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CN112089862A - Ultraviolet semiconductor parallel UVC LED all-inorganic or semi-inorganic packaging structure - Google Patents

Ultraviolet semiconductor parallel UVC LED all-inorganic or semi-inorganic packaging structure Download PDF

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CN112089862A
CN112089862A CN202011125778.7A CN202011125778A CN112089862A CN 112089862 A CN112089862 A CN 112089862A CN 202011125778 A CN202011125778 A CN 202011125778A CN 112089862 A CN112089862 A CN 112089862A
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周孔礼
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Shanxi Huawei Uv Semiconductor Technology Co ltd
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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/02Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
    • A61L2/08Radiation
    • A61L2/10Ultraviolet radiation
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/26Accessories or devices or components used for biocidal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61LMETHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2202/00Aspects relating to methods or apparatus for disinfecting or sterilising materials or objects
    • A61L2202/10Apparatus features
    • A61L2202/11Apparatus for generating biocidal substances, e.g. vaporisers, UV lamps

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Abstract

本发明提供了一种紫外半导体并联的UVC LED全无机或半无机封装结构,包括基板、设置于所述基板上的至少两个UVC芯片,所述基板包括设置有UVC芯片的上表面和与所述上表面相对的下表面,所述上表面设置有与所述UVC芯片对应的焊盘对,每个所述UVC芯片设置于一对所述焊盘对之间并与其电性连接,所述UVC芯片之间相互并联。本发明提供的紫外半导体并联的UVC LED全无机或半无机封装结构提高了UVC LED的光功率,增大杀菌消毒功能;UVC芯片之间互不干扰,提高UVC LED的工作寿命。

Figure 202011125778

The invention provides a UVC LED all-inorganic or semi-inorganic encapsulation structure in parallel with ultraviolet semiconductors, comprising a substrate, at least two UVC chips arranged on the substrate, the substrate comprising an upper surface provided with the UVC chips and The lower surface opposite to the upper surface, the upper surface is provided with a pair of pads corresponding to the UVC chip, each of the UVC chips is arranged between a pair of the pad pairs and is electrically connected to it, the The UVC chips are connected in parallel with each other. The all-inorganic or semi-inorganic encapsulation structure of the UVC LEDs provided in parallel with the ultraviolet semiconductors improves the optical power of the UVC LEDs and increases the sterilization and disinfection function; the UVC chips do not interfere with each other, and the working life of the UVC LEDs is improved.

Figure 202011125778

Description

一种紫外半导体并联的UVC LED全无机或半无机封装结构A UVC LED all-inorganic or semi-inorganic encapsulation structure in parallel with ultraviolet semiconductors

技术领域technical field

本发明涉及LED封装领域,尤其涉及一种紫外半导体并联的UVC LED全无机或半无机封装结构。The invention relates to the field of LED packaging, in particular to an all-inorganic or semi-inorganic packaging structure of UVC LEDs connected in parallel with ultraviolet semiconductors.

背景技术Background technique

UV LED是指采用LED发光原理的紫外半导体光源,包括200nm~400nm 之间的所有电磁辐射波长,根据其发光波长可进一步区分为 UVA(320nm~400nm,长波紫外线)、UVB(280nm~315nm,中波紫外线)和UVC(200nm~280nm,短波紫外线)波段。其中,UVC波段由于其在杀菌消毒方面的优异表现,UVC LED在杀菌消毒领域具有明显的技术优势和广泛的应用前景。UV LED refers to an ultraviolet semiconductor light source that adopts the principle of LED light emission, including all electromagnetic radiation wavelengths between 200nm and 400nm. Wave ultraviolet) and UVC (200nm ~ 280nm, short-wave ultraviolet) bands. Among them, UVC band has obvious technical advantages and broad application prospects in the field of sterilization and disinfection due to its excellent performance in sterilization and disinfection.

由于UVC LED电光转换效率问题,现有技术中的UVC LED器件具有光功率不足的情况,市场已有采用多颗UVC芯片串联的UVC LED器件,此类器件只要有一个UVC芯片坏掉,其他UVC芯片均处于不可用的状况,造成浪费。Due to the problem of the electro-optical conversion efficiency of UVC LEDs, the UVC LED devices in the prior art have insufficient optical power. There are already UVC LED devices in the market that use multiple UVC chips in series. For such devices, as long as one UVC chip is broken, other UVC LEDs are damaged. The chips are all in an unusable state, resulting in waste.

