CN108557755B - High-frequency alternating current driven local anodic oxidation processing method - Google Patents

Abstract

The present invention provides a local anodizing processing method driven by high-frequency alternating current, comprising: providing a substrate, a sample to be processed and a conductor probe, the sample to be processed is located on the substrate, the substrate The bottom is a double-layer structure including a dielectric layer and a conductive layer, the dielectric layer is located above the conductive layer and is in contact with the sample to be processed, and a high-frequency alternating current is applied between the conductor probe and the conductive layer voltage, the conductor probe moves along the processing path on the surface of the sample to be processed, so that the sample to be processed on the processing path is oxidized. The local anodization processing method driven by high frequency alternating current provided by the invention is suitable for processing and etching of low-dimensional nanometer samples, the process is simple, no processing of micro-nano electrodes is required, and the processing quality is better than the traditional direct current anodization method.

Description

A local anodizing processing method driven by high frequency alternating current

technical field

The invention relates to the field of nanometer processing technology, in particular to a local anodic oxidation processing method driven by high-frequency alternating current.

Background technique

At present, the commonly used micro-nano processing technologies mainly include electron beam exposure (Electron Beam Lithography), optical exposure (Photon Lithography), scanning probe direct writing (Scanning Probe Lithography) and so on. Electron beam exposure and optical exposure need to cover the surface of the sample with a layer of organic resist in the process of processing, and then irradiate the resist surface with high-energy electron beam or light beam to form the desired pattern, and then transfer the pattern to the sample by etching and other means Finally, the resist is removed. The disadvantage is that organic resists are often difficult to remove, and chemical solvents need to be introduced to remove resists, which will further contaminate samples.

The operation steps of scanning probe direct writing processing are simple, and there is no need to introduce organic substances such as resists, and it is a clean processing technology. The basic working principle is that when the scanning probe is in contact with the surface of the material, the properties of the material are locally changed by force, heat, light, electricity or chemical action, so that the desired pattern is directly formed on the surface of the material. Local anodization is a very effective principle method in the direct writing process of scanning probes. The specific steps are as follows: apply a DC voltage between the sample and the tip of the scanning probe, the sample is connected to the positive electrode, the needle tip is connected to the negative electrode, and the needle tip is connected to the negative electrode. Due to the existence of a strong electric field between the sample and the sample, water molecules will be adsorbed, and a "water bridge" composed of an adsorbed water layer will be formed. The water bridge, the sample and the needle tip constitute a nanoscale electrochemical reaction cell. The surface of the sample in the area covered by the water bridge is changed by an electrochemical reaction. The position where the electrochemical reaction occurs moves with the position of the needle tip, and the desired pattern can be formed on the sample by controlling the needle tip to move according to the processing path.

The existing localized anodic oxidation method uses a DC voltage. When the substrate of the nano-sample to be processed is an insulator, electrodes need to be prepared on the nano-sample in advance to facilitate the connection of wires. For small samples at the micro-nano scale, the process of preparing electrodes on their surfaces is complicated, and electrodes need to be prepared by electron beam exposure or optical exposure combined with evaporation coating technology. This procedure is not only complicated, but also introduces organic contamination to the sample. Therefore, when the existing direct current local anodization technology processes micro-nano-scale samples, the processing steps are cumbersome and organic contamination is prone to occur. In addition, when the existing processing technology is used to etch materials such as graphene, the etched part is usually not completely oxidized, and the generated solid oxidation product will remain on the surface of the sample.

Therefore, for the high-quality processing of nanoscale samples on insulating substrates, it is necessary to propose a new localized anodization processing method to solve the above problems.

SUMMARY OF THE INVENTION

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a novel local anodization processing method, which is used to solve the processing difficulties and processing difficulties of the existing DC local anodization technology for the target nanomaterial on the insulating substrate. low quality issues.

In order to achieve the above purpose and other related purposes, the present invention provides a local anodizing processing method driven by high frequency alternating current, characterized in that the local anodizing processing method driven by high frequency alternating current comprises:

A substrate, a sample to be processed and a conductor probe are provided, the sample to be processed is located on the substrate, the substrate is a double-layer structure including a dielectric layer and a conductive layer, and the dielectric layer is located on the substrate Above the conductive layer and in contact with the sample to be processed, a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe moves along the processing path on the surface of the sample to be processed to The to-be-processed sample on the processing path is oxidized.

