TW201230428A - Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device - Google Patents
Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device Download PDFInfo
- Publication number
- TW201230428A TW201230428A TW100133214A TW100133214A TW201230428A TW 201230428 A TW201230428 A TW 201230428A TW 100133214 A TW100133214 A TW 100133214A TW 100133214 A TW100133214 A TW 100133214A TW 201230428 A TW201230428 A TW 201230428A
- Authority
- TW
- Taiwan
- Prior art keywords
- protective film
- chamber
- film
- organic
- mask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 230000001681 protective effect Effects 0.000 claims abstract description 108
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 52
- 239000010410 layer Substances 0.000 claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000012044 organic layer Substances 0.000 claims abstract description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 4
- 239000011147 inorganic material Substances 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 26
- 239000012495 reaction gas Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052593 corundum Inorganic materials 0.000 abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 282
- 238000012546 transfer Methods 0.000 description 32
- 239000002245 particle Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000021185 dessert Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
201230428 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於有機EL元件之製造方法、和在該 製造方法中所使用之成膜裝置、以及藉由該製造方法所製 ‘造出之有機EL元件。 【先前技術】 有機發光二極體（OLED )，由於發光效率高，且能 夠組裝出薄的發光裝置，因此，近年來，係提案有對於大 面積化之電視或照明裝置之應用。 在有機EL元件中，由於係有著若是水分進入至有機 層中則會產生劣化並使壽命變短的性質，因此，係成爲需 要對於大氣中之水分作遮斷的密封技術。 在先前技術之有機EL元件製造的密封工程中，係進 行有由玻璃罐所致之密封，但是，會由於玻璃罐之厚度而 導致顯示器之厚度增加，而無法發揮有機EL元件之特徵 〇 因此，伴隨著近年之顯示器的薄型化之進展，係對於 • 由薄膜所致的密封技術有所硏究。 • 作爲薄膜密封技術，將SiN、SiON或Si02等之無機 物的薄膜（以下，稱爲無機密封膜）藉由成膜溫度爲低之 電漿化學氣相蒸鍍法（PECVD )來進行成膜的方法，係已 爲週知。 在專利文獻1中，係記載有：藉由PECVD法來成膜 -5- 201230428 無機密封膜之方法、和藉由濺鍍法或真空蒸鍍法等之物理 氣相蒸鍍（PVD )法來成膜無機密封膜之方法。 然而，藉由CVD法或PVD法所形成之無機密封膜， 會有在內部混入粒子或者是產生針孔的情況，而使密封性 成成爲不充分，並成爲容易使水分從其與粒子間的界面或 針孔而侵入，因此，係有著無法得到長期信賴性之問題。 在專利文獻1中，雖係揭示有在藉由CVD法或PVD 法所形成之無機密封膜的表面上成膜樹脂膜的技術，但是 ，會由於無機密封膜和樹脂膜之間的應力差異，而導致密 著性爲差，並有著無法將水分遮斷性能提升之問題。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利第3817081號公報 【發明內容】 [發明所欲解決之課題] 本發明，係爲了解決上述先前技術之問題而創作者， 其目的，係在於提供一種將有機EL元件之保護膜的密封 性能作提升之技術。 [用以解決課題之手段] 爲了解決上述課題，本發明，係爲一種有機EL元件 之製造方法，係爲對於在基板上依序層積有第1電極層和201230428 6. Technical Field of the Invention The present invention relates to a method for producing an organic EL device, a film forming apparatus used in the method, and a method of manufacturing the same by the method. Organic EL element. [Prior Art] Since an organic light-emitting diode (OLED) has high luminous efficiency and can assemble a thin light-emitting device, in recent years, applications for a large-area television or lighting device have been proposed. In the organic EL device, since moisture is deteriorated and the life is shortened when moisture enters the organic layer, it is a sealing technique that requires blocking of moisture in the atmosphere. In the sealing process of the prior art organic EL element manufacturing, the sealing by the glass can is performed, but the thickness of the display is increased due to the thickness of