CN102539930A - Method for testing photoelectric performance of semiconductor thin film - Google Patents
Method for testing photoelectric performance of semiconductor thin film Download PDFInfo
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- CN102539930A CN102539930A CN2012100163584A CN201210016358A CN102539930A CN 102539930 A CN102539930 A CN 102539930A CN 2012100163584 A CN2012100163584 A CN 2012100163584A CN 201210016358 A CN201210016358 A CN 201210016358A CN 102539930 A CN102539930 A CN 102539930A
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Abstract
The invention relates to a method for testing the photoelectric performance of a semiconductor thin film. The method comprises the following steps of: forming two elongated parallel coplanar electrodes by coating conductive silver paste on the surface of a semiconductor thin film (1); applying a direct current voltage between the two electrodes by a digital universal meter (3); and reading out the current by the digital universal meter (3) and calculating the conductivity of the thin film. The test method can effectively replace the conventional aluminum or silver electrode thermal reaction evaporation or magnetron sputtering method, so that the equipment cost and the electrode preparation time are reduced, and the photoelectric performance of the material can be reflected accurately.
Description
Technical field
The present invention relates to the method for testing of the used semiconductive thin film photoelectric properties of a kind of thin-film solar cells, like CIGS thin-film, Cadimium telluride thin film, amorphous silicon membrane, microcrystalline silicon film etc.
Background technology
About 500 ~ 3000 nanometers of the light absorbing zone thickness of thin-film solar cells; Like CIGS thin-film, Cadimium telluride thin film, amorphous silicon membrane, microcrystalline silicon solar cell etc.; The quality of its photoelectric properties is related to the photoelectric properties of thin-film solar cells, like voltage and current of battery etc.For the intrinsic semiconductor film of thin film solar device quality level, promptly undoped film, its light sensitive characteristic, conductivity when rayed and no rayed are promptly arranged
Ratio, should be the bigger the better, be example with the amorphous silicon thin-film solar cell, its photosensitivity is about 10
5~ 10
6, photoconductivity when normal light shines
Be 10
-5~ 10
-6S/cm, dark conductivity during unglazed the photograph
Be 10
-12~ 10
-11S/cm.Generally; It is used that aluminium or the silver electrode that the conductivity test of semiconductive thin film need prepare the pair of parallel coplane at film surface applies generating positive and negative voltage during as test; Conventional technology is thermal response evaporation or magnetron sputtering; This all need carry out under high vacuum condition, and required time is longer, and can not eliminate the dependence of vacuum pump.
Summary of the invention
The objective of the invention is to propose a kind of method of testing of simple and effective semiconductor film conductivity.
To achieve these goals, the present invention has adopted following technical scheme:
A kind of method of testing of semiconductive thin film photoelectric properties is characterized in that may further comprise the steps:
A, adopt conductive silver paste, coat two strip electrodes that keep at a certain distance away at the film surface of semiconductive thin film, through normal temperature air dry and the specimen of solidifying back formation semiconductive thin film;
B, specimen is positioned in the vacuum cavity of sealing, two electrodes of specimen connect digital multimeter through lead respectively;
C, vacuum cavity is covered lucifuge, two electrodes are applied certain DC voltage, the dark current I that the reading number multimeter shows through digital multimeter
d, through formula
, calculate the dark conductivity of semiconductive thin film
,
In the formula
;
is the conductivity of film; The current value of I for reading by digital multimeter; A is the spacing of electrode; V is two interelectrode DC voltages; B is an electrode length, and d is the thickness of semiconductive thin film;
D, remove vacuum cavity and cover; Use the light source irradiation specimen; By digital multimeter two electrodes are applied certain DC voltage; The photoelectric current Il that the reading number universal meter shows; By formula
; Calculate the photoconductivity
of semiconductive thin film illumination condition
e, optical conductivity
and the dark conductivity
is the ratio of the photosensitive properties of the film.
