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CN102566161B - Pixel structure and display panel - Google Patents

Pixel structure and display panel Download PDF

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CN102566161B
CN102566161B CN201210008514.2A CN201210008514A CN102566161B CN 102566161 B CN102566161 B CN 102566161B CN 201210008514 A CN201210008514 A CN 201210008514A CN 102566161 B CN102566161 B CN 102566161B
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pixel structure
opening
pixel
electrode
substrate
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CN102566161A (en
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曹正翰
卓庭毅
邱钟毅
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Samsung Display Co Ltd
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AU Optronics Corp
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Abstract

The invention provides a pixel structure and a display panel. The scanning lines and the data lines are positioned on the substrate. The active element is electrically connected with the scanning line and the data line. The capacitance electrode line is positioned on the substrate. The upper electrode pattern is located above the capacitance electrode line, wherein the upper electrode pattern is provided with a first opening which exposes the capacitance electrode line. The pixel electrode is electrically connected with the active element and covers the capacitance electrode line and the upper electrode pattern, wherein the pixel electrode comprises a middle part and a plurality of branch parts connected with the middle part, and the middle part is provided with a second opening which exposes the first opening. The invention can increase the area of the electrode and reduce the area occupied by the alignment slits in the pixel electrode, thereby reducing the problem of uneven display caused by inconsistent width of the alignment slits due to the lithography etching process.

Description

像素结构及显示面板Pixel structure and display panel

本申请是申请号为“201010001606.9”、申请日为“2010年1月5日”、发明创造名称为“像素结构及显示面板”的专利申请的分案申请。This application is a divisional application of the patent application with the application number "201010001606.9", the application date is "January 5, 2010", and the invention title is "pixel structure and display panel".

技术领域technical field

本发明是有关于一种像素结构及具有此像素结构的显示面板,且特别是有关于一种采用聚合物稳定配向(Ploymer Stabilized Alignment,PSA)技术的像素结构及具有此像素结构的显示面板。The present invention relates to a pixel structure and a display panel with the pixel structure, and in particular to a pixel structure using Polymer Stabilized Alignment (PSA) technology and a display panel with the pixel structure.

背景技术Background technique

在显示器的发展上,随着光电技术与半导体制造技术的进步,具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性的液晶显示器已逐渐成为市场的主流。In the development of displays, with the advancement of optoelectronic technology and semiconductor manufacturing technology, liquid crystal displays with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market.

液晶显示器包括了背光模块以及液晶显示面板,而传统液晶显示面板是由两基板以及填于两基板之间的一液晶层所构成。一般而言,在液晶显示面板的制造过程中,都会在两基板上形成配向膜,以使液晶分子具有特定的排列。现有形成配向膜的方法是先涂布配向材料之后,再对配向材料进行配向工艺。而配向工艺可以分成接触式配向工艺以及非接触式配向工艺。虽然非接触式配向工艺可解决接触式磨擦配向产生的静电问题及粒子(particle)污染等问题,但是其往往会发生配向表面的锚定能不足的问题。而如果配向表面的锚定能不足,将往往导致液晶显示面板的显示品质不佳。The liquid crystal display includes a backlight module and a liquid crystal display panel, while a traditional liquid crystal display panel is composed of two substrates and a liquid crystal layer filled between the two substrates. Generally speaking, during the manufacturing process of the liquid crystal display panel, an alignment film is formed on the two substrates to make the liquid crystal molecules have a specific arrangement. The existing method for forming an alignment film is to apply an alignment material first, and then perform an alignment process on the alignment material. The alignment process can be divided into a contact alignment process and a non-contact alignment process. Although the non-contact alignment process can solve problems such as static electricity and particle contamination caused by contact friction alignment, it often suffers from the problem of insufficient anchoring energy of the alignment surface. However, if the anchoring energy of the alignment surface is insufficient, the display quality of the liquid crystal display panel will often be poor.

为解决上述问题,目前已提出一种聚合物稳定配向(Ploymer Stabilized Alignment,PSA)的技术。此技术乃是在液晶材料中掺入适当浓度的单体化合物(monomer)并且震荡均匀。接着,将混合后的液晶材料置于加热器上加温到达等向性(Isotropy)状态。然后,当液晶混合物降温25℃室温时,液晶混合物会回到向列型(nematic)状态。此时将液晶混合物注入至液晶盒并施予电压。当施加电压使液晶分子排列稳定时,则使用紫外光或加热的方式让单体化合物进行聚合反应以成聚合物层,由此达到稳定配向的目的。In order to solve the above problems, a polymer stabilized alignment (Polymer Stabilized Alignment, PSA) technology has been proposed. This technology is to mix monomer compound (monomer) of appropriate concentration in the liquid crystal material and vibrate evenly. Next, the mixed liquid crystal material is placed on a heater and heated to reach an isotropic (Isotropy) state. Then, when the temperature of the liquid crystal mixture is lowered to 25° C. to room temperature, the liquid crystal mixture will return to a nematic state. At this time, the liquid crystal mixture is injected into the liquid crystal cell and a voltage is applied. When a voltage is applied to stabilize the alignment of liquid crystal molecules, ultraviolet light or heating is used to polymerize monomer compounds to form a polymer layer, thereby achieving the purpose of stable alignment.

一般来说,在PSA的液晶显示面板中,会在像素结构的像素电极中形成配向狭缝,以使液晶分子产生特定的配向方向。而像素电极中的配向狭缝越多虽可以越加精确控制液晶分子的配向,但配向狭缝所占面积越多也同时会增加显示不均匀(mura)现象,这是主要因为配向狭缝的微影刻蚀程序造成狭缝宽度不一致所导致。更详细来说,在配向狭缝的微影刻蚀程序中,在曝光装置的光学镜组之间的交界处往往会因为该处的曝光条件与非交界处的曝光条件不完全一致,因此导致该处的狭缝宽度与其他狭缝宽度不一致。因而造成显示面板在这两处的亮度不同,而导致显示不均匀(mura)问题。Generally, in the liquid crystal display panel of the PSA, an alignment slit is formed in the pixel electrode of the pixel structure, so that the liquid crystal molecules have a specific alignment direction. The more alignment slits in the pixel electrode, the more precise the alignment of the liquid crystal molecules can be controlled, but the larger the area occupied by the alignment slits will also increase the display non-uniformity (mura), which is mainly because of the alignment slits. The lithography process causes the slit width to be inconsistent. In more detail, in the lithography process of the alignment slit, the junction between the optical mirror groups of the exposure device is often not completely consistent with the exposure conditions at the non-junction, thus causing The slit width here is inconsistent with other slit widths. As a result, the brightness of the display panel at these two locations is different, resulting in the problem of display non-uniformity (mura).

