info

Publication number
DE60336441D1
DE60336441D1 DE60336441T DE60336441T DE60336441D1 DE 60336441 D1 DE60336441 D1 DE 60336441D1 DE 60336441 T DE60336441 T DE 60336441T DE 60336441 T DE60336441 T DE 60336441T DE 60336441 D1 DE60336441 D1 DE 60336441D1
Authority
DE
Germany
Prior art keywords
contact structure
thin
semiconductor device
production method
transistor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336441T
Other languages
English (en)
Inventor
Bum-Gee Baek
Kwon-Young Choi
Young-Joon Rhee
Bong-Joo Kang
Seung-Taek Lim
Hyang-Shik Kong
Won-Joo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020020052509A external-priority patent/KR100870014B1/ko
Priority claimed from KR1020020053220A external-priority patent/KR100870009B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60336441D1 publication Critical patent/DE60336441D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60336441T 2002-09-02 2003-09-01 Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode Expired - Lifetime DE60336441D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020020052509A KR100870014B1 (ko) 2002-09-02 2002-09-02 박막 트랜지스터 기판
KR1020020053220A KR100870009B1 (ko) 2002-09-04 2002-09-04 배선의 접촉부 및 그 제조 방법과 이를 포함하는 박막트랜지스터 어레이 기판 및 그 제조 방법

Publications (1)

Publication Number Publication Date
DE60336441D1 true DE60336441D1 (de) 2011-05-05

Family

ID=31497749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336441T Expired - Lifetime DE60336441D1 (de) 2002-09-02 2003-09-01 Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode

Country Status (6)

Country Link
US (2) US7294855B2 (de)
EP (1) EP1394597B1 (de)
JP (2) JP2004096115A (de)
CN (1) CN100465704C (de)
DE (1) DE60336441D1 (de)
TW (1) TWI293138B (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8514340B2 (en) * 2002-11-08 2013-08-20 Lg Display Co., Ltd. Method of fabricating array substrate having double-layered patterns
JP4802462B2 (ja) * 2004-07-27 2011-10-26 三菱電機株式会社 薄膜トランジスタアレイ基板の製造方法
KR20060016920A (ko) * 2004-08-19 2006-02-23 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100699995B1 (ko) * 2004-09-02 2007-03-26 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
CN102544027B (zh) * 2004-09-15 2016-02-17 株式会社半导体能源研究所 半导体器件
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
KR101100883B1 (ko) * 2004-11-08 2012-01-02 삼성전자주식회사 박막 트랜지스터 표시판
CN100552898C (zh) * 2006-01-24 2009-10-21 友达光电股份有限公司 薄膜晶体管及其制造方法
US7602199B2 (en) * 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) * 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
CN100498345C (zh) * 2006-07-24 2009-06-10 南茂科技股份有限公司 探针卡的制造方法
KR20080019398A (ko) * 2006-08-28 2008-03-04 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101394434B1 (ko) * 2007-06-29 2014-05-15 삼성디스플레이 주식회사 표시 장치 및 그의 구동 방법
KR101072379B1 (ko) * 2007-07-20 2011-10-11 엘지디스플레이 주식회사 리프트오프 방법 및 이를 이용한 액정표시장치용 어레이기판의 제조방법
CN101424837B (zh) * 2007-11-02 2010-08-25 上海中航光电子有限公司 液晶显示装置阵列基板的制造方法
KR20090110485A (ko) * 2008-04-18 2009-10-22 삼성전자주식회사 표시 기판, 이를 이용한 액정 표시 장치 및 어레이 기판의제조방법
CN101261962B (zh) * 2008-04-24 2010-08-18 友达光电股份有限公司 有源元件阵列基板及其制造方法
TWI469354B (zh) * 2008-07-31 2015-01-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI491048B (zh) 2008-07-31 2015-07-01 Semiconductor Energy Lab 半導體裝置
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN101930930B (zh) * 2009-06-26 2012-01-25 比亚迪股份有限公司 一种在氧化铟锡玻璃基板上形成铬铝铬金属走线的方法
TWI830077B (zh) * 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置
CN102034749B (zh) * 2009-09-25 2013-09-04 北京京东方光电科技有限公司 阵列基板及其制造方法
KR101320787B1 (ko) * 2010-07-21 2013-10-23 샤프 가부시키가이샤 기판 및 그 제조방법, 표시장치
JP5848918B2 (ja) 2010-09-03 2016-01-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101750430B1 (ko) * 2010-11-29 2017-06-26 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
KR102233959B1 (ko) * 2011-01-28 2021-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치
US8709920B2 (en) * 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102446732A (zh) * 2011-11-29 2012-05-09 上海华力微电子有限公司 提高多次曝光稳定性的栅极返工工艺
KR20140020565A (ko) * 2012-08-09 2014-02-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조방법
TWI627751B (zh) 2013-05-16 2018-06-21 半導體能源研究所股份有限公司 半導體裝置
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2015228426A (ja) * 2014-06-02 2015-12-17 大日本印刷株式会社 配線部材
CN104865765B (zh) * 2015-06-19 2018-10-30 合肥鑫晟光电科技有限公司 阵列基板及制作方法、显示面板及制作方法和显示装置
CN105068325A (zh) * 2015-08-31 2015-11-18 深圳市华星光电技术有限公司 Psva型液晶显示面板
CN105116642B (zh) * 2015-09-24 2018-07-17 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
JP2017143108A (ja) * 2016-02-08 2017-08-17 株式会社ジャパンディスプレイ 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR102598970B1 (ko) * 2016-07-29 2023-11-06 엘지디스플레이 주식회사 유기발광 다이오드 표시장치
CN106206324B (zh) * 2016-08-31 2019-03-26 深圳市华星光电技术有限公司 一种金属绝缘层半导体结构的制造方法
CN107037655A (zh) * 2017-05-26 2017-08-11 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示器件
CN112513725B (zh) * 2019-07-16 2023-10-13 京东方科技集团股份有限公司 阵列基板、显示面板、显示装置和阵列基板的制作方法
CN111710652A (zh) * 2020-06-12 2020-09-25 信利(仁寿)高端显示科技有限公司 一种tft基板的连接孔制作方法及tft基板

