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JPS54150955A - Voltage converter circuit - Google Patents

Voltage converter circuit

Info

Publication number
JPS54150955A
JPS54150955A JP5961178A JP5961178A JPS54150955A JP S54150955 A JPS54150955 A JP S54150955A JP 5961178 A JP5961178 A JP 5961178A JP 5961178 A JP5961178 A JP 5961178A JP S54150955 A JPS54150955 A JP S54150955A
Authority
JP
Japan
Prior art keywords
circuit
output
input
output step
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5961178A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Isato Kazama
Hideharu Toyomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5961178A priority Critical patent/JPS54150955A/en
Publication of JPS54150955A publication Critical patent/JPS54150955A/en
Pending legal-status Critical Current

Links

Landscapes

  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE: To obtain a circuit featuring an extremely small amount of power consumption by using the C-MOS circuit containing the flip-flop consisting of the different conduction-type MOS transistor at the output step.
CONSTITUTION: The voltage converter circuit possesses C-MOS inverter 16 and 17 at the input step plus FF18a, 18b, 19a and 19b each at the output step. The power source of inverter 16 and 17 are shared with the input signal, and the power source of the FF at the output step is shared with the output signal each. The input signal is supplied directly to one input terminal of FF and to the other input terminal via inverter 16 and 17. The output signal is obtained from terminal 12a and 12b of the FF at the output step, and two output signals inverse to each other are obtained through terminal 12a and 12b as well. Accordingly, the circuit features an extremely small amount of power consumption since only the power due to the transient current component is consumed for the circuit.
COPYRIGHT: (C)1979,JPO&Japio
JP5961178A 1978-05-18 1978-05-18 Voltage converter circuit Pending JPS54150955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5961178A JPS54150955A (en) 1978-05-18 1978-05-18 Voltage converter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5961178A JPS54150955A (en) 1978-05-18 1978-05-18 Voltage converter circuit

Publications (1)

Publication Number Publication Date
JPS54150955A true JPS54150955A (en) 1979-11-27

Family

ID=13118209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5961178A Pending JPS54150955A (en) 1978-05-18 1978-05-18 Voltage converter circuit

Country Status (1)

Country Link
JP (1) JPS54150955A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703199A (en) * 1985-04-03 1987-10-27 Intersil, Inc. Non-restricted level shifter
JPS63149896A (en) * 1986-12-12 1988-06-22 Hitachi Ltd Semiconductor memory device
JPH01112594A (en) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc Nonvolatile shadow memory cell in which number of tunnel elements is reduced to improve reliability
JPH01112595A (en) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc Nonvolatile shadow memory cell in which improved level shifting circuit is provided and number of tunnel elements is reduced to improve reliability

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703199A (en) * 1985-04-03 1987-10-27 Intersil, Inc. Non-restricted level shifter
JPS63149896A (en) * 1986-12-12 1988-06-22 Hitachi Ltd Semiconductor memory device
JPH01112594A (en) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc Nonvolatile shadow memory cell in which number of tunnel elements is reduced to improve reliability
JPH01112595A (en) * 1987-08-03 1989-05-01 Sgs Thomson Microelectron Inc Nonvolatile shadow memory cell in which improved level shifting circuit is provided and number of tunnel elements is reduced to improve reliability

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