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CN1154178C - 半导体装置及其制造方法、电路基板和电子装置 - Google Patents

半导体装置及其制造方法、电路基板和电子装置 Download PDF

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Publication number
CN1154178C
CN1154178C CNB998003778A CN99800377A CN1154178C CN 1154178 C CN1154178 C CN 1154178C CN B998003778 A CNB998003778 A CN B998003778A CN 99800377 A CN99800377 A CN 99800377A CN 1154178 C CN1154178 C CN 1154178C
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Prior art keywords
semiconductor device
hole
substrate
mentioned
conductive member
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Expired - Fee Related
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CNB998003778A
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CN1262784A (zh
Inventor
桥元伸晃
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Seiko Epson Corp
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Seiko Epson Corp
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

本发明提供一种能防止外部电极的裂纹的半导体装置及其制造方法、电路基板和电子装置。半导体装置具有：形成了贯通孔(14a)的绝缘膜(14)；具有电极(13)的半导体芯片(12)；布线图形(18)，通过粘接剂(17)粘接在绝缘膜(14)的一个面的包含贯通孔(14a)上方的区域上并与半导体芯片(12)的电极(13)进行导电性的连接；以及外部电极(16)，通过贯通孔(14a)设置在布线图形(18)上，同时从与布线图形(18)相反一侧的面突出，将粘接剂(17)的一部分引入并介于贯通孔(14a)与外部电极(16)之间。

Description

半导体装置及其制造方法、电路基板和电子装置
技术领域
本发明涉及半导体装置及其制造方法、电路基板和电子装置。
背景技术
伴随近年来的电子装置的小型化，要求适合于高密度安装的半导体装置的封装体。为了适应该要求，已开发了BGA(球状栅格阵列)及CSP(芯片比例/尺寸封装)那样的表面安装型封装体。在表面安装型封装体中，往往使用形成了与半导体芯片连接的布线图形的基板。此外，往往在基板中形成了贯通孔，并形成外部电极，使其通过该贯通孔从与布线图形相反一侧的表面突出。
按照应用了这样的结构的封装体的半导体装置，在将其安装到电路基板上之后，因电路基板与半导体装置的热膨胀率的差之故，如果对外部电极施加应力，则往往在该外部电极中产生裂纹。
本发明是为了解决该问题而进行的，其目的在于提供一种能防止外部电极的裂纹的半导体装置及其制造方法、电路基板和电子装置。
发明的公开
(1)与本发明有关的半导体装置具有：
形成了贯通孔的基板；
具有电极的半导体元件；
导电部件，在上述基板的一个面的一侧通过粘接部件粘接到包含上述贯通孔上方的上述一个面的任意区域上，同时在由上述粘接部件粘接的面的相反一侧的面上与上述半导体元件的电极进行导电性的连接；以及
外部电极，通过上述贯通孔与上述导电部件连接，同时被设置在上述基板的另一个面的外侧，
在上述贯通孔内，上述粘接部件的一部分介于形成上述贯通孔的内壁面与上述外部电极之间。
