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CN113267118A - Semiconductor conductive film thickness online test structure and test method thereof - Google Patents

Semiconductor conductive film thickness online test structure and test method thereof Download PDF

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CN113267118A
CN113267118A CN202110695599.5A CN202110695599A CN113267118A CN 113267118 A CN113267118 A CN 113267118A CN 202110695599 A CN202110695599 A CN 202110695599A CN 113267118 A CN113267118 A CN 113267118A
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semiconductor
resistance
strip
resistor
thin layer
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CN113267118B (en
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周再发
宋玉洁
黄庆安
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention discloses an on-line testing structure for the thickness of a semiconductor conductive film, which comprises a four-probe resistance testing bridge structure and a continuous ladder structure, wherein the structure utilizes a plurality of steps to average random errors in the manufacturing process of the steps, and utilizes the plurality of steps to increase the numerical value of resistance change, thereby facilitating measurement. The invention also discloses an on-line testing method for the thickness of the semiconductor conductive film, which is simple, has low requirement on testing equipment, stable testing process and testing parameter values, synchronous processing process and micro-electromechanical device, has no special processing requirement, completely meets the requirement of on-line testing, and is only limited by a simple mathematical formula.

Description

Semiconductor conductive film thickness online test structure and test method thereof
Technical Field
The invention relates to the field of semiconductor conductive film online measurement, in particular to a semiconductor conductive film thickness online test structure and a test method thereof.
Background
The film thickness of a microelectromechanical thin film device is an important parameter that affects the performance of the device. By measuring the thickness of the film on line, the size of the device can be obtained, and the precision of the device can be controlled. Semiconductors are important materials used in surface micromachining processes, and the basic processes of machining are as follows: a layer of material, referred to as a sacrificial layer, is first deposited on the silicon wafer. Then, the pattern layer is defined by photoetching, and a structural layer film is manufactured on the sacrificial layer by using a chemical vapor deposition method and the like. And finally, etching to remove the sacrificial layer to separate the movable part of the miniature part from the sacrificial layer to form the semiconductor film structure. The material of the sacrificial layer is usually a dielectric material, and the structural layer is a semiconductor material. Manufacturers of micro-electro-mechanical products want to be able to monitor the thickness of the semiconductor conductive film on line and reflect the process error in the manufacturing process in real time. Therefore, on-line testing of microelectromechanical products without leaving the processing environment and with convenient equipment becomes an essential means of controlling the process. The on-line test structure usually adopts the methods of electrical excitation and electrical measurement, and obtains the geometric parameters of the material through the electrical quantity value and a targeted calculation method.
Disclosure of Invention
In view of the above, the present invention provides an on-line testing structure and a testing method thereof for measuring the thickness of a semiconductor conductive film on line by using convenient equipment without leaving the processing environment.
In order to achieve the purpose, the invention is realized by the following technical scheme:
the thickness online test structure for the semiconductor conductive thin film comprises a circular semiconductor thin layer and first to fourth contact electrodes, wherein the four contact electrodes are uniformly arranged on the peripheral side of the circular semiconductor thin layer and are electrically connected with the circular semiconductor thin layer, and the opening angle formed by the four contact electrodes and the circular semiconductor thin layer is alpha; further comprising: the four-probe resistance testing bridge structure is arranged on the surface of the dielectric layer, a part of the surface of the dielectric layer is etched into a plurality of mutually parallel and same grooves, steps are formed among the grooves and have the same length, the grooves and the corresponding steps form a continuous stepped structure together, and the two side walls of the grooves and the surface of the dielectric layer have the same included angle; the four-probe resistance test bridge structure includes a first four-probe semiconductor resistance bridge and a second four-probe semiconductor resistance bridge, wherein,
the first four-probe semiconductor resistance bridge comprises a first semiconductor resistance strip and four metal electrodes, wherein one metal electrode is electrically connected to each side of the two ends of the first semiconductor resistance strip, the middle part of the first semiconductor resistance strip climbs over the continuous ladder structure, one end of the first semiconductor resistance strip is connected with the round semiconductor thin layer to form an integral structure, and the other end of the first semiconductor resistance strip is connected with the second four-probe semiconductor resistance bridge;
the second four-probe semiconductor resistance bridge comprises a second semiconductor resistance strip and two metal electrodes, wherein the second semiconductor resistance strip is arranged at the other end of the first semiconductor resistance strip and is connected with the first semiconductor resistance strip, the second semiconductor resistance strip and the first semiconductor resistance strip share the two metal electrodes, the second semiconductor resistance strip is arranged on the surface of a flat dielectric layer, and the second semiconductor resistance strip and the first semiconductor resistance strip have the same width.
