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CN105068325A - Psva型液晶显示面板 - Google Patents

Psva型液晶显示面板 Download PDF

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Publication number
CN105068325A
CN105068325A CN201510548278.7A CN201510548278A CN105068325A CN 105068325 A CN105068325 A CN 105068325A CN 201510548278 A CN201510548278 A CN 201510548278A CN 105068325 A CN105068325 A CN 105068325A
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China
Prior art keywords
passivation layer
substrate
display panels
type display
liquid crystal
Prior art date
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Pending
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CN201510548278.7A
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English (en)
Inventor
甘启明
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201510548278.7A priority Critical patent/CN105068325A/zh
Priority to PCT/CN2015/091804 priority patent/WO2017035915A1/zh
Priority to US14/787,766 priority patent/US9817280B2/en
Publication of CN105068325A publication Critical patent/CN105068325A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
    • G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133742—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers for homeotropic alignment
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明提供一种PSVA型液晶显示面板，包括上基板(1)、与上基板(1)相对设置的下基板(2)、及位于上基板(1)与下基板(2)之间的液晶层；所述下基板(2)包括第二基板(21)、薄膜晶体管、钝化层(22)、以及像素电极(23)；所述下基板(2)具有数个像素区域，所述钝化层(22)为图案化的钝化层，对应数个像素区域内分别形成有相同的图案，所述图案包括向不同方向延伸的数道沟槽(221)；所述像素电极(23)整面附着于图案化的钝化层(22)上而随钝化层(22)具有相应的图案；所述沟槽(221)的深度为。本发明的PSVA型液晶显示面板具有较高的穿透率和优良的光学表现。

