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CN108538824A - 半导体芯片的制造方法 - Google Patents

半导体芯片的制造方法 Download PDF

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Publication number
CN108538824A
CN108538824A CN201810171607.4A CN201810171607A CN108538824A CN 108538824 A CN108538824 A CN 108538824A CN 201810171607 A CN201810171607 A CN 201810171607A CN 108538824 A CN108538824 A CN 108538824A
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CN
China
Prior art keywords
microprotrusion
semiconductor chip
imparting
pressure member
pressure
Prior art date
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Granted
Application number
CN201810171607.4A
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English (en)
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CN108538824B (zh
Inventor
折笠诚
清家英之
堀川雄平
阿部寿之
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TDK Corp
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TDK Corp
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Publication of CN108538824A publication Critical patent/CN108538824A/zh
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Publication of CN108538824B publication Critical patent/CN108538824B/zh
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Abstract

本发明提供一种半导体芯片的制造方法，将具有基板、形成于基板上的导电部和形成于导电部的微凸起的半导体芯片层叠多片而得到半导体芯片。其中，具备在惰性气氛内使还原性气体流入配置有半导体芯片的空间内，并以微凸起的熔点以上的温度进行加热的加热工序，在加热工序中，在微凸起上载置有压力赋予部件。

Description

半导体芯片的制造方法
技术领域
本发明涉及半导体芯片的制造方法。
背景技术
一直以来，在半导体封装件的三维安装中，使用引线接合(wire bonding)进行半导体芯片和半导体芯片、或插入件的连接。替代该引线接合，开发了经由贯通电极和凸起将半导体芯片彼此连接的三维安装技术。贯通电极要求标准上为短的连接线长(例如50μm)，且将电极间相连的凸起也要求微细的凸起。与这种低于50μm的凸起间距相对应的技术被称作微凸起。如美国专利第9136159号说明书，通过将半导体芯片和半导体芯片用贯通电极和微凸起连接，能够极大地缩短半导体芯片间的配线长度。因此，能够降低伴随微细化而增大的配线延迟时间。
