CN105789473B - Flexible substrate and preparation method thereof - Google Patents
Flexible substrate and preparation method thereof Download PDFInfo
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- CN105789473B CN105789473B CN201410809460.9A CN201410809460A CN105789473B CN 105789473 B CN105789473 B CN 105789473B CN 201410809460 A CN201410809460 A CN 201410809460A CN 105789473 B CN105789473 B CN 105789473B
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- protective layer
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- 239000010410 layer Substances 0.000 claims description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 58
- 239000011241 protective layer Substances 0.000 claims description 57
- 229920000642 polymer Polymers 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000231 atomic layer deposition Methods 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000004816 latex Substances 0.000 claims description 6
- 229920000126 latex Polymers 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229920006393 polyether sulfone Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 235000018927 edible plant Nutrition 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 125000005487 naphthalate group Chemical group 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011888 foil Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003208 poly(ethylene sulfide) Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012716 precipitator Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
The present invention relates to a kind of flexible substrates and preparation method thereof, and wherein flexible substrate includes the first polymer layer stacked gradually, the first silicon protective layer, atomic layer deposition film, the second silicon protective layer and the second polymer layer.In above-mentioned flexible substrate and preparation method thereof, alumina atom layer deposition film is set between two layers of polymers layer, alumina atom layer deposition film has good compactness, therefore flexible substrate has good waterproof/oxygen permeability, therefore more barrier layer need not be set, thickness is small, good toughness.
Description
Technical field
The present invention relates to display production fields, more particularly to a kind of flexible substrate and preparation method thereof.
Background technology
The currently used flexible substrate applied to flexible organic electroluminescent device is mainly polymer substrate, such as
The polymer such as PC, PI, PET, PES, since the structure of polymer substrate itself determines that its water oxygen permeability is bigger, usually in the industry
Common method is that more barrier layers are plated on PI substrates to stop the immersion of water oxygen.However plane SH wave structural manufacturing process is multiple
It is miscellaneous, can all there be certain influence to the optically and mechanically performance of display device, and the elasticity of inorganic barrier layer is low, be unfavorable for point
Dissipate mechanical stress, however it remains larger cracking risk, water oxygen is easily penetrated into.
A kind of technical solution of solution is at present：Add last layer metal between the first polymer layer and the second polymer layer
Paillon.The defect of the program is：Add last layer metal foil between two layers of polymers, there are between polymer and metal foil
Adhesion problem and generated during cutting metal foil surface irregularity and metal fragment the phenomenon that, it is main former
Cause is what the structure that metal foil itself has and property were determined.
Invention content
Based on this, it is necessary to provide a kind of flexible substrate with excellent toughness and waterproof/oxygen permeability.
A kind of flexible substrate, including stack gradually the first polymer layer, the first silicon protective layer, atomic layer deposition film,
Two silicon protective layers and the second polymer layer.
The first polymer layer and the second polymer layer are polyimide layer, poly- carbonic acid in one of the embodiments,
Ester layer, polyethylene terephthalate layer, poly- bitter edible plant naphthalate layer or polyethersulfon layer.
The thickness of the atomic layer deposition film is 0.5~1 μm in one of the embodiments, the first polymer layer
Thickness with the second polymer layer is 5~10 μm, and the thickness of the first silicon protective layer and the second silicon protective layer is 0.5~1 μm.
The first silicon protective layer and the second silicon protective layer are silicon nitride or silica in one of the embodiments,
Layer.
The atomic layer deposition film is alumina atom layer deposition film in one of the embodiments,.
A kind of preparation method of flexible substrate is also provided, is included the following steps：
First silicon protective layer is provided in the first polymer layer of offer；
The second silicon protective layer is formed on atomic layer deposition film；
The second polymer layer is formed on the second silicon protective layer；
Wherein atomic layer deposition film fits with the second silicon protective layer in one of the embodiments,.
In one of the embodiments, the first silicon protective layer and the second silicon protective layer using chemical vapour deposition technique or
Plasma enhanced chemical vapor deposition method is formed.