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
TW409194B (en) * 1995-11-28 2000-10-21 Sharp Kk Active matrix substrate and liquid crystal display apparatus and method for producing the same
KR100190023B1 (ko) * 1996-02-29 1999-06-01 윤종용 박막트랜지스터-액정표시장치 및 그 제조방법
KR100392909B1 (ko) * 1997-08-26 2004-03-22 엘지.필립스 엘시디 주식회사 박막트랜지스터및그의제조방법
KR100307385B1 (ko) 1997-03-05 2001-12-15 구본준, 론 위라하디락사 액정표시장치의구조및그제조방법
JP3102392B2 (ja) 1997-10-28 2000-10-23 日本電気株式会社 半導体デバイスおよびその製造方法
KR100316072B1 (ko) 1997-12-10 2002-11-27 엘지.필립스 엘시디 주식회사 액정 표시 장치 제조 방법 및 그 구조
KR100590742B1 (ko) * 1998-05-11 2007-04-25 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
JP4184522B2 (ja) 1999-01-29 2008-11-19 富士通株式会社 薄膜トランジスタ基板
JP3463006B2 (ja) * 1998-10-26 2003-11-05 シャープ株式会社 液晶表示装置の製造方法および液晶表示装置
US6255130B1 (en) * 1998-11-19 2001-07-03 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
JP2000267595A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 表示装置用アレイ基板の製造方法
US6218221B1 (en) * 1999-05-27 2001-04-17 Chi Mei Optoelectronics Corp. Thin film transistor with a multi-metal structure and a method of manufacturing the same
US6380559B1 (en) * 1999-06-03 2002-04-30 Samsung Electronics Co., Ltd. Thin film transistor array substrate for a liquid crystal display
KR100333273B1 (ko) * 1999-08-02 2002-04-24 구본준, 론 위라하디락사 박막트랜지스터형 액정표시장치의 어레이기판과 그 제조방법
US6885064B2 (en) * 2000-01-07 2005-04-26 Samsung Electronics Co., Ltd. Contact structure of wiring and a method for manufacturing the same
KR100366768B1 (ko) * 2000-04-19 2003-01-09 삼성전자 주식회사 배선의 접촉부 및 그의 제조 방법과 이를 포함하는 박막 트랜지스터 기판 및 그 제조 방법
JP4630420B2 (ja) * 2000-05-23 2011-02-09 ティーピーオー ホンコン ホールディング リミテッド パターン形成方法
KR100751185B1 (ko) * 2000-08-08 2007-08-22 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
JP4342711B2 (ja) * 2000-09-20 2009-10-14 株式会社日立製作所 液晶表示装置の製造方法
TWI220029B (en) * 2000-10-12 2004-08-01 Au Optronics Corp Thin film transistor liquid crystal display and its manufacturing method
KR100720095B1 (ko) * 2000-11-07 2007-05-18 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100729764B1 (ko) 2000-11-15 2007-06-20 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR100750919B1 (ko) 2001-02-05 2007-08-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
KR20020083249A (ko) * 2001-04-26 2002-11-02 삼성전자 주식회사 배선의 접촉 구조 및 그의 제조 방법과 이를 포함하는박막 트랜지스터 기판 및 그 제조 방법
KR100412619B1 (ko) * 2001-12-27 2003-12-31 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판의 제조 방법

