CN1306332C - Thin film transistor array substrate and repair method thereof - Google Patents

Abstract

A thin film transistor array substrate is mainly composed of a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, a plurality of common wirings and a patterned upper electrode. Wherein, the scanning wires and the data wires are arranged on the substrate to divide a plurality of pixel areas. The thin film transistors are respectively located in each pixel region and driven by the corresponding scan lines and data lines. The pixel electrode is located in each pixel area and is electrically connected with the corresponding thin film transistor. The common lines are disposed on the substrate, and a partial region of each pixel electrode is located above the corresponding common line. The patterned upper electrode comprises a plurality of sub-upper electrodes which are arranged between each pixel electrode and the corresponding common wiring, and the sub-upper electrodes are electrically connected with the pixel electrodes and are suitable for being coupled with the common wiring to form a capacitor. The repairing method is to remove a partial region of the pixel electrode corresponding to the sub-upper electrode in the defective capacitor, so that the sub-upper electrode in the defective capacitor is electrically insulated from the corresponding pixel electrode.

Description

Thin film transistor array substrate and repair method thereof

technical field

The present invention relates to a thin film transistor array substrate (TFT array substrate) and its repair method in a field, in particular to a thin film transistor array substrate capable of avoiding leakage of a storage capacitor and its repair method (THIN FILM TRANSISTOR ARRAY SUBSTRATE AND REPAIRING METHOD THEREOF).

Background technique

The rapid progress of the multimedia society is mostly due to the rapid progress of semiconductor devices or display devices. As far as the display is concerned, the cathode ray tube (Cathode Ray Tube, CRT) has been monopolizing the display market in recent years because of its excellent display quality and economy. However, for the environment where individuals operate most terminals/display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is predicted, cathode ray tubes still have many problems in terms of space utilization and energy consumption, and There is no effective solution to the demands of lightness, thinness, shortness, smallness and low power consumption. Therefore, thin film transistor liquid crystal displays (Thin Film Transistor Liquid Crystal Display, TFT LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market.

A thin film transistor liquid crystal display (TFT LCD) is mainly composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer. The pixel electrode (PixelElectrode) is composed. The thin film transistor is used as a switching element of the liquid crystal display unit. In addition, in order to control individual pixel units, a specific pixel is usually selected through the scan line and the data line (Date line), and the display data corresponding to this pixel is displayed by applying an appropriate operating voltage . In addition, usually part of the above-mentioned pixel electrode area is covered on the scanning wiring or the common wiring (Common line), and the overlapping part is used as a storage capacitor (Cst), so that the thin film transistor liquid crystal display Each pixel can be displayed normally.

It is worth noting that in the prior art, an upper electrode is arranged between each pixel electrode and the corresponding common wiring (or scanning wiring) while making the data wiring, source electrode and drain electrode. , and electrically connect the pixel electrode to the upper electrode, so that the upper electrode, the common wiring (or scanning wiring) and the dielectric layer between the upper electrode and the common wiring (or scanning wiring) are formed A metal-insulator-metal structure (Metal-Insulator-Metal Structure) storage capacitor.

FIG. 1 is a top view of a conventional thin film transistor array substrate, and FIG. 2 is a cross-sectional view of the thin film transistor array substrate according to FIG. 1 along the section line A-A'.

Please refer to FIG. 1 and FIG. 2 together. The conventional thin film transistor array substrate 100 is mainly composed of a substrate 110, a plurality of scanning wirings 120, a plurality of data wirings 130, a plurality of thin film transistors 140, and a plurality of pixel electrodes 150. , a plurality of shared wires 160 (only one of which is shown in this figure), and a plurality of upper electrodes 170 .

Wherein, the scanning wiring 120 and the data wiring 130 are arranged on the substrate 110 to distinguish a plurality of pixel regions 112 . The thin film transistors 140 are respectively located in each pixel area 112 and are driven by the corresponding scan wiring 120 and the corresponding data wiring 130 . The pixel electrodes 150 are respectively located in each pixel area 112 to be electrically connected with the corresponding thin film transistors 140 . The common wiring 160 is disposed on the substrate 110 , and a partial area of each pixel electrode 150 is located above the corresponding common wiring 160 .

In addition, an upper electrode 170 is disposed between each pixel electrode 150 and the corresponding common wiring 160 , and a dielectric layer 180 is disposed between the upper electrode 170 and the corresponding common wiring 160 to maintain electrical isolation. In addition, a dielectric layer 190 is also disposed between the upper electrode 170 and the corresponding pixel electrode 150, and the dielectric layer 190 has a contact window 192, and the upper electrode 170 and the corresponding pixel electrode 150 are electrically connected through the contact window 192. connect.

Please continue to refer to FIG. 2 , since a storage capacitor (Cst) is formed between the upper electrode 170 and the corresponding common wiring 160 to enable each pixel in the thin film transistor liquid crystal display to display normally. However, defects in the process or other factors may cause the particles 10 to fall into the dielectric layer 180 or cause holes in the dielectric layer 180 , resulting in capacitance leakage. In this way, pixels will be displayed abnormally, resulting in poor display quality.

It can be seen that the above-mentioned existing thin film transistor array substrate and its repairing method obviously still have inconveniences and defects in terms of structure, method and use, and need to be further improved. In order to solve the problems existing in thin film transistor array substrates and their repair methods, relevant manufacturers have tried their best to find solutions, but for a long time no suitable design has been developed, and general products have no suitable structure to solve them. The above-mentioned problem is obviously a problem that relevant industry players are eager to solve.

In view of the defects in the above-mentioned existing thin film transistor array substrates and their repair methods, the inventors actively researched and innovated based on years of rich practical experience and professional knowledge in the design and manufacture of such products, and combined with the application of academic theories, in order to create A thin-film transistor array substrate with a novel structure and its repair method can improve the general existing thin-film transistor array substrate and its repair method, making it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.

Contents of the invention

The main purpose of the present invention is to overcome the defects existing in the existing thin film transistor array substrate and its repair method, and provide a new thin film transistor array substrate and its repair method. The technical problem to be solved is to avoid storage capacitor The upper and lower electrodes of the battery leak due to particles.

The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. The present invention proposes a thin film transistor array substrate, which mainly consists of a substrate, multiple scanning wirings, multiple data wirings, multiple thin film transistors, multiple pixel electrodes, multiple shared wirings, and a patterned upper electrode constituted. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors. The common wiring is arranged on the substrate, and a partial area of each pixel electrode is located above the corresponding common wiring. The patterned upper electrode is arranged between each pixel electrode and one of the corresponding common wirings, wherein the patterned upper electrode includes a plurality of sub-upper electrodes, and part of each sub-upper electrode is electrically connected to the corresponding pixel electrode. connect.

