CN1445846A - 芯片比例封装及其制造方法 - Google Patents
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Abstract
公开了一种芯片比例封装以及制造该芯片比例封装的方法。芯片比例封装包括形成在绝缘层上并通过指定距离使彼此分开以便连接到两个端子的每一个上的第一和第二导电层,形成在芯片的第二表面上以便连接到芯片的第二表面的端子的第三导电层,以及形成在第一、第二和第三导电层的每个指定侧面上的电极面。在总的封装尺寸方面小型化芯片比例封装。另外,制造芯片比例封装的方法不需要引线接合步骤或通孔形成步骤,从而简化芯片比例封装的制造过程并提高芯片比例封装的可靠性。
Description
技术领域
本发明涉及芯片比例封装,更具体地说涉及包含芯片类型器件即在一个表面上具有两个端子以及在另一表面上具有一个端子的晶体管的芯片比例封装以及制造该芯片比例封装的方法。
背景技术
通常,封装如晶体管的半导体器件,然后将这些封装的器件安装在印刷电路板上。结构上,该封装容易将半导体器件的端子连接到印刷电路板的相应信号图案上并用来保护半导体器件免受外应力,从而提高封装的可靠性。
为满足近来半导电体产品小型化的趋势,也已经小型化半导体芯片封装,因此,已经引入芯片比例封装(也称为“芯片尺寸封装”)。
图1是常规芯片比例封装的示意性剖视图。图1的芯片比例封装10的结构采用陶瓷衬底1并且是具有三个端子的晶体管封装。
参考图1,在陶瓷衬底1上形成三个通孔,即第一通孔2a、第二通孔2b和第三通孔2c。用导电材料填充第一、第二和第三通孔2a、2b和2c以便将衬底1的上表面电连接到衬底1的下表面。然后,分别在第一、第二和第三通孔2a、2b和2c的上表面上形成第一、第二和第三上导电焊盘3a、3b和3c。分别在第一、第二和第三通孔2a、2b和2c的下表面上形成第一、第二和第三下导电焊盘4a、4b和4c。将第三上导电焊盘3c直接连接到在晶体管5的下表面上形成的端子上,即,印刷电路板上的晶体管5的安装面,以及将第一和第二上导电焊盘3a和3b通过导线7连接到形成在晶体管5的上表面上的另一端子。在包括晶体管5的陶瓷衬底1的上表面形成使用常规树脂的模塑件9以便保护晶体管5免受外应力。从而完成制造封装10。
图2是常规芯片比例封装组件的剖视图,其中将芯片比例封装安装在印刷电路板上。
如图2所示,通过回流焊接将制造的晶体管封装10安装在印刷电路板20上。即,通过在印刷电路板20的相应信号图案上排列封装10的下导电焊盘4a、4b和4c,然后用焊料15将下导电焊盘4a、4b和4c连接到印刷电路板20的信号图案上,将晶体管封装10安装在印刷电路板20上。
如图1和2所示,由于晶体管通常具有在其两个相对面的每一个上的端子,这些端子必须通过导线内连。然而,这些导线需要芯片的上表面上的很大空间,从而增加了封装的整个高度。另外,由于必须在陶瓷衬底上形成与晶体管的端子数量相应的至少三个通孔,另外要求与通孔的总直径一样大的区域。此外,为了不使在通孔的上表面和下表面上形成的导电焊盘相互连接,必须用最小间隔使导电焊盘彼此分开。因此,衬底具有大尺寸以便满足上述条件,并且衬底的尺寸在小型化封装方面强加了限制。
另外,由上述封装采用的陶瓷衬底价格很高,从而增加了封装的生产成本。因此,常规的封装制造过程要求引线接合步骤以及模塑步骤以及芯片焊接(die-bonding)步骤,从而变得更加复杂。
因此,要求一种能小型化封装的尺寸以及简单其制造过程的封装技术。
发明内容
因此,鉴于上述问题创造了本发明,以及本发明的一个目的是通过在除用于两个端子区域以外的芯片的上表面上形成绝缘层、通过在绝缘层的上表面和芯片的下表面上形成上导电层和下导电层以便连接到每个端子,以及通过在上导电层和下导电层的相同侧面上形成电极面以便连接到印刷电路板的相应连接焊盘上来提供一种小型化和更容易制造的芯片比例封装,从而提高封装的可靠性。
本发明的另一目的是根据芯片比例封装的结构,提供一种具有创新安装方法的芯片封装装置。
本发明的另一目的是提供一种制造芯片比例封装的方法。