the glass can, and the characteristics of the organic EL element cannot be exhibited. With the progress of the thinning of displays in recent years, the sealing technology caused by the film has been studied. • As a film sealing technique, a film of an inorganic substance such as SiN, SiON or SiO 2 (hereinafter referred to as an inorganic sealing film) is formed by plasma chemical vapor deposition (PECVD) with a low film formation temperature. Methods are well known. Patent Document 1 describes a method of forming a film of -5 to 201230428 inorganic sealing film by a PECVD method, and a physical vapor deposition (PVD) method by a sputtering method or a vacuum deposition method. A method of forming an inorganic sealing film. However, in the inorganic sealing film formed by the CVD method or the PVD method, particles may be mixed therein or pinholes may be formed, and the sealing property may be insufficient, and the water may be easily separated from the particles. The interface or the pinhole penetrates, so there is a problem that long-term reliability cannot be obtained. In Patent Document 1, a technique of forming a resin film on the surface of an inorganic sealing film formed by a CVD method or a PVD method is disclosed, but due to a stress difference between the inorganic sealing film and the resin film, As a result, the adhesion is poor, and there is a problem that the moisture blocking performance cannot be improved. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent No. 38107081 [Summary of the Invention] [Problems to be Solved by the Invention] The present invention has been made in order to solve the problems of the prior art described above. It is a technique for improving the sealing performance of a protective film of an organic EL element. [Means for Solving the Problem] In order to solve the above problems, the present invention provides a method for producing an organic EL device in which a first electrode layer is sequentially laminated on a substrate.
S -6 - 201230428 第2電極層之處理對象物的前述第2電極層上成膜保護膜 之有機EL·元件之製造方法，其特徵爲：具備有：第1保 護膜成膜工程，係密著於前述第2電極層地，而成膜由在 化學構造中含有Si之無機物所成的第1保護膜；和第2 保護膜成膜工程，係密著於前述第1保護膜地，而藉由 ALD法來成膜由A1203所成之第2保護膜。 本發明’係爲一種有機EL元件之製造方法，其中， 在前述第1保護膜成膜工程中，係藉由PECVD法或者是 濺鍍法中之其中一者的成膜方法，來成膜前述第1保護膜 〇 本發明，係爲一種有機EL元件之製造方法，其中， 前述第1保護膜，係爲以由SiN、Si ON、SiO所成之群中 的其中一種之無機物所成。 本發明，係爲一種有機EL元件之製造方法，其中， 在前述第2保護膜成膜工程中，係將前述第2保護膜以 1 0 n m以上1 〇 〇 n m以下之厚度來成膜。 本發明，係爲一種有機EL元件之製造方法，其中， 從開始密著於前述第2電極層地來進行前述第1保護膜之 成膜時起，直到密著於前述第1保護膜地所進行之前述第 2保護膜之成膜結束爲止的期間中，係並不使前述處理對 象物暴露於外氣中。 本發明，係爲一種成膜裝置，係爲在有機EL元件之 製造方法中所使用的成膜裝置，其特徵爲，具備有：第1 成膜室，係構成爲能夠成膜前述第1保護膜：和第2成膜 -7 - 201230428 室，係構成爲能夠成膜前述第2保護膜 成膜室’係具備有：真空槽；和基板保 前述真空槽內，並保持前述處理對象物 部，係將前述原料氣體放出至前述真空 放出部，係將前述反應氣體放出至前述 排氣部，係將前述真空槽內作真空排氣 對被保持在前述基板保持部處之前述處 ，前述基板保持部，係構成爲將前述處 水平的狀態下而沿著鉛直方向作複數枚 本發明，係爲藉由有機EL元件之 有機EL元件。 [發明之效果] 由於係藉由ALD法，而密著於第 第2保護膜，因此，第1保護膜之密封 保護膜所塡埋，密封性能係提升。 當將第1保護膜成膜工程和第2保 真空一貫處理來進行的情況時，保護膜 一步被提升。 在由ALD法所進行之第2保護膜 於係能夠對於複數枚之基板同時進行成 【實施方式】 ，前述第2保護膜 持部，係被配置在 ;和原料氣體放出 槽內；和反應氣體 真空槽內；和真空 :和加熱裝置，係 理對象物進行加熱 理對象物在設爲了 重疊保持。 