As a preferred solution of the present invention, the dielectric layer material includes SiO ₂ , hBN, GeO ₂ , Al ₂ O ₃ , HfO ₂ , BaTiO ₃ , PMN-PT, mica, PMMA, PC or PVC.

As a preferred solution of the present invention, the conductive layer material includes Si, Ge, graphite, metal or conductive ionic liquid.

As a preferred solution of the present invention, the sample to be processed is a conductive low-dimensional nanomaterial.

As a preferred solution of the present invention, the conductive low-dimensional nanomaterials at least include graphene or carbon nanotubes, and the graphene or carbon nanotubes are oxidized to carbon monoxide or carbon dioxide during the processing, so as to be etched remove.

As a preferred solution of the present invention, the conductor probe is an atomic force microscope probe or a scanning tunneling microscope probe, and the processing of the sample to be processed is performed in an atomic force microscope or a scanning tunneling microscope.

As a preferred solution of the present invention, the frequency of the high-frequency alternating current is greater than 1000 Hz.

As a preferred solution of the present invention, during the entire processing process, the sample to be processed and the conductor tip are connected through a nanometer-sized water bridge.

As described above, the present invention provides a local anodizing processing method driven by high-frequency alternating current, which has the following beneficial effects:

The present invention introduces a high-frequency alternating current driven local anodic oxidation processing method, which is suitable for processing micro-nano samples on insulating substrates, has simple process, does not need to process micro-nano electrodes, is easy to operate, and does not produce organic pollution. In addition, the etched part is completely oxidized, no solid incomplete oxidation product remains, and the processing quality is better than the traditional direct current anodizing method.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a local anodizing processing method driven by a high frequency alternating current provided in an embodiment of the present invention.

FIG. 2 is a schematic diagram showing the etching of the localized anodic oxidation processing method driven by the high frequency alternating current provided in the embodiment of the present invention.

FIG. 3 shows an enlarged cross-sectional view of the local anodization processing method driven by a high frequency alternating current provided in an embodiment of the present invention at the beginning of etching.

FIG. 4 shows an enlarged cross-sectional view during the etching process of the high-frequency alternating current-driven local anodization processing method provided in the embodiment of the present invention.

FIG. 5 shows an atomic force microscope topography of the etched graphene nanoribbons provided in Example 1 of the present invention.

FIG. 6 shows an atomic force microscope topography of the carbon nanotubes provided in Example 2 of the present invention before cutting.

FIG. 7 shows an atomic force microscope topography of the cut carbon nanotubes provided in Example 2 of the present invention.

Component label description

11 Substrate

111 Dielectric layer

112 Conductive layer

12 Samples to be processed

13 Conductor Probes

14 High frequency AC voltage

15 Water Bridge

16 Machining path

17 Equivalent resistance

18 Equivalent capacitance

21 Single-layer graphene samples

22 Etch Path

23 Box selection area

24 Partial enlargement

31 Carbon nanotubes before cutting

32 cutting paths

33 Cleaved carbon nanotubes

Detailed ways

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 1 through 7. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, although the diagrams only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the shape, quantity and proportion of each component can be arbitrarily changed during actual implementation, and the component layout shape may also be more complicated.

As shown in FIG. 1 to FIG. 4 , the present invention provides a local anodizing processing method driven by high frequency alternating current, and the local anodizing processing method driven by high frequency alternating current includes:

A substrate 11 , a sample to be processed 12 and a conductor probe 13 are provided, the sample to be processed 12 is located on the substrate 11 , and the substrate 11 is a double-layer structure including a dielectric layer 111 and a conductive layer 112 , the dielectric layer 111 is located above the conductive layer 112 and is in contact with the sample to be processed 12 , and a high-frequency alternating voltage 14 is applied between the conductor probe 13 and the conductive layer 112 , the conductor probe The needle 13 moves along the processing path 16 on the surface of the sample to be processed 12 , so that the sample to be processed 12 on the processing path 16 is oxidized.