发明内容Contents of the invention

本发明提供一种像素结构以及具有此像素结构的显示面板,其可以减少传统使用PSA技术的像素结构及显示面板中因所形成的配向狭缝宽度不一致而导致显示不均匀的问题。The present invention provides a pixel structure and a display panel with the pixel structure, which can reduce the problem of uneven display caused by the inconsistent width of the formed alignment slits in the traditional pixel structure and display panel using PSA technology.

本发明提出一种像素结构,其包括扫描线以及数据线、有源元件(active device)、电容电极线、上电极图案以及像素电极。扫描线及数据线位于基板上。有源元件与扫描线以及数据线电连接。电容电极线位于基板上。上电极图案位于电容电极线的上方,其中上电极图案中具有第一开口,其暴露出电容电极线。像素电极与有源元件电连接并覆盖住电容电极线以及上电极图案,其中像素电极包括中间部以及与所述中间部连接的多个分支部,且中间部中具有第二开口,其暴露出第一开口,其中,所述上电极图案包括一第一部分以及一第二部分,其中所述第一部分与所述像素电极电连接,且所述第一开口位于所述第二部分中;The present invention proposes a pixel structure, which includes scan lines and data lines, active devices, capacitor electrode lines, upper electrode patterns, and pixel electrodes. The scan line and the data line are located on the substrate. The active elements are electrically connected to the scan lines and the data lines. Capacitive electrode lines are located on the substrate. The upper electrode pattern is located above the capacitor electrode lines, wherein the upper electrode pattern has a first opening, which exposes the capacitor electrode lines. The pixel electrode is electrically connected to the active element and covers the capacitor electrode line and the upper electrode pattern, wherein the pixel electrode includes a middle part and a plurality of branch parts connected to the middle part, and there is a second opening in the middle part, which exposes A first opening, wherein the upper electrode pattern includes a first portion and a second portion, wherein the first portion is electrically connected to the pixel electrode, and the first opening is located in the second portion;

其中,像素电极的中间部包括:一水平延伸部,其对应设置在电容电极线的上方;一垂直延伸部,其与水平延伸部垂直设置;一块状部,其位于水平延伸部与垂直延伸部的交叉处;所述块状部与所述水平延伸部及所述垂直延伸部之间具有一间隙;在所述块状部与所述水平延伸部之间所述间隙中以及所述块状部与所述垂直延伸部之间的所述间隙中更包括多个次分支部;Wherein, the middle part of the pixel electrode includes: a horizontal extension part, which is correspondingly arranged above the capacitance electrode line; a vertical extension part, which is vertically arranged with the horizontal extension part; part; there is a gap between the block part and the horizontal extension part and the vertical extension part; in the gap between the block part and the horizontal extension part and the block The gap between the shape portion and the vertical extension portion further includes a plurality of secondary branch portions;

或者,其中,所述像素电极的相邻两分支部之间具有一狭缝,且所述狭缝的长度不完全相同,包括自中间部延伸至像素结构边缘的狭缝,及未延伸至像素结构边缘的狭缝;所述未延伸至像素结构边缘的狭缝两侧的分支部有局部相连在一起。Or, wherein, there is a slit between two adjacent branch parts of the pixel electrode, and the lengths of the slits are not completely the same, including the slit extending from the middle part to the edge of the pixel structure, and the slit not extending to the pixel structure. The slit at the edge of the structure; the branches on both sides of the slit that do not extend to the edge of the pixel structure are partially connected together.

本发明提出一种显示面板,其包括第一基板、第二基板以及位于第一基板与第二基板之间的显示介质。第一基板上具有多个像素结构,且每一像素结构如上所述。第二基板位于第一基板的对向,其中第二基板上包括设置有电极层。The present invention provides a display panel, which includes a first substrate, a second substrate, and a display medium between the first substrate and the second substrate. There are multiple pixel structures on the first substrate, and each pixel structure is as above. The second substrate is located opposite to the first substrate, wherein the second substrate includes an electrode layer.

基于上述,由于本发明的像素结构中发上电极图案中具有第一开口,且像素电极的中间部具有第二开口。当于进行PSA技术的熟化程序时(curing process),于电容电极线所施加的高电压可经第一开口与第二开口而对第二开口上方的液晶分子产生配向作用,进而使该处的液晶分子达到预定的预倾角。如此一来,便可以增加电极的面积并减少像素电极中的配向狭缝所占的面积,进而减少因配向狭缝的微影刻蚀程序造成其宽度不一致所导致的显示不均匀(mura)问题。Based on the above, in the pixel structure of the present invention, there is a first opening in the upper electrode pattern, and a second opening in the middle of the pixel electrode. When performing the curing process of PSA technology, the high voltage applied to the capacitor electrode line can generate an alignment effect on the liquid crystal molecules above the second opening through the first opening and the second opening, and then make the liquid crystal molecules at the position The liquid crystal molecules reach a predetermined pretilt angle. In this way, the area of the electrode can be increased and the area occupied by the alignment slit in the pixel electrode can be reduced, thereby reducing the display unevenness (mura) problem caused by the inconsistent width of the alignment slit due to the lithographic etching process .

附图说明Description of drawings

图1是根据本发明一实施例的显示面板的剖面示意图;1 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention;

图2A是根据本发明一实施例的像素结构的上视示意图;FIG. 2A is a schematic top view of a pixel structure according to an embodiment of the present invention;

图2B是图2A的像素结构中的像素电极的示意图;2B is a schematic diagram of a pixel electrode in the pixel structure of FIG. 2A;

图3是沿着图2A的剖面线I-I’的剖面示意图;Fig. 3 is a schematic sectional view along the section line I-I' of Fig. 2A;

图4A是根据本发明一实施例的像素结构的上视示意图;FIG. 4A is a schematic top view of a pixel structure according to an embodiment of the present invention;

图4B是图4A的像素结构中的像素电极的示意图;FIG. 4B is a schematic diagram of a pixel electrode in the pixel structure of FIG. 4A;

图5A是根据本发明一实施例的像素结构的上视示意图;FIG. 5A is a schematic top view of a pixel structure according to an embodiment of the present invention;

图5B是图5A的像素结构中的像素电极的示意图;FIG. 5B is a schematic diagram of a pixel electrode in the pixel structure of FIG. 5A;

图6A是根据本发明一实施例的像素结构的上视示意图;FIG. 6A is a schematic top view of a pixel structure according to an embodiment of the present invention;

图6B是图6A的像素结构中的像素电极的示意图。FIG. 6B is a schematic diagram of a pixel electrode in the pixel structure of FIG. 6A .

