CN2656432Y - Rotary type magnetic controlled sputtering target - Google Patents
Rotary type magnetic controlled sputtering target Download PDFInfo
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- CN2656432Y CN2656432Y CN 03274500 CN03274500U CN2656432Y CN 2656432 Y CN2656432 Y CN 2656432Y CN 03274500 CN03274500 CN 03274500 CN 03274500 U CN03274500 U CN 03274500U CN 2656432 Y CN2656432 Y CN 2656432Y
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- sputtering target
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Abstract
The utility model provides a rotary type magnetic controlled sputtering target used for large-area film deposition, which comprises a permanent magnet 1, a target 4 and a rotary mechanism 12, wherein the rotary mechanism 12 drives the target 4 to rotate around the permanent magnet 1, the utilization rate of the target is increased, arcs on the surface of the target are avoided, and the stability of sputtering process and the quality of a deposited film are ensured. Simultaneously, a twin rotary double-cylinder type magnetic controlled sputtering target is utilized, a deposited compound film uses the form of intermediate-frequency electric discharge, the stability of sputtering process is enhanced, and the quality of the deposited film is raised.
Description
Technical field
The utility model relates to a kind of large-area vacuum plated film medium frequency magnetron sputtering target, can be widely used in the industries such as photoelectron, the energy, communication, building materials and machinery.
Background technology
Magnetron sputtering target is one of main device in the large-area vacuum filming equipment, needs insulating compound films such as a large amount of deposition oxides, nitride in the modern optical conductive film product, so widespread use intermediate frequency reaction magnetocontrol sputtering technology; What use in the vacuum coating film equipment now mainly is plane magnetic controlled sputtering target, and its permanent magnet and target all are actionless, and the etched area of target is a fixed like this; Therefore have following shortcoming during plane magnetic controlled sputtering target deposition of insulative material film: 1, because the etched area of target is a fixed, the utilization ratio of target is very low, can only reach 40% at most usually; 2, along with the etching of target is more and more darker, the sputter rate of target and the homogeneity of film are all influential, are unfavorable for the deposition of high quality function film; 3, because the existence of the non-etched area of target, insulating material can be deposited on non-etched area surface in coating process, causes a large amount of electronics in last accumulation, thereby causes the target surface starting the arc; Target surface starting the arc the lighter causes the pollution of deposit film, and weight person will cause the unstable of sputter procedure even stop.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, proposes a kind of sedimentary rotary magnetic control sputtering target of large area film that is used for, and improves the utilization ratio of target, avoids the phenomenon of the target surface starting the arc, guarantees the stability of sputter procedure and the quality of deposit film.
For achieving the above object, the utility model proposes technical scheme and be: rotary magnetic control sputtering target, comprise permanent magnet 1, target 4 and rotating mechanism 12, the described target 4 of described rotating mechanism 12 transmissions is around permanent magnet 1 rotation.
Further, described target 4 is the cylindric target of hollow, is fixed with shielding case 5 in the periphery of described column target 4, and described shielding case 5 has the sputter mouth at permanent magnet 1 towards the one side of base material.
Preferably, described permanent magnet 1, target 4 and rotating mechanism 12 all are Controlled twin type.
The beneficial effects of the utility model are: because permanent magnet is fixed in the sputter procedure, and target rotates all the time, so the etching of target is even and etched area is fixed never, can increase substantially the utilization ratio of target like this, reaches more than the 70-80%; Same because whole target surface all is etched, the problem of the non-etched area electronics accumulation of planar target can not occur, thereby avoid the phenomenon of the target surface starting the arc, guarantee the stability of sputter procedure and the quality of deposit film.Because permanent magnet, target and rotating mechanism all are Controlled twin type, the deposited compound film is adopted the intermediate frequency discharge type, increased the homogeneity of deposit film.
Feature of the present utility model and advantage will be elaborated in conjunction with the accompanying drawings by embodiment.
Description of drawings
Fig. 1 represents the cross-sectional view of target of the present utility model.
Fig. 2 represents the structure iron of specific embodiment of the utility model.
Embodiment
As most preferred embodiment, permanent magnet 1, target 4 and rotating mechanism 12 all adopt Controlled twin type, and target 4 adopts the hollow cylindrical target.The cross-sectional view of target of the present utility model as shown in Figure 1, permanent magnet 1 is fixed on the monoblock type pole shoe 2, target 4 is fixed on the target post 3, and in permanent magnet 1 and pole shoe 2 rings are trapped among, the periphery of target 4 has shielding case 5, shielding case 5 has the sputter mouth at permanent magnet 1 towards the one side of base material 10, the sputter mouth of two sputtering targets is symmetrical, shielding case 5 is used for shielding discharge 7, only make towards the target 4 of base material 6 and under the effect in magnetic field 7, just produce sputter, be splashed on the base material 6 from the sputter mouth, avoid invalid sputter, improve the utilization ratio of target.
