CN102703989B - Class monocrystalline solar cells leather producing process - Google Patents
Class monocrystalline solar cells leather producing process Download PDFInfo
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- CN102703989B CN102703989B CN201210168355.2A CN201210168355A CN102703989B CN 102703989 B CN102703989 B CN 102703989B CN 201210168355 A CN201210168355 A CN 201210168355A CN 102703989 B CN102703989 B CN 102703989B
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- silicon chip
- solution
- silicon
- washing
- corrosion
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000010985 leather Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 76
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 54
- 239000000243 solution Substances 0.000 claims abstract description 49
- 239000002253 acid Substances 0.000 claims abstract description 30
- 230000007797 corrosion Effects 0.000 claims abstract description 30
- 238000005260 corrosion Methods 0.000 claims abstract description 30
- 239000012670 alkaline solution Substances 0.000 claims abstract description 23
- 238000005406 washing Methods 0.000 claims abstract description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 14
- 239000003054 catalyst Substances 0.000 claims abstract description 7
- 239000003518 caustics Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 abstract description 29
- 210000002268 wool Anatomy 0.000 abstract description 27
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Weting (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses class monocrystalline solar cells leather producing process, comprise the following steps: silicon chip is put into HNO
3corrode with in the mixed acid solution of HF, and take out from mixed acid solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after acid corrosion; Dried silicon chip is put into KOH or the NaOH alkaline solution with single crystalline catalyst to corrode, and take out from alkaline solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after caustic corrosion.The present invention carries out making herbs into wool process to silicon chip by the way, and the intercrystalline difference in reflectivity of cell piece different size generated through the silicon chip of process of the present invention is little, and has good anti-decay property.
Description
Technical field
The present invention relates to photovoltaic art, specifically class monocrystalline solar cells leather producing process.
Background technology
Class monocrystalline silicon piece refers to that monocrystalline is main but containing local polycrystalline phase multiphase silicon chip mutually, and the grain-size of class monocrystalline is close to monocrystalline, and quality is better than polycrystalline, and cost is close to ingot casting polysilicon, and the application of class monocrystalline is more and more extensive in recent years.Silicon chip is for the manufacture of need through making herbs into wool process during solar cell, current polysilicon adopts the making herbs into wool of mixed acid solution low temperature, nitration mixture is utilized to obtain porous matte to after the isotropic etch of silicon chip surface, silicon single crystal adopts the making herbs into wool of alkaline solution high temperature, utilizes alkali to obtain pyramid matte to after the anisotropic etch of silicon chip surface.When class monocrystalline silicon piece is for the manufacture of solar cell, people usually select different making herbs into wool modes according to the ratio of large grain size area shared by silicon chip upper surface of class single-crystal surface, large grain size people when the area of silicon chip upper surface is more than 50% just adopt alkali making herbs into wool to reduce class monocrystalline silicon piece difference in appearance and efficiency discreteness, and large grain size people when the area of silicon chip upper surface is less than 50% just adopt sour making herbs into wool to ensure stability when class monocrystalline works.But, due to class monocrystalline silicon sheet surface grain size differ, impurity and crystal boundary skewness, the cell piece energy conversion efficiency that after adopting sour making herbs into wool, silicon chip is made can reduce, after adopting alkali making herbs into wool, the difference of anisotropic etch causes different intercrystalline difference in reflectivity to reach more than 16%, difference in appearance is comparatively large, and efficiency discreteness is large and decay is serious.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, can reduce the intercrystalline difference in reflectivity of silicon chip surface different size after providing a kind of making herbs into wool, and the cell piece generated after ensureing making herbs into wool has the class monocrystalline solar cells leather producing process of good anti-decay property.