附图标号:Figure number:

100:第一基板100: first substrate

102:像素阵列层102: Pixel array layer

110:第二基板110: second substrate

112:电极层112: electrode layer

150:显示介质150: display media

SL:扫描线SL: scan line

DL:数据线DL: data line

T:有源元件T: active component

G:栅极G: grid

S:源极S: source

D:漏极D: Drain

CH:通道层CH: channel layer

P:像素电极P: pixel electrode

C1、C2:接触窗C1, C2: contact window

202:电容电极线202: Capacitive electrode wire

204:上电极图案204: upper electrode pattern

204a,204b:第一部分、第二部分204a, 204b: first part, second part

205:遮蔽线205: Shielding line

206:第一开口206: First opening

208:中间部208: middle part

208a:水平延伸部208a: Horizontal extension

208b:垂直延伸部208b: vertical extension

208c:块状部208c: Blocky part

210:分支部210: Branch Department

210’:次分支部210': Secondary branch

210a、210b、210c、210d:配向狭缝210a, 210b, 210c, 210d: alignment slits

211、214:绝缘层211, 214: insulating layer

212:第二开口212: Second opening

S:空隙S: space

具体实施方式Detailed ways

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

图1是根据本发明一实施例的显示面板的剖面示意图。请先参照图1,本实施例的显示面板包括第一基板100、第二基板110以及位于第一基板100与第二基板110之间的显示介质150。FIG. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the invention. Please refer to FIG. 1 , the display panel of this embodiment includes a first substrate 100 , a second substrate 110 and a display medium 150 located between the first substrate 100 and the second substrate 110 .

第一基板100的材质可为玻璃、石英、有机聚合物或是金属等等。第一基板100上包括设置有像素阵列层102,所述像素阵列层102是由多个像素结构所构成。而有关像素阵列层102中的像素结构将于后续段落作详细说明。The material of the first substrate 100 can be glass, quartz, organic polymer or metal and so on. A pixel array layer 102 is disposed on the first substrate 100, and the pixel array layer 102 is composed of a plurality of pixel structures. The pixel structure in the pixel array layer 102 will be described in detail in the following paragraphs.

第二基板110的材质可为玻璃、石英或有机聚合物等等。第二基板110上包括设置有一电极层112。在本实施例中,电极层112为透明导电层,其材质包括金属氧化物,例如是铟锡氧化物或者是铟锌氧化物。电极层112是全面地覆盖于第二基板110上。另外,根据本发明的实施例,电极层112上并未设置有配向图案(例如配向凸起或配向狭缝)。此外,根据本发明的另一实施例,第二基板110上可更包括设置有彩色滤光阵列(未绘示),其包括红、绿、蓝色滤光图案。另外,第二基板110上更可包括设置遮光图案层(未绘示),其又可称为黑矩阵,其设置于彩色滤光阵列的图案之间。The material of the second substrate 110 can be glass, quartz or organic polymer and so on. An electrode layer 112 is disposed on the second substrate 110 . In this embodiment, the electrode layer 112 is a transparent conductive layer, and its material includes metal oxide, such as indium tin oxide or indium zinc oxide. The electrode layer 112 completely covers the second substrate 110 . In addition, according to the embodiment of the present invention, no alignment pattern (such as alignment protrusions or alignment slits) is disposed on the electrode layer 112 . In addition, according to another embodiment of the present invention, the second substrate 110 may further include a color filter array (not shown), which includes red, green and blue filter patterns. In addition, the second substrate 110 may further include a light-shielding pattern layer (not shown), which may also be called a black matrix, which is disposed between the patterns of the color filter array.

显示介质150包括液晶分子。由于本实施例的显示面板为使用PSA技术的显示面板,因此在显示介质150中除了液晶分子之外,还包括单体化合物。换言之,在此显示面板尚未进行单体化合物的熟化程序时,显示介质150中包含有液晶分子以及单体化合物。当此显示面板于进行单体化合物的熟化程序时,单体化合物会进行聚合反应而于像素阵列层102以及电极层112的表面形成聚合物薄膜。因此当此显示面板于进行单体化合物的熟化程序之后,此时显示介质150主要为液晶分子。The display medium 150 includes liquid crystal molecules. Since the display panel of this embodiment is a display panel using PSA technology, the display medium 150 also includes monomer compounds in addition to liquid crystal molecules. In other words, the display medium 150 contains liquid crystal molecules and monomer compounds when the display panel has not undergone the aging process of the monomer compounds. When the display panel is undergoing the aging process of the monomer compound, the monomer compound will undergo a polymerization reaction to form a polymer film on the surface of the pixel array layer 102 and the electrode layer 112 . Therefore, when the display panel is subjected to the aging process of monomer compounds, the display medium 150 is mainly liquid crystal molecules.

接下来,将针对第一基板100上的像素阵列层102作详细说明。承上所述,像素阵列层102是由多个像素结构所构成,在本实施例中,每一像素结构的设计如图2A所示,图2B为图2A中的像素电极的示意图,图3图为2A中沿着剖面线I-I’的剖面示意图。请参照图2A、图2B及图3,在本实施例中,像素结构包括扫描线SL以及数据线DL、有源元件T、电容电极线202、上电极图案204以及像素电极P。Next, the pixel array layer 102 on the first substrate 100 will be described in detail. As mentioned above, the pixel array layer 102 is composed of multiple pixel structures. In this embodiment, the design of each pixel structure is as shown in FIG. 2A, and FIG. 2B is a schematic diagram of the pixel electrode in FIG. The figure is a schematic cross-sectional view along the section line II' in 2A. Please refer to FIG. 2A , FIG. 2B and FIG. 3 , in this embodiment, the pixel structure includes scan lines SL and data lines DL, active elements T, capacitor electrode lines 202 , upper electrode patterns 204 and pixel electrodes P.

扫描线SL及数据线DL位于第一基板上100。扫描线SL与数据线DL的延伸方向不相同。此外,扫描线SL以及数据线DL是位于不同的膜层,且两者之间夹有绝缘层。扫描线SL与数据线DL主要用来传递驱动此像素结构的驱动信号。The scan lines SL and the data lines DL are located on the first substrate 100 . The extension directions of the scan lines SL and the data lines DL are different. In addition, the scan lines SL and the data lines DL are located in different film layers with an insulating layer interposed therebetween. The scan line SL and the data line DL are mainly used to transmit the driving signal for driving the pixel structure.

