[go: up one dir, main page]

CN1983644A - Production of monocrystalline silicon solar battery suede - Google Patents

Production of monocrystalline silicon solar battery suede Download PDF

Info

Publication number
CN1983644A
CN1983644A CNA2005101114532A CN200510111453A CN1983644A CN 1983644 A CN1983644 A CN 1983644A CN A2005101114532 A CNA2005101114532 A CN A2005101114532A CN 200510111453 A CN200510111453 A CN 200510111453A CN 1983644 A CN1983644 A CN 1983644A
Authority
CN
China
Prior art keywords
solution
naoh
alcohol
monocrystalline silicon
silicon solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005101114532A
Other languages
Chinese (zh)
Inventor
汪乐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Solar Energy Science and Technology Co Ltd
Original Assignee
Shanghai Solar Energy Science and Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Solar Energy Science and Technology Co Ltd filed Critical Shanghai Solar Energy Science and Technology Co Ltd
Priority to CNA2005101114532A priority Critical patent/CN1983644A/en
Publication of CN1983644A publication Critical patent/CN1983644A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention is concerned with a kind of production method for the textured single crystal silicon solar cell. Input single crystal silicon into alkaline eroded solution and the solution is mixed liquor made up by NaOH, alcohol and grape sugar. And the concentration of NaOH is 0.5-1.5%, the concentration of grape sugar is 1-5%, and NaOH solution: alcohol: grape sugar solution is (9-11) : 1 : ( 0.01-0.02), and the eroded temperature is 85 centigrade and the time is 30-45 minutes. The textured surface (positive pyramid) made by this method is small and symmetrical on the whole surface. The peak of pyramid is clear with low surface reflectivity about 8% and advances the short circuit current of cell and the photoelectric translation efficiency. It is fit for producing solar cell with large area, such as 125x125 mm2 and 56x156 mm2.

Description

Make the method for monocrystalline silicon solar battery suede
Technical field
The present invention relates to a kind of technology of utilizing monocrystalline silicon to prepare solar cell, be specifically related to a kind of preparation method of monocrystalline silicon solar battery suede.
Background technology
Solar cell can be transformed into electric energy with solar energy.In order to reduce the monocrystalline silicon surface reflection of light, increase the absorption of light, when making single crystal silicon solar cell, the silicon single crystal surface is made the positive tetrahedron of " positive pyramid " or " inverted pyramid " shape with chemical method or physical method.Wherein large-scale production of chemical method optimum and cost are lower.Therefore the enterprise of produce single crystal silicon solar cell generally all reaches the purpose of improving surface texture (being commonly called as " making matte ") by selective corrosion both at home and abroad.At present, all adopt N basically aThe OH aqueous solution adds a certain amount of alcohol at a certain temperature or isopropyl alcohol is realized as buffer.Wherein isopropyl alcohol is than the better effects if of alcohol, and quality is more stable, but cost is higher.Chinese patent CN1507075A also discloses a kind of " surface texture of monocrystaline silicon solar cell and preparation method thereof " on 06 23rd, 2004, and solar battery surface utilizes N aOH solution and aqueous isopropanol carry out anisotropic etch, make pyramid figure (positive tetrahedron), increase the sunlight absorbing surface, through repeatedly reflection, increase monocrystalline silicon surface and absorb.
Though the enterprise of domestic most of produce single crystal silicon solar cells all adopts alcohol to make buffer.But, the alcohol of the monocrystalline silicon of different lot numbers or different lot numbers often, the amount that adds alcohol when making matte is all different with Production Time.Like this, increased workman's the specification requirement and the unsteadiness of the quality of production.In addition, bubble is difficult for driving away in manufacturing process, occurs on the surface in many " raindrop " or " bright spot ".Promptly locate at " raindrop ", silicon face and solution is fully reaction not, at this place not form " pyramid ".Therefore, be necessary to seek and a kind ofly both reduced cost, improve " matte " quality and stability, make the easy to operate making of workman " matte " method again.
Summary of the invention
The purpose of this invention is to provide and a kind ofly both reduced cost, improve the method for the making monocrystalline silicon solar battery suede of " matte " quality and stability again.This method can reduce the formation of " raindrop ", under the situation of using static operation, produces the equally distributed pyramid of basic maintenance pinnacle of a pagoda, and anti-reflective effect is splendid.
In order to realize the foregoing invention purpose, a kind of method of making monocrystalline silicon solar battery suede that the present invention proposes on the basis of the silicon face of original NaOH and alcoholic solution anisotropic etch (100) direction, increases a kind of additive.Additive is the hydroxylated material that is different from alcohol and isopropyl alcohol, and promptly concentration is the glucose solution of 1-5%.Concrete technical scheme is: monocrystalline silicon is inserted in the caustic corrosion solution, this caustic corrosion solution is the mixed aqueous solution of NaOH, alcohol and glucose, wherein, the concentration of NaOH is 0.5-1.5%, the concentration of glucose is 1-5%, NaOH solution: alcohol: glucose solution=(9-11): 1: (0.01-0.02); Corrosion temperature is 85 ℃, and etching time is 30-45 minute, and aforementioned proportion is a volume ratio.
The inventive method adds additive in caustic corrosion solution, it can reduce the alcohol use amount can to make manufacturing process remain on inactive state, saves cost; Prepare the pyramid, stay-in-grade " matte " that keep most advanced and sophisticated, the matte quality is better than existing additive method, as depicted in figs. 1 and 2.Reach the battery surface reflectivity and reduce, the purpose that battery efficiency improves.Through detecting, the monocrystalline silicon solar battery suede reflectivity that uses the present invention to make reaches about 8%, is better than the reflectance value that other solution corrosion is made matte.Characteristics such as matte (pyramid) is little and even, covers whole surface, and the pyramid pinnacle of a pagoda is clear, and the matte reflectivity is low.Be fit to large tracts of land, as 125 * 125mm 2With 156 * 156mm 2The production of solar cell is used.
Description of drawings
Fig. 1 is to use the SEM profile of the matte silicon chip of the inventive method making;
Fig. 2 is to use certain angle of the matte silicon chip of the inventive method making to overlook SEM figure.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.
Embodiment 1
1, configuration caustic corrosion solution
2, monocrystalline silicon piece is under about 85 ℃, and dropping into concentration is to carry out reduction processing in the 20%NaOH solution, and the processing time is 5-10 minute, removes surface damage layer.
3, in pure water, wash, remove surface residue.
4, the silicon chip after the reduction processing is placed the solution of the making matte that has disposed, corrosion is 30-45 minute under 85 ℃ of left and right sides temperature.
5, in pure water, wash, remove surface residue.

