CN1105324C

CN1105324C - Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate

Info

Publication number: CN1105324C
Application number: CN96107917A
Authority: CN
Inventors: 阪本弘和
Original assignee: Advanced Display Inc
Current assignee: Mitsubishi Electric Corp
Priority date: 1995-05-30
Filing date: 1996-05-30
Publication date: 2003-04-09
Anticipated expiration: 2016-05-30
Also published as: KR960042181A; KR100363140B1; TW300341B; CN1142057A

Abstract

An object of the present invention is to provide a thin film transistor array capable of reliably repairing point defects and a manufacturing method thereof. The array is provided with a point defect repair pattern connected to two adjacent pixels and an island formed by intervening a gate insulating film or a storage capacitor dielectric film on the point defect repair pattern. For a pixel, the transistor part of the pixel is first cut off with a laser, and then the laser is irradiated on a part of the pixel electrode and a part of the adjacent pixel, and the pixel electrodes of the adjacent pixels are short-circuited by intervening in the point defect repair pattern. Make repairs.

Description

The manufacture method of thin-film transistor array base-plate, liquid crystal indicator and this substrate

The invention provides TFT (thin film transistor (TFT)) array base palte, use the manufacture method of the liquid crystal indicator and the tft array substrate of this substrate, the restorative procedure of point defect (it is to make one of principal element that yield rate reduces) particularly is provided.

The sort of device that is shown in Figure 25 and 26 is arranged in the tft array that existing liquid crystal indicator adopted.

Figure 25 is the local expanded view of tft array used in the available liquid crystal display device, and Figure 26 is the A-A sectional drawing among Figure 25.In the drawings, the 1st, glass substrate, the 2nd, have the grid wiring of gate electrode concurrently, the 3rd, the pixel capacitors that constitutes by nesa coating, the 4th, gate insulating film, the 5th, semiconductor layer, the 6th, ohmic contact layer, the 7th, source electrode and wiring, 8 are drain electrode.

The manufacturing process and the structure of existing tft array are described earlier.At first, on the glass substrate that cleaned, form the metallic film of the element of Cr, Ta, Ti, and it is formed figure, and then form gate electrode and wiring 2 with methods such as photoetching processes with methods such as sputtering methods.Secondly, with SiN or the SiO of formation such as plasma CVD (chemical vapour deposition) method as gate insulating film 4 ₂Deng dielectric film, as the i-a-Si of semiconductor layer 5 or polysilicon etc., and as the film of n-a-Si of ohmic contact layer 6 etc.Secondly, make n-a-Si and i-a-Si form island or threadlike graph with methods such as photoetching processes.Secondly, the method with sputter etc. forms the nesa coating that ITO (indium tin oxide) waits, and formation pixel capacitors 3.Form the metallic film of Al, Cr etc. again with sputtering method etc., and it formed figure with photoetching process etc., the source of formation electrode and connect up 7 and drain electrode 8 after, the n-a-Si that is in the formation ohmic contact layer 6 between source-leakage is degraded.At last, as required with formation diaphragms such as SiN.

In addition, in existing this liquid crystal indicator, be shown in the sort of array of Figure 27 and Figure 28 in the used tft array in addition.Figure 27 is the partial plan layout of tft array used in the existing liquid crystal indicator.The B-B sectional drawing of Figure 28 and Figure 27.The manufacturing process and the structure of existing tft array are described according to these figure now.

Be shown in the existing tft array of Figure 27 and Figure 28, at first on the substrate 1 that cleaned, form the metallic film of Cr, Ta, Ti etc. with the method for sputtering method and so on, and it is formed required figure with the method for photoetching and so on, to form gate electrode (and grid wiring) 2.Secondly, form the nesa coating that ITO (indium tin oxide) waits with methods such as sputters, and with the method for photoetching or the like the required figure of its formation, with formation pixel capacitors 3.Secondly, with plasma CVD (chemical vapour deposition) method etc. form as gate insulating film 4, for example by SiO ₂, the dielectric film that constitutes such as SiN, metal oxide film, as the i-a-Si of semiconductor layer 5 or polysilicon etc. and as the films such as n-a-Si of ohmic contact layer 6.Secondly with the method for photoetching process etc., n-a-Si and i-a-Si are formed the figure of island (being shown in the part of the sort of island of the semiconductor layer 5 of Fig. 1) and wire (part of elongated band shape).

Method with photoetching process etc. forms required figure to form contact hole (part that drain electrode 8 is connected with pixel capacitors) 9 on pixel capacitors again.Secondly with methods such as sputtering methods it is formed figure to form source electrode (and source wiring) 7 and drain electrode 8.Secondly, degrade the n-a-Si that is in (on the top of the semiconductor layer 5 that is shown in Fig. 4 and not by the part that either party covered of source electrode and drain electrode) between source electrode and the drain electrode.At last, as required with formation diaphragms such as SiN.

In the tft array that aforesaid way constitutes, because of foreign matter etc. makes gate electrode 2 and drain electrode 8 short circuits, perhaps because of the pixel of the former thereby cisco unity malfunction of the insufficient grade of Ohmic contact, promptly so-called point defect will produce with the probability of several ppm.As the method for repairing this defective, open clear 59-101693 communique or the spy opens shown in the flat 2-134320 communique as the spy, have to form earlier and make the figure that couples together between the drive electrode that adjoins mutually, use laser radiation again, the pixel capacitors that forms defective is connected to the method for adjoining pixel capacitors.