To achieve the above purpose, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, and a patterned upper electrode. constitute. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors, and a partial area of each pixel electrode is located above the corresponding scanning wiring. The patterned upper electrode is arranged between each pixel electrode and one of the corresponding scanning lines, wherein the patterned upper electrode includes a plurality of sub-upper electrodes, and a part of each sub-upper electrode is electrically connected to the corresponding pixel electrode. connect.

In order to achieve the above object, the present invention proposes a thin film transistor array substrate, which mainly consists of a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, a plurality of shared wirings, and A patterned upper electrode is formed. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors. The common wiring is arranged on the substrate, and a partial area of each pixel electrode is located above the corresponding common wiring. The patterned upper electrode is arranged between each pixel electrode and the corresponding common wiring. The patterned upper electrode includes a plurality of sub-upper electrodes, wherein the sub-upper electrodes are electrically connected to the pixel electrodes and are suitable for coupling with the common wiring to form Multiple capacitors, when at least one of the capacitors is a defective capacitor, the sub-upper electrodes in the defective capacitors are electrically insulated from the corresponding pixel electrodes, while other sub-upper electrodes are electrically connected to the corresponding pixel electrodes respectively .

To achieve the above purpose, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, and a patterned upper electrode. constitute. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors, and a partial area of each pixel electrode is located above the corresponding scanning wiring. The patterned upper electrode is disposed between each pixel electrode and one of the corresponding scanning wirings, wherein the patterned upper electrode includes a plurality of sub-upper electrodes, wherein the sub-upper electrodes are electrically connected to the pixel electrodes and are suitable for scanning Wiring coupling forms multiple capacitors. When at least one of the capacitors is a defective capacitor, the sub-upper electrodes in the defective capacitors are electrically insulated from the corresponding pixel electrodes, and some areas of other sub-upper electrodes are respectively connected to the corresponding pixel electrodes. electrical connection.

In order to achieve the above purpose, the present invention proposes a method for repairing the thin film transistor array substrate, which is suitable for repairing the above thin film transistor array substrate. When there is a particle/hole, the capacitor formed by it is a defective capacitor. The method for repairing the thin film transistor array substrate includes removing a part of the pixel electrode corresponding to the sub-upper electrode in the defective capacitor, so that the defective capacitor The sub-upper electrodes are electrically insulated from the corresponding pixel electrodes.

In order to achieve the above object, the present invention proposes a thin film transistor array substrate, which mainly consists of a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, a plurality of shared wirings, and Consists of an upper electrode. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors. The common wiring is arranged on the substrate, and a partial area of each pixel electrode is located above the corresponding common wiring. The upper electrode is disposed between each pixel electrode and the corresponding common wiring, wherein the upper electrode is electrically connected to the pixel electrode, and is suitable for coupling with the common wiring to form multiple capacitors, when at least one of the capacitors is a defective capacitor In this case, the upper electrode in the defective capacitor is electrically insulated from the corresponding pixel electrode, and the upper electrode in the defective capacitor is welded to the corresponding common wiring.

To achieve the above purpose, the present invention proposes a thin film transistor array substrate, which is mainly composed of a substrate, multiple scanning lines, multiple data lines, multiple thin film transistors, multiple pixel electrodes, and an upper electrode. Wherein, the scan wiring and the data wiring are arranged on the substrate to distinguish a plurality of pixel areas. The thin film transistors are respectively located in each pixel area, and are driven by corresponding scanning wirings and corresponding data wirings. The pixel electrodes are respectively located in each pixel area to be electrically connected with the corresponding thin film transistors, and a partial area of each pixel electrode is located above the corresponding scanning wiring. The upper electrode is arranged between each pixel electrode and the corresponding scanning wiring, wherein the upper electrode is electrically connected to the pixel electrode, and is suitable for coupling with the scanning wiring to form multiple capacitors, when at least one of the capacitors is a defect When the capacitor is used, the upper electrode in the defective capacitor is electrically insulated from the corresponding pixel electrode, and the upper electrode in the defective capacitor is welded to the corresponding scanning wiring.

In order to achieve the above object, the present invention proposes a method for repairing a thin film transistor array substrate, which is suitable for a thin film transistor array substrate with a storage capacitor on the gate (Cs on gate) or a storage capacitor on the common wiring (Cs on common). For repairing, wherein a partial area of each pixel electrode on the substrate is located above a corresponding scanning wiring or a common wiring, and an upper electrode, and the pixel electrode is electrically connected to the upper electrode. When there is a particle/hole between the upper electrode and the corresponding scanning wiring or common wiring, the capacitance formed by it is a defective capacitance, and this repair method is Partial areas of the pixel electrodes corresponding to the upper electrodes in the defective capacitors are removed first, so that the upper electrodes in the defective capacitors are electrically insulated from the corresponding pixel electrodes. Next, the upper electrode in the defective capacitor is welded to the corresponding scanning wiring or common wiring.

Because the present invention mainly lies in disposing a patterned upper electrode composed of a plurality of sub-upper electrodes between each pixel electrode and the corresponding common wiring (or scanning wiring). When there is a particle between one of the sub-upper electrodes and the corresponding common wiring (or scanning wiring), the capacitance formed by it is a defective capacitor. The partial area of the pixel electrode above the upper electrode electrically insulates the sub-upper electrode in the defective capacitor from the corresponding pixel electrode, so as to avoid the leakage of the upper and lower electrodes of the storage capacitor due to particles or holes.

Compared with the prior art, the present invention has obvious advantages and beneficial effects.

1. The repairing method of the present invention can prevent the upper and lower electrodes of the storage capacitor from leaking due to holes in the particles or the dielectric layer, and has high practicability.

2. In the thin film transistor array substrate of the present invention, the patterned upper electrode can be formed together with the data wiring, drain electrode and source electrode belonging to the second metal layer (M2), so there is no burden on the manufacturing cost .

To sum up, the thin film transistor array substrate with special structure and its repairing method of the present invention overcomes the defects existing in the existing thin film transistor array substrate and its repairing method, and provides a new thin film transistor array substrate and its repairing method, The technical problem to be solved is to prevent the upper and lower electrodes of the storage capacitor from leaking due to particles. It has the above-mentioned many advantages and practical value, and there is no similar structural design and method publicly published or used in similar products and methods, so it is indeed innovative, and it has great advantages no matter in product structure, method or function. Improvement, great progress has been made in technology, and has produced easy-to-use and practical effects, and has improved multiple functions compared with the existing thin-film transistor array substrate and its repair method, so it is more suitable for practical use, and has industrial It is a novel, progressive and practical new design.