按照本发明，从贯通孔内形成外部电极，粘接部件的一部分介于外部电极与贯通孔之间。因而，由于粘接部件成为应力缓和部件，故可吸收因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力。这样，可防止在外部电极中产生裂纹的情况。
再有，在本发明中，粘接部件可以从基板与导电部件间到贯通孔的内壁面保持连续性，也可以非连续地存在于贯通孔内。
(2)在该半导体装置中，可将上述粘接部件的一部分引入到上述贯通孔内而介于其间。
(3)与本发明有关的半导体装置具有：
形成了贯通孔的基板；
具有电极的半导体元件；
导电部件，在上述基板的一个面的一侧，直接在包含上述贯通孔上方的上述一个面的任意区域上形成，与上述半导体元件的电极进行导电性的连接；以及
外部电极，通过上述贯通孔与上述导电部件连接，同时被设置在上述基板的另一个面的外侧，
上述基板由其弹性比上述外部电极高的材料形成，
利用构成上述基板的上述材料，在上述贯通孔的内壁面上形成凸部。
按照本发明，通过在贯通孔的内壁面上形成凸部，比平坦的内壁面容易变形，可吸收因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力。这样，可防止在外部电极中产生裂纹的情况。
(4)在该半导体装置中，上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ可具有φ≤d的关系。
按照这一点，外部电极的直径不因贯通孔而缩小，不形成中间变细的形状。因而，由于因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力不集中，故可防止在外部电极中产生裂纹的情况。
(5)与本发明有关的半导体装置具有：
形成了贯通孔的基板；
具有电极的半导体元件；
导电部件，在上述基板的一个面的一侧通过粘接部件粘接到包含上述贯通孔上方的上述一个面的任意区域上，同时在由上述粘接部件粘接的面的相反一侧的面上与上述半导体元件的电极进行导电性的连接；以及
外部电极，通过上述贯通孔与上述导电部件连接，同时被设置在上述基板的另一个面的外侧，
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
按照本发明，从贯通孔内形成外部电极。在此，外部电极的基端部的直径d与突出部的直径φ具有φ≤d的关系。即，外部电极的直径不因贯通孔而缩小，不形成中间变细的形状。因而，由于因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力不集中，故可防止在外部电极中产生裂纹的情况。
(6)上述基板可以是绝缘基板。
(7)上述基板可以是印刷基板。
(8)上述外部电极可以由焊锡形成。
(9)在该半导体装置中，上述基板的外形可比半导体元件的外形大。
(10)在该半导体装置中，上述半导体元件的上述电极可通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料与上述导电部件进行导电性的连接。
(11)在该半导体装置中，上述半导体元件的上述电极可通过引线与上述导电部件进行导电性的连接。
(12)将上述半导体装置安装在与本发明有关的电路基板上。
(13)与本发明有关的电子装置具有上述电路基板。
(14)与本发明有关的半导体装置的制造方法包括：
准备在一个面上设置了粘接部件的基板的工序；
在通过从设置了上述粘接部件的面一侧朝向其相反一侧的面对上述基板进行起模，形成贯通孔的同时，将上述粘接部件的一部分引入到上述贯通孔内的工序；
通过上述粘接部件，将导电部件粘接到上述基板中的包含上述贯通孔上方的上述一个面的任意区域上的工序；
通过上述贯通孔和引入到该贯通孔内的上述一部分粘接部件的内侧，在上述导电部件上设置外部电极的形成材料，形成从上述导电部件的形成面的相反一侧的面突出的外部电极的工序；以及
将半导体元件的电极导电性地连接到上述导电部件上的工序。
按照本发明，在进行基板的起模来形成贯通孔时，可同时将粘接部件的一部分引入到贯通孔内。接着，如果通过贯通孔形成外部电极，则粘接部件的一部分介于该外部电极与贯通孔之间。按照这样得到的半导体装置，由于粘接部件成为应力缓和部件，故可吸收因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力，可防止在外部电极中产生裂纹的情况。