Figure 29 is the partial enlarged drawing of the tft array with memory capacitance used in the existing liquid crystal indicator, and Figure 30 is the A-A sectional drawing among Figure 29.Among the figure, the 1st, glass substrate, the 21st, storage capacitor electrode, the 31st, the dielectric of memory capacitance.

Secondly, manufacturing process and the structure to such existing tft array describes.At first, on the glass substrate 1 that had cleaned, form the metallic film of Cr, Ta, Ti etc., with methods such as photoetching processes it is formed figure to form storage capacitor electrode 21 again with methods such as sputtering methods.Secondly, with SiN or the SiO of formation such as plasma CVD (chemical vapour deposition) method as the dielectric film 31 of memory capacitance ₂Deng film.Then, be formed for figure with the gate electrode that will form later on and grid wiring 2 contacted contact holes etc.Secondly, form the metallic film of Cr, Ta, Ti and so on, and make it to form figure, to form gate electrode and grid wiring 2 with methods such as photoetching with methods such as sputters.Form the transparent conductive film that ITO (indium tin oxide) waits with methods such as sputters again, and form figure with formation pixel capacitors 3 with methods such as photoetching.

Secondly, with SiN or the SiO of methods such as plasma CVD method formation as gate insulating film 4 ₂And so on dielectric film, as the i-a-Si of semiconductor layer 5 or polysilicon etc. and as the films such as n-a-Si of ohmic contact layer 6.Secondly, the method with photoetching etc. forms island or threadlike graph to n-a-Si and i-a-Si.Secondly, form figure, form contact hole with top in pixel capacitors 3 with the method for photoetching process etc.With the metallic film of formation Al, Cr etc. such as sputtering method, with after formation source electrode and source wiring 7 and the drain electrode 8, degrade the n-a-Si that is between source-leakage again with formation figures such as photoetching processes.At last, as required with formation diaphragms such as SiN.

In the tft array that aforesaid way constitutes,, perhaps produce the pixel of cisco unity malfunction, promptly so-called point defect with the probability of several ppm because of the reason of Ohmic contact imperfection etc. perhaps because of foreign matter etc. makes gate electrode 2 and drain electrode 8 short circuits.As the method for repairing this defective, open flat 2-284120 communique and the spy opens shown in the flat 5-66415 communique as the spy, the figure that couples together between forming the drive electrode that adjoins mutually when forming memory capacitance is arranged, and make it fusion, the pixel capacitors that becomes defective is connected to the method that the pixel capacitors of adjoining mutually gets on laser radiation.

As mentioned above, in existing tft array, the generation that exists because of point defect makes the low problem of yield rate.In addition, in existing point defect restorative procedure, though had the connection figure that is used to repair point defect, but when using laser radiation with connection and this figure neighboring pixels electrode, exist when pixel electrode one side is shone, because of pixel capacitors is transparent, thereby laser-transmitting goes over, so be difficult to fully and the problem that figure connects that is connected that is used to repair.

Moreover, carry out laser radiation even also exist, fusion connects situation of figure or the like reliably, thereby the problem that is difficult to repair.

In addition, in existing point defect restorative procedure, though had the figure that is used to repair point defect, but under situation with laser radiation connection and this figure neighboring pixels electrode, exist because pixel capacitors is transparent, thereby laser-transmitting goes over, and the problem that is difficult to connect fully.

Therefore, content of the present invention comprises: have use form simultaneously with gate electrode and grid wiring identical materials, repair figure and repair on figure by getting involved the island that gate insulating film forms in the point defect of carrying out repetition on two pixels that adjoin in this point defect; For the pixel that is identified as point defect, first transistor part with this pixel of laser cutting, and then irradiating laser couple together the pixel capacitors of the pixel that adjoins by getting involved point defect reparation figure to each other.

In addition, content of the present invention also comprises: have use form simultaneously with the memory capacitance identical materials, repair figure and repair on figure by getting involved the island that the memory capacitance dielectric film forms in the point defect that repeats on two pixels that adjoin in this point defect; For the pixel that is identified as point defect, with the transistor part of this pixel of laser cutting, shine again earlier with laser, by getting involved point defect reparation figure the pixel capacitors of adjoining pixel is coupled together each other.

In this case, couple together owing to making two metal films (being that point defect is repaired figure) of getting involved dielectric film with laser and being connected to the island that forms on the pixel capacitors, so can repair easily and reliably.

Fig. 1 is a partial plan layout, the figure shows tft array used in the liquid crystal indicator of embodiments of the invention 1.

Fig. 2 is the A-A sectional drawing of Fig. 1.

Fig. 3 is the B-B sectional drawing of Fig. 1.

Fig. 4 is a schematic partial sectional view.It shows tft array used in the liquid crystal indicator of embodiments of the invention 2.

Fig. 5 is a partial plan layout, and it shows tft array used in the liquid crystal indicator of embodiments of the invention 3.

Fig. 6 is the A-A sectional drawing of Fig. 5.

Fig. 7 is the B-B sectional drawing of Fig. 5.

Fig. 8 is a schematic partial sectional view, and it shows tft array used in the liquid crystal indicator of embodiments of the invention 4.

Fig. 9 is a partial plan layout, and it shows tft array used in the display device of the 5th embodiment of the present invention.

Figure 10 is the A-A sectional drawing of Fig. 9.

Figure 11 is the B-B sectional drawing of Fig. 9.

Figure 12 is the sectional drawing of tft array used in the display device of embodiments of the invention 6.

Figure 13 is the partial plan layout of tft array used in the display device of embodiments of the invention 7.