在此，微凸起的形成工艺可举出焊锡印刷法、焊锡球搭载、镀敷法等，但因有机物或水等在反应过程中产生的气体等而产生的空隙成为技术问题。因此，在专利第5807221号说明书中记载有，进行惰性气氛下的回流、氢或羧酸等还原性气氛中的回流。
发明内容
在此，当如微凸起那样凸起减小时，即使是微少的空隙(例如10μm以下)，也可能会导致连接不良或配线电阻的增加。但是，越是小的空隙，浮力越小，越难以排出，特别是势垒金属层和凸起的界面因热而形成合金层。因此，难以排出流动性低的合金层附近的空隙。
本发明的目的在于，提供一种能够容易地除去微凸起内的空隙的半导体芯片的制造方法。
本发明的一个方面提供一种半导体芯片的制造方法，该半导体芯片具有基板、形成于基板上的导电部和形成于导电部的微凸起，其中，具备在惰性气氛内使还原性气体流入配置有半导体芯片的空间，并以微凸起的熔点以上的温度进行加热的加热工序，在加热工序中，在微凸起上载置有压力赋予部件。
在该半导体芯片的制造方法中，在加热工序中，在惰性气氛内使还原性气体流入配置有半导体芯片的空间进行加热。由此，将形成于微凸起的表面的氧化膜还原并除去。另外，在加热工序中，通过以微凸起的熔点以上的温度进行加热，微凸起熔融而具有流动性。在此，在加热工序中，在微凸起上载置有压力赋予部件。因此，伴随微凸起熔融而具有流动性，通过压力赋予部件的压力，微凸起以压溃的方式变形。通过该变形，在微凸起内产生流动，空隙在微凸起内流动。由此，在微凸起内流动的空隙被从该微凸起内排出到外部。如上，能够容易地除去微凸起内的空隙。
作为还原性气体，也可以应用羧酸。由此，能够良好地除去微凸起表面的氧化膜。
就压力赋予部件的重量而言，也可以是微凸起的每单位截面积为0.0005μg/μm2以上且0.1μg/μm2以下。由此，压力赋予部件能够对微凸起赋予用于除去空隙的适宜的压力。
也可以是，在基板上配置具有一定厚度的衬垫，压力赋予部件被压入至与衬垫接触。由此，因为利用衬垫止挡压力赋予部件，所以能够防止微凸起被过量压溃。
根据本发明，能够提供可容易地除去微凸起内的空隙的半导体芯片的制造方法。
附图说明
图1是表示包含半导体芯片的半导体封装件的一个实施方式的概略截面图。
图2是表示包含半导体芯片的半导体封装件的制造方法的步骤的流程图。
图3A及图3B是表示叠层有半导体芯片的情况的概略截面图。
图4A是表示叠层有半导体芯片的情况的概略截面图，图4B是表示将半导体芯片彼此接合的情况的概略截面图。
图5是表示实行平滑面形成工序之前的微凸起、及实行平滑面形成工序之后的微凸起的概略截面图。
图6是表示平滑面形成工序(空隙除去工序)的步骤的流程图。
图7A～图7G是表示平滑面形成工序(空隙除去工序)的步骤的概略截面图。
图8A～图8G是表示变形例的平滑面形成工序(空隙除去工序)的步骤的概略截面图。
图9是表示加热炉内的温度和压力的曲线图的图表。
图10是表示实施例及比较例的试验结果的表。
符号说明
1……半导体芯片、2……叠层体、11……基板、12……导电部、13……微凸起、13a……平滑面、21……压力赋予部件、22……空隙、23……氧化膜、26……衬垫。
具体实施方式
以下，参照附图详细说明本发明的一个方面的半导体芯片的制造方法的优选实施方式。此外，在以下的说明中，对同一要素或具有同一功能的要素使用同一符号，并省略重复的说明。
图1是表示包含半导体芯片的半导体封装件的一个实施方式的概略截面图。如图1所示，半导体封装件100具备将三片以上(在此为三片)的半导体芯片1叠层而构成的叠层体2、经由焊锡球3与叠层体2电连接的有机基板4、通过由模制树脂覆盖安装于有机基板4上的叠层体2而形成的模制部6。此外，模制部6的内部空间以填埋叠层体2的半导体芯片1之间的方式被充填底有部填充材料7。在本实施方式中，叠层体2通过将半导体芯片1A、半导体芯片1B、及半导体芯片1C在上下方向上叠层而构成。半导体芯片1A和半导体芯片1B经由通过使微凸起熔融而接合的接合部8进行接合。半导体芯片1C和半导体芯片1B经由通过使微凸起熔融而接合的接合部8进行接合。