Furthermore, the metal electrode is arranged on an anchor area, and the anchor area is formed by etching the surface of the dielectric layer.
Further, the dielectric layer is arranged on the insulating substrate.
An on-line testing method for the thickness of a semiconductor conductive film comprises the following steps:
step S1, obtaining the square resistance R of the circular semiconductor thin layer by mapping the circular semiconductor thin layer to a simple structure and combining the definition of the square resistancesq；
Step S2, applying constant current to the two metal electrodes on the same side of the first semiconductor resistor strip, and measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is the resistor R1；
Step S3, applying constant current to the two metal electrodes on the same side of the second semiconductor resistor strip, and measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is the resistor RA；
Step S4, according to the resistance R1Square resistance RsqAnd the second semiconductor resistor stripAccording to the thickness of the first semiconductor resistor strip and the geometrical relation of the step, and according to the resistance R1Square resistance RsqEstablishing a formula set (1) according to the relation of the geometric dimension of the first semiconductor resistor strip, wherein the formula is as follows:
Figure BDA0003128202650000021
in the formula group (1), W represents the width of the second semiconductor resistor strip, RsqDenotes the square resistance, R1Representing the resistance, L, of the first semiconducting resistor strip1Representing the effective length, R, of the second semiconducting resistive trackARepresenting the resistance, S, of the second semiconductor resistor strip1Indicates the length of the top surface of the groove, S2Representing half the length of the step, S3Denotes the length of the side wall of the groove, beta denotes the angle between the side wall and the bottom of the groove, t1The thickness of the first semiconductor resistor strip is expressed, x is an introduced intermediate variable and has no specific physical significance only for the purpose of making formula (1) simple and clear, gamma is expressed as a correction factor of corner resistance, and n is expressed as the number of steps;
step S5, the sheet resistance R obtained in step S1sqResistance R obtained in step S21And the resistance R obtained in step S3ASubstituting into said set of equations (1), obtained by measuring: effective length L of second semiconductor resistor strip1Length S of the top surface of the groove1Half of step length S2Length S of side wall of groove3And substituting the number n of the steps, the correction factor gamma of the corner resistance and the included angle beta of the side wall of the groove and the bottom surface of the groove into the formula group (1) to obtain the thickness of the semiconductor conductive film.
Further, the step S1 specifically includes:
step S101, applying a constant current between the first contact electrode and the fourth contact electrode, and measuring a voltage between the first contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Ra；
Step S102, applying a constant current between the first contact electrode and the fourth contact electrode, and measuring a voltage between the second contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Rb；
Step S103, establishing a formula set (2) according to the mapping from the circular semiconductor thin layer to the simple structure and the definition of the square resistance:
Figure BDA0003128202650000031
in formula group (2), P, Q, S and T both represent intermediate quantities, alpha is an unknown number, and represents the opening angle formed by four contact electrodes and the circular semiconductor thin layer, i is an imaginary unit, and K [ ·]Representing an elliptic integral function of the first kind, RsqDenotes the square resistance, g, of a circular semiconductor thin layera(. alpha.) and gb(α) represents a function related only to the opening angle α;
step S103, the resistor R obtained in step S101aAnd the resistance R obtained in step S102bSubstituting the four contact electrodes into a formula group (2) to obtain the opening angle alpha formed by the four contact electrodes and the circular semiconductor thin layer;
step S104, substituting the opening angle alpha obtained in step S103 into formula (3) to obtain the square resistance RsqThe expression of formula (3) is:
Figure BDA0003128202650000041
in the formula (3), gaAnd (alpha) represents a function related to the opening angle alpha only, i is an imaginary unit, and P, Q, S and T both represent intermediate quantities.
Further, in step S5, the semiconductor conductive film has a thickness expressed by:
Figure BDA0003128202650000042
the invention has the beneficial effects that:
1. the testing method provided by the invention is simple, the requirement on testing equipment is low, and the testing process and the testing parameter value are stable. The processing process is synchronous with the micro-electro-mechanical device, no special processing requirement exists, and the requirements of online testing are completely met. The calculation method is limited to simple mathematical formulas.