(15)与本发明有关的半导体装置的制造方法包括：
准备形成在内壁面上具有凸部的贯通孔、同时直接在包含上述贯通孔上方的区域中形成导电部件、由其弹性比外部电极高的材料构成的基板的工序；
通过上述贯通孔，在上述导电部件上设置外部电极的形成材料，形成从上述导电部件的形成面的相反一侧的面突出的外部电极的工序；以及
将半导体元件的电极导电性地连接到上述导电部件上的工序。
按照本发明，通过在贯通孔的内壁面上形成凸部，比平坦的内壁面容易变形，可吸收因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力。这样，可防止在外部电极中产生裂纹的情况。
(16)在该制造方法中，可在形成上述导电部件之前，包括对上述基板进行起模的工序，在上述起模的工序中，将上述基板的一部分引入到上述贯通孔中，来形成凸部。
按照这一点，可在进行起模的工序中简单地形成凸部。
(17)在该制造方法中，可使用激光形成上述贯通孔。
如果使用激光，则必然产生凸部。
(18)在该制造方法中，可利用湿法刻蚀形成上述贯通孔。
如果应用湿法刻蚀，则必然产生凸部。
(19)在该制造方法中，上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ可具有φ≤d的关系。
按照这一点，外部电极的直径不因贯通孔而缩小，不形成中间变细的形状。因而，由于因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力不集中，故可防止在外部电极中产生裂纹的情况。
(20)与本发明有关的半导体装置的制造方法包括：
准备在形成贯通孔的同时，在包含上述贯通孔上方的区域中形成了导电部件的基板的工序；
通过上述贯通孔，在上述导电部件上设置外部电极的形成材料，形成从与上述导电部件相反一侧的面突出的外部电极的工序；以及
将半导体元件的电极导电性地连接到上述导电部件上的工序，
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
按照用本发明制造的半导体装置，外部电极的基端部的直径d与突出部的直径φ具有φ≤d的关系。即，外部电极的直径不因贯通孔而缩小，不形成中间变细的形状。因而，由于因与电路基板的热膨胀率的差而产生的应力(热应力)及从外部对电路基板施加的机械的应力不集中，故可防止在外部电极中产生裂纹的情况。
(21)上述基板可以是绝缘膜或印刷基板。
(22)上述外部电极的形成材料可以是焊锡。
(23)在该半导体装置的制造方法中，可在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序之后，包括在半导体元件的外侧对上述基板进行冲切的工序。
(24)在该半导体装置的制造方法中，在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，可通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料将上述电极导电性地连接到上述导电部件上。
(25)在该半导体装置的制造方法中，在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，可通过引线将上述电极导电性地连接到上述导电部件上。
附图的简单说明
图1是示出与第1实施形态有关的半导体装置的剖面图，图2A和图2B是示出与第1实施形态有关的半导体装置的制造方法的图，图3是示出与第1实施形态的变形例有关的半导体装置的图，图4是示出与第2实施形态有关的半导体装置的剖面图，图5是示出与第3实施形态有关的半导体装置的图，图6是示出与第4实施形态有关的半导体装置的图，图7是示出与第5实施形态有关的半导体装置的剖面图，图8A和图8B是示出与第5实施形态有关的半导体装置的制造方法的图，图9是示出与第5实施形态有关的半导体装置的制造方法的图，图10是示出与第5实施形态有关的半导体装置的制造方法的图，图11是示出安装了与本实施形态有关的半导体装置的电路基板的图，图12是示出具备安装了与本实施形态有关的半导体装置的电路基板的电子装置的图。
用于实施发明的最佳形态
以下，参照附图说明本发明的优选实施形态。
(第1实施形态)