製造方法所製造之 1保護膜地來成膜 缺陷部分係被第2 護膜成膜工程藉由 之密封性能係更進 之成膜工程中，由 膜，因此生產性係S -6 - 201230428 A method for producing an organic EL element in which a protective film is formed on the second electrode layer of the object to be processed in the second electrode layer, characterized in that: the first protective film forming process is provided In the second electrode layer, a first protective film formed of an inorganic substance containing Si in a chemical structure is formed, and a second protective film forming process is adhered to the first protective film. A second protective film made of A1203 was formed by an ALD method. The present invention is a method for producing an organic EL device, wherein the first protective film forming process is formed by a film forming method of one of a PECVD method or a sputtering method. The first protective film is a method for producing an organic EL device, wherein the first protective film is made of an inorganic material selected from the group consisting of SiN, SiON, and SiO. The present invention is a method for producing an organic EL device, wherein the second protective film is formed by a thickness of 1 n n or more and 1 〇 〇 n m or less in the second protective film forming process. The present invention is a method for producing an organic EL device, wherein the first protective film is adhered to the second electrode layer, and the first protective film is adhered to the first protective film. In the period from the completion of the film formation of the second protective film, the object to be processed is not exposed to the outside air. The present invention relates to a film forming apparatus used in a method of producing an organic EL device, characterized in that the first film forming chamber is configured to be capable of forming the first protective film. The film and the second film forming -7 - 201230428 are configured to be capable of forming the second protective film forming chamber', and are provided with a vacuum chamber; and the substrate is held in the vacuum chamber, and the object to be processed is held. The raw material gas is discharged to the vacuum discharge portion, and the reaction gas is discharged to the exhaust portion, and the vacuum chamber is held in the vacuum holder to be held at the substrate holding portion. In the present invention, the present invention is an organic EL element which is an organic EL element, in which the present invention is formed in a plurality of stages in the vertical direction. [Effects of the Invention] Since the second protective film is adhered to the ALD method, the sealing protective film of the first protective film is buried, and the sealing performance is improved. When the first protective film forming process and the second vacuum keeping process are carried out, the protective film is lifted in one step. The second protective film by the ALD method can be simultaneously formed into a plurality of substrates, wherein the second protective film holding portion is disposed in the raw material gas discharge groove; and the reaction gas In the vacuum chamber; and the vacuum: and the heating device, the object to be heated is placed on the object to be held in an overlapping manner. The film formed by the manufacturing method is formed into a film. The defect portion is formed by the film formation process of the second film, and the sealing property is further improved. In the film forming process, the film is produced.