2. The semiconductor climbs over a plurality of steps of the sacrificial layer, and random errors in the step manufacturing process are averaged by the steps; the resistance change value is increased by using a plurality of steps, so that the measurement is convenient. The measurement adopts a four-probe method to test two semiconductor resistors. And finally, calculating to obtain the thickness of the semiconductor by combining the square resistance obtained by the circular thin-layer structure.
Drawings
Fig. 1 is a schematic structural view of a circular semiconductor thin layer.
FIG. 2 is a schematic structural diagram of a four-probe resistance test bridge structure.
Fig. 3 is an enlarged cross-sectional view of a single step structure.
In the drawings:
101-first contact electrode, 102-second contact electrode, 103-third contact electrode, 104-fourth contact electrode, 105-circular semiconductor thin layer, 106-second semiconductor resistor strip, 107-groove, 108-first semiconductor resistor strip, 109, 110, 111, 112, 113 and 114 all represent anchor region, 115-metal electrode, 116-semiconductor layer, 117-dielectric layer, 118-insulating substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1, 2 and 3, the present embodiment provides an online thickness test structure of a semiconductor conductive film, including a circular semiconductor thin layer 105, a first contact electrode 101, a second contact electrode 102, a third contact electrode 103 and a fourth contact electrode 104, the four contact electrodes being uniformly disposed on the peripheral side of the circular semiconductor thin layer 105 and electrically connected to the circular semiconductor thin layer 105, and the opening angle formed by the four contact electrodes and the circular semiconductor thin layer 105 being α; specifically, the circular semiconductor thin layer 105 is used for measuring the sheet resistance, and the first to fourth contact electrodes are used for applying current and measuring voltage.
The semiconductor conductive film thickness online test structure further comprises: the four-probe resistance testing bridge structure is arranged on the surface of a dielectric layer 117, the dielectric layer 117 is arranged on an insulating substrate 118, a part of the surface of the dielectric layer 117 is etched into n mutually parallel and same grooves 107, specifically, referring to fig. 3, steps are formed between the grooves 107 and have the same length, the two side walls of the groove 107 and the surface of the dielectric layer 117 have the same included angle beta, and the n grooves 107 and the dependent steps form the continuous stepped structure together.
The four-probe resistance test bridge structure comprises a first four-probe semiconductor resistance bridge and a second four-probe semiconductor resistance bridge.
Specifically, the first and second four-probe semiconductor resistor bridges each include a semiconductor resistor strip and four metal electrodes 115 for performing a four-probe method measurement. And the first and second four-probe semiconductor resistor bridges share two metal electrodes 115, and the semiconductor resistor bars are parallel to the x-axis direction in the cartesian coordinate system. More specifically, the first four-probe semiconductor resistor bridge includes a first semiconductor resistor strip 108 and four metal electrodes 115, wherein two sides of the leftmost end of the first semiconductor resistor strip 108 are electrically connected to one metal electrode 115, two sides of the rightmost end of the first semiconductor resistor strip 108 are electrically connected to one metal electrode 115, the total number of the four metal electrodes 115 is four, and the middle portion of the first semiconductor resistor strip 108 climbs over the continuous ladder structure.
The second four-probe semiconductor resistor bridge includes a second semiconductor resistor strip 106 and two metal electrodes 115, wherein the second semiconductor resistor strip 106 is disposed at the rightmost end of the first semiconductor resistor strip 108, is connected with the first semiconductor resistor strip 108, and is disposed on the surface of the flat dielectric layer 117. Two sides of the rightmost end of the second semiconductor resistor strip 106 are provided with one metal electrode 115, and the leftmost end of the second semiconductor resistor strip 106 uses two metal electrodes 115 at the rightmost end of the first semiconductor resistor strip 108. More specifically, the length of the first semiconductor resistor strip 108 and the second semiconductor resistor strip 106 along the y-axis direction is W, the length of the groove 107 along the y-axis direction is greater than 3 times of the W value of the semiconductor resistor strips, and the length along the x-axis direction is S1The effective length of the second semiconductor resistor 106 is L1。
Specifically, the metal electrodes 115 in this embodiment are disposed on the corresponding six anchor regions, and the six anchor regions are formed by etching the surface of the dielectric layer 117, and in this embodiment, the 3 anchor regions on the lower side of the four-probe resistance testing bridge structure sequentially include, from left to right: anchor area 109, anchor area 110, anchor area 111; the 3 anchor regions of four probe resistance test bridge structure downside are from right to left in proper order: anchor region 112, anchor region 113, anchor region 114.