The above description is only an overview of the technical solutions of the present invention. In order to understand the technical means of the present invention more clearly and implement them according to the contents of the description, the preferred embodiments of the present invention and accompanying drawings are described in detail below.

Description of drawings

FIG. 1 is a top view of a conventional thin film transistor array substrate.

FIG. 2 is a cross-sectional view of the thin film transistor array substrate along the section line A-A' according to FIG. 1 .

FIG. 3 is a schematic diagram of a thin film transistor array substrate according to a preferred embodiment of the present invention.

FIG. 4 is a cross-sectional view of the thin film transistor array substrate along the section line B-B' according to FIG. 3 .

FIG. 5 is a schematic diagram of the thin film transistor array substrate in FIG. 3 after laser repair.

FIG. 6 is a schematic cross-sectional view of the thin film transistor array substrate along line C-C′ in FIG. 5 .

FIG. 7 is a schematic diagram of repairing electrically connecting the common wiring with the sub-upper electrode in the defective capacitor according to a preferred embodiment of the present invention.

FIG. 8 is a schematic diagram of repairing particles falling between the pixel electrode and the common wiring according to a preferred embodiment of the present invention.

9A to 9D are schematic diagrams of a thin film transistor array substrate according to another preferred embodiment of the present invention.

FIG. 10 is a schematic diagram of a thin film transistor array substrate according to another preferred embodiment of the present invention.

FIG. 11 is a schematic diagram of the thin film transistor array substrate in FIG. 10 after laser repair.

FIGS. 12 to 13 are schematic diagrams after repairing the thin film transistor array substrate with the structure of the storage capacitor on the scanning wiring by the repairing method of the present invention.

FIGS. 14 to 15 are schematic diagrams after repairing the conventional thin film transistor array substrate by the repairing method of the present invention.

16A-16D are schematic diagrams of forming openings on pixel electrodes of a conventional TFT array substrate.

FIG. 17 is a schematic diagram of a thin film transistor array substrate applied in a structure of a multi-area vertical alignment liquid crystal display according to yet another preferred embodiment of the present invention.

FIG. 18 is a schematic diagram of a repaired thin film transistor array substrate applied to a structure of a multi-area vertical alignment liquid crystal display using the repairing method of the present invention.

10, 20, 30: particles

100, 200, 300: TFT array substrate

110, 210: Substrate

120, 220, 320: scan wiring

130, 230, 330: data wiring

140, 240: thin film transistor

150, 250, 350: pixel electrodes

152, 154, 252, 254, 256: opening

160, 260, 360: shared wiring

170, 370: upper electrode

180, 280: dielectric layer

190, 290: dielectric layer

192, 292, 392: contact window

270: Patterned upper electrode

272: sub-upper electrode

272a: Sub-upper electrode in defective capacitor

352: First Groove

354: second groove

356: Connections

Detailed ways

In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, The method, steps, features and effects thereof are described in detail below.

FIG. 3 is a schematic diagram of a thin film transistor array substrate according to a preferred embodiment of the present invention, and FIG. 4 is a cross-sectional view of the thin film transistor array substrate along the section line B-B' according to FIG. 3 .

3 and 4, the thin film transistor array substrate 200 of this embodiment is mainly composed of a substrate 210, a plurality of scanning lines 220, a plurality of data lines 230, a plurality of thin film transistors 240, and a plurality of pixel electrodes. 250 , a plurality of shared wires 260 (only one is shown in this figure), and a patterned upper electrode 270 .

Wherein, the scanning wiring 220 and the data wiring 230 are arranged on the substrate 210 to distinguish a plurality of pixel areas 212 . The thin film transistors 240 are respectively located in each pixel area 212 and are driven by the corresponding scan wiring 220 and the corresponding data wiring 230 . The pixel electrodes 250 are respectively located in each pixel area 212 to be electrically connected with the corresponding thin film transistors 240 . The common wiring 260 is disposed on the substrate 210 , and a partial area of each pixel electrode 250 is located above the corresponding common wiring 260 .

The patterned upper electrode 270 is disposed between each pixel electrode 250 and the corresponding common wiring 260, and a dielectric layer 280 is disposed between the patterned upper electrode 270 and the common wiring 260, and the patterned upper electrode 270 and the pixel A dielectric layer 290 is disposed between the electrodes 250 . It is worth noting that the patterned upper electrode 270 is composed of a plurality of sub-upper electrodes 272 (two are taken as an example in this figure), and a part of each sub-upper electrode 272 is electrically connected to the corresponding pixel electrode 250 For example, a contact window 292 is opened on the dielectric layer 290 above each sub-upper electrode 272, and each sub-upper electrode 272 is electrically connected to the corresponding pixel electrode 250 through the contact window 292, so the sub-upper electrode 272 and A storage capacitor (Cst) is formed between the corresponding common wires 260 .

5 is a schematic diagram of the TFT array substrate in FIG. 3 after laser repair, and FIG. 6 is a schematic cross-sectional diagram of the TFT array substrate in FIG. 5 along the line C-C'.

Please refer to FIG. 5 and FIG. 6 together. When there is a particle 20 (or hole) between one of the above-mentioned sub-upper electrodes 272 and the corresponding common wiring 260, between the sub-upper electrode 272a and the common wiring 260 Leakage can occur. In this way, pixels will be displayed abnormally, resulting in poor display quality. At this time, it is necessary to repair the above-mentioned pixels with abnormal display. The repair method is mainly to remove the part of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor, so that the sub-upper electrode 272a in the defective capacitor can be repaired. The electrode 272 a is electrically insulated from the corresponding pixel electrode 250 .

In this embodiment, for example, a part of the region corresponding to the pixel electrode 250 above the sub-upper electrode 272a in the defective capacitor is removed to form an opening 252, and the removal method is, for example, laser removal. , and the opening 252 is located around the area where the sub-upper electrode 272a in the defective capacitor contacts the corresponding pixel electrode 250 (that is, around the contact window 292), and the sub-upper electrode 272a in the defective capacitor is connected to the corresponding pixel electrode 250 through the opening 252. The pixel electrodes 250 are electrically insulated. It can be known from the above that the repaired pixel electrode 250 can still display normally and will not be affected by the repairing process.

FIG. 7 is a schematic diagram of repairing electrically connecting the common wiring with the sub-upper electrode in the defective capacitor according to a preferred embodiment of the present invention. After removing the partial area of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor, so that the sub-upper electrode 272a in the defective capacitor is electrically insulated from the corresponding pixel electrode 250, the sub-upper electrode 272a in the defective capacitor can be further electrically insulated The upper electrode 272a is welded to the corresponding common wiring 260 (as indicated by A), so that the sub-upper electrode 272a in the defective capacitor is at the same potential as the corresponding common wiring 260, so as to avoid leakage due to particles (or holes) In the case of the above-mentioned welding method, for example, laser welding is used.