图1是示出与第1实施形态有关的半导体装置的图。该半导体装置10包括作为半导体元件的一例的半导体芯片12和作为基板的一例的绝缘膜14，它是应用了CSP型封装体的装置。在绝缘膜14上形成了外部电极16，半导体芯片12具有多个电极13。在图1中，只在半导体芯片12的相对的二边上形成了电极13，但如众所周知那样，也可在四边上形成。
绝缘膜14由聚酰亚胺树脂构成，具有多个贯通孔14a。作为由聚酰亚胺树脂构成的基板，可使用：
热膨胀系数：约12ppm/℃
弹性系数：约900kg/mm2
或，
热膨胀系数：约20ppm/℃
弹性系数：约302kg/mm2的基板。此外，在绝缘膜14的一个面上粘接了作为导电部件的一例的布线图形18。详细地说，布线图形18通过粘接剂17粘接到绝缘膜14上。作为粘接部件的一例的粘接剂17，可使用：
热膨胀系数(50～150℃)：约70～165ppm/℃
弹性系数(150℃)：约0.1～0.9×108Pa
断裂延伸率：约13～29％的粘接剂，例如，可使用：
热膨胀系数(50～150℃)：约70ppm/℃
弹性系数(150℃)：约0.1×108Pa
断裂延伸率：约21％的粘接剂。
将粘接剂17的一部分引入到贯通孔14a内。再有，也可使用粘接带等，来代替粘接剂17。此外，将布线图形18形成为通过贯通孔14a上方，在图1中未示出，包含贯通孔14a上方的部分成为比其它部分宽度宽的接合区(land)。
再者，在绝缘膜14上通过贯通孔14a在布线图形18上(在图中，朝下)形成了外部电极16。外部电极16包括位于贯通孔14a内与布线图形18接合的基端部16a和在与布线图形18相反的一侧从绝缘膜14突出的突出部16b。再有，外部电极16由焊锡、铜或镍等构成。
在本实施形态中，如图1中放大地示出的那样，在外部电极16的基端部16a与贯通孔14a之间夹入了粘接剂17的一部分。利用该粘接剂17的一部分来缓和施加到外部电极16上的应力(热应力或机械的应力)。在此，由于应力大多在加热时产生，故粘接剂17必须至少在加热时具有起到应力缓和功能的程度的柔软性和弹性。
在各个布线图形18上形成了凸部18a。各凸部18a与半导体芯片12的各电极13对应地形成。因而，在电极13沿半导体芯片12的外周排列在四边上时，凸部18a也排列在四边上而形成。电极13与凸部18a导电性地连接，通过布线图形18与外部电极16导通。此外，通过形成凸部18a，可在绝缘膜14与半导体芯片12之间、或在布线图形18与半导体芯片12之间空出宽的间隔。
利用作为各向异性导电材料的一例的各向异性导电膜20，可谋求电极13与凸部18a的导电性的连接。各向异性导电膜20是使树脂中的金属微粒子等的导电粒子分散而作成片状的膜。如果在电极13与凸部18a之间挤压各向异性导电膜20，则导电粒子也被挤压，使两者间导电性地导通。此外，如果使用各向异性导电膜20，则只在挤压导电粒子的方向上导电性地导通，在此以外的方向上不导通。因而，即使在多个电极13上粘接片状的各向异性导电膜20，在相邻的电极13相互间也不导电性地导通。
在上述的例子中，在布线图形18一侧形成了凸部18a，但也可在半导体芯片12的电极13上形成凸点，在该情况下，不需要在布线图形18一侧形成凸部18a。
在本实施形态中，只在电极13与凸部18a之间及其附近形成了各向异性导电膜20，但可只在电极13与凸部18a之间形成，也可在包括注入下述的树脂22的区域的半导体芯片12的整个面上形成。
然后，将树脂22从凝胶注入孔24注入到在绝缘膜14与半导体芯片12之间形成的间隙中。再有，在半导体芯片12的整个面上形成各向异性导电膜20的情况下，不需要注入孔24，而且，也不需要树脂22的注入工序。
在此，如果使用杨氏模量低的、起到应力缓和的作用的材料作为树脂膜22，则除了上述的粘接剂17产生的应力缓和功能外，还可谋求进一步的应力缓和。例如，通过使用聚酰亚胺树脂、硅酮树脂、硅酮变性聚酰亚胺树脂、环氧树脂、硅酮变性环氧树脂、丙烯酸树脂等，树脂22起到应力缓和功能。
其次，关于与本实施形态有关的半导体装置10的制造方法，说明主要的工序。
