CN103149755B - A kind of thin-film transistor LCD device and restorative procedure thereof - Google Patents
A kind of thin-film transistor LCD device and restorative procedure thereof Download PDFInfo
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- CN103149755B CN103149755B CN201110401565.7A CN201110401565A CN103149755B CN 103149755 B CN103149755 B CN 103149755B CN 201110401565 A CN201110401565 A CN 201110401565A CN 103149755 B CN103149755 B CN 103149755B
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 230000008439 repair process Effects 0.000 claims abstract description 43
- 239000012212 insulator Substances 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000004070 electrodeposition Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000003550 marker Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000001259 photo etching Methods 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 31
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- 239000004973 liquid crystal related substance Substances 0.000 description 17
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- 238000010586 diagram Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 230000007547 defect Effects 0.000 description 2
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- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of thin-film transistor LCD device and restorative procedure thereof, the gate line of this device is provided with and repairs mark, repair the light tight district that mark corresponds to the drain electrode position overlapping with grid or corresponds to pixel electrode; When repairing mark and corresponding to the light tight district of pixel electrode, correspond between the gate insulator of reparation mark and passivation layer and comprise light-shielding structure.In the process of repairing this display device bright spot, when repairing mark corresponding to the position that drain electrode and grid are overlapping, accurately can judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, success ratio is repaired in raising; When repairing the light tight district marking and correspond to pixel electrode, the generation of pixel edge light leakage phenomena can be avoided, and comprise light-shielding structure owing to corresponding to described reparation between the gate insulator of mark and passivation layer, so reparation mark there will not be the situation of light leak, and then improve reparation success ratio.
Description
Technical field
The invention belongs to field of liquid crystal display, particularly relate to a kind of thin-film transistor LCD device and restorative procedure thereof.
Background technology
At making thin-film transistor LCD device (TFT-LCD, Thin Film Transistor-LiquidCrystal Display) technological process in, due to quality, the cleanliness factor of environment, the problem such as the design of device itself and equipment itself of quality of forming film, the problem such as inevitably produce impurity particle, film comes off, and then cause picture element signal can not the problem such as driven, pixel defect.Any point of these problems in viewing area occurs, the display quality of thin-film transistor LCD device all can be caused greatly to reduce.Existing settling mode is generally to be made liquid crystal cell and after adding electrical testing, fleck defect laser preparing mode is being broken into dim spot.Country origin, publication number are that the patent document of US20070263134A1 discloses a kind of repairing method.
Concrete principle is, by gate line and pixel electrode short circuit, the pixel electrode most of the time is made to be in negative voltage, the larger voltage difference of absolute value is formed relative to the common electrode voltage on color membrane substrates, thus making liquid crystal be in rotation status all the time, thin-film transistor LCD device is shown as dim spot to reach the object of repairing bright spot.But, in liquid crystal indicator, because there is the existence of black matrix" color membrane substrates side, so laser bonding gate line can only weld from thin-film transistor array base-plate side with pixel electrode, generally comprise two kinds of mode: a, by laser bonding gate line and drain electrode protruding parts metal, make the short circuit metal of gate line and drain electrode protruding parts, finally realize the short circuit of gate line and pixel electrode; B, directly by laser bonding pixel electrode and gate line metal, finally realize the short circuit of gate line and pixel electrode.
With reference to figure 1 and Fig. 2, Fig. 1 is the front elevation of thin-film transistor LCD device thin-film transistor array base-plate, Fig. 2 is thin-film transistor array base-plate rear view, in figure, data line D1, D2 and gate lines G 1, G2 surround a pixel, pixel electrode 3 is had in a pixel, in a pixel, be provided with the common line C of U-shaped, the stain 4 and 5 in two regions that dotted line 601 and 602 encloses is respectively laser repairing point, includes drain electrode 1 and source electrode 2 in 601.Can adopt following two kinds of modes, a: in 601 regions, laser bonding reparation point 4 when repairing bright spot, the position making drain electrode 1 and grid overlapping and contiguous gate lines G 2 short circuit, to reach reparation object; B: the reparation point 5 in laser bonding 602 region, makes pixel electrode 3 and contiguous gate lines G 1 short circuit, to reach reparation object.