有源元件T是与扫描线SL以及数据线DL电连接。在此,有源元件T例如是一薄膜晶体管,其包括栅极G、通道层CH、源极S以及漏极D。栅极G与扫描线SL电连接,源极S与数据线DL电连接,换言之,当有控制信号输入扫描线SL时,扫描线SL与栅极G之间会电性导通;当有控制信号输入数据线DL时,数据线DL会与源极S电性导通。通道层CH位于栅极的上方并且位于源极S与漏极D的下方。本实施例的有源元件T是以底部栅极型薄膜晶体管为例来说明,但本发明不限于此。在其他的实施例中,有源元件T也可以是顶部栅极型薄膜晶体管。The active element T is electrically connected to the scan line SL and the data line DL. Here, the active element T is, for example, a thin film transistor, which includes a gate G, a channel layer CH, a source S and a drain D. As shown in FIG. The gate G is electrically connected to the scan line SL, and the source S is electrically connected to the data line DL. In other words, when a control signal is input to the scan line SL, the scan line SL and the gate G are electrically connected; When a signal is input into the data line DL, the data line DL is electrically connected to the source S. The channel layer CH is located above the gate and below the source S and the drain D. The active device T in this embodiment is illustrated by taking a bottom gate thin film transistor as an example, but the present invention is not limited thereto. In other embodiments, the active element T may also be a top gate thin film transistor.

电容电极线202是位于第一基板100上。电容电极线202的延伸方向与扫描线SL平行。在本实施例中,电容电极线202可以与扫描线SL同时形成,因此电容电极线202与扫描线SL属于同一膜层。根据本发明的一实施例,各像素结构中的电容电极线202是电连接至一共同电压。The capacitor electrode lines 202 are located on the first substrate 100 . The extending direction of the capacitive electrode lines 202 is parallel to the scanning lines SL. In this embodiment, the capacitive electrode lines 202 and the scanning lines SL can be formed at the same time, so the capacitive electrode lines 202 and the scanning lines SL belong to the same film layer. According to an embodiment of the present invention, the capacitor electrode lines 202 in each pixel structure are electrically connected to a common voltage.

上电极图案204位于电容电极线202的上方,其中上电极图案204中具有一第一开口206,其暴露出位于上电极图案204底下的电容电极线202。更详细而言,上电极图案204与电容电极线202之间两者重叠设置,且两者之间夹有一绝缘层211用以使上电极图案204与电容电极线202两者电性隔离,如图3所示。而上电极图案204中的第一开口206则是暴露出位于电容电极线202上方的绝缘层211。在本实施例中,上电极图案204是于形成数据线DL时同时形成,因此上电极图案204与数据线DL是属于同一膜层。The upper electrode pattern 204 is located above the capacitive electrode line 202 , wherein the upper electrode pattern 204 has a first opening 206 exposing the capacitive electrode line 202 under the upper electrode pattern 204 . In more detail, the upper electrode pattern 204 and the capacitor electrode line 202 are overlapped, and an insulating layer 211 is sandwiched between the two to electrically isolate the upper electrode pattern 204 and the capacitor electrode line 202, as shown in FIG. Figure 3 shows. The first opening 206 in the upper electrode pattern 204 exposes the insulating layer 211 above the capacitor electrode line 202 . In this embodiment, the upper electrode pattern 204 is formed at the same time as the data line DL is formed, so the upper electrode pattern 204 and the data line DL belong to the same film layer.

根据本发明的一实施例,上电极图案204包括一第一部分204a以及一第二部分204b,且第一开口206位于第二部分204b。另外,本实施例的第一部分204a以及第二部分204b彼此分离开来。在图2A中所绘示的第一部分204a是位于第二部分204b的两侧。然而,本发明不限于此,在其他的实施例中,也可以仅设计一个第一部分,或者是第一部分204a与第二部分204b是连接在一起。According to an embodiment of the present invention, the upper electrode pattern 204 includes a first portion 204a and a second portion 204b, and the first opening 206 is located in the second portion 204b. In addition, the first part 204a and the second part 204b of this embodiment are separated from each other. The first portion 204a shown in FIG. 2A is located on both sides of the second portion 204b. However, the present invention is not limited thereto. In other embodiments, only one first part may be designed, or the first part 204a and the second part 204b are connected together.

根据本发明的实施例,在此像素结构中,更包括一遮蔽线205。遮蔽线205与数据线DL平行设置,且位于像素结构的中间位置。在本实施例中,遮蔽线205是与数据线DL以及上电极图案204同时形成,因此遮蔽线205可以直接与上电极图案204的第二部分204b连接在一起。然,本发明不限于此,根据其他实施例,遮蔽线205可以与扫描线SL同时形成。由于遮蔽线205本身处于为浮置状态,因此即使扫描线SL与遮蔽线205相接,也不会对扫描线SL的信号传递造成影响。此外,在另一实施例中,遮蔽线205也可以不与上电极图案204相连。According to an embodiment of the present invention, the pixel structure further includes a shielding line 205 . The shielding line 205 is arranged parallel to the data line DL, and is located in the middle of the pixel structure. In this embodiment, the shielding line 205 is formed simultaneously with the data line DL and the upper electrode pattern 204 , so the shielding line 205 can be directly connected to the second portion 204 b of the upper electrode pattern 204 . However, the present invention is not limited thereto, and according to other embodiments, the shielding lines 205 may be formed simultaneously with the scan lines SL. Since the shielding line 205 itself is in a floating state, even if the scanning line SL is connected to the shielding line 205 , it will not affect the signal transmission of the scanning line SL. In addition, in another embodiment, the shielding line 205 may not be connected to the upper electrode pattern 204 .

值得一提的是,遮蔽线205主要的作用为使位于遮蔽线205上方的液晶分子的倾倒而产生的显示现象不会被人眼看到。因此,设计遮蔽线205可以使液晶显示面板具有较佳的显示品质,但本发明不限制一定要使用遮蔽线。换言之,在其他的实施例中,亦可以省略遮蔽线205的制作。It is worth mentioning that the main function of the shielding line 205 is to prevent the display phenomenon caused by the tilting of the liquid crystal molecules above the shielding line 205 from being seen by human eyes. Therefore, designing the shielding lines 205 can make the liquid crystal display panel have better display quality, but the present invention does not limit the use of the shielding lines. In other words, in other embodiments, the fabrication of the shielding line 205 can also be omitted.