Be illustrated in figure 2 as a kind of embodiment of the present utility model: permanent magnet 1, target 4, pole shoe 2, target post 3 and shielding case 5 are as shown in Figure 1, target 4 is fixed on the target post 3, rotating mechanism 12 is arranged on the top of target 4, target post 3 tops and rotating mechanism 12 are by being rigidly connected, the below is tightly connected with base 19, rotating mechanism 12 is by swivel arrangement 10 driven rotary, and transmission target post 3 and target 4 rotate around the axle center again.Because sputtering chamber is a vacuum state, must be isolated from the outside, Gu in the periphery of rotating mechanism 12 dynamic sealing device 11 is set, dynamic sealing device 11 upper ends and rotating mechanism 12 movable sealings, the top 14 of lower end and vacuum sputtering chamber is rigidly connected.Because in the sputtering target rotary course, can produce a large amount of heats, for heat is taken away, the utility model also comprises refrigerating unit, described refrigerating unit comprises cooling water inlet pipe road 8 and cooling water outlet pipe road 9, described cooling water inlet pipe road 8 passes from the center of rotating mechanism 12 and pole shoe 2, water-in is located at the upper port of inlet channel 8, water outlet 16 is positioned at the lower end of inlet channel 8 near base 19 places, described cooling water outlet pipe road 9 is near the inwall of target post 3 and rotating mechanism 12, and the water outlet in cooling water outlet pipe road 9 is positioned at the upper port of rotating mechanism 12.Rotary magnetic control sputtering target also comprises two groups of rolling bearings 20, one group of described rolling bearing 20 between base 19 and base plate 13, another group is between rotating mechanism 12 and pole shoe 2, stability when rotating to strengthen target, also has one group of rolling bearing 17 in addition, between pole shoe 2 and base 19, the relative movement between pole shoe 2 and target stand.
Because structure of the present utility model adopts magnet steel to fix, the mode of target rotation greatly improves target Utilization rate is up to more than 70%; Use the two target discharge types of intermediate frequency, target in the time of can overcoming the deposited compound film Face is poisoned and starting the arc phenomenon. Film deposition rate height, good uniformity, function admirable. Be applicable to large tracts of land The industrial-scale production of the film such as oxide, nitride.
Claims (10)
1. a rotary magnetic control sputtering target comprises permanent magnet (1), target (4), it is characterized in that: also comprise rotating mechanism (12), the described target of described rotating mechanism (12) transmission (4) rotates around permanent magnet (1).
2. rotary magnetic control sputtering target as claimed in claim 1 is characterized in that: described target (4) is the cylindric target of hollow.
3. rotary magnetic control sputtering target as claimed in claim 1 is characterized in that: the periphery at described target (4) is fixed with shielding case (5), and described shielding case (5) has the sputter mouth at permanent magnet (1) towards the one side of base material.
4. as any described rotary magnetic control sputtering target in the claim 1,2 or 3, it is characterized in that: described permanent magnet (1), target (4) and rotating mechanism (12) all are Controlled twin type.
5. as any described rotary magnetic control sputtering target in the claim 1,2 or 3, it is characterized in that: also comprise dynamic sealing device (11), described dynamic sealing device (11) upper end and rotating mechanism (12) movable sealing, the top (14) of lower end and vacuum sputtering chamber is rigidly connected.
6. rotary magnetic control sputtering target as claimed in claim 4 is characterized in that: also comprise dynamic sealing device (11), and described dynamic sealing device (11) upper end and rotating mechanism (12) movable sealing, the top (14) of lower end and vacuum sputtering chamber is rigidly connected.
7. rotary magnetic control sputtering target as claimed in claim 5, it is characterized in that: also comprise refrigerating unit, described refrigerating unit comprises cooling water inlet pipe road (8) and cooling water outlet pipe road (9), described cooling water inlet pipe road (8) passes from target center, water-in is located at the upper port of inlet channel (8), water outlet (16) is positioned at the lower end of inlet channel (8), described cooling water outlet pipe road (9) is near the inwall of target (4) and rotating mechanism (12), and water outlet is located at the upper end of rotating mechanism (12).
8. rotary magnetic control sputtering target as claimed in claim 6, it is characterized in that: also comprise refrigerating unit, described refrigerating unit comprises cooling water inlet pipe road (8) and cooling water outlet pipe road (9), described cooling water inlet pipe road (8) passes from target center, water-in is located at the upper port of inlet channel (8), water outlet (16) is positioned at the lower end of inlet channel (8), described cooling water outlet pipe road (9) is near the inwall of target (4) and rotating mechanism (12), and water outlet is located at the upper end of rotating mechanism (12).
9. rotary magnetic control sputtering target as claimed in claim 4, it is characterized in that: also comprise pole shoe (2) and target post (3), described permanent magnet (1) is fixed on the pole shoe (2), described target (4) is fixed on the target post (3), described target post (3) top is rigidly connected with rotating mechanism (12), and below and base (19) are tightly connected.
