CN110310947A - A UV LED all-inorganic packaging structure with prompt function - Google Patents
A UV LED all-inorganic packaging structure with prompt function Download PDFInfo
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- CN110310947A CN110310947A CN201910634824.7A CN201910634824A CN110310947A CN 110310947 A CN110310947 A CN 110310947A CN 201910634824 A CN201910634824 A CN 201910634824A CN 110310947 A CN110310947 A CN 110310947A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910000833 kovar Inorganic materials 0.000 claims description 11
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 2
- 238000004659 sterilization and disinfection Methods 0.000 abstract description 9
- 238000004887 air purification Methods 0.000 abstract description 6
- 239000011324 bead Substances 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
本发明涉及LED封装技术领域,提供了一种具有提示功能的UV LED全无机封装结构,包括基板、UVA芯片、UVC芯片和封盖,所述UVA芯片、UVC芯片设置于所述基板上,所述封盖包括固定在所述基板上且包围所述UVA芯片、UVC芯片的金属框和设置在所述金属框上端面的盖板,所述盖板悬空在所述UVA芯片、UVC芯片的上方。本发明的封装结构可以起到提示作用,让用户接收可见光信号,还能增加封装灯珠的功效,使其能同时拥有UVC灯珠杀菌消毒功能和UVA灯珠紫外固化、空气净化等功能,同时,采用全无机封装结构稳定性高、寿命较长。
The invention relates to the technical field of LED packaging, and provides a UV LED all-inorganic packaging structure with a prompt function, comprising a substrate, a UVA chip, a UVC chip and a cover, wherein the UVA chip and the UVC chip are arranged on the substrate, so that the The cover includes a metal frame fixed on the substrate and surrounding the UVA chip and the UVC chip, and a cover plate arranged on the upper end face of the metal frame, and the cover plate is suspended above the UVA chip and the UVC chip. . The packaging structure of the present invention can play a prompting role, allowing users to receive visible light signals, and can also increase the efficacy of packaging lamp beads, so that it can simultaneously have the functions of UVC lamp beads sterilization and disinfection, UVA lamp beads ultraviolet curing, air purification and other functions, and at the same time , The use of all-inorganic packaging structure has high stability and long life.
Description
技术领域technical field
本发明涉及LED封装领域,尤其涉及一种具有提示功能的UV LED全无机封装结构。The invention relates to the field of LED packaging, in particular to a UV LED all-inorganic packaging structure with a prompt function.
背景技术Background technique
新兴的紫外光源采用LED发光原理,称为“UV LED”,与传统汞灯紫外光源相比,拥有以下优点:1、紫外LED是全固态照明器件,机械结构稳定,便携,耐冲击,工作电压小,且无需复杂的驱动电路;2、紫外LED响应速率高即开即用,无需预热等复杂操作,使用方便;3、传统汞灯多谱线发光,紫外LED发光峰单一,且发光波长连续可调;4、紫外LED材料中不含对环境有害的物质,同时,紫外LED节约高达70%的能源,是真正的环保节能光源;5、紫外LED寿命在5000小时以上,远远超过汞灯的寿命。因此,UV LED正逐渐取代传统汞灯紫外光源在市场上的份额。The emerging ultraviolet light source adopts the LED light-emitting principle, called "UV LED". Compared with the traditional mercury lamp ultraviolet light source, it has the following advantages: 1. The ultraviolet LED is an all-solid-state lighting device, with stable mechanical structure, portability, impact resistance, and working voltage. Small, and does not require complex drive circuits; 2. The UV LED has a high response rate and is ready to use, without complex operations such as preheating, and is easy to use; 3. The traditional mercury lamp emits multiple spectral lines, and the UV LED has a single luminous peak and a luminous wavelength. Continuously adjustable; 4. The UV LED material does not contain substances that are harmful to the environment. At the same time, the UV LED saves up to 70% of energy, which is a real environment-friendly and energy-saving light source; 5. The UV LED has a life span of more than 5,000 hours, far exceeding mercury lamp life. Therefore, UV LED is gradually replacing the traditional mercury lamp UV light source in the market share.
UV LED包括200nm~400nm之间的所有电磁辐射波长,应用市场目前根据其发光波长可以分为UVA(320nm~400nm,也称为“长波紫外线”),应用于紫外固化、印刷、紫外空气净化等;UVB(275nm~320nm,也称为“中波紫外线”),应用于紫外光疗、防伪检测、植物生长等;UVC(200nm~275nm,也称为“短波紫外线”)波段,广泛应用于杀菌消毒、医疗、特殊设备等。UV LED includes all electromagnetic radiation wavelengths between 200nm and 400nm. The application market can currently be divided into UVA (320nm~400nm, also known as "long-wave ultraviolet") according to its emission wavelength. It is used in ultraviolet curing, printing, ultraviolet air purification, etc. ; UVB (275nm ~ 320nm, also known as "medium wave ultraviolet"), used in ultraviolet phototherapy, anti-counterfeiting detection, plant growth, etc.; UVC (200nm ~ 275nm, also known as "short wave ultraviolet") band, widely used in sterilization and disinfection , medical, special equipment, etc.
