DE3885191D1 - Nichtflüchtige latente Speicherzelle mit reduzierter Tunneleffektschaltung für verbesserte Betriebssicherheit. - Google Patents

Nichtflüchtige latente Speicherzelle mit reduzierter Tunneleffektschaltung für verbesserte Betriebssicherheit.

Info

Publication number: DE3885191D1
Authority: DE; Germany
Prior art keywords: memory cell; operational safety; tunnel effect; improved operational; effect circuit
Prior art date: 1987-08-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE88401991T

Other languages

English (en)

Other versions

DE3885191T2 (de

Inventor

George Dater O'brien

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-08-03

Filing date

1988-07-29

Publication date

1993-12-02

1988-07-29 Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc

1993-12-02 Application granted granted Critical

1993-12-02 Publication of DE3885191D1 publication Critical patent/DE3885191D1/de

1994-05-05 Publication of DE3885191T2 publication Critical patent/DE3885191T2/de

2008-07-30 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

DE88401991T 1987-08-03 1988-07-29 Nichtflüchtige latente Speicherzelle mit reduzierter Tunneleffektschaltung für verbesserte Betriebssicherheit. Expired - Fee Related DE3885191T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/081,032 US4802124A (en)	1987-08-03	1987-08-03	Non-volatile shadow storage cell with reduced tunnel device count for improved reliability

Publications (2)

Publication Number	Publication Date
DE3885191D1 true DE3885191D1 (de)	1993-12-02
DE3885191T2 DE3885191T2 (de)	1994-05-05

Family

ID=22161684

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE88401991T Expired - Fee Related DE3885191T2 (de)	1987-08-03	1988-07-29	Nichtflüchtige latente Speicherzelle mit reduzierter Tunneleffektschaltung für verbesserte Betriebssicherheit.

Country Status (4)

Country	Link
US (1)	US4802124A (de)
EP (1)	EP0302780B1 (de)
JP (1)	JP2696769B2 (de)
DE (1)	DE3885191T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5189641A (en) *	1987-06-08	1993-02-23	Fujitsu Limited	Non-volatile random access memory device
US5434811A (en) *	1987-11-19	1995-07-18	National Semiconductor Corporation	Non-destructive read ferroelectric based memory circuit
IT1228822B (it) *	1989-03-23	1991-07-04	Sgs Thomson Microelectronics	Cella di riferimento per la lettura di dispositivi di memoria eeprom.
JP3569728B2 (ja) *	1995-01-11	2004-09-29	直柴田	不揮発性半導体メモリ装置
EP2382297B1 (de)	2008-12-25	2019-01-23	Dow Global Technologies LLC	Tensidzusammensetzungen mit weiter ph-stabilität
US9715480B1 (en) *	2011-06-24	2017-07-25	United States Of America As Represented By Secretary Of The Navy	Method for analytical reconstruction of digital signals via stitched polynomial fitting

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54150955A (en) *	1978-05-18	1979-11-27	Mitsubishi Electric Corp	Voltage converter circuit
US4545035A (en) *	1982-07-20	1985-10-01	Mostek Corporation	Dynamic RAM with nonvolatile shadow memory
US4510584A (en) *	1982-12-29	1985-04-09	Mostek Corporation	MOS Random access memory cell with nonvolatile storage
IT1212765B (it) *	1983-07-27	1989-11-30	Ates Componenti Elettron	Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.
NL8501631A (nl) *	1985-06-06	1987-01-02	Philips Nv	Niet vluchtige, programmeerbare, statische geheugencel en een niet vluchtig, programmeerbaar statisch geheugen.
US4651303A (en) *	1985-09-23	1987-03-17	Thomson Components--Mostek Corporation	Non-volatile memory cell
US4685083A (en) *	1985-10-03	1987-08-04	Thomson Components-Mostek Corporation	Improved nonvolatile memory circuit using a dual node floating gate memory cell

1987
- 1987-08-03 US US07/081,032 patent/US4802124A/en not_active Expired - Lifetime
1988
- 1988-07-29 DE DE88401991T patent/DE3885191T2/de not_active Expired - Fee Related
- 1988-07-29 EP EP88401991A patent/EP0302780B1/de not_active Expired - Lifetime
- 1988-08-03 JP JP19428788A patent/JP2696769B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US4802124A (en)	1989-01-31
JP2696769B2 (ja)	1998-01-14
DE3885191T2 (de)	1994-05-05
EP0302780A3 (en)	1990-11-07
EP0302780A2 (de)	1989-02-08
JPH01112594A (ja)	1989-05-01
EP0302780B1 (de)	1993-10-27

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Legal Events

Date	Code	Title	Description
1994-11-24	8364	No opposition during term of opposition
2000-09-07	8339	Ceased/non-payment of the annual fee