Claims (1)

1, a kind of method of making monocrystalline silicon solar battery suede, it is characterized in that monocrystalline silicon is inserted in the caustic corrosion solution, this caustic corrosion solution is the mixed aqueous solution of NaOH, alcohol and glucose, wherein, the concentration of NaOH is 0.5-1.5%, the concentration of glucose is 1-5%, NaOH solution: alcohol: glucose solution=(9-11): 1: (0.01-0.02); Corrosion temperature is 85 ℃, and etching time is 30-45 minute, and aforementioned proportion is a volume ratio.
CNA2005101114532A 2005-12-13 2005-12-13 Production of monocrystalline silicon solar battery suede Pending CN1983644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2005101114532A CN1983644A (en) 2005-12-13 2005-12-13 Production of monocrystalline silicon solar battery suede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2005101114532A CN1983644A (en) 2005-12-13 2005-12-13 Production of monocrystalline silicon solar battery suede

Publications (1)

Publication Number Publication Date
CN1983644A true CN1983644A (en) 2007-06-20

Family

ID=38166006

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005101114532A Pending CN1983644A (en) 2005-12-13 2005-12-13 Production of monocrystalline silicon solar battery suede

Country Status (1)

Country Link
CN (1) CN1983644A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008145231A2 (en) * 2007-05-25 2008-12-04 Gebr. Schmid Gmbh & Co. Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer
CN101840961A (en) * 2010-03-31 2010-09-22 晶澳(扬州)太阳能光伏工程有限公司 Industrialized production process of crystalline silicon solar battery
DE102009060931A1 (en) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Method and apparatus for treating silicon substrates
CN102154712A (en) * 2011-03-10 2011-08-17 宁波尤利卡太阳能科技发展有限公司 Monocrystal silicon solar battery texture etching liquid and preparation method thereof
CN101752450B (en) * 2008-12-08 2012-02-08 湖南天利恩泽太阳能科技有限公司 Multiplex velvet making method for crystalline silicon solar battery slice
EP2458622A2 (en) 2010-11-24 2012-05-30 Air Products and Chemicals, Inc. Compositions and methods for texturing of silicon wafers
CN101423942B (en) * 2008-11-13 2012-09-05 蒋冬 Alkali etch solution and method for preparing monocrystalline silicon pile fabrics
CN104195644A (en) * 2014-07-27 2014-12-10 北京工业大学 Laser-chemical preparation method of monocrystal silicon substrate sub-micron pyramid structure