像素电极P与有源元件T电连接。在本实施例中,像素电极P是与有源元件T的漏极D电连接。更详细而言,在像素电极P与有源元件T的漏极D两者重叠之处更包括设置有一接触窗C1,以使像素电极P与漏极D电连接。另外,像素电极P覆盖住电容电极线202以及上电极图案204,像素电极P与上电极图案204之间夹有一绝缘层214(如图3所示)。另外,在像素电极P与上电极图案204的第一部分204a之间形成有接触窗C2,以使像素电极P与上电极图案204的第一部分204a电连接。换言之,通过接触窗C2可使像素电极P与上电极图案204的第一部分204a共电位。另外,通过上电极图案204的第一部分204a与电容电极线202之间的电性耦合关系便可以将像素电极P的电荷储存于此处,如此便可构成像素结构的储存电容器。The pixel electrode P is electrically connected to the active element T. As shown in FIG. In this embodiment, the pixel electrode P is electrically connected to the drain D of the active element T. As shown in FIG. More specifically, a contact window C1 is further provided at the overlap between the pixel electrode P and the drain D of the active element T, so as to electrically connect the pixel electrode P and the drain D. In addition, the pixel electrode P covers the capacitor electrode line 202 and the upper electrode pattern 204 , and an insulating layer 214 is sandwiched between the pixel electrode P and the upper electrode pattern 204 (as shown in FIG. 3 ). In addition, a contact window C2 is formed between the pixel electrode P and the first portion 204 a of the upper electrode pattern 204 to electrically connect the pixel electrode P to the first portion 204 a of the upper electrode pattern 204 . In other words, the pixel electrode P and the first portion 204 a of the upper electrode pattern 204 can be made to have a common potential through the contact window C2 . In addition, through the electrical coupling relationship between the first portion 204 a of the upper electrode pattern 204 and the capacitive electrode line 202 , the charge of the pixel electrode P can be stored there, thus forming a storage capacitor of the pixel structure.

此外,像素电极P包括一中间部208以及与中间部208连接的多个分支部210。特别是,像素电极P的中间部208中具有一第二开口212,其暴露出第一开口206。更详细而言,如图3所示,绝缘层214填入位于上电极图案204中的第一开口206内,且第二开口212暴露出位于第一开口206上方的绝缘层214。根据本发明的实施例,位于像素电极P的中间部208中的第二开口212的宽度大于位于上电极图案204的第二部分204b中的第一开口206的宽度。此外,根据本发明的一实施例,位于像素结构P的中间部208a中的第一开口212的宽度大于图1所示的位于第一基板100与第二基板110之间的显示介质150的厚度的两倍。In addition, the pixel electrode P includes a central portion 208 and a plurality of branch portions 210 connected to the central portion 208 . In particular, the middle portion 208 of the pixel electrode P has a second opening 212 exposing the first opening 206 . In more detail, as shown in FIG. 3 , the insulating layer 214 is filled into the first opening 206 in the upper electrode pattern 204 , and the second opening 212 exposes the insulating layer 214 above the first opening 206 . According to an embodiment of the present invention, the width of the second opening 212 located in the middle portion 208 of the pixel electrode P is greater than the width of the first opening 206 located in the second portion 204b of the upper electrode pattern 204 . In addition, according to an embodiment of the present invention, the width of the first opening 212 located in the middle portion 208a of the pixel structure P is greater than the thickness of the display medium 150 located between the first substrate 100 and the second substrate 110 shown in FIG. 1 twice as much.

再者,像素电极P的分支部210是由中间部208往四个方向延伸,也就是分支部210是由中间部208往四周延伸至像素结构的边缘。在分支部210之间的空隙又称为配向狭缝210a。Furthermore, the branch portion 210 of the pixel electrode P extends in four directions from the middle portion 208 , that is, the branch portion 210 extends from the middle portion 208 to the edge of the pixel structure. The gap between the branch portions 210 is also called an alignment slit 210a.

另外,根据本实施例,像素电极P的中间部208包括水平延伸部208a、垂直延伸部208b以及块状部208c。水平延伸部208a对应设置在电容电极线202的上方。垂直延伸部208b与水平延伸部208a交彼此垂直设置,且对应设置于遮蔽线205的上方。块状部208c位于水平延伸部208a与垂直延伸部208b的交叉处,因此水平延伸部208a与垂直延伸部208b是由块状部208c往四个方向延伸。在本实施例中,块状部208c与水平延伸部208a及垂直延伸部208b是直接连接在一起。另外,块状部208c主要是位于像素结构的中心位置。In addition, according to this embodiment, the middle portion 208 of the pixel electrode P includes a horizontally extending portion 208a, a vertically extending portion 208b, and a block portion 208c. The horizontal extension portion 208a is correspondingly disposed above the capacitive electrode line 202 . The vertical extension portion 208b and the horizontal extension portion 208a are perpendicular to each other and are correspondingly disposed above the shielding line 205 . The block portion 208c is located at the intersection of the horizontal extension portion 208a and the vertical extension portion 208b, so the horizontal extension portion 208a and the vertical extension portion 208b extend in four directions from the block portion 208c. In this embodiment, the block portion 208c is directly connected to the horizontal extension portion 208a and the vertical extension portion 208b. In addition, the block portion 208c is mainly located at the center of the pixel structure.

承上所述,本实施例的像素电极P的中间部208中并未形成有狭缝,因此相较于传统应用PSA技术的像素结构的像素电极中全面形成配向狭缝的设计,本实施例的像素电极P的配向狭缝210a所占的面积较小。由于本实施例的像素电极P的配向狭缝210a所占的面积较小,因此可以减少配向狭缝的微影刻蚀程序造成其宽度不一致所导致的显示不均匀(mura)问题。Based on the above, no slit is formed in the middle portion 208 of the pixel electrode P in this embodiment, so compared with the design in which alignment slits are fully formed in the pixel electrode of the conventional pixel structure using PSA technology, this embodiment The area occupied by the alignment slit 210a of the pixel electrode P is relatively small. Since the alignment slit 210a of the pixel electrode P in this embodiment occupies a small area, the problem of display unevenness (mura) caused by the lithographic etching process of the alignment slit can be reduced.

另外,本实施例在像素电极P中形成第二开口212,并且上电极图案204中形成第一开口206,如此可以使得位于第一开口206与第二开口212下方的电容电极线202暴露出来。因此,当本实施例的显示面板于进行PSA的熟化程序而于电容电极线202施压高电压时,电容电极线202上的高电压可以直接穿过第一开口206与第二开口212而直接对第二开口212上方的液晶分子产生作用。换言之,由于液晶分子具有朝向高电压倾倒的特定,因此位于像素电极P的中间部208上方的液晶分子将因为经由第一开口206与第二开口212的电压影响而产生预期的配向效果。因此,即使在像素电极P的中间部208没有设置配向狭缝,但利用第一开口206与第二开口212仍可以使中间部208上方的液晶分子达到预期的配向效果。In addition, in this embodiment, the second opening 212 is formed in the pixel electrode P, and the first opening 206 is formed in the upper electrode pattern 204 , so that the capacitor electrode line 202 located under the first opening 206 and the second opening 212 is exposed. Therefore, when the display panel of this embodiment is performing the curing process of the PSA and applying a high voltage to the capacitor electrode line 202, the high voltage on the capacitor electrode line 202 can pass through the first opening 206 and the second opening 212 directly and directly It acts on the liquid crystal molecules above the second opening 212 . In other words, since the liquid crystal molecules have a characteristic of tilting towards a high voltage, the liquid crystal molecules located above the middle portion 208 of the pixel electrode P will have a desired alignment effect due to the influence of the voltage through the first opening 206 and the second opening 212 . Therefore, even if no alignment slit is provided in the middle portion 208 of the pixel electrode P, the liquid crystal molecules above the middle portion 208 can still achieve the expected alignment effect by using the first opening 206 and the second opening 212 .