But the phenomenon of repairing failure all can appear in the method for existing reparation thin film transistor liquid crystal display device bright spot, and under some particular cases, the probability of repairing failure is comparatively large, and reparation success ratio is lower.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of thin-film transistor LCD device and restorative procedure thereof, repair the lower problem of success ratio to solve existing thin-film transistor LCD device.
This thin-film transistor LCD device, comprising:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the photic zone of pixel electrode and the light tight district of pixel electrode, described gate line is provided with and repairs mark, the described light tight district of repairing mark and corresponding to the drain electrode position overlapping with grid or corresponding to pixel electrode;
When described reparation mark corresponds to the light tight district of pixel electrode, comprise light-shielding structure corresponding to described reparation between the gate insulator of mark and passivation layer.
Preferably, when described reparation mark corresponds to drain electrode with the position that grid is overlapping, described reparation marks has the reparation marker graphic be inwardly recessed along gate line.
Preferably, when described reparation mark corresponds to drain electrode with the position that grid is overlapping, described reparation marks to be had along the outwardly reparation marker graphic of gate line.
Preferably, corresponding with described reparation marker graphic in described common line position has the figure be inwardly recessed along common line.
Preferably, when described reparation mark corresponds to the light tight district of pixel electrode, described reparation mark has the reparation marker graphic penetrating described gate line.
Preferably, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode are formed in same photoetching process simultaneously.
Preferably, the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island are formed in same photoetching process.
Preferably, described reparation is labeled as circular reparation mark.
Preferably, described reparation is labeled as the reparation mark of rectangle.
The restorative procedure of thin-film transistor LCD device described in a kind of above-mentioned any one, it is characterized in that, repair the position indicated described in laser bonding, the light tight district of the described gate line position overlapping with described drain electrode and grid or pixel electrode is electrically connected.Gate line due to thin-film transistor LCD device provided by the present invention is provided with and repairs mark, and the described light tight district of repairing mark and corresponding to the drain electrode position overlapping with grid or corresponding to pixel electrode; When described reparation mark corresponds to the light tight district of pixel electrode, comprise light-shielding structure corresponding to described reparation between the gate insulator of mark and passivation layer.
Visible, when described reparation mark corresponds to drain electrode with the position that grid is overlapping, in the process of reparation thin-film transistor LCD device bright spot, accurately can judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio; When described reparation mark corresponds to the light tight district of pixel electrode, in the process of repairing thin-film transistor LCD device bright spot, the generation of pixel edge light leakage phenomena can be avoided, and comprise light-shielding structure owing to corresponding to described reparation between the gate insulator of mark and passivation layer, so described reparation mark there will not be the situation of light leak, and then improve reparation success ratio.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is that existing thin-film transistor LCD device faces structural representation;
Fig. 2 is existing thin-film transistor LCD device back of the body TV structure schematic diagram;
Fig. 3 is the structural representation of existing thin-film transistor LCD device structure drain electrode after allowed band bias internal;
Fig. 4 is the back of the body TV structure schematic diagram of a kind of thin-film transistor LCD device provided by the present invention;
Fig. 5 is the local back TV structure schematic diagram of another kind of thin-film transistor LCD device provided by the present invention;
Fig. 6 is the back of the body TV structure schematic diagram of another thin-film transistor LCD device provided by the present invention;
Fig. 7 is the back of the body TV structure schematic diagram of another thin-film transistor LCD device provided by the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As described in background, all can there is the phenomenon of repairing failure in the method for existing reparation thin-film transistor LCD device bright spot, and under some particular cases, the probability of repairing failure is comparatively large, and reparation success ratio is lower.
Inventor finds after deliberation, for method a, as shown in Figure 3, if drain electrode 1 offsets relative to gate lines G 2 in allowed band, back of the body apparent time, drain electrode 1 is blocked by gate lines G 2 with the overlapping position of grid, cannot judge the position of source electrode 2, during reparation, repairing some 4-1 may be overlapping with source electrode 2, thus cause gate lines G 2 and source electrode 2 and all short circuits between 1 that drain, and the short circuit between gate lines G 2 and source electrode 2 is not wished to see, causes repairing failure; For method b, as shown in Figure 2, in the light tight district of pixel due to blocking by gate lines G 1, cannot judge specifically to repair position, reparation success ratio is lower, the marginal position that point 5 is positioned at pixel transmittance district if repair, then often occur that the phenomenon of pixel edge light leak occurs, cause repairing quality to decline, cause repairing failure, cause the time of production and the waste of cost.