各波长紫外线中,只有短波紫外线UVC具有杀菌消毒作用,属于纯物理消毒方法,具有广谱高效、快速彻底、无需添加化学药剂、不存在抗药性、无二次污染等特点。UVC对细菌、病毒的杀菌作用一般在几秒内完成,几乎是瞬时发生,杀菌消毒能力比氯大600~3000倍,并且几乎所有细菌、病毒都能高效率杀灭。因此,UVC在杀菌消毒市场的应用前景一片光明。由于UVC LED的波长在不可见光波段,用户在使用UVC LED时并不能看见任何光亮,因此会给用户造成一种困扰是UVC LED是否在正常工作。同时,目前紫外LED封装产品应用分类明确,单一产品只有一种功能,例如UVC产品只有杀菌功能,UVA产品只有紫外固化、空气净化功能,缺少UV功能集成性产品。Among the ultraviolet rays of various wavelengths, only short-wave ultraviolet UVC has the effect of sterilization and disinfection, which belongs to the pure physical disinfection method. The sterilization effect of UVC on bacteria and viruses is generally completed within a few seconds, which occurs almost instantaneously. Therefore, the application prospect of UVC in the sterilization and disinfection market is bright. Since the wavelength of the UVC LED is in the invisible light band, the user cannot see any light when using the UVC LED, so it will cause a confusion to the user whether the UVC LED is working normally. At the same time, the current application classification of UV LED packaging products is clear, and a single product has only one function. For example, UVC products only have sterilization functions, UVA products only have UV curing and air purification functions, and lack UV function integration products.
发明内容SUMMARY OF THE INVENTION
为解决上述问题,本发明提供了一种具有提示功能的UV LED全无机封装结构,包括基板、UVA芯片、UVC芯片和封盖,所述UVA芯片、UVC芯片设置于所述基板上,所述封盖包括固定在所述基板上且包围所述UVA芯片、UVC芯片的金属框和设置在所述金属框上端面的盖板,所述盖板悬空在所述UVA芯片、UVC芯片的上方。In order to solve the above problems, the present invention provides a UV LED all-inorganic packaging structure with a prompt function, including a substrate, a UVA chip, a UVC chip and a cover, the UVA chip and the UVC chip are arranged on the substrate, and the The cover includes a metal frame fixed on the substrate and surrounding the UVA chip and the UVC chip, and a cover plate arranged on the upper end surface of the metal frame, and the cover plate is suspended above the UVA chip and the UVC chip.
优选地,所述基板内贯穿开设有通孔对,所述通孔对内分别填充满导电金属,并在所述基板的上表面相应地形成焊盘对、在下表面相应地形成电极对,所述UVA芯片与所述UVC芯片分别设置于所述焊盘对中间并与其电性连接、置于所述基板上。Preferably, pairs of through holes are formed through the substrate, and the pairs of through holes are filled with conductive metal respectively, and corresponding pad pairs are formed on the upper surface of the substrate and electrode pairs are formed on the lower surface, so The UVA chip and the UVC chip are respectively disposed in the middle of the pad pair and electrically connected with them, and placed on the substrate.
更优选地,所述焊盘对包括相互分开的焊盘对一、焊盘对二,所述焊盘对一的形状为从靠近所述UVA芯片与所述UVC芯片的一侧向外不断缩小,所述焊盘对二的形状为从靠近所述UVA芯片与所述UVC芯片的一侧向外逐渐扩大;所述电极对包括与所述焊盘对相对应的电极对一、电极对二。More preferably, the pad pair includes a pad pair one and a pad pair two separated from each other, and the shape of the pad pair one is to continuously shrink outward from a side close to the UVA chip and the UVC chip. , the shape of the pad pair 2 is to gradually expand outward from the side close to the UVA chip and the UVC chip; the electrode pair includes an electrode pair 1 and an electrode pair 2 corresponding to the pad pair. .
更优选地,所述UVC芯片设置于所述焊盘对一之间并与其电性连接,所述UVA芯片设置于所述焊盘对二之间并与其电性连接。More preferably, the UVC chip is disposed between and electrically connected to the first pair of pads, and the UVA chip is disposed between and electrically connected to the second pair of pads.