发明内容SUMMARY OF THE INVENTION

鉴于上述问题,本发明提出了一种紫外半导体并联的UVC LED全无机或半无机封装结构以改善上述问题。In view of the above problems, the present invention proposes an all-inorganic or semi-inorganic packaging structure for UVC LEDs in parallel with ultraviolet semiconductors to improve the above problems.

第一方面,本发明提供了一种紫外半导体并联的UVC LED全无机或半无机封装结构,包括基板、设置于所述基板上的至少两个UVC芯片,所述基板包括设置有UVC芯片的上表面和与所述上表面相对的下表面,所述上表面设置有与所述UVC芯片对应的焊盘对,每个所述UVC芯片设置于一对所述焊盘对之间并与其电性连接,所述UVC芯片之间相互并联。In a first aspect, the present invention provides an all-inorganic or semi-inorganic packaging structure for UVC LEDs in parallel with ultraviolet semiconductors, comprising a substrate, at least two UVC chips disposed on the substrate, and the substrate includes an upper surface provided with the UVC chips. a surface and a lower surface opposite to the upper surface, the upper surface is provided with a pair of pads corresponding to the UVC chips, and each of the UVC chips is arranged between a pair of the pads and electrically connected to it connected, the UVC chips are connected in parallel with each other.

优选地,所述UVC芯片数为两个,所述焊盘对由焊盘正极和与所述焊盘正极间隔设置的焊盘负极组成,所述焊盘对包括第一焊盘对、与所述第一焊盘对间隔设置的第二焊盘对,所述焊盘正极和所述焊盘负极之间形成的间隔与所述第一焊盘对和所述第二焊盘对之间形成的间隔相等。Preferably, the number of the UVC chips is two, the pad pair is composed of a pad positive electrode and a pad negative electrode spaced from the pad positive electrode, and the pad pair includes a first pad pair, a The first pad pair is spaced apart from the second pad pair, and the interval formed between the positive electrode of the pad and the negative electrode of the pad is formed between the first pad pair and the second pad pair. interval is equal.

优选地,两对所述焊盘对形成间隔设置的四等分圆,两个所述UVC芯片相对称设置且位于一对所述焊盘对的中间位置。Preferably, two pairs of the pad pairs form a quarter circle arranged at intervals, and the two UVC chips are symmetrically arranged and located in the middle of a pair of the pad pairs.

优选地,所述下表面设置有与所述焊盘对相对应的电极对,所述基板贯穿设有连通所述焊盘对与所述电极对的导电部。Preferably, an electrode pair corresponding to the pad pair is provided on the lower surface, and a conductive portion connecting the pad pair and the electrode pair is provided through the substrate.

优选地,所述UVC芯片为倒装UVC芯片或垂直UVC芯片。Preferably, the UVC chip is a flip-chip UVC chip or a vertical UVC chip.

优选地,还包括固定于所述基板上且围绕所述UVC芯片的金属框、设置于所述金属框远离所述基板一侧的玻璃件,所述玻璃件靠近所述基板一侧设置有金属层,所述金属层与所述金属框之间通过焊接层焊接。Preferably, it also includes a metal frame fixed on the substrate and surrounding the UVC chip, a glass piece disposed on the side of the metal frame away from the substrate, and a metal frame disposed on the side of the glass piece close to the substrate layer, the metal layer and the metal frame are welded by a welding layer.

优选地,所述金属层为Ag层或多金属合金,所述焊接层为锡膏合金。Preferably, the metal layer is an Ag layer or a multi-metal alloy, and the soldering layer is a solder paste alloy.

优选地,所述金属层的厚度为5μm~500μm,所述焊接层的厚度为5μ m~500μm。Preferably, the thickness of the metal layer is 5 μm˜500 μm, and the thickness of the welding layer is 5 μm˜500 μm.

优选地,所述焊盘对的焊盘正极或焊盘负极上设有缺口标记或图形标记。Preferably, a notch mark or a graphic mark is provided on the positive electrode of the pad or the negative electrode of the pad of the pad pair.