The first silicon protective layer and the second silicon protective layer are silicon nitride or silica in one of the embodiments,
Layer.
It is described in one of the embodiments, to include the step of forming the second polymer layer on the second silicon protective layer：It will
Polymer latex is coated on the second silicon protective layer；Baking, the evaporation of the solvent in polymer latex is fallen and forms the second polymerization
Nitride layer.
The preparation method of the flexible substrate further includes being arranged on the second polymer layer in one of the embodiments,
The step of buffer layer.
In above-mentioned flexible substrate and preparation method thereof, alumina atom layer deposition film is set between two layers of polymers layer,
Alumina atom layer deposition film has good compactness, therefore flexible substrate has good waterproof/oxygen permeability, therefore
More barrier layer need not be set, and thickness is small, good toughness.
Description of the drawings
Fig. 1 is the constructed profile of flexible substrate；
Fig. 2 is the flow chart of the preparation method of flexible substrate.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give the preferred embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.Keep the understanding to the disclosure more saturating on the contrary, purpose of providing these embodiments is
It is thorough comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.On the contrary, when element is referred to as " directly existing " another element "upper",
There is no intermediary elements.Term as used herein " vertically ", " horizontal ", "left", "right" and similar statement are
For illustrative purposes.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the Listed Items of pass.
Specific embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawings.
Referring to FIG. 1, the present invention provides a kind of flexible substrate, including the first polymer layer 110, setting in first polymer
Layer 110 on the first silicon protective layer 120, be arranged on the first silicon protective layer 120 atomic layer deposition film 130, be arranged in atom
The second silicon protective layer 140 in layer deposition film 130, and the second polymer layer 150 that is arranged on the second silicon protective layer 140.It changes
Yan Zhi, the first polymer layer 110, the first silicon protective layer 120, atomic layer deposition film 130, the second silicon protective layer 140 and second are poly-
Nitride layer 150 is closed to be cascading.
The first polymer layer 110 and the material of the second polymer layer 150 can be identical or different, can be polyimides
Layer, Polycarbonate Layer, polyethylene terephthalate layer, poly- bitter edible plant naphthalate layer or polyethersulfon layer.First polymerization
The thickness range of nitride layer 110 and the second polymer layer 150 is 5~10 μm.
First silicon protective layer 120 and the second silicon protective layer 140 are silicon nitride or silicon dioxide layer, their thickness range is
0.5~1 μm.
Flexible substrate is provided with atomic layer deposition film 130 between two layers of polymers layer, and wherein atomic layer deposition film 130 is
Using atomic layer deposition (ALD：Atomic Layer Deposition) technology formation.
ALD technique be by substance with monatomic form membrane being plated on substrate in layer, since it can be with atomic film
Form be plated on substrate, it is ensured that the film layer being plated to by ALD technique has high compactness, can well every
External world's steam and oxygen absolutely penetrates polymeric layer.So that OLED device has high water resistance and corrosion resistance.
Referring to FIG. 1, in the present invention, the first polymer layer 110 is first placed on support (to use PI, for polyimides)
On glass substrate 210, then precipitation forms the first silicon protective layer 120 (to use SiO2For), then use ALD technique
By aluminium oxide (Al2O3) formation alumina atom layer deposition film be plated on the first silicon protective layer 120 with monatomic form membrane, it utilizes
The good compactness of alumina atom layer deposition film plays the effect of good isolation extraneous steam and oxygen.Alumina atom layer
The thickness range of deposition film is 0.5~1 μm.Certainly, the atomic layer deposition film of formation is not limited to alumina atom layer deposition film.
