CN101418432B - High-capacity planar magnetron sputtering cathode - Google Patents
High-capacity planar magnetron sputtering cathode Download PDFInfo
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- CN101418432B CN101418432B CN2008101433461A CN200810143346A CN101418432B CN 101418432 B CN101418432 B CN 101418432B CN 2008101433461 A CN2008101433461 A CN 2008101433461A CN 200810143346 A CN200810143346 A CN 200810143346A CN 101418432 B CN101418432 B CN 101418432B
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- cooling channel
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- magnetron sputtering
- target
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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Abstract
The invention relates to a high-power planar magnetron sputtering cathode, which belongs to a double silver-layer low emissivity film and mainly solves the technical problems that the magnet of the prior planar magnetron sputtering cathode is steeped in water and will be degaussed after being used for a long time and the like. The key points of the technical proposal are as follows: the high-power planar magnetron sputtering cathode consists of a cathode body (4), a target (1) and a magnet, wherein the target (1) is arranged on the upper part of the cathode body (4); an airtight cooling channel (2) is arranged in the inner cavity of the cathode (4); a magnetic boot (5) is arranged between the bottom and the cooling channel (2) in the inner cavity of the cathode body (4); and the magnet (3) is arranged between the cooling channel (2) and the magnetic boot (5). Because an independent cooling channel is arranged in the cathode body, the magnet does not contact with cooling media to avoidthe permanent magnet from being eroded by the cooling media; besides, high-power planar magnetron sputtering cathode is designed with a heat conduction plate made of materials with high thermal conductivity to contact with the target in a large area, so that the target can be cooled sufficiently and the cathode can bear higher power. The high-power planar magnetron sputtering cathode can be widely applied to a vacuum magnetron sputtering coating device.
Description
Technical field
The present invention relates to a kind of high-capacity planar magnetron sputtering cathode that is used for the vacuum magnetic-control sputtering filming equipment.
Background technology
At present, the vacuum magnetic-control sputtering method is that substrate to be plated is placed vacuum chamber, and feeding working gas (argon gas, oxygen and nitrogen etc.), when between sputter cathode, anode, switching on, allow the negative electrode be negative potential, because the effect of high-voltage electric field makes gas (argon gas) molecular ionization, form plasma body, the argon particle of positively charged will be under the acceleration of electric field, at a high speed to cathode targets surface bump, the metal ion of target material surface is hit, and the movement locus of ion in crossed electric and magnetic field is cycloid, is deposited on glass surface gradually and forms film.The principle of work of planar magnetic control sputtering cathode is consulted Fig. 2.Its magnet of existing planar magnetic control sputtering cathode is immersed in the water, and having used of a specified duration can demagnetization.
Summary of the invention
But the purpose of this invention is to provide a kind of director simple in structure high-capacity planar magnetron sputtering cathode in work-ing life.
The technical solution adopted for the present invention to solve the technical problems is: it comprises cathode 4, target 1 and magnet, in the inner chamber of cathode 4, magnet is installed, target 1 is installed in the top of cathode 4, the present invention is provided with airtight cooling channel 2 in the inner chamber of cathode 4, in cathode 4 inner chambers, be provided with magnetic boots 5 between its bottom and the cooling channel 2, between cooling channel 2 and magnetic boots 5, be provided with magnet 3.Described cooling channel 2 can be made of cooling channel shell 6 and thermal transfer plate 7, and cooling channel shell 6 is the groove shape structure of open topped, is equipped with thermal transfer plate 7 on cooling channel shell 6 tops.The cross section of described cooling channel shell 6 can be trapezoidal shape cooling tank wide at the top and narrow at the bottom, and 2 arranged outside has the bar magnet 3 that matches with cooling channel shell 6 in the cooling channel.The cross section of described cooling channel shell 6 also can be the trapezoidal shape cooling tank wide at the top and narrow at the bottom more than 2 or 2,2 arranged outside has the bar magnet 3 that matches with cooling channel shell 6 in the cooling channel, and is provided with taper or halfpace shape magnet 8 between 2 trapezoidal shape cooling tanks of cooling channel shell 6.