S -8 - 201230428 〈成膜裝置之構造〉 對於本發明之成膜裝置的構造作說明。圖1，係爲此 成膜裝置10之其中一例的平面圖。 成膜裝置10，於此係具備有：前工程室11、和反轉 室14、和第1搬送室12、和搬入搬出室16、和裝配室21 、和第2搬送室23、和取出室25、和後工程室27，此些 之各室，係依此順序而被串聯地作連接。 各室，係被與成膜裝置1 0之外側的外氣作遮斷。 在前工程室11和反轉室14以及第1搬送室12處， 係被連接有未圖示之真空排氣裝置，並成爲能夠將內部作 真空排氣。 另一方面，在裝配室21和第2搬送室23和取出室 25以及後工程室27處，係被連接有未圖示之氣體導入裝 置’並成爲能夠使N2氣體或Ar氣體等之作了乾燥的惰性 氣體流入內部而設爲大氣壓。 在搬入搬出室16處，係被連接有未圖示之真空排氣 裝置和氣體導入裝置’並構成爲能夠將內部設爲大氣壓以 及真空氛圍。 本發明之成膜裝置10，係具備有複數之第1成膜室 13a〜13e、和一乃至複數之第2成膜室24a、24b。於此 ’係具備有2個的第2成膜室24a、24b。 第1成膜室13a〜13e’係被與第1搬送室12作連接 ，第2成膜室24a、24b ’係被與第2搬送室23作連接》 -9- 201230428 〈第1成膜室之構造〉 第1成膜室13a〜13e之構造，係互爲相同，故以符 號1 3 a之第1成膜室爲代表來作說明。 圖4，係爲此第1成膜室13a之其中一例的內部構成 圖。 第1成膜室13a，係具備有真空槽41、和噴淋頭47 、和基板平台46、以及原料氣體源43 » 基板平台46，係被配置在真空槽41內，並以能夠在 朝向上方之面上保持處理對象物的方式而構成之。符號1 ，係對於被配置在基板平台46上之處理對象物作展示。 噴淋頭47,係具備有被設置了複數之放出孔51的噴 淋板47a、和電極框47b。電極框47b之邊緣，係被固定 在噴淋板47a之背面的外周部處，在噴淋頭47a和電極框 47b之間，係被形成由被噴淋板47a和電極框47b所包圍 之放出空間44。噴淋板47a，係被與電極框47b作電性連 接。 噴淋頭47，係使噴淋板47a和基板平台46之朝向上 方的面相對面，並被配置在基板平台46之上方。 原料氣體源43，係被與噴淋頭47作連接，並構成爲 能夠將原料氣體放出至放出空間44中。若是從原料氣體 源44而放出複數種類之原料氣體，則原料氣體係成爲在 放出空間43中而相互混合並被從放出孔51而放出至真空 槽41內。 在電極框47b處，係被電性連接有高頻電源48，高S -8 - 201230428 <Structure of Film Forming Apparatus> The structure of the film forming apparatus of the present invention will be described. Fig. 1 is a plan view showing an example of the film forming apparatus 10 for this purpose. The film forming apparatus 10 includes a front working chamber 11 and an inversion chamber 14, a first transfer chamber 12, a loading/unloading chamber 16, a mounting chamber 21, a second transfer chamber 23, and a take-out chamber. 25. The rear engineering room 27, each of which is connected in series in this order. Each chamber is blocked by the outside air on the outside of the film forming apparatus 10. In the front working chamber 11, the reversing chamber 14, and the first transfer chamber 12, a vacuum exhausting device (not shown) is connected, and the inside can be evacuated. On the other hand, in the assembly chamber 21, the second transfer chamber 23, the take-out chamber 25, and the rear work chamber 27, a gas introduction device (not shown) is connected, and N2 gas or Ar gas can be made. The dry inert gas flows into the interior and is set to atmospheric pressure. In the loading/unloading chamber 16, a vacuum exhausting device and a gas introducing device (not shown) are connected to each other, and the inside can be set to an atmospheric pressure and a vacuum atmosphere. The film forming apparatus 10 of the present invention includes a plurality of first film forming chambers 13a to 13e, and a plurality of second film forming chambers 24a and 24b. Here, there are provided two second film forming chambers 24a and 24b. The first film forming chambers 13a to 13e' are connected to the first transfer chamber 12, and the second film forming chambers 24a and 24b' are connected to the second transfer chamber 23" -9-201230428 <1st film forming chamber Structures> The structures of the first film forming chambers 13a to 13e are the same as each other. Therefore, the first film forming chamber of the symbol 133a will be described as a representative. Fig. 4 is an internal configuration diagram of an example of the first film forming chamber 13a. The first film forming chamber 13a includes a