优选地,还包括设置于所述基板且与所述UVC芯片数量对应的齐纳二极管,每个所述齐纳二极管分别与一个所述UVC芯片并联。Preferably, the method further includes Zener diodes disposed on the substrate and corresponding to the number of the UVC chips, and each of the Zener diodes is respectively connected in parallel with one of the UVC chips.

本发明的技术效果为:本发明提供的紫外半导体并联的UVC LED全无机或半无机封装结构提高了UVC LED的光功率,增大杀菌消毒功能;UVC 芯片之间互不干扰,提高UVCLED的工作寿命。The technical effects of the present invention are as follows: the all-inorganic or semi-inorganic encapsulation structure of the UVC LEDs in parallel with the ultraviolet semiconductors provided by the present invention improves the optical power of the UVC LEDs and increases the sterilization and disinfection function; the UVC chips do not interfere with each other, and the work of the UVC LEDs is improved. life.

另外,本发明中UVC芯片与焊盘对的相对设置利用圆等分结构使得 UVC LED光功率的一致性高,发光均匀。In addition, the relative arrangement of the UVC chip and the pad pair in the present invention utilizes a circular bisected structure, so that the UVC LED has a high uniformity of optical power and uniform light emission.

附图说明Description of drawings

图1为本发明一实施例中紫外半导体并联的UVC LED全无机或半无机封装内部结构俯视图;FIG. 1 is a top view of the internal structure of an all-inorganic or semi-inorganic package of UVC LEDs in parallel with ultraviolet semiconductors according to an embodiment of the present invention;

图2为本发明一实施例中紫外半导体并联的UVC LED全无机或半无机封装结构仰视图;2 is a bottom view of an all-inorganic or semi-inorganic packaging structure of UVC LEDs in parallel with ultraviolet semiconductors according to an embodiment of the present invention;

图3为图1中A-A面结合玻璃件整体的截面图;Fig. 3 is the sectional view of A-A surface in Fig. 1 combined with glass piece as a whole;

图4为A-A面在另一实施例中结合玻璃件整体的截面图;FIG. 4 is a cross-sectional view of the A-A surface combined with the whole glass member in another embodiment;

图5为本发明另一实施例中紫外半导体并联的UVC LED全无机或半无机封装内部结构俯视图。5 is a top view of the internal structure of an all-inorganic or semi-inorganic package of a UVC LED with UV semiconductors connected in parallel according to another embodiment of the present invention.

基板1Substrate 1 上表面11top surface 11 下表面12lower surface 12 绝缘区121Insulation area 121 散热区122Heat dissipation area 122 UVC芯片2UVC chip 2 齐纳二极管3Zener Diode 3 金属框4metal frame 4 焊盘对5Pad pair 5 第一焊盘对51first pad pair 51 第二焊盘对52second pad pair 52 电极对6Electrode pair 6 第一电极对61The first electrode pair 61 第二电极对62The second electrode pair 62 焊接层7Solder layer 7 导电部8Conductive part 8 玻璃件9glass piece 9 金属层91Metal layer 91

