CN100442479C - Repairing method of thin film transistor array substrate and removing method of thin film - Google Patents

Abstract

A method for repairing a thin film transistor array substrate is suitable for repairing a thin film transistor array substrate, wherein the thin film transistor array substrate is provided with a plurality of pixel electrodes, and at least one residue is arranged between the pixel electrodes, so that the pixel electrodes on two sides of the residue are mutually conducted by the residue, and the method for repairing the thin film transistor array substrate comprises the following steps: applying at least one pulse beam with a pulse width of 1/20-1/4 seconds to the residue to remove at least part of the residue and electrically insulate the pixel electrodes on both sides of the residue, wherein the wavelength of the pulse beam is 300-500 nm. The repairing method of the thin film transistor array substrate can provide accurate control and fine adjustment for the repairing energy, and the repairing method enables the process yield of the thin film transistor array substrate to be improved.

Description

Method for repairing thin film transistor array substrate and method for removing thin film

This application is a divisional application with application number ZL2004100422758. The filing date of the original application is April 28, 2004, and the title of the invention is "Thin Film Transistor Array Substrate and Its Repair Method".

technical field

The present invention relates to a thin film transistor array substrate (Thin Film Transistor array, TFT array) repair method and thin film removal method, and in particular to a method that can greatly improve the yield of the repair process (yields of repair process ) The method for repairing the thin film transistor array substrate and the method for removing the thin film.

Background technique

With the substantial improvement of computer performance and the high development of Internet and multimedia technology, most of the transmission of image information has been converted from analog to digital transmission. In order to adapt to the modern life style, the volume of video or image devices is becoming thinner and thinner day by day. The traditional cathode ray tube (Cathode Ray Tube, CRT) display has been monopolizing the display market in recent years because of its excellent display quality and economy. However, for the environment where individuals operate most terminals/display devices on the table, or from the perspective of environmental protection, if the trend of energy saving is predicted, cathode ray tubes still have many problems in terms of space utilization and energy consumption, and There is no effective solution to the demands of lightness, thinness, shortness, smallness and low power consumption.

Therefore, in recent years, with the maturity of optoelectronic technology and semiconductor manufacturing technology, the flat panel display (Flat Panel Display) has also been promoted vigorously. The advantages of lightness and small size have gradually replaced traditional cathode ray tube displays and become the mainstream of display products in recent years.

A general color liquid crystal display is composed of a color filter, a thin film transistor array substrate, and a liquid crystal layer between the two. Among them, there are a plurality of thin film transistors arranged in an array on the thin film transistor array substrate, which respectively correspond to a plurality of pixel region (pixel region) configurations, and are connected by a plurality of scan lines (scan lines) and data lines (data lines). drive. Each thin film transistor is connected to a pixel electrode, which is usually made of transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is used to drive the twist of the upper liquid crystal layer to achieve different display Gray scale effect. In addition, in the design of the existing thin film transistor array substrate, the pixel electrodes are usually extended above the scanning wiring, or a common line is arranged under each pixel electrode, so that the pixel electrode, scanning wiring The wire (or common wiring) and the dielectric layer (dielectric layer) in between, such as the insulating layer (insulating layer) or the protection layer (passivation layer), etc., constitute a storage capacitor (storage capacitor, Cst) to provide better display effect.

However, when manufacturing the pixel electrodes of the known thin film transistor array substrates, indium tin oxide (ITO) or indium zinc oxide (IZO) often remains due to process errors, so that the pixels between adjacent pixels The electrodes are abnormally turned on due to residue. In addition, the pollution of the external environment may also cause particles or holes to fall into the dielectric layer, causing the upper and lower electrodes in the storage capacitor to have capacitance leakage due to the existence of particles or holes. . In this way, abnormal display of pixels will be caused, and then the display quality will be poor. In order to solve the above-mentioned problem of abnormal display, most of the current methods are to connect the upper and lower electrodes of the defective pixel by laser welding, so as to make the defective pixel dark. However, this method will relatively increase the number of dark spots on the panel, thus affecting the display quality.

