CN103413759B - A kind of etching method of polysilicon chip - Google Patents
A kind of etching method of polysilicon chip Download PDFInfo
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- CN103413759B CN103413759B CN201310340868.1A CN201310340868A CN103413759B CN 103413759 B CN103413759 B CN 103413759B CN 201310340868 A CN201310340868 A CN 201310340868A CN 103413759 B CN103413759 B CN 103413759B
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- polysilicon chip
- parts
- hno
- solution
- corrosion
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 56
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 53
- 238000005530 etching Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000002253 acid Substances 0.000 claims abstract description 33
- 238000005260 corrosion Methods 0.000 claims abstract description 32
- 230000007797 corrosion Effects 0.000 claims abstract description 32
- 239000003518 caustics Substances 0.000 claims abstract description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 51
- 239000000243 solution Substances 0.000 claims description 32
- 239000000654 additive Substances 0.000 claims description 25
- 230000000996 additive effect Effects 0.000 claims description 24
- 229910017604 nitric acid Inorganic materials 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 8
- 239000008103 glucose Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 8
- 235000010234 sodium benzoate Nutrition 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 239000004299 sodium benzoate Substances 0.000 claims description 7
- 239000001509 sodium citrate Substances 0.000 claims description 7
- 235000011083 sodium citrates Nutrition 0.000 claims description 7
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical class [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 abstract description 14
- 210000002268 wool Anatomy 0.000 abstract description 14
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005532 trapping Effects 0.000 description 2
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical class [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 235000011091 sodium acetates Nutrition 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention discloses a kind of etching methods of polysilicon chip, and the mode making herbs into wool of acid corrosion is first carried out to polysilicon chip, and etch pit is formed on surface；Then the mode making herbs into wool for carrying out caustic corrosion to polysilicon chip again, corrodes in the pit that acid corrosion is formed and pyramidal pattern, can not only reduce the reflectivity of polycrystalline cell piece, can also improve the performance parameter and transfer efficiency of class monocrystalline solar cell electricity.
Description
Technical field
The present invention relates to a kind of etching methods of polysilicon chip, belong to crystal silicon solar batteries field.
Background technology
Currently, making herbs into wool is to prepare the method with the silicon face for reducing reflection function, by crystalline silicon silicon surface-texturing,
The absorption for promoting sunlight using the light trapping effect on surface, improves the transfer efficiency of polycrystalline solar cell.Polycrystalline silicon solar
It is generally used acid corrosion in the manufacturing process of battery（HF+HNO3）Mode making herbs into wool, monocrystaline silicon solar cell generally uses
Caustic corrosion（NaOH/KOH+ flocking additives）Making herbs into wool.
Making herbs into wool reduces the reflectivity of silicon chip limited by the way of acid corrosion（It is reduced to 27% or so by 30%）, and due to
There are multiple crystal orientation for polycrystalline silicon on piece, if the making herbs into wool directly by the way of caustic corrosion, each crystal orientation reaction rate difference is larger,
Silicon chip surface reflectivity is caused to rise.
Invention content
The object of the present invention is to provide a kind of etching methods of polysilicon chip, and the mode of acid corrosion is first carried out to polysilicon chip
Then making herbs into wool again carries out polysilicon chip the mode making herbs into wool of caustic corrosion, can not only reduce the reflectivity of polycrystalline cell piece, may be used also
To improve the performance parameter and transfer efficiency of class monocrystalline solar cell electricity.
A kind of etching method of polysilicon chip, the HF and HNO for being 4-10 DEG C in temperature by polysilicon chip3Mixed acid solution
Corrode 1-2min, every polysilicon chip etching extent control is in 0.35-0.45g；The polysilicon chip after acid corrosion is put into temperature again
For 3-5min in 40-60 DEG C of caustic corrosion solution, every polysilicon chip etching extent control 0.05-0.1g to get.
HF involved in the present invention and HNO3Mixed acid solution in HF mass concentrations be 6-8%, HNO3Mass concentration is 35-
40%。
Caustic corrosion solution involved in the present invention is the aqueous solution of NaOH or KOH and flocking additive, wherein NaOH or KOH
Mass concentration is 0.1-0.5%, and flocking additive mass concentration is 0.1-0.3%.
Flocking additive by following masses number material composition be 82.0-86.0 parts of water, 0.4-0.8 parts of sodium benzoates,
0.2-0.4 parts of sodium acetates, 3.0-5.0 parts of sodium citrates, 1.0-2.0 parts of disodium ethylene diamine tetraacetates, 8.0-10.0 parts of glucose.