首先，准备在一个面上设置了粘接剂17的绝缘膜14，在绝缘膜14中形成贯通孔14a。在图2A和图2B中示出该工序。即，如图2A中所示，首先，在设置了粘接剂17的面的一侧，配置冲切模具1和支承模具2。在该图中，使具有粘接剂17的面朝上来放置绝缘膜14，在其上放置了冲切模具1。再有，将绝缘膜14放置在图中未示出的台上。然后，如图2B中所示，使冲切模具1贯通绝缘膜14，形成贯通孔14a。在这里，冲切模具1由支承模具2导向，一边将粘接剂17引入，一边贯通绝缘膜14。因而，成为将粘接剂17的一部分引入到贯通孔14a的内部的状态。此外，即使拔出冲切模具1，已被引入到贯通孔14a内的粘接剂17也不返回到原处，而是留在贯通孔14a内。再有，为了将粘接剂17引入到贯通孔14a内，最好在冲切模具1与支承模具2之间存在着约10～50μm的间隙(clearance)。
此外，最好在与形成贯通孔14a的同时，也在绝缘膜14中形成凝胶注入孔24。
然后，将铜箔等的导电箔粘接到绝缘膜14上，利用刻蚀形成布线图形18。如果将凸部18a的形成区域掩蔽起来，以减薄除此以外的部分的方式进行刻蚀并除去掩模，则可形成凸部18a。
接着，从凸部18a的上方将各向异性导电膜20粘接到绝缘膜14上。详细地说，在多个凸部18a沿相对的二边排列的情况下，以平行的2条直线状粘接各向异性导电膜20，在凸部18a在四边上排列的情况下，与其相对应，以描绘出矩形的方式粘接各向异性导电膜20。
这样，使凸部18a与电极13相对应，将上述绝缘膜14压在半导体芯片12上，用凸部18a和电极13来挤压各向异性导电膜20。这样，可谋求凸部18a与电极13的导电性的连接。
其次，从凝胶注入孔24注入树脂，在绝缘膜14与半导体芯片12之间形成树脂22。
然后，通过贯通孔14a在布线图形18上设置焊锡，形成球状的外部电极16。具体地说，例如通过使用了焊锡糊剂的焊锡印刷、或将焊锡球放置在布线图形18上，来形成外部电极16。
利用这些工序，可得到半导体装置10。再有，在本实施形态中，使用了各向异性导电膜20，但也可使用各向异性导电粘接剂来代替各向异性导电膜20。各向异性导电粘接剂除了未形成片状这一点之外，与各向异性导电膜20的结构相同。
按照本实施形态，由于粘接剂17介于绝缘膜14上形成的贯通孔14a与外部电极16之间，故可吸收施加到外部电极16上的应力(热应力或机械的应力)。为了得到这样的结构，如上所述，预先在绝缘膜14上设置粘接剂17，从该粘接剂17一侧进行贯通孔14a的冲切工序即可。通过这样做，在与贯通孔14a的冲切工序的同时，可将粘接剂17的一部分引入到贯通孔14a内。
其次，图3是示出本实施形态的变形例的图。在该变形例中，不预先将粘接剂17引入到绝缘膜14的贯通孔14a内，在外部电极26的形状方面具有特征。由于粘接剂17也可不引入到贯通孔14a内，故可使用没有粘接剂17的印刷基板来代替绝缘膜14。
即，外部电极26的基端部26a的直径d与突出部26b的直径φ具有φ≤d的关系。换言之，位于贯通孔14a的开口端部的基端部26a与在贯通孔14a的外侧从绝缘膜14突出的突出部26b大致相等，或基端部26a比突出部26b大。特别是，两者最好大致相等。通过这样做，不形成从突出部26b到基端部26a呈缩小的形状。
按照该结构，由于在外部电极26中没有呈缩小的形状，故施加到外部电极26上的应力不会集中。因此，可使应力分散，防止产生裂纹。再有，如果采取粘接剂17进入贯通孔14a内的结构，则可进一步提高应力缓和性能。
此外，其制造方法与上述的实施形态相同。但是，由于不一定需要使粘接剂17进入贯通孔14a内的工序，故不限定冲切贯通孔14a的方向。此外，在该变形例中，可利用溅射法在绝缘膜14上形成布线图形18等，来省略粘接剂17。但是，在该变形例中，不妨碍粘接剂17介于贯通孔14a与外部电极26之间。
(第2实施形态)
图4是示出与第2实施形态有关的半导体装置的图。该半导体装置110包括：半导体元件112，作为基板的一例的绝缘膜14(与第1实施形态的结构相同)和多个外部电极16(与第1实施形态的结构相同)。在半导体元件112的多个电极(未图示)上设置了凸点113。凸点113大多是金球凸点、镀金凸点，但也可以是焊锡球。将绝缘膜14作成比半导体元件112大的形状。
将导电部件118粘接在绝缘膜14的一个面上。将导电部件118作成从图1中示出的布线图形18省略了凸部18a的结构，利用粘接剂17粘接到绝缘膜14上。
利用设置在绝缘膜14上的形成了导电部件118的整个面上的各向异性导电材料120，可谋求凸点113与导电部件118的导电性的连接。各向异性导电材料120本身可使用与图1中示出的各向异性导电膜20相同的材料。通过这样做，各向异性导电材料120介于半导体元件112与绝缘膜14之间，半导体元件112上的形成了电极的面和绝缘膜14上的形成了导电部件118的面被覆盖而得到保护。其它的结构与第1实施形态相同。