Referring to FIG. 1 , the local anodization processing method driven by high frequency alternating current according to the present invention can be used for sample processing of insulating substrates. The to-be-processed sample 12 is prepared on the substrate 11 . The substrate 11 is divided into two layers, a dielectric layer 111 and a conductive layer 112, the dielectric layer 111 is connected to the sample to be processed 12; the conductor probe 13 and the conductive layer 112 are respectively connected to the high-frequency AC voltage 14. By applying the high-frequency alternating voltage 14, the conductor probe 13 moves on the surface of the sample to be processed 12 according to the processing path 16, and the processing process is completed.

The to-be-processed sample 12 is oxidized under the action of the high-frequency AC voltage 14. If the to-be-processed sample 12 becomes a volatile substance after oxidation, for example, carbon is oxidized to carbon monoxide or carbon dioxide, the processing process is a The etching process can be used to etch the to-be-processed sample 12; if the to-be-processed sample 12 is still solid after oxidation, the process forms an oxide pattern of the material on the surface of the material. As shown in FIG. 2 , the sample to be processed 12 becomes a volatile substance after oxidation, which is an etching process. The conductor probe 13 moves along the processing path 16, and the sample to be processed 12 on the moving path is oxidized and then volatilized and removed, thereby completing the etching process. Only the tip portion of the conductor probe 13 is shown in FIG. 2 .

Please refer to FIGS. 3 and 4 . In FIG. 3 , at the beginning of the processing process, the conductor probe 13 is close to the sample to be processed 12 and has not yet contacted the surface of the sample to be processed. . In this system, the dielectric layer 111, the sample to be processed 12 and the conductive layer 112 above and below the dielectric layer 111 together constitute an equivalent capacitance 18, and its capacitance value is denoted as C; the conductor probe 13 and the to-be-processed sample 112 The non-uniform strong electric field between the surfaces of the sample 12 will adsorb water molecules in the air and form a water bridge 15 , and the resistance value of its equivalent resistance 17 is denoted as R. When a high-frequency AC voltage 14 is applied between the conductor probe 13 and the conductive layer 112, and its voltage is U _total , it is easy to calculate that the voltage U divided between the needle tip and the sample surface is U=U _total · R/(R+1/jωC), where ω is the AC angular frequency and j is the imaginary unit. According to the above formula and the needs of the local anodic oxidation reaction, the applied voltage U _total and the AC angular frequency ω can be adjusted to obtain the partial pressure U between the needle tip and the sample surface required for the reaction. The water bridge 15 , the needle tip of the conductor probe 13 and the surface of the sample to be processed 12 can be regarded as a nano-scale electrolytic cell. During the half cycle when the high-frequency alternating voltage 14 is at a positive voltage on the surface of the sample, the sample to be processed 12 acts as an anode, and an oxidation reaction occurs on the surface thereof. The nano-sized water bridge 15 can control the occurrence range of the oxidation reaction. Therefore, the localized electrochemical reaction occurs within the movement path of the needle tip. In the other half cycle of the high-frequency AC voltage 14, the sample to be processed 12 is connected to the cathode, and the conductor probe 13 is connected to the anode. Since the probe material is generally a stable inert metal material, it will not participate in the electrochemical reaction. As shown in FIG. 4 , it is an enlarged cross-sectional schematic diagram during the etching process. At this time, the conductor probes 13 are in contact with the substrate 11 , the sample to be processed 12 between them has been etched away before the contact, and the water bridge 15 around the conductor probes 13 It will still cover the unetched sample to be processed 12, and this part of the sample to be processed 12 will form a loop with the conductor probe 13, the dielectric layer 111 and the conductive layer 112. Oxidation and etching take place under the action of the alternating voltage 14 . When the conductor probe 13 slowly moves along the processing path 16 , the portion of the sample to be processed 12 that is gradually covered by the water bridge 15 will be gradually etched away.

As an example, the dielectric layer 111 material includes SiO ₂ , hBN, GeO ₂ , Al ₂ O ₃ , HfO ₂ , BaTiO ₃ , PMN-PT, mica, PMMA, PC, or PVC. Among them, the silicon dioxide (SiO ₂ ) layer can be used as the substrate of graphene; the hexagonal boron nitride (hBN) layer can be used as the substrate of carbon nanotubes.

As an example, the material of the conductive layer 112 includes Si, Ge, graphite, metal or conductive ionic liquid. Preferably, the conductive layer 112 is a silicon substrate.

