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DE60139958D1 - Infrarotsensor - Google Patents

Infrarotsensor

Info

Publication number
DE60139958D1
DE60139958D1 DE60139958T DE60139958T DE60139958D1 DE 60139958 D1 DE60139958 D1 DE 60139958D1 DE 60139958 T DE60139958 T DE 60139958T DE 60139958 T DE60139958 T DE 60139958T DE 60139958 D1 DE60139958 D1 DE 60139958D1
Authority
DE
Germany
Prior art keywords
infrared sensor
infrared
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139958T
Other languages
English (en)
Inventor
Katsumi Shibayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Application granted granted Critical
Publication of DE60139958D1 publication Critical patent/DE60139958D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
DE60139958T 2001-04-10 2001-04-10 Infrarotsensor Expired - Lifetime DE60139958D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/003077 WO2002084235A1 (en) 2001-04-10 2001-04-10 Infrared sensor

Publications (1)

Publication Number Publication Date
DE60139958D1 true DE60139958D1 (de) 2009-10-29

Family

ID=29727309

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139958T Expired - Lifetime DE60139958D1 (de) 2001-04-10 2001-04-10 Infrarotsensor

Country Status (8)

Country Link
US (1) US7282712B2 (de)
EP (1) EP1378733B1 (de)
JP (1) JP4009046B2 (de)
KR (1) KR100794067B1 (de)
CN (2) CN100462697C (de)
DE (1) DE60139958D1 (de)
TW (1) TWI248513B (de)
WO (1) WO2002084235A1 (de)