vacuum chamber 41, a shower head 47, a substrate stage 46, and a material gas source 43 » a substrate stage 46, which are disposed in the vacuum chamber 41 so as to be able to face upward. It is configured to hold the object to be processed on the surface. Reference numeral 1 denotes a processing object placed on the substrate stage 46. The shower head 47 is provided with a shower plate 47a provided with a plurality of discharge holes 51, and an electrode frame 47b. The edge of the electrode frame 47b is fixed to the outer peripheral portion of the back surface of the shower plate 47a, and is formed between the shower head 47a and the electrode frame 47b by the shower plate 47a and the electrode frame 47b. Space 44. The shower plate 47a is electrically connected to the electrode frame 47b. The shower head 47 is disposed such that the shower plate 47a and the substrate platform 46 face the upper surface, and are disposed above the substrate stage 46. The material gas source 43 is connected to the shower head 47, and is configured to be capable of discharging the material gas into the discharge space 44. When a plurality of types of material gases are discharged from the source gas source 44, the material gas system is mixed in the discharge space 43 and discharged from the discharge holes 51 into the vacuum chamber 41. At the electrode frame 47b, a high-frequency power source 48 is electrically connected, which is high.
-10- S 201230428 頻電源48，係構成爲能夠對於電極框47b施加高頻電壓 。若是對於電極框47b施加高頻電壓，則被放出至真空槽 41內之原料氣體係成爲被電漿化。 在噴淋板47a和基板平台46之間，係被配置有遮罩 保持部49，該遮罩保持部49,係構成爲能夠將第1遮罩 板水平地作保持。符號9,係代表被保持在遮罩保持部49 處之第1遮罩板。 在基板平台46之下方，係被配置有平台升降裝置45 ，並構成爲能夠使基板平台46與處理對象物1 一同地沿 著鉛直方向移動。若是使基板平台46上升，則基板平台 46上之處理對象物1的表面係朝被保持在遮罩保持部49 上之第1遮罩板9的背面接近並作接觸，若是使基板平台 46下降，則處理對象物1係從第丨遮罩板9而分離。 在真空槽41處，係被連接有真空排氣裝置42，並構 成爲能夠將內部作真空排氣。 〈第2成膜室之構造〉 第2成膜室24a、24b之構造，係互爲相同，故以符 號24a之第2成膜室爲代表來作說明。 圖2’係爲第2成膜室24a和第2搬送室23和裝配 室21以及磁石遮罩投入室22之內部構成圖。 第2成膜室24a’係具備有真空槽81、和基板保持部 82、和原料氣體放出部83、和反應氣體放出部84、和洗 淨氣體放出部87、和真空排氣部85、以及加熱裝置86。 -11 - 201230428 基板保持部82，係爲框體，並於內部而沿著鉛直方 向並排設置有複數之基板保持空間95。於此，相鄰接之2 個的基板保持空間9 5，係經由隔壁而被作遮斷。 基板保持空間95之厚度，係被形成爲較後述之磁石 板32和處理對象物丨以及遮罩板31作層積所構成的成膜 對象物1’之厚度更大，並構成爲能夠於內部將成膜對象 物1’作水平保持。 若是將成膜對象物1，保持在各基板保持空間95中， 則成膜對象物1’係成爲沿著鉛直方向而被作重疊配置。 故而’係成爲就算是將被保持在基板保持部82處之成膜 對象物1’的枚數增加，亦不會使裝置之水平方向的佔有 面積增加。 在真空槽81內，氣體導入管8 8係被鉛直立起地作配 置。氣體導入管88之其中一端，係氣密地貫通真空槽81 之壁面並延伸至真空槽81之外側處。 原料氣體放出部83和反應氣體放出部84以及洗淨氣 體放出部8 7，係被配置在真空槽8 1之外側，並分別被與 氣體導入管88作連接。 原料氣體放出部83，係構成爲能夠放出原料氣體， 反應氣體放出部84，係被構成爲能夠放出與原料氣體起 反應之反應氣體，洗淨氣體放出部87，係被構成爲能夠 放出惰性之洗淨氣體。 在氣體導入管88之外周側面的能夠與基板保持部82 相對面的部分處，係沿著鉛直方向而並排設置有複數之放-10- S 201230428 The frequency power supply 48 is configured to be capable of applying a high-frequency voltage to the electrode frame 47b. When a high-frequency voltage is applied to the electrode frame 47b, the material gas system discharged into the vacuum chamber 41 is plasma-formed. Between the shower plate 47a and the substrate stage 46, a mask holding portion 49 is disposed, and the mask holding portion 49 is configured to be capable of horizontally holding the first mask. Reference numeral 9 denotes a first mask which is held at the mask holding portion 49. Below the substrate stage 46, a platform lifting device 45 is disposed, and the substrate stage 46 can be moved