优选地,所述UVA芯片为正装UVA芯片、垂直UVA芯片或倒装UVA芯片,所述UVC芯片为正装UVC芯片、垂直UVC芯片或倒装UVC芯片。Preferably, the UVA chip is a front-mounted UVA chip, a vertical UVA chip or a flip-chip UVA chip, and the UVC chip is a front-mounted UVC chip, a vertical UVC chip or a flip-chip UVC chip.
优选地,还包括设置于所述基板下的热电分离层。Preferably, it also includes a thermoelectric separation layer disposed under the substrate.
优选地,还包括设置于所述基板上、与所述UVC芯片并联的齐纳管。Preferably, it also includes a Zener tube disposed on the substrate and connected in parallel with the UVC chip.
优选地,所述盖板为石英玻璃盖板,所述石英玻璃盖板与金属框之间依次设有第一金属层和第二金属层。Preferably, the cover plate is a quartz glass cover plate, and a first metal layer and a second metal layer are sequentially provided between the quartz glass cover plate and the metal frame.
优选地,所述第一金属层为可伐合金,所述第二金属层为金或金锡合金。Preferably, the first metal layer is Kovar alloy, and the second metal layer is gold or gold-tin alloy.
优选地,所述第一金属层厚度为10μm~200μm,所述第二金属层厚度为5μm~50μm。Preferably, the thickness of the first metal layer is 10 μm˜200 μm, and the thickness of the second metal layer is 5 μm˜50 μm.
本发明的具有提示功能的UV LED全无机封装结构既能发出波长为200nm~275nm的“短波紫外线”,还能够发出波长为320nm~400nm的“长波紫外线”,该封装结构发出的长波紫外线为可见波段,在使用时可以起到提示作用,让用户有一个感性认识,同时也能增加封装灯珠的功效,使其能同时拥有杀菌、消毒功能和紫外固化、空气净化功能。The UV LED all-inorganic encapsulation structure with the prompting function of the present invention can emit not only "short-wave ultraviolet rays" with a wavelength of 200nm-275nm, but also "long-wave ultraviolet rays" with a wavelength of 320nm-400nm, and the long-wave ultraviolet rays emitted by the encapsulation structure are visible The wavelength band can play a prompting role when using it, allowing users to have a perceptual understanding, and at the same time, it can increase the efficacy of the packaged lamp beads, so that it can simultaneously have sterilization, disinfection functions, UV curing, and air purification functions.
另外,本发明UV LED封装结构采用全无机封装方式,能有效解决紫外高能辐射产生的材料老化脆化,有机材料热膨胀系数大而产生的热应力,有机材料透湿透氧造成的湿应力及气密性差等问题,增强UV LED封装结构的稳定性,提高UV LED的工作寿命。In addition, the UV LED packaging structure of the present invention adopts an all-inorganic packaging method, which can effectively solve the aging and embrittlement of materials caused by ultraviolet high-energy radiation, the thermal stress caused by the large thermal expansion coefficient of organic materials, and the moisture and gas caused by moisture and oxygen permeability of organic materials. To solve problems such as poor density, enhance the stability of the UV LED packaging structure and improve the working life of the UV LED.
附图说明Description of drawings
图1实施例1中具有提示功能的UV LED全无机封装结构俯视图;The top view of the UV LED all-inorganic packaging structure with the prompt function in the embodiment 1 of FIG. 1;
图2实施例1和实施例3中具有提示功能的UV LED全无机封装结构仰视图;Figure 2 is a bottom view of the UV LED all-inorganic encapsulation structure with a prompt function in Embodiments 1 and 3;
图3图1中A-A面的截面图;Figure 3 is a cross-sectional view of the A-A plane in Figure 1;
图4图1中B-B面的截面图;Figure 4 is a cross-sectional view of the B-B plane in Figure 1;
图5实施例2中具有提示功能的UV LED全无机封装结构俯视图;Figure 5 is a top view of the UV LED all-inorganic packaging structure with a prompt function in Example 2;
图6实施例2中具有提示功能的UV LED全无机封装结构仰视图;Figure 6 bottom view of the UV LED all-inorganic packaging structure with prompt function in Example 2;
图7实施例3中具有提示功能的UV LED全无机封装结构俯视图。FIG. 7 is a top view of the UV LED all-inorganic packaging structure with the prompt function in the third embodiment.
其中,1-基板;2-金属框;3-焊盘对一;4-焊盘对二;5-正装UVA芯片;6-导电线材;7-倒装UVC芯片;8-倒装齐纳管;9-盖板;901-第一金属层;902-第二金属层;10-电极对一;11-热电分离结构;12-电极对二;13-金属连接层;14-焊盘对三;15-倒装UVA芯片;16-电极对三;17-正装UVC芯片;18-正装齐纳管。Among them, 1-substrate; 2-metal frame; 3-pad to one; 4-pad to two; 5-positive UVA chip; 6-conductive wire; 7-flip-chip UVC chip; 8-flip-chip Zener tube 9-cover plate; 901-first metal layer; 902-second metal layer; 10-electrode pair one; 11-thermoelectric separation structure; 12-electrode pair two; 13-metal connection layer; 14-pad pair three ; 15- Flip-chip UVA chip; 16- Electrode pair three; 17- Front-mounted UVC chip; 18- Front-mounted Zener tube.