换言之,本发明将像素电极P的中间部208设计为完整的电极图案,以减少配向狭缝在像素电极中所占的面积,并且又在像素电极P的中间部208设计第二开口212且在第二开口122下方形成第一开口,以使电容电极线202的电压能对像素电极P的中间部208上方的液晶分子产生配向效果。因此,本发明可以使像素结构具有与传统PSA像素结构相同的配向效果,并且同时可达到降低像素电极P的配向狭缝210a所占的面积的目的,以减少配向狭缝的微影刻蚀程序造成其宽度不一致所导致的显示不均匀(mura)问题。In other words, in the present invention, the middle part 208 of the pixel electrode P is designed as a complete electrode pattern to reduce the area occupied by the alignment slit in the pixel electrode, and the second opening 212 is designed in the middle part 208 of the pixel electrode P. The first opening is formed under the second opening 122 so that the voltage of the capacitor electrode line 202 can have an alignment effect on the liquid crystal molecules above the middle portion 208 of the pixel electrode P. Therefore, the present invention can make the pixel structure have the same alignment effect as the traditional PSA pixel structure, and at the same time can achieve the purpose of reducing the area occupied by the alignment slit 210a of the pixel electrode P, so as to reduce the lithographic etching process of the alignment slit The display unevenness (mura) problem caused by its inconsistent width.

上述图2A与图2B的实施例中,像素电极P的中间部208的块状部208c是呈现菱形形状,但本发明不限于此,根据其他实施例,块状部208c也可以是其他种形状设计。2A and FIG. 2B, the block portion 208c in the middle portion 208 of the pixel electrode P is in the shape of a rhombus, but the present invention is not limited thereto. According to other embodiments, the block portion 208c can also be in other shapes. design.

图4A为根据本发明另一实施例的像素结构的上视示意图,图4B为图4A中的像素电极的示意图。图4A及图4B所示的实施例与上述图2A与图2B所示的实施例相似,因此相同的元件以相同的标号表示,且不再重复赘述。图4A及图4B所示的实施例与上述图2A与图2B所示的实施例不同之处在于像素电极P的中间部208的块状部208c是呈现矩形形状或者是方形形状。将块状部208c设计成矩形形状或是方形形状可以进一步减少像素电极P中配向狭缝210a所占的面积。FIG. 4A is a schematic top view of a pixel structure according to another embodiment of the present invention, and FIG. 4B is a schematic diagram of a pixel electrode in FIG. 4A . The embodiment shown in FIG. 4A and FIG. 4B is similar to the above-mentioned embodiment shown in FIG. 2A and FIG. 2B , so the same elements are denoted by the same reference numerals and will not be described again. The difference between the embodiment shown in FIG. 4A and FIG. 4B and the embodiment shown in FIG. 2A and FIG. 2B lies in that the block portion 208c of the middle portion 208 of the pixel electrode P is rectangular or square. Designing the block portion 208c in a rectangular shape or a square shape can further reduce the area occupied by the alignment slit 210a in the pixel electrode P. Referring to FIG.

根据其他的实施例,块状部208c除了可以是上述的菱形、矩形或方形之外,其还可以是其他形状,例如是圆形、三角形或是其他多边形。According to other embodiments, besides the aforementioned rhombus, rectangle or square, the block portion 208c may also be in other shapes, such as circle, triangle or other polygons.

图5A为根据本发明另一实施例的像素结构的上视示意图,图5B为图5A中的像素电极的示意图。图5A及图5B所示的实施例与上述图2A与图2B所示的实施例相似,因此相同的元件以相同的标号表示,且不再重复赘述。图5A及图5B所示的实施例与上述图2A与图2B所示的实施例不同之处在于在像素电极P的中间部208中,其块状部208c与水平延伸部208a及垂直延伸部208b之间具有一间隙S。换言之,块状部208c与水平延伸部208a及垂直延伸部208b之间并非完整的连接在一起。FIG. 5A is a schematic top view of a pixel structure according to another embodiment of the present invention, and FIG. 5B is a schematic diagram of a pixel electrode in FIG. 5A . The embodiment shown in FIG. 5A and FIG. 5B is similar to the above-mentioned embodiment shown in FIG. 2A and FIG. 2B , so the same components are denoted by the same reference numerals and will not be described again. The difference between the embodiment shown in FIG. 5A and FIG. 5B and the above-mentioned embodiment shown in FIG. 2A and FIG. There is a gap S between 208b. In other words, the block portion 208c is not completely connected with the horizontal extension portion 208a and the vertical extension portion 208b.

更详细而言,块状部208c大致分成四个区块,其各自位于水平延伸部208a及垂直延伸部208b的侧边处。另外,块状部208c与垂直延伸部208b之间的间隙S中更包括多个次分支部210’,且次分支部210’之间具有狭缝210b。类似地,在块状部208c与水平延伸部208a之间的间隙S中更包括多个次分支部210’,且次分支部210’之间具有狭缝210b。In more detail, the block portion 208c is roughly divided into four blocks, which are respectively located at the sides of the horizontal extension portion 208a and the vertical extension portion 208b. In addition, the gap S between the block portion 208c and the vertically extending portion 208b further includes a plurality of sub-branches 210', and there are slits 210b between the sub-branches 210'. Similarly, the gap S between the block portion 208c and the horizontally extending portion 208a further includes a plurality of sub-branches 210', and there are slits 210b between the sub-branches 210'.

