CN114152857A - Preparation method of two-dimensional material field effect transistor failure sample - Google Patents
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- CN114152857A CN114152857A CN202111486151.9A CN202111486151A CN114152857A CN 114152857 A CN114152857 A CN 114152857A CN 202111486151 A CN202111486151 A CN 202111486151A CN 114152857 A CN114152857 A CN 114152857A
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- 239000000463 material Substances 0.000 title claims abstract description 76
- 230000005669 field effect Effects 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 230000015556 catabolic process Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- -1 transition metal sulfide Chemical class 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 15
- 230000007246 mechanism Effects 0.000 abstract description 8
- 238000011160 research Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 52
- 230000005540 biological transmission Effects 0.000 description 10
- 235000009508 confectionery Nutrition 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 238000005464 sample preparation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001963 growth medium Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention provides a preparation method of a two-dimensional material field effect transistor failure sample, belonging to the field of transistor failure and comprising the following steps: (1) applying positive voltage on an electrode of a two-dimensional material field effect transistor, and measuring by adopting an I-V sweep mode to obtain a voltage P1 when the current is suddenly changed (0.5-1.5 times); the two-dimensional material field effect transistor comprises an electrode, a gate dielectric layer, a channel and a substrate; (2) performing constant-voltage breakdown on the two-dimensional material field effect transistor in the step (1) to obtain a sample after breakdown; the breakdown voltage of the constant voltage is P1- (0.6-0.8) V. The invention controls the voltage during breakdown, simulates and accelerates the breakdown process of the two-dimensional material field effect transistor, controls the breakdown degree, avoids the two-dimensional material in the two-dimensional material field effect transistor from being completely burnt, is closer to an actual failure sample, and is more beneficial to the research of the failure process and mechanism of the transistor by observing the appearance of the sample after breakdown.
Description
Technical Field
The invention relates to the technical field of transistor failure, in particular to a preparation method of a two-dimensional material field effect crystal failure sample.
Background
With the rapid development of the microelectronic industry, the integration level of devices is higher and higher, the size of field effect transistors is also synchronously reduced, the short channel effect is increasingly aggravated, so that the speed and power consumption of the traditional silicon-based device gradually reach physical limits, and a new direction is provided for solving the problem by using a new two-dimensional material as a channel material. Since the discovery of graphene, graphene has received extensive attention from academia due to its excellent mechanical, electrical and optoelectronic properties, and transition metal sulfides have also been the focus of research since then. The two-dimensional material can participate in forming a novel two-dimensional material field effect transistor with high performance, low power consumption, high on-off ratio and short channel.
However, as the size of the device is continuously reduced, the gate dielectric layer of the two-dimensional material field effect transistor is also thinned synchronously, so that leakage current inevitably occurs, the continuously increased leakage current gradually damages a two-dimensional channel, the electron mobility of the two-dimensional material field effect transistor is influenced, and finally the transistor is thoroughly aged, but the process is slow and difficult to master and can last for several years, and meanwhile, the two-dimensional material field effect transistor still has a certain distance from mass production, so that the acquisition of a failed two-dimensional material field effect transistor sample is very difficult. In the prior art, in order to obtain a failure sample, a transistor is generally subjected to constant voltage breakdown, the voltage during breakdown is generally set according to experience without a specific numerical value, so that the structural damage of the transistor is serious, and the research on a failure process and a failure mechanism is not facilitated.
Therefore, how to obtain a failure sample of the two-dimensional material field effect transistor for researching the failure process and mechanism becomes a difficulty in the prior art.
Disclosure of Invention
The invention aims to provide a preparation method of a two-dimensional material field effect transistor failure sample. The failure sample prepared by the method is closer to the actual failure sample, and the subsequent failure process and mechanism research are facilitated.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a two-dimensional material field effect transistor failure sample, which comprises the following steps:
(1) applying positive voltage on an electrode of a two-dimensional material field effect transistor, and measuring by adopting an I-V sweep mode to obtain a voltage P1 when the current is suddenly changed (0.5-1.5 times); the two-dimensional material field effect transistor comprises an electrode, a gate dielectric layer, a channel and a substrate;
(2) performing constant-voltage breakdown on the two-dimensional material field effect transistor in the step (1) to obtain a sample after breakdown; the breakdown voltage of the constant voltage is P1- (0.6-0.8) V.
Preferably, the material of the channel in the two-dimensional material field effect transistor comprises graphene or a transition metal sulfide.
Preferably, the voltage variation of the I-V sweep mode in the step (1) is started from 0V.
Preferably, the I-V sweep mode in the step (1) increases by a step size of (1-2) V per second.
Preferably, the I-V sweep pattern in the step (1) increases by 1.5V per second.