具体实施方式Detailed ways
为了使本发明要解决的技术问题、技术方案及有益效果更为清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解此处描述的具体实施例仅用以解释本发明,并不用于限定本发明。In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
实施例1:Example 1:
基板1为氧化铝基片,进行前处理清洁,然后在氧化铝基片上以雷射方式钻2个通孔对,2个通孔对并列排布,利用溅镀的方式使导电金属充满通孔对,导电金属为铜,并在基片上、下表面各形成厚度为10μm的导电金属层。The substrate 1 is an aluminum oxide substrate, which is pre-treated and cleaned, and then two through-hole pairs are drilled on the aluminum oxide substrate by laser, and the two through-hole pairs are arranged side by side, and the conductive metal is used to fill the through holes by sputtering. Yes, the conductive metal is copper, and a conductive metal layer with a thickness of 10 μm is formed on the upper and lower surfaces of the substrate.
如图1和图2所示,用黄光微影方式,设置光阻覆盖基板1的上表面和下表面,光阻覆盖基板1后进行曝光、显影、蚀刻、去膜。上表面未被覆盖的区域形成焊盘对一3和焊盘对二4,焊盘对一3下方、基板1下表面未被覆盖的区域形成电极对一10,焊盘对二4下方、基板1下表面未被覆盖的区域形成电极对二12,电极对一10和电极对二12之间形成热电分离结构11。所述焊盘对一3的形状为从靠近所述UVA芯片与所述UVC芯片的一侧向外不断缩小,呈对称的“L”字形,所述焊盘对二4的形状为从靠近所述UVA芯片与所述UVC芯片的一侧向外逐渐扩大,呈对称的“7”形。然后在基板1上电镀厚度为5μm的金层,能有效防止铜氧化。As shown in FIG. 1 and FIG. 2 , a photoresist is arranged to cover the upper and lower surfaces of the substrate 1 by means of yellow light lithography. After the photoresist covers the substrate 1 , exposure, development, etching, and film removal are performed. The uncovered area on the upper surface forms pad pair 1 3 and pad pair 2 4, the area below pad pair 1 3 and the uncovered area on the lower surface of substrate 1 forms electrode pair 1 10, below pad pair 2 4, the substrate 1. The uncovered area of the lower surface forms the second electrode pair 12, and the thermoelectric separation structure 11 is formed between the first electrode pair 10 and the second electrode pair 12. The shape of the pair of pads 1 3 is continuously shrinking from the side close to the UVA chip and the UVC chip, in a symmetrical "L" shape, and the shape of the pair of pads 4 is from the side close to the UVC chip. One side of the UVA chip and the UVC chip gradually expands outwards, forming a symmetrical "7" shape. Then, a gold layer with a thickness of 5 μm is electroplated on the substrate 1, which can effectively prevent copper oxidation.
使用点胶机将环氧树脂固晶胶点在焊盘对二4中间的空白区,然后将UVA芯片压置于环氧树脂固晶胶上,150℃条件下烘烤1小时,UVA芯片即可固定在基板上。将导电线材6的一端与UVA芯片的电极相接,另一端与焊盘对二4相连接,采用超声波热压法将连接处固定。所述的导电线材6为金线、银镀金合金线、铜镀钯合金线、银线或铝线。UVA芯片为正装UVA芯片5。Use a glue dispenser to place the epoxy resin solidification glue on the blank area in the middle of the pad pair 24, then press the UVA chip on the epoxy resin solidification glue, bake at 150 ° C for 1 hour, the UVA chip is Can be fixed on the base plate. One end of the conductive wire 6 is connected to the electrode of the UVA chip, and the other end is connected to the pad pair 2 4 , and the connection is fixed by the ultrasonic hot pressing method. The conductive wires 6 are gold wires, silver gold-plated alloy wires, copper palladium-plated alloy wires, silver wires or aluminum wires. The UVA chip is a full UVA chip 5.