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008145231A2 (en) * 2007-05-25 2008-12-04 Gebr. Schmid Gmbh & Co. Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer
WO2008145231A3 (en) * 2007-05-25 2009-04-02 Schmid Gmbh & Co Geb Method for treating silicon wafers, corresponding treatment liquid and thus treated silicon wafer
CN101423942B (en) * 2008-11-13 2012-09-05 蒋冬 Alkali etch solution and method for preparing monocrystalline silicon pile fabrics
CN101752450B (en) * 2008-12-08 2012-02-08 湖南天利恩泽太阳能科技有限公司 Multiplex velvet making method for crystalline silicon solar battery slice
DE102009060931A1 (en) * 2009-12-23 2011-06-30 Gebr. Schmid GmbH & Co., 72250 Method and apparatus for treating silicon substrates
CN101840961A (en) * 2010-03-31 2010-09-22 晶澳(扬州)太阳能光伏工程有限公司 Industrialized production process of crystalline silicon solar battery
CN101840961B (en) * 2010-03-31 2013-01-16 晶澳(扬州)太阳能光伏工程有限公司 Industrialized production process of crystalline silicon solar battery
EP2458622A2 (en) 2010-11-24 2012-05-30 Air Products and Chemicals, Inc. Compositions and methods for texturing of silicon wafers
CN102154712A (en) * 2011-03-10 2011-08-17 宁波尤利卡太阳能科技发展有限公司 Monocrystal silicon solar battery texture etching liquid and preparation method thereof
CN104195644A (en) * 2014-07-27 2014-12-10 北京工业大学 Laser-chemical preparation method of monocrystal silicon substrate sub-micron pyramid structure
CN104195644B (en) * 2014-07-27 2016-08-24 北京工业大学 A kind of monocrystalline substrate submicron pyramid structure laser-chemical preparation process

Similar Documents

Publication Publication Date Title
CN102703989B (en) Class monocrystalline solar cells leather producing process
CN102181935B (en) Method and corrosive liquid for making texture surface of monocrystalline silicon
CN101876088B (en) Polycrystalline silicon texturing method
CN101540351B (en) A method of etching textured surface on the surface of monocrystalline silicon solar cell
CN102082199B (en) Groove notching and grid burying method for crystalline silicon solar cell
CN107268087A (en) A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting
CN107338480A (en) A kind of monocrystalline silicon silicon wafer fine hair making method and its flocking additive
CN103614778A (en) Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
CN102593268B (en) Method for carrying out cleaning and texture-surface-making on heterojunction solar cells by using texturing smoothing and rounding technique
CN103938276A (en) Monocrystalline silicon wafer texturing additive, texturing solution and corresponding texturing method
CN101570897A (en) Corrosive liquid used for monocrystal line silicon matte preparation and monocrystal line silicon matte preparation method
CN102005504A (en) Silicon wafer fine hair making method capable of improving solar cell conversion efficiency
CN102931290A (en) Polycrystalline silicon solar cell reworking method without damaging suede
CN102912451A (en) Low-cost monocrystalline silicon wafer texturing additive
CN102270702A (en) Rework process for texturing white spot monocrystalline silicon wafer
CN102468371A (en) Texturing method of quasi-monocrystalline silicon wafer
CN104562211A (en) Texture surface making method capable of improving conversion efficiency of monocrystal cell
CN112877784A (en) Additive for silicon wafer texturing by alkali liquor
CN103924305B (en) A kind of preparation method of pseudo single crystal silicon chip suede
CN102810596A (en) Suede preparation method of metallurgical-grade single crystal and mono-like silicon
CN107611226B (en) A kind of crystalline silicon method for manufacturing textured surface, solar battery and preparation method thereof
CN1983644A (en) Production of monocrystalline silicon solar battery suede
CN104060325A (en) Polycrystalline silicon texturing solution and texturing method thereof
CN103184523B (en) The preparation method of a kind of silicon single crystal Wool-making agent and textured mono-crystalline silicon
CN103413759B (en) A kind of etching method of polysilicon chip

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20070620