例如，如图4A所示，接合前的半导体芯片1具有基板11、形成于基板11上的导电部12、形成于导电部12的微凸起13。基板11由例如硅(Si)芯片等半导体芯片、硅(Si)插入件等构成。此外，在半导体芯片1A及半导体芯片1C上，仅在一主面上形成有导电部12。在半导体芯片1B上，在两个主面上形成有导电部12。另外，形成于半导体芯片1B的两个主面上的导电部12经由沿基板11的厚度方向延伸的通孔电极19相互连接。
导电部12在基板11的主面上形成有多个。导电部12以规定的间距在基板11的主面上排列。导电部12具备形成于基板11的主面上的电极焊盘14、和形成于电极焊盘14的上表面的势垒金属层16。此外，基板11的主面中、未形成导电部12的部分由绝缘层17覆盖(参照图5)。作为势垒金属层16的构成材料，可使用例如Ni及Ni化合物(例如NiP)等。作为绝缘层17的构成材料，可使用例如SiO、SiN、聚酰亚胺等。
微凸起13形成于导电部12的势垒金属层16上。微凸起13可以含有Sn、Ag、Cu、Ag-Cu、Bi、In等作为构成材料，也可以使用这些中的任意两个以上的材料得到的合金。特别是，微凸起13也可以含有Sn作为主成分。微凸起13例如也可以通过镀敷法来形成。或者，微凸起13可以通过使用由焊锡合金构成的微小球而形成，也可以印刷膏体而形成。此外，将从上观察时的直径小于50μm的凸起称作微凸起。
如图5所示，微凸起13在刚刚形成于基板11上之后具有球面。通过对这种微凸起13实施规定的处理，从而在微凸起13上形成平滑面13a。平滑面13a由在微凸起13的上端部沿水平方向扩展的平面构成。此外，后面会叙述作为用于形成平滑面13a的处理内容的一例。微凸起13的高度、即平滑面13a和导电部12的上表面之间的尺寸可以在5～50μm的范围内设定。
接着，参照图2～图9说明本实施方式的包含半导体芯片1的半导体封装件100的制造方法。
如图2所示，首先，实行通过在基板11上形成微凸起13而准备半导体芯片1的半导体芯片准备工序(步骤S1)。由此，准备半导体芯片1A、1B、1C。但是，在该阶段，在微凸起13上未形成平滑面13a。
接下来，实行在微凸起13上形成平滑面13a的平滑面形成工序(步骤S2)。另外，平滑面形成工序S2也相当于从微凸起13的内部除去空隙22的空隙除去工序。
在此，参照图6说明平滑面形成工序(空隙除去工序)S2的详细的内容。
如图6及图7A所示，实行相对于微凸起13设置压力赋予部件21的压力赋予部件设置工序(步骤S20)。这样，在载置了压力赋予部件21的状态下，将半导体芯片1配置到加热炉的内部。此外，在以后的说明中，适宜参照图9所示的加热炉内的温度和压力的曲线图进行说明。此外，在图9中，实线表示加热炉内的温度，虚线表示加热炉内的压力。
作为载置于微凸起13上的压力赋予部件21的构成材料，优选采用不与微凸起13发生反应的材料。例如，作为压力赋予部件21的构成材料，可采用Si、SiO2、SiN等。另外，压力赋予部件21的主面中、与微凸起13相接的主面21a优选作为平面构成。例如，在主面21a上形成有突起等的情况下，因为与微凸起13钩挂，所以在除去压力赋予部件21时不易脱落。压力赋予部件21对微凸起13赋予的压力优选仅为压力赋予部件21自身的自重。具体而言，压力优选为每单位微凸起的截面积为0.0005μg/μm2以上且0.1μg/μm2以下。例如，如果通过倒装片安装那样的方法来控制压力赋予部件21产生的压力、或高度，则在微凸起13从固体向液体变化时(从图7B向图7C变化时)作用于压力赋予部件21的压力降低，因此，在压力赋予部件21的位置产生错位。会对如微凸起13那样小的凸起以极小的错位过剩地作用压力。
