[go: up one dir, main page]

Yan et al., 2011 - Google Patents

Local voltage drop in a single functionalized graphene sheet characterized by Kelvin probe force microscopy

Yan et al., 2011

View PDF
Document ID
6787427072034504942
Author
Yan L
Punckt C
Aksay I
Mertin W
Bacher G
Publication year
Publication venue
Nano letters

External Links

Snippet

We studied the local voltage drop in functionalized graphene sheets of subμm size under external bias conditions by Kelvin probe force microscopy. Using this noninvasive experimental approach, we measured ohmic current–voltage characteristics and an intrinsic …
Continue reading at www.princeton.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438—Graphene
    • C01B31/0446—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes

Similar Documents

Publication Publication Date Title
Yan et al. Local voltage drop in a single functionalized graphene sheet characterized by Kelvin probe force microscopy
Sun et al. Graphene chemistry: synthesis and manipulation
Li et al. Scalable production of few-layer boron sheets by liquid-phase exfoliation and their superior supercapacitive performance
Ambrosi et al. Exfoliation of layered topological insulators Bi2Se3 and Bi2Te3 via electrochemistry
Liu et al. Bottom-up, on-surface-synthesized armchair graphene nanoribbons for ultra-high-power micro-supercapacitors
Chen et al. Synthesis of graphene nanoribbons by ambient-pressure chemical vapor deposition and device integration
Yasaei et al. Stable and selective humidity sensing using stacked black phosphorus flakes
Sinitskii et al. Graphene nanoribbon devices produced by oxidative unzipping of carbon nanotubes
Datta et al. Surface potentials and layer charge distributions in few-layer graphene films
Xu et al. Scanning tunneling microscopy characterization of the electrical properties of wrinkles in exfoliated graphene monolayers
Ni et al. Quasi-periodic nanoripples in graphene grown by chemical vapor deposition and its impact on charge transport
Lu et al. Bandgap, mid-gap states, and gating effects in MoS2
Zheng et al. Direct observation of 2D electrostatics and ohmic contacts in template-grown graphene/WS2 heterostructures
Decker et al. Local electronic properties of graphene on a BN substrate via scanning tunneling microscopy
Wan et al. Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications
Haskins et al. Control of thermal and electronic transport in defect-engineered graphene nanoribbons
Teague et al. Evidence for strain-induced local conductance modulations in single-layer graphene on SiO2
Yoo et al. Large reversible Li storage of graphene nanosheet families for use in rechargeable lithium ion batteries
Giubileo et al. Effect of electron irradiation on the transport and field emission properties of few-layer MoS2 field-effect transistors
Zhang et al. Review of chemical vapor deposition of graphene and related applications
Nirmalraj et al. Nanoscale mapping of electrical resistivity and connectivity in graphene strips and networks
Pan et al. Wrinkle engineering: a new approach to massive graphene nanoribbon arrays
Abbas et al. Patterning, characterization, and chemical sensing applications of graphene nanoribbon arrays down to 5 nm using helium ion beam lithography
Huang et al. Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials
Withers et al. Nanopatterning of fluorinated graphene by electron beam irradiation