As an example, the sample to be processed 12 is a conductive low-dimensional nanomaterial. The to-be-processed sample 12 itself has good electrical conductivity, and can be a one-dimensional nano-pipeline material or a two-dimensional nano-film material.

As an example, the conductive low-dimensional material includes at least graphene or carbon nanotubes, and the graphene or carbon nanotubes are oxidized to carbon monoxide or carbon dioxide during the processing, so as to be removed by etching. As mentioned above, when the carbon material is oxidized, it becomes gaseous carbon monoxide or carbon dioxide and volatilizes into the surrounding environment. Since the sample to be processed 12 is removed, the processing process is an etching process.

As an example, the conductor probe 13 is an atomic force microscope probe or a scanning tunneling microscope probe, and the processing of the sample to be processed is performed in an atomic force microscope or a scanning tunneling microscope. Preferably, the atomic force microscope is used as a nanoscale analytical instrument for studying the surface structure of solid materials, and its probe has a nanoscale scanning function and can move according to a set processing path. Its probe can also be configured as a conductor probe for the localized anodizing process in the present invention.

As an example, the frequency of the high frequency alternating current is greater than 1000 Hz. Preferably, the frequency range of the high-frequency alternating current applied between the conductor probe 13 and the conductive layer 112 is between 5kHz and 200kHz, and the amplitude range is between 5V and 20V. As mentioned above, by setting the appropriate applied voltage U _total and alternating current angular frequency ω, the partial pressure U between the needle tip and the sample surface required for the reaction can be obtained. The specific frequency of the high-frequency alternating current depends on the size of the sample 12 to be processed. The smaller the size, the higher the frequency required for processing.

As an example, when the atomic force microscope is used as the processing platform of the present invention, the sample to be processed 12 is processed after the working mode of the atomic force microscope is set to the contact mode. The atomic force microscope has working modes such as a contact mode and a tapping mode. In the contact mode, the probe directly contacts the surface of the substrate 112, and at this time, the distance between the probe and the sample to be processed 12 is the smallest, which is beneficial to the water bridge. 15 is formed to facilitate the electrochemical reaction where localized anodic oxidation occurs. Before processing the sample 12 to be processed, the working mode of the atomic force microscope can also be set to a tapping mode and the surface topography of the sample 12 to be processed can be obtained to determine the target area to be processed and the The steps of the machining path. The tapping mode is also one of the working modes of the atomic force microscope. In this working mode, the probe will not scratch the surface of the sample 12 to be processed. The sample to be processed 12 will be damaged before processing.

The moving speed of the tip of the atomic force microscope probe moving along the processing path ranges from 1 μm/s to 10 μm/s. Considering the occurrence speed of the localized anodic oxidation reaction, it is ensured that the oxidation reaction of the sample to be processed 12 on the moving path occurs completely, and at the same time, a certain etching rate can be maintained. Since the atomic force microscope itself can be used to characterize the surface morphology of the sample, after the processing is completed, the voltage can be turned off immediately to measure the morphology, and the processing results can be detected, thereby realizing quasi-real-time monitoring. In the contact mode of the atomic force microscope, the pressure applied by the tip of the atomic force microscope probe ranges from 500 nN to 2000 nN. According to the material properties of the conductor probe 13 , the sample to be processed 12 and the substrate 11 thereunder, a suitable pressure range in the contact mode of the atomic force microscope is selected.

As an example, during processing, in order to form the water bridge 15 between the conductor probe 13 and the surface of the sample 12 to be processed, a high Before applying high-frequency alternating current, it is necessary to adjust the humidity and temperature of the environment where the conductor probe 13 and the sample to be processed 12 are located, so that the strong electric field gradient between the conductor probe 13 and the surface of the sample to be processed 12 can absorb air water molecules in and form an adsorbed water layer. As mentioned above, by forming the water bridge 15, the anodization reaction is controlled to occur within the range covered by the water bridge 15, and the processing process is completed. After regulation, the relative humidity of the environment where the conductor probe 13 is located ranges from 50% to 70%, and the temperature range of the environment where the conductor probe 13 is located after regulation is between 20°C and 30°C. By adjusting the relative humidity and temperature of the environment, the conductor probe 13 and the surface of the sample to be processed 12 can easily adsorb water molecules in the air under a strong electric field and form an adsorbed water layer.

