CN101285172A - Rotary magnetron sputtering target - Google Patents
Rotary magnetron sputtering target Download PDFInfo
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- CN101285172A CN101285172A CNA2007100222774A CN200710022277A CN101285172A CN 101285172 A CN101285172 A CN 101285172A CN A2007100222774 A CNA2007100222774 A CN A2007100222774A CN 200710022277 A CN200710022277 A CN 200710022277A CN 101285172 A CN101285172 A CN 101285172A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- 230000010287 polarization Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000005477 sputtering target Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000013077 target material Substances 0.000 abstract 4
- 238000001556 precipitation Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a rotary magnetic control sputtering target, which comprises a pole terminal, permanent magnets and cylindrical target material, wherein, tree rows of permanent magnets are uniformly arranged in the pole terminal along the circumferential direction towards one side of a matrix within the range of 120 DEG; the permanent magnets comprise long permanent magnetic strips and short permanent magnetic strips; the short permanent magnetic strips are arranged in the middle position of the pole terminal; a long permanent magnetic strip is respectively arranged on both sides of the pole terminal; a shielding case is arranged on the circumference of the cylindrical target material and provided with sputtering openings on one sides of the permanent magnets facing to the matrix; the polarity of the long permanent magnetic strips and that of the short permanent magnetic strips are different; the polarization direction is perpendicular to a central axis of a sputtering cathode; and a closed racetrack shaped magnetic force line is formed by magnetic rings on both ends of the pole terminal and the long permanent magnetic strips and the short permanent magnetic strips. When the rotary magnetic control sputtering target is operated, the cylindrical target material is rotated at a constant speed and the surface etching of the target is uniform, thereby the consumption of the target material is uniform and the service life is long; the shielding case can effectively reduce sputtering precipitation of sputtering particles towards an anode and the wall of a vacuum cavity and satisfactorily guarantee stability of the sputtering process and the quality of a deposition film; the application prospect of the target is good.
Description
Technical field
The present invention relates to a kind of plated film rotary cylindrical magnetron sputtering target, belong to the film preparing technology field.
Background technology
Magnetron sputtering target is one of main device in the vacuum coating film equipment, needs insulating compound films such as a large amount of deposition oxides, nitride in the modern optical conductive film product, so widespread use intermediate frequency reaction magnetocontrol sputtering technology; What use in the vacuum coating film equipment now mainly is plane magnetic controlled sputtering target, and its permanent magnet and target all are transfixions, and the etched area of target is a fixed like this; Therefore during plane magnetic controlled sputtering target deposition of insulative material film, the utilization ratio of target is very low, can only reach 40% at most usually; Along with the etching of target is more and more darker, the sputter rate of target and the homogeneity of film are all influential, are unfavorable for the deposition of high quality function film; Because the existence of the non-etched area of target, insulating material can be deposited on non-etched area surface in coating process, causes a large amount of electronics in last accumulation, thereby causes the target surface starting the arc; Target surface starting the arc the lighter causes the pollution of deposit film, and weight person will cause the unstable of sputter procedure even stop.
U.S. Pat 2005/0189218A1 discloses a kind of rotational circle column type target structure, uses the cathode arc power supply to deposit.Sputtering technology can satisfy the needs of preparation different performance coating, the basis of sputter procedure is working gas (being generally argon gas) glow discharge, between the anode of cathode targets that applies high negative voltage and ground connection, there is an electric field, near the negative electrode unbound electron under electric field action towards anode accelerated motion, under certain argon gas density, the neutral argon gas atmo of ionization becomes the argon gas ion of positively charged, discharge secondary electron simultaneously, the argon gas ion of positively charged is under electric field action, towards the negative electrode accelerated motion that applies high negative voltage, when the argon gas ion energy is higher than the cathode targets atomic binding energy, target atom is bombarded, move on the workpiece to be plated that is placed on target opposite or circumference and form film, this calls sputter coating.
What need emphasize is, though sputter material can deposit on the matrix in the sputter procedure,, unavoidable meeting is splashed on every side on the vacuum cavity, causes a lot of problems, especially when the deposition medium material, for example, silicon target sputter under oxygen reaction atmosphere, SiO
2Except being deposited on the matrix, also can be deposited on cathode surface, anode surface and vacuum cavity internal surface etc.Be deposited on the dielectric film on the anode, its accumulation finally can be cut off the loop of geseous discharge, is referred to as " anode disappearance effect "; This not only can have influence on the electromotive force in the geseous discharge, also can influence the performance of sputtering technology self and deposit film.Be deposited on the dielectric film of vacuum chamber internal surface, its accumulation can be accumulated incident positive ion electric charge, acquires a certain degree to produce spark, will produce impurity particle, and influence deposits to the quality of the film on the matrix; In addition, spark discharge also can make shielding power supply moment overload, causes the shielding power supply instability.
