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DE10331335C5 - Leistungs-Halbleitervorrichtung - Google Patents

Leistungs-Halbleitervorrichtung Download PDF

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Publication number
DE10331335C5
DE10331335C5 DE2003131335 DE10331335A DE10331335C5 DE 10331335 C5 DE10331335 C5 DE 10331335C5 DE 2003131335 DE2003131335 DE 2003131335 DE 10331335 A DE10331335 A DE 10331335A DE 10331335 C5 DE10331335 C5 DE 10331335C5
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DE
Germany
Prior art keywords
main surface
heat spreader
heat
power semiconductor
resin housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2003131335
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German (de)
English (en)
Other versions
DE10331335B4 (de
DE10331335A1 (de
Inventor
Dai Nakajima
Taishi Sasaki
Toru Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10331335A1 publication Critical patent/DE10331335A1/de
Publication of DE10331335B4 publication Critical patent/DE10331335B4/de
Application granted granted Critical
Publication of DE10331335C5 publication Critical patent/DE10331335C5/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/491—Disposition
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE2003131335 2002-11-13 2003-07-10 Leistungs-Halbleitervorrichtung Expired - Lifetime DE10331335C5 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-329243 2002-11-13
JP2002329243A JP3740117B2 (ja) 2002-11-13 2002-11-13 電力用半導体装置

Publications (3)

Publication Number Publication Date
DE10331335A1 DE10331335A1 (de) 2004-06-09
DE10331335B4 DE10331335B4 (de) 2008-10-16
DE10331335C5 true DE10331335C5 (de) 2014-11-20

Family

ID=32212020

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2003131335 Expired - Lifetime DE10331335C5 (de) 2002-11-13 2003-07-10 Leistungs-Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US6903457B2 (ja)
JP (1) JP3740117B2 (ja)
KR (1) KR100709278B1 (ja)
CN (1) CN1284233C (ja)
DE (1) DE10331335C5 (ja)

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DE102006013017B4 (de) * 2006-03-20 2014-11-06 R. Stahl Schaltgeräte GmbH Gehäuse mit Wärmebrücke
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JP5288161B2 (ja) 2008-02-14 2013-09-11 東芝ライテック株式会社 発光モジュール及び照明装置
US7821141B2 (en) * 2008-02-22 2010-10-26 Infineon Technologies Ag Semiconductor device
US7919854B2 (en) * 2008-08-15 2011-04-05 Infineon Technologies Ag Semiconductor module with two cooling surfaces and method
DE102009002993B4 (de) * 2009-05-11 2012-10-04 Infineon Technologies Ag Leistungshalbleitermodul mit beabstandeten Schaltungsträgern
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JP5380376B2 (ja) 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
JP5569400B2 (ja) * 2011-01-07 2014-08-13 株式会社デンソー 半導体モジュール
US8878483B2 (en) 2011-01-14 2014-11-04 Lear Corporation Electronics unit with current sensing
CN102306637A (zh) * 2011-08-31 2012-01-04 昆山锦泰电子器材有限公司 带有三极管的组装散热片
JP5843539B2 (ja) * 2011-09-16 2016-01-13 三菱電機株式会社 半導体装置及び当該半導体装置の製造方法
US8970020B2 (en) 2011-09-30 2015-03-03 Rohm Co., Ltd. Semiconductor device
JP5988882B2 (ja) * 2013-01-17 2016-09-07 三菱電機株式会社 半導体装置
JP6065978B2 (ja) * 2013-07-04 2017-01-25 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP5700092B2 (ja) 2013-09-06 2015-04-15 トヨタ自動車株式会社 半導体装置
JP2016012709A (ja) * 2014-06-30 2016-01-21 サンケン電気株式会社 半導体装置
JP6327140B2 (ja) * 2014-12-15 2018-05-23 株式会社デンソー 電子装置
JP6365322B2 (ja) * 2015-01-23 2018-08-01 三菱電機株式会社 半導体装置
DE102015112450B3 (de) * 2015-07-30 2016-12-29 Danfoss Silicon Power Gmbh Leistungshalbleiterbaugruppe und Verfahren zum Herstellen eines Leistungsmoduls und der Leistungshalbleiterbaugruppe
CN108886036B (zh) * 2016-04-04 2022-06-24 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
JP2017224788A (ja) * 2016-06-17 2017-12-21 ミヨシ電子株式会社 電子回路装置
WO2019011890A1 (en) 2017-07-12 2019-01-17 Abb Schweiz Ag POWER SEMICONDUCTOR MODULE
EP3444839A1 (en) * 2017-08-18 2019-02-20 Infineon Technologies Austria AG Assembly and method for mounting an electronic component to a substrate
EP3682475A1 (en) 2017-09-15 2020-07-22 Finar Module Sagl Packaging method and joint technology for an electronic device
DE102018217456B4 (de) * 2018-10-11 2020-07-09 Conti Temic Microelectronic Gmbh Elektronische Steuervorrichtung und Verfahren zur Herstellung einer elektronischen Steuervorrichtung
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DE102019111367A1 (de) * 2019-05-02 2020-11-05 Danfoss Silicon Power Gmbh Leistungselektronik-Modul mit verbesserter Kühlung
DE102019111366B3 (de) 2019-05-02 2020-05-14 Fachhochschule Kiel Kompaktes Leistungselektronik-Modul mit vergrößerter Kühlfläche
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CN112864113A (zh) * 2021-02-10 2021-05-28 华为技术有限公司 功率器件、功率器件组件与相关装置

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US20040089931A1 (en) 2004-05-13
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JP2004165406A (ja) 2004-06-10
JP3740117B2 (ja) 2006-02-01
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CN1501484A (zh) 2004-06-02
KR100709278B1 (ko) 2007-04-19
US6903457B2 (en) 2005-06-07

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