根据本发明的一个方面,通过提供包括芯片的芯片比例封装来实现上述和其他目的,该芯片包括具有两个第一端子的第一表面以及具有第二端子的第二表面,第二表面与第一表面相对、在除用于两个端子的区域以外的芯片的第一表面上形成的绝缘层、在绝缘层上形成的并按指定距离彼此分开以便连接到两个端子的每一个上的第一和第二导电层、形成在芯片的第二表面上以便连接到芯片的第二表面的端子上的第三导电层、以及形成在第一、第二和第三导电层的每个指定侧面上的电极面。
根据本发明的另一方面,提供一种包括芯片比例封装和印刷电路板的芯片比例封装组件。芯片比例封装包括芯片,该芯片包括具有两个第一端子的第一表面以及具有第二端子的第二表面,第二表面与第一表面相对、在除用于两个端子的区域以外的芯片的第一表面上形成的绝缘层、在绝缘层上形成的并按指定距离彼此分开以便连接到两个端子的每一个上的第一和第二导电层、形成在芯片的第二表面上以便连接到芯片的第二表面的端子上的第三导电层、以及形成在第一、第二和第三导电层的每个指定侧面上的电极面。印刷电路板包括至少三个连接焊盘,以及连接到连接焊盘的电路图案。在这里,将芯片比例封装安装在印刷电路板上以便将芯片的电极面连在印刷电路板的每个连接焊盘上。
根据本发明的另一方面,提供一种制造芯片比例封装的方法,包括步骤:准备包括多个芯片的晶片,芯片包括分别在其上表面上的两个端子以及在其下表面上的端子;在除用于两个端子的区域以外的晶片的上表面上形成绝缘层;在绝缘层上形成上导电层以便连接到芯片的上表面的两个端子的每一个上;在芯片的下表面上形成下导电层以便连接到芯片的下表面的端子上;一次切割晶片以便形成芯片比例封装的一个侧面;在上导电层和下导电层的侧面上形成电极面,侧面形成在通过一次切割晶片获得的芯片比例封装的侧面上;将形成在绝缘层上的上导电层划分成连接到两个端子的每一个的两个区域;以及将晶片二次切割成封装单元。
附图说明
从下面参考附图的描述将更容易理解本发明的上述和其他目的、特征和其他优点,其中:
图1是常规芯片比例封装的示意性剖视图;
图2是常规芯片比例封装组件的剖视图,其中将芯片比例封装安装在印刷电路板上;
图3a和3b是根据本发明的优选实施例的芯片比例封装的透视图和剖视图;
图4是芯片比例封装组件的透视图,其中根据本发明的优选实施例,将芯片比例封装安装在印刷电路板上;
图5a至5f是根据本发明的优选实施例,描述制造芯片比例封装的方法的每个步骤的透视图。
具体实施方式
现在,将参考附图来详细地描述本发明的优选实施例。
图3a和3b是根据本发明的优选实施例,芯片比例封装的透视图和剖视图。
参考图3a,芯片比例封装30包括芯片35、形成在芯片35上的绝缘层33、形成在绝缘层33的上表面以及芯片35的下表面上的导电层31a、31b和31c以及形成在导电层31a、31b和31c的侧面上的电极面37a、37b和37c。在这里,具有电极面37a、37b和37c的导电层31a、31b和31c的侧面均在芯片35的相同侧面上。图3a中未示出,在芯片35的上表面上形成两个端子,以及在芯片35的下表面上形成一个端子。例如,上述芯片35是晶体管。
参考图3b,在除用于端子A和B的区域以外的芯片35的上表面上形成绝缘层33。在绝缘层33上形成第一和第二导电层31a和31b。将第一和第二导电层31a和31b分别连接到在芯片35的上表面上形成的端子A和B。按指定距离使第一和第二导电层31a和31b彼此分开。另外,在芯片35的下表面上形成第三导电层31c,并电连接到形成在芯片35的下表面上的端子(未示出)。
优选地,第一、第二和第三导电层31a、31b和31c是用铜(Cu)制成的金属层,但并不局限于此。另外,第一、第二和第三导电层31a、31b和31c的厚度根据印刷电路板的类型而改变。即,由印刷电路板的连接焊盘间的间隔来确定第一、第二和第三导电层31a、31b和31c的厚度。由于在导电层31a、31b和31c的侧面上形成的电极面37a、37b和37c位于印刷电路板的相应连接焊盘上,导电层31a、31b和31c要求足够的厚度。
能用常规电镀方法以预定厚度形成第一、第二和第三导电层31a、31b和31c。然而,使用电镀方法形成第一、第二和第三导电层31a、31b和31c要求很长时间和较高生产成本。因此,优选地,首先通过电镀形成电镀层。然后,在电镀层上堆叠至少一层铜层,从而容易形成具有想要的深度的导电层。