10. rotary magnetic control sputtering target as claimed in claim 9, it is characterized in that: also comprise two groups of rolling bearings (20), described rolling bearing is positioned between base (19) and the base plate (13) for (20) one groups, and another group is positioned between rotating mechanism (12) and the pole shoe (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03274500 CN2656432Y (en) | 2003-09-11 | 2003-09-11 | Rotary type magnetic controlled sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03274500 CN2656432Y (en) | 2003-09-11 | 2003-09-11 | Rotary type magnetic controlled sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2656432Y true CN2656432Y (en) | 2004-11-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03274500 Expired - Lifetime CN2656432Y (en) | 2003-09-11 | 2003-09-11 | Rotary type magnetic controlled sputtering target |
Country Status (1)
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| CN (1) | CN2656432Y (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100392147C (en) * | 2005-07-26 | 2008-06-04 | 武汉大学 | A pair of target twin magnetron sputtering ion plating deposition device |
| CN101130452B (en) * | 2006-08-25 | 2011-05-11 | 深圳豪威真空光电子股份有限公司 | Star type double-turn magnetron sputtering conducting glass plated film product line and processing technique thereof |
| CN101956169B (en) * | 2009-07-20 | 2012-02-01 | 北儒精密股份有限公司 | Rotary target device for vacuum sputtering equipment |
| CN102586750A (en) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | Planar moving target mechanism |
| CN103409725A (en) * | 2013-05-22 | 2013-11-27 | 东莞宏威数码机械有限公司 | Rotating special-shaped target cathode mechanism and magnetron sputtering coating device |
| CN104342622A (en) * | 2013-07-24 | 2015-02-11 | 三星显示有限公司 | Sputtering device |
| CN104766779A (en) * | 2009-10-02 | 2015-07-08 | 应用材料公司 | Method for coating substrate and coater |
| CN110220048A (en) * | 2019-04-18 | 2019-09-10 | 厦门阿匹斯智能制造系统有限公司 | A kind of adjustable magnet steel of magnetic field angle |
| CN110453188A (en) * | 2019-08-30 | 2019-11-15 | 深圳市金耀玻璃机械有限公司 | A magnetic steel swing type end assembly built in a vacuum chamber |
| CN110735122A (en) * | 2018-07-02 | 2020-01-31 | 佳能株式会社 | Film forming apparatus and film forming method using the same |
| CN114481072A (en) * | 2022-02-16 | 2022-05-13 | 青岛科技大学 | A rotary intermediate preheating magnetron sputtering target device |
| CN116200713A (en) * | 2023-05-05 | 2023-06-02 | 汕头超声显示器技术有限公司 | Target structure and sputtering coating machine |
-
2003
- 2003-09-11 CN CN 03274500 patent/CN2656432Y/en not_active Expired - Lifetime
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100392147C (en) * | 2005-07-26 | 2008-06-04 | 武汉大学 | A pair of target twin magnetron sputtering ion plating deposition device |
| CN101130452B (en) * | 2006-08-25 | 2011-05-11 | 深圳豪威真空光电子股份有限公司 | Star type double-turn magnetron sputtering conducting glass plated film product line and processing technique thereof |
| CN101956169B (en) * | 2009-07-20 | 2012-02-01 | 北儒精密股份有限公司 | Rotary target device for vacuum sputtering equipment |
| CN104766779A (en) * | 2009-10-02 | 2015-07-08 | 应用材料公司 | Method for coating substrate and coater |
| CN104766779B (en) * | 2009-10-02 | 2017-07-25 | 应用材料公司 | Method and applicator for coated substrate |
| CN102586750A (en) * | 2012-03-14 | 2012-07-18 | 无锡康力电子有限公司 | Planar moving target mechanism |
| CN103409725A (en) * | 2013-05-22 | 2013-11-27 | 东莞宏威数码机械有限公司 | Rotating special-shaped target cathode mechanism and magnetron sputtering coating device |
| CN104342622A (en) * | 2013-07-24 | 2015-02-11 | 三星显示有限公司 | Sputtering device |
| US11414746B2 (en) | 2018-07-02 | 2022-08-16 | Canon Kabushiki Kaisha | Film forming apparatus and film forming method using the same |
| CN110735122A (en) * | 2018-07-02 | 2020-01-31 | 佳能株式会社 | Film forming apparatus and film forming method using the same |
| CN110735122B (en) * | 2018-07-02 | 2023-04-07 | 佳能株式会社 | Film forming apparatus and film forming method using the same |
| CN110220048A (en) * | 2019-04-18 | 2019-09-10 | 厦门阿匹斯智能制造系统有限公司 | A kind of adjustable magnet steel of magnetic field angle |
| CN110453188A (en) * | 2019-08-30 | 2019-11-15 | 深圳市金耀玻璃机械有限公司 | A magnetic steel swing type end assembly built in a vacuum chamber |
| CN114481072A (en) * | 2022-02-16 | 2022-05-13 | 青岛科技大学 | A rotary intermediate preheating magnetron sputtering target device |
| CN114481072B (en) * | 2022-02-16 | 2023-10-13 | 青岛科技大学 | A rotating intermediate preheating magnetron sputtering target device |
| CN116200713A (en) * | 2023-05-05 | 2023-06-02 | 汕头超声显示器技术有限公司 | Target structure and sputtering coating machine |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20130911 Granted publication date: 20041117 |