Based on the above, according to the present embodiment, the position where the sub-upper electrode 272 a of the defective capacitor is welded to the corresponding common wiring 260 is located below the contact window 292 . However, those skilled in the art should know that the position of welding need not be limited to the bottom of the contact window 292, and it can be any suitable position convenient for welding the sub-upper electrode 272a and the corresponding common wiring 260 in the defective capacitor. .

FIG. 8 is a schematic diagram of repairing particles falling between the pixel electrode and the common wiring according to a preferred embodiment of the present invention. When there is a particle 30 (or a hole) between the pixel electrode and the corresponding common wiring, the repairing method of the present invention can further remove the area corresponding to the pixel electrode 250 above the particle 30 (or hole). In this embodiment, for example, an opening 254 is formed by laser removal, and the opening 254 exposes the particles 30 (or holes).

9A to 9D are schematic diagrams of a thin film transistor array substrate according to another preferred embodiment of the present invention. The main structure of the thin film transistor array substrate in this embodiment is roughly the same as that disclosed in FIG. At the same time, one opening 256 or multiple openings 256 can be opened on each pixel electrode 250 , and the openings 256 are located around the contact area between each sub-contact pad 272 and the corresponding pixel electrode 250 . For example, a straight strip opening 256 (as shown in FIG. 9A ), two straight strip openings 256 (as shown in FIG. 9B ), or an L-shaped opening 256 (as shown in FIG. 9B ) are formed on the pixel electrode 250 corresponding to each sub-contact pad 272 . 9C) or a U-shaped opening 256 (as shown in Figure 9D). Since the opening 256 is first formed on the pixel electrode 250, when there are particles (or holes) between one of the upper sub-electrodes 272 and the corresponding common wiring 260, the pixel electrode 250 can be partially removed , connect the two ends of the opening 256 to form the opening 256 as the opening 252 surrounding the contact window 292 in FIG. 5 . In this embodiment, a method of removing a part of the pixel electrode 250 is, for example, using a laser to remove.

In addition, please continue to refer to FIG. 9A to FIG. 9D , a part of the opening 256 disclosed in the figures is designed above the sub-upper electrode 272 , and the rest is designed in the area outside the sub-upper electrode 272 . In other words, the covering area of the opening 256 is designed to exceed the upper electrode 272, so that the repair process can be faster and easier. Of course, those skilled in the art should know that the size of the opening 256 in the present invention need not be limited.

FIG. 10 is a schematic diagram of a TFT array substrate according to another preferred embodiment of the present invention, and FIG. 11 is a schematic diagram of the TFT array substrate in FIG. 10 after laser repair.

The main structure of the TFT array substrate in this embodiment is roughly the same as that disclosed in FIG. 3 , and only the differences will be described here. The differences in this embodiment are mainly under each pixel electrode 250 Each of the sub-upper electrodes 272 is further connected by a constricted part 274, and the constricted part 274 is used as a cutting area during repairing.

When there is a particle 20 (or hole) between one sub-upper electrode 272 and the corresponding common wiring 260 , leakage will occur between the sub-upper electrode 272 a and the common wiring 260 . At this time, the repairing method is to firstly remove the partial area of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor. Next, cut off the neck portion 274 connected to the sub-upper electrode 272 a in the defective capacitor, so that the sub-upper electrode 272 a in the defective capacitor is electrically insulated from the corresponding pixel electrode 250 . In this embodiment, a part of the pixel electrode 250 is removed to form an opening 252, and the opening 252 is located around the contact area between the sub-upper electrode 272a and the pixel electrode 250 in the defect capacitor, and the pixel electrode 250 is removed. The method of partial area is, for example, laser removal, and the method of cutting the constricted part 274 is, for example, laser cutting. It can be known from the above that after cutting off the neck portion 274 connected to the sub-upper electrode 272a in the defective capacitor, the sub-upper electrode 272a in the defective capacitor is electrically insulated from the corresponding pixel electrode 250, thereby achieving the purpose of repairing.

Based on the above, the above-mentioned embodiments are all exemplified for the structure of the storage capacitor on the shared wiring (Cs on common), but anyone familiar with this technology should know that the repair method of the present invention is not limited to the storage capacitor on the common wiring. The structure on the shared wiring can also be applied to the structure of the storage capacitor on the scan wiring (Cs on Gate).

FIGS. 12 to 13 are schematic diagrams after repairing the thin film transistor array substrate with the structure of the storage capacitor on the scanning wiring by the repairing method of the present invention. The thin-film transistor array substrates in Figure 12 and Figure 13 are thin-film transistor array substrates with storage capacitors on the scanning wiring (Cs on Gate), and its main structure is roughly the same as that in Figure 5, so only technical differences will be described in detail. described as follows.

Please refer to FIG. 12 , in the structure of the scanning wiring of the storage capacitor in this embodiment, a part of each pixel electrode 250 extends above the corresponding scanning wiring 220, and a patterned upper electrode 270 is arranged on each pixel. Between the electrodes and the corresponding scanning lines 220 , the patterned upper electrode 270 includes a plurality of sub-upper electrodes 272 , and the storage capacitor in each pixel is formed by the sub-upper electrodes 272 and the scanning lines 220 below them.

Please refer to FIG. 13 , the patterned upper electrode 270 is also arranged between each pixel electrode and the corresponding scanning wiring 220, and the patterned upper electrode 270 includes a plurality of sub-upper electrodes 272, and each sub-electrode 272 under each pixel electrode 250 The sub-upper electrodes 272 are further connected by a constricted part 274, and the constricted part 274 is used as a cutting area during repairing.

Inevitably, when there is a particle 20 or a hole between one of the sub-upper electrodes 272 and the corresponding scanning wiring 220, leakage will occur between the sub-upper electrode 272a and the common wiring 260. situation. At this point, it is necessary to repair the above-mentioned pixels with abnormal display, and the repair method is mainly to remove the part of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor, so that the sub-electrode 272a in the defective capacitor can be repaired. The upper electrode 272a is electrically insulated from the corresponding pixel electrode 250 .

Please refer to FIG. 12 , in this embodiment, the repair method is to remove a part of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor to form an opening 252 as in the previous embodiment, by The opening 252 electrically insulates the sub-upper electrode 272 a in the defective capacitor from the corresponding pixel electrode 250 . In this embodiment, the method of removing a part of the pixel electrode 250 is, for example, laser removal.