另外,分别在第一和第二导电层31a和31b的一个侧面上形成第一和第二电极面37a和37b。在第三导电层31c的侧面上形成第三电极面37c。具有第一、第二和第三电极面37a、37b和37c的第一、第二和第三导电层31a、31b和31c的侧面均在芯片35的相同侧面上。将第一、第二和第三电极面37a、37b和37c电和机械连接到印刷电路板的相应连接焊盘上。因此,优选地,第一、第二和第三电极面37a、37b和37c是具有良好电导性的包括金(Au)的金属层以随后进行焊接。
在如图3b所示的上述芯片比例封装30中,在除用于包括两个端子A和B的区域以外的芯片35的上表面上形成绝缘层33。在绝缘层33上形成第一和第二导电层31a和31b。在芯片35的下表面上形成第三导电层31c。在这里,将第一和第二导电层31a和31b分别连接到端子A和B。将第三导电层31c连接到形成在芯片35的下表面上的端子(未示出)。分别在形成在芯片35的上表面上的第一和第二导电层31a和31b的侧面和形成在芯片35的下表面上的第三导电层31c的侧面上形成第一、第二和第三电极面37a、37b和37c。具有第一、第二和第三电极面37a、37b和37c的侧面是印刷电路板上的安装面。将芯片比例封装30旋转90度,然后将旋转后的芯片比例封装30安装在印刷电路板上以便将第一、第二和第三电极面37a、37b和37c连接到印刷电路板的相应连接焊盘上。
通过自然氧化在第一、第二和第三导电层31a、31b和31c的外露表面上形成氧化层。这些氧化层充当用于保护第一、第二和第三导电层31a、31b和31c的层,从而确保第一、第二和第三导电层31a、31b和31c的可靠性。然而,为防止第一、第二和第三导电层31a、31b和31c严重氧化,可在除第一、第二和第三电极面37a、37b和37c外的第一、第二和第三导电层31a、31b和31c上形成钝化层37。优选地,钝化层37是通过涂上绝缘树脂形成的绝缘薄膜。如果必要的话,可在芯片35的外露侧面上形成钝化层37。
图4是芯片封装装置50的透视图,其中根据本发明的优选实施例,将芯片比例封装40安装在印刷电路板51上。
如图4所示,芯片封装装置50包括芯片比例封装40和用于安装芯片比例封装40的印刷电路板51。如图3a和3b所示,在芯片比例封装40中,在芯片45的上表面上形成绝缘层43。在绝缘层43的上表面上形成第一和第二导电层41a和41b。将第一和第二导电层41a和41b分别连接到形成在芯片45的上表面上的两个端子(未示出)。在芯片45的下表面上形成第三导电层41c。将第三导电层41c连接到形成在芯片45的下表面上的端子(未示出)。在第一、第二和第三导电层41a、41b和41c的指定侧面上形成第一、第二和第三电极面47a、47b和47c。第一、第二和第三电极面47a、47b和47c将是印刷电路板51上芯片比例封装40的安装面。通过第一、第二和第三导电层41a、41b和41c分别将第一、第二和第三电极面47a、47b和47c连接到芯片45的每个相应端子(未示出)。通过将芯片比例封装40布置在芯片比例封装40的第一、第二和第三电极面47a、47b和47c以及通过在第一、第二和第三电极面47a、47b和47c和连接焊盘57a、57b和57c间进行焊接,将芯片比例封装40安装在印刷电路板51上,从而完成制造图4的芯片封装装置50。
经连接到印刷电路板51的连接焊盘57a、57b和57c的芯片比例封装40的第一、第二和第三电极面47a、47b和47c,将在印刷电路板51上形成的指定电路(未示出)连接到芯片45的每个端子上。因此,如上所述,第一、第二和第三导电层41a、41b和41c具有视印刷电路板51的连接焊盘57a、57b和57c间的间隔而定的指定深度。
另外,本发明提供了一种制造上述芯征比例封装的方法。图5a至5f是根据本发明的优选实施例,描述制造芯片比例封装的方法的每个步骤的透视图。
首先,如图5a所示,准备包括多个芯片的晶片105。在每个芯片的上表面和下表面上形成端子。在这里,按晶片105的上表面的虚线划分每个芯片。图5a部分示出了晶片105。然而,对本领域的技术人员来说具有多个芯片的晶片105的整个结构将是显而易见的。