The invention discloses a kind of thin-film transistor LCD device, comprising:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the photic zone of pixel electrode and the light tight district of pixel electrode, it is characterized in that:
Described gate line is provided with and repairs mark, the described light tight district of repairing mark and corresponding to the drain electrode position overlapping with grid or corresponding to pixel electrode;
When described reparation mark corresponds to the light tight district of pixel electrode, comprise light-shielding structure corresponding to described reparation between the gate insulator of mark and passivation layer.
As can be seen from the above scheme, the gate line due to thin-film transistor LCD device provided by the present invention is provided with and repairs mark, and the described light tight district of repairing mark and corresponding to the drain electrode position overlapping with grid or corresponding to pixel electrode; When described reparation mark corresponds to the light tight district of pixel electrode, comprise light-shielding structure corresponding to described reparation between the gate insulator of mark and passivation layer.
So, when described reparation mark corresponds to drain electrode with the position that grid is overlapping, in the process of reparation thin-film transistor LCD device bright spot, accurately can judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio; When described reparation mark corresponds to the light tight district of pixel electrode, in the process of repairing thin-film transistor LCD device bright spot, the generation of pixel edge light leakage phenomena can be avoided, and comprise light-shielding structure owing to corresponding to described reparation between the gate insulator of mark and passivation layer, so described reparation mark there will not be the situation of light leak, and then improve reparation success ratio.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Embodiment one:
Present embodiment discloses a kind of thin-film transistor LCD device, comprising:
Substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the photic zone of pixel electrode and the light tight district of pixel electrode, described gate line is provided with and repairs mark, described mark of repairing corresponds to the drain electrode position overlapping with grid.
Concrete setting is as shown in Figure 4:
Substrate (not shown), described substrate is the substrate of glass substrate or other materials.
Gate lines G 11, G12 and common line C11, described gate lines G 11, G12 and common line C11 are arranged on the first metal layer, and described the first metal layer is arranged on the surface of the substrate.
Concrete, described common line C11 is U-shaped in each pixel region corresponding to it, and by the first metal layer conducting on the direction parallel with gate lines G 11 or G12, described gate line is provided with grid, and described gate lines G 12 being provided with reparation mark X, described reparation mark has the reparation marker graphic of the rectangle be inwardly recessed along gate lines G 12.
Gate insulator (not shown), described gate insulator is arranged on the first metal layer on the surface, and the gate insulator above the grid being positioned at described gate line is provided with silicon island (not shown) on the surface.
Second metal level, described second metal level is arranged on gate insulator on the surface, and be provided with data line L11 and L12, source S 11 and drain D 11 in described second metal level, described source S 11 and data line L11 are an one-piece construction, the part that described drain D 11 is overlapping with grid and source S 11 are all arranged on silicon island on the surface, and described silicon island and grid, source S 11, drain D 11 together form TFT (ThinFilm Transistor, thin film transistor (TFT)), a plurality of data lines and many gate lines determine multiple pixel region.
Passivation layer (not shown), described passivation layer is arranged on the second layer on surface of metal, and is provided with contact hole in described passivation layer.
3rd metal level, described 3rd metal level is arranged in passivation layer surface, be preferably transparent indium tin oxide layer, and pixel electrode P11 is provided with in described 3rd metal level, described pixel electrode is electrically connected with drain D 11 by contact hole, in addition, a part of described pixel electrode P11 is positioned at photic zone, be called the photic zone of pixel electrode, another part of described pixel electrode P11 is positioned at light tight district, be called the light tight district of pixel electrode, the light tight district of pixel electrode of the present invention specifically refers to pixel electrode P11 and the overlapping region of gate lines G 11.