将常温锡膏点在焊盘对一3上,将UVC芯片和齐纳管并联放置于锡膏上,然后将基板1放置于加热台上加热,温度200℃,时间8s~10s,取下基板1后自然冷却,UVC芯片与基板1即可固定起来。齐纳管与UVC芯片并联,起到防静电击穿的作用。UVC芯片为倒装UVC芯片7,齐纳管为倒装齐纳管8。Put the normal temperature solder paste on the pad pair one 3, place the UVC chip and the Zener tube on the solder paste in parallel, then place the substrate 1 on the heating table to heat, the temperature is 200 ℃, the time is 8s ~ 10s, and the substrate is removed After 1, it is cooled naturally, and the UVC chip and the substrate 1 can be fixed. The Zener tube is connected in parallel with the UVC chip to prevent electrostatic breakdown. The UVC chip is a flip-chip UVC chip 7 , and the Zener tube is a flip-chip Zener tube 8 .
采用铜或铝制作金属框2,金属框2内侧于靠近上端面处设置凹槽,在金属框2外表面电镀厚度为50μm金锡层;将金属框2与金属连接层13之间放入金锡共晶薄片焊料,在N2或Ar保护气氛中加热,使其熔融,然后施加压力,自然冷却,使金属框2与基板1结合。The metal frame 2 is made of copper or aluminum. The inner side of the metal frame 2 is provided with a groove near the upper end face, and the outer surface of the metal frame 2 is electroplated with a gold-tin layer with a thickness of 50 μm; The tin eutectic sheet solder is heated in a N2 or Ar protective atmosphere to melt it, and then pressure is applied to cool it naturally, so that the metal frame 2 is combined with the substrate 1 .
如图3,取矩形平面石英玻璃作为盖板9,在其下表面四周边缘溅镀厚度为10μm的牌号为4J29的第一金属层901,第一金属层为可伐合金,在第一金属层901上再电镀厚度为5μm金层作为第二金属层902。其中,第一金属层901为可伐合金4J29牌号,在0~300℃膨胀系数为(4.7~5.5)×10-6/K,石英玻璃膨胀系数0.55×10-6/K,金的膨胀系数14.2×10-6/K,可伐合金的膨胀系数介于石英玻璃和金或金锡之间,用可伐合金作为连接石英玻璃和金的金属,可避免热应力问题。石英玻璃膨胀系数小,不易产生应力,使封装结构更稳定;石英玻璃透湿、透氧率极低,使封装结构气密性更好。As shown in Figure 3, take the rectangular plane quartz glass as the cover plate 9, and sputter the first metal layer 901 of 4J29 with a thickness of 10 μm around the edge of the lower surface. The first metal layer is a Kovar alloy. A gold layer with a thickness of 5 μm is re-plated on 901 as the second metal layer 902 . The first metal layer 901 is Kovar 4J29, the expansion coefficient at 0-300°C is (4.7-5.5)×10 -6 /K, the expansion coefficient of quartz glass is 0.55×10 -6 /K, and the expansion coefficient of gold is 14.2×10 -6 /K, the expansion coefficient of Kovar alloy is between quartz glass and gold or gold-tin. Using Kovar alloy as the metal connecting quartz glass and gold can avoid thermal stress problems. Quartz glass has a small expansion coefficient and is not easy to generate stress, making the package structure more stable; quartz glass has extremely low moisture permeability and oxygen permeability, making the package structure more airtight.
盖板9的四周边缘嵌入金属框2的凹槽中,在金属框2凹槽上点助焊剂,将盖板9下表面四周边缘的金层902对齐置于金属框2凹槽上,将金属框与盖板共同放入共晶炉中在N2或Ar保护气氛中加热,进行共晶反应,使盖板9悬空于UVA芯片、UVC芯片和齐纳管的上方,且盖板9上表面与金属框2上表面平齐。即得到本实施例1的封装结构。The surrounding edges of the cover plate 9 are embedded in the grooves of the metal frame 2, and the flux is placed on the grooves of the metal frame 2, and the gold layer 902 on the surrounding edges of the lower surface of the cover plate 9 is aligned and placed on the grooves of the metal frame 2. The frame and the cover plate are put into the eutectic furnace together and heated in a N2 or Ar protective atmosphere, and the eutectic reaction is carried out, so that the cover plate 9 is suspended above the UVA chip, the UVC chip and the Zener tube, and the upper surface of the cover plate 9 is suspended. Be flush with the top surface of the metal frame 2. That is, the package structure of Embodiment 1 is obtained.