Preferably, the current limit of the I-V sweet mode in the step (1) is (0.05-0.2) mA.
Preferably, the I-V sweep mode current limit in the step (1) is 0.1 mA.
Preferably, the current limiting of the constant voltage breakdown in the step (2) is (0.5-1.5) mA.
Preferably, in the step (2), the current is measured when the constant voltage breaks down, and the pressing is stopped after the current value suddenly increases.
Preferably, the sudden increase in the step (2) is 30 to 100% in amplitude.
The invention provides a preparation method of a two-dimensional material field effect transistor failure sample, which comprises the following steps: (1) applying positive voltage on an electrode of a two-dimensional material field effect transistor, and measuring by adopting an I-V sweep mode to obtain a voltage P1 when the current is suddenly changed (0.5-1.5 times); the two-dimensional material field effect transistor comprises an electrode, a gate dielectric layer, a channel and a substrate; (2) performing constant-voltage breakdown on the two-dimensional material field effect transistor in the step (1) to obtain a sample after breakdown; the breakdown voltage of the constant voltage is P1- (0.6-0.8) V. According to the invention, positive voltage is applied to the two-dimensional material field effect transistor electrode to obtain a proper voltage P1, then P1- (0.6-0.8) V is used as the voltage for constant voltage breakdown, the voltage during breakdown is controlled, the breakdown process of the two-dimensional material field effect transistor is simulated and accelerated, the breakdown degree is controlled to avoid the two-dimensional material in the two-dimensional material field effect transistor from being completely burnt, the two-dimensional material field effect transistor is closer to an actually used failure sample, and the study on the failure process and mechanism of the transistor is facilitated by observing the appearance of the sample after breakdown.
Drawings
FIG. 1 is a flow chart of a method for preparing a failure sample of a two-dimensional field effect transistor according to example 1 of the present invention;
FIG. 2 is a graph showing the change of current with time when a constant voltage is applied in step (3) of example 1 of the present invention;
FIG. 3 is a graph showing a failure sample obtained in step (3) of example 1 of the present invention;
FIG. 4 is a high resolution TEM image of a sample obtained from a failed sample prepared in example 1 of the present invention.
Detailed Description
The invention provides a preparation method of a two-dimensional material field effect transistor failure sample, which comprises the following steps:
(1) applying positive voltage on an electrode of a two-dimensional material field effect transistor, and measuring by adopting an I-V sweep mode to obtain a voltage P1 when the current is suddenly changed (0.5-1.5 times); the two-dimensional material field effect transistor comprises an electrode, a gate dielectric layer, a channel and a substrate;
(2) performing constant-voltage breakdown on the two-dimensional material field effect transistor in the step (1) to obtain a sample after breakdown; the breakdown voltage of the constant voltage is P1- (0.6-0.8) V.
According to the invention, positive voltage is applied to an electrode of a two-dimensional material field effect transistor, and voltage P1 when current is suddenly changed (0.5-1.5) times is obtained by measuring in an I-V sweep mode.
In the invention, the two-dimensional material field effect transistor comprises an electrode, a gate dielectric layer, a channel and a substrate.
In the present invention, the material of the channel in the two-dimensional material field effect transistor preferably includes graphene or a transition metal sulfide.
The invention has no special limitation on the materials of the electrode, the gate dielectric layer and the substrate in the two-dimensional material field effect transistor, and the materials of the electrode, the gate dielectric layer and the substrate in the two-dimensional material field effect transistor, which are well known by the technical personnel in the field, can be adopted.
The source of the two-dimensional material field effect transistor is not particularly limited in the present invention, and a commercially available product or a product prepared by a conventional preparation method well known to those skilled in the art may be used.
The voltage P1 when the current is suddenly changed (0.5-1.5) times is obtained by measuring in an I-V sweet mode, and the voltage P1 when the current is suddenly changed 1 time is more preferable. In the present invention, the voltage variation of the I-V sweet mode is preferably from 0V; the I-V sweet mode preferably increases the step length per second to be (1-2) V, more preferably (1.2-1.8) V, further preferably (1.4-1.6) V, and most preferably 1.5V; the I-V sweet mode current limiting is preferably (0.05-0.2) mA, and more preferably 0.1 mA. The invention limits each parameter and voltage P1 in the I-V sweet mode within the range, and can ensure that enough voltage can break down the two-dimensional material field effect transistor.
After the voltage P1 is obtained, the two-dimensional material field effect transistor is subjected to constant voltage breakdown, and a breakdown sample is obtained.
In the invention, the voltage of the constant voltage breakdown is P1- (0.6-0.8) V, and preferably P1-0.7V. The invention limits the voltage of constant voltage breakdown in the range, can ensure enough voltage to break down the two-dimensional material field effect transistor, can control the degree of breakdown, and is more beneficial to obtaining a failure sample which is closer to an actual failure sample.
