CN219040507U - A multi-chip LED packaging structure - Google Patents
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 230000004308 accommodation Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 5
- 230000000149 penetrating effect Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 description 9
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本实用新型涉及LED封装结构技术领域,具体涉及一种多芯片LED封装结构。The utility model relates to the technical field of LED packaging structures, in particular to a multi-chip LED packaging structure.
背景技术Background technique
LED(Light Emitting Diode,半导体发光二极管)是一种常用的发光器件,通过电子与空穴复合释放能量发光,它在照明领域应用广泛。LED封装是指发光芯片的封装,其的功能在于提供芯片足够的保护,防止芯片在空气中长期暴露或机械损伤而失效,以提高芯片的稳定性。目前,为了符合终端产品的要求,要求LED封装轻、薄、短、小。但是目前市场上的单个LED封装的发光功率小,不满足客户的需求。LED (Light Emitting Diode, semiconductor light-emitting diode) is a commonly used light-emitting device, which releases energy and emits light through the recombination of electrons and holes. It is widely used in the field of lighting. LED packaging refers to the packaging of light-emitting chips. Its function is to provide sufficient protection for the chip to prevent the chip from failing due to long-term exposure in the air or mechanical damage, so as to improve the stability of the chip. At present, in order to meet the requirements of end products, LED packages are required to be light, thin, short and small. However, the luminous power of a single LED package currently on the market is small, which does not meet the needs of customers.
UVLED是指采用LED发光原理的紫外半导体光源,包括200nm~400nm之间的所有电磁辐射波长,根据其发光波长可进一步区分为UVA(320nm~400nm,长波紫外线)、UVB(280nm~315nm,中波紫外线)和UVC(200nm~280nm,短波紫外线)波段。UVC波段可用于杀菌消毒,UVA可实现光触媒,UVB可实现植物生长和医疗使用。目前市场上的单个LED封装的波段单一。UVLED refers to an ultraviolet semiconductor light source that adopts the principle of LED light emission, including all electromagnetic radiation wavelengths between 200nm and 400nm. Ultraviolet) and UVC (200nm ~ 280nm, short-wave ultraviolet) bands. UVC band can be used for sterilization and disinfection, UVA can realize photocatalyst, and UVB can realize plant growth and medical use. A single LED package currently on the market has a single wavelength band.
CN112089862A号专利公开了一种紫外半导体并联的UVC LED全无机或半无机封装结构,其包括基板、设置于所述基板上的至少两个UVC芯片,基板包括设置有UVC芯片的上表面和与上表面相对的下表面,上表面设置有与UVC芯片对应的焊盘对,每个UVC芯片设置于一对焊盘对之间并与其电性连接,UVC芯片之间相互并联。该专利中采用两个UVC芯片实现发光功率的增加,但是每个UVC芯片都需要一对焊盘对来连接,如果采用更多芯片时,那会增大整体封装的尺寸。Patent No. CN112089862A discloses a UVC LED all-inorganic or semi-inorganic package structure in parallel with ultraviolet semiconductors, which includes a substrate, at least two UVC chips arranged on the substrate, and the substrate includes an upper surface provided with a UVC chip and an upper surface connected with the upper surface. On the lower surface opposite to the surface, the upper surface is provided with a pair of pads corresponding to the UVC chips, each UVC chip is arranged between a pair of pads and electrically connected to it, and the UVC chips are connected in parallel with each other. In this patent, two UVC chips are used to increase the luminous power, but each UVC chip needs a pair of pads to connect, and if more chips are used, the size of the overall package will be increased.
因此,实有必要提供一种新的多芯片LED封装结构以解决上述技术问题。Therefore, it is necessary to provide a new multi-chip LED packaging structure to solve the above technical problems.
实用新型内容Utility model content
针对现有技术存在的不足,本实用新型的目的在于提供一种可提高发光功率且节省空间的多芯片LED封装结构。Aiming at the deficiencies in the prior art, the purpose of the utility model is to provide a multi-chip LED packaging structure that can increase luminous power and save space.