关于与本实施形态有关的半导体装置110的制造方法，除了在绝缘膜14的整个面上设置各向异性导电材料120这一点外，可使用在第1实施形态中已说明的方法。在制造半导体装置110时，在基板上安装了半导体元件112之后，可按绝缘膜14的形状来冲切该基板。此外，在本实施形态中，关于外部电极16的形状，也可采用图3中示出的形态。
(第3实施形态)
图5是示出与本发明的第3实施形态有关的半导体装置的图。在该图中示出的半导体装置30中，利用引线40来连接布线图形38与半导体芯片32的电极33。布线图形38通过经粘接剂37粘接到基板34上而形成。存在着基板34与第1实施形态相同是绝缘膜的情况或是印刷基板的情况。
此外，在基板34的布线图形38的形成面上设置了应力缓和层42。应力缓和层42由可作为第1实施形态的树脂22被选择的材料来形成。通过粘接剂46，将与半导体芯片32的具有电极33的面相反一侧的面粘接到该应力缓和层42上。
在基板34中形成了贯通孔34a。通过该贯通孔34a，在布线图形38上形成了外部电极36。详细地说，在布线图形38上形成了外部电极36，使其在基板34中的与布线图形38相反一侧的面突出。而且，半导体芯片32的外周和基板34的具有布线图形38的面用树脂44来密封。
将外部电极36作成图1中示出的结构、或与图3中示出的外部电极26相同的结构，可实现相同的效果。或者，也可与图1中示出的实施形态相同，构成为使粘接剂37介于贯通孔34a与外部电极36之间。
本实施形态与第1实施形态相比，在将引线40使用于半导体芯片32的电极33与布线图形38的连接这一点和利用树脂44来密封半导体芯片32等这一点上不同，但关于应力缓和的功能，与第1实施形态相同。
(第4实施形态)
图6是示出与本发明的第4实施形态有关的半导体装置的图。该图中示出的半导体装置130在粘接剂37介于贯通孔34a与外部电极136之间这一点上与图5中示出的半导体装置30不同。
(第5实施形态)
图7是示出与本发明的第5实施形态有关的半导体装置的图。该图中示出的半导体装置210在导电部件118不使用粘接部件、而是直接在基板214上形成这一点上与图4中示出的半导体装置110不同。在图7中，对于与图4中示出的半导体装置110相同的结构附以相同的符号。再有，在本实施形态中，以面朝下的方式来安装半导体元件112，但也可应用图6中示出的面朝上的安装。
基板214用其弹性比外部电极16高的材料来形成。此外，在基板214的贯通孔214a的内壁面上形成了凸部220。在图8A和图8B中示出凸部220的形成方法。
基板214在没有设置粘接剂这一点上与图2中示出的绝缘膜14不同。如图8A中所示，利用冲切模具1对放置在支承模具2上的基板214如图8B中所示那样进行冲切，形成贯通孔214a。通过这样做，构成基板214的材料向贯通孔214a的内部突出，形成了凸部220。例如，可在基板214的一个面上，将形成贯通孔214a端部的部分之一部引入到贯通孔214a内，形成凸部220，也可以在基板214的厚度的中间部分中，在贯通孔2 14a的内壁面上形成凸部220。此外，关于凸部220，可使贯通孔214a的周端部整体向贯通孔214a的内侧突出，形成环状，也可以只使贯通孔214a周端部的一部分向贯通孔214a的内侧突出，而构成。通过形成凸部220，如图4中所示，可起到与粘接剂17介于贯通孔14a内的结构相同的效果。即，由于与贯通孔214a的内壁面是平坦的情况相比，凸部220容易变形，故可缓和施加到外部电极16上的应力。
这样，在形成了贯通孔214a之后，在基板214上形成导电部件118，构成2层基板。例如，在基板214是热塑性的情况下，对其加热使之软化，通过使导电箔密接于其上，在不使用粘接剂的情况下进行粘接，对其进行刻蚀，可形成导电部件218。或者，也可应用溅射法。
或者，如图9中所示，也可使用激光器320在形成了导电部件310的基板300中形成贯通孔330。此时，在贯通孔330中也形成凸部332。作为激光器320，如果使用CO2激光器，则容易形成凸部332，但也可使用受激准分子激光。
或者，如图10中所示，也可在形成了导电部件410的基板400上，形成具有与贯通孔对应的开口422的抗蚀剂420，通过施行湿法刻蚀，形成贯通孔430。此时，由于在贯通孔430的内壁面上存在凹凸，故也可形成凸部432。