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

本发明提供了一种紫外半导体并联的UVC LED全无机或半无机封装结构,如图1-5所示,包括基板1、UVC芯片2、齐纳二极管3、金属框4、和玻璃件9。其中,UVC芯片2设置于基板1上且至少两个,且UVC芯片2 之间相互并联,优选地,UVC芯片2为倒装UVC芯片或垂直UVC芯片。齐纳二极管3的数量与UVC芯片2对应设置且与UVC芯片2并联为其提供静电保护。金属框4固定于基板1上且围绕UVC芯片2、齐纳二极管3设置。基板1上靠近UVC芯片2的一侧设置有与UVC芯片2对应的焊盘对5,每个UVC芯片2设置于一对焊盘对5之间并与焊盘对5电性连接,基板1另一侧设置有与焊盘对5相对应导通的电极对6,如图2所示。玻璃件9设置于金属框4远离基板1一侧且与基板1形成空腔,玻璃件9靠近基板1一侧设置有用于焊接的金属层91,金属层91与金属框4之间通过焊接层7焊接。其中,玻璃件9优选为玻璃透镜,金属层91的厚度优选为5μm~500μm,焊接层7的厚度优选为5μm~500μm。本发明提供紫外半导体并联的UVC LED全无机或半无机封装结构可以替代市场上现有的UVC芯片功率不足的产品,大大增加封装灯珠的功效,提高UVC LED的光功率,增大杀菌消毒功能;且UVC芯片2之间采用相互并联的方式可以使得每个UVC芯片2之间互不干扰,相对现有技术中的UVC LED增加了其使用寿命,具有独立电压,独立电流且独立控制。同时,采用全无机或半无机封装结构的UVCLED 稳定性高、寿命较长。The present invention provides an all-inorganic or semi-inorganic encapsulation structure of UVC LEDs in parallel with ultraviolet semiconductors, as shown in Figs. Wherein, at least two UVC chips 2 are disposed on the substrate 1, and the UVC chips 2 are connected in parallel with each other. Preferably, the UVC chips 2 are flip-chip UVC chips or vertical UVC chips. The number of Zener diodes 3 is set corresponding to the UVC chip 2 and is connected in parallel with the UVC chip 2 to provide electrostatic protection. The metal frame 4 is fixed on the substrate 1 and is arranged around the UVC chip 2 and the Zener diode 3 . The side of the substrate 1 close to the UVC chip 2 is provided with a pair of pads 5 corresponding to the UVC chip 2. Each UVC chip 2 is arranged between a pair of pads 5 and is electrically connected to the pads 5. The substrate 1 The other side is provided with an electrode pair 6 that is conductive with the pad pair 5 , as shown in FIG. 2 . The glass piece 9 is arranged on the side of the metal frame 4 away from the substrate 1 and forms a cavity with the substrate 1. The glass piece 9 is provided with a metal layer 91 for welding on the side close to the substrate 1, and a welding layer passes between the metal layer 91 and the metal frame 4. 7 Soldering. The glass member 9 is preferably a glass lens, the thickness of the metal layer 91 is preferably 5 μm˜500 μm, and the thickness of the welding layer 7 is preferably 5 μm˜500 μm. The invention provides an all-inorganic or semi-inorganic encapsulation structure of UVC LEDs in parallel with ultraviolet semiconductors, which can replace existing products with insufficient power of UVC chips on the market, greatly increase the efficacy of encapsulated lamp beads, improve the optical power of UVC LEDs, and increase the sterilization and disinfection function. And the UVC chips 2 are connected in parallel with each other so that each UVC chip 2 does not interfere with each other, which increases its service life compared to the UVC LED in the prior art, and has independent voltage, independent current and independent control. At the same time, UVCLEDs with all-inorganic or semi-inorganic encapsulation structure have high stability and long life.

基板1包括设置有UVC芯片2的上表面11和与上表面11相对的下表面12,上表面11设置有与UVC芯片2对应的焊盘对5,下表面12设置有绝缘区121、散热区122、与焊盘对5相对应的电极对6,其中,散热区122 为热电分离层,基板1贯穿设有连通焊盘对5与电极对6的导电部8。每对焊盘对5由焊盘正极和焊盘负极组成且焊盘正极与焊盘负极间隔设置,UVC 芯片2设置于一对焊盘正极和焊盘负极的间隔上且与焊盘对5之间电性连接。基板1上开设有上下贯通的通孔对,用于填充导通焊盘对5与电极对6的导电部8,导电部8为导电金属,且导电金属贯穿基板1。The substrate 1 includes an upper surface 11 provided with a UVC chip 2 and a lower surface 12 opposite to the upper surface 11. The upper surface 11 is provided with a pad pair 5 corresponding to the UVC chip 2, and the lower surface 12 is provided with an insulating area 121 and a heat dissipation area. 122 . An electrode pair 6 corresponding to the pad pair 5 , wherein the heat dissipation area 122 is a thermoelectric separation layer, and a conductive portion 8 connecting the pad pair 5 and the electrode pair 6 is formed through the substrate 1 . Each pair of pads 5 is composed of a positive electrode of a pad and a negative electrode of the pad, and the positive electrode of the pad and the negative electrode of the pad are arranged at an interval. electrical connection between. The substrate 1 is provided with a pair of through-holes penetrating up and down for filling the conductive parts 8 of the conductive pad pair 5 and the electrode pair 6 .