为实现上述目的,本实用新型提供了一种多芯片LED封装结构,其包括共同形成收容空间的基板、金属围坝边、玻璃以及收容于所述收容空间的芯片组,所述基板包括第一表面、第二表面以及贯穿所述基板的若干导电孔,所述第一表面具有间隔设置的若干电极部,所述第二表面具有与所述若干电极部对应的若干焊盘,所述若干电极部包括第一正极部、第一负极部、导电部,所述芯片组包括电连接所述第一正极部、所述导电部的第一LED芯片组,所述芯片组还包括电连接所述导电部、所述第一负极部的第二LED芯片组,所述第一LED芯片组与所述第二LED芯片组串联连接。In order to achieve the above object, the utility model provides a multi-chip LED packaging structure, which includes a substrate jointly forming a storage space, a metal dam side, glass and a chipset stored in the storage space, the substrate includes a first surface, a second surface, and several conductive holes penetrating through the substrate, the first surface has several electrode portions arranged at intervals, the second surface has several pads corresponding to the several electrode portions, and the several electrode portions The part includes a first positive part, a first negative part, and a conductive part. The chip set includes a first LED chip set electrically connected to the first positive part and the conductive part. The chip set also includes a first LED chip set electrically connected to the The conductive part, the second LED chip group of the first negative part, the first LED chip group and the second LED chip group are connected in series.
优选的,所述若干焊盘包括电连接所述第一正极部的第一焊盘、电连接所述第一负极部的第二焊盘。Preferably, the plurality of welding pads include a first welding pad electrically connected to the first positive pole part, and a second welding pad electrically connected to the first negative pole part.
优选的,所述芯片组还包括指示灯芯片,所述若干电极部还包括第二正极部、第二负极部,所述指示灯芯片的两极分别电连接所述第二正极部、所述第二负极部。Preferably, the chipset further includes an indicator chip, and the plurality of electrode parts further include a second positive part and a second negative part, and the two poles of the indicator chip are electrically connected to the second positive part and the second electrode respectively. Two negative parts.
优选的,所述若干焊盘还包括电连接所述第二正极部的第三焊盘、电连接所述第二负极部的第四焊盘。Preferably, the plurality of welding pads further include a third welding pad electrically connected to the second positive pole part, and a fourth welding pad electrically connected to the second negative pole part.
优选的,所述第一LED芯片组包括并联设置的第一LED芯片、第二LED芯片,所述第一LED芯片、所述第二LED芯片的正极电连接所述第一正极部,所述第一LED芯片、所述第二LED芯片的负极电连接所述导电部,所述第二LED芯片组包括并联设置的第三LED芯片、第四LED芯片,所述第三LED芯片、所述第四LED芯片的正极电连接所述导电部,所述第三LED芯片、所述第二LED芯片的负极电连接所述第一负极部。Preferably, the first LED chip group includes a first LED chip and a second LED chip arranged in parallel, the anodes of the first LED chip and the second LED chip are electrically connected to the first anode part, and the The negative poles of the first LED chip and the second LED chip are electrically connected to the conductive part, the second LED chip group includes a third LED chip and a fourth LED chip arranged in parallel, the third LED chip, the The positive electrode of the fourth LED chip is electrically connected to the conductive portion, and the negative electrodes of the third LED chip and the second LED chip are electrically connected to the first negative electrode portion.
优选的,所述芯片组还包括齐纳二极管,所述齐纳二极管的两极分别电连接所述第一正极部、所述第一负极部。Preferably, the chipset further includes a Zener diode, and the two poles of the Zener diode are respectively electrically connected to the first anode part and the first cathode part.