芯片包括分别在其上表面上的两个端子101a和101b以及在其下表面上的一个端子(未示出)。另外,在晶片105的上表面上形成具有多个窗口的掩膜图案106,从而暴露用于晶片105的端子101a和101b的区域。掩膜图案106的窗口与用于晶片105的端子101a和101b的区域相对应。掩膜图案106用氧化层制成。
如图5b所示,在晶片105的上表面上形成绝缘层113。然后,如图5c所示,分别在绝缘层113的上表面和晶片105的下表面上形成上导电层和下导电层121a和121b。在这里,在绝缘层113的上表面上形成上导电层121a以便将上导电层121a连接到晶片105的两个端子101a和101b上。因此,为形成金属层以填充用于端子101a和101b的窗口,优选地通过电镀法形成上导电层121a。然而,如上所述,导电层具有视连接焊盘间的间隔而定的预定厚度以便导电层具有在其上形成电极面的足够尺寸的侧面。因此,最优选地,通过形成电镀层然后在电镀层上堆叠至少一层铜层来形成上导电层,然而填充在其上未形成绝缘层的与端子101a和101b相对应的窗口。然后,沿图5的线Y-Y′将晶片105一次切割成两行芯片。
如图5d所示,通过一次切割晶片105获得切割部分。从而,仅形成每个芯片比例封装的一个侧面。在通过一次切割晶片105获得的芯片封装的侧面的上导电层和下导电层121a和121b的侧面上分别形成上电极面和下电极面137′和137″。通过电镀有选择地在上导电层和下导电层121a和121b的侧面上形成上电极面和下电极面137′和137″。即,不在由硅制成的芯片35的侧面上形成电极面。然而,在由金属制成的上导电层和下导电层121a和121b的侧面上形成第一和第二电极面137′和137″。
沿图5d的线X-X′去除部分上导电层121a,从而将上导电层121a和形成在上导电层121a的侧面上的电极层137′划分成连接到芯片的两个端子上的两部分,如图5e所示。在这里,绝缘层113用来防止芯片受到来自划分上导电层121a的损害。
然后,为将一次切割的晶片105划分为多个封装单元,执行二次切割步骤,从而完成制造多个芯片比例封装140。如图5f所示,可进一步在芯片比例封装140的上导电层和下导电层121a和121b的外露表面上形成钝化层139。钝化层139是用通过涂上绝缘树脂形成的绝缘薄膜制成。钝化层139用来防止上导电层和下导电层121a和121b氧化,从而提高芯片比例封装140的可靠性。如果必要的话,根据芯片比例封装140的工作条件可省略钝化层139。
如图5a至5f所示的制造芯片比例封装的方法是本发明的优选实施例。因此,在本发明的范围和精神范围内可不同地改变制造芯片比例封装的方法。具体来说,根据切割步骤,可大大地改变形成钝化的步骤。
例如,在如图5a至5f所示的本发明的优选实施例中,在二次切割步骤后,通过只涂一次绝缘树脂,在除用于电极面外的导电层的外露表面上形成钝化层。然而,可通过在形成上导电层和下导电层后在上导电层和下导电层上涂上绝缘树脂以及通过在二次切割步骤后在上导电层和下导电层的侧面上涂上绝缘树脂来形成钝化层。由于将具有导电层的晶片的底面固定到胶带(tape)或真空装置上,前者在导电层上形成钝化层方面有困难。然而,在切割步骤前在导电层上形成后者的钝化层,后者解决了该问题。
可同时实现如图5e所示将绝缘层上的上导电层划成为两部分的步骤和如图5f所示的二次切割晶片的步骤。即,通过控制二次切割步骤的刀片可同时执行将上导电层划分成两部分的步骤以及将晶片切割成封装单元的步骤以便刀片的切割深度与导电层的厚度相对应。
根据制造本发明的芯片比例封装的方法,将晶片切割成多个具有一个芯片的芯片比例封装,以及在芯片比例封装的一个侧面的上导电层和下导电层的侧面上形成电极面以及在导电层的其他表面上形成钝化层。因此,可按顺序和方法的不同来改变用于形成芯片比例封装的侧面的每个切割步骤以及用于形成钝化层和电极面的步骤。这些改变和改进均在本发明的范围和精神内。
从上述描述可以看出,本发明通过在具有端子的芯片的上表面和下表面上形成导电层,以及通过在导电层的相同侧面上形成电极面,提供一种小型化和更容易制造的芯片比例封装,从而提高封装的可靠性。另外,本发明提供一种用于制造芯片比例封装的方法,其中省略了常规的引线接合步骤或通孔形成步骤,从而简化制造过程和降低制造成本。