The present invention first uses the mode making herbs into wool of acid corrosion, forms etch pit on polysilicon chip surface, then uses the side of caustic corrosion
Formula making herbs into wool corrodes in the pit that acid corrosion is formed and pyramidal pattern, forms more light trappings, after changing corrosion
Wafer topography structure reduce polysilicon making herbs into wool after reflectivity, and improve class monocrystalline solar cell electricity performance join
Number and transfer efficiency.
Specific implementation mode:
Embodiment 1：
A kind of etching method of polysilicon chip, the HF and HNO for being 4 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
1min is lost, every polysilicon chip etching extent control is in 0.35g；The polysilicon chip after acid corrosion is put into the alkali that temperature is 40 DEG C again
3min in etchant solution, the control of every polysilicon chip etching extent 0.05g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 6%, HNO3Mass concentration is 35%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.1%, flocking additive mass concentration is 0.1%.
Flocking additive is 82.0 parts of water, 0.4 part of sodium benzoate, 0.2 part of acetic acid by the material composition of following masses number
Sodium, 3.0 parts of sodium citrates, 1.0 parts of disodium ethylene diamine tetraacetates, 8.0 parts of glucose.
Embodiment 2：
A kind of etching method of polysilicon chip, the HF and HNO for being 7 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
1.5min is lost, every polysilicon chip etching extent control is in 0.40g；It is 50 DEG C that the polysilicon chip after acid corrosion, which is put into temperature, again
4min in caustic corrosion solution, the control of every polysilicon chip etching extent 0.08g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 7%, HNO3Mass concentration is 37%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.3%, flocking additive mass concentration is 0.2%.
Flocking additive is 84.0 parts of water, 0.6 part of sodium benzoate, 0.3 part of acetic acid by the material composition of following masses number
Sodium, 4.0 parts of sodium citrates, 1.5 parts of disodium ethylene diamine tetraacetates, 9.0 parts of glucose.
Embodiment 3：
A kind of etching method of polysilicon chip, the HF and HNO for being 10 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
2min is lost, every polysilicon chip etching extent control is in 0.45g；The polysilicon chip after acid corrosion is put into the alkali that temperature is 60 DEG C again
5min in etchant solution, the control of every polysilicon chip etching extent 0.1g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 8%, HNO3Mass concentration is 40%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.5%, flocking additive mass concentration is 0.3%.
Flocking additive is 86.0 parts of water, 0.8 part of sodium benzoate, 0.4 part of acetic acid by the material composition of following masses number
Sodium, 5.0 parts of sodium citrates, 2.0 parts of disodium ethylene diamine tetraacetates, 10.0 parts of glucose.
Embodiment 4：
A kind of etching method of polysilicon chip, the HF and HNO for being 12 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
3min is lost, every polysilicon chip etching extent control is in 0.30g；The polysilicon chip after acid corrosion is put into the alkali that temperature is 35 DEG C again
2min in etchant solution, the control of every polysilicon chip etching extent 0.15g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 5%, HNO3Mass concentration is 42%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.6%, flocking additive mass concentration is 0.08%.
Flocking additive is 80.0 parts of water, 0.9 part of sodium benzoate, 0.5 part of acetic acid by the material composition of following masses number
Sodium, 6.0 parts of sodium citrates, 3.0 parts of disodium ethylene diamine tetraacetates, 7.0 parts of glucose.
Embodiment 5：
A kind of etching method of polysilicon chip, the HF and HNO for being 5 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
1min is lost, every polysilicon chip etching extent control is in 0.37g；The polysilicon chip after acid corrosion is put into the alkali that temperature is 45 DEG C again
3min in etchant solution, the control of every polysilicon chip etching extent 0.06g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 10%, HNO3Mass concentration is 30%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.2%, flocking additive mass concentration is 0.1%.
Flocking additive is 83.0 parts of water, 0.5 part of sodium benzoate, 0.2 part of acetic acid by the material composition of following masses number
Sodium, 3.5 parts of sodium citrates, 1.2 parts of disodium ethylene diamine tetraacetates, 8.5 parts of glucose.
Embodiment 6：
A kind of etching method of polysilicon chip, the HF and HNO for being 9 DEG C in temperature by polysilicon chip3Mixed acid solution it is rotten
2min is lost, every polysilicon chip etching extent control is in 0.42g；The polysilicon chip after acid corrosion is put into the alkali that temperature is 55 DEG C again
5min in etchant solution, the control of every polysilicon chip etching extent 0.09g to get.