The invention has the beneficial effects as follows: it is by being provided with an independently cooling channel in cathode inside, thereby magnet is not contacted with cooling media, avoids the permanent magnet media corrosion that is cooled; And have the thermal transfer plate that the high thermal conductivity material makes by design and contact with the target big area, thereby target is cooled off fully, make negative electrode can bear higher power.It can be widely used on the vacuum magnetic-control sputtering filming equipment.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the principle of work reference drawing of planar magnetic control sputtering cathode.
Among the figure: 1-target, 2-cooling channel, 3-magnet, 4-cathode, 5-magnetic boots, 6-cooling channel shell, 7-thermal transfer plate, 8-taper or halfpace shape magnet, 9-substrate.
Embodiment
That the invention will be further described is as follows below in conjunction with embodiment:
Embodiment 1, and main part of the present invention is divided into cathode body part and target part.Form by cathode 4 and magnetic boots 5, magnet 3, cooling channel 2 etc., described cooling channel shell 6 can adopt metallic substance to make, target 1 is installed in the top of cathode 4, in the inner chamber of cathode 4, be provided with airtight cooling channel 2, in cathode 4 inner chambers, be provided with magnetic boots 5 between its bottom and the cooling channel 2, be provided with magnet 3 between cooling channel 2 and magnetic boots 5, thereby be shaped an independently cooling channel in cathode 4 inside, magnet 3 can adopt permanent magnet.This structure can make the present invention that water coolant or other cooling liqs or the gas of big flow can be provided in the course of the work, thereby can guarantee that negative electrode obtains cooling.Magnetic boots 5 and magnet 3 are installed in the bottom of cathode 4, and magnetic boots 5 and magnet 3 can fixedly mount, thereby magnetic boots 5 are not contacted with cooling media with magnet 3, avoid permanent magnet 3 media that is cooled to corrode.Like this, magnet 3 can be used the ferro-aluminum boron material, can reduce the cost of manufacture of negative electrode.Consult Fig. 1 and Fig. 2.
Embodiment 2, cooling channel 2 of the present invention can be made of cooling channel shell 6 and thermal transfer plate 7, thereby make the cathode body part by cathode 4 and magnetic boots 5, magnet 3, cooling channel 2, cooling channel shell 6, thermal transfer plate 7 formations such as grade, cooling channel shell 6 can be designed to the groove shape structure of open topped, and be equipped with thermal transfer plate 7 on cooling channel shell 6 tops, become to be sealed and matched between cooling channel shell 6 tops and the thermal transfer plate 7, thereby make cooling channel shell 6 and thermal transfer plate 7 constitute cooling channel 2 together, described thermal transfer plate 7 employing heat conductivilitys material are preferably made, and its thickness makes less as far as possible, thereby improves heat conduction and heat radiation and cooling efficiency.Be that thin thermal transfer plate 7 contacts with target, improved the cooling efficiency of target.The present invention contacts with target 1 big area by the thermal transfer plate 7 that has the high thermal conductivity material and make, and makes target 1 can access sufficient cooling, thereby can make negative electrode can bear more superpower; They are that negative electrode can carry powerful basic premise.Consult Fig. 1 and Fig. 2, all the other are with embodiment 1.
Embodiment 3, the cross section of cooling channel of the present invention shell 6 can be trapezoidal shape cooling tank wide at the top and narrow at the bottom, 2 arranged outside has the bar magnet 3 that matches with cooling channel shell 6 in the cooling channel, and the present invention passes through design cooling channel 2, thereby can change magnet shape and installation position; The magnet 3 of different sites can require to be designed to different shapes and to install by different angles or position according to working parameter.Consult Fig. 1 and Fig. 2, all the other are with above-mentioned embodiment.
