DE3883929D1 - Nichtflüchtiger Speicher. - Google Patents

Nichtflüchtiger Speicher.

Info

Publication number: DE3883929D1
Authority: DE; Germany
Prior art keywords: volatile memory; volatile; memory
Prior art date: 1987-11-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE88119501T

Other languages

English (en)

Other versions

DE3883929T2 (de

Inventor

Akihiro C O Patent Di Yamazaki

Katsuya Kiyohara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Toshiba Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-11-24

Filing date

1988-11-23

Publication date

1993-10-14

1988-11-23 Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp

1993-10-14 Publication of DE3883929D1 publication Critical patent/DE3883929D1/de

1994-01-05 Application granted granted Critical

1994-01-05 Publication of DE3883929T2 publication Critical patent/DE3883929T2/de

2008-11-24 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/70—Arrangements for deflecting ray or beam
- H01J29/72—Arrangements for deflecting ray or beam along one straight line or along two perpendicular straight lines
- H01J29/76—Deflecting by magnetic fields only
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/70—Arrangements for deflecting ray or beam

DE88119501T 1987-11-24 1988-11-23 Nichtflüchtiger Speicher. Expired - Lifetime DE3883929T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP29569587A JPH081759B2 (ja)	1987-11-24	1987-11-24	不揮発性メモリ

Publications (2)

Publication Number	Publication Date
DE3883929D1 true DE3883929D1 (de)	1993-10-14
DE3883929T2 DE3883929T2 (de)	1994-01-05

Family

ID=17823969

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE88119501T Expired - Lifetime DE3883929T2 (de)	1987-11-24	1988-11-23	Nichtflüchtiger Speicher.

Country Status (7)

Country	Link
US (1)	US5016218A (de)
EP (1)	EP0317984B1 (de)
JP (1)	JPH081759B2 (de)
KR (1)	KR910007439B1 (de)
DE (1)	DE3883929T2 (de)
ES (1)	ES2050142T3 (de)
MY (1)	MY103797A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3247402B2 (ja) *	1991-07-25	2002-01-15	株式会社東芝	半導体装置及び不揮発性半導体記憶装置
GB9417264D0 (en) *	1994-08-26	1994-10-19	Inmos Ltd	Memory device
FR2799045B1 (fr) *	1999-09-29	2002-02-08	St Microelectronics Sa	Memoire en circuit integre a acces serie
JP5260180B2 (ja) *	2008-08-20	2013-08-14	ルネサスエレクトロニクス株式会社	半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5775030A (en) *	1980-10-29	1982-05-11	Nippon Shirikonikusu Kk	High-dielectric strength semiconductor switch circuit
JPS58114396A (ja) *	1981-12-26	1983-07-07	Toshiba Corp	不揮発性メモリ−
JPS5952497A (ja) *	1982-09-17	1984-03-27	Nec Corp	デコ−ダ回路
JPS6079598A (ja) *	1983-10-07	1985-05-07	Hitachi Ltd	半導体記憶装置
JPS59185092A (ja) *	1984-02-29	1984-10-20	Toshiba Corp	電圧切換回路
JPH0746515B2 (ja) *	1984-12-28	1995-05-17	日本電気株式会社	デコ−ダ回路
JPS61172496A (ja) *	1985-01-28	1986-08-04	Toshiba Corp	フイ−ルドメモリ装置
JP2504743B2 (ja) *	1985-03-18	1996-06-05	日本電気株式会社	半導体記憶装置
JP2519885B2 (ja) *	1985-04-09	1996-07-31	セイコーエプソン株式会社	Ｃ・ｍｏｓ型電流増幅回路
JPH0770230B2 (ja) *	1985-04-18	1995-07-31	日本電気株式会社	半導体メモリ
KR940011426B1 (ko) *	1985-07-26	1994-12-15	가부시기가이샤 히다찌세이사꾸쇼	반도체 기억 장치
JPS6231094A (ja) *	1985-08-01	1987-02-10	Toshiba Corp	不揮発性半導体記憶装置
JPS6252797A (ja) *	1985-08-30	1987-03-07	Mitsubishi Electric Corp	半導体記憶装置
US4668287A (en) *	1985-09-26	1987-05-26	Westinghouse Electric Corp.	Process for producing high purity zirconium and hafnium
JPS62116095A (ja) *	1985-11-15	1987-05-27	Matsushita Electric Ind Co Ltd	色信号記録再生方法