Owing to there is above defective, development, a kind of novel rotary magnetron sputtering target of exploitation are stablized sputter and are carried out, and improve the quality of deposit film, reach the economic benefit that develops skill, and have been the task of top priority.
Summary of the invention
The invention provides a kind of novel rotary magnetron sputtering target, purpose is to overcome the deficiencies in the prior art, can guarantee the quality of the stable and deposit film of sputter procedure preferably.
Purpose of the present invention is achieved through the following technical solutions:
A kind of rotary magnetron sputtering target, comprise pole shoe, permanent magnet and hollow circuit cylinder target, permanent magnet axially is embedded in the pole shoe along the hollow circuit cylinder target, it is characterized in that: described pole shoe along the circumferential direction evenly is being provided with three row's permanent magnets in 120 ° of scopes of matrix one side, described permanent magnet comprises long permanent magnetic strip and short permanent magnetic strip, the short permanent magnetic strip of location arrangements in the middle of it, two side positions respectively are a long permanent magnetic strip, the periphery of described hollow circuit cylinder target is equipped with shielding case, and described shielding case has the sputter mouth at permanent magnet towards the one side of matrix; The polarity of described length magnetic stripe is opposite, and direction of polarization is perpendicular to the sputter cathode central axis, and the magnet ring at pole shoe two ends and length permanent magnetic strip constitute closed runway shape magnetic line of force; During the work discharge, the runway shape discharge track vertically that constitutes a sealing in 120 ° of scopes of matrix one side carries out plated film to matrix, and a side of matrix does not have magnetic field control dorsad.
Further, above-mentioned a kind of rotary magnetron sputtering target, wherein, described long permanent magnetic strip and short permanent magnetic strip are fixed on the pole shoe by long press strip and short press strip respectively.
Further, above-mentioned a kind of rotary magnetron sputtering target, wherein, the center line of described short permanent magnetic strip is right against matrix surface.
The outstanding substantive distinguishing features and the obvious improvement of technical solution of the present invention is mainly reflected in:
Cylindric target at the uniform velocity rotated when rotary magnetron sputtering target of the present invention was worked, the target surface etch is even, therefore the consumption of target is even, long service life, target utilization surpasses 70%, shielding case can reduce the sputter deposition may of sputtering particle anode and chamber walls effectively, guarantees the quality of the stable and deposit film of sputter procedure.Can realize subatmosphericization, densification and the homogenizing of discharge plasma, adopt the coating of rotary cylindrical magnetron sputtering technology preparation, film surface quality height, the rete densification, economic benefit and obvious social benefit have higher using value.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: structural representation with side direction post target of shielding case;
Fig. 2: cross sectional representation with side direction post target of shielding case;
Fig. 3: side direction post target sectional view vertically with shielding case.
The implication of each Reference numeral sees the following form among the figure:
| Reference numeral | Implication | Reference numeral | Implication | | Implication | |
| 1 | The |
2 | |
3 | Long permanent |
|
| 4 | |
5 | Short permanent |
6 | |
|
| 7 | Cylindric target | 8 | The shielding case bearing | 9 | |
|
| 10 | Shielding case |
Embodiment
Magnetron sputtering technique is a kind of of physical vapor deposition, magnetron sputtering plating (power line is perpendicular to target surface) except an electric field that applies on target also applies a magnetic field makes electronics be subjected to the influence of Lorentz force, make cycloid and spiral helicine compound motion, prolong the electronics running orbit, plasma density is improved greatly, the quantity of positive ion also increases greatly, can improve sputter rate.Compare its film surface quality height, rete densification with other coating techniques; Rete and matrix bond are good; Coating can be prepared at low temperatures, substrate performance can be do not reduced; Green cleaning, non-pollution discharge, the feature of environmental protection is good.