Object of the present invention is achieved through the following technical solutions: class monocrystalline solar cells leather producing process, comprises the following steps:
Step a, silicon chip is put into HNO
3corrode with in the mixed acid solution of HF, and take out from mixed acid solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after acid corrosion;
Step b, dried silicon chip is put into KOH or the NaOH alkaline solution with single crystalline catalyst corrode, and take out from alkaline solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after caustic corrosion.Involved in the present invention to depth of corrosion obtain according to weigh before and after silicon slice corrosion of poor quality, the single-sided corrosion degree of depth=* of poor quality etches factor constant/2, wherein, the etching factor constant=long * of 1/(silicon chip wide * silicon density), depth of corrosion controls to reach by controlling the methods such as making herbs into wool time, Woolen-making liquid temperature, Woolen-making liquid concentration, adjusting ambient air draft.The present invention is when carrying out caustic corrosion process, and the single crystalline catalyst added in alkaline solution can adopt Virahol to replace, or carries out catalysis by the residue that reaction produces and do not add single crystalline catalyst and Virahol.The order of the present invention step a and step b when applying can be exchanged.
In described step a from mixed acid solution take out silicon chip further comprising the steps of before carrying out washing and drying process: by the silicon chip taken out from mixed acid solution through washing after put into concentration lower than 5% KOH or NaOH solution clean, then by silicon chip through washing put into again concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean.Wherein, concentration be less than 5% KOH or NaOH dilute solution wash away the residual acid of silicon chip surface and porous silicon at normal temperatures, HCl concentration lower than 10% and HF concentration lower than 5% dilute solution under normal temperature condition, wash away the residual alkali of silicon chip surface, another effect removing heavy metal of HCl promotes cell piece efficiency, and another effect of HF is removed silicon chip surface oxide compound and reached hydrophobic interaction.
In described step b from alkaline solution take out silicon chip further comprising the steps of before carrying out washing and drying process: by the silicon chip taken out from alkaline solution through washing after put into concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean.Adopt in step b concentration lower than 10% HCl solution and concentration lower than 5% HF solution silicon chip is cleaned, HCl solution is identical with the effect of HF solution with HCl solution in step a with HF solution.
In described HNO3 and HF mixed acid solution, the volume ratio of HNO3 and HF is between 3:1 ~ 5:1.
In described step b, KOH or the NaOH alkaline concentration of corrosion of silicon is 1.0 ~ 2.0%.
Described silicon chip is at HNO
3be 5 ~ 10 DEG C with the temperature of mixed acid solution when corroding in HF mixed acid solution, when described silicon chip corrodes in KOH or NaOH alkaline solution, KOH or NaOH alkaline solution temperature are 75 ~ 85 DEG C.The present invention, by the temperature when corroding silicon chip sets to mixed acid solution and alkaline solution, so can activate solution and solution evaporation can not be caused again too many.
The present invention, when manufacturing solar battery sheet, also needs the silicon chip after to making herbs into wool to carry out following process: one, make P-N junction by diffusion; Two, remove back of the body knot by etching and remove phosphorosilicate glass; Three, be there is by plasma reinforced chemical vapour deposition the SixNy film of reflection preventing ability; Four, the silk screen printing back side and front slurry; Five, sintering forms ohmic contact; Six, test draws electrical performance data.