On the basis of technique scheme, following further technical scheme can be arranged:
Said electrode 1 ~ 2cm, wide 0.3 ~ 0.5cm; Two electrode separations are 0.8 ~ 1mm, thickness of electrode 100 ~ 300
m;
The DC voltage that among step c, the d two electrodes is applied is identical, and said DC voltage is 80V-100V; Said light source is an xenon lamp, and intensity of illumination is 800 W/m
2-1000W/m
2
Technical scheme of the present invention is promptly through (conductive silver paste is a known products, is widely used in the thick film circuit at semiconductive thin film surfaces coated system conductive silver paste; Can be through directly smearing or the method for serigraphy; Conductive silver paste is coated with built in semiconductive thin film surface), and dry solidification at normal temperatures, two strip parallel co-planar electrodes formed; And then through between two electrodes, applying a DC voltage, by the digital multimeter read current and calculate the conductivity of film.
Conductivity
computing formula is following:
Wherein
is the conductivity of film; The current value of I for reading by digital multimeter; A is the spacing of two coplane ag paste electrodes being smeared, is 0.8 ~ 1mm; The DC voltage of V between two strip electrodes, applying got 80 ~ 100V usually; B is the ag paste electrode length of smearing, and is 1 ~ 2cm; D is the thickness of semiconductive thin film, can be in advance by other device measuring gained, like step appearance, oval spectrometer, transmitted spectrum etc. partially.
Method of testing provided by the invention can effectively substitute the traditional thermal response evaporation or the method for magnetron sputtering aluminium electrode or silver electrode, has practiced thrift equipment cost and electrode preparation time, also can reflect the photoelectric properties of material simultaneously exactly.
Description of drawings:
Fig. 1 is a method of testing schematic diagram of the present invention;
The structural representation of Fig. 2 semiconductive thin film material.
Embodiment
A kind of method of testing of semiconductor film material photoelectric properties; As shown in Figure 1; With evaporation of vacuum thermal response or the magnetron sputtering technique of smearing conductive silver paste and the method for dry solidification replaces routine under normal temperature; Prepare two strip parallel co-planar electrodes, be used for the measurement of semiconductor film conductivity.
(1) getting sample 1 size of being tested is 1
2cm
2, as shown in Figure 2.Sample 1 is made up of substrate 7 and layer of semiconductor film 8, about 500 nanometers of semiconductor film thickness, and substrate 7 is dull and stereotyped soda-lime glass, thick 2 ~ 3 mm.On the semiconductive thin film surface along the glass short side direction; It is the 1cm minor face; Smear the parallel co-planar electrode 9,10 that conductive silver paste forms spacing 1mm, is about 1cm, wide about 0.3 ~ 0.5cm, about 100 ~ 300
of thickness of the silver slurry that is coated withm.Then sample 1 is solidified through normal temperature air dry in 10 ~ 20 minutes in atmospheric environment.
(2) sample 1 is put into a transparent cavity 2 of small size vacuum, two electrodes and Keithley 2400 digital multimeter 3 of sample are joined, to apply DC voltage, extract a low vacuum with vacuum pump 4 again, vacuum tightness is 1 ~ 2
10
-3Pa.
(3) at first block the cavity glass window with shadow shield 5; Make the transparent cavity airtight of vacuum be in unglazed illuminate condition; The DC voltage that between two electrodes, adds a 80 ~ 100V through digital multimeter 3; Read corresponding current value by digital multimeter 3 again; And through formula (1) calculate this moment film conductivity, be dark conductivity
.