Description

PSVA型液晶显示面板
技术领域
本发明涉及显示技术领域，尤其涉及一种PSVA型液晶显示面板。
背景技术
主动式薄膜晶体管液晶显示器(ThinFilmTransistor-LCD，TFT-LCD)近年来得到了飞速的发展和广泛的应用。就目前主流市场上的TFT-LCD显示面板而言，可分为三种类型，分别是扭曲向列(TwistedNematic，TN)或超扭曲向列(SuperTwistedNematic，STN)型，平面转换(In-PlaneSwitching，IPS)型、及垂直配向(VerticalAlignment，VA)型。其中VA型液晶显示器相对其他种类的液晶显示器具有极高的对比度，在大尺寸显示，如电视等方面具有非常广的应用。
VA型液晶显示面板之所以具有极高的对比度是因为在不加电的暗态时，液晶分子垂直于基板表面排列，不产生任何相位差，漏光极低，暗态亮度很小，根据对比度计算公式暗态亮度越低，则对比度越高。由于VA型液晶显示面板采用垂直转动的液晶，液晶分子双折射率的差异比较大，导致大视角下的色偏(colorshift)问题比较严重。为了使VA型液晶显示面板获得更好的广视角特性，改善色偏问题，通常会采取多畴VA技术(Multi-domainVA，MVA)，即将一个子像素划分成多个区域，并使每个区域中的液晶在施加电压后倒伏向不同的方向，从而使各个方向看到的效果趋于平均，一致。实现MVA技术的方法有多种，其中一种方法是将一侧的ITO像素电极处理成“米字型”图案，由于特殊的ITO像素电极图案，其产生的倾斜电场可以诱导不同区域中的液晶分子倒向不同的方向。
随着技术的发展，出现了相关的改进，聚合物稳定垂直配向(polymer-stabilizedverticalalignment，PSVA)广视角技术能够使液晶显示面板具有较快的响应时间、及穿透率高等优点，其特点是在配向膜表面形成聚合物突起，从而使液晶分子具有预倾角。一般的PSVA像素结构是在阵列基板上的用于沟道保护的钝化层(Passivation)做完后，将沉积在其上的像素电极做图案化处理。如图1、及图2所示，为现有的一种PSVA型液晶显示面板，包括上基板100和下基板200，上基板100包括第一基板110和平面型的公共电极120，下基板200包括第二基板210、钝化层220、及像素电极230，该像素电极230具有“米字型”图案。然而，由于被处理成“米字型”图案的像素电极230具有向不同方向延伸的像素电极分支与狭缝间隔的图案，导致其与对侧的上基板110上的公共电极120形成的电场不均，对应于像素电极分支区域的电场明显强于对应于狭缝区域的电场，从而导致像素内出现亮度不均的现象。
为了解决传统PSVA型液晶显示面板存在的问题，人们提出一种新型的PSVA型液晶显示面板，通过在钝化层上形成图案，得到数道沟槽，然后在整个钝化层上覆盖整面的像素电极；相比于传统的PSVA型液晶显示面板，该PSVA型液晶显示面板具有穿透率高、对盒厚(cellgap)和线宽/间隔(Line/Space)不敏感等优势。然而不同的沟槽深度，会获得不同的穿透率，而现在到底什么样的沟槽深度可以使液晶显示面板获得最优的光学表现还尚存疑虑，这将给工艺调试带来不确定性。
发明内容
本发明的目的在于提供一种PSVA型液晶显示面板，具有较高的穿透率，和良好的像素品质，缩小了面板生产的工艺范围，从而可缩短工艺调试的时间，提高产品生产效率。
为实现上述目的，本发明提供一种PSVA型液晶显示面板，包括上基板、与所述上基板相对设置的下基板、及位于所述上基板与下基板之间的液晶层；
所述上基板包括第一基板、及设于所述第一基板上的公共电极；
所述下基板包括第二基板、设于所述第二基板上的薄膜晶体管、设于所述第二基板与薄膜晶体管上的钝化层、以及设于所述钝化层上的像素电极；
所述下基板具有数个像素区域，所述钝化层对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽；
所述像素电极为厚度均匀、连续不间断的整面电极；所述像素电极整面附着于图案化的钝化层上而随钝化层具有相应的图案；
所述沟槽的深度为
所述钝化层的厚度≥
对应于每一个像素区域，该钝化层被划分为四个子区域。
所述图案为“米字型”图案，所述钝化层在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽位于相邻两个条状分支之间。
所述夹角为45度。
所述钝化层的材料为氮化硅。
所述公共电极、及像素电极的材料为ITO。
所述薄膜晶体管包括漏极，所述钝化层对应所述漏极的上方设有过孔，所述像素电极穿过该过孔与所述薄膜晶体管的漏极相连接。
所述过孔与沟槽通过一道灰阶光罩经由黄光制程同时制得。
所述公共电极为厚度均匀、连续不间断的平面型公共电极。
本发明的有益效果：本发明的PSVA型液晶显示面板，钝化层为图案化的钝化层，该图案化的钝化层具有数道间隔排列的沟槽，像素电极为厚度均匀、连续不间断的整面电极，整面的像素电极通过附着在该图案化的钝化层上而随钝化层具有相应的图案，从而使得液晶面板具有较高的穿透率；并且通过将所述沟槽的深度设置为使液晶面板取得了良好的光学表现的同时，缩小了面板生产的工艺范围，缩短了工艺调试的时间，提高了产品生产效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为一种现有的PSVA型液晶显示面板的立体结构示意图；
图2为图1的PSVA型液晶显示面板的下基板的剖面结构示意图；
图3为本发明的PSVA型液晶显示面板的立体结构示意图；
图4为图3的PSVA型液晶显示面板的下基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3至图4，本发明提供一种PSVA型液晶显示面板，包括上基板1、与所述上基板1相对设置的下基板2、及位于所述上基板1与下基板2之间的液晶层(未图示)；
所述上基板1包括第一基板11、及设于所述第一基板11上的公共电极12；
所述下基板2包括第二基板21、设于所述第二基板21上的薄膜晶体管、设于所述第二基板21与薄膜晶体管上的钝化层22、以及设于所述钝化层22上的像素电极23；