接下来，实行将配置了半导体芯片1的加热炉的空间减压的减压工序(步骤S21)。在减压工序S21中，将加热炉内抽真空，形成减压气氛。残留于加热炉内的氧成为使微凸起13氧化的原因。因此，优选将加热炉内排气至大气压状态(1.01×105Pa～1×103Pa以下，特别是5Pa以下)的减压状态。由此，加热炉内的压力降低(参照图9的图表P1的部分)。向这种减压气氛的加热炉内导入惰性气体。由此，加热炉内的压力上升(参照图9的图表P2的部分)。惰性气体在使加热炉内上升至微凸起13的熔融温度以上(熔点以上)的温度域时，防止微凸起13表面的进一步的氧化，并实现微凸起13的熔融，作为加热炉内的热媒介起作用。作为这种惰性气体，可以使用例如氮(N2)气或氩(Ar)气等。
接下来，实行在惰性气氛内对加热炉流入还原性气体，并以微凸起13的熔点以上的温度加热的加热工序(步骤S22)。加热工序S22是在向加热炉内导入了惰性气体之后、或者与导入惰性气体大致同时实行。在加热工序S22中，以规定的升温速度(例如35～45℃/分钟)将加热炉内升温，使导入了惰性气体的状态的加热炉内的温度上升至微凸起13的熔点以上的温度域。例如，在由Sn-Ag-Cu合金构成凸起的情况下，熔点虽然根据合金的组成而不同，但大致为220～230℃，因此，使加热炉内的温度上升至这种温度以上的温度域。
还原性气体的导入优选在氧化膜23开始还原反应的温度的前后实施。一边将加热炉内的温度(图9的温度T1)维持在开始还原反应的温度以上，一边继续供给适宜的温度和流量的还原性气体。由此，能够将存在于微凸起13的表面的氧化膜23还原除去。作为还原性气体，例如可以应用羧酸(甲酸)。作为羧酸的例子，可举出甲酸、乙酸、丙烯酸、丙酸等低级羧酸。在使用甲酸作为还原气体的情况下，优选在加热炉内的温度成为110℃左右时导入甲酸。即使在开始还原反应的温度以下导入甲酸，反应也不进行，而如果温度过高，由于是在残留着表面的氧化膜23的状态下加热微凸起13，因此，空隙22内部的压力上升。当在空隙22的内部的压力过量提高的状态下除去氧化膜23时，空隙22的压力被一次性释放，液化了的微凸起13也可能会飞散。因此，也可以在开始还原反应的温度T1下维持规定时间，在氧化膜23被充分除去的阶段将加热炉的温度维持在微凸起13的熔点以上的温度T2(参照图9)。
一旦微凸起13熔融，空隙22被除去，并形成了平滑面13a，则实行将加热炉的温度降温的降温工序(步骤S23)。具体而言，在被维持在微凸起13的熔融温度以上的温度T2的加热炉内将微凸起13暴露在甲酸中规定时间(例如0.5～3分钟)后，将导入到加热炉内的甲酸抽真空排出。在将加热炉内的甲酸排气后、或者进行甲酸的排气的同时，以规定的降温速度(例如-5～-40℃/分钟)将加热炉内降温。此外，图9中，在加热炉的温度下降之前进行抽真空。但是，即使加热炉内的温度降温至熔融的凸起以某种程度固化的温度域，也可以向加热炉内导入氮气或氩气等惰性气体而恢复至大气压。
通过实行上述那样的加热工序S22及降温工序S23，如图7B～图7G所示，能从微凸起13中除去空隙22，并在微凸起13上形成平滑面13a。即，通过在还原性气体的气氛内进行加热，从而可将形成于微凸起13的表面的氧化膜23还原而除去(参照图7B)。而且，通过以微凸起13的熔点以上的温度进行加热，微凸起13会熔融。由此，通过压力赋予部件21的压力，微凸起13以压溃的方式变形。由此，根据压力赋予部件21的主面21a的形状，在微凸起13形成与平滑面13a相对应的形状(参照图7C～图7F)。另外，通过将熔融的微凸起13向压力赋予部件21按压而流动，从而微凸起13内的空隙22上升，被排出到外部(参照图7C～图7F)。通过加热炉的温度恢复，微凸起13被冷却而固化。由此，在微凸起13上形成平滑面13a(参照图7G)。