Concrete, the described mark X that repairs corresponds to drain D 11 position overlapping with grid, there is the reparation marker graphic of rectangle, circle can also be had or other can play the reparation marker graphic of marked effect, it should be noted that, described specification of repairing mark X needs moderate, can not the too little operating personnel of making not easily recognize, more can not be too large and affect the display effect of liquid crystal indicator entirety.
More specifically, the described mark X that repairs has the reparation marker graphic (as shown in Figure 4) that is inwardly recessed along gate lines G 12 or along the outwardly reparation marker graphic of gate lines G 12.
As shown in Figure 5, drain D 11 position overlapping with grid is corresponded to and there is the reparation marker graphic along gate lines G 12 is outwardly at the described mark X-1 that repairs, position corresponding with described reparation marker graphic on described common line C11 is provided with the figure be inwardly recessed along common line C11, to prevent described gate lines G 12 and common line C11 conducting.
Gate line due to thin-film transistor LCD device provided by the present invention is provided with and repairs mark, and described mark of repairing corresponds to the drain electrode position overlapping with grid, so, in the process of repairing thin-film transistor LCD device bright spot, accurately can judge the position of repairing point, to avoid the generation of short circuit phenomenon between gate line and source electrode, improve and repair success ratio.
Embodiment two:
The present embodiment and embodiment one difference are, described mark of repairing corresponds to the light tight district of pixel electrode, and correspond to described reparation between the gate insulator of mark and passivation layer and comprise light-shielding structure.
As shown in Figure 6, Fig. 6-a is vertical view, repair the light tight district that mark X1 corresponds to pixel electrode P11, and described reparation marks the reparation marker graphic that X1 has the circle penetrating described gate lines G 11, namely laser welding technology can be utilized mark is being repaired by welded together for the light tight district of gate lines G 11 and pixel electrode P11 in substrate side, the preferred laser welding technology that can utilize in substrate side is repairing mark by welded together for the marginal position of gate lines G 11 and pixel electrode P11, described reparation marker graphic can also for rectangle or other can play the figure of marked effect, light-shielding structure (not shown) is comprised between the gate insulator corresponding to described reparation mark X1 and passivation layer, Fig. 6-b is the sectional view along A-A ' line, shown in figure, substrate 11, be arranged on the gate lines G 11 on substrate 11 surface, described gate lines G 11 is repaired mark X1 and is divided into two parts, be arranged on the gate insulator 12 on gate lines G 11 and substrate 11 surface, be arranged on gate insulator 12 on the surface and correspond to described repair mark X1 light-shielding structure Y, be arranged on the passivation layer 13 on light-shielding structure Y and gate insulator 12 surface, be arranged on the light tight district of the pixel electrode P11 on passivation layer 13 surface.
It should be noted that, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode are formed in same photoetching process simultaneously, or the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island are formed in same photoetching process, or described light-shielding structure is that data line making material makes superposing of material with silicon island, and is formed in the Twi-lithography process forming described data line and silicon island.
Mark X1 is repaired due to the gate lines G 11 of thin-film transistor LCD device provided by the present invention being provided with, and described reparation marks the light tight district that X1 corresponds to pixel electrode P11, comprise light-shielding structure Y corresponding to described reparation between the gate insulator 12 of mark X1 and passivation layer 13.
So, if there is bright spot in this pixel of thin-film transistor LCD device, then in the process of repairing bright spot, the generation of this pixel edge light leakage phenomena can be avoided, and comprise light-shielding structure Y owing to corresponding to described reparation between the gate insulator 12 of mark X1 and passivation layer 13, repair the situation that mark X1 place there will not be light leak so described, and then improve reparation success ratio.
In addition, because light-shielding structure Y and data line or silicon island are formed in same photoetching process, so the formation of light-shielding structure Y only need change the mask plate structure used by photoetching process, for making liquid crystal indicator itself, any additional step can't be increased.
Embodiment three:
The present embodiment and above-described embodiment difference are, as shown in Figure 7, liquid crystal indicator disclosed in the present embodiment comprises the first reparation mark X11 and second and repairs mark X12, and corresponds to described second and repair between the mark gate insulator of X12 and passivation layer and comprise light-shielding structure.
Described first repairs mark X11 and repairs described in embodiment one that to mark X identical, and described reparation marks X12 and repairs described in embodiment two that to mark X1 identical.