Compared with prior art, the present invention has following beneficial effect: the present invention includes and silicon chip is put into HNO
3corrode with in the mixed acid solution of HF, and dried silicon chip is put into KOH or the NaOH alkaline solution with single crystalline catalyst corrode, the present invention carries out isotropic etch by sour making herbs into wool and reduces silicon chip difference in appearance and efficiency decay, and sour making herbs into wool can ensure that the intercrystalline difference in reflectivity of silicon chip surface different size diminishes, the anti-decay property of silicon chip improves; The present invention makes reflection efficiency lower by alkali making herbs into wool, improves the energy conversion efficiency of the cell piece that silicon chip is made, different intercrystalline difference in reflectivity after the reaction of the isotropy of sour making herbs into wool reduce further alkali making herbs into wool; The present invention can directly process class monocrystalline silicon piece, and the manpower that the per-cent shared by region class monocrystalline silicon sheet surface large grain size can be avoided to cause expends, and saves manpower, reduces costs.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of the embodiment of the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment:
As shown in Figure 1, class monocrystalline solar cells leather producing process, comprise sour making herbs into wool and alkali making herbs into wool two steps, wherein sour making herbs into wool comprises HNO
3with HF acid making herbs into wool-washing-alkali cleaning-washing-pickling-washing-drying; Alkali making herbs into wool comprises the making herbs into wool-washing-pickling-washing-drying of KOH or NaOH alkali.Wherein, the detailed process of sour making herbs into wool is: silicon chip is put into the HNO that temperature is 5 ~ 10 DEG C
3corrode with in the mixed acid solution of HF, and take out from mixed acid solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um; By the silicon chip taken out from mixed acid solution through washing after put into concentration lower than 5% KOH or NaOH solution clean, then by silicon chip through washing put into again concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean; Finally washing and drying process is carried out to the silicon chip after acid corrosion.Wherein, in HNO3 and HF mixed acid solution the volume ratio of HNO3 and HF between 3:1 ~ 5:1.
The detailed process of alkali making herbs into wool is: dried silicon chip is put into concentration be 1.0 ~ 2.0% KOH or NaOH alkaline solution corrode, single crystalline catalyst is added in KOH or NaOH alkaline solution, and the temperature of KOH or NaOH alkaline solution is set as 75 ~ 85 DEG C, take out from alkaline solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um; By the silicon chip taken out from alkaline solution through washing after put into concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean; Finally washing and drying process is carried out to the silicon chip after caustic corrosion.
The depth of corrosion of acid making herbs into wool and alkali making herbs into wool obtains according to weigh before and after silicon slice corrosion of poor quality, the single-sided corrosion degree of depth=* of poor quality etches factor constant/2, wherein, the etching factor constant=long * of 1/(silicon chip wide * silicon density), depth of corrosion controls to reach by controlling the methods such as making herbs into wool time, Woolen-making liquid temperature, Woolen-making liquid concentration, adjusting ambient air draft.
As mentioned above, then well the present invention can be realized.
Claims (6)
1. class monocrystalline solar cells leather producing process, is characterized in that, comprises the following steps:
Step a, silicon chip is put into HNO
3corrode with in the mixed acid solution of HF, and take out from mixed acid solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after acid corrosion;
Step b, dried silicon chip is put into KOH or the NaOH alkaline solution with single crystalline catalyst corrode, and take out from alkaline solution when the silicon slice corrosion degree of depth reaches 2 ~ 2.5um, then washing and drying process is carried out to the silicon chip after caustic corrosion; Depth of corrosion obtains according to weigh before and after silicon slice corrosion of poor quality, and the single-sided corrosion degree of depth=* of poor quality etches factor constant/2, wherein, and the etching factor constant=long * of 1/(silicon chip wide * silicon density).
2. class monocrystalline solar cells leather producing process according to claim 1, it is characterized in that, in described step a from mixed acid solution take out silicon chip further comprising the steps of before carrying out washing and drying process: by the silicon chip taken out from mixed acid solution through washing after put into concentration lower than 5% KOH or NaOH solution clean, then by silicon chip through washing put into again concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean.
3. class monocrystalline solar cells leather producing process according to claim 1, it is characterized in that, in described step b from alkaline solution take out silicon chip further comprising the steps of before carrying out washing and drying process: by the silicon chip taken out from alkaline solution through washing after put into concentration lower than 10% HCl solution and concentration lower than 5% HF solution clean.
4. class monocrystalline solar cells leather producing process according to claim 1, is characterized in that, described HNO
3with HNO in HF mixed acid solution
3and the volume ratio of HF is between 3:1 ~ 5:1.