返回图2，对于各半导体芯片1的平滑面形成工序S2结束后，实行在一个半导体芯片1的微凸起13上重叠另一个半导体芯片1的微凸起13，由此能够实行叠层三片以上的半导体芯片1的叠层工序(步骤S3)。在本实施方式中，在叠层工序S3中，在一个半导体芯片1和另一个半导体芯片1的微凸起13上形成有平滑面13a。而且，一个半导体芯片1的微凸起13以平滑面13a与另一微凸起13相接触。在叠层工序S3中，对于所有的半导体芯片1，以彼此的微凸起13不接合的状态进行重合。
具体而言，如图3A及图3B所示，在最下的半导体芯片1C的微凸起13上重叠半导体芯片1B的微凸起13。此时，在半导体芯片1C的微凸起13的平滑面13a上载置半导体芯片1B的微凸起13的平滑面13a。另外，半导体芯片1C的微凸起13和半导体芯片1B的微凸起13为彼此不接合而只是简单接触的状态。
接下来，如图3B及图4A所示，在从下数第二个半导体芯片1B的微凸起13上重叠最上的半导体芯片1C的微凸起13。此时，在半导体芯片1B的微凸起13的平滑面13a上载置半导体芯片1C的微凸起13的平滑面13a。另外，半导体芯片1B的微凸起13和半导体芯片1C的微凸起13为彼此不接合而只是简单接触的状态。
叠层工序S3结束后，实行通过加热微凸起13使其熔融，经由该微凸起13将半导体芯片1彼此接合的接合工序(步骤S4)。在接合工序S4中，通过一次的加热将所有的微凸起13一并熔融，将所有的半导体芯片1一并接合。另外，在接合工序S4中，在还原气氛内使各半导体芯片1的微凸起13熔融。
具体而言，如图4A所示，将经由微凸起13叠层了半导体芯片1A、1B、1C的状态的叠层体配置于加热炉内。然后，通过用加热炉加热该叠层体，叠层体内的所有的微凸起13熔融，并且彼此接触的微凸起13被一并接合。由此，如图4B所示，半导体芯片1A、1B、1C经由两个微凸起13熔融而相互结合的接合部8接合。
在接合工序S4结束后，实行制作半导体封装件100的半导体封装件制作工序(步骤S5)。在半导体封装件制作工序S5中，将在接合工序S5得到的叠层体2与有机基板4连接，同时，由模制部6覆盖叠层体2。如上，完成半导体封装件100，图2所示的制造方法结束。
接着，对本实施方式的半导体芯片1的制造方法的作用及效果进行说明。
在半导体芯片1的制造方法中，在加热工序S22中，在惰性气氛内使还原性气体流入配置有半导体芯片1的空间而进行加热。由此，形成于微凸起13的表面的氧化膜23被还原而除去。另外，通过以微凸起13的熔点以上的温度进行加热，微凸起13熔融，由此具有流动性。在此，在加热工序S22中，在微凸起13上载置压力赋予部件21。因此，伴随微凸起13熔融而具有流动性，微凸起13因压力赋予部件21的压力而以压溃的方式变形。通过该变形，在微凸起13内产生流动，空隙22在微凸起13内流动。由此，在微凸起13内流动的空隙22从该微凸起13内排出到外部而被除去。如上，能够容易地除去微凸起13内的空隙22。
作为还原性气体，也可以应用羧酸。由此，能够良好地除去微凸起13表面的氧化膜23。
就压力赋予部件21的重量而言，在微凸起13的每单位截面积，也可以为0.0005μg/μm2以上且0.1μg/μm2以下。由此，压力赋予部件21能够对微凸起13赋予用于除去空隙22的适宜的压力。
在半导体封装件100的制造方法中，在叠层工序S3中，在一个半导体芯片1和另一个半导体芯片1中的至少一个微凸起13上形成平滑面13a，一个微凸起13以平滑面13a与另一个微凸起13接触。这样，通过利用平滑面13a使相互的微凸起13重合，从而能够将一个半导体芯片1和另一个半导体芯片1位置精度高地叠层。由此，即使在将三片以上的多个半导体芯片1叠层的情况下，也能够以相互的半导体芯片1之间的位置精度高的状态进行叠层。通过在这样的状态下实行接合工序S4，能够将半导体芯片1和半导体芯片1位置精度高地接合。
在叠层工序S3中，对于所有的半导体芯片1，将相互的微凸起13以不接合的状态重合，在接合工序S4中，也可以通过一次的加热使所有的微凸起13一并熔融，将所有的半导体芯片1一并接合。由此，能够防止微凸起13一次熔融而接合的接合部8被重复加热。因此，能够防止接合部8的强度降低。
