CN102931290A - Polycrystalline silicon solar cell reworking method without damaging suede - Google Patents
Polycrystalline silicon solar cell reworking method without damaging suede Download PDFInfo
- Publication number
- CN102931290A CN102931290A CN2012104947035A CN201210494703A CN102931290A CN 102931290 A CN102931290 A CN 102931290A CN 2012104947035 A CN2012104947035 A CN 2012104947035A CN 201210494703 A CN201210494703 A CN 201210494703A CN 102931290 A CN102931290 A CN 102931290A
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- Prior art keywords
- silicon chip
- solar cell
- silicon wafer
- hydrofluoric acid
- utilizing
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 34
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 26
- 239000002253 acid Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 229910021426 porous silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 230000002950 deficient Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 208000020442 loss of weight Diseases 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 208000016261 weight loss Diseases 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention provides a polycrystalline silicon solar cell reworking method without damaging suede, comprising the following steps of: firstly, utilizing hydrofluoric acid to wash phosphorosilicate glass formed on the surface of a silicon wafer after the silicon wafer is dispersed; then, utilizing de-ionized water to wash the residual hydrofluoric acid on the surface of the silicon wafer; utilizing an alkaline solution with the concentration of 1-10% to wash a dispersed face of the silicon wafer; utilizing acid mixing liquid of hydrochloric acid and the hydrofluoric acid to wash the silicon wafer to remove a residual solution and a foreign matter of potassium hydroxide; and finally, utilizing the de-ionized water to wash the silicon wafer and then drying; and repeatedly dispersing and producing according to a normal step. According to the method disclosed by the invention, the disadvantages of the prior art are overcome; an N type silicon layer of the dispersed face can be removed and the suede is not damaged; and the reject ratio of a reworking piece is greatly reduced, the conversion efficiency is improved and the cost is greatly reduced.
Description
Technical field
The present invention relates to a kind of polysilicon solar cell reworking method that does not damage matte, belong to the manufacture of solar cells manufacture technology field.
Background technology
At present, in the manufacture process of polysilicon solar cell, tend to because a variety of causes produces the sheet of doing over again in a large number.Traditional reworking method be adopt hydrofluoric acid and nitric acid mixed liquor again making herbs into wool remove the PN junction of diffusingsurface.Thickness of diffusion layer is relatively thin, generally all less than 0.5 micron.Although the method can be removed the n type semiconductor layer of diffusion into the surface fully, but because the mixed liquor of hydrofluoric acid and nitric acid is difficult to control too soon to the corrosion rate of silicon chip, can corrode too much the surface of polysilicon chip, thereby destroy the original suede structure of polycrystalline, make the dislocation place produce a large amount of black silks, smooth place can be polished, causes apparent defective.Because the destroyed conversion efficiency of original matte also can reduce greatly.General degradation rate reached 80% after the silicon chip that adopts conventional method to do over again was made solar energy Tianchi sheet, to the normal cell piece of producing low 0.5% of conversion efficiency ratio of solar energy.
Summary of the invention
When providing a kind of N-type silicon layer that can remove diffusingsurface, the technical problem to be solved in the present invention do not damage the polysilicon solar cell reworking method of matte.
In order to solve the problems of the technologies described above, technical scheme of the present invention provides a kind of polysilicon solar cell reworking method that does not damage matte, it is characterized in that: the method is comprised of following 6 steps:
Step 1: with the phosphorosilicate glass of hydrofluoric acid flush away silicon chip diffusion rear surface formation;
Step 2: with the hydrofluoric acid of deionized water cleaning silicon chip remained on surface;
Step 3: the aqueous slkali cleaning silicon chip diffusingsurface with 1%～10%;
Step 4: with the mixed acid liquid cleaning silicon chip of hydrochloric acid and hydrofluoric acid, remove Liquid Residue and the foreign matter of potassium hydroxide;
Step 5: with drying up behind the deionized water cleaning silicon chip;
Step 6: again press normal step production after the diffusion.