Visible, in the process of repairing thin-film transistor LCD device bright spot, both the position of repairing point can accurately have been judged, to avoid the generation of short circuit phenomenon between gate lines G 12 and source S 11, improve and repair success ratio, the generation of pixel edge light leakage phenomena can be avoided again, and comprise light-shielding structure owing to repairing between the gate insulator of mark X12 and passivation layer corresponding to described second, so described second repairs the situation marking X12 place and there will not be light leak, and then improve reparation success ratio.
So, liquid crystal indicator described in the present embodiment is in the process of repairing bright spot, if because of some unpredictable factor, when utilizing a kind of method to occur the problem of repairing failure (except the situation of gate line and source short), still another restorative procedure can be utilized to repair bright spot, and overall reparation success ratio increase.
Embodiment four:
Present embodiment discloses the restorative procedure of the liquid crystal indicator bright spot disclosed in a kind of embodiment one, the method comprises:
Electrical testing is added to liquid crystal indicator, determine the pixel at bright spot place, as shown in Figure 4, the position that mark X indicates is repaired described in laser bonding, the position that described gate lines G 12 is overlapping with grid with described drain D 11 is welded together, make gate lines G 12 and drain D 11 short circuit, finally realize the short circuit of gate lines G 12 and pixel electrode P11.
Owing to first determining the welding position needed for reparation, even if so skew as shown in Figure 3 appears in drain D 11, when laser bonding, also can not occur, by phenomenon welded together to gate lines G 12 and source S 11, to improve and be welded into power.
The present embodiment also discloses the restorative procedure of the liquid crystal indicator bright spot disclosed in a kind of embodiment two, and the method comprises:
Electrical testing is added to liquid crystal indicator, determine the pixel at bright spot place, as shown in Fig. 6-a, described in laser bonding, repair the position that mark institute X1 indicates, by welded together with the light tight district of described pixel electrode P11 for described gate lines G 11, make gate lines G 11 and pixel electrode P11 short circuit.
Owing to first determining the welding position needed for reparation, so the position in the light tight district of pixel electrode P11 can be determined under the blocking of gate lines G 11, make solder joint away from the photic zone of pixel electrode P11, avoid the generation of pixel edge light leakage phenomena, and comprise light-shielding structure owing to corresponding to described reparation between the gate insulator of mark X1 and passivation layer, repair the situation that mark X1 place there will not be light leak so described, and then improve reparation success ratio.
The present embodiment again discloses the restorative procedure of the liquid crystal indicator bright spot disclosed in a kind of embodiment three, and the method comprises:
Electrical testing is added to liquid crystal indicator, determine the pixel at bright spot place, as shown in Figure 7, described in laser bonding, first repairs the position marking X11 or second reparation mark X12 and indicate, corresponding, the position that described gate lines G 12 is overlapping with grid with described drain D 11 is welded together, make gate lines G 12 and drain D 11 short circuit, finally realize the short circuit of gate lines G 12 and pixel electrode P11, or by welded together with the light tight district of described pixel electrode P11 for described gate lines G 11, make gate lines G 11 and pixel electrode P11 short circuit.
Visible, in the process of repairing thin-film transistor LCD device bright spot, both the position of repairing point can accurately have been judged, to avoid the generation of short circuit phenomenon between gate lines G 12 and source S 11, improve and repair success ratio, the generation of pixel edge light leakage phenomena can be avoided again, and comprise light-shielding structure owing to repairing between the gate insulator of mark X12 and passivation layer corresponding to described second, so described second repairs the situation marking X12 place and there will not be light leak, and then improve reparation success ratio.
So, liquid crystal indicator described in the present embodiment is in the process of repairing bright spot, if because of some unpredictable factor, when utilizing a kind of method to occur the problem of repairing failure (except the situation of gate line and source short), still another restorative procedure can be utilized to repair bright spot, and overall reparation success ratio increase.
Embodiment five:
Present embodiment discloses the method for making of the thin-film transistor LCD device array substrate that a kind of above-described embodiment provides, this method for making comprises:
Step S1, provide substrate, described substrate surface forms the first metal layer, and the first metal layer is etched, form gate line and common line.