Figure 14 is the A-A sectional drawing of Figure 13.

Figure 15 is the B-B sectional drawing of Figure 13.

Figure 16 is a tft array sectional drawing used in the display device of embodiments of the invention 8.

Figure 17 is the partial plan layout of tft array used in the liquid crystal indicator of embodiments of the invention 9.

Figure 18 is the A-A sectional drawing of Figure 17.

Figure 19 is the B-B sectional drawing of Figure 17.

Figure 20 is a schematic partial sectional view, and it shows tft array used in the liquid crystal indicator of embodiments of the invention 10.

Figure 21 is a partial plan layout, and it shows tft array used in the liquid crystal indicator of embodiments of the invention 11.

Figure 22 is the A-A sectional drawing of Figure 21.

Figure 23 is the B-B sectional drawing of Figure 21.

Figure 24 is that local section illustrates tft array used in the liquid crystal indicator of embodiments of the invention 12.

The part plan of Figure 25 illustrates tft array used in the available liquid crystal display device.

Figure 26 is the A-A sectional drawing of Figure 25.

Figure 27 is the partial plan layout of TFT used in the existing liquid crystal indicator.

Figure 28 is the B-B sectional drawing of Figure 27.

The part plan of Figure 29 illustrates tft array used in the existing liquid crystal indicator.

Figure 30 is the A-A sectional drawing of Figure 29.

Embodiment

Embodiment 1

With reference to description of drawings embodiments of the invention 1.Fig. 1 is the partial plan layout of tft array used in the liquid crystal indicator of the present invention, and Fig. 2 is the A-A sectional drawing of Fig. 1, and Fig. 3 is the B-B sectional drawing of Fig. 1.In the drawings, the 9th, the point defect of conduct the 1st metallic pattern that forms simultaneously with gate electrode and grid wiring 2 identical materials is repaired figure, the 10th, use the island with source electrode and wiring 7 and conduct the 2nd metallic pattern that forms simultaneously of drain electrode 8 identical materials, and island 10 is formed and is connected on the pixel capacitors 3.The position of laser radiation when in addition, C-C and D represent to carry out the point defect reparation among the figure.In addition, give identical symbol and save explanation for the part identical with conventional example.

Manufacture method to the tft array in the present embodiment describes.At first, on the glass substrate 1 that had cleaned, form the high melting point metal film of Cr, Ta, the Ti etc. of the about 300nm of thickness with methods such as sputtering methods, and make it to form figure, to form gate electrode and wiring 2 and point defect reparation figure 9 with methods such as photoetching processes.Secondly, use SiN or the SiO of the about 300nm of formation thickness such as plasma CVD (chemical vapour deposition) method as gate insulating film 4 ₂Deng dielectric film, as films such as the i-a-Si of the about 200nm of thickness of semiconductor layer 5 or polysilicons, and the films such as n-a-Si of the about 50nm of thickness as ohmic contact layer 6.Secondly, with methods such as photoetching processes n-a-Si and i-a-Si are formed the figure of island or wire.

Form the nesa coating of the ITO (indium tin oxide) etc. of the about 100nm of thickness again with the method for sputter etc., and make it to form figure with formation pixel capacitors 3 with the method for photoetching process etc.Then form the metallic film of Al, the Cr of the about 400nm of thickness or Mo etc. with sputtering method etc., make it to form figure with photoetching process etc., to form source electrode and wiring 7, drain electrode 8, repairing formation island 10 on the part that figure 9 is connected with point defect again, i.e. D place, laser radiation position when repairing point defect, repair figure 9 tops in point defect, by getting involved gate insulating film 4 and pixel capacitors 3 formation islands 10.Afterwards, degrade the n-a-Si that is between source-leakage.At last, as required, with formation diaphragms such as SiN.

In the liquid crystal indicator of the above tft array of making like this and this array of application, for the pixel that is identified as point defect, earlier partly cut off the transistor part of this pixel at the C-C line shown in Fig. 1 with laser, then, to the D on the pixel capacitors 3 part with adjoin D part irradiating laser on the pixel capacitors 3 of pixel, repair the pixel capacitors short circuit each other that figure 9 makes the pixel that adjoins mutually by point defect.Make it to be connected with laser owing to got involved two metal films (being that point defect is repaired figure 9 and island 10) of dielectric film, so reparation is able to easily and carries out reliably.Be effective particularly to laser radiation from pixel capacitors 3 one sides.In addition, repair figure 9 owing to form point defect with the metal of Cr, Ta, Ti etc., so compare when forming with waiting with silicon thin film, the fusion during laser radiation, connection are easy.Also have, be that the pixel capacitors about making connects in the formation in the present embodiment, but pixel capacitors is up and down connected.

If employing present embodiment, thereby then make pixel that is identified as point defect and the pixel short circuit of adjoining make the pixel capacitors current potential that adjoins each other become the identical identical demonstration of carrying out by utilizing point defect to repair figure, so be difficult for being counted as point defect, thereby improved the yield rate of tft array.In addition, in the present embodiment,, only be to have changed figure because usefulness is manufacture method same as the prior art, need not increase the advantage that operation number and cost can not uprise so have.

In addition, if do not use the present invention, the point defect of much less being found then in the tft array stage, even formed this tft array substrate and have transparency electrode and colored filter etc. accompany the liquid crystal indicator of liquid crystal between the electrode base board in opposite directions after, promptly under the situation of pixel capacitors one side incident laser, also can repair easily and reliably.