Preferably, alkali is potassium hydroxide or NaOH in the described step 3.
Preferably, foreign matter is silica, porous silicon or metal ion in the described step 4.
A kind of polysilicon solar cell reworking method aqueous slkali corrosion of silicon that does not damage matte provided by the invention is removed the N-type layer of silicon chip diffusingsurface totally, and alkali is relatively slow to the corrosion rate of silicon under the normal temperature, easily control.When guaranteeing to remove the N-type layer, reduce the too much corrosion to silicon, thereby reduce various negative effects.The degradation rate can be controlled in 10% after the silicon chip that adopts method provided by the invention to do over again was made solar energy Tianchi sheet, conversion efficiency to solar energy is hanged down in 0.1% than the normal cell piece of producing, greatly reduce the fraction defective of the sheet of doing over again, improved its conversion efficiency.
Compare conventional method, the unit price of alkali is more cheap than acid, and the consumption of alkali is lower more than 60% than the consumption of acid, and acid corrosion need to be reduced to the temperature of mixed acid liquid with refrigerator and could control reaction rate below 3 ℃, and caustic corrosion only needs just can implement at normal temperatures, and power consumption also reduces greatly.
Method provided by the invention has overcome the deficiencies in the prior art, does not damage matte when can remove the N-type silicon layer of diffusingsurface, greatly reduces the fraction defective of the sheet of doing over again, and has improved its conversion efficiency, and cost also reduces greatly.
Embodiment
For the present invention is become apparent, hereby be described in detail below with several preferred embodiments.
Embodiment 1
A kind of polysilicon solar cell reworking method that does not damage matte is comprised of following 6 steps:
Step 1: with the phosphorosilicate glass of hydrofluoric acid flush away silicon chip diffusion rear surface formation;
Step 2: with the hydrofluoric acid of deionized water cleaning silicon chip remained on surface;
Step 3: be higher than the process defective products of 75 Ω/ for sheet resistance, the potassium hydroxide solution cleaning silicon chip diffusingsurface with 5%, time 50～60s, 20 ℃ of temperature, loss of weight is controlled at 3～5mg; The silicon chip surface reflectivity is controlled at below 24%;
Step 4: with the mixed acid liquid cleaning silicon chip of hydrochloric acid and hydrofluoric acid, the foreign matters such as the Liquid Residue of removal potassium hydroxide and silica, porous silicon, metal ion;
Step 5: with drying up behind the deionized water cleaning silicon chip;
Step 6: again press normal step production after the diffusion.
After utilizing this method that the process defective products is done over again, its degradation rate is by original being reduced to more than 80% below 10%, and the loss of conversion efficiency reduces in 0.1% by original 0.3%.
Embodiment 2
A kind of polysilicon solar cell reworking method that does not damage matte is comprised of following 6 steps:
Step 1: with the phosphorosilicate glass of hydrofluoric acid flush away silicon chip diffusion rear surface formation;
Step 2: with the hydrofluoric acid of deionized water cleaning silicon chip remained on surface;
Step 3: be lower than the process defective products of 55 Ω/ for sheet resistance, the potassium hydroxide solution cleaning silicon chip diffusingsurface with 10%, time 50～60s, 20 ℃ of temperature, loss of weight is controlled at 8～10mg; The silicon chip surface reflectivity is controlled at below 26%;
Step 4: with the mixed acid liquid cleaning silicon chip of hydrochloric acid and hydrofluoric acid, the foreign matters such as the Liquid Residue of removal potassium hydroxide and silica, porous silicon, metal ion;
Step 5: with drying up behind the deionized water cleaning silicon chip;
Step 6: again press normal step production after the diffusion.
After utilizing this method that the process defective products is done over again, its degradation rate is by original being reduced to more than 80% below 15%, and the loss of conversion efficiency reduces in 0.1% by original 0.3%.