Concrete, described substrate is the substrate of glass substrate or other materials.
Described substrate surface forms gate line and common line specifically comprises:
Described substrate surface adopt plasma sputtering mode form the first metal layer, namely first described substrate is put into reaction chamber, energetic particle hits has highly purified target material solid plate, by physical process knock-on atom, these are passed vacuum by knocking-on atom, finally be deposited on substrate surface, obtain the first metal layer.But the formation of the first metal layer is not limited in plasma sputtering mode, other physical vapor deposition mode can also be utilized to be formed, be not described in detail at this.And then photoetching is carried out to the first metal layer, i.e. spin coating photoresist on described the first metal layer, form photoresist layer, the mask with gate line and common line pattern is utilized to expose, photoresist layer is formed gate line and common line pattern, after development, photoresist layer is formed gate line and common line figure, there is the photoresist layer of gate line and common line figure for mask, obtain gate line and common line through the technique such as dry etching or wet etching, described gate line is provided with grid.
It should be noted that, " gate line and common line pattern " described in the present embodiment is gate line and the common line pattern of two dimension on photoresist layer surface, and area of the pattern is only limited to photoresist layer surface and not to surperficial downward-extension, does not have three-dimensional shape; Described " gate line and common line figure ", for having the three-dimensional picture of three-dimensional shape, the thickness of this figure is the thickness of photoresist layer.
Step S2, on gate line, common line and substrate surface, form gate insulator, and form amorphous silicon layer on the surface at gate insulator, described amorphous silicon layer is etched, form silicon island.
Concrete, described gate line, common line and substrate surface adopt chemical vapor deposition mode form gate insulator, namely reaction chamber put into by the substrate first surface being provided with gate line and common line, gas precursors is transferred to substrate surface and carries out suction-operated and reaction, then the accessory substance of reaction is removed, obtain gate insulator.But the formation of gate insulator is not limited in chemical vapor deposition mode, the modes such as other physical vapor deposition can also be utilized to be formed, be not described in detail at this.Described gate insulator is SiN
xlayer, and form amorphous silicon layer by identical technique on the surface at gate insulator, photoetching is carried out to described amorphous silicon layer, in the position formation silicon island corresponding with grid.
Step S3, form the second metal level on the surface in silicon island and gate insulator, and the second metal level is etched, form data line, source electrode and drain electrode.
Concrete, adopt physical vapor deposition process to form the second metal level on the surface in described silicon island and gate insulator, afterwards, adopt photoetching process to form data line, source electrode and drain electrode in described second metal level, described data line and source electrode are an one-piece construction.
Step S4, on described data line, source electrode, drain and gate surface of insulating layer, form passivation layer, described passivation layer is etched, form contact hole.
Concrete, adopt chemical vapor deposition method to form passivation layer on the surface at described data line, common line and gate insulator, afterwards, adopt photoetching process to form contact hole in described passivation layer, described contact hole is positioned at the passivation layer of drain electrode top.
Step S5, in described passivation layer surface formed the 3rd metal level, described 3rd metal level is etched, formed pixel electrode.
Concrete, physical vapor deposition process is adopted to form the 3rd metal level in described passivation layer surface, described 3rd metal level is transparent metal layer, make material and be preferably tin indium oxide, afterwards, adopt photoetching process to form pixel electrode on the 3rd metal level, described pixel electrode is by contact hole and drain electrode electrical connection.
It should be noted that, if what produce is thin-film transistor LCD device disclosed in embodiment one, then the position described gate line corresponding to the drain electrode position overlapping with grid is provided with to repair and marks, if what produce is thin-film transistor LCD device disclosed in embodiment two, the position then described gate line corresponding to the light tight district of pixel electrode is provided with repairs mark, and correspond to described reparation between the gate insulator of mark and passivation layer and comprise light-shielding structure, described light-shielding structure and data line or silicon island are formed in same photoetching process, if what produce is thin-film transistor LCD device disclosed in embodiment three, the position then described gate line corresponding to the drain electrode position overlapping with grid is provided with the first reparation and marks, and the position described gate line corresponding to the light tight district of pixel electrode is provided with the second reparation mark, and correspond to described second repair mark gate insulator and passivation layer between comprise light-shielding structure, described light-shielding structure and data line or silicon island are formed in same photoetching process, or described light-shielding structure is formed in the Twi-lithography process forming data line and silicon island.