Embodiment 2

Fig. 4 is a schematic partial sectional view, and it shows used tft array in the display device as embodiments of the invention 2.Present embodiment is removed outside the order of the manufacturing process that has changed pixel capacitors 3 and source electrode and wiring 7 and drain electrode 8, and structure is identical with embodiment 1.Promptly repair figure 9 tops in point defect and getting involved formation island 10 under the situation of dielectric film, 10 tops form pixel capacitors 3 on the island again.Like this, island 10 is in the top of pixel capacitors 3 or following all right, no matter be any structure, all utilisation point defect repair figure 9 is repaired point defect easily and reliably, has obtained the effect identical with embodiment 1.

Embodiment 3

With reference to description of drawings embodiments of the invention 3.Fig. 5 is the partial plan layout of tft array used in the display device of the present invention, and Fig. 6 is the A-A sectional drawing of Fig. 5, the B-B sectional drawing that Fig. 7 is Fig. 5.Among the figure, the 11st, the etching barrier film.

Manufacture method to the tft array in the present embodiment describes.At first, on the substrate 1 that had cleaned, form the high melting point metal films such as Cr, Ta, Ti of the about 300nm of thickness with methods such as sputtering methods, make it to form figure with methods such as photoetching processes again,, form point defect reparation figure 9 again to form gate electrode and wiring 2.Secondly, use SiN or the SiO of the about 300nm of formation thickness such as plasma CVD (chemical vapour deposition) method as gate insulating film 4 ₂Deng SiN or the SiO of dielectric film, the about 100nm of thickness as etching barrier film 11 as the i-a-Si of semiconductor layer 5 or polysilicon etc. and the about 200nm of thickness ₂Deng dielectric film.Secondly, with methods such as photoetching processes, make the etching barrier film form figure.Then, with formation such as plasma CVD methods as the n-a-Si of ohmic contact layer 6 and make it to form figure.

Form the nesa coating of the ITO (indium tin oxide) etc. of the about 100nm of thickness again with the method for sputter etc.In order to obtain as the desired briliancy of liquid crystal indicator, this thickness is 150nm to the maximum.Make this film form figure with methods such as photoetching processes to form pixel capacitors 3.Secondly, form the metallic film of Al, the Cr of the about 400nm of thickness or Mo etc. with methods such as sputtering methods, make it to form figure with photoetching process etc.,, form island 10 repairing on the part that figure 9 is connected again with point defect to form source electrode and wiring 7 and drain electrode 8.At last, as required with formation diaphragms such as SiN.

At the above tft array that makes in this wise and having used in its liquid crystal indicator, for identified be the pixel of point defect, use the transistor part of its pixel of laser cutting earlier, afterwards, again to the D on the pixel capacitors 3 part with adjoin D part irradiating laser on the pixel capacitors 3 of pixel, and repair the pixel capacitors short circuit that figure 9 makes the pixel that adjoins by point defect.

Even if in the tft array of above-mentioned this structure, also can obtain and

embodiment

1 and 2 same effects.

Embodiment 4

The local section of Fig. 8 illustrates used tft array in the liquid crystal indicator in the embodiments of the invention 4.Present embodiment is except changing the pixel capacitors 3 and the order of the manufacturing process of source electrode and wiring 7 and drain electrode 8, and structure is identical with embodiment 3.That is,, form island 10 by getting involved dielectric film, and form pixel capacitors 3 above that in the top that point defect is repaired figure 9.Even this structure also can utilize point defect to repair figure 9, repair point defect easily and reliably, obtain the effect identical with embodiment 1-3.

In addition, the structure of the tft array shown in is nothing but an example in the above-described embodiments, and the present invention is not subjected to the restriction of these structures.

As mentioned above, if employing the present invention, then by adopting the way that makes the 1st metallic pattern that on two pixels that adjoin mutually, repeats and the 2nd metallic pattern fusion that on the 1st metallic pattern, forms with laser radiation in the mode that gets involved gate insulating film, just can obtain can be easily and repair the tft array substrate of picture element defect reliably and use the liquid crystal indicator of this tft array substrate, has the effect that improves yield rate.

In addition, owing to respectively the 1st metallic pattern and grid wiring, the 2nd metallic pattern and source and drain electrode are side by side formed with same metal material, so the process number of making can be identical with the process number of prior art, it is just passable only to change mask, cost can not uprise yet, so can easily make.

Embodiment 5

Fig. 9 shows embodiments of the invention 5 to Figure 11.Fig. 9 is the partial plan layout of the used tft array of display device of the present invention.Figure 10 is the A-A sectional drawing of Fig. 9.Figure 11 is the B-B sectional drawing of Fig. 9.At first, on the glass substrate 1 that had cleaned, form the film of the refractory metal of Cr, Ta, Ti, W, Mo, Al etc. with the method for sputtering method and so on, make its thickness become about 300nm, and form figure with the method for photoetching process etc., to form gate electrode (and grid wiring) 2, again on the position that can connect with the bridging of repairing figure as point defect that below will form formation as the figure 12 on island.Secondly, the nesa coating with methods such as sputter formation ITO (indium tin oxide) or the like makes its thickness be about 100nm.Method with photoetching process etc. makes this film form figure to form pixel capacitors 3 again.Secondly using plasma CVD (chemical vapour deposition) method etc. to form respectively will be as the SiN or the SiO of gate insulator 4 ₂Deng dielectric film (the about 300nm of thickness), as (the about 100nm of thickness) such as the i-a-Si of semiconductor layer 5 or polysilicons and as (the about 500nm of thickness) such as n-a-Si of ohmic contact layer 6.Secondly, the method with photoetching etc. forms wire (perhaps island) figure with n-a-Si and i-a-Si.