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DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
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JP2005241457A (ja) 2004-02-26 2005-09-08 Hamamatsu Photonics Kk 赤外線センサ及びその製造方法
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US8723787B2 (en) 2008-06-17 2014-05-13 The Invention Science Fund I, Llc Methods and systems related to an image capture projection surface
US8608321B2 (en) 2008-06-17 2013-12-17 The Invention Science Fund I, Llc Systems and methods for projecting in response to conformation
US8641203B2 (en) 2008-06-17 2014-02-04 The Invention Science Fund I, Llc Methods and systems for receiving and transmitting signals between server and projector apparatuses
US8403501B2 (en) 2008-06-17 2013-03-26 The Invention Science Fund, I, LLC Motion responsive devices and systems
US8820939B2 (en) 2008-06-17 2014-09-02 The Invention Science Fund I, Llc Projection associated methods and systems
US8540381B2 (en) 2008-06-17 2013-09-24 The Invention Science Fund I, Llc Systems and methods for receiving information associated with projecting
US8308304B2 (en) 2008-06-17 2012-11-13 The Invention Science Fund I, Llc Systems associated with receiving and transmitting information related to projection
US8602564B2 (en) 2008-06-17 2013-12-10 The Invention Science Fund I, Llc Methods and systems for projecting in response to position
US8267526B2 (en) 2008-06-17 2012-09-18 The Invention Science Fund I, Llc Methods associated with receiving and transmitting information related to projection
US8936367B2 (en) 2008-06-17 2015-01-20 The Invention Science Fund I, Llc Systems and methods associated with projecting in response to conformation
US8944608B2 (en) 2008-06-17 2015-02-03 The Invention Science Fund I, Llc Systems and methods associated with projecting in response to conformation
US20090309826A1 (en) 2008-06-17 2009-12-17 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Systems and devices
US8733952B2 (en) 2008-06-17 2014-05-27 The Invention Science Fund I, Llc Methods and systems for coordinated use of two or more user responsive projectors
US8384005B2 (en) 2008-06-17 2013-02-26 The Invention Science Fund I, Llc Systems and methods for selectively projecting information in response to at least one specified motion associated with pressure applied to at least one projection surface
KR101008260B1 (ko) * 2008-06-27 2011-01-13 (주)엔아이디에스 적외선 센서 및 그 제조방법
DE102008041131B4 (de) * 2008-08-08 2020-07-30 Robert Bosch Gmbh Thermopile-Sensor zur Detektion von Infrarot-Strahlung
KR101199904B1 (ko) * 2008-09-25 2012-11-09 파나소닉 주식회사 적외선 센서
US8304851B2 (en) 2010-03-30 2012-11-06 Texas Instruments Incorporated Semiconductor thermocouple and sensor
EP2558830A4 (de) * 2010-04-14 2015-03-11 Excelitas Technologies Singapore Pte Ltd Vertikal gestapelte wärmesäule
JP5558189B2 (ja) * 2010-04-26 2014-07-23 浜松ホトニクス株式会社 赤外線センサ及びその製造方法
CN102947683B (zh) * 2010-04-26 2016-04-06 Hme有限公司 多层薄膜热电堆及采用该多层薄膜热电堆的辐射温度计、多层薄膜热电堆的制造方法
US8441093B2 (en) * 2011-04-15 2013-05-14 Excelitas Technologies Singapore Pte. Ltd. Shared membrane thermopile sensor array
TWI452272B (zh) * 2011-05-24 2014-09-11 Univ Nat Kaohsiung Applied Sci Thermopile sensing element
GB201112430D0 (en) * 2011-07-20 2011-08-31 Melexis Tessenderlo Nv IR sensor design
CN102322961B (zh) * 2011-07-27 2017-02-22 中国科学院上海微系统与信息技术研究所 一种具有高占空比的微机械热电堆红外探测器及制作方法
US9784577B2 (en) * 2012-03-16 2017-10-10 Lg Innotek Co., Ltd. Measuring distance from object by using size of pattern projected onto object
US9219185B2 (en) 2013-12-19 2015-12-22 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for the fabrication of thermopile pixel with umbrella absorber on semiconductor substrate
US9373772B2 (en) 2014-01-15 2016-06-21 Excelitas Technologies Singapore Pte. Ltd. CMOS integrated method for the release of thermopile pixel on a substrate by using anisotropic and isotropic etching
US9324760B2 (en) * 2014-01-21 2016-04-26 Excelitas Technologies Singapore Pte. Ltd CMOS integrated method for fabrication of thermopile pixel on semiconductor substrate with buried insulation regions
JP6467172B2 (ja) * 2014-09-16 2019-02-06 ヤマハファインテック株式会社 接触燃焼式ガスセンサ
TWI569427B (zh) * 2014-10-22 2017-02-01 精材科技股份有限公司 半導體封裝件及其製法
CN104501983B (zh) * 2015-01-08 2017-03-22 上海新微技术研发中心有限公司 一种褶皱膜温度传感器及其制作方法
JP6467254B2 (ja) * 2015-03-16 2019-02-06 ヤマハファインテック株式会社 赤外線センサ
US10203252B2 (en) 2016-12-29 2019-02-12 Industrial Technology Research Institute Microelectromechanical apparatus having a measuring range selector
CA3213747A1 (en) * 2018-10-12 2020-04-16 Amphenol Thermometrics, Inc. Ndir sensor, sampling method and system for breath analysis
US11480479B2 (en) * 2019-02-04 2022-10-25 The Board Of Trustees Of The University Of Illinois Microscale thermocouple probe for intracellular temperature measurements
CN113677962A (zh) * 2019-03-27 2021-11-19 松下知识产权经营株式会社 红外传感器和配备有红外传感器的红外传感器装置
WO2021006034A1 (ja) * 2019-07-05 2021-01-14 住友電気工業株式会社 光センサ
JP7258800B2 (ja) 2020-03-02 2023-04-17 Ｍｍｉセミコンダクター株式会社 サーモパイル型センサ
RU2752728C1 (ru) * 2021-01-18 2021-07-30 Федеральное государственное казенное учреждение "12 Центральный научно-исследовательский институт" Министерства обороны Российской Федерации Устройство для измерения энергетических параметров светового излучения

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Also Published As

Publication number Publication date
CN100462697C (zh) 2009-02-18
JP4009046B2 (ja) 2007-11-14
CN1488070A (zh) 2004-04-07
CN1758035A (zh) 2006-04-12
US7282712B2 (en) 2007-10-16
JP2001201397A (ja) 2001-07-27
KR100794067B1 (ko) 2008-01-10
EP1378733A4 (de) 2007-03-21
EP1378733A1 (de) 2004-01-07
EP1378733B1 (de) 2009-09-16
CN1236292C (zh) 2006-01-11
WO2002084235A1 (en) 2002-10-24
US20030205670A1 (en) 2003-11-06
KR20030091979A (ko) 2003-12-03
TWI248513B (en) 2006-02-01

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