Please refer to FIG. 13. In this embodiment, the repairing method includes removing a part of the pixel electrode 250 corresponding to the sub-upper electrode 272a in the defective capacitor to form an opening 252 as in the previous embodiment. Cut off the constricted portion 274 connected to the sub-upper electrode 272a in the defective capacitor, so that the sub-upper electrode 272a in the defective capacitor is electrically insulated from the corresponding pixel electrode 250, and the method of removing a part of the pixel electrode 250 is, for example, The method of laser removing and cutting the constricted portion 274 is, for example, laser cutting.

Based on the above, after removing the partial area of the pixel electrode corresponding to the sub-upper electrode in the defective capacitor, the sub-upper electrode in the defective capacitor can be electrically connected to the corresponding scanning wiring, for example, by laser welding . Similarly, if there is a particle (or hole) between the pixel electrode and its corresponding scanning wiring, the region corresponding to the pixel electrode above the particle (or hole) can be removed by laser removal. Moreover, while forming the pixel electrodes, one or more openings as disclosed in the above-mentioned FIGS. 9A-9D can be opened on each pixel electrode, so as to facilitate subsequent laser repairing operations.

It is worth noting that the repairing method of the present invention can not only repair the thin film transistor array substrate with patterned upper electrode, but also repair the thin film transistor array substrate with only a single upper electrode.

14 to 15 are schematic diagrams after repairing a conventional thin film transistor array substrate by the repairing method of the present invention. Please refer to FIGS. 14-15 , the conventional thin film transistor array substrate 100 mainly arranges a single upper electrode 170 between each pixel electrode 150 and the corresponding common wiring 160 , when any upper electrode 170 and the corresponding common wiring 160 When there is a particle 10 (or hole) between them, the repairing method of the present invention can also be used for repairing. The repairing method of this embodiment mainly removes the part of the pixel electrode 150 corresponding to the upper electrode 170 a in the defective capacitor, so that the upper electrode 170 a in the defective capacitor is electrically insulated from the corresponding pixel electrode 150 . Then, the upper electrode 170a in the defective capacitor is welded to the corresponding common wiring 160. Of course, those skilled in the art can decide whether to connect the upper electrode 170a in the defective capacitor to the corresponding common wiring according to the leakage situation in the defective capacitor. The wiring 160 is welded.

In this embodiment, for example, a portion of the pixel electrode 150 corresponding to the upper electrode 170a in the defective capacitor is removed to form an opening 152, and the removal method is, for example, laser removal. And this opening 152 is located around the area where the upper electrode 170a in the defective capacitor contacts the corresponding pixel electrode 150 (that is, around the contact window 192), and the upper electrode 170a in the defective capacitor is connected to the corresponding pixel electrode through the opening 152. 150 electrical insulation. Next, for example, the upper electrode 170a in the defective capacitor is welded to the corresponding common wiring 160 by means of laser welding (as indicated at B), so that the upper electrode 170a in the defective capacitor and the corresponding common wiring 160 become Equipotential.

Of course, when there is a particle or a hole (not shown) between the pixel electrode 150 and the corresponding common wiring 160, the pixel electrode 150 above the particle or hole can be removed by laser removal. area.

In addition, please refer to FIGS. 16A-16D , which are schematic views of forming openings on pixel electrodes of a conventional thin film transistor array substrate. In order to make the repairing process faster and easier, when forming the pixel electrode 150 on the conventional thin film transistor array substrate, one or more openings 154 can also be opened at the same time, such as a straight strip opening 154 (as shown in FIG. 16A ), two A straight opening 154 (as shown in FIG. 16B ), or an L-shaped opening 154 (as shown in FIG. 16C ) or a U-shaped opening 154 (as shown in FIG. 16D ), these openings 154 are the same as the openings disclosed in the aforementioned FIGS. 9A-9D , I won't go into details here.

It can be seen from the above that the conventional thin film transistor array substrate 100 is originally electrically connected to the corresponding pixel electrode 150 through a single upper electrode 170, and forms a metal-insulation-metal structure (Metal-insulation-metal structure) with the corresponding common wiring 160. Insulator-Metal Structure), and when there are particles 10 (or holes) between any upper electrode 170 (such as the upper electrode 170a) and the corresponding common wiring 160, this embodiment can be removed and defective The partial area of the pixel electrode 150 corresponding to the upper electrode 170a in the capacitor, so that the upper electrode 170a in the defective capacitor is electrically insulated from the corresponding pixel electrode 150, and the upper electrode 170a in the defective capacitor is connected to the corresponding common wiring The method of 160-phase welding makes the pixel electrode 150 and the upper electrode 170a of the defect capacitor form a metal-insulator-pixel electrode structure (Metal-Insulator-ITO Structure) storage capacitor, thereby achieving the purpose of repair.

It should be noted that the thin film transistor array substrate 100 in FIGS. 14-15 is illustrated as an example of a substrate with storage capacitors on a common wiring (Cs on common). Certainly, those who are familiar with this technology should know that the repairing method of the present invention can also be applied to the conventional substrate with the storage capacitor on the gate (Cs on gate), which will not be repeated here.

In addition, based on the above concept, those skilled in the art should know that the thin film transistor array substrate of the present invention can be applied to a Multi-domain Vertical Alignment liquid crystal display (MVA-LCD). This kind of liquid crystal display is mainly to form a plurality of grooves (slits) in the pixel electrodes, so that the direction of the electric field between the two substrates is changed, and the liquid crystal between the two substrates can be arranged in a multi-region average manner, thereby achieving liquid crystal display. Wide viewing angle purpose of the panel.

Please refer to FIG. 17 , which is a schematic diagram of a thin film transistor array substrate applied to a structure of a multi-area vertical alignment liquid crystal display according to another preferred embodiment of the present invention. The main structure of the thin film transistor array substrate 300 of this embodiment is substantially the same as that of the conventional thin film transistor array substrate disclosed in FIG. 1 , and only the differences will be described below.

Each pixel electrode 350 of the thin film transistor array substrate 300 has at least one first groove 352 and at least one second groove 354, the extending direction of the first groove 352 is different from the extending direction of the second groove 354, and For example, it is different from the extending direction of the scan wiring 320 , the data wiring 330 or the common wiring 360 . In addition, while forming the first trench 352 and the second trench 354, one of the first trenches 352 is connected to a corresponding second trench 354, and the upper electrode 370 is connected to the corresponding pixel electrode 350. The connection point (that is, the contact window 392 ) is, for example, adjacent to the connection point 356 between the first trench 352 and the second trench 354 , and the upper electrode 370 is suitable for coupling with the corresponding common wiring 360 to form a capacitor.