Method with photoetching process etc. forms figure again, forms contact hole 91 in the pixel capacitors top.Secondly with the method for sputtering method etc. form the about 400nm of thickness Al, Cr etc. metallic film and form figure with the method for photoetching process etc., to form source electrode (and source wiring) 7, drain electrode 8 and as the bridge 13 of point defect reparation figure.Next degrades the n-a-Si that is between source electrode and the drain electrode.At last, as required with formation diaphragms such as SiN.

At the tft array that makes like this and having used in its liquid crystal indicator, to being identified as the pixel of point defect, with laser the transistor that is contained in this pixel is cut off at the C-C of Fig. 9 line place earlier, then to the D on pixel capacitors part (in the part of bridge 13, in the part that has disposed island 12 in the lower floor of bridge) make the gate insulating film fusion with identical D part irradiating laser on the pixel capacitors of adjoining pixel, repair the bridge of figure by intervening acts, make the pixel capacitors of the above-mentioned pixel that is identified as point defect and the pixel capacitors short circuit of the pixel that adjoins.

Embodiment 6

Embodiments of the invention 6 are shown in Figure 12.The structure of Figure 12 is identical with the structure of embodiment 5, and the manufacturing process of different is gate electrode 2 and pixel capacitors 3 changes.Promptly form island electrode 12 in the top of pixel capacitors 3.

Embodiment 7

Figure 13 shows embodiments of the invention 7 to Figure 15.Figure 13 is the partial plan layout of tft array used in the display device of the present invention, the A-A sectional drawing that Figure 14 is Figure 13.Figure 15 is the B-B sectional drawing of Figure 13.At first, on the glass substrate 1 that cleaned, form the film of the refractory metal of Cr, Ta, Ti, W, Mo, Al or the like with methods such as sputtering methods, make its thickness be about 300nm, and form figure to form gate electrode (and grid wiring) 2 with methods such as photoetching processes, again can with position that the following bridge of repairing figure as point defect that will form is connected on form figure 12 as the island.Secondly, form the nesa coating of ITO (indium tin oxide) etc., make its thickness be about 100nm with methods such as sputtering methods.In order to obtain to surpass 150nm as the required briliancy of liquid crystal indicator, this film maximum.Make this film form figure with methods such as photoetching processes to form pixel capacitors 3.Secondly form SiN or SiO respectively with plasma CVD (chemical vapour deposition) method etc. as gate insulating film 4 ₂Deng dielectric film (the about 300nm of thickness), as the i-a-Si of semiconductor layer 5 or polysilicon or the like (the about 100nm of thickness) and as the SiN or the SiO of etching barrier film 101 ₂And so on dielectric film (the about 200nm of thickness).Secondly, with methods such as photoetching processes the etching barrier film is formed figure.

Again with formation such as plasma CVD methods as (the about 50nm of thickness) such as n-a-Si of ohmic contact layer, treat that with photoetching process method forms figure again, on pixel capacitors, form contact hole 91.Secondly, form the metallic film of Al, the Cr etc. of the about 400nm of thickness, make it to form figure to form source electrode (and source wiring) 7, drain electrode 8 and to repair figure formation bridge 13 as point defect with methods such as photoetching processes with methods such as sputtering methods.Secondly, degrade the n-a-Si that is present between source electrode and the drain electrode and be present in pixel parts do not need n-a-Si and i-a-Si.At last, as required with formation diaphragms such as SiN.

At the tft array that makes in this wise and having used in the liquid crystal indicator of this array, for the pixel that is identified as point defect, with laser the transistor that contains in this pixel is partly cut off at the C-C of Figure 13 line earlier, afterwards, D on pixel capacitors part (lower floor of the inherent bridge of the part of bridge 13 disposes the part on island 12) is made the gate insulating film fusion with identical D part irradiating laser on the pixel capacitors of adjoining pixel, by the bridge of intervening acts reparation figure, make the above-mentioned pixel capacitors and the pixel capacitors short circuit of adjoining pixel that is identified as the pixel of point defect.

Embodiment 8

Embodiments of the invention 8 are shown in Figure 16.The structure of Figure 16 is identical with the structure of embodiment 7, and different is that gate electrode 2 is changed with the order of the manufacturing process of pixel capacitors 3.Promptly form island electrode 12 in the top of pixel capacitors 3.

If employing the present invention is owing to can easily repair point defect, so can improve tft array and use the fabrication yield of its liquid crystal indicator.In addition, if employing the present invention, the point defect that the tft array stage in manufacture process is found certainly needless to say, even if for finishing the point defect of finding after the liquid crystal indicator, promptly when repairing, must make laser under the situation of pixel capacitors one side incident, also can repair easily and reliably.

In addition, it is identical that manufacturing process and existing method are finished, and only figure changes to some extent, so need not to increase operation, cost can not uprise yet.

Embodiment 9

Embodiments of the invention 9 are shown in Figure 17.Figure 17 is the partial plan layout of tft array used in the display device of the present invention.Figure 18 is the A-A sectional drawing of Figure 17.Figure 19 is the sectional drawing of the B-B of Figure 18.In the drawings, the 111st, the point defect of conduct the 1st metallic pattern that forms simultaneously with storage capacitor electrode 21 usefulness identical materials is repaired figure, the 121st, use the island of conduct the 2nd metallic pattern that forms simultaneously with gate electrode and grid wiring 2 identical materials, island 12 is connected in the bottom of pixel capacitors 3.The position of laser radiation when C-C and D are the point defect reparation among the figure.