Referring to FIG. 3, which is an enlarged A-A cross-sectional view of a single trench structure, FIG. 3 shows a dielectric substrate 118 on which a dielectric layer 117 is deposited to a thickness t2A groove 107 is etched with a design dimension S along the x-axis1Due to process limitations, the sidewalls of the recess 107 are sloped at an angle, denoted as β. Depositing a layer with a thickness t1The semiconductor layer 116 climbs over the step at the groove 107, and a symmetrical structure having a vertical bisector of the groove 107 as a symmetry axis is formed. The symmetrical structure comprises the following parts: the surfaces of the dielectric layers 117 not etched on both sides of the groove 107 respectively have a section with a length of S2The semiconductor resistor strip of (1); the substrate surface at the bottom of the groove 107 has a section with a length S1-2x semiconducting resistive strips; the side walls of the two grooves 107 are respectively formed by a section with the length S3Is covered with the semiconductor resistor strip and passes through the two partsThe four corner semiconductor resistors are connected. The continuous ladder structure of fig. 2 is obtained by connecting n ladder structures of fig. 3 in series.
Example 2
Referring to fig. 1 and fig. 2, the present embodiment provides an online testing method for a thickness of a semiconductor conductive film, where the method of the present embodiment is implemented based on the testing structure in embodiment 1, and specifically includes the following steps:
step S1 is to determine the sheet resistance R of the circular semiconductor thin layer 105 by mapping the circular semiconductor thin layer 105 to a simple structure and combining the definition of the sheet resistancesq；
Step S1, specifically, measuring by using a four-probe method, specifically including:
step S101, applying a constant current between the first contact electrode 101 and the fourth contact electrode 104, and measuring a voltage between the first contact electrode 101 and the fourth contact electrode 104, a ratio of the voltage to the current being a resistance Ra；
Step S102, applying a constant current between the first contact electrode 101 and the fourth contact electrode 104, and measuring a voltage between the second contact electrode 102 and the fourth contact electrode 104, wherein a ratio of the voltage to the current is a resistance Rb；
Step S103, based on the mapping of the circular semiconductor thin layer 105 to a simple structure and the definition of the sheet resistance, establishes the following formula:
Figure BDA0003128202650000061
in the formula group, P, Q, S and T both represent intermediate quantities, α is an unknown number, and represents the opening angle formed by four contact electrodes and the circular semiconductor thin layer 105, i is an imaginary unit, and K [ · is]Representing an elliptic integral function of the first kind, RsqDenotes the square resistance, g, of the circular semiconductor thin layer 105a(. alpha.) and gb(α) represents a function related only to the opening angle α;
step S103, the resistor R obtained in step S101aAnd step S102 of obtainingResistance R ofbSubstituting the formula group to obtain the opening angle alpha formed by the four contact electrodes 101-104 and the circular semiconductor thin layer 105;
step S104, substituting the opening angle alpha obtained in step S103 into the following formula to obtain the square resistance RsqThe expression is as follows:
Figure BDA0003128202650000071
in the formula, gaAnd (alpha) represents a function related to the opening angle alpha only, i is an imaginary unit, and P, Q, S and T both represent intermediate quantities.