It is worth noting that when there is a particle or a hole between the upper electrode 370 and the corresponding common wiring 360 so that the storage capacitor formed by the common wiring 360 of the upper electrode 370 becomes a defective capacitor, it needs to be repaired. Please refer to FIG. 18 , which is a schematic diagram of a repaired thin film transistor array substrate applied to a structure of a multi-area vertical alignment liquid crystal display using the repairing method of the present invention. The repairing method is to first remove a part of the pixel electrode 350 corresponding to the upper electrode 370 in the defective capacitor, which is the electrical connection between the upper electrode 370 and the corresponding pixel electrode 350 in this embodiment ( That is, the surroundings of the contact window 392 ) are used to electrically insulate the upper electrode 370 in the defective capacitor from the corresponding pixel electrode 350 . In other words, the upper electrode 370 in the defective capacitor is electrically insulated from the corresponding pixel electrode 350 by removing a part of the pixel electrode 350 covering the upper electrode 370 with a smaller area (ie, around the contact window 392 ). . Since in this embodiment, a small area of the pixel electrode 350 covering the upper electrode 370 is removed, a large capacitance value can still be maintained after repairing.

Next, the upper electrode 370 in the defective capacitor and the corresponding common wiring 360 can be welded together, so that the upper electrode 370 in the defective capacitor and the corresponding common wiring 360 become equipotential. Similarly, those skilled in the art can decide whether to weld the upper electrode 370 in the defective capacitor to the corresponding common wiring 360 according to the leakage in the defective capacitor.

Based on the above, originally a single upper electrode 370 is electrically connected to the corresponding pixel electrode 350, and forms a metal-insulation-metal structure (MIM Structure) storage capacitor with the corresponding common wiring 360. When there is a particle or hole between the electrode 370 and the corresponding common wiring 360 so that the storage capacitance formed by the upper electrode 370 and the common wiring 360 becomes a defective capacitance, remove the pixel electrode 350 around the contact window 392 to The upper electrode 370 is electrically insulated from the pixel electrode 350, and a metal-insulation-pixel electrode structure (MII Structure) storage capacitor is formed between the pixel electrode 350 and the upper electrode 370 of the defect capacitor, thereby achieving the purpose of repair.

Of course, in the thin film transistor array substrate 300 in this embodiment, when there is a particle or a hole between the above-mentioned pixel electrode 350 and the corresponding common wiring 360, the repair method of the present invention can also remove the corresponding particle or hole. The pixel electrode 350 above the hole, so that the particles or holes are electrically insulated from the pixel electrode 350 .

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the method and technical content disclosed above to make some changes or modifications to equivalent embodiments with equivalent changes, but any content that does not depart from the technical solution of the present invention, Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims (58)

1. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; a plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected to one of the corresponding thin film transistors; A plurality of common wirings are arranged on the substrate, and a partial area of each of the pixel electrodes is located above one of the corresponding common wirings; and A patterned upper electrode is arranged between each of the pixel electrodes and one of the common wirings, wherein the patterned upper electrode includes a plurality of sub-upper electrodes, and a partial area of each of the sub-upper electrodes is and are respectively electrically connected to one of the corresponding pixel electrodes. 2. The method for repairing a TFT array substrate according to claim 1, wherein the patterned upper electrode further comprises a plurality of constricted portions, each of which is connected to the sub-upper electrodes between the two. 3. The method for repairing a thin film transistor array substrate according to claim 2 or 3, wherein one of the pixel electrodes further includes at least one opening, and the opening is located in a partial area of each of the sub-upper electrodes around. 4 . The method for repairing a thin film transistor array substrate according to claim 3 , wherein the shape of the opening includes straight, L-shaped or U-shaped. 5. The method for repairing a thin film transistor array substrate according to claim 3, wherein a part of the opening is located above each of the sub-upper electrodes, and the rest of the opening is located above each of the sub-upper electrodes outside the area. 6. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; A plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected with one of the corresponding thin film transistors, and each of the pixel electrodes is located in a partial area of the corresponding above one of the scan wires; and A patterned upper electrode is disposed between each of the pixel electrodes and one of the scanning wirings, wherein the patterned upper electrode includes a plurality of sub-upper electrodes, and a partial area of each of the sub-upper electrodes is They are respectively electrically connected to one of the corresponding pixel electrodes. 7. The method for repairing a TFT array substrate according to claim 6, wherein the patterned upper electrode further comprises a plurality of constricted portions, each of which is connected to the sub-upper electrodes between the two. 8. The method for repairing a thin film transistor array substrate according to claim 6 or 7, wherein one of the pixel electrodes further includes at least one opening, and the opening is located in a partial area of each of the sub-upper electrodes around. 9 . The method for repairing a thin film transistor array substrate according to claim 8 , wherein the shape of the opening includes straight, L-shaped or U-shaped. 10. The method for repairing a thin film transistor array substrate according to claim 8, wherein a part of the opening is located above each of the sub-upper electrodes, and the rest of the opening is located above each of the sub-upper electrodes outside the area. 11. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; a plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions, so as to be electrically connected with one of the corresponding thin film transistors; A plurality of common wirings are arranged on the substrate, and a partial area of each of the pixel electrodes is located above one of the corresponding common wirings; and A patterned upper electrode, arranged between each of the pixel electrodes and one of the common wirings, the patterned upper electrode includes a plurality of sub-upper electrodes, wherein the sub-upper electrodes are electrically connected to the pixel electrodes and is suitable for coupling with one of the shared wirings to form a plurality of capacitors. When at least one of the capacitors is a defective capacitor, the sub-upper electrode in the defective capacitor is connected to one of the corresponding pixel electrodes. One is electrically insulated, and some regions of the other sub-upper electrodes are respectively electrically connected to one of the corresponding pixel electrodes. 12 . The method for repairing a thin film transistor array substrate according to claim 11 , wherein the sub-upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 13 . 13. The method for repairing a thin film transistor array substrate according to claim 11 or 12, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the One of the pixel electrodes further includes an opening, and the opening is located above the particle/hole, so that the particle/hole is electrically insulated from one of the pixel electrodes. 14. The method for repairing a thin film transistor array substrate according to claim 11, wherein the patterned upper electrode further comprises a plurality of constricted portions, each of which is connected to a sub-circuit in the defective capacitor. Between two of the sub-upper electrodes other than the upper electrode. 15 . The method for repairing a thin film transistor array substrate according to claim 14 , wherein the sub-upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 16 . 16. The method for repairing a thin film transistor array substrate according to claim 14 or 15, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the One of the pixel electrodes further includes an opening, and the opening is located above the particle/hole, so that the particle/hole is electrically insulated from one of the pixel electrodes. 17. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; A plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected to one of the corresponding thin film transistors, and a partial area of each of the pixel electrodes is located in the corresponding above one of the scanning wires; and A patterned upper electrode, arranged between each of the pixel electrodes and one of the scanning wirings, the patterned upper electrode includes a plurality of sub-upper electrodes, wherein the sub-upper electrodes are electrically connected to the pixel electrodes and is suitable for coupling with one of the scanning wirings to form a plurality of capacitors. When at least one of the capacitors is a defective capacitor, the defective upper electrode is connected to one of the corresponding pixel electrodes. One is electrically insulated, and some regions of the other sub-upper electrodes are respectively electrically connected to one of the corresponding pixel electrodes. 18 . The method for repairing a thin film transistor array substrate according to claim 17 , wherein the sub-upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 19 . 19. The method for repairing a thin film transistor array substrate according to claim 17 or 18, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the One of the pixel electrodes further includes an opening, and the opening is located above the particle/hole, so that the particle/hole is electrically insulated from one of the pixel electrodes. 20. The method for repairing a thin film transistor array substrate according to claim 17, wherein the patterned upper electrode further comprises a plurality of constricted portions, each of which is connected to a sub-circuit in the defective capacitor. Between two of the sub-upper electrodes other than the upper electrode. 21. The repairing method of thin film transistor array substrate according to claim 20, it is characterized in that Wherein the sub-upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 22. The method for repairing a thin film transistor array substrate according to claim 20 or 21, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the One of the pixel electrodes further includes an opening, and the opening is located above the particle/hole, so that the particle/hole is electrically insulated from one of the pixel electrodes. 23. A method for repairing a thin film transistor array substrate, suitable for repairing the thin film transistor array substrate according to claim 1 or 6, characterized in that when one of the sub-upper electrodes and one of the corresponding common wirings One or when there is a first particle/hole between one of the scanning wires, the capacitance formed is a defective capacitance, and the repair method includes: A partial area of one of the pixel electrodes corresponding to the sub-upper electrode in the defective capacitor is removed, so that the sub-upper electrode in the defective capacitor is electrically insulated from the corresponding one of the pixel electrodes. 24. The method for repairing a thin film transistor array substrate according to claim 23, wherein the method of removing a partial area of one of the pixel electrodes corresponding to the sub-upper electrode in the defective capacitor comprises laser removal . 25. The method for repairing a thin film transistor array substrate according to claim 23, wherein after removing a partial area of one of the pixel electrodes corresponding to the sub-upper electrode in the defective capacitor, the repair method Also includes: The sub-upper electrode in the defective capacitor is welded to the corresponding one of the common wirings or one of the scanning wirings. 26. The method for repairing a thin film transistor array substrate according to claim 25, wherein the sub-upper electrode in the defective capacitor is connected to one of the corresponding common wirings or one of the scanning wirings Methods of welding include laser welding. 27. The method for repairing a thin film transistor array substrate according to claim 23 or 25, wherein when one of the pixel electrodes corresponds to one of the common wirings or one of the scanning wirings When there is a second particle/hole between one, the repairing method further includes: A region corresponding to one of the pixel electrodes above the second particle/hole is removed, so that the second particle/hole is electrically insulated from one of the pixel electrodes. 28. The method for repairing a thin film transistor array substrate according to claim 27, wherein the method of removing the area corresponding to one of the pixel electrodes above the second particle/hole comprises laser removal. 29. A method for repairing a thin film transistor array substrate, suitable for repairing the thin film transistor array substrate according to claim 2 or 7, characterized in that when one of the sub-upper electrodes and one of the corresponding common wirings One or when there is a first particle/hole between one of the scanning wires, the capacitance formed is a defective capacitance, and the repairing method includes: removing a partial area of one of the pixel electrodes corresponding to the sub-upper electrode in the defective capacitor; and Cutting off the constricted portion connected to the sub-upper electrode in the defective capacitor, so as to electrically insulate the sub-upper electrode in the defective capacitor from the corresponding one of the pixel electrodes. 30. The method for repairing a thin film transistor array substrate according to claim 29, wherein the method of removing a partial area of one of the pixel electrodes corresponding to the sub-upper electrode in the defective capacitor comprises laser removal. 31. The method for repairing a thin film transistor array substrate according to claim 29, wherein the method of cutting off the constricted portion connected to the sub-upper electrode in the defective capacitor comprises laser cutting. 32. The method for repairing a thin film transistor array substrate according to claim 29, wherein after cutting off the constriction connected to the sub-upper electrode in the defective capacitor, the repair method further comprises: The sub-upper electrode in the defective capacitor is welded to the corresponding one of the common wirings or one of the scanning wirings. 