Shown in Fig. 1～3, rotary cylindrical magnetron sputtering target with shielding case comprises pole shoe 2, permanent magnet 3 and 5, press strip 4 and 6, hollow circuit cylinder target 7 and rotation mandrel 1, cylindric target rotation is adopted in this design, magnetic circuit system and water-cooling system immobilized mode of operation, cylindricality pole shoe 2 in the cylindric target is along the circumferential direction evenly being arranged three row's permanent magnets in matrix one side hexagonal angle, the middle weak point permanent magnetic strip 5 of placing, group leader's permanent magnetic strip 3 is respectively placed in both sides, long permanent magnetic strip 3 is fixed on the pole shoe 2 by long press strip 4, and short permanent magnetic strip 5 is fixed on the pole shoe 2 by short press strip 6.The outside of column target 7 is fixed with shielding case 10, shielding case 10 has the sputter mouth at permanent magnet towards the one side of matrix, and the center line of short magnetic stripe 5 is over against matrix surface, the opening of shielding case, according to the Distribution of Magnetic Field on cylindric target 7 surfaces, serve as preferred to expose closed runway shape magnetic line of force just; Rotary magnetic control sputtering target also comprises shielding case bearing 8, the stability when rotating to strengthen target.Target is except being hollow cylindrical, and its cross section can also be shapes such as fan-shaped, arc, regular polygon.The polarity of length magnetic stripe is opposite, and direction of polarization is perpendicular to the sputter cathode central axis; The magnet ring 9 that magneticsubstance is made is installed in the two ends of pole shoe, constitutes a closed runway shape magnetic line of force with the length magnetic stripe.During discharge, the runway shape discharge track vertically that constitutes a sealing in the hexagonal angle of matrix one side carries out plated film to matrix, and a side of matrix has effectively been saved target because the control of no magnetic field does not play aura dorsad.
The cross-sectional view of target of the present invention shown in Figure 2, target 7 adopts the hollow cylindrical target, permanent magnet 3,5 is fixed on the monoblock type pole shoe 2, in target 7 was trapped among permanent magnet 3,5 and pole shoe 2 rings, the periphery of target 7 had shielding case 10, and shielding case 10 is used for the shielding discharge, only make towards the target of base material and under the effect in magnetic field, just produce sputter, be splashed on the base material from the sputter mouth, avoid invalid sputter, improve the utilization ratio of target.In sputter procedure, magnetic circuit system and cooling water system remain static all the time, and target is around the central axis uniform rotation of sputter cathode, and target surface evenly passes the plasma body zone.Permanent magnet is fixed in the sputter procedure, and target rotates all the time, so the etching of target is even and etched area is fixed never, can increase substantially the utilization ratio of target like this; Because whole target surface all is etched, avoid the phenomenon of the target surface starting the arc equally, better guarantee the stability of sputter procedure and the quality of deposit film.
During concrete the application, target is installed on the coating equipment and can uses, connect water coolant, connect the magnetically controlled DC sputtering power cathode, back of the body end vacuum tightness is less than 5 * 10
-5During the Torr scope, injecting gas (as argon gas etc.), make the discharge of target build-up of luminance, it is stable to keep aura, and the adjusting process parameter can obtain evenly firm rete.Owing to adopt the length permanent magnetic strip on the structure, formed a closed runway shape magnetic line of force when guaranteeing glow discharge, sputter is stablized carry out, avoided arcing (discharge) problem of end, target is stably worked under high current density.Pole shoe structure assurance of the present invention in addition magnetic field does not have gap and uniform distribution continuously, and sputter is evenly carried out.The employing permanent magnet is fixed, and the mode of target rotation greatly improves target utilization, surpasses more than 70%; Film deposition rate height, performance are good.
Continual, the uniform bar shaped glow discharge zone that magnetron sputtering target of the present invention forms, make the thickness of coating that deposits to by on the plating base material even, because during work is at the uniform velocity to rotate, the target surface etching is even, therefore the consumption of target is even, long service life is compared with the target of other structure, and the life-span improves greatly.Shielding case can reduce the sputter deposition may of sputtering particle anode and chamber walls effectively, guarantees the quality of the stable and deposit film of sputter procedure satisfactorily.Plated film efficient is also high, and the sputtering sedimentation speed of target is fast, can be coated with superhard, anti-corrosion, decorating film on metallic substance and non-metallic material material products, film forming strong adhesion; Be applicable to the commercial scale production of films such as big area oxide compound, nitride.Economic benefit and obvious social benefit, application prospect is fine.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (3)
1. rotary magnetron sputtering target, comprise pole shoe, permanent magnet and cylinder target, permanent magnet axially is embedded in the pole shoe along the cylinder target, it is characterized in that: along the circumferential direction in 120 ° of scopes of matrix one side, three row's permanent magnets are set evenly at pole shoe, described permanent magnet comprises long permanent magnetic strip and short permanent magnetic strip, the short permanent magnetic strip of location arrangements in the middle of it, two side positions respectively are a long permanent magnetic strip, the periphery of described cylinder target is equipped with shielding case, and described shielding case has the sputter mouth at permanent magnet towards the one side of matrix; The polarity of described length magnetic stripe is opposite, and direction of polarization is perpendicular to the sputter cathode central axis, and the magnet ring at pole shoe two ends and length permanent magnetic strip constitute closed runway shape magnetic line of force; During the work discharge, the runway shape discharge track vertically that constitutes a sealing in 120 ° of scopes of matrix one side carries out plated film to matrix, and a side of matrix does not have magnetic field control dorsad.