优选的,所述第一正极部包括沿第一方向延伸的第一区域、沿第二方向延伸的第二区域,所述第一方向与所述第二方向相垂直,所述第一负极部包括沿所述第一方向延伸的第三区域、沿所述第二方向延伸的第四区域,所述导电部沿所述第一方向延伸,所述第一区域与所述导电部相邻设置且形成第一间隔,所述第三区域与所述导电部相邻设置且形成第二间隔,所述第一区域与所述第四区域相邻设置且形成第三间隔,所述第一间隔、所述第二间隔、所述第三间隔相等。Preferably, the first positive portion includes a first region extending along a first direction, a second region extending along a second direction, the first direction is perpendicular to the second direction, and the first negative portion including a third area extending along the first direction and a fourth area extending along the second direction, the conductive portion extends along the first direction, and the first area is adjacent to the conductive portion and form a first interval, the third region is adjacent to the conductive portion and forms a second interval, the first region is adjacent to the fourth region and forms a third interval, the first interval , the second interval, and the third interval are equal.
优选的,所述第一LED芯片、所述第二LED芯片设置于所述第一间隔,所述第三LED芯片、所述第四LED芯片设置于所述第二间隔,所述齐纳二极管设置于所述第三间隔。Preferably, the first LED chip and the second LED chip are arranged in the first interval, the third LED chip and the fourth LED chip are arranged in the second interval, and the zener diode set in the third interval.
优选的,所述第一正极部包括沿第一方向延伸的第一区域、沿第二方向延伸的第二区域,所述第一方向与所述第二方向相垂直,所述第一负极部包括沿所述第一方向延伸的第三区域、沿所述第二方向延伸的第四区域,所述导电部沿所述第二方向延伸,所述第二区域与所述导电部相邻设置且形成第一间隔,所述第四区域与所述导电部相邻设置且形成第二间隔,所述第一区域与所述第三区域相邻设置且形成第三间隔,所述第一间隔、所述第二间隔、所述第三间隔相等。Preferably, the first positive portion includes a first region extending along a first direction, a second region extending along a second direction, the first direction is perpendicular to the second direction, and the first negative portion including a third area extending along the first direction, a fourth area extending along the second direction, the conductive portion extending along the second direction, and the second area is adjacent to the conductive portion and form a first interval, the fourth region is disposed adjacent to the conductive portion and forms a second interval, the first region is disposed adjacent to the third region and forms a third interval, the first interval , the second interval, and the third interval are equal.
优选的,所述第一LED芯片、所述第二LED芯片设置于所述第一间隔,所述第三LED芯片、所述第四LED芯片设置于所述第二间隔,所述齐纳二极管设置于所述第三间隔。Preferably, the first LED chip and the second LED chip are arranged in the first interval, the third LED chip and the fourth LED chip are arranged in the second interval, and the zener diode set in the third interval.
本实用新型通过第一正极部、第一负极部、导电部以及LED芯片共同形成串并联电路,从而实现了放大功率、混合波段的效果,相比传统产品,有效的节省空间、降低成本。The utility model forms a series-parallel circuit through the first positive part, the first negative part, the conductive part and the LED chip, thereby realizing the effects of amplifying power and mixing bands, and effectively saving space and reducing costs compared with traditional products.
附图说明Description of drawings
图1为本实用新型一种多芯片LED封装结构的实施例一的前视图;Fig. 1 is a front view of Embodiment 1 of a multi-chip LED packaging structure of the present invention;
图2为图1所示的后视图;Fig. 2 is the rear view shown in Fig. 1;
图3为图1所示沿A-A线的剖面图;Fig. 3 is a sectional view along line A-A shown in Fig. 1;
图4为本实用新型一种多芯片LED封装结构的实施例二的前视图。Fig. 4 is a front view of Embodiment 2 of a multi-chip LED packaging structure of the present invention.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.
实施例一Embodiment one
如图1至图3所示,本实用新型提供了一种多芯片LED封装结构100,其包括共同形成收容空间10的基板1、金属围坝边2、玻璃3,其还包括收容于收容空间10的芯片组4以及固定于基板1且暴露于外的若干焊盘5。As shown in Figures 1 to 3, the utility model provides a multi-chip
基板1为陶瓷基板,玻璃3为平面板状玻璃或半球形石英玻璃,但不限于此。The substrate 1 is a ceramic substrate, and the glass 3 is flat glass or hemispherical quartz glass, but not limited thereto.