As an example, after the processing is completed, the sample to be processed 12 may also be placed in an environment with a preset relative humidity or a preset temperature to remove the adsorbed water layer formed on the surface of the sample to be processed 12 . Since an adsorbed water layer is formed between the conductor probe 13 and the surface of the sample to be processed 12 during the processing, after the processing is completed, there may still be an adsorbed water layer on the surface of the sample to be processed 12 . In order to prevent the residual adsorbed water layer from affecting the sample and subsequent processes, it is necessary to remove the adsorbed water layer in time. The preset relative humidity is less than or equal to 10%, and the preset temperature is greater than or equal to 120°C. The adsorbed water layer on the surface of the sample to be processed 12 can be effectively removed by controlling the temperature and humidity.

Two examples of the local anodizing processing method based on the high frequency alternating current drive of the present invention are provided below to specifically illustrate the advantages and effects of the local anodizing processing method driven by the high frequency alternating current in the present invention.

Example 1

Please refer to FIG. 5 , the local anodization processing method driven by high-frequency alternating current provided by the present invention can be used for etching graphene nanoribbons, and the main steps are as follows:

1) A single-layer graphene sample 21 was prepared on a silica substrate by a mechanical exfoliation method. Preferably, the silicon dioxide substrate has a thickness of 300 nm and is located on a heavily doped conductive silicon substrate;

2) Connect the conductive silicon substrate to one end of the output end of the high-frequency AC power signal generator, and place it on the scanning stage of the atomic force microscope. Connect the other end of the output end of the high-frequency AC power signal generator with the atomic force microscope probe as the conductor probe 13;

3) The atomic force microscope is set to the tapping mode, the surface morphology and the specific position of the single-layer graphene sample 21 are obtained by scanning, and the target area and the etching path 22 that need to be etched are determined;

4) Regulating the relative humidity of the environment to 50% to 70%, and regulating the ambient temperature to 20°C to 30°C, the preferred ambient temperature is 25°C;

5) Move the tip of the atomic force microscope probe to the area to be etched, turn on the signal generator and output 50-200 kHz (the specific frequency depends on the size of the sample, the smaller the size, the higher the frequency), and a sine wave with an amplitude of 10V. The atomic force microscope was switched to contact mode or lift mode, and the tip applied pressure was maintained at about 1500 nN. Under the above humidity and temperature conditions, the tip of the atomic force microscope probe and the single-layer graphene sample will adsorb water molecules due to the strong electric field and form a water bridge 15;

6) Move the tip of the atomic force microscope probe according to the preset etching path 22 to perform etching. The moving speed of the tip of the atomic force microscope probe ranges from 1 μm/s to 10 μm/s. In the area where the tip of the atomic force microscope probe passes, the graphene surface covered by the water bridge 15 undergoes an electrochemical reaction and is oxidized into carbon dioxide or carbon monoxide, thereby being removed by etching;

7) Take out the etched sample and place it in a low humidity environment (relative humidity less than 10%) or heat it to 120°C or more to remove water molecules that may be adsorbed on the surface of the sample during the etching process.

Figure 5 shows the AFM topography of the graphene nanoribbons obtained after etching. The light-colored area is the single-layer graphene 21. During the etching process, the tip of the atomic force microscope probe moves along the etching path 22, and the single-layer graphene on the etching path 22 is moved. Oxidized to carbon dioxide or carbon monoxide and removed. The partial enlarged view 24 in the upper right corner is an enlarged view of the frame selection area 23 . It can be seen from the enlarged image that the line width and spacing of the etched graphene nanoribbons are uniform, and the surface morphology is intact.

Embodiment 2

Please refer to FIG. 6 to FIG. 7 , the local anodization processing method driven by high-frequency alternating current provided by the present invention can also be used for cutting carbon nanotubes, and the main steps are as follows:

1) Single-walled carbon nanotubes 31 are grown on the hexagonal boron nitride film. Preferably, the hexagonal boron nitride film is prepared on a silicon dioxide/silicon substrate by a mechanical lift-off method;

2) Connect the conductive silicon substrate base to one end of the output end of the high-frequency AC power signal generator, and place it on the scanning stage of the atomic force microscope. Connect the other end of the output end of the high-frequency AC power signal generator with the atomic force microscope probe as the conductor probe 13;