一个半导体芯片1的微凸起13、及另一个半导体芯片1的微凸起13均含有Sn，在接合工序S4中，也可以在还原气氛内使一个半导体芯片1的微凸起13、及另一个半导体芯片1的微凸起13熔融。由此，形成于相互的微凸起13的表面的氧化膜23被还原而除去。另外，因为相互的微凸起13含有Sn，所以伴随熔融而相互混合并一体化。随之，通过液化的微凸起13的表面张力的作用，修正一个半导体芯片1和另一个半导体芯片1之间的错位(自调整效果)。
平滑面形成工序S2具备在惰性气氛内使还原性气体流入配置有半导体芯片1的空间，并通过以微凸起13的熔点以上的温度进行加热而除去微凸起13的表面的氧化膜23的加热工序S22，在加热工序S22中，也可以在微凸起13上载置压力赋予部件21。在加热工序S22中，通过在惰性气氛内使还原性气体流入配置有半导体芯片1的空间，以微凸起13的熔点以上的温度进行加热，从而除去了微凸起13的表面的氧化膜23。由此，在形成于微凸起13的表面的氧化膜23被还原而被除去的同时，该微凸起13熔融，从而具有流动性。在此，在加热工序S22中，在微凸起13上载置有压力赋予部件21。因此，伴随微凸起13熔融而具有流动性，微凸起13因压力赋予部件21的压力而以压溃的方式变形。通过该变形，在微凸起13内产生流动，空隙22在微凸起13内流动。由此，在微凸起13内流动的空隙22从该微凸起13内排出到外部而被除去。进一步，熔融的微凸起13内、被压力赋予部件21按压的部分伴随该压力赋予部件21的形状而作为平滑面13a形成。
本发明不限于上述的实施方式。
例如，如图8所示，在基板11上配置具有一定厚度的衬垫26，压力赋予部件21也可以被压入至与衬垫26接触。由此，因为通过衬垫26止挡压力赋予部件21，所以能够防止微凸起13过度压溃。例如，在加热前，在微凸起13的两侧配置衬垫26，在微凸起13上载置压力赋予部件21(参照图8A)。在该状态下用还原气氛加热，除去氧化膜(参照图8B)。而且，当使微凸起13熔融时，压力赋予部件21下降，与衬垫26的上表面接触(参照图8C)。由此，压力赋予部件21被衬垫26支撑，不会进一步下降。另一方面，在熔融的微凸起13内，因压力赋予部件21的影响而产生流动，空隙22上升而被除去(参照图8D～图8G)。
另外，在上述的实施方式中，下侧的半导体芯片1的微凸起13具有平滑面13a，上侧的半导体芯片1的微凸起13具有平滑面13a。因此，在下侧的微凸起13的平滑面13a上载置上侧的微凸起13的平滑面13a。但是，也可以仅在上侧的微凸起13和下侧的微凸起13的任一方形成平滑面13a，而在另一方不形成平滑面13a。
此外，半导体芯片1的叠层片数没有特别限定，也可以为两片。
另外，只要使用压力赋予部件21从微凸起13排出空隙22即可。即，在压力赋予部件21的形状上，也可以不在微凸起13上形成平滑面13a。
此外，作为半导体芯片1的使用例，示例了叠层有半导体芯片1的半导体封装件100。但是，成为半导体芯片1的接合对象的对方部件没有特别限定。
[实施例]
接下来，对本发明的实施例进行说明。但是，本发明不限于以下的实施例。
(实施例1～7)
作为实施例1，制造了具有如下微凸起的半导体芯片。首先，通过电解镀敷法对基板进行了镀Cu、镀Ni、及镀Sn。将其配置于加热炉内之后，调整加热炉内的气氛压，调整向加热炉供给的氮或甲酸气的浓度及流量。由此，镀膜熔融，并制作了形成有微凸起的半导体芯片的样品。镀Cu层的高度为17μm，镀Ni层的高度为3μm，微凸起的高度为15μm，微凸起的直径为35μm。利用透射X射线观察该样品，结果在微凸起内观察到空隙。准备该样品和压力赋予部件。压力赋予部件是具有SiO2膜的Si晶片。以SiO2面与凸起相接的方式将Si晶片载置于微凸起上。就压力赋予部件的重量而言，每单位微凸起的截面积为0.0005μg/μm2。此外，未设置图8所示的那种衬垫。在将载置有压力赋予部件的状态的半导体芯片配置于加热炉内后，将加热炉内抽真空至5Pa以下。调整之后的加热炉内的气氛压，调整向加热炉供给的氮或甲酸气的浓度及流量。具体而言，以升温速度45℃/min、预热195℃(6分钟)、最大260℃(1分钟)这样条件进行加热。微凸起对压力赋予部件赋予压力，形成了平滑面。这样，得到了实施例1的微凸起。