图6A为根据本发明另一实施例的像素结构的上视示意图,图6B为图6A中的像素电极的示意图。图6A及图6B所示的实施例与上述图2A与图2B所示的实施例相似,因此相同的元件以相同的标号表示,且不再重复赘述。图6A及图6B所示的实施例与上述图2A与图2B所示的实施例不同之处在于像素电极P的相邻两分支部210之间的配向狭缝210a的长度可以不完全相同。举例来说,图中所示的配向狭缝210c较长,而配向狭缝210d较短。另外,配向狭缝210c与配向狭缝210d不同于配向狭缝210a的设计。配向狭缝210a是自中间部208往像素结构的边缘延伸,但配向狭缝210c与配向狭缝210d并未延伸至像素结构的边缘。因此,在配向狭缝210c与配向狭缝210d两侧的分支部210有局部是相连在一起。FIG. 6A is a schematic top view of a pixel structure according to another embodiment of the present invention, and FIG. 6B is a schematic diagram of a pixel electrode in FIG. 6A . The embodiment shown in FIG. 6A and FIG. 6B is similar to the above-mentioned embodiment shown in FIG. 2A and FIG. 2B , so the same components are denoted by the same reference numerals and will not be described again. The difference between the embodiment shown in FIG. 6A and FIG. 6B and the embodiment shown in FIG. 2A and FIG. 2B is that the lengths of the alignment slits 210a between two adjacent branch portions 210 of the pixel electrode P may not be exactly the same. For example, the alignment slit 210c shown in the figure is longer, while the alignment slit 210d is shorter. In addition, the alignment slit 210c and the alignment slit 210d are different from the design of the alignment slit 210a. The alignment slit 210a extends from the middle portion 208 to the edge of the pixel structure, but the alignment slit 210c and the alignment slit 210d do not extend to the edge of the pixel structure. Therefore, parts of the branch portions 210 on both sides of the alignment slit 210c and the alignment slit 210d are connected together.

值得一提的是,配向狭缝210c与配向狭缝210d可以任意的设计于分支部210之间,例如可相隔两个或三个或以上的分支部210才设计一个配向狭缝210c或配向狭缝210d。It is worth mentioning that the alignment slit 210c and the alignment slit 210d can be arbitrarily designed between the branch portions 210, for example, an alignment slit 210c or an alignment slit can be designed only after two or three or more branch portions 210 are separated. seam 210d.

综上所述,由于本发明的像素结构中的上电极图案中具有第一开口,且像素电极的中间部具有第二开口。当于进行PSA技术的熟化程序时,于电容电极线所施加的高电压可经第一开口与第二开口而对第二开口上方的液晶分子产生配向作用,进而使该处的液晶分子达到预定的预倾角。如此一来,便可以减少像素电极中的配向狭缝所占的面积,进而减少配向狭缝的微影刻蚀程序造成其宽度不一致所导致的显示不均匀(mura)问题。To sum up, since the upper electrode pattern in the pixel structure of the present invention has a first opening, and the middle part of the pixel electrode has a second opening. When performing the maturation process of PSA technology, the high voltage applied to the capacitor electrode line can generate an alignment effect on the liquid crystal molecules above the second opening through the first opening and the second opening, and then make the liquid crystal molecules there reach a predetermined level. the pretilt angle. In this way, the area occupied by the alignment slits in the pixel electrodes can be reduced, thereby reducing the display unevenness (mura) problem caused by the inconsistent width of the alignment slits caused by the lithographic etching process.

虽然本发明已以实施例揭露如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当以权利要求所界定的为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the claims.

Claims (17)