基板1包括第一表面11、第二表面12、贯穿基板1的若干导电孔13,导电孔13中设有导电金属。The substrate 1 includes a first surface 11 , a
金属围坝边2设置于第一表面11。玻璃3靠近基板1一侧设置焊接层31,玻璃3与金属围坝边2之间通过焊接层31焊接固定。The metal dam edge 2 is disposed on the first surface 11 . A
第一表面11具有间隔设置的若干电极部6。The first surface 11 has
第二表面12包括散热区121、保护区122、与若干电极部6通过若干导电孔13实现导通的若干导电部123。焊盘5固定于相对应的若干导电部123,焊盘5通过若干导电部123、若干电极部6实现与芯片组4的电连接。The
散热区121为热电分离层,保护区122为绿油阻焊层。The
芯片组4固定于第一表面11,焊盘5固定于第二表面12。The chipset 4 is fixed on the first surface 11 , and the
若干电极部6包括第一正极部61、第一负极部62、导电部63。第一正极部61、第一负极部62分别设有两个导电孔13,导电孔13的数量不限定。The plurality of
芯片组4包括电连接第一正极部61、导电部63的第一LED芯片组41,芯片组4还包括电连接导电部63、第一负极部62的第二LED芯片组42,第一LED芯片组41与第二LED芯片组42之间串联连接。The chipset 4 includes a
焊盘5包括电连接第一正极部61的第一焊盘51、电连接第一负极部62的第二焊盘52。The
第一LED芯片组41包括至少一个LED芯片,第二LED芯片组42包括至少一个LED芯片。LED芯片为LED倒装芯片,例如,UVA/UVB/UVC中任意一种或多种的组合。The first
具体的,第一LED芯片组41包括第一LED芯片411、第二LED芯片412。第一LED芯片411、第二LED芯片412的正极电连接第一正极部61,第一LED芯片411、第二LED芯片412的负极电连接导电部63。在其它实施例中,第一LED芯片组41的数量、种类均不限定。Specifically, the first
具体的,第二LED芯片组42包括第三LED芯片421、第四LED芯片422。第三LED芯片421、第四LED芯片422的正极电连接导电部63,第三LED芯片421、第四LED芯片422的负极电连接第一负极部62。在其它实施例中,第二LED芯片组42的数量、种类均不限定。Specifically, the second
通过这样的设计,第一LED芯片组41、第二LED芯片组42形成了串并联电路,相较传统技术,可以在有限的空间内封装更多的芯片,提高了整体的功率。Through such a design, the
具体的,芯片组4还包括齐纳二极管45,齐纳二极管45的两极分别电连接第一正极部61、第一负极部62。齐纳二极管45起静电保护的作用。Specifically, the chipset 4 further includes a
具体的,芯片组4还包括指示灯芯片46,若干电极部6还包括第二正极部64、第二负极部65,指示灯芯片46的两极分别连接第二正极部64、第二负极部65。由于部分LED芯片工作时无法被人眼看见,因此可以通过指示灯芯片46来判断是否正常工作。Specifically, the chipset 4 also includes an
第二正极部64、第二负极部65上分别设有一个导电孔13,在其它实施例中,导电孔13的数量不限定。A
焊盘5还包括电连接第二正极部64的第三焊盘53、电连接第二负极部65的第四焊盘54。The
第一正极部61包括沿第一方向延伸的第一区域611、沿第二方向延伸的第二区域612。第一方向与第二方向相垂直。第一负极部62包括沿第一方向延伸的第三区域621、沿第二方向延伸的第四区域622。导电部63沿第一方向延伸。第一区域611与导电部63相邻设置且形成第一间隔71,第三区域621与导电部63相邻设置且形成第二间隔72,第一区域611与第四区域622相邻设置且形成第三间隔73。第一间隔71、第二间隔72、第三间隔73相等。The first
第一LED芯片411、第二LED芯片412设置于第一间隔71,第三LED芯片421、第四LED芯片422设置于第二间隔72,齐纳二极管45设置于第三间隔73。The
本实施例中,第一正极部61呈L型,第一负极部62呈L型,导电部63呈长方形。第一正极部61与第一负极部62大致呈对称设置且形成环形区域,导电部63位于环形区域的中心。第一正极部61、第一负极部62、导电部63、第二正极部64、第二负极部65共同形成一个正方形轮廓。但在其它实施例中,第一正极部61、第一负极部62、导电部63、第二正极部64、第二负极部65还可以共同形成圆形或椭圆形轮廓。In this embodiment, the first