In traditional technology, the ability for completely cutting off extraneous steam and oxygen to make the flexible substrate of polymer have, one
Kind of scheme is to be arranged up to 5-6 layer of barrier layer of organic layer-inorganic layer form on polymeric layer, but this scheme acquisition
The elasticity of flexible substrate is relatively low.And technical solution using the present invention, since atomic layer deposition film 130 has outside good isolation
The ability of boundary's steam and oxygen, therefore compared with the scheme of traditional technology, the barrier layer of plurality of layers need not be arranged in flexible substrate
Ensure the ability of isolation extraneous steam and oxygen, therefore the thickness of flexible substrate is reduced, and is had preferable toughness, is suitable for
Flexible display device.The reduction of barrier layer also simplifies corresponding technological process, improves the performance of OLED device.Such as Fig. 1
In, in addition to atomic layer deposition film 130,140 two layers of the barrier of only the first silicon protective layer 120 and the second silicon protective layer.
The barrier layer that the more number of plies is set is needed in traditional technology, causes depositing technology complex, to the light of display
It learns and mechanical performance can all have a certain impact.Also, the elasticity of the inorganic barrier layer in barrier layer is low, is not easy to dispersion machinery
Stress, there are larger cracking risk, water oxygen is easily penetrated into.The solution of the present invention, using ELECTRODE WITH BILAYER POLYMERIC object as substrate, centre is set
The higher atomic layer deposition film of compactness is set, effectively avoids the defect of traditional technology, and thickness is smaller, toughness increases, and also increases
The performance of flexible display device.
For the present invention using ELECTRODE WITH BILAYER POLYMERIC object as substrate, atomic layer deposition film 130 is deposited on centre.In this way, poly- with regard to first
For closing 110 side of nitride layer, the permeability of water oxygen will be much smaller；For 150 side of the second polymer layer, when in flexibility
When the buffer layer 160 made from inorganic material is further set on substrate, it is arranged on the second polymer layer 150, and
Dimerization layer 150 itself also has frivolous, firm, flexible characteristic, therefore can plate several layers of buffer layers less, thus for device
Mechanical performance, optical property all increases.The purpose that the first silicon protective layer 120 and the second silicon protective layer 140 is arranged is,
There can be preferable cohesive force between atomic layer deposition film 130, the second polymer layer 150.
Fig. 2 discloses the method for preparing above-mentioned flexible substrate, includes the following steps.
S110, the first silicon protective layer is formed in the first polymer layer of offer.First provide one first polymerization layer by layer, it can be with
First the first polymer layer is positioned on the glass substrate of support, then utilizes chemical vapor deposition or plasma enhanced chemical gas
Phase sedimentation precipitates on a surface of the first polymer layer forms the first silicon protective layer.First silicon protective layer can be nitridation
Silicon or silicon dioxide layer.
S120, atomic layer deposition and atomic layer deposition film is formed on the first silicon protective layer.Using ALD technique in the first silicon
Deposition forms atomic layer deposition film on protective layer, as deposition forms alumina atom layer deposition film.
S130, the second silicon protective layer is formed on atomic layer deposition film.Continue with chemical vapor deposition or plasma
Enhancing chemical vapour deposition technique precipitates on atomic layer deposition film forms the second silicon protective layer.Second silicon protective layer can be nitridation
Silicon or silicon dioxide layer.
S140, the second polymer layer is formed on the second silicon protective layer.In this step, first polymer latex is coated on described
On second silicon protective layer；Then it toasts, the evaporation of the solvent in polymer latex is fallen and forms the second polymer layer.
In this step, buffer layer can also be further set on the second polymer layer.
It can be worth the flexible substrate of the ability with the extraneous steam of good isolation and oxygen, precipitator using the above method
Skill is simple, is injured to display device small.The thickness of flexible substrate is relatively low, toughness is preferable, helps to improve the performance of flexible device.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of flexible substrate, which is characterized in that including stack gradually the first polymer layer, the first silicon protective layer, atomic layer
Deposition film, the second silicon protective layer and the second polymer layer；The first silicon protective layer and the second silicon protective layer use chemical gaseous phase
Sedimentation or plasma enhanced chemical vapor deposition method are formed, so that the first silicon protective layer and the atomic layer deposition film
Preferable cohesive force, and the second silicon protective layer and the atomic layer deposition film and institute are all had with the first polymer layer
It states the second polymer layer and all has preferable cohesive force.