Contents of the invention

The purpose of the present invention is to provide a thin film transistor array substrate, which is used to avoid the capacitor leakage from the upper and lower electrodes of the storage capacitor due to particles or holes, so as to improve the process yield.

Another object of the present invention is to provide a method for repairing a thin film transistor array substrate, which can effectively remove residues between pixel electrodes that may cause short circuits, thereby improving process yield.

Another object of the present invention is to provide a method for repairing a thin film transistor array substrate, which can effectively remove the part of the pixel electrode corresponding to the particle or hole in the storage capacitor, so as to avoid the leakage of the storage capacitor and improve the manufacturing process. Rate.

Another object of the present invention is to provide a method for repairing a thin-film transistor array substrate, which uses pulsed beams for repair, and can provide precise control and fine-tuning of the repair energy, thereby reducing the chance of damage to components around the repair area , thereby improving the process yield.

Another object of the present invention is to provide a method for removing a film, which uses a pulsed beam, and can provide precise control and fine-tuning of the action energy of the pulsed beam, so that the removal amount of the film can be precisely controlled and fine-tuned, and then Improve patching accuracy.

Based on the above or other objectives, the present invention proposes a thin film transistor array substrate, which includes, for example, a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes. Wherein, the scanning wiring and the data wiring are arranged on the substrate, and a plurality of pixel areas are distinguished on the substrate, each thin film transistor is arranged in one of the pixel areas, and the thin film transistor is driven by the scanning wiring and the data wiring . In addition, each pixel electrode is located in one of the pixel areas to be electrically connected to one of the corresponding thin film transistors, and a part of each pixel electrode is located above one of the scanning lines to form a storage capacitor . When a particle or hole exists between one of the scanning wires and a defective pixel electrode among the pixel electrodes, the defective pixel electrode has an opening corresponding to the particle or hole to avoid the defect Capacitive leakage occurs between the pixel electrode and the scanning wiring. .

Based on the above or other objectives, the present invention also proposes a thin film transistor array substrate, which includes, for example, a substrate, a plurality of scanning wirings, a plurality of data wirings, a plurality of thin film transistors, a plurality of pixel electrodes, and a plurality of common wirings and a particle or hole. Wherein, the scanning wiring and the data wiring are arranged on the substrate, and a plurality of pixel areas are distinguished on the substrate, each thin film transistor is arranged in one of the pixel areas, and the thin film transistor is driven by the scanning wiring and the data wiring . In addition, each pixel electrode is located in one of the pixel areas to be electrically connected to one of the corresponding thin film transistors, and the common wiring is arranged on the substrate, and a part of each pixel electrode is located on the corresponding common wiring. One of them is above to form a storage capacitor. When a particle or a hole exists between one of the common wirings and a defective pixel electrode in the pixel electrode, the defective pixel electrode has an opening corresponding to the particle or hole to prevent the storage capacitor from being damaged due to the particle or hole. The existence of the hole, and the situation of capacitance leakage occurs.

In the present invention, the above two thin film transistor array substrates further include, for example, a dielectric layer disposed between the pixel electrodes and the scanning lines.

Based on the above or other purposes, the present invention also proposes a method for repairing a thin film transistor array substrate, which is suitable for repairing a thin film transistor array substrate, wherein the thin film transistor array substrate has, for example, a plurality of pixel electrodes, and the gap between the pixel electrodes is There is at least one residue, so that the pixel electrodes on both sides of the residue are connected to each other by the residue. The method for repairing a thin film transistor array substrate of the present invention includes applying at least one pulsed beam with a pulse width between 1/20 second and 1/4 second on the residue, so as to remove at least part of the residue, and make the residue both The pixel electrode on the side is electrically insulated, and the wavelength of the pulsed beam is between 300nm and 500nm.