焊盘对之间形成间隔设置的圆等分结构,使各个UVC芯片之间均匀分布于基板。在一个实施例中,如图1-3所示,UVC芯片2和齐纳二极管3均有两个,两个UVC芯片2并联,且两个齐纳二极管3各自与对应电路中的 UVC芯片2并联,其中,两个相互并联的UVC芯片2可以使得产品的光功率增加一倍,使其空气净化的功率增加一倍。焊盘对5包括第一焊盘对51、与第一焊盘对51间隔设置的第二焊盘对52,同一个焊盘对的焊盘正极和焊盘负极之间形成的间隔与第一焊盘对51和第二焊盘对52之间形成的间隔相等。具体地,基板1为方形,两对焊盘对5形成间隔设置的四等分圆,基板 1的中心与四等分圆的圆心重合,两个UVC芯片2相对称设置且位于一对焊盘对5的中间位置;上方两个左右相对的四分之一圆为第一焊盘对51的正负极,下方两个左右相对的四分之一圆为第二焊盘对52的正负极;一个UVC 芯片2设置于上方的两个四等分圆之间的间隔上且连通焊盘对5的正负极,另一个UVC芯片2的部分覆盖于下方的两个四等分圆之间的间隔上且连通焊盘对5的正负极,且两个UVC芯片2之间相对焊盘对之间的间隔对称,每个UVC芯片2自身位置相对基板1和其对应的焊盘对5左右对称,如图1 所示,上述结构设置可以使得UVC LED的功率一致性高,发光均匀,且相互并联的两个UVC芯片使得LED的光功率增大一倍,相对于串联或单个的 UVC LED使用寿命更长。电极对6包括与第一焊盘对51对应的第一电极对 61和与第二焊盘对52对应的第二电极对62。具体地,可在焊盘对5或电极对6的正极或负极上做标记以便于区分正负极,避免因为正负极接反而导致的UVC LED封装不良,如缺口标记或者图形标记,图5为在第一焊盘对51 的焊盘负极上设置缺口标记,则其图示左侧为第一焊盘对51的正极,图示下侧为第二焊盘对52的焊盘负极,图示对角侧为第二焊盘对52的焊盘正极,相应的,也便于区分基板1另一侧的电极对6的正负极。所述金属层91为Ag层或多金属合金层,具体地,可使用Ag浆通过高温烧结将Ag浆烧结于玻璃件9上形成Ag层。优选地,焊接层7为锡膏合金,金属框4为Cu框,基板1为陶瓷基板;玻璃件9为半球形石英玻璃或平面板状玻璃,如图3-4 所示,图3为半球形石英玻璃,图4为平面板状玻璃,且玻璃件9悬空在双芯并联的UVC芯片2上,其中,玻璃件9为半球形石英玻璃可以提高UVC 光线透过率。An equally spaced circular structure is formed between the pad pairs, so that each UVC chip is evenly distributed on the substrate. In one embodiment, as shown in FIGS. 1-3 , there are two UVC chips 2 and two Zener diodes 3 , the two UVC chips 2 are connected in parallel, and each of the two Zener diodes 3 is connected to the UVC chip 2 in the corresponding circuit Parallel connection, wherein, two UVC chips 2 connected in parallel can double the optical power of the product and double the power of its air purification. The pad pair 5 includes a first pad pair 51 and a second pad pair 52 spaced apart from the first pad pair 51 . The intervals formed between the pad pair 51 and the second pad pair 52 are equal. Specifically, the substrate 1 is a square, two pairs of pad pairs 5 form a quarter circle arranged at intervals, the center of the substrate 1 coincides with the center of the quarter circle, and the two UVC chips 2 are symmetrically arranged and located in a pair of pads The middle position of pair 5; the upper two left and right opposite quarter circles are the positive and negative poles of the first pad pair 51, and the lower two left and right opposite quarter circles are the positive and negative poles of the second pad pair 52 pole; one UVC chip 2 is arranged on the interval between the two quadrants above and connects the positive and negative poles of the pad pair 5, and the other UVC chip 2 is partially covered between the two quadrants below. The space between the two UVC chips 2 is connected to the positive and negative electrodes of the pad pair 5, and the spacing between the two UVC chips 2 is symmetrical with respect to the pad pair. Each UVC chip 2 is positioned relative to the substrate 1 and its corresponding pad pair. 5. Left and right symmetry, as shown in Figure 1, the above structure can make the power consistency of the UVC LED high and the light emission uniform, and the two UVC chips in parallel with each other double the optical power of the LED, compared with the series or single UVC chips. UVC LEDs last longer. The electrode pair 6 includes a first electrode pair 61 corresponding to the first pad pair 51 and a second electrode pair 62 corresponding to the second pad pair 52. Specifically, marks can be made on the positive or negative poles of the pad pair 5 or the electrode pair 6 to distinguish the positive and negative poles, so as to avoid poor packaging of the UVC LED caused by the connection of the positive and negative poles, such as notch marks or graphic marks, Figure 5 In order to set a notch mark on the negative electrode of the pad of the first pad pair 51, the left side of the figure is the positive pole of the first pad pair 51, and the lower side of the figure is the negative pad of the second pad pair 52. The diagonal side is shown as the pad positive electrode of the second pad pair 52 , correspondingly, it is also convenient to distinguish the positive and negative electrodes of the electrode pair 6 on the other side of the substrate 1 . The metal layer 91 is an Ag layer or a multi-metal alloy layer. Specifically, the Ag layer can be formed by sintering the Ag paste on the glass member 9 through high temperature sintering using Ag paste. Preferably, the soldering layer 7 is a solder paste alloy, the metal frame 4 is a Cu frame, and the substrate 1 is a ceramic substrate; the glass member 9 is a hemispherical quartz glass or a flat plate glass, as shown in Figures 3-4, and Figure 3 is a hemisphere Fig. 4 is a flat plate glass, and the glass member 9 is suspended on the UVC chip 2 of the dual-core parallel connection, wherein the glass member 9 is a hemispherical quartz glass, which can improve the transmittance of UVC light.