2. flexible substrate according to claim 1, which is characterized in that the first polymer layer and the second polymer layer are
Polyimide layer, Polycarbonate Layer, polyethylene terephthalate layer, poly- bitter edible plant naphthalate layer or polyethersulfon layer.
3. flexible substrate according to claim 1, which is characterized in that the thickness of the atomic layer deposition film is 0.5~1 μ
The thickness of m, the first polymer layer and the second polymer layer is 5~10 μm, the first silicon protective layer and the protection of the second silicon
The thickness of layer is 0.5~1 μm.
4. flexible substrate according to claim 1, which is characterized in that the first silicon protective layer and the second silicon protective layer are
Silicon nitride or silicon dioxide layer.
5. flexible substrate according to claim 1, which is characterized in that the atomic layer deposition film is heavy for alumina atom layer
Integrated membrane.
6. a kind of preparation method of flexible substrate, which is characterized in that include the following steps：
It is formed in the first polymer layer of offer using chemical vapour deposition technique or plasma enhanced chemical vapor deposition method
First silicon protective layer；
Atomic layer deposition and atomic layer deposition film is formed on the first silicon protective layer；
Second silicon is formed on atomic layer deposition film using chemical vapour deposition technique or plasma enhanced chemical vapor deposition method
Protective layer；
The second polymer layer is formed on the second silicon protective layer.
7. the preparation method of flexible substrate according to claim 6, which is characterized in that the first silicon protective layer and second
Silicon protective layer is silicon nitride or silicon dioxide layer.
8. the preparation method of flexible substrate according to claim 6, which is characterized in that the shape on the second silicon protective layer
Include at the step of the second polymer layer：
Polymer latex is coated on the second silicon protective layer；
Baking, the evaporation of the solvent in polymer latex is fallen and forms the second polymer layer.
9. the preparation method of flexible substrate according to claim 6, which is characterized in that the preparation method of the flexible substrate
It further include the steps that the setting buffer layer on the second polymer layer.
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| CN201410809460.9A CN105789473B (en) | 2014-12-22 | 2014-12-22 | Flexible substrate and preparation method thereof |
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| CN201410809460.9A CN105789473B (en) | 2014-12-22 | 2014-12-22 | Flexible substrate and preparation method thereof |
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| CN105789473B true CN105789473B (en) | 2018-11-09 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109360888A (en) * | 2017-08-18 | 2019-02-19 | 武汉华星光电半导体显示技术有限公司 | Flexible substrate of flexible OLED display panel and preparation method thereof |
| CN110600636A (en) * | 2019-08-26 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | Flexible display panel preparation method and flexible display panel |
| CN113662292A (en) * | 2021-07-06 | 2021-11-19 | 上海海关工业品与原材料检测技术中心 | A washable electroluminescent garment |
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| KR20110131136A (en) * | 2010-05-28 | 2011-12-06 | 성균관대학교산학협력단 | Flexible organic / inorganic composite protective film for preventing moisture and / or oxygen permeation, preparation method thereof, and electronic device comprising the flexible organic / inorganic composite protective film |
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| CN103022354A (en) * | 2012-12-28 | 2013-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Flexible substrate |
| CN103258955A (en) * | 2012-02-20 | 2013-08-21 | 中国科学院微电子研究所 | Encapsulation method of organic electronic device |
| CN203659835U (en) * | 2013-12-31 | 2014-06-18 | 中国科学院微电子研究所 | Film packaging system |
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| KR20110131136A (en) * | 2010-05-28 | 2011-12-06 | 성균관대학교산학협력단 | Flexible organic / inorganic composite protective film for preventing moisture and / or oxygen permeation, preparation method thereof, and electronic device comprising the flexible organic / inorganic composite protective film |
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