尽管为了说明目的已经公开了本发明的优选实施例,本领域的普通技术人员将意识到在不脱离由附加权利要求公开的本发明的范围和精神的情况下可能做出不同的改变、添加或代替。
Claims (27)
1.一种芯片比例封装,包括:
芯片,包括具有两个第一端子的第一表面以及具有第二端子的第二表面,第二表面与第一表面相对;
绝缘层,形成在除用于两个端子的区域以外的芯片的第一表面上;
第一和第二导电层,形成在绝缘层上并按指定距离使彼此分开以便连接到两个端子的每一个上;
第三导电层,形成在芯片的第二表面上以便连接到芯片的第二表面的端子上;以及
电极面,形成在第一、第二和第三导电层的每个指定侧面上。
2.如权利要求1所述的芯片比例封装,进一步包括钝化层,每个钝化层形成在除具有电极面的侧面以外的第一、第二和第三导电层的外露表面上。
3.如权利要求2所述的芯片比例封装,其中所述钝化层是用通过涂上绝缘树脂形成的绝缘薄膜制成的。
4.如权利要求1所述的芯片比例封装,其中芯片的侧面以及第一、第二和第三导电层的侧面形成一个平面。
5.如权利要求1所述的芯片比例封装,其中第一、第二和第三导电层是包括铜(Cu)的金属层。
6.如权利要求1所述的芯片比例封装,其中电极面是包括金(Au)的金属层。
7.如权利要求1所述的芯片比例封装,其中第一、第二和第三导电层的每一个包括用电镀层制成的第一层以及堆叠在第一层上的用至少一个铜层制成的第二层。
8.如权利要求1所述的芯片比例封装,其中芯片是晶体管。
9.一种芯片比例封装组件,包括:
芯片比例封装,包括:
芯片,包括具有两个第一端子的第一表面以及具有第二端子的第二表面,第二表面与第一表面相对;
绝缘层,形成在除用于两个端子的区域以外的芯片的第一表面上;
第一和第二导电层,形成在绝缘层上并按指定距离使彼此分开以便连接到两个端子的每一个上;
第三导电层,形成在芯片的第二表面上以便连接到芯片的第二表面的端子上;以及
电极面,形成在第一、第二和第三导电层的每个指定侧面上;以及
印刷电路板,包括至少三个连接焊盘以及连接到连接焊盘上的电路图案,
其中将芯片比例封装安装在印刷电路板上以便将芯片的电极面连在印刷电路板的每个连接焊盘上。
10.如权利要求9所述的芯片比例封装组件,进一步包括钝化层,每个钝化层形成在除具有电极面的侧面以外的第一、第二和第三导电层的外露表面上。
11.如权利要求10所述的芯片比例封装组件,其中所述钝化层是用通过涂上绝缘树脂形成的绝缘薄膜制成的。
12.如权利要求9所述的芯片比例封装组件,其中第一、第二和第三导电层是包括铜(Cu)的金属层。
13.如权利要求9所述的芯片比例封装组件,其中电极面是包括金(Au)的金属层。
14.如权利要求9所述的芯片比例封装组件,其中第一、第二和第三导电层的每一个包括用电镀层制成的第一层以及堆叠在第一层上的用至少一个铜层制成的第二层。
15.如权利要求9所述的芯片比例封装组件,其中芯片是晶体管。
16.一种制造芯片比例封装的方法,所述方法包括步骤:
准备包括多个芯片的晶片,所述芯片包括分别在其上表面上的两个端子以及在其下表面上的端子;
在除用于两个端子的区域外的晶片的上表面上形成绝缘层;
在绝缘层上形成上导电层以便连接到芯片的上表面的两个端子的每一个上;
在芯片的下表面上形成下导电层以便连接到芯片的下表面的端子上;
一次切割晶片以便形成芯片比例封装的一个侧面;
在上导电层和下导电层的侧面上形成电极面,所述侧面形成在通过一次切割晶片获得的芯片比例封装的侧面上;
将在绝缘层上形成的上导电层划分成连接到两个端子的每一个上的两个区域;以及
将晶片二次切割成封装单元。
17.如权利要求16所述的制造芯片比例封装的方法,进一步包括步骤:
在形成上导电层和下导电层的步骤后,在上导电层和下导电层的每个上表面和下表面上形成钝化层;以及
在除具有电极面的侧面以外的上导电层和下导电层的每个侧面上形成钝化层。
18.如权利要求16所述的制造芯片比例封装的方法,进一步包括在二次切割晶片的步骤后,形成钝化层的步骤,每个钝化层形成在除具有电极面的侧面以外的第一和第二导电层的外露表面上。
19.如权利要求17或18所述的制造芯片比例封装的方法,其中所述钝化层用通过涂上绝缘树脂形成的绝缘薄膜制成。
20.如权利要求16所述的制造芯片比例封装的方法,其中一次切割晶片的步骤是切割晶片以便将晶片的划线切割成两行的步骤。