综上所述,本发明提供了一种紫外半导体并联的UVC LED全无机或半无机封装结构,在采用全无机或半无机封装结构使其稳定性高、寿命较长的基础上,通过将UVC芯片并联设置,提高UVC LED的光功率至少一倍,增大杀菌消毒功能,且UVC芯片之间互不干扰,提高UVC LED的工作寿命。另外,本发明中UVC芯片与焊盘对的相对设置利用圆等分结构使得UVC LED光功率的一致性高,发光均匀,且更便于均匀分配并联的UVC LED。To sum up, the present invention provides an all-inorganic or semi-inorganic encapsulation structure for UVC LEDs connected in parallel with ultraviolet semiconductors. The chips are arranged in parallel to at least double the optical power of the UVC LED, increase the sterilization and disinfection function, and the UVC chips do not interfere with each other, improving the working life of the UVC LED. In addition, the relative arrangement of the UVC chip and the pad pair in the present invention utilizes a circular bisector structure, so that the uniformity of the UVC LED light power is high, the light emission is uniform, and it is more convenient to evenly distribute the parallel UVC LEDs.

最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不驱使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand: it can still be The technical solutions described in the foregoing embodiments are modified, or some technical features thereof are equivalently replaced; and these modifications or replacements do not drive the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1.一种紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,包括基板、设置于所述基板上的至少两个UVC芯片,所述基板包括设置有UVC芯片的上表面和与所述上表面相对的下表面,所述上表面设置有与所述UVC芯片对应的焊盘对,每个所述UVC芯片设置于一对所述焊盘对之间并与其电性连接,所述UVC芯片之间相互并联。1. an all-inorganic or semi-inorganic encapsulation structure of a UVC LED in parallel with an ultraviolet semiconductor, characterized in that it comprises a substrate, at least two UVC chips arranged on the substrate, and the substrate comprises an upper surface provided with a UVC chip and a UVC chip. a lower surface opposite to the upper surface, the upper surface is provided with a pair of pads corresponding to the UVC chips, each of the UVC chips is arranged between a pair of the pad pairs and is electrically connected to it, The UVC chips are connected in parallel with each other. 2.根据权利要求1所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述UVC芯片数为两个,所述焊盘对由焊盘正极和与所述焊盘正极间隔设置的焊盘负极组成,所述焊盘对包括第一焊盘对、与所述第一焊盘对间隔设置的第二焊盘对,所述焊盘正极和所述焊盘负极之间形成的间隔与所述第一焊盘对和所述第二焊盘对之间形成的间隔相等。2. The UVC LED all-inorganic or semi-inorganic encapsulation structure in parallel with ultraviolet semiconductors according to claim 1, wherein the number of the UVC chips is two, and the pad pair consists of a pad anode and a The positive electrode of the disk is composed of the negative electrode of the pad arranged at intervals, the pad pair includes a first pad pair, a second pad pair arranged at an interval from the first pad pair, the positive pad of the pad and the negative electrode of the pad The interval formed therebetween is equal to the interval formed between the first pad pair and the second pad pair. 3.根据权利要求2所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,两对所述焊盘对形成间隔设置的四等分圆,两个所述UVC芯片相对称设置且位于一对所述焊盘对的中间位置。3. The UVC LED all-inorganic or semi-inorganic encapsulation structure in parallel with ultraviolet semiconductors according to claim 2, characterized in that, two pairs of said pads form a quarter circle arranged at intervals, and two said UVC chips are in phase with each other. Symmetrically arranged and located in the middle of a pair of the pad pairs. 