将使用每单位微凸起的截面积为0.002μg/μm2的压力赋予部件形成的微凸起作为实施例2。将使用每单位微凸起的截面积为0.003μg/μm2的压力赋予部件形成的微凸起作为实施例3。将使用每单位微凸起的截面积为0.01μg/μm2的压力赋予部件而形成的微凸起作为实施例4。将使用每单位微凸起的截面积为0.03μg/μm2的压力赋予部件形成的微凸起作为实施例5。将使用每单位微凸起的截面积为0.06μg/μm2的压力赋予部件形成的微凸起作为实施例6。实施例2～6的其它条件与实施例1完全相同。另外，以将30μm的SUS316制衬垫插入压力赋予部件和基板之间而形成的微凸起作为实施例7。在实施例7中，使用了每单位微凸起的截面积为0.03μg/μm2的压力赋予部件。实施例7的其它条件与实施例1完全相同。
(比较例1～7)
通过在大气中进行加热，形成比较例1～7的微凸起。在比较例1中，使用每单位微凸起的截面积为0.001μg/μm2的压力赋予部件。在比较例2中，使用每单位微凸起的截面积为0.002μg/μm2的压力赋予部件。在比较例3中，使用每单位微凸起的截面积为0.003μg/μm2的压力赋予部件。在比较例4中，使用每单位微凸起的截面积为0.010μg/μm2的压力赋予部件。在比较例5中，使用每单位微凸起的截面积为0.03μg/μm2的压力赋予部件。在比较例6中，使用每单位微凸起的截面积为0.06g/μm2的压力赋予部件。在比较例7中，使用每单位微凸起的截面积为0.10μg/μm2的压力赋予部件。比较例1～7的其它条件与实施例1完全相同。
(评价)
将各实施例及各比较例的微凸起的高度示于图10的“微凸起高度(μm)”。另外，针对各实施例及各比较例中、回流后空隙减少的情况，在图10的“空隙”上表示“○”，对于空隙未减少的情况，在图10的“空隙”上表示“×”。对于各实施例及各比较例中、回流后将压力赋予部件从微凸起卸下，微凸起不倾倒的情况，在图10的“电极的倾倒”上表示“○”，对于微凸起倾倒的情况，在图10的“电极的倾倒”上表示“×”。
如图10所示，在实施例1～6中，确认空隙减少的效果，且微凸起也未倾倒。但是，在实施例6中，因为熔融的Sn流入电极焊盘，所以设为“Δ”。在实施例7中，通过加入衬垫，凸起的高度与衬垫的厚度相同，因此，具有防止被过剩地按压的效果。因此，实施例7与实施例6相比，能够确认熔融的Sn流入到电极焊盘。另一方面，在比较例1～6中，确认到不能得到空隙減少的效果。这推测是因为，由于微凸起的表面的形成的氧化膜的影响，微凸起不易变形、以及表面硬的氧化膜阻碍内部的流动性。另外，在比较例7中，由于压力赋予部件的重量过剩，从而确认到微凸起的倾倒。

Claims (4)

1.一种半导体芯片的制造方法，其中，
所述半导体芯片将具有基板、形成于所述基板上的导电部和形成于所述导电部的微凸起，
所述半导体芯片的制造方法具备加热工序：对配置有所述半导体芯片的空间在惰性气氛内使还原性气体流入，并以所述微凸起的熔点以上的温度进行加热，
在所述加热工序中，在所述微凸起上载置有压力赋予部件。
2.根据权利要求1所述的半导体芯片的制造方法，其中，
作为所述还原性气体，应用羧酸。
3.根据权利要求1所述的半导体芯片的制造方法，其中，
所述压力赋予部件的重量为，每单位所述微凸起的截面积为0.0005μg/μm2以上且0.1μg/μm2以下。
4.根据权利要求1所述的半导体芯片的制造方法，其中，
在所述基板上配置具有一定厚度的衬垫，所述压力赋予部件被压入至与所述衬垫接触。
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