Step S2, applying a constant current between the anchor region 109 and the anchor region 110 of the first semiconductor resistor 108, measuring the voltage between the anchor region 113 and the anchor region 114 on the other side, and the ratio of the voltage to the current is the resistor R1；
Step S3, applying a constant current between the anchor region 112 and the anchor region 113 of the second semiconductor resistor strip 106, and measuring the voltage between the anchor region 110 and the anchor region 111, wherein the ratio of the voltage to the current is the resistor RA；
Step S4, according to the resistance R1Square resistance RsqThe geometric relationship with the second semiconductor resistor strip 106, the geometric relationship between the thickness of the first semiconductor resistor strip 108 and the step, and the relationship between the resistance R1Square resistance RsqIn relation to the geometric dimensions of the first semiconductor resistor strip 108, a set of equations is established, the expression being:
Figure BDA0003128202650000072
in the formula set, W represents the width of the second semiconductor resistor strip 106, RsqDenotes the square resistance, R1Representing the resistance, L, of the first semiconducting resistor strip 1081Represents the effective length, R, of the second semiconductor resistor strip 106ARepresenting the resistance, S, of the second semiconductor resistor strip 1061Indicates the length, S, of the top surface of the groove 1072Representing half the length of the step, S3Denotes the length of the side wall of the groove 107, beta denotes the angle between the side wall of the groove 107 and the bottom of the groove 107, t1The thickness of the first semiconductor resistor strip 108 is shown, x is an intermediate variable introduced, and has no specific physical significance only for the sake of making formula (1) simple and clear, γ is a correction factor of the corner resistor, and n is the number of steps;
step S5, the sheet resistance R obtained in step S1sqResistance R obtained in step S21And the resistance R obtained in step S3ASubstituting into formula group (1), obtained by measuring: effective length L of second semiconductor resistor strip 1061Length S of the top surface of the groove 1071Half of step length S2The length S of the side wall of the groove 1073The number n of steps, the correction factor γ of the corner resistance and the included angle β between the sidewall of the groove 107 and the bottom of the groove 107 are substituted into the formula set established in step S4 to obtain the thickness of the semiconductor conductive film, where the expression is:
Figure BDA0003128202650000081
in summary, the testing method of the invention is simple, adopts a simple direct current source as an excitation source, and adopts common voltage testing equipment to complete all excitation and testing processes. The test structure is completed using a basic micro-electromechanical machining process.
Referring to fig. 3, the fabrication of the test structure is described below in terms of a typical two-layer semiconductor micro-electromechanical surface fabrication process.
An N-type semiconductor silicon wafer is selected, a silicon dioxide layer with a thickness of 100 nanometers is thermally grown, and a silicon nitride layer with a thickness of 500 nanometers is deposited by a low-pressure chemical vapor deposition process to form the insulating substrate 118. A layer of 300-nanometer semiconductor is deposited by adopting a low-pressure chemical vapor deposition process, N-type heavy doping is carried out to enable the layer of semiconductor to become a conductor, and a part of the anchor region (109-114) is formed by etching through a photoetching process. A dielectric layer 117 with a thickness of 2000 nm is deposited by a low pressure chemical vapor deposition process, and the anchor region pattern (109-114) and the recess 107 are formed by a photolithography process.
A semiconductor layer 116 with the thickness of 1500 nanometers is deposited by using a low-pressure chemical vapor deposition process, N-type heavy doping is carried out on the semiconductor layer 116, a semiconductor test structure pattern and an anchor region (109-.
The invention is not described in detail, but is well known to those skilled in the art.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (6)

1. The thickness online test structure for the semiconductor conductive thin film comprises a circular semiconductor thin layer and first to fourth contact electrodes, wherein the four contact electrodes are uniformly arranged on the peripheral side of the circular semiconductor thin layer and are electrically connected with the circular semiconductor thin layer, and the opening angle formed by the four contact electrodes and the circular semiconductor thin layer is alpha; it is characterized by also comprising: the four-probe resistance testing bridge structure is arranged on the surface of the dielectric layer, a part of the surface of the dielectric layer is etched into a plurality of mutually parallel and same grooves, steps are formed among the grooves and have the same length, the grooves and the corresponding steps form a continuous stepped structure together, and the two side walls of the grooves and the surface of the dielectric layer have the same included angle; the four-probe resistance test bridge structure includes a first four-probe semiconductor resistance bridge and a second four-probe semiconductor resistance bridge, wherein,
the first four-probe semiconductor resistance bridge comprises a first semiconductor resistance strip and four metal electrodes, wherein one metal electrode is electrically connected to each side of the two ends of the first semiconductor resistance strip, the middle part of the first semiconductor resistance strip climbs over the continuous ladder structure, one end of the first semiconductor resistance strip is connected with the round semiconductor thin layer to form an integral structure, and the other end of the first semiconductor resistance strip is connected with the second four-probe semiconductor resistance bridge;
the second four-probe semiconductor resistance bridge comprises a second semiconductor resistance strip and two metal electrodes, wherein the second semiconductor resistance strip is arranged at the other end of the first semiconductor resistance strip and is connected with the first semiconductor resistance strip, the second semiconductor resistance strip and the first semiconductor resistance strip share the two metal electrodes, the second semiconductor resistance strip is arranged on the surface of a flat dielectric layer, and the second semiconductor resistance strip and the first semiconductor resistance strip have the same width.