Visible, the production of the thin-film transistor LCD device disclosed in any embodiment can not increase any additional step, namely can not increase production cost.
In this instructions, various piece adopts the mode of going forward one by one to describe, and what each some importance illustrated is the difference with other parts, between various piece identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a thin-film transistor LCD device, comprise: substrate, gate line, common line, gate insulator, silicon island, data line, source electrode, drain electrode, passivation layer and pixel electrode, described pixel electrode comprises the photic zone of pixel electrode and the light tight district of pixel electrode, it is characterized in that:
Described gate line is provided with and repairs mark, the described light tight district of repairing mark and corresponding to the drain electrode position overlapping with grid or corresponding to pixel electrode;
When described reparation mark corresponds to the light tight district of pixel electrode, comprise light-shielding structure corresponding to described reparation between the gate insulator of mark and passivation layer.
2. thin-film transistor LCD device according to claim 1, is characterized in that, when described repair mark correspond to drain electrode with the position that grid is overlapping time, described reparation mark has the reparation marker graphic be inwardly recessed along gate line.
3. thin-film transistor LCD device according to claim 1, is characterized in that, when described repair mark correspond to drain electrode with the position that grid is overlapping time, described reparation mark has along the outwardly reparation marker graphic of gate line.
4. thin-film transistor LCD device according to claim 3, it is characterized in that, position corresponding with described reparation marker graphic in described common line has the figure be inwardly recessed along common line.
5. thin-film transistor LCD device according to claim 1, is characterized in that, when described repair mark correspond to the light tight district of pixel electrode time, described reparation mark has the reparation marker graphic penetrating described gate line.
6. thin-film transistor LCD device according to claim 5, it is characterized in that, the making material of described light-shielding structure is identical with the making material of data line, and described light-shielding structure and data line, source electrode, drain electrode are formed in same photoetching process simultaneously.
7. thin-film transistor LCD device according to claim 5, it is characterized in that, the making material of described light-shielding structure is identical with the making material of silicon island, and described light-shielding structure and silicon island are formed in same photoetching process.
8. thin-film transistor LCD device according to claim 1, is characterized in that, described reparation is labeled as circular reparation mark.
9. thin-film transistor LCD device according to claim 1, is characterized in that, described reparation is labeled as the reparation mark of rectangle.
10. the restorative procedure of thin-film transistor LCD device described in an any one of claim 1-9, it is characterized in that, repair the position indicated described in laser bonding, the light tight district of the described gate line position overlapping with described drain electrode and grid or pixel electrode is electrically connected.
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| CN103293794B (en) * | 2012-02-22 | 2015-10-21 | 上海中航光电子有限公司 | A kind of thin-film transistor LCD device and restorative procedure thereof |
| JP6289497B2 (en) * | 2013-11-14 | 2018-03-07 | 堺ディスプレイプロダクト株式会社 | Circuit board and display device |
| CN106054435B (en) * | 2016-08-18 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of pair of box substrate, liquid crystal display panel and its spot removing method |
| KR102693166B1 (en) | 2016-12-02 | 2024-08-09 | 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Display panel and method of reparing the same |
| CN109613772B (en) * | 2019-01-03 | 2021-12-10 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method and repairing method thereof and display device |
| CN110620105B (en) * | 2019-10-22 | 2021-06-29 | 成都中电熊猫显示科技有限公司 | Array substrate, manufacturing method thereof and detection method of pattern deviation of array substrate |
| CN111048528A (en) * | 2019-12-19 | 2020-04-21 | 信利(仁寿)高端显示科技有限公司 | A structure and method for repairing electrostatic damage of thin film transistor array substrate |
| CN112599694B (en) * | 2020-12-10 | 2022-11-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114815425B (en) * | 2022-05-07 | 2023-11-28 | Tcl华星光电技术有限公司 | Display panel and manufacturing method thereof |
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| CN101866084A (en) * | 2009-04-15 | 2010-10-20 | 上海天马微电子有限公司 | Pixel unit, liquid crystal display device and defect repairing method |
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