HF and HNO3Mixed acid solution in HF mass concentrations be 8%, HNO3Mass concentration is 35%.
Caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.4%, flocking additive mass concentration is 0.3%.
Flocking additive is 80.0 parts of water, 0.7 part of sodium benzoate, 6.0 portions of lemons by the material composition of following masses number
Sour sodium, 3.0 parts of disodium ethylene diamine tetraacetates, 7.0 parts of glucose.
Comparative example 1：
Normal polycrystalline process for etching：The HF and HNO for being 4-10 DEG C in temperature by polysilicon chip3Mixed acid system corrode 1-
2min, every polysilicon chip corrode weight 0.4-0.5g, wherein HF and HNO3Mixed acid system in HF mass concentrations be 6-8%,
HNO3Mass concentration is 35-40%.
Monocrystalline/poly-region reflectivity comparative situation such as following table institute after each embodiment and comparative example making herbs into wool and after plated film
Show：
After new process for etching making herbs into wool using the present invention, luminance factor normal process reduces 4-5%, an especially embodiment 2
Reflectivity is minimum.
Class monocrystalline solar cell unit for electrical property parameters made from various embodiments of the present invention and comparative example is as shown in the table：
The reflectivity for the new process for etching that the present invention uses is relatively low, is conducive to polycrystalline silicon solar cell photoelectric conversion efficiency
Promote especially short circuit current（Isc）Increase, battery conversion efficiency（Eta）The property of certain promotion, especially embodiment 2
Energy parameter is optimal, meets increasingly increased production requirement.
Claims (1)
1. a kind of etching method of polysilicon chip, it is characterised in that：The HF and HNO for being 7 DEG C in temperature by polysilicon chip3Mixing
Acid solution corrodes 1.5min, and every polysilicon chip etching extent control is in 0.40g；The polysilicon chip after acid corrosion is put into temperature again
For 4min in 50 DEG C of caustic corrosion solution, every polysilicon chip etching extent control 0.08g to get；
The HF and HNO3Mixed acid solution in HF mass concentrations be 7%, HNO3Mass concentration is 37%；
The caustic corrosion solution is the aqueous solution of NaOH or KOH and flocking additive, and wherein NaOH or KOH mass concentrations are
0.3%, flocking additive mass concentration is 0.2%；
The flocking additive is 84.0 parts of water, 0.6 part of sodium benzoate, 0.3 part of acetic acid by the material composition of following masses number
Sodium, 4.0 parts of sodium citrates, 1.5 parts of disodium ethylene diamine tetraacetates, 9.0 parts of glucose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340868.1A CN103413759B (en) | 2013-08-07 | 2013-08-07 | A kind of etching method of polysilicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340868.1A CN103413759B (en) | 2013-08-07 | 2013-08-07 | A kind of etching method of polysilicon chip |
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| Publication Number | Publication Date |
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| CN103413759A CN103413759A (en) | 2013-11-27 |
| CN103413759B true CN103413759B (en) | 2018-08-10 |
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| CN201310340868.1A Active CN103413759B (en) | 2013-08-07 | 2013-08-07 | A kind of etching method of polysilicon chip |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009114B (en) * | 2013-05-22 | 2016-08-10 | 江苏爱多光伏科技有限公司 | Method for manufacturing quasi-monocrystalline silicon solar cells |
| CN105023960A (en) * | 2014-12-19 | 2015-11-04 | 广西大学 | Method of manufacturing antireflection texture of solar cell |
| CN105220235B (en) | 2015-10-12 | 2017-12-08 | 常州捷佳创精密机械有限公司 | A kind of single polycrystalline etching method |
| CN108400201A (en) * | 2018-03-14 | 2018-08-14 | 江苏大学 | A kind of lithographic method of polysilicon surface pyramid matte |
| CN108538936A (en) * | 2018-03-15 | 2018-09-14 | 江苏大学 | A kind of method that polysilicon chip and its surface earthworm shape etch pit are formed |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | A method for reducing the reflectivity of polycrystalline texture |
| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
-
2013
- 2013-08-07 CN CN201310340868.1A patent/CN103413759B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794843A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | A method for reducing the reflectivity of polycrystalline texture |
| CN101818378A (en) * | 2010-04-26 | 2010-09-01 | 江苏林洋新能源有限公司 | Velvet manufacturing solution of monocrystalline silicon additive |
| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
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