本实用新型一种多芯片LED封装结构100的工作原理为:第一焊盘51连接电源正极,第二焊盘52分别电连接电源负极,输入电压,可实现第一LED芯片411、第二LED芯片412、第三LED芯片421、第四LED芯片422同时点亮,通过串并联电路实现了放大功率的效果,可通过采用不同种类的LED芯片来实现混合波段,例如UVA+UVB+UVC的混合波段,但不限于此。The working principle of a multi-chip
第三焊盘53连接电源正极,第四焊盘54连接电源负极,输入电压时,可令指示灯芯片46点亮。从而可以通过指示灯芯片46来判断LED芯片是否正常工作。The
因此,本实用新型的一种多芯片LED封装结构100通过串并联电路实现在一个封装中设置多个LED芯片,从而实现功率的放大以及多波段需求。Therefore, a multi-chip
综上,本实用新型一种多芯片LED封装结构100的有益效果为:其通过第一正极部、第一负极部、导电部以及若干LED芯片的配合形成串并联电路,实现了放大功率、混合波段的效果,相比传统产品,有效的节省空间、降低成本。To sum up, the beneficial effect of a multi-chip
实施例二Embodiment two
如图4所示,本实用新型提供了一种LED封装结构200,实施例二与实施例一的基板、金属围坝边、玻璃、焊盘结构相同,区别在于芯片组4、若干电极部8。As shown in Figure 4, the utility model provides an
若干电极部8包括第一正极部81、第一负极部82、导电部83。The plurality of electrode parts 8 include a first
芯片组4包括电连接第一正极部81、导电部83的第一LED芯片组41。芯片组4还包括电连接导电部83、第一负极部82的第二LED芯片组42,第一LED芯片组41与第二LED芯片组42之间串联连接。The chip set 4 includes a first LED chip set 41 electrically connected to the
第一LED芯片组41包括第一LED芯片411、第二LED芯片412,第二LED芯片组42包括第三LED芯片421、第四LED芯片422。The first
芯片组4还包括齐纳二极管45,齐纳二极管45的两极分别电连接第一正极部81、第一负极部82。The chipset 4 further includes a
第一正极部81包括沿第一方向延伸的第一区域811、沿第二方向延伸的第二区域812,第一方向与所述第二方向相垂直。第一负极部82包括沿第一方向延伸的第三区域821、沿第二方向延伸的第四区域822。导电部83沿第二方向延伸,第二区域812与导电部83相邻设置且形成第一间隔86,第四区域822与导电部83相邻设置且形成第二间隔87,第一区域811与第三区域821相邻设置且形成第三间隔88,第一间隔86、第二间隔87、第三间隔88相等。The
第一LED芯片411、第二LED芯片412设置于第一间隔86,第三LED芯片421、第四LED芯片422设置于第二间隔87,齐纳二极管45设置于第三间隔88。The
芯片组4还包括指示灯芯片46,若干电极部8还包括第二正极部84、第二负极部85,指示灯芯片46的两极分别连接第二正极部84、第二负极部85。The chipset 4 also includes an
本实用新型一种多芯片LED封装结构200的有益效果为:其通过第一正极部、第一负极部、导电部以及若干LED芯片的配合形成串并联电路,实现了放大功率、混合波段的效果,相比传统产品,有效的节省空间、降低成本。The beneficial effect of a multi-chip
最后应说明的是:以上实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不驱使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not drive the essence of the corresponding technical solutions away from the spirit and scope of the technical solutions of the various embodiments of the present application.
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