2. The structure of claim 1, wherein the metal electrode is disposed on an anchor region formed by etching a surface of the dielectric layer.
3. The structure of claim 2, wherein the dielectric layer is disposed on the insulating substrate.
4. A method for testing a semiconductor conductive film thickness on-line test structure according to any one of claims 1-3, comprising the steps of:
step S1, obtaining the square resistance R of the circular semiconductor thin layer by mapping the circular semiconductor thin layer to a simple structure and combining the definition of the square resistancesq；
Step S2, applying constant current to the two metal electrodes on the same side of the first semiconductor resistor strip, and measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is the resistor R1；
Step S3. Applying constant current to two metal electrodes on the same side of the second semiconductor resistor strip, measuring voltage between the two metal electrodes on the other side, and determining the ratio of the voltage to the current as the resistor RA；
Step S4, according to the resistance R1Square resistance RsqThe geometrical relation with the second semiconductor resistor strip, the geometrical relation between the thickness of the first semiconductor resistor strip and the step, and the relation between the resistance R1Square resistance RsqEstablishing a formula set (1) according to the relation of the geometric dimension of the first semiconductor resistor strip, wherein the formula is as follows:
Figure FDA0003128202640000021
in the formula group (1), W represents the width of the second semiconductor resistor strip, RsqDenotes the square resistance, R1Representing the resistance, L, of the first semiconducting resistor strip1Representing the effective length, R, of the second semiconducting resistive trackARepresenting the resistance, S, of the second semiconductor resistor strip1Indicates the length of the top surface of the groove, S2Representing half the length of the step, S3Denotes the length of the side wall of the groove, beta denotes the angle between the side wall and the bottom of the groove, t1The thickness of the first semiconductor resistor strip is expressed, an intermediate variable is introduced, no specific physical significance is realized, gamma is expressed as a correction factor of corner resistance, and n is expressed as the number of steps;
step S5, the sheet resistance R obtained in step S1sqResistance R obtained in step S21And the resistance R obtained in step S3ASubstituting into said set of equations (1), obtained by measuring: effective length L of second semiconductor resistor strip1Length S of the top surface of the groove1Half of step length S2Length S of side wall of groove3And substituting the number n of the steps, the correction factor gamma of the corner resistance and the included angle beta of the side wall of the groove and the bottom surface of the groove into the formula group (1) to obtain the thickness of the semiconductor conductive film.
5. The method as claimed in claim 4, wherein the step S1 specifically comprises:
step S101, applying a constant current between the first contact electrode and the fourth contact electrode, and measuring a voltage between the first contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Ra；
Step S102, applying a constant current between the first contact electrode and the fourth contact electrode, and measuring a voltage between the second contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Rb；
Step S103, establishing a formula set (2) according to the mapping from the circular semiconductor thin layer to the simple structure and the definition of the square resistance:
Figure FDA0003128202640000031
in formula group (2), P, Q, S and T both represent intermediate quantities, alpha is an unknown number, and represents the opening angle formed by four contact electrodes and the circular semiconductor thin layer, i is an imaginary unit, and K [ ·]Representing an elliptic integral function of the first kind, RsqDenotes the square resistance, g, of a circular semiconductor thin layera(. alpha.) and gb(α) represents a function related only to the opening angle α;
step S103, the resistor R obtained in step S101aAnd the resistance R obtained in step S102bSubstituting the four contact electrodes into a formula group (2) to obtain the opening angle alpha formed by the four contact electrodes and the circular semiconductor thin layer;
step S104, substituting the opening angle alpha obtained in step S103 into formula (3) to obtain the square resistance RsqThe expression of formula (3) is:
Figure FDA0003128202640000032
in the formula (3), gaAnd (alpha) represents a function related to the opening angle alpha only, i is an imaginary unit, and P, Q, S and T both represent intermediate quantities.
6. The method as claimed in claim 5, wherein in step S5, the semiconductor conductive film thickness is expressed as:
Figure FDA0003128202640000033
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WO2022268039A1 (en) * 2021-06-23 2022-12-29 东南大学 Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof

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