1.一种像素结构,其特征在于,所述的像素结构包括:1. A pixel structure, characterized in that, the pixel structure comprises: 一扫描线以及一数据线,位于一基板上;A scanning line and a data line are located on a substrate; 一有源元件,其与所述扫描线以及所述数据线电连接;an active element electrically connected to the scan line and the data line; 一电容电极线,位于所述基板上;a capacitive electrode line located on the substrate; 一上电极图案,位于所述电容电极线的上方,其中所述上电极图案中具有一第一开口,其暴露出所述电容电极线;以及an upper electrode pattern located above the capacitive electrode lines, wherein the upper electrode pattern has a first opening exposing the capacitive electrode lines; and 一像素电极,其与所述有源元件电连接并覆盖住所述电容电极线以及所述上电极图案,其中所述像素电极包括一中间部以及与所述中间部连接的多个分支部,且所述中间部中具有一第二开口,其暴露出所述第一开口,其中,所述上电极图案包括一第一部分以及一第二部分,其中所述第一部分与所述像素电极电连接,且所述第一开口位于所述第二部分中;A pixel electrode, which is electrically connected to the active element and covers the capacitor electrode line and the upper electrode pattern, wherein the pixel electrode includes a middle part and a plurality of branch parts connected to the middle part, and There is a second opening in the middle portion exposing the first opening, wherein the upper electrode pattern includes a first portion and a second portion, wherein the first portion is electrically connected to the pixel electrode, and the first opening is located in the second portion; 其中,所述像素电极的所述中间部包括:一水平延伸部,其对应设置在所述电容电极线的上方;一垂直延伸部,其与所述水平延伸部垂直设置;一块状部,其位于所述水平延伸部与所述垂直延伸部的交叉处;所述块状部与所述水平延伸部及所述垂直延伸部之间具有一间隙;在所述块状部与所述水平延伸部之间所述间隙中以及所述块状部与所述垂直延伸部之间的所述间隙中更包括多个次分支部。Wherein, the middle part of the pixel electrode includes: a horizontal extension part, which is correspondingly arranged above the capacitor electrode line; a vertical extension part, which is vertically arranged with the horizontal extension part; a lump part, It is located at the intersection of the horizontal extension and the vertical extension; there is a gap between the block and the horizontal extension and the vertical extension; between the block and the horizontal The gap between the extension parts and the gap between the block part and the vertical extension part further include a plurality of sub-branches. 2.如权利要求1所述的像素结构,其特征在于,所述的像素结构更包括:2. The pixel structure according to claim 1, wherein the pixel structure further comprises: 一第一绝缘层,位于所述电容电极线与所述上电极图案之间,其中所述第一开口暴露出位于所述电容电极线上方的所述第一绝缘层;以及a first insulating layer located between the capacitive electrode lines and the upper electrode pattern, wherein the first opening exposes the first insulating layer above the capacitive electrode lines; and 一第二绝缘层,位于所述像素电极与所述上电极图案之间,其中所述第二绝缘层填入所述第一开口内,且所述第二开口暴露出位于所述第一开口上方的所述第二绝缘层。A second insulating layer, located between the pixel electrode and the upper electrode pattern, wherein the second insulating layer fills the first opening, and the second opening exposes the above the second insulating layer. 3.如权利要求1所述的像素结构,其特征在于,所述第二开口的宽度大于所述第一开口的宽度。3. The pixel structure according to claim 1, wherein a width of the second opening is greater than a width of the first opening. 4.如权利要求1所述的像素结构,其特征在于,所述像素电极的所述多个分支部自所述中间部往四个方向延伸。4. The pixel structure according to claim 1, wherein the plurality of branch portions of the pixel electrode extend in four directions from the middle portion. 5.如权利要求1所述的像素结构,其特征在于,所述的像素结构更包括一遮蔽线,位于所述垂直延伸部的下方。5. The pixel structure as claimed in claim 1, further comprising a shielding line located below the vertically extending portion. 6.如权利要求5所述的像素结构,其特征在于,所述遮蔽线与所述扫描线属于同一膜层,或是与所述数据线属于同一膜层。6 . The pixel structure according to claim 5 , wherein the shielding line belongs to the same film layer as the scanning line, or belongs to the same film layer as the data line. 7.如权利要求1所述的像素结构,其特征在于,所述第一部分以及所述第二部分彼此分离开来。7. The pixel structure of claim 1, wherein the first portion and the second portion are separated from each other. 8.一种像素结构,其特征在于,所述的像素结构包括:8. A pixel structure, characterized in that the pixel structure comprises: 一扫描线以及一数据线,位于一基板上;A scanning line and a data line are located on a substrate; 一有源元件,其与所述扫描线以及所述数据线电连接;an active element electrically connected to the scan line and the data line; 一电容电极线,位于所述基板上;a capacitive electrode line located on the substrate; 一上电极图案,位于所述电容电极线的上方,其中所述上电极图案中具有一第一开口,其暴露出所述电容电极线;以及an upper electrode pattern located above the capacitive electrode lines, wherein the upper electrode pattern has a first opening exposing the capacitive electrode lines; and 一像素电极,其与所述有源元件电连接并覆盖住所述电容电极线以及所述上电极图案,其中所述像素电极包括一中间部以及与所述中间部连接的多个分支部,且所述中间部中具有一第二开口,其暴露出所述第一开口,其中,所述上电极图案包括一第一部分以及一第二部分,其中所述第一部分与所述像素电极电连接,且所述第一开口位于所述第二部分中;A pixel electrode, which is electrically connected to the active element and covers the capacitor electrode line and the upper electrode pattern, wherein the pixel electrode includes a middle part and a plurality of branch parts connected to the middle part, and There is a second opening in the middle portion exposing the first opening, wherein the upper electrode pattern includes a first portion and a second portion, wherein the first portion is electrically connected to the pixel electrode, and the first opening is located in the second portion; 其中,所述像素电极的相邻两分支部之间具有一狭缝,且所述狭缝的长度不完全相同,包括自中间部延伸至像素结构边缘的狭缝,及未延伸至像素结构边缘的狭缝;所述未延伸至像素结构边缘的狭缝两侧的分支部有局部相连在一起。Wherein, there is a slit between two adjacent branch parts of the pixel electrode, and the lengths of the slits are not completely the same, including the slit extending from the middle part to the edge of the pixel structure, and the slit not extending to the edge of the pixel structure. The slit; the branches on both sides of the slit that do not extend to the edge of the pixel structure are partially connected together. 9.如权利要求8所述的像素结构,其特征在于,所述的像素结构更包括:9. The pixel structure according to claim 8, wherein the pixel structure further comprises: 一第一绝缘层,位于所述电容电极线与所述上电极图案之间,其中所述第一开口暴露出位于所述电容电极线上方的所述第一绝缘层;以及a first insulating layer located between the capacitive electrode lines and the upper electrode pattern, wherein the first opening exposes the first insulating layer above the capacitive electrode lines; and 一第二绝缘层,位于所述像素电极与所述上电极图案之间,其中所述第二绝缘层填入所述第一开口内,且所述第二开口暴露出位于所述第一开口上方的所述第二绝缘层。A second insulating layer, located between the pixel electrode and the upper electrode pattern, wherein the second insulating layer fills the first opening, and the second opening exposes the above the second insulating layer. 10.如权利要求8所述的像素结构,其特征在于,所述第二开口的宽度大于所述第一开口的宽度。10. The pixel structure according to claim 8, wherein a width of the second opening is greater than a width of the first opening. 11.如权利要求8所述的像素结构,其特征在于,所述像素电极的所述多个分支部自所述中间部往四个方向延伸。11. The pixel structure according to claim 8, wherein the plurality of branch portions of the pixel electrode extend in four directions from the middle portion. 12.如权利要求8所述的像素结构,其特征在于,所述的像素结构更包括一遮蔽线,位于垂直延伸部的下方。12. The pixel structure as claimed in claim 8, further comprising a shielding line located below the vertically extending portion. 13.如权利要求12所述的像素结构,其特征在于,所述遮蔽线与所述扫描线属于同一膜层,或是与所述数据线属于同一膜层。13 . The pixel structure according to claim 12 , wherein the shielding line and the scanning line belong to the same film layer, or belong to the same film layer as the data line. 14 . 14.如权利要求8所述的像素结构,其特征在于,所述第一部分以及所述第二部分彼此分离开来。14. The pixel structure of claim 8, wherein the first portion and the second portion are separated from each other. 15.一种显示面板,其特征在于,所述的显示面板包括:15. A display panel, characterized in that the display panel comprises: 一第一基板,所述第一基板上具有多个像素结构,且每一像素结构如权利要求1或8所述;A first substrate, having a plurality of pixel structures on the first substrate, and each pixel structure is as described in claim 1 or 8; 一第二基板,位于所述第一基板的对向,其中所述第二基板上包括设置有一电极层;以及A second substrate, located opposite to the first substrate, wherein the second substrate includes an electrode layer; and 一显示介质,位于所述第一基板与所述第二基板之间。A display medium is located between the first substrate and the second substrate. 16.如权利要求15所述的显示面板,其特征在于,所述像素结构中的所述第一开口的宽度大于所述第一基板与所述第二基板之间的所述显示介质的厚度的两倍。16. The display panel according to claim 15, wherein the width of the first opening in the pixel structure is greater than the thickness of the display medium between the first substrate and the second substrate twice as much. 17.如权利要求15所述的显示面板,其特征在于,所述第二基板上的所述电极层未设置有配向图案。17. The display panel according to claim 15, wherein the electrode layer on the second substrate is not provided with an alignment pattern.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1570745A (en) * 2004-04-29 2005-01-26 友达光电股份有限公司 Thin film transistor array substrate and repair method thereof
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CN101145568A (en) * 2007-10-26 2008-03-19 友达光电股份有限公司 Pixel structure and manufacturing method of liquid crystal display panel with pixel structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1570745A (en) * 2004-04-29 2005-01-26 友达光电股份有限公司 Thin film transistor array substrate and repair method thereof
CN1959507A (en) * 2006-10-25 2007-05-09 友达光电股份有限公司 Array substrate
CN101145568A (en) * 2007-10-26 2008-03-19 友达光电股份有限公司 Pixel structure and manufacturing method of liquid crystal display panel with pixel structure

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