Then, the manufacture method to the tft array in the present embodiment describes.At first, on the glass substrate 1 that cleaned, the metallic film with the formation of methods such as sputtering method Cr, Ta, Ti etc. makes it to form figure with methods such as photoetching processes, repairs figure 111 to form storage capacitor electrode 21 and point defect.Secondly, with SiN or the SiO of formation such as plasma CVD (chemical vapour deposition) method as the dielectric film 31 of memory capacitance ₂Deng film, with the figure of the contact hole that is formed for contacting with grid wiring 2 with the following gate electrode that will form.Secondly, with methods such as sputtering methods, form the high melting point metal film of Cr, Ta, the Ti etc. of the about 300nm of thickness, and make it to form figure to form gate electrode and grid wiring 2 and to repair formation island 12 on the part that figure is connected with point defect with methods such as photoetching processes.That is, repair figure 111 tops in point defect and form island 12 by the dielectric 3 of getting involved memory capacitance at the D place, laser radiation position when repairing point defect.

Form the nesa coating of the ITO (indium tin oxide) etc. of the about 100nm of thickness again with methods such as sputtering methods, make it to form figure with methods such as photoetching processes then, with formation pixel capacitors 3.Then, with methods such as plasma CVD (chemical vapour deposition) methods, form SiN or SiO as the about 300nm of thickness of gate insulating film 4 ₂Deng dielectric film, as the i-a-Si of the about 200nm of thickness of semiconductor layer 5 or polysilicon etc., and as n-a-Si of the about 50nm of thickness of ohmic contact layer 6 etc.Secondly, with methods such as photoetching processes, make n-a-Si and i-a-Si form the figure of island or wire.Secondly, form figure, to form contact hole in pixel capacitors 3 tops with methods such as photoetching processes.Secondly, form the metallic film of Al, the Cr etc. of the about 400nm of thickness, and make it to form figure, after having formed source electrode and source wiring 7 and drain electrode 8, degrade the n-a-Si that is present between the leakage of source with methods such as photoetching processes with methods such as sputtering methods.At last, as required, with formation diaphragms such as SiN.

At the above-mentioned tft array that makes like this and having used in the liquid crystal indicator of this array, for the pixel that is identified as point defect, with laser the transistor part of this pixel is partly cut off at C-C line shown in Figure 1 earlier, afterwards, to the D on the pixel capacitors 3 part with adjoin D part irradiating laser on the pixel capacitors 3 of pixel, repair figure 111 by point defect and make the pixel capacitors short circuit of adjoining pixel.At this moment, middle two metal films having got involved the dielectric 31 of memory capacitance, i.e. point defect reparation figure 111 makes it to be connected with island 12 usefulness laser, promptly can repair easily and reliably.Be effective particularly to the laser radiation that comes from pixel capacitors 3 one sides.In addition, in the present embodiment, its formation is that the pixel capacitors about making connects, but pixel capacitors is up and down connected.

If the employing present embodiment then utilizes point defect to repair figure 111 by employing and makes the pixel that is identified as point defect and the way of neighboring pixels short circuit, it is identical that the current potential of neighboring pixels electrode is become each other, carries out identical demonstration.So no longer be easy to find out to be point defect, thereby improved the yield rate of tft array.In addition, owing to be manufacture method same as the prior art, only be that figure has changed, can not uprise the advantage that process number need not to increase so have cost.

In addition, if employing the present invention, then the point defect of being found in the tft array stage is self-evident, even if formed this tft array substrate and have transparency electrode and colored filter etc. accompany the liquid crystal indicator of liquid crystal between the electrode base board in opposite directions after, promptly under the situation of pixel capacitors one side incident laser, also can repair easily and reliably.

Embodiment 10

The local section of Figure 20 illustrates tft array used in the display device of embodiments of the invention 10.Present embodiment 10 is except the order of the manufacturing process of gate electrode and grid wiring 2 and pixel capacitors 3 has been changed, and its structure is identical with embodiment's 9.That is, the top of repairing figure 111 in point defect forms pixel capacitors 3 by the dielectric 31 of getting involved memory capacitance, forms island 12 more above that.So, island 12 no matter be any structure, can utilize point defect to repair figure 111 and easily repair point defect in the top of pixel capacitors 3 or following all right, can obtain the effect identical with embodiment 9.

Embodiment 11

With reference to description of drawings embodiments of the invention 11.Figure 21 is the partial plan layout of tft array used in the liquid crystal indicator of the present invention.Figure 22 is the A-A sectional drawing of Figure 21.Figure 23 is the B-B sectional drawing of Figure 21.Among the figure, the 131st, the etching barrier film.

Manufacture method to the tft array in the present embodiment describes.At first, on the glass substrate 1 that cleaned, form the metallic film of Cr, Ta, Ti etc., then, make it to form figure,, form point defect again and repair figure 111 to form storage capacitor electrode 21 with methods such as photoetching processes with methods such as sputtering methods.Secondly, with SiN or the SiO of plasma CVD (chemical vapour deposition) method formation as the dielectric film 31 of memory capacitance ₂Deng film, make the contact hole that contacts with following gate electrode that will form and grid wiring form figure.Secondly, form the high melting point metal film of Cr, Ta, the Ti etc. of the about 300nm of thickness with methods such as sputtering methods, make it to form figure with methods such as photoetching processes again,, repairing formation island 12 on figure 111 coupling parts with point defect again to form gate electrode and grid wiring 2.Promptly figure 111 tops are repaired in point defect in the position of laser radiation when repairing point defect, form island 12 by the dielectric 31 of getting involved memory capacitance.