Based on the above or other purposes, the present invention further proposes a method for repairing a thin film transistor array substrate, which is suitable for a storage capacitor on the gate (Cs on gate) or a storage capacitor on the common wiring (Cs on common) The thin film transistor array substrate is repaired, wherein the thin film transistor array substrate has a plurality of storage capacitors. When there is a particle or hole between a pixel electrode in a storage capacitor and a corresponding scanning wiring or a common wiring, the method for repairing a thin film transistor array substrate of the present invention includes applying at least one pulse width between Pulse the beam between 1/20 second and 1/4 second on the pixel electrode to remove part of the pixel electrode above the particle or hole to avoid capacitance leakage between the defective pixel electrode and the scanning wiring .

In the above two methods for repairing thin film transistor array substrates of the present invention, the pulse width of the pulsed beam is, for example, between 1/11 second and 1/4 second, preferably 0.1 second. In addition, the pulsed beam is, for example, a pulsed laser, and the wavelength of the pulsed beam is, for example, between 300 nm and 500 nm.

Based on the above or other purposes, the present invention proposes a method for removing a thin film, for example, applying at least one pulsed beam with a pulse width between 1/20 second and 1/4 second on a thin film to remove part of the thin film The region is removed, wherein the thin film is at least one pixel electrode on the thin film transistor array substrate.

In the thin film removal method of the present invention, the pulse width of the pulsed beam is, for example, between 1/11 second to 1/4 second, preferably 0.1 second. In addition, the pulsed beam is, for example, a pulsed laser, and the wavelength of the pulsed beam is, for example, between 300 nm and 500 nm.

Based on the above, the present invention can be used, for example, to remove residues between pixel electrodes, so as to avoid abnormal conduction of adjacent pixel electrodes due to residues. In addition, the thin film transistor array substrate and its repairing method proposed by the present invention can also remove some of the pixel electrodes above the particles or holes that may cause the current leakage of the storage capacitor, so as to ensure the normal operation of the storage capacitor. Since the method for repairing the thin film transistor array substrate of the present invention uses pulsed beams for repairing, it can provide precise control and fine-tuning of the repairing energy, so as to carry out precise repairing actions on the residues above the element layer, thereby improving the manufacturing process of the liquid crystal panel. Rate.

Description of drawings

In order to make the above and other objects, features and advantages of the present invention more comprehensible, the following preferred embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic diagram of a thin film transistor array substrate according to a preferred embodiment of the present invention.

FIG. 2 is a schematic diagram of a thin film transistor array substrate according to a preferred embodiment of the present invention.

FIG. 3A is a schematic diagram of a thin film transistor array substrate according to another preferred embodiment of the present invention.

Fig. 3B is a cross-sectional view along line A-A' of Fig. 3A.

4A and 4B are schematic diagrams of the thin film transistor array substrate in FIGS. 4A and 4B after repairing, respectively.

FIG. 5A is a schematic diagram of a thin film transistor array substrate according to another preferred embodiment of the present invention.

Fig. 5B is a sectional view taken along line B-B' of Fig. 5A.

FIGS. 6A and 6B are schematic views of the thin film transistor array substrates of FIGS. 5A and 5B after repairing, respectively.

Detailed ways

Please refer to FIG. 1 , which shows a schematic diagram of a thin film transistor array substrate according to a preferred embodiment of the present invention. The thin film transistor array substrate 100 includes, for example, a substrate 110 (shown in FIG. 3B ), a plurality of scanning lines 120 , a plurality of data lines 130 , a plurality of thin film transistors 140 and a plurality of pixel electrodes 150 . Wherein, the scan wires 120 and the data wires 130 are respectively arranged on the substrate 110, and a plurality of pixel regions 110a are divided on the substrate. The thin film transistor 140 is correspondingly arranged in the pixel region 110 a and driven by the scan wiring 120 and the data wiring 130 . In addition, the pixel electrode 150 is correspondingly disposed in the pixel region 110 a and is electrically connected to the corresponding thin film transistor 140 , and the material of the pixel electrode 150 is, for example, a transparent conductive material such as indium tin oxide or indium zinc oxide. It is worth mentioning that, in order to simplify the illustration, FIG. 1 of this embodiment only shows relevant elements required for illustration. In fact, the thin film transistor array substrate 100 may also have other components such as a storage capacitor on the gate (Cston gate) or a storage capacitor (Cston on common) on the common wiring.