再有，上述的实施形态是应用了CSP型封装体的半导体装置，但本发明也可适用于为了谋求多引脚化而使用比半导体芯片宽的基板的BGA型的封装体。
在图11中，示出安装了利用与上述的实施形态有关的方法制造的半导体装置1100的电路基板1000。电路基板1000一般使用例如玻璃环氧基板等的有机系列基板。在电路基板1000中形成例如由铜构成的布线图形使之成为所希望的电路，同时在该电路基板1000上设置了焊锡球。而且，通过将布线图形的焊锡球与半导体装置1100的外部电极以机械方式连接起来，可谋求这些部件的电导通。
此时，由于在半导体装置1100中设置了吸收因与外部的热膨胀差及机械应力而产生的变形的结构，故即使将本半导体装置1100安装在电路基板1000上，也可提高连接时和其后的可靠性。
再有，也可将安装面积缩小到用裸芯片进行安装的面积。因此，如果将该电路基板1000用于电子装置，则可谋求电子装置本身的小型化。此外，在相同的面积内可确保更大的安装空间，也可谋求高功能化。
而且，作为具备该电路基板1000的电子装置，在图12中示出了笔记本型个人计算机1200。
再有，也可将本发明应用于各种面安装用的电子元件，而不问其是有源元件还是无源元件。作为电子元件，例如，有：电阻器、电容器、线圈、振荡器、滤波器、温度传感器、热敏电阻、变阻器、电位器或熔断器等。

Claims (38)

1.一种半导体装置，具有：
形成了贯通孔的基板；
具有电极的半导体元件；
导电部件，在上述基板的一个面的一侧通过粘接部件粘接到包含上述贯通孔上方的上述一个面的任意区域上，同时在由上述粘接部件粘接的面的相反一侧的面上与上述半导体元件的电极进行导电性的连接；以及
外部电极，通过上述贯通孔与上述导电部件连接，同时被设置在上述基板的另一个面的外侧，其特征在于：
在上述贯通孔内，上述粘接部件的一部分介于形成上述贯通孔的内壁面与上述外部电极之间。
2.如权利要求1中所述的半导体装置，其特征在于：
将上述粘接部件的一部分引入到上述贯通孔内而介于其间。
3.一种半导体装置，具有：
形成了贯通孔的基板；
具有电极的半导体元件；
导电部件，在上述基板的一个面的一侧，直接在包含上述贯通孔上方的上述一个面的任意区域上形成，与上述半导体元件的电极进行导电性的连接；以及
外部电极，通过上述贯通孔与上述导电部件连接，同时被设置在上述基板的另一个面的外侧，其特征在于：
上述基板由其弹性比上述外部电极高的材料形成，
利用构成上述基板的上述材料，在上述贯通孔的内壁面上形成凸部。
4.如权利要求1中所述的半导体装置，其特征在于：
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
5.如权利要求3中所述的半导体装置，其特征在于：
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
6.如权利要求1中所述的半导体装置，其特征在于：
上述基板是绝缘基板。
7.如权利要求3中所述的半导体装置，其特征在于：
上述基板是绝缘基板。
8.如权利要求1中所述的半导体装置，其特征在于：
上述基板是印刷基板。
9.如权利要求3中所述的半导体装置，其特征在于：
上述基板是印刷基板。
10.如权利要求1中所述的半导体装置，其特征在于：
上述外部电极由焊锡形成。
11.如权利要求3中所述的半导体装置，其特征在于：
上述外部电极由焊锡形成。
12.如权利要求1中所述的半导体装置，其特征在于：
上述基板的外形比半导体元件的外形大。
13.如权利要求3中所述的半导体装置，其特征在于：
上述基板的外形比半导体元件的外形大。
14.如权利要求1中所述的半导体装置，其特征在于：
上述半导体元件的上述电极通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料与上述导电部件进行导电性的连接。
15.如权利要求3中所述的半导体装置，其特征在于：
上述半导体元件的上述电极通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料与上述导电部件进行导电性的连接。
16.如权利要求1中所述的半导体装置，其特征在于：
上述半导体元件的上述电极通过引线与上述导电部件进行导电性的连接。
17.如权利要求3中所述的半导体装置，其特征在于：