3) setting the atomic force microscope to tapping mode, scanning to obtain the surface topography and specific position of the carbon nanotube sample 31, and determining the cutting path 32;

4) Regulating the relative humidity of the environment to 50% to 70%, and regulating the ambient temperature to 20°C to 30°C, the preferred ambient temperature is 25°C;

5) Move the tip of the atomic force microscope probe to the area to be processed, turn on the signal generator and output a 5kHz (the specific frequency depends on the size of the sample, the smaller the size, the higher the frequency), a 10V amplitude sine wave. The atomic force microscope was switched to contact mode or lift mode, and the tip applied pressure was maintained at about 1500 nN. Under the above humidity and temperature conditions, water molecules will be adsorbed between the tip of the atomic force microscope probe and the single-walled carbon nanotube 31 sample due to a strong electric field and a water bridge 15 will be formed;

6) Move the needle tip of the atomic force microscope probe along the cutting path 32, the moving speed of the tip of the atomic force microscope probe is in the range of 1 μm/s to 10 μm/s, and the carbon nanotubes covered by the water bridge 15 are It is oxidized into carbon dioxide or carbon monoxide and removed to complete the cutting of carbon nanotubes;

7) Take out the etched sample and place it in a low humidity environment (relative humidity less than 10%) or heat it to 120°C or more to remove water molecules that may be adsorbed on the surface of the sample during the etching process.

FIG. 6 shows an atomic force microscope topography of the carbon nanotubes 31 before cutting. The arrow in the figure is the cutting path 32 along which the tip of the atomic force microscope probe moves. FIG. 7 shows an atomic force microscope topography of the carbon nanotubes 33 after cutting. It is worth noting that, in order to facilitate the observation of the incision, the carbon nanotubes 33 described in FIG. 7 have been moved at a certain angle by the needle tip of an atomic force microscope. It can be seen from the figure that the carbon nanotube 31 is cut into five sections according to the predetermined cutting path 32 , and the shape of each section of the carbon nanotube is basically intact.

To sum up, the present invention provides a local anodizing processing method driven by high frequency alternating current. The local anodization processing method driven by high-frequency alternating current includes providing a substrate, a sample to be processed and a conductor probe, the sample to be processed is located on the substrate, and the substrate comprises a dielectric layer and a conductor probe. The double-layer structure of the conductive layer, the dielectric layer is located above the conductive layer and is in contact with the sample to be processed, and a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe is applied. The needle moves along a processing path on the surface of the sample to be processed, so that the sample to be processed on the processing path is oxidized. The present invention introduces a local anodizing processing method driven by high-frequency alternating current, which is used for processing low-dimensional nanometer samples on insulating substrates. The traditional direct current anodizing method has been greatly improved.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (8)

1. A high-frequency alternating-current-driven local anodizing method is characterized by comprising the following steps:

providing a substrate, a sample to be processed and a conductor probe, wherein the sample to be processed is positioned on the substrate, the substrate is of a double-layer structure comprising a dielectric layer and a conductive layer, the dielectric layer is positioned above the conductive layer and is in contact with the sample to be processed, a high-frequency alternating voltage is applied between the conductor probe and the conductive layer, and the conductor probe moves on the surface of the sample to be processed along a processing path, so that the sample to be processed on the processing path is oxidized.

2. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the dielectric layer material comprises SiO₂、hBN、GeO₂、Al₂O₃、HfO₂、BaTiO₃PMN-PT, mica, PMMA, PC or PVC.

3. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the conductive layer material comprises Si, Ge, graphite, metal or conductive ionic liquid.

4. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the sample to be processed is a conductive low-dimensional nano material.

5. The high frequency alternating current driven local anodizing process of claim 4, wherein: the conductive low-dimensional nanomaterial at least comprises graphene or carbon nanotubes, and the graphene or carbon nanotubes are oxidized into carbon monoxide or carbon dioxide in the processing process and are etched and removed.

6. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: and the conductor probe is an atomic force microscope probe or a scanning tunnel microscope probe, and the sample to be processed is processed in the atomic force microscope or the scanning tunnel microscope.

7. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: the frequency of the high-frequency alternating current is more than 1000 Hz.

8. The high-frequency alternating-current driven local anodizing method according to claim 1, wherein: in the whole processing process, the sample to be processed is connected with the conductor needle point through a nano-sized water bridge.

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