A kind of polysilicon solar cell reworking method that does not damage matte provided by the invention is applicable to spread semi-finished product polysilicon solar battery slice before the rear sintering technique of doing over again, and whole cleaning process can be finished with chain type texturing machine or etching machine.The concentration of aqueous slkali and the silicon chip etching time in alkali lye requires to do suitable adjustment according to corrosion weight loss amount and the technology controlling and process of reality.
A kind of polysilicon solar cell reworking method that does not damage matte provided by the invention is used the aqueous slkali corrosion of silicon, the N-type layer of silicon chip diffusingsurface is removed totally, generally with potassium hydroxide or NaOH.Its advantage is that alkali is relatively slow to the corrosion rate of silicon under the normal temperature, easily control.When guaranteeing to remove the N-type layer, reduce the too much corrosion to silicon, thereby reduce various negative effects.The degradation rate can be controlled in 10% after the silicon chip that adopts the caustic corrosion scheme to do over again was made solar energy Tianchi sheet, and the conversion efficiency of solar energy is hanged down in 0.1% than the normal cell piece of producing.Greatly reduce the fraction defective of the sheet of doing over again, improved its conversion efficiency.
Consider from the cost aspect, because the unit price of alkali is more cheap than acid, compare conventional method, the consumption of alkali is lower more than 60% than the consumption of acid, and acid corrosion need to be reduced to the temperature of mixed acid liquid below 3 ℃ with refrigerator and could control reaction rate, and caustic corrosion only needs just can implement at normal temperatures, and power consumption also reduces greatly.
Claims (3)
1. polysilicon solar cell reworking method that does not damage matte, it is characterized in that: the method is comprised of following 6 steps:
Step 1: with the phosphorosilicate glass of hydrofluoric acid flush away silicon chip diffusion rear surface formation;
Step 2: with the hydrofluoric acid of deionized water cleaning silicon chip remained on surface;
Step 3: the aqueous slkali cleaning silicon chip diffusingsurface with 1%～10%;
Step 4: with the mixed acid liquid cleaning silicon chip of hydrochloric acid and hydrofluoric acid, remove Liquid Residue and the foreign matter of potassium hydroxide;
Step 5: with drying up behind the deionized water cleaning silicon chip;
Step 6: again press normal step production after the diffusion.
2. a kind of polysilicon solar cell reworking method that does not damage matte as claimed in claim 1, it is characterized in that: alkali is potassium hydroxide or NaOH in the described step 3.
3. a kind of polysilicon solar cell reworking method that does not damage matte as claimed in claim 1, it is characterized in that: foreign matter is silica, porous silicon or metal ion in the described step 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012104947035A CN102931290A (en) | 2012-11-27 | 2012-11-27 | Polycrystalline silicon solar cell reworking method without damaging suede |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012104947035A CN102931290A (en) | 2012-11-27 | 2012-11-27 | Polycrystalline silicon solar cell reworking method without damaging suede |
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| CN102931290A true CN102931290A (en) | 2013-02-13 |
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| CN2012104947035A Pending CN102931290A (en) | 2012-11-27 | 2012-11-27 | Polycrystalline silicon solar cell reworking method without damaging suede |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367118A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | High-temperature alkali washing method for polycrystalline texturing |
| CN103441187A (en) * | 2013-08-30 | 2013-12-11 | 昊诚光电（太仓）有限公司 | Method for cleaning solar cell silicon wafer after polishing |