Also Published As

Publication number Publication date
TW200500759A (en) 2005-01-01
JP2010271732A (ja) 2010-12-02
CN1495478A (zh) 2004-05-12
US20040041149A1 (en) 2004-03-04
JP2004096115A (ja) 2004-03-25
US20080044996A1 (en) 2008-02-21
EP1394597A3 (de) 2006-06-21
US7294855B2 (en) 2007-11-13
EP1394597B1 (de) 2011-03-23
JP5302275B2 (ja) 2013-10-02
TWI293138B (en) 2008-02-01
CN100465704C (zh) 2009-03-04
US7883942B2 (en) 2011-02-08
EP1394597A2 (de) 2004-03-03

Similar Documents

Publication Publication Date Title
DE60336441D1 (de) Kontaktstruktur für eine Halbleitervorrichtung, dünnschichtige Transistoranordnung mit einer solchen Kontaktstruktur und dessen Herstellungsmethode
DE60238152D1 (de) Elektrodenstruktur für Halbleitervorrichtung, sowie Herstellungsverfahren und -apparatur
DE60042187D1 (de) Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
EP1482561A4 (de) Organische halbleiterstruktur, prozess zu ihrer herstellung und organisches halbleiterbauelement
GB2420017B (en) Thin-film transistor substrate, and its production method
AU2003243002A1 (en) Organic semiconductor element, production method therefor and organic semiconductor device
DE60045088D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE60319898D1 (de) Halbleiter-Bauelement und Herstellungsverfahren
DE69938767D1 (de) Halbleiterbauelement und dessen herstellungsverfahren, bauelementsubstrat, und elektronisches bauelement
DE60045755D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren
AU2003235902A1 (en) Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
DE60038996D1 (de) Herstellungsverfahren für Halbleiterbauelement mit isoliertem Gate
AU2003303885A1 (en) Semiconductor substrate, field-effect transistor, and their production methods
DE60030279D1 (de) Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode
TWI316293B (en) Semiconductor device and method for manufacturing the same
DE60038323D1 (de) Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement
DE60228780D1 (de) Halbleiterbauelement, zugehöriges Herstellungsverfahren und Flüssigkeitsstrahl-Vorrichtung
EP1173885A4 (de) Doppelprozess-halbleiter-heterostrukturen und methoden
DE60041638D1 (de) Herstellungsverfahren für halbleiterbauelement mit selbstjustierter kontaktstruktur
AU2003207387A1 (en) Organic semiconductor device and method for manufacturing the same
GB2416919B (en) Organic functional element, organic EL element, organic semiconductor element, organic TFT element and method for producing the same
DE60141670D1 (de) Halbleiterspeicherbauelement, dessen Herstellungsverfahren und dessen Betriebsweise
SG119329A1 (en) Semiconductor device and method for manufacturing the same
GB2445487B (en) Transistor, method for manufacturing same, and semiconductor device comprising such transistor
DE60030559D1 (de) Schieberventil für halbleiterbehandlungsvorrichtung