Please refer to FIG. 1 again. In the process of manufacturing the pixel electrode 150, a residue 160, such as indium tin oxide or indium zinc oxide, is left on the top of the data wiring 130 due to process control errors. . As a result, the plurality of pixel electrodes 150 next to the data wiring 130 are abnormally conducted due to the residue 160 , resulting in the abnormal operation of the thin film transistor array substrate 100 . The present invention proposes a method for repairing a thin film transistor array substrate, which is suitable for repairing the above thin film transistor array substrate 100 to solve the problem that the residue 160 causes abnormal conduction of adjacent pixel electrodes 150 .

As shown in FIG. 1 , the method for repairing the TFT array substrate of the present invention is to apply a pulsed beam at least once to the adjacent region 170 between the residue 160 and the pixel electrode 150 to remove part of the residue 160 connected to the pixel electrode 150, In order to electrically insulate the pixel electrodes 150 on both sides of the residue 160 . Of course, in other embodiments, the residue 160 can also be removed directly, or other parts of the residue 160 can be removed to achieve the effect of separating the pixel electrodes 150 on both sides of the residue 160 . In addition, in a preferred embodiment of the present invention, the pulse width of the pulsed beam is, for example, between 1/20 second to 1/4 second, wherein a preferred range is between 1/11 second to 1/4 second , the best is 0.1 seconds. In addition, the pulsed light beam is, for example, a pulsed laser, and its wavelength range is, for example, between 300 nm and 500 nm.

It is worth mentioning that the pulse width referred to above is the action time of each pulse beam, and when the pulse width is T, the f value of the pulse beam is 1/T. In addition, in actual operation, the total action time can also be determined with the frequency value (shot per second) during repairing, where the frequency value refers to the number of pulsed beams applied per second. For example, if a pulsed light beam with a pulse width of 0.1 second (that is, the f value is 10) is used, and the frequency value is 2, the total action time on the target object per second is 0.2 seconds.

The repairing method of the thin film transistor array substrate of the present invention is to remove the residue by pulsed beam. Among them, since the action time of the pulsed beam can be adjusted through the pulse width and frequency value, it can provide precise control and fine-tuning of the repairing energy to perform precise repairing actions. Of course, the residues described in the above-mentioned embodiments are only for example. In fact, the residues may be located anywhere on the thin film transistor array substrate, such as above the scanning wiring or above the thin film transistors, etc., and the thin film transistor of the present invention The method for repairing the array substrate can effectively avoid damage to the circuit or components under the residue due to excessive repair energy.

Please refer to FIG. 2 , where the residue 160 is located above the thin film line crystal 140. Similarly, the method for repairing the thin film transistor array substrate of the present invention can directly remove the residue 160, or remove part of the residue 160. The purpose of electrically insulating the pixel electrodes 150 on both sides is achieved. However, the related repairing actions are similar to those of the above-mentioned embodiments, and will not be described one by one here.

Please refer to FIGS. 3A and 3B respectively, wherein FIG. 3A is a schematic diagram of a thin film transistor array substrate according to another preferred embodiment of the present invention, and FIG. 3B shows a cross-sectional view of the A-A' line of FIG. Reference numerals in FIG. 1 indicate the same components as those in FIG. 1 , and their related descriptions can refer to the above-mentioned embodiments, and will not be repeated hereafter. In this embodiment, the pixel electrode 150 extends above the scanning wiring 120, and there is, for example, a dielectric layer 181 between the pixel electrode 150 and the scanning wiring 120, which is, for example, a gate insulating layer extended by the thin film transistor 140. 182 and a protective layer 184, and the pixel electrode 150, the gate insulating layer 182, the protective layer 184 and the scanning wiring 120 form a storage capacitor. In addition, particles or holes 186 are formed in the dielectric layer 181, for example, due to the contamination of the manufacturing process. Due to the existence of the particles or holes 186, capacitance is generated between the pixel electrodes 150 on the upper layer and the scanning lines 120 on the lower layer. The problem of leakage.