33. The method for repairing a thin film transistor array substrate according to claim 32, wherein the sub-upper electrode in the defective capacitor is connected to one of the corresponding common wirings or one of the scanning wirings Methods of welding include laser welding. 34. The method for repairing a thin film transistor array substrate according to claim 29 or 32, wherein when one of the pixel electrodes and one of the corresponding common wirings or one of the scanning wirings When there is a second particle/hole between one, the repairing method further includes: A region corresponding to one of the pixel electrodes above the second particle/hole is removed, so that the second particle/hole is electrically insulated from one of the pixel electrodes. 35. The method for repairing a thin film transistor array substrate according to claim 34, wherein the method of removing the region corresponding to one of the pixel electrodes above the second particle/hole comprises laser removal. 36. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; a plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions, so as to be electrically connected with one of the corresponding thin film transistors; A plurality of common wirings are arranged on the substrate, and a partial area of each of the pixel electrodes is located above one of the corresponding common wirings; and An upper electrode is disposed between each of the pixel electrodes and one of the common wirings, wherein the upper electrode is electrically connected to one of the pixel electrodes and is suitable for connecting with the common wirings One of them is coupled to form a capacitor. When the capacitor is a defective capacitor, the upper electrode in the defective capacitor is electrically insulated from the corresponding one of the pixel electrodes. 37. The method for repairing a TFT array substrate according to claim 36, wherein the upper electrode of the defective capacitor is welded to one of the corresponding common wirings. 38. The method for repairing a thin film transistor array substrate according to claim 36, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the pixels One of the electrodes further includes an opening, and the opening is located above the particle/hole so as to electrically insulate the particle/hole from one of the pixel electrodes. 39. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; A plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected to one of the corresponding thin film transistors, and a partial area of each of the pixel electrodes is located in the corresponding above one of the scan wires; and An upper electrode is disposed between each of the pixel electrodes and one of the scanning wirings, wherein the upper electrode is electrically connected to one of the pixel electrodes and is suitable for connecting with the common wiring One of them is coupled to form a capacitor. When the capacitor is a defective capacitor, the upper electrode in the defective capacitor is electrically insulated from the corresponding one of the pixel electrodes. 40. The method for repairing a thin film transistor array substrate according to claim 39, wherein the upper electrode of the defective capacitor is welded to one of the corresponding scanning wires. 41. The method for repairing a thin film transistor array substrate according to claim 39, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the pixels One of the electrodes further includes an opening, and the opening is located above the particle/hole so as to electrically insulate the particle/hole from one of the pixel electrodes. 42. A method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate with a storage capacitor on the gate or a storage capacitor on a common wiring, wherein each pixel electrode on the substrate A part of the area is located above a corresponding scanning wiring or a common wiring, an upper electrode is disposed between the pixel electrode and the corresponding scanning wiring or the common wiring, and the pixel electrode and the upper electrode are electrically connected to each other. When there is a first particle/hole between the upper electrode and the corresponding scanning wiring or the common wiring, the capacitance formed is a defective capacitance, and the repairing method includes: A part of the pixel electrode corresponding to the upper electrode in the defective capacitor is removed, so that the upper electrode in the defective capacitor is electrically insulated from the corresponding pixel electrode. 43. The method for repairing a thin film transistor array substrate according to claim 42, wherein after removing the part of the pixel electrode corresponding to the upper electrode in the defective capacitor, the repair method further comprises: The upper electrode in the defective capacitor is welded to the corresponding one of the scanning wirings or one of the common wirings. 44. The method for repairing a thin film transistor array substrate according to claim 42, wherein the method of removing the partial area of the pixel electrode corresponding to the upper electrode in the defective capacitor comprises laser removal. 45. The method for repairing a thin film transistor array substrate according to claim 43, wherein the upper electrode in the defective capacitor is welded to the corresponding one of the scanning wiring or one of the common wiring Methods include laser welding. 46. The method for repairing a thin film transistor array substrate according to claim 42 or 43, wherein when there is a second particle/hole between the pixel electrode and the common wiring or scanning wiring, the repair The method further includes: A region corresponding to the pixel electrode above the second particle/hole is removed to electrically insulate the second particle from the pixel electrode. 47. The method for repairing a thin film transistor array substrate according to claim 46, wherein the method of removing the region corresponding to the pixel electrode above the second particle/hole comprises laser removal. 48. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; A plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected to one of the corresponding thin film transistors, wherein each of the pixel electrodes has at least one first groove a groove and at least one second groove, the extending direction of the first groove is different from the extending direction of the second groove, and the first groove communicates with the second groove; A plurality of common wirings are arranged on the substrate, a partial area of each of the pixel electrodes is located above one of the corresponding common wirings, and the first groove of each of the pixel electrodes is connected to the The connected part of the second trench is located above the corresponding one of the shared wirings; and An upper electrode is disposed between each of the pixel electrodes and one of the common wirings, and a part of each of the upper electrodes is electrically connected to the corresponding one of the pixel electrodes. 49. The method for repairing a thin film transistor array substrate according to claim 48, wherein the connection between the first groove and the second groove of each of the pixel electrodes is adjacent to each of the upper The electrode is electrically connected to one of the corresponding pixel electrodes. 50. A thin film transistor array substrate, characterized in that it comprises: a substrate; A plurality of scanning wirings are arranged on the substrate; A plurality of data wirings are arranged on the substrate, wherein the scanning wirings and the data wirings are used to distinguish a plurality of pixel areas; a plurality of thin film transistors, each of the thin film transistors is located in one of the pixel areas, wherein the thin film transistors are driven by the scanning lines; A plurality of pixel electrodes, each of the pixel electrodes is located in one of the pixel regions to be electrically connected to one of the corresponding thin film transistors, wherein each of the pixel electrodes has at least one first groove a groove and at least one second groove, the extending direction of the first groove is different from the extending direction of the second groove, and the first groove communicates with the second groove; A plurality of common wirings are arranged on the substrate, a partial area of each of the pixel electrodes is located above one of the corresponding common wirings, and the first groove of each of the pixel electrodes is connected to the The connected part of the second trench is located above the corresponding one of the shared wirings; and An upper electrode is disposed between each of the pixel electrodes and one of the common wirings, and a part of the upper electrode is electrically connected to one of the corresponding pixel electrodes, and is suitable for connecting with One of the common lines is coupled to form a capacitor. When the capacitor is a defective capacitor, the upper electrode in the defective capacitor is electrically insulated from a part of the corresponding one of the pixel electrodes. 51. The method for repairing a thin film transistor array substrate according to claim 50, wherein the upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 52. The method for repairing a thin film transistor array substrate according to claim 50, wherein when there is a particle/hole between each of the pixel electrodes and one of the common wirings, the pixel electrodes One of them further includes an opening, and the opening is located above the particle/hole, so that the particle/hole is electrically insulated from one of the pixel electrodes. 53. A method for repairing a thin film transistor array substrate, characterized in that it is suitable for repairing the thin film transistor array substrate according to claim 48, when there is a first electrode between the upper electrode and one of the corresponding common wirings. In the case of particles/holes, the capacitance formed is a defective capacitance, and the repair method includes: removing a part of one of the pixel electrodes corresponding to the upper electrode in the defect capacitor, the part of the region is located at the electrical connection between each of the upper electrodes and the corresponding one of the pixel electrodes around, so that the upper electrode in the defective capacitor is electrically insulated from one of the corresponding pixel electrodes. 54. The method for repairing a thin film transistor array substrate according to claim 53, wherein the method of removing the partial region of one of the pixel electrodes corresponding to the upper electrode in the defective capacitor comprises laser displacement remove. 55. The method for repairing a thin film transistor array substrate according to claim 53, wherein after removing the partial area of one of the pixel electrodes corresponding to the upper electrode in the defective capacitor, the repairing The method further includes: The upper electrode in the defective capacitor is welded to one of the corresponding common wirings. 56. The method for repairing a thin film transistor array substrate according to claim 55, wherein the method of welding the upper electrode of the defective capacitor to one of the corresponding common wirings includes laser welding. 57. The method for repairing a thin film transistor array substrate according to claim 53 or 55, wherein there is a second particle/ In the event of a hole, the repair method further includes: A region corresponding to one of the pixel electrodes above the second particle/hole is removed, so that the second particle/hole is electrically insulated from one of the pixel electrodes. 58. The method for repairing a thin film transistor array substrate as claimed in claim 57, wherein the method of removing the region of one of the pixel electrodes above the second particle/hole includes laser removal.

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