21.如权利要求16所述的制造芯片比例封装的方法,其中通过控制切割深度,同时执行将形成在绝缘层上的上导电层划分成两个区域的步骤与将晶片二次切割成封装单元的步骤。
22.如权利要求16所述的制造芯片比例封装的方法,其中通过电镀法形成上导电层和下导电层。
23.如权利要求16所述的制造芯片比例封装的方法,其中导电层是包括铜(Cu)的金属层。
24.如权利要求16所述的制造芯片比例封装的方法,其中电极面是包括金(Au)的金属层。
25.如权利要求16所述的制造芯片比例封装的方法,其中通过形成连接到每个端子的电镀层以及在电镀层上堆叠至少一层铜层来形成每个上导电层和下导电层。
26.如权利要求16所述的制造芯片比例封装的方法,其中通过电镀法形成电极面。
27.如权利要求16所述的制造芯片比例封装的方法,其中芯片是晶体管。
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KR10-2002-0014571A KR100452818B1 (ko) | 2002-03-18 | 2002-03-18 | 칩 패키지 및 그 제조방법 |
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JP (1) | JP3632024B2 (zh) |
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DE (1) | DE10302022B4 (zh) |
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CN104576416A (zh) * | 2013-10-24 | 2015-04-29 | 扬州倍英斯微电子有限公司 | 一种双层凸点二极管芯片制备方法 |
CN109565136A (zh) * | 2016-06-10 | 2019-04-02 | 莫列斯有限公司 | 电子元器件 |
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FI119307B (fi) * | 2005-06-17 | 2008-09-30 | Vti Technologies Oy | Menetelmä mikromekaanisen liikeanturin valmistamiseksi ja mikromekaaninen liikeanturi |
US8053891B2 (en) * | 2008-06-30 | 2011-11-08 | Alpha And Omega Semiconductor Incorporated | Standing chip scale package |
TWI438879B (zh) * | 2009-03-11 | 2014-05-21 | Toshiba Kk | Semiconductor device and manufacturing method thereof |
US8703543B2 (en) * | 2009-07-14 | 2014-04-22 | Honeywell International Inc. | Vertical sensor assembly method |
US20120119345A1 (en) * | 2010-11-15 | 2012-05-17 | Cho Sungwon | Integrated circuit packaging system with device mount and method of manufacture thereof |
US9054063B2 (en) * | 2013-04-05 | 2015-06-09 | Infineon Technologies Ag | High power single-die semiconductor package |
WO2017214370A1 (en) * | 2016-06-10 | 2017-12-14 | Molex, Llc | Electronic component |