4.根据权利要求1所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述下表面设置有与所述焊盘对相对应的电极对,所述基板贯穿设有连通所述焊盘对与所述电极对的导电部。4 . The UVC LED all-inorganic or semi-inorganic packaging structure in parallel with ultraviolet semiconductors according to claim 1 , wherein the lower surface is provided with an electrode pair corresponding to the pad pair, and the substrate is provided with an electrode pair corresponding to the pad pair. 5 . There is a conductive portion connecting the pad pair and the electrode pair. 5.根据权利要求1所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述UVC芯片为倒装UVC芯片或垂直UVC芯片。5 . The all-inorganic or semi-inorganic packaging structure of UVC LED in parallel with ultraviolet semiconductors according to claim 1 , wherein the UVC chip is a flip-chip UVC chip or a vertical UVC chip. 6 . 6.根据权利要求1所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,还包括固定于所述基板上且围绕所述UVC芯片的金属框、设置于所述金属框远离所述基板一侧的玻璃件,所述玻璃件靠近所述基板一侧设置有金属层,所述金属层与所述金属框之间通过焊接层焊接。6 . The all-inorganic or semi-inorganic packaging structure of UVC LEDs connected in parallel with ultraviolet semiconductors according to claim 1 , further comprising a metal frame fixed on the substrate and surrounding the UVC chip, disposed on the metal A glass piece on the side of the frame away from the base plate is provided with a metal layer on the side of the glass piece close to the base plate, and the metal layer and the metal frame are welded by a welding layer. 7.根据权利要求6所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述金属层为Ag层或多金属合金,所述焊接层为锡膏合金。7 . The all-inorganic or semi-inorganic packaging structure for UVC LEDs connected in parallel with ultraviolet semiconductors according to claim 6 , wherein the metal layer is an Ag layer or a multi-metal alloy, and the soldering layer is a solder paste alloy. 8 . 8.根据权利要求6或7所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述金属层的厚度为5μm~500μm,所述焊接层的厚度为5μm~500μm。8 . The all-inorganic or semi-inorganic packaging structure of UVC LEDs connected in parallel with ultraviolet semiconductors according to claim 6 or 7 , wherein the thickness of the metal layer is 5 μm to 500 μm, and the thickness of the solder layer is 5 μm to 500 μm. 9 . . 9.根据权利要求3所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,所述焊盘对的焊盘正极或焊盘负极上设有缺口标记或图形标记。9 . The all-inorganic or semi-inorganic packaging structure of UVC LEDs connected in parallel with ultraviolet semiconductors according to claim 3 , wherein a notch mark or a graphic mark is provided on the positive electrode of the pad or the negative electrode of the pad of the pad pair. 10 . 10.根据权利要求1所述的紫外半导体并联的UVC LED全无机或半无机封装结构,其特征在于,还包括设置于所述基板且与所述UVC芯片数量对应的齐纳二极管,每个所述齐纳二极管分别与一个所述UVC芯片并联。10 . The UVC LED all-inorganic or semi-inorganic packaging structure in parallel with ultraviolet semiconductors according to claim 1 , further comprising Zener diodes disposed on the substrate and corresponding to the number of UVC chips, each of which is arranged on the substrate. 11 . The Zener diodes are respectively connected in parallel with one of the UVC chips.
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