(4) shadow shield 5 is removed, and opened xenon source 6, the adjusting intensity of illumination is 1000W/m
2Sample was in the rayed condition was arranged this moment, and then applied the DC voltage (magnitude of voltage with no rayed time identical) of a 80 ~ 100V, read corresponding current value by digital multimeter 3; And through formula (1) calculate this moment film conductivity, be photoconductivity
(5) photoconductivity
and dark conductivity
; Ratio be the light sensitive characteristic of film; In conjunction with light, dark conductivity, the material property that can estimate semiconductive thin film is good and bad.For example, the photosensitivity of intrinsic amorphous silicon film that satisfies the device grade quality of amorphous silicon thin-film solar cell requirement is 10
5~ 10
6, promptly the ratio of light, dark conductivity is 10
5~ 10
6
Claims (4)
1. the method for testing of semiconductive thin film photoelectric properties is characterized in that may further comprise the steps:
A, adopt conductive silver paste, coat two strip electrodes that keep at a certain distance away at the film surface of semiconductive thin film, through normal temperature air dry and the specimen of solidifying back formation semiconductive thin film;
B, specimen is positioned in the vacuum cavity of sealing, two electrodes of specimen connect digital multimeter through lead respectively;
C, vacuum cavity is covered lucifuge, two electrodes are applied certain DC voltage, the dark current I that the reading number multimeter shows through digital multimeter
d, through formula
, calculate the dark conductivity of semiconductive thin film
,
In the formula
;
is the conductivity of film; The current value of I for reading by digital multimeter; A is the spacing of electrode; V is two interelectrode DC voltages; B is an electrode length, and d is the thickness of semiconductive thin film;
D, remove vacuum cavity and cover; Use the light source irradiation specimen; Through digital multimeter two electrodes are applied certain DC voltage; The photocurrent Il that the reading number multimeter shows; Through formula
, calculate the photoconductivity
of semiconductive thin film illumination condition;
e, optical conductivity
and the dark conductivity
is the ratio of the photosensitive film properties.
2. the method for testing of a kind of semiconductor film material photoelectric properties according to claim 1; It is characterized in that: said electrode 1 ~ 2cm, wide 0.3 ~ 0.5cm; Two electrode separations are 0.8 ~ 1mm, thickness of electrode 100 ~ 300
m.
3. the method for testing of a kind of semiconductor film material photoelectric properties according to claim 1 is characterized in that, the DC voltage that among step c, the d two electrodes is applied is identical, and said DC voltage is 80V-100V.
4. according to the method for testing of the described a kind of semiconductor film material photoelectric properties of claim 1, it is characterized in that said light source is an xenon lamp, intensity of illumination is 800 W/m
2-1000W/m
2
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100163584A CN102539930A (en) | 2012-01-19 | 2012-01-19 | Method for testing photoelectric performance of semiconductor thin film |
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914735A (en) * | 2012-09-21 | 2013-02-06 | 蚌埠玻璃工业设计研究院 | Method for testing silicon-based solar battery dark I-V-T characteristics |
| CN104181401A (en) * | 2013-05-24 | 2014-12-03 | 上海太阳能工程技术研究中心有限公司 | Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane |
| CN104237790A (en) * | 2013-06-09 | 2014-12-24 | 国家纳米科学中心 | Device and method for measuring service life of solar cell |
| CN113267118A (en) * | 2021-06-23 | 2021-08-17 | 东南大学 | Semiconductor conductive film thickness online test structure and test method thereof |
| CN118472063A (en) * | 2024-07-10 | 2024-08-09 | 天合光能股份有限公司 | Solar cell and test system and photovoltaic module thereof |
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2012
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| US6582840B2 (en) * | 2001-01-08 | 2003-06-24 | General Motors Corporation | Fuel cell stack coolant conductivity sensor using differential voltage measurements |
| CN2570807Y (en) * | 2002-08-20 | 2003-09-03 | 比亚迪股份有限公司 | Three electrode array system for closed type simulated battery |
| CN1564014A (en) * | 2004-03-26 | 2005-01-12 | 北京科技大学 | Testing method and appliance for horizontal conductivity of fuel cell proton exchange membrane |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102914735A (en) * | 2012-09-21 | 2013-02-06 | 蚌埠玻璃工业设计研究院 | Method for testing silicon-based solar battery dark I-V-T characteristics |
| CN104181401A (en) * | 2013-05-24 | 2014-12-03 | 上海太阳能工程技术研究中心有限公司 | Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane |
| CN104237790A (en) * | 2013-06-09 | 2014-12-24 | 国家纳米科学中心 | Device and method for measuring service life of solar cell |
| CN113267118A (en) * | 2021-06-23 | 2021-08-17 | 东南大学 | Semiconductor conductive film thickness online test structure and test method thereof |
| CN118472063A (en) * | 2024-07-10 | 2024-08-09 | 天合光能股份有限公司 | Solar cell and test system and photovoltaic module thereof |
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Application publication date: 20120704 |