本实施例实用热电分离结构11用来增强芯片的散热,防止芯片因高温失效。本实施例的UV LED全无机封装结构中UVA焊盘和UVC焊盘分别连接不同的电极,焊盘分开设置可以实现独立控制,在不同场景、不同需求下使用本发明的封装结构。焊盘对一3和焊盘对二4的形状设计,可以一定程度上增大基板上焊盘面积,焊盘为金属材质,相比于基板具有一定的反光性能,本实施例的设计可以提升器件的光提取性能。更重要的是,由于UVA芯片往往比较宽,所以陶瓷基板上UVA焊盘区域比较窄,一方面增加了固定导电线材的难度,另一方面对UVA焊盘的电学性能也会有不利影响。本实施例焊盘对二4外侧宽的结构,使得导电线材与UVA焊盘固定更容易进行,增大了电容量,提高了器件的稳定性,焊盘对一3内宽外窄的设计,可以满足多个UVC芯片的封装。将齐纳管与UVC芯片并联固定在焊盘对一3上,可以起到稳压与防静电击穿的作用,保护UVC芯片。In this embodiment, the thermoelectric separation structure 11 is used to enhance the heat dissipation of the chip and prevent the chip from failing due to high temperature. In the UV LED all-inorganic packaging structure of this embodiment, the UVA pads and the UVC pads are respectively connected to different electrodes, and the pads are separately arranged to realize independent control, and the packaging structure of the present invention can be used in different scenarios and different needs. The shape design of pad pair 1 3 and pad pair 2 4 can increase the pad area on the substrate to a certain extent. The pad is made of metal material, which has a certain reflective performance compared to the substrate. The design of this embodiment can improve the The light extraction performance of the device. More importantly, since the UVA chip is often wider, the UVA pad area on the ceramic substrate is relatively narrow, which increases the difficulty of fixing the conductive wire on the one hand, and adversely affects the electrical properties of the UVA pad on the other hand. The structure of the pad pair 2 and 4 in this embodiment is wide outside, which makes it easier to fix the conductive wire and the UVA pad, increases the capacitance, and improves the stability of the device. It can meet the packaging of multiple UVC chips. Fixing the Zener tube and UVC chip in parallel on the pad pair one 3 can play the role of voltage regulation and anti-static breakdown, and protect the UVC chip.
实施例2Example 2
如图5所示,基板1为氮化铝基片,进行前处理清洁,然后在氮化铝基片上以深反应性离子蚀刻方式钻1个通孔对,利用溅镀的方式使导电金属充满通孔对,导电金属为铜,并在基片上、下表面各形成厚度为1000μm的导电金属层。As shown in Figure 5, the substrate 1 is an aluminum nitride substrate, which is pre-treated and cleaned, and then a through hole pair is drilled on the aluminum nitride substrate by deep reactive ion etching, and the conductive metal is filled with the conductive metal by sputtering. For the hole pair, the conductive metal is copper, and a conductive metal layer with a thickness of 1000 μm is formed on the upper and lower surfaces of the substrate.
如图5和图6所示,用黄光微影方式,设置光阻覆盖基板1的上表面和下表面,光阻覆盖基板1后进行曝光、显影、蚀刻、去膜。上表面未被覆盖的区域形成焊盘对三14,焊盘对下方、基板下表面未被覆盖的区域形成电极对三16,电极对之间形成热电分离结构11。然后在基板1上电镀厚度为50μm的金层,以防止铜氧化。As shown in FIG. 5 and FIG. 6 , a photoresist is arranged to cover the upper surface and the lower surface of the substrate 1 by means of yellow light lithography. After the photoresist covers the substrate 1, exposure, development, etching, and film removal are performed. The uncovered area on the upper surface forms the pad pair 3 14 , the area below the pad pair and the uncovered lower surface of the substrate forms the electrode pair 3 16 , and the thermoelectric separation structure 11 is formed between the electrode pairs. A gold layer with a thickness of 50 μm was then electroplated on the substrate 1 to prevent copper oxidation.
在UVA芯片、UVC芯片、齐纳管与焊盘对,放入金锡共晶薄片焊料,在N2或Ar保护气氛中加热,使其熔融,然后施加压力,自然冷却,使UVA芯片、UVC芯片、齐纳管在基板上并联,UVA芯片为倒装UVA芯片15,UVC芯片为倒装UVC芯片7,齐纳管为倒装齐纳管8。In the pair of UVA chip, UVC chip, Zener tube and pad, put gold-tin eutectic sheet solder, heat it in N2 or Ar protective atmosphere to melt it, then apply pressure and cool it naturally to make the UVA chip, UVC The chip and the Zener are connected in parallel on the substrate, the UVA chip is a flip-chip UVA chip 15 , the UVC chip is a flip-chip UVC chip 7 , and the Zener is a flip-chip Zener 8 .