Embodiment 4, the cross section of cooling channel of the present invention shell 6 also can be the trapezoidal shape cooling tank wide at the top and narrow at the bottom more than 2 or 2,2 arranged outside has the bar magnet 3 that matches with cooling channel shell 6 in the cooling channel, and between the trapezoidal shape cooling tank of cooling channel shell 6, be provided with taper or halfpace shape magnet 8, the magnet 3 in the outside can adopt rectangular parallelepiped or bar magnet, and making the magnetizing direction of magnet and target material surface at angle, the big I of angle designs according to the width of target; Be arranged on the intermediary taper or halfpace shape magnet 8 makes its magnetizing direction vertical with target material surface as far as possible.The deflection by making setting angle and the change of magnet shape, thus the homogeneity of target material surface magneticstrength parallel component can be guaranteed, produced the benefit of three aspects thus: the one, make sputtering grooves become smooth, can improve target utilization effectively; The 2nd, dwindled the area of the non-sputtering zone of target, avoid target to poison, reduce and beat arc unusually, the stability of raising sputter procedure; The 3rd, reduced the accumulation of non-conductive, avoid particle to drop in the coated surface of substrate, form the possibility of pinprick, effectively improve the quality of plated film product.Consult Fig. 1 and Fig. 2, all the other are with above-mentioned embodiment.
The present invention is except that target 1, and the rest part of cathode body can be made into an integral body, when need changing target 1, only need unclamp the mounting block of negative electrode and target 1, can take down old target, load onto new target after, fastening mounting block gets final product, and is simple to operate.
Claims (4)
1. high-capacity planar magnetron sputtering cathode, it comprises cathode (4), target (1) and magnet, in the inner chamber of cathode (4), magnet is installed, target (1) is installed in the top of cathode (4), it is characterized in that: in the inner chamber of cathode (4), be provided with airtight cooling channel (2), in cathode (4) inner chamber, be provided with magnetic boots (5) between its bottom and cooling channel (2), between cooling channel (2) and magnetic boots (5), be provided with magnet (3).
2. high-capacity planar magnetron sputtering cathode according to claim 1, it is characterized in that: described cooling channel (2) are made of cooling channel shell (6) and thermal transfer plate (7), cooling channel shell (6) is the groove shape structure of open topped, is equipped with thermal transfer plate (7) on cooling channel shell (6) top.
3. high-capacity planar magnetron sputtering cathode according to claim 2, it is characterized in that: the cross section of described cooling channel shell (6) is a trapezoidal shape cooling tank wide at the top and narrow at the bottom, and the arranged outside of (2) has the bar magnet (3) that matches with cooling channel shell (6) in the cooling channel.
4. high-capacity planar magnetron sputtering cathode according to claim 2, it is characterized in that: the cross section of described cooling channel shell (6) is the trapezoidal shape cooling tank wide at the top and narrow at the bottom more than 2 or 2, the arranged outside of (2) has the bar magnet (3) that matches with cooling channel shell (6) in the cooling channel, and is provided with taper or halfpace shape magnet (8) between 2 trapezoidal shape cooling tanks of cooling channel shell (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101433461A CN101418432B (en) | 2008-10-17 | 2008-10-17 | High-capacity planar magnetron sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101433461A CN101418432B (en) | 2008-10-17 | 2008-10-17 | High-capacity planar magnetron sputtering cathode |
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| Publication Number | Publication Date |
|---|---|
| CN101418432A CN101418432A (en) | 2009-04-29 |
| CN101418432B true CN101418432B (en) | 2010-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101433461A Active CN101418432B (en) | 2008-10-17 | 2008-10-17 | High-capacity planar magnetron sputtering cathode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240024693A1 (en) * | 2022-07-21 | 2024-01-25 | Henry Gonzalez | System for applying magnetic field to anesthetize a patient |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110531448B (en) * | 2019-09-04 | 2021-04-30 | 广东井泰科技有限公司 | Utilize VR antifog lens manufacture equipment of magnetism and water relation |
| CN113667947B (en) * | 2021-07-23 | 2023-04-21 | 镇江市德利克真空设备科技有限公司 | Be applied to intelligent temperature control device of negative pole platform |
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2008
- 2008-10-17 CN CN2008101433461A patent/CN101418432B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240024693A1 (en) * | 2022-07-21 | 2024-01-25 | Henry Gonzalez | System for applying magnetic field to anesthetize a patient |
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| Publication number | Publication date |
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| CN101418432A (en) | 2009-04-29 |
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Addressee: Hunan Yufeng Vacuum Science and Technology Co., Ltd. Finance Document name: Notification of Approving Refund |