| CN103715306A (en) * | 2013-12-31 | 2014-04-09 | 巨力新能源股份有限公司 | Method for manufacturing solar cell through poor piece generated after wet etching of monocrystalline silicon piece |
| CN104157739A (en) * | 2014-09-02 | 2014-11-19 | 海南英利新能源有限公司 | Treatment method for unqualified silicon wafers |
| CN104779323A (en) * | 2015-04-21 | 2015-07-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Removing method for dead diffusion layers of crystalline silicon solar cells |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105470108A (en) * | 2015-09-28 | 2016-04-06 | 阳光大地（福建）新能源有限公司 | Rework processing method of solar cell diffusion-blackened sheet |
| CN107195728A (en) * | 2017-06-23 | 2017-09-22 | 江阴鑫辉太阳能有限公司 | A kind of solar cell is done over again the processing method of piece |
| CN107546117A (en) * | 2017-08-30 | 2018-01-05 | 平煤隆基新能源科技有限公司 | A kind of handling process of diffused sheet resistance abnormal silicon chip |
| CN109166944A (en) * | 2018-08-06 | 2019-01-08 | 浙江贝盛光伏股份有限公司 | A kind of technique for realizing polysilicon diffusing procedure exception piece quality qualification |
| CN111900232A (en) * | 2020-08-03 | 2020-11-06 | 中威新能源(成都)有限公司 | A method of bad rework in SHJ battery production |
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| CN102709163A (en) * | 2012-05-24 | 2012-10-03 | 中山大学 | Wool preparing process by crystalline silicon based on laser interference induced reaction |
| CN102768952A (en) * | 2012-08-01 | 2012-11-07 | 宁波尤利卡太阳能科技发展有限公司 | Method for reprocessing unqualified monocrystalline silicon wafers after diffusion |
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Patent Citations (5)
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| CN101369613A (en) * | 2008-10-16 | 2009-02-18 | 张根发 | Method for preparing polysilicon solar battery suede in magnetic field |
| CN101935884A (en) * | 2009-07-02 | 2011-01-05 | 比亚迪股份有限公司 | Method for preparing textured polycrystalline silicon wafer |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367118B (en) * | 2013-08-06 | 2015-12-09 | 中利腾晖光伏科技有限公司 | A kind of polycrystalline making herbs into wool high-temperature alkali cleaning method |
| CN103367118A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | High-temperature alkali washing method for polycrystalline texturing |
| CN103441187A (en) * | 2013-08-30 | 2013-12-11 | 昊诚光电（太仓）有限公司 | Method for cleaning solar cell silicon wafer after polishing |
| CN103715306A (en) * | 2013-12-31 | 2014-04-09 | 巨力新能源股份有限公司 | Method for manufacturing solar cell through poor piece generated after wet etching of monocrystalline silicon piece |
| CN103715306B (en) * | 2013-12-31 | 2016-06-08 | 巨力新能源股份有限公司 | After a kind of monocrystalline silicon piece wet etching, bad makes the method for solar cell |
| CN104157739A (en) * | 2014-09-02 | 2014-11-19 | 海南英利新能源有限公司 | Treatment method for unqualified silicon wafers |
| CN104779323A (en) * | 2015-04-21 | 2015-07-15 | 盐城阿特斯协鑫阳光电力科技有限公司 | Removing method for dead diffusion layers of crystalline silicon solar cells |
| CN104993014A (en) * | 2015-05-27 | 2015-10-21 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN105470108A (en) * | 2015-09-28 | 2016-04-06 | 阳光大地（福建）新能源有限公司 | Rework processing method of solar cell diffusion-blackened sheet |
| CN107195728A (en) * | 2017-06-23 | 2017-09-22 | 江阴鑫辉太阳能有限公司 | A kind of solar cell is done over again the processing method of piece |
| CN107546117A (en) * | 2017-08-30 | 2018-01-05 | 平煤隆基新能源科技有限公司 | A kind of handling process of diffused sheet resistance abnormal silicon chip |
| CN107546117B (en) * | 2017-08-30 | 2020-08-07 | 平煤隆基新能源科技有限公司 | Treatment process of diffusion sheet resistance abnormal silicon wafer |
| CN109166944A (en) * | 2018-08-06 | 2019-01-08 | 浙江贝盛光伏股份有限公司 | A kind of technique for realizing polysilicon diffusing procedure exception piece quality qualification |
| CN111900232A (en) * | 2020-08-03 | 2020-11-06 | 中威新能源(成都)有限公司 | A method of bad rework in SHJ battery production |
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Application publication date: 20130213 |