2. a kind of rotary magnetron sputtering target according to claim 1 is characterized in that: described long permanent magnetic strip and short permanent magnetic strip are fixed on the pole shoe by long press strip and short press strip respectively.
3. a kind of rotary magnetron sputtering target according to claim 1 and 2 is characterized in that: the center line of described short permanent magnetic strip is right against matrix surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100222774A CN101285172A (en) | 2007-05-11 | 2007-05-11 | Rotary magnetron sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100222774A CN101285172A (en) | 2007-05-11 | 2007-05-11 | Rotary magnetron sputtering target |
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| Publication Number | Publication Date |
|---|---|
| CN101285172A true CN101285172A (en) | 2008-10-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100222774A Pending CN101285172A (en) | 2007-05-11 | 2007-05-11 | Rotary magnetron sputtering target |
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| Country | Link |
|---|---|
| CN (1) | CN101285172A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071400A (en) * | 2011-02-11 | 2011-05-25 | 张敬祎 | Metallic target device capable of preventing target poisoning of microwave reaction sputtering platform |
| CN104342622A (en) * | 2013-07-24 | 2015-02-11 | 三星显示有限公司 | Sputtering device |
| CN104342623A (en) * | 2013-07-25 | 2015-02-11 | 三星显示有限公司 | Sputtering device and method for forming thin film thereby |
| CN106222621A (en) * | 2016-08-23 | 2016-12-14 | 电子科技大学 | A kind of magnetic control sputtering device and magnetically controlled sputter method |
| CN106873181A (en) * | 2017-04-21 | 2017-06-20 | 严爱霞 | A kind of medical radiation-ray preventive eyeglass and its manufacture craft |
| CN110777337A (en) * | 2018-07-31 | 2020-02-11 | 佳能特机株式会社 | Film forming apparatus and method for manufacturing electronic device |
| CN111826624A (en) * | 2013-02-08 | 2020-10-27 | 瑞士艾发科技 | HIPIMS sputtering method and HIPIMS sputtering system |
| CN114032516A (en) * | 2021-07-07 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| CN114293163A (en) * | 2021-12-29 | 2022-04-08 | 丹阳市宝来利真空机电有限公司 | Three-runway full-etching plane target |
| CN114892138A (en) * | 2022-04-15 | 2022-08-12 | 上海积塔半导体有限公司 | Magnetron sputtering deposition device and magnetron sputtering deposition method |
-
2007
- 2007-05-11 CN CNA2007100222774A patent/CN101285172A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071400A (en) * | 2011-02-11 | 2011-05-25 | 张敬祎 | Metallic target device capable of preventing target poisoning of microwave reaction sputtering platform |
| CN111826624A (en) * | 2013-02-08 | 2020-10-27 | 瑞士艾发科技 | HIPIMS sputtering method and HIPIMS sputtering system |
| CN104342622A (en) * | 2013-07-24 | 2015-02-11 | 三星显示有限公司 | Sputtering device |
| CN104342623A (en) * | 2013-07-25 | 2015-02-11 | 三星显示有限公司 | Sputtering device and method for forming thin film thereby |
| CN104342623B (en) * | 2013-07-25 | 2018-11-23 | 三星显示有限公司 | Sputtering equipment and the method for forming film with it |
| CN106222621A (en) * | 2016-08-23 | 2016-12-14 | 电子科技大学 | A kind of magnetic control sputtering device and magnetically controlled sputter method |
| CN106873181A (en) * | 2017-04-21 | 2017-06-20 | 严爱霞 | A kind of medical radiation-ray preventive eyeglass and its manufacture craft |
| CN110777337A (en) * | 2018-07-31 | 2020-02-11 | 佳能特机株式会社 | Film forming apparatus and method for manufacturing electronic device |
| CN110777337B (en) * | 2018-07-31 | 2023-05-02 | 佳能特机株式会社 | Film forming apparatus and method for manufacturing electronic device |
| CN114032516A (en) * | 2021-07-07 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| CN114032516B (en) * | 2021-07-07 | 2023-12-22 | 重庆康佳光电科技有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| CN114293163A (en) * | 2021-12-29 | 2022-04-08 | 丹阳市宝来利真空机电有限公司 | Three-runway full-etching plane target |
| CN114892138A (en) * | 2022-04-15 | 2022-08-12 | 上海积塔半导体有限公司 | Magnetron sputtering deposition device and magnetron sputtering deposition method |
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Open date: 20081015 |