所述下基板2具有数个像素区域，所述钝化层22为图案化的钝化层，所述钝化层22对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽221；
所述像素电极23为厚度均匀、连续不间断的整面电极；如图3所示，该整面的像素电极23覆盖于图案化的钝化层22上，从而随着钝化层22而具有相应的图案。
在PSVA型液晶显示面板中，沟槽221的深度是一个极为重要的参数，沟槽221的深度极大地影响着液晶倒向及液晶显示面板的光学表现，钝化层22上的沟槽221的深度不同，则对应的液晶面板的穿透率也不同，现有的PSVA型液晶显示面板中并没有对沟槽221的深度作出具体的界定，因此导致可选择的工艺参数及获得的光学表现很随机。本发明中，所述沟槽221的深度为此时液晶的配向效果最好，液晶面板具有最优的光学表现。
具体的，所述钝化层22的厚度≥所述沟槽221可根据需要设置为不同的宽度。
具体的，如图3所示，对应于每一个像素区域，该图案化的钝化层22被划分为四个子区域；所述图案化的钝化层22具有“米字型”图案，所述钝化层22在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽221位于相邻两个条状分支之间。具体的，所述夹角为45度。
具体的，所述钝化层221的材料为氮化硅。
具体的，所述公共电极12、及像素电极23的材料为透明的ITO。
具体的，如图4所示，所述薄膜晶体管包括一漏极24，所述钝化层22对应所述漏极24的上方设有过孔223，所述像素电极23穿过该过孔223与所述薄膜晶体管的漏极24相连接。
具体的，所述过孔223与沟槽221可通过一道灰阶光罩(GrayToneMask，GTM)经由黄光制程同时制得，相比于传统的PSVA型液晶显示面板，并不会增加制程的复杂性。
具体的，如图3所示，所述公共电极12为厚度均匀、连续不间断的平面型公共电极。
综上所述，本发明的PSVA型液晶显示面板，钝化层为图案化的钝化层，该图案化的钝化层具有数道间隔排列的沟槽，像素电极为厚度均匀、连续不间断的整面电极，整面的像素电极通过附着在该图案化的钝化层上而随钝化层具有相应的图案，从而使得液晶面板具有较高的穿透率；并且通过将所述沟槽的深度设置为使液晶面板取得了良好的光学表现的同时，缩小了面板生产的工艺范围，缩短了工艺调试的时间，提高了产品生产效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种PSVA型液晶显示面板，其特征在于，包括上基板(1)、与所述上基板(1)相对设置的下基板(2)、及位于所述上基板(1)与下基板(2)之间的液晶层；
所述上基板(1)包括第一基板(11)、及设于所述第一基板(11)上的公共电极(12)；
所述下基板(2)包括第二基板(21)、设于所述第二基板(21)上的薄膜晶体管、设于所述第二基板(21)与薄膜晶体管上的钝化层(22)、以及设于所述钝化层(22)上的像素电极(23)；
所述下基板(2)具有数个像素区域，所述钝化层(22)对应所述数个像素区域内分别形成有相同的图案；所述图案包括向不同方向延伸的数道沟槽(221)；
所述像素电极(23)为厚度均匀、连续不间断的整面电极；所述像素电极(23)整面附着于图案化的钝化层(22)上而随钝化层(22)具有相应的图案；
所述沟槽(221)的深度为
2.如权利要求1所述的PSVA型液晶显示面板，其特征在于，所述钝化层(22)的厚度
3.如权利要求1所述的PSVA型液晶显示面板，其特征在于，对应于每一个像素区域，该钝化层(22)被划分为四个子区域。
4.如权利要求3所述的PSVA型液晶显示面板，其特征在于，所述图案为“米字型”图案，所述钝化层(22)在每一个像素区域内均包括竖直主干、与所述竖直主干垂直相交的水平主干、以及分别与所述竖直主干或水平主干相连接并分别向四周延伸的数个条状分支；所述数个条状分支相互间隔且与所述竖直主干或水平主干成一夹角；所述沟槽(221)位于相邻两个条状分支之间。
5.如权利要求4所述的PSVA型液晶显示面板，其特征在于，所述夹角为45度。
6.如权利要求1所述的PSVA型液晶显示面板，其特征在于，所述钝化层(22)的材料为氮化硅。
7.如权利要求1所述的PSVA型液晶显示面板，其特征在于，所述公共电极(12)、及像素电极(23)的材料为ITO。
8.如权利要求1所述的PSVA型液晶显示面板，其特征在于，所述薄膜晶体管包括漏极(24)，所述钝化层(22)对应所述漏极(24)的上方设有过孔(223)，所述像素电极(23)穿过该过孔(223)与所述薄膜晶体管的漏极(24)相连接。
9.如权利要求8所述的PSVA型液晶显示面板，其特征在于，所述过孔(223)与沟槽(221)通过一道灰阶光罩经由黄光制程同时制得。
10.如权利要求1所述的PSVA型液晶显示面板，其特征在于，所述公共电极(12)为厚度均匀、连续不间断的平面型公共电极。
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Publication number Priority date Publication date Assignee Title
WO2017124596A1 (zh) * 2016-01-19 2017-07-27 深圳市华星光电技术有限公司 液晶显示面板及液晶显示装置
CN107170763A (zh) * 2017-06-20 2017-09-15 深圳市华星光电技术有限公司 一种阵列基板及其制作方法和液晶显示面板
WO2018232907A1 (zh) * 2017-06-20 2018-12-27 深圳市华星光电半导体显示技术有限公司 一种阵列基板及其制作方法和液晶显示面板
CN107340656A (zh) * 2017-09-08 2017-11-10 深圳市华星光电技术有限公司 像素电极及制作方法、显示面板
CN109856879A (zh) * 2019-04-09 2019-06-07 惠科股份有限公司 像素结构及其制作方法和显示面板

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Application publication date: 20151118