Please refer to FIGS. 4A and 4B , which respectively show schematic diagrams of the TFT array substrates in FIGS. 3A and 3B after being repaired. In order to solve the above-mentioned problem of capacitance leakage between the pixel electrode 150 and the scanning wiring 120, the present invention applies the same repairing technology as that of the foregoing embodiments, and uses a pulsed beam to form a hole in the position of the pixel electrode 150 corresponding to the particle or the hole 186. The opening 188 is used to avoid capacitance leakage between the pixel electrode 150 and the scanning wire 120 due to the existence of particles or holes 186 .

In addition, the method for repairing the thin film transistor array substrate of the present invention can also be applied to the repair of the storage capacitor on the common wiring. Please refer to FIGS. 5A and 5B respectively, wherein FIG. 5A shows a schematic diagram of a thin film transistor array substrate according to another preferred embodiment of the present invention, and FIG. 5B shows a cross-sectional view of line B-B' in FIG. 5A , and FIG. 5A and 5B are based on The same reference numerals denote the same elements as those in FIG. 1 , and their related descriptions refer to the aforementioned embodiments, and details are not repeated here. For example, the common wiring 122 is disposed under the pixel electrode 150 , and forms a storage capacitor with the gate insulating layer 182 , the protection layer 184 and the pixel electrode 150 . In addition, the particles or holes 186 are located in the gate insulating layer 182 and the protective layer 184 above the common wiring 122, and the pixel electrodes 150 of the upper layer and the common wiring 122 of the lower layer are caused by the existence of the particles or holes 186 to cause storage capacitance Situation of leakage.

Please refer to FIGS. 6A and 6B , which respectively show schematic diagrams of the TFT array substrates in FIGS. 5A and 5B after being repaired. The present invention also utilizes the pulse beam to form an opening 188 on the pixel electrode 150 at the position corresponding to the particle or the hole 186, thereby solving the leakage problem of the storage capacitor.

To sum up, the thin film transistor array substrate and the repairing method thereof of the present invention can solve problems such as abnormal conduction of pixel electrodes caused by residues, or leakage of storage capacitors caused by particles or holes. In addition, since the method for repairing the thin film transistor array substrate of the present invention uses pulsed beams to remove the film layer, it can provide precise control and fine-tuning of the repair energy, thereby improving the repair yield and the overall process quality of the panel. Rate. It is worth mentioning that the above-mentioned embodiments of the present invention are only examples, and those skilled in the art can apply the technology of the present invention to other fields of film processing after referring to the present invention. Therefore, within a reasonable range, the present invention can also be a thin film removal method suitable for thin film transistor array substrates, which is suitable for precise processing of film layers at any position on the thin film transistor array substrate to remove Remove specific parts of the film layer.

Although the present invention has been described above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of an invention shall be defined by the scope of the patent applied for.

Claims (3)

1. A method for repairing a thin film transistor array substrate, suitable for repairing a thin film transistor array substrate, wherein the thin film transistor array substrate has a plurality of pixel electrodes, and there is at least one residue between the pixel electrodes, so that the The pixel electrodes on both sides of the residue are connected to each other by the residue, and the method for repairing the thin film transistor array substrate includes: applying at least one pulsed laser beam with a pulse width between 1/20 second and 1/4 second on the residue to remove at least part of the residue and electrically charge the pixel electrodes on both sides of the residue Insulation, where the wavelength of the pulsed laser beam is between 300nm and 500nm. 2 . The method for repairing a TFT array substrate as claimed in claim 1 , wherein the pulse width of the pulsed laser beam is between 1/11 second and 1/4 second. 3. The method for repairing a TFT array substrate as claimed in claim 1, wherein the pulse width of the pulsed laser beam is 0.1 second.

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