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JP3369410B2 (ja) * | 1996-09-02 | 2003-01-20 | 松下電器産業株式会社 | 半導体装置の実装方法 |
JPH10150065A (ja) * | 1996-11-15 | 1998-06-02 | Japan Aviation Electron Ind Ltd | チップサイズパッケージ |
US5994167A (en) * | 1997-05-21 | 1999-11-30 | Zowie Technology Corporation | Method of making a fiberglass reinforced resin plate |
JP3312121B2 (ja) * | 1998-12-09 | 2002-08-05 | シャープ株式会社 | チップ部品型の発光ダイオードの製造方法 |
TW408411B (en) * | 1999-03-31 | 2000-10-11 | Huang Jr Gung | Semiconductor chip scale package |
KR100364926B1 (ko) * | 1999-06-03 | 2002-12-16 | 사단법인 고등기술연구원 연구조합 | 측면 실장이 가능한 저온 동시 소성 세라믹 모듈 및 그 제조 방법 |
KR20010009350A (ko) * | 1999-07-09 | 2001-02-05 | 윤종용 | 기판이 없는 칩 스케일 패키지 및 그 제조방법 |
US6271060B1 (en) * | 1999-09-13 | 2001-08-07 | Vishay Intertechnology, Inc. | Process of fabricating a chip scale surface mount package for semiconductor device |
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2002
- 2002-03-18 KR KR10-2002-0014571A patent/KR100452818B1/ko not_active IP Right Cessation
- 2002-12-27 US US10/329,810 patent/US6841416B2/en not_active Expired - Fee Related
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Cited By (3)
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CN104576416A (zh) * | 2013-10-24 | 2015-04-29 | 扬州倍英斯微电子有限公司 | 一种双层凸点二极管芯片制备方法 |
CN109565136A (zh) * | 2016-06-10 | 2019-04-02 | 莫列斯有限公司 | 电子元器件 |
CN109565136B (zh) * | 2016-06-10 | 2020-10-23 | 莫列斯有限公司 | 电子元器件 |
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US20030176015A1 (en) | 2003-09-18 |
US6841416B2 (en) | 2005-01-11 |
KR20030075385A (ko) | 2003-09-26 |
KR100452818B1 (ko) | 2004-10-15 |
DE10302022B4 (de) | 2008-05-29 |
JP2003273281A (ja) | 2003-09-26 |
DE10302022A1 (de) | 2003-10-16 |
JP3632024B2 (ja) | 2005-03-23 |
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