取矩形平面石英玻璃作为盖板9,在其下表面四周边缘溅镀厚度为200μm的牌号为4J34的第一金属层,第一金属层为可伐合金,在第一金属层上再电镀厚度为50μm金锡层作为第二金属层。其中,第一金属层为可伐合金4J34牌号,在0~300℃膨胀系数为(4.7~5.5)×10-6/K,石英玻璃膨胀系数0.55×10-6/K,金锡膨胀系数16×10-6/K,可伐合金的膨胀系数介于石英玻璃和金锡之间,用可伐合金作为连接石英玻璃和金的金属,可避免热应力问题。石英玻璃膨胀系数小,不易产生应力,使封装结构更稳定;石英玻璃透湿、透氧率极低,使封装结构气密性更好。Get the rectangular plane quartz glass as the cover plate 9, be the first metal layer of 4J34 with the trade mark of 200 μm in its lower surface surrounding edge sputtering thickness, the first metal layer is Kovar alloy, and the thickness of electroplating on the first metal layer is A 50 μm gold-tin layer was used as the second metal layer. Among them, the first metal layer is Kovar alloy 4J34, the expansion coefficient at 0 ~ 300 ℃ is (4.7 ~ 5.5) × 10 -6 /K, the expansion coefficient of quartz glass is 0.55 × 10 -6 /K, the expansion coefficient of gold tin is 16 ×10 -6 /K, the expansion coefficient of Kovar alloy is between quartz glass and gold-tin. Using Kovar alloy as the metal connecting quartz glass and gold can avoid thermal stress problems. Quartz glass has a small expansion coefficient and is not easy to generate stress, making the package structure more stable; quartz glass has extremely low moisture permeability and oxygen permeability, making the package structure more airtight.
本实施例UVA芯片、UVC芯片、齐纳管并联在同一焊盘对三14上,三者同开同关,可以起到稳压与防静电击穿的作用,保护UVC芯片和UVA芯片。UVA芯片发出的可见光可以起到提示作用,而且本实施例的封装结构同时具备紫外固化和空气净化功能。In this embodiment, the UVA chip, the UVC chip, and the zener are connected in parallel on the same pad pair 3 14, and the three are on the same switch, which can play the role of voltage regulation and anti-static breakdown, and protect the UVC chip and the UVA chip. The visible light emitted by the UVA chip can play a prompting role, and the package structure of this embodiment has both the functions of ultraviolet curing and air purification.
实施例3Example 3
如图7所示,基板1为氮化铝基片,进行前处理清洁,然后在氮化铝基片上以深反应性离子蚀刻方式钻2个通孔对,2个通孔对并列排布,利用溅镀的方式使导电金属充满通孔对,导电金属为铜,并在基片1上、下表面各形成厚度为650μm的导电金属层。As shown in FIG. 7 , the substrate 1 is an aluminum nitride substrate, which is cleaned by pre-treatment, and then two through-hole pairs are drilled on the aluminum nitride substrate by deep reactive ion etching, and the two through-hole pairs are arranged side by side. The through-hole pair is filled with conductive metal by sputtering, and the conductive metal is copper, and a conductive metal layer with a thickness of 650 μm is formed on the upper and lower surfaces of the substrate 1 respectively.
如图2所示,用黄光微影方式,设置光阻覆盖基板1的上表面和下表面,光阻覆盖基板1后进行曝光、显影、蚀刻、去膜。上表面未被覆盖的区域形成焊盘对一3和焊盘对二4,焊盘对一3下方、基板下表面未被覆盖的区域形成电极对一10,焊盘对二4下方、基板1下表面未被覆盖的区域形成电极对二12,电极对一10和电极对二12之间形成热电分离结构11。所述焊盘对一3与焊盘对二4的形状均为矩形。然后在基板上电镀厚度为10μm的金层,能有效防止铜氧化。其中,热电分离结构来增强芯片的散热,防止芯片因高温失效。As shown in FIG. 2 , a photoresist is arranged to cover the upper surface and the lower surface of the substrate 1 by means of yellow light lithography. After the photoresist covers the substrate 1 , exposure, development, etching, and film removal are performed. The uncovered area on the upper surface forms pad pair 1 3 and pad pair 2 4, the area below pad pair 1 3 and the uncovered area on the lower surface of the substrate forms electrode pair 1 10, below pad pair 2 4, substrate 1 The uncovered area of the lower surface forms the second electrode pair 12 , and the thermoelectric separation structure 11 is formed between the first electrode pair 10 and the second electrode pair 12 . The pad pair one 3 and the pad pair two 4 are both rectangular in shape. Then a gold layer with a thickness of 10 μm is electroplated on the substrate, which can effectively prevent copper oxidation. Among them, the thermoelectric separation structure enhances the heat dissipation of the chip and prevents the chip from failing due to high temperature.