5. class monocrystalline solar cells leather producing process according to claim 1, is characterized in that, in described step b, KOH or the NaOH alkaline concentration of corrosion of silicon is 1.0 ~ 2.0%.
6. the class monocrystalline solar cells leather producing process according to any one of Claims 1 to 5, it is characterized in that, described silicon chip is at HNO
3be 5 ~ 10 DEG C with the temperature of mixed acid solution when corroding in HF mixed acid solution, when described silicon chip corrodes in KOH or NaOH alkaline solution, KOH or NaOH alkaline solution temperature are 75 ~ 85 DEG C.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210168355.2A CN102703989B (en) | 2012-05-28 | 2012-05-28 | Class monocrystalline solar cells leather producing process |
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| CN201210168355.2A CN102703989B (en) | 2012-05-28 | 2012-05-28 | Class monocrystalline solar cells leather producing process |
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| CN102703989A CN102703989A (en) | 2012-10-03 |
| CN102703989B true CN102703989B (en) | 2015-12-02 |
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| CN201210168355.2A Expired - Fee Related CN102703989B (en) | 2012-05-28 | 2012-05-28 | Class monocrystalline solar cells leather producing process |
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| CN103021832A (en) * | 2012-12-03 | 2013-04-03 | 天津中环领先材料技术有限公司 | Processing technology of appearance improvement of silicon wafer corroded surface through alkali corrosion |
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| CN103199005B (en) * | 2013-03-11 | 2015-12-23 | 常州捷佳创精密机械有限公司 | A kind of cleaning process of crystal silicon chip |
| CN103151425B (en) * | 2013-03-18 | 2015-07-01 | 内蒙古日月太阳能科技有限责任公司 | Polycrystalline silicon alkaline texturing method |
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| CN103367118B (en) * | 2013-08-06 | 2015-12-09 | 中利腾晖光伏科技有限公司 | A kind of polycrystalline making herbs into wool high-temperature alkali cleaning method |
| CN104347756A (en) * | 2013-08-08 | 2015-02-11 | 上海神舟新能源发展有限公司 | One-sided polishing method for monocrystalline silicon wafer for solar battery |
| CN103400901B (en) * | 2013-08-12 | 2016-02-24 | 江苏宇兆能源科技有限公司 | A kind of anticaustic process for etching of solar cell surface |
| CN103441070B (en) * | 2013-08-22 | 2015-12-09 | 常州捷佳创精密机械有限公司 | A kind of etching device of crystal silicon chip and process for etching method |
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| CN103746044A (en) * | 2014-01-29 | 2014-04-23 | 北京七星华创电子股份有限公司 | Preparation method of single crystalline silicon solar cell with back polished structure |
| CN104218122B (en) * | 2014-08-28 | 2016-08-17 | 奥特斯维能源（太仓）有限公司 | A kind of etching method of the polysilicon emitter rate reducing diamond wire cutting |
| CN104752566A (en) * | 2015-04-24 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Polycrystalline silicon battery texturing process |
| CN106409658A (en) * | 2016-09-22 | 2017-02-15 | 山西潞安太阳能科技有限责任公司 | Cleaning process of monocrystalline silicon wafer |
| CN107658247A (en) * | 2017-09-12 | 2018-02-02 | 北京旭日龙腾新能源科技有限公司 | Preparation facilities of substrate surface light trapping structure and preparation method thereof |
| CN108987531A (en) * | 2018-07-20 | 2018-12-11 | 通威太阳能（安徽）有限公司 | One type monocrystalline PERC preparation method of solar battery |
| CN111769053A (en) * | 2019-12-31 | 2020-10-13 | 保定光为绿色能源科技有限公司 | Silicon crystal groove type wet-process texturing circulating filtration treatment method |
| CN114459946A (en) * | 2022-01-29 | 2022-05-10 | 西安奕斯伟材料科技有限公司 | Method and equipment for testing metal content of silicon wafer |
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