上述半导体元件的上述电极通过引线与上述导电部件进行导电性的连接。
18.一种电路基板，其特征在于：
安装了如权利要求1、2、4、6、8、10、12、14、16的任一项中所述的半导体装置。
19.一种电路基板，其特征在于：
安装了如权利要求3、5、7、9、11、13、15、17的任一项中所述的半导体装置。
20.一种电子装置，其特征在于：
具有如权利要求18中所述的电路基板。
21.一种电子装置，其特征在于：
具有如权利要求19中所述的电路基板。
22.一种半导体装置的制造方法，其特征在于，包括：
准备在一个面上设置了粘接部件的基板的工序；
在通过从设置了上述粘接部件的面一侧朝向其相反一侧的面对上述基板进行起模，形成贯通孔的同时，将上述粘接部件的一部分引入到上述贯通孔内的工序；
通过上述粘接部件，将导电部件粘接到上述基板中的包含上述贯通孔上方的上述一个面的任意区域上的工序；
通过上述贯通孔和引入到该贯通孔内的上述一部分粘接部件的内侧，在上述导电部件上设置外部电极的形成材料，形成从上述导电部件的形成面的相反一侧的面突出的外部电极的工序；以及
将半导体元件的电极导电性地连接到上述导电部件上的工序。
23.一种半导体装置的制造方法，其特征在于，包括：
准备形成在内壁面上具有凸部的贯通孔、同时直接在包含上述贯通孔上方的区域中形成导电部件、由其弹性比外部电极高的材料构成的基板的工序；
通过上述贯通孔，在上述导电部件上设置外部电极的形成材料，形成从上述导电部件的形成面的相反一侧的面突出的外部电极的工序；以及
将半导体元件的电极导电性地连接到上述导电部件上的工序。
24.如权利要求23中所述的半导体装置的制造方法，其特征在于：
在形成上述导电部件之前，包括对上述基板进行起模的工序，在上述起模的工序中，将上述基板的一部分引入到上述贯通孔中，来形成凸部。
25.如权利要求23中所述的半导体装置的制造方法，其特征在于：
使用激光形成上述贯通孔。
26.如权利要求23中所述的半导体装置的制造方法，其特征在于：
利用湿法刻蚀形成上述贯通孔。
27.如权利要求22中所述的半导体装置的制造方法，其特征在于：
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
28.如权利要求23中所述的半导体装置的制造方法，其特征在于：
上述外部电极的位于上述贯通孔的内侧的基端部的直径d与从上述贯通孔突出的突出部的直径φ具有φ≤d的关系。
29.如权利要求22中所述的半导体装置的制造方法，其特征在于：
上述基板是绝缘膜或印刷基板。
30.如权利要求23中所述的半导体装置的制造方法，其特征在于：
上述基板是绝缘膜或印刷基板。
31.如权利要求22中所述的半导体装置的制造方法，其特征在于：
上述外部电极的形成材料是焊锡。
32.如权利要求23中所述的半导体装置的制造方法，其特征在于：
上述外部电极的形成材料是焊锡。
33.如权利要求22中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序之后，包括在半导体元件的外侧对上述基板进行冲切的工序。
34.如权利要求23中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序之后，包括在半导体元件的外侧对上述基板进行冲切的工序。
35.如权利要求22中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料将上述电极导电性地连接到上述导电部件上。
36.如权利要求23中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，通过将导电性粒子分散在粘接剂中而构成的各向异性导电材料将上述电极导电性地连接到上述导电部件上。
37.如权利要求22中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，通过引线将上述电极导电性地连接到上述导电部件上。
38.如权利要求23中所述的半导体装置的制造方法，其特征在于：
在将上述半导体元件的上述电极导电性地连接到上述导电部件上的工序中，通过引线将上述电极导电性地连接到上述导电部件上。
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