使用点胶机将硅胶点在焊盘对二4中间的空白区,然后将UVA芯片压置于硅胶上,150℃条件下烘烤1小时,UVA芯片即可固定在基板1上。将导电线材6的一端与UVA芯片的电极相接,另一端与焊盘对二4相连接,采用超声波热压法将连接处固定。UVA芯片为正装UVA芯片15。以同样的方式在UVC芯片和齐纳管与焊盘对一3电性连接,UVC芯片为正装UVC芯片17,齐纳管为正装齐纳管18。Use a glue dispenser to spot the silica gel on the blank area in the middle of the pad pair 24, then press the UVA chip on the silica gel, bake it at 150°C for 1 hour, and the UVA chip can be fixed on the substrate 1. One end of the conductive wire 6 is connected to the electrode of the UVA chip, and the other end is connected to the pad pair 2 4 , and the connection is fixed by the ultrasonic hot pressing method. The UVA chip is the full UVA chip 15. In the same way, the UVC chip and the Zener tube are electrically connected to the pad pair-3. The UVC chip is the UVC chip 17 that is installed, and the Zener tube is the Zener tube 18 that is installed.
采用铜或铝制作金属框2,金属框2内侧于靠近上端面处设置凹槽,在金属框2外表面电镀厚度为10μm金锡层,将金属框2置于金属连接层13上,然后在低温高压设备内,加热最高温度300℃,热压40min~70min,使金属框2与基板1结合。The metal frame 2 is made of copper or aluminum. The inner side of the metal frame 2 is provided with a groove near the upper end face. The outer surface of the metal frame 2 is electroplated with a gold-tin layer with a thickness of 10 μm. In the low temperature and high pressure equipment, the maximum temperature of heating is 300° C., and the hot pressing is performed for 40 min to 70 min, so that the metal frame 2 is combined with the substrate 1 .
取矩形平面石英玻璃作为盖板9,在其下表面四周边缘溅镀厚度为50μm的牌号为4J36的第一金属层,第一金属层为可伐合金,在第一金属层上再电镀厚度为10μm金层作为第二金属层。盖板9的四周边缘嵌入金属框2的凹槽中,然后放置于热压设备内,加热最高温度300℃,加压40min~70min,使盖板9悬空于UVA芯片5、UVC芯片7和齐纳管8的上方,且盖板9上表面与金属框2上表面平齐。Get the rectangular plane quartz glass as the cover plate 9, be the first metal layer of 4J36 with the brand name of 50 μm in its lower surface surrounding edge sputtering thickness, the first metal layer is Kovar alloy, and the thickness of electroplating on the first metal layer is A 10 μm gold layer was used as the second metal layer. The surrounding edges of the cover plate 9 are embedded in the grooves of the metal frame 2, and then placed in the hot pressing equipment, heated to a maximum temperature of 300 ° C, and pressurized for 40min-70min, so that the cover plate 9 is suspended in the UVA chip 5, UVC chip 7 and homogeneous. Above the nanotube 8 , and the upper surface of the cover plate 9 is flush with the upper surface of the metal frame 2 .
本实施例中UVA芯片、UVC芯片和齐纳管均为正装芯片,可以节省生产成本。将齐纳管与UVC芯片并联固定在焊盘对一3上,可以起到稳压与防静电击穿的作用,保护UVC芯片。In this embodiment, the UVA chip, the UVC chip, and the zener are all positive-mounted chips, which can save production costs. Fixing the Zener tube and UVC chip in parallel on the pad pair one 3 can play the role of voltage regulation and anti-static breakdown, and protect the UVC chip.
与现有技术相比,本发明提供的UV LED的无机封装结构在使用时,既能发出波长为200nm~275nm的“短波紫外线”,还能够发出波长为320nm~400nm的“长波紫外线”,该封装结构发出的长波紫外线为可见波段,在使用时可以起到提示作用,让用户接收可见光信号,产生感性认识,同时也能增加封装灯珠的功效,使其能同时拥有杀菌、消毒功能和紫外固化、空气净化功能。Compared with the prior art, the inorganic encapsulation structure of the UV LED provided by the present invention can not only emit "short-wave ultraviolet rays" with a wavelength of 200 nm to 275 nm, but also can emit "long-wave ultraviolet rays" with a wavelength of 320 nm to 400 nm. The long-wave ultraviolet light emitted by the package structure is in the visible band, which can play a prompting role when using it, allowing users to receive visible light signals and generate perceptual knowledge. Curing, air purification function.
另外,本发明UV LED封装结构采用全无机封装方式,能有效解决紫外高能辐射产生的材料老化脆化,有机材料热膨胀系数大而产生的热应力,有机材料透湿透氧造成的湿应力及气密性差等问题,增强UV LED封装结构的稳定性,提高UV LED的工作寿命。In addition, the UV LED packaging structure of the present invention adopts an all-inorganic packaging method, which can effectively solve the aging and embrittlement of materials caused by ultraviolet high-energy radiation, the thermal stress caused by the large thermal expansion coefficient of organic materials, and the moisture and gas caused by moisture and oxygen permeability of organic materials. To solve problems such as poor density, enhance the stability of the UV LED packaging structure and improve the working life of the UV LED.
以上仅为本发明的若干个优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above are only several preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
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