Form the nesa coating of the ITO (indium tin oxide) etc. of the about 100nm of thickness again with methods such as sputters.For will obtaining as the desired briliancy of liquid crystal indicator, above-mentioned thickness maximum is no more than 150nm.Make this film form figure with methods such as photoetching processes, to form pixel capacitors 3.Secondly, with SiN or the SiO of formation such as plasma CVD method as the about 300nm of thickness of gate insulating film 4 ₂Deng dielectric film, as the i-a-Si of the about 100nm of thickness of semiconductor layer 5 or polysilicon etc. and as SiN or the SiO of the about 200nm of thickness of etching barrier film 131 ₂Deng dielectric film.Secondly, with methods such as photoetching processes, make etching barrier film 131 form figure.Next, with plasma CVD method etc. form the about 50nm of thickness as the n-a-Si of ohmic contact layer 6 etc., and, form figure, with at pixel capacitors 3 tops formation contact hole with methods such as photoetching processes.Secondly, with methods such as sputtering methods, form the metallic film of Al, the Cr etc. of the about 400nm of thickness, and make it to form figure, to form source electrode and source wiring 7 and drain electrode 8 with methods such as photoetching processes.Secondly, degrade the n-a-Si that is present between the leakage of source and the n-a-Si that does not want and the i-a-Si that are present in the pixel parts.At last as required, with formation diaphragms such as SiN.

At the above-mentioned tft array that makes like this and having used in the liquid crystal indicator of this array, to being identified as the pixel of point defect, with laser the transistor part of this pixel is cut off on the C-C of Figure 21 line part earlier, then, D on the pixel capacitors 3 of the D on the pixel capacitors 3 part and adjacent image point part respectively according to laser, and is made the pixel capacitors short circuit of adjacent image point by point defect reparation figure 111.

Even if in the tft array of above-mentioned this structure, also can obtain the efficient identical with embodiment 9 and embodiment 10.

Embodiment 12

The local section of Figure 24 illustrates tft array used in the liquid crystal indicator of embodiments of the invention 12.Present embodiment 12 is except having changed the gate electrode 2 and the order of the manufacturing process of pixel capacitors 3, and its structure is identical with embodiment 11.Promptly repair the top of figure 111 earlier in point defect, form pixel capacitors 3, form island 12 then above that by the dielectric 31 of getting involved memory capacitance.Even if such structure, also utilisation point defect repair figure 111 is easily repaired point defect.Can obtain the effect identical with embodiment 9～11.

In addition, the tft array structure shown in is only sub for example in the above-described embodiments, the invention is not restricted to these structures.

As mentioned above, if employing the present invention, then make the 1st metallic pattern that on two adjacent pixels, repeats and the way of the 2nd metallic pattern fusion that forms in above-mentioned the 1st metallic pattern top by the dielectric film of getting involved memory capacitance dielectric etc. by adopting with laser radiation, just can obtain can be easily and repair the tft array substrate of picture element defect reliably and use the liquid crystal indicator of this array base palte, has the effect that improves yield rate.

In addition, if adopt manufacture method of the present invention, then owing to make the 1st metallic pattern and storage capacitor electrode and the 2nd metallic pattern and grid wiring side by side formed with identical materials respectively, its process number is identical with the process number of prior art, only change mask and get final product, thereby can easily make and cost is uprised.

Claims

1. A thin film transistor array substrate, characterized in that:

It is equipped with: a gate wiring formed on a transparent insulating substrate and composed of a metal thin film and having a gate electrode; a semiconductor layer provided on the gate wiring through an intervening gate insulating film; and a semiconductor layer together with the semiconductor layer. A source wiring and a drain electrode having both source electrodes of the device; a pixel electrode made of a transparent conductive film disposed near the semiconductor device; and a pixel electrode made of the same metal material as the gate wiring and arranged to straddle the The first metal pattern on two adjacent pixels; the second metal pattern made of the same metal material as the source wiring and drain electrode, which is arranged on the above-mentioned first metal pattern by intervening the above-mentioned gate insulating film ;

The pixel defect is repaired by connecting two adjacent pixel electrodes by melting and connecting the first metal pattern and the second metal pattern by laser irradiation.

2. The thin film transistor array substrate according to claim 1, wherein the gate wiring and the first metal pattern are made of metal such as Cr, Ta or Ti.

3. The thin film transistor array substrate according to claim 1, wherein the second metal pattern is made of metal such as Al, Cr or Mo.

4. The thin film transistor array substrate according to claim 1, wherein the second metal pattern is formed to be connected to the upper side or the lower side of the pixel electrode.

5. A method for manufacturing a thin film transistor array substrate, characterized in that it comprises the following steps:

Metal thin films of Cr, Ta, Ti, etc. are formed on the transparent insulating substrate by methods such as sputtering, and then patterned by methods such as photolithography to form gate electrodes and gate wiring and spanning two adjacent images. The process of forming the first metal pattern on the element;

The process of sequentially forming a gate insulating film, a semiconductor layer and an ohmic contact layer by means of plasma chemical vapor deposition and patterning them;

The process of forming a transparent conductive film by sputtering and other methods and forming a pattern to form a pixel electrode;

A metal thin film such as Al, Cr, or Mo is formed and patterned by a sputtering method to form a source electrode, a source wiring, and a drain electrode, and at least the above-mentioned first metal pattern is formed by intervening the above-mentioned gate insulating film. the process of the second metal pattern;

When a pixel defect is found, the signal circuit of the pixel is cut off by laser irradiation, and then the first metal pattern and the second metal pattern are melted to connect two adjacent pixel electrodes to repair the pixel defect process.