In the invention, the current limiting of the constant voltage breakdown is preferably (0.5-1.5) mA, and more preferably 1 mA. In the present invention, it is preferable that the current is measured at the time of the constant voltage breakdown, and the voltage application is stopped after the current value suddenly increases. In the present invention, the sudden increase is preferably 30 to 100% in amplitude.
According to the invention, each parameter of constant voltage breakdown is limited in the range, the degree of breakdown can be controlled, the two-dimensional material in the two-dimensional material field effect transistor is prevented from being completely burnt, a failure sample with the appearance closer to that of an actual failure sample can be obtained, and the study on the failure process and mechanism of the transistor can be facilitated by observing the appearance of the sample after breakdown.
After the invalid sample is obtained, the invalid sample is preferably prepared by the method, so that the sample meeting the requirement of shooting a high-resolution transmission electron microscope picture is obtained.
In the present invention, the sample preparation is preferably performed in a focused ion beam system. The operation of the sample preparation is not particularly limited in the present invention, and a sample preparation method known to those skilled in the art may be used to obtain a sample meeting the requirements.
After the test sample is obtained, the invention preferably performs transmission electron microscope test on the test sample to obtain a transmission electron microscope image of the two-dimensional material field effect transistor failure sample, and the transmission electron microscope image is used for researching the failure mechanism and the failure process of the two-dimensional material field effect transistor failure sample.
The operation of the transmission electron microscope test is not particularly limited in the present invention, and the transmission electron microscope test technical scheme known to those skilled in the art can be adopted.
According to the invention, positive voltage is applied to the two-dimensional material field effect transistor electrode to obtain a proper voltage P1, then P1- (0.6-0.8) V is used as the voltage for constant voltage breakdown, the voltage during breakdown is controlled, the breakdown process of the two-dimensional material field effect transistor is simulated and accelerated, the breakdown degree is controlled to avoid the two-dimensional material in the two-dimensional material field effect transistor from being completely burnt, the two-dimensional material field effect transistor is closer to an actual failure sample, and the study on the failure process and mechanism of the transistor is facilitated by observing the appearance of the sample after breakdown.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A flow chart of the two-dimensional material field effect transistor failure sample preparation method of the embodiment is shown in fig. 1, and the two-dimensional material, the growth medium layer and the electrode are firstly transferred at fixed points by mechanical stripping to obtain the two-dimensional material field effect transistor, then the breakdown voltage P1 is tested in a Sweep mode, then long-time constant voltage breakdown with the breakdown voltage P1-0.7V is carried out, a focused ion beam is used for preparing a sample at the electrode blacking position, and finally the appearance of the two-dimensional material is observed by a transmission electron microscope, specifically:
(1) obtaining few-layer MoS using mechanical stripping2Then the obtained few-layer MoS2Transferring to Si substrate as channel material, and depositing HfO by atomic layer2Depositing the Au electrode on the gate dielectric layer by a self-alignment process to obtain a two-dimensional material field effect transistor;
(2) placing a two-dimensional material field effect transistor on a probe platform, firstly pulling out a scratch near a lower needle position by using a probe as a mark, applying high voltage to the probe, adopting an I-V sweep mode, increasing the step length from 0V to 15V every second by 1.5V, limiting the current by 0.1mA, finding that the current has a process of suddenly increasing, stopping pressurizing when the current increases to the first time of the sudden increase, and recording the voltage value at the moment as 8V;
(3) applying a constant voltage on a two-dimensional material field effect transistor, wherein the voltage value is 7.3V obtained by 8-0.7V, the current is limited to 1mA, after the current is observed to suddenly increase, the pressure is stopped, the amplitude of the sudden increase is 50%, a failure sample is obtained, and black scorching can be seen in the failure sample.
In the focused ion beam system, the sample preparation area is positioned in the burnt black area of the failed sample prepared in the embodiment, so as to obtain a sample which is in line with the shooting of a high-resolution transmission electron microscope, and then the sample is placed into the transmission electron microscope to shoot a high-resolution image.
Example 1 step (3) the current when a constant voltage is applied is shown in fig. 2. As can be seen from fig. 2, there is a sudden increase in current as the pressurization process proceeds.
FIG. 3 is a photograph of a failure sample obtained in step (3) of example 1. The black charred portion on the spent sample can be seen in fig. 3.
FIG. 4 shows a transmission electron microscope high resolution image of a sample obtained from a failed sample prepared in example 1, in which the two-layered black material is MoS2The weakened, damaged or deformed part of the linear black material is a breakdown region.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
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