1987
- 1987-11-24 JP JP29569587A patent/JPH081759B2/ja not_active Expired - Fee Related
1988
- 1988-11-21 US US07/273,535 patent/US5016218A/en not_active Expired - Lifetime
- 1988-11-21 MY MYPI88001324A patent/MY103797A/en unknown
- 1988-11-23 DE DE88119501T patent/DE3883929T2/de not_active Expired - Lifetime
- 1988-11-23 EP EP88119501A patent/EP0317984B1/de not_active Expired - Lifetime
- 1988-11-23 ES ES88119501T patent/ES2050142T3/es not_active Expired - Lifetime
- 1988-11-24 KR KR1019880015481A patent/KR910007439B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
MY103797A (en)	1993-09-30
EP0317984A3 (de)	1991-01-09
JPH01137499A (ja)	1989-05-30
US5016218A (en)	1991-05-14
JPH081759B2 (ja)	1996-01-10
ES2050142T3 (es)	1994-05-16
DE3883929T2 (de)	1994-01-05
KR890008847A (ko)	1989-07-12
EP0317984A2 (de)	1989-05-31
KR910007439B1 (ko)	1991-09-26
EP0317984B1 (de)	1993-09-08

Publication	Publication Date	Title
DE3852833D1 (de)	1995-03-09	Nichtflüchtiger Speicher.
DE3850943D1 (de)	1994-09-08	Löschbaren programmierbarer Speicher.
DE3885408D1 (de)	1993-12-09	Nichtflüchtige Speicherzelle.
DE3778065D1 (de)	1992-05-14	Magnetischer speicher.
DE3684359D1 (de)	1992-04-23	Nichtfluechtiger elektrisch aenderbarer speicher.
DE3782854D1 (de)	1993-01-14	Blockmaessig elektrisch loeschbarer speicher.
DE68917792D1 (de)	1994-10-06	Speicher.
DE3580429D1 (de)	1990-12-13	Optischer speicher.
DE69002182D1 (de)	1993-08-19	Speicher.
DE3889390D1 (de)	1994-06-09	Schreibe-Schutzmechanismus für nichtflüchtigen Speicher.
DE3874455D1 (de)	1992-10-15	Nichtfluechtiger halbleiterspeicher.
DE3576013D1 (de)	1990-03-15	Nichtfluechtiger halbleiterspeicher.
DE3886668D1 (de)	1994-02-10	Löschbares programmierbares Festwertspeichergerät.
DE3785509D1 (de)	1993-05-27	Nichtfluechtige halbleiterspeicheranordnung.
DE3786819D1 (de)	1993-09-09	Nichtfluechtige halbleiterspeicheranordnung.
DE3382671D1 (de)	1993-05-06	Magneto-optischer speicher.
DE68923942D1 (de)	1995-09-28	Nichtflüchtiges Halbleiterspeichersystem.
DE3869158D1 (de)	1992-04-23	Speicher-leseschaltung.
DE3878370D1 (de)	1993-03-25	Nichtfluechtige halbleiterspeicheranordnung.
DE3481350D1 (de)	1990-03-15	Rekonfigurierbarer speicher.
DE3852131D1 (de)	1994-12-22	Speicherkarte.
DE3887823D1 (de)	1994-03-24	Halbleiterspeicher.
DE69021175D1 (de)	1995-08-31	Optischer speicher.
DE3686144D1 (de)	1992-08-27	Nichtfluechtiger halbleiterspeicher.
DE3853038D1 (de)	1995-03-23	Nichtflüchtige Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1994-03-24	8327	Change in the person/name/address of the patent owner	Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T
1994-10-06	8364	No opposition during term of opposition