6. A thin film transistor array substrate, characterized in that:

Equipped with: a gate wiring with a gate electrode formed of a metal thin film formed on a transparent insulating substrate; a semiconductor layer provided on the gate wiring through an intervening gate insulating film; and a semiconductor device together with the semiconductor layer A source wiring and a drain electrode having both source electrodes; a pixel electrode composed of a transparent conductive film disposed near the above-mentioned semiconductor device; a storage capacitor electrode composed of a metal thin film formed on the above-mentioned transparent insulating substrate; The storage capacitor dielectric film on the storage capacitor electrode; the first metal that is made of the same metal material as the storage capacitor electrode and is arranged to straddle the adjacent two pixel electrodes at a position isolated from the storage capacitor electrode Pattern; the second metal pattern arranged on the top of the first metal pattern by passing through the insulating film such as the storage capacitor dielectric film;

The above-mentioned first metal pattern and the above-mentioned second metal pattern are melted and connected by laser irradiation to connect two adjacent pixel electrodes to repair pixel defects.

7. The thin film transistor array substrate according to claim 6, wherein the storage capacitor electrode and the first metal pattern are made of metal such as Cr, Ta or Ti.

8. The thin film transistor array substrate according to claim 6, wherein the second metal pattern is made of metal such as Cr, Ta or Ti.

9. The thin film transistor array substrate according to claim 6, wherein the second metal pattern is made of the same metal material as the gate wiring.

10. The thin film transistor array substrate according to claim 6, wherein the second metal pattern is formed to be connected to the upper side or the lower side of the pixel electrode.

11. A liquid crystal display device, characterized in that the thin film transistor array substrate according to any one of claims 1 to 4 and claims 6 to 10 and the opposite electrode substrate with transparent electrodes and color filters, etc. Liquid crystals are arranged in between.

12. A method for manufacturing a thin film transistor array substrate, characterized in that it has the following steps:

Metal thin films of Cr, Ta or Ti are formed on the transparent insulating substrate by sputtering, etc., and then patterned by photolithography to form storage capacitor electrodes and straddle two adjacent pixels. the process of forming the first metal pattern;

The process of forming SiN, _SiO2 , etc. by plasma chemical vapor deposition, etc., to form a pattern to form a storage capacitor dielectric film;

Form metal films such as Cr, Ta, or Ti by sputtering, etc., and then pattern them by photolithography to form gate electrodes and gate wiring, and intervene at least the above-mentioned memory on the first metal pattern. A process of forming a second metal pattern on the capacitor dielectric film;

The process of sequentially forming a gate insulating film, a semiconductor layer and an ohmic contact layer by plasma chemical vapor deposition, and forming a pattern;

A process of forming a metal thin film of Al, Cr, etc. by sputtering and patterning it to form source electrodes, source wiring, and drain electrodes;

When a pixel defect has been identified, the signal circuit of the pixel is cut off by laser irradiation, and then the first metal pattern and the second metal pattern are melted, and two adjacent pixel electrodes are connected to repair the image. defect-free process.

13. A liquid crystal display device, which is a thin film transistor array substrate with a liquid crystal sandwiched on a transparent insulating substrate, a thin film transistor and a pixel electrode made of a transparent conductive film, and a transparent electrode and a color filter. A liquid crystal display device between opposing electrode substrates, wherein the thin film transistor has a gate electrode and a gate wiring made of a metal thin film, a gate insulating film, a semiconductor layer, an ohmic contact layer, a source electrode, a source wiring, and a drain electrode, It is characterized in that a bridge composed of a metal thin film is formed on the above-mentioned gate insulating film and arranged across the adjacent pixel electrodes, and under the above-mentioned gate insulating film, corresponding to the above-mentioned bridge, and respectively connected to the corresponding A pair of islands provided corresponding to adjacent pixel electrodes.

14. The liquid crystal display device according to claim 13, wherein the islands are formed of a high melting point metal.

15. The liquid crystal display device according to claim 14, wherein the refractory metal is any one of Cr, Ta, W, Mo or Al.

16. The liquid crystal display device according to claim 13, 14 or 15, wherein the islands are connected to the pixel electrodes.

17. A method for manufacturing a liquid crystal display device, the method being a method for manufacturing a liquid crystal display device according to claim 13, characterized in that, while forming the above-mentioned grid electrode and grid wiring, use the same The metal material forms the islands.

18. A method for repairing a liquid crystal display device, characterized in that: in the liquid crystal display device according to claim 13, the pixel electrode containing a point defect is connected to the two pixel electrodes adjacent to the pixel electrode. Any one of the pixel electrodes is set to the same potential to repair the above-mentioned pixel electrodes containing point defects.

19. The method for repairing a liquid crystal display device as claimed in claim 18, wherein any one of the pixel electrodes connected to the defective pixel electrode and the two pixel electrodes adjacent to the pixel electrode is The bridge on the electrode is short-circuited with the island corresponding to the bridge to bring them at the same potential.

20. The method for repairing a liquid crystal display device according to claim 19, wherein a laser is used to melt the gate insulating film between the bridge and the island corresponding to the bridge to form a short circuit.