in the vertical direction together with the object 1 to be processed. When the substrate stage 46 is raised, the surface of the object 1 to be processed on the substrate stage 46 is brought into contact with the back surface of the first mask 9 held by the mask holding portion 49, and the substrate platform 46 is lowered. Then, the object 1 to be processed is separated from the second mask sheet 9. At the vacuum chamber 41, a vacuum exhaust unit 42 is connected and configured to evacuate the inside. <Structure of the second film forming chamber> The structures of the second film forming chambers 24a and 24b are the same as each other. Therefore, the second film forming chamber of the symbol 24a will be described as a representative. Fig. 2' is an internal view of the second film forming chamber 24a, the second transfer chamber 23, the assembly chamber 21, and the magnet mask input chamber 22. The second film forming chamber 24a' includes a vacuum chamber 81, a substrate holding portion 82, a material gas discharge portion 83, a reaction gas discharge portion 84, a cleaning gas discharge portion 87, and a vacuum exhaust portion 85, and Heating device 86. -11 - 201230428 The substrate holding portion 82 is a frame body, and a plurality of substrate holding spaces 95 are arranged side by side in the vertical direction. Here, the adjacent substrate holding spaces 905 are blocked by the partition walls. The thickness of the substrate holding space 95 is formed to be larger than the thickness of the film formation object 1' formed by laminating the magnet plate 32, the object to be processed, and the mask 31 to be described later, and is configured to be internal. The film formation object 1' is held horizontally. When the film formation object 1 is held in each of the substrate holding spaces 95, the film formation object 1' is placed in a superposed manner in the vertical direction. Therefore, even if the number of the film formation objects 1' held by the substrate holding portion 82 is increased, the area occupied by the horizontal direction of the apparatus is not increased. In the vacuum chamber 81, the gas introduction pipe 8 8 is arranged to stand upright. One end of the gas introduction pipe 88 is airtightly penetrated through the wall surface of the vacuum chamber 81 and extends to the outer side of the vacuum chamber 81. The material gas discharge portion 83, the reaction gas discharge portion 84, and the cleaning gas discharge portion 87 are disposed outside the vacuum chamber 81, and are connected to the gas introduction pipe 88, respectively. The material gas discharge unit 83 is configured to be capable of emitting a material gas, and the reaction gas discharge unit 84 is configured to be capable of emitting a reaction gas that reacts with the material gas, and the purge gas discharge unit 87 is configured to be inert. Washing gas. At a portion of the outer circumferential side of the gas introduction pipe 88 that is opposite to the substrate holding portion 82, a plurality of them are arranged side by side in the vertical direction.
S -12- 201230428 出孔90。相鄰接之放出孔90的鉛直方向之中心間距離’ 係被設爲和相鄰接之基板保持空間95的鉛直方向之中心 間距離相同之長度。 在基板保持部82之下方，係被配置有基板保持部升 降裝置89，並構成爲能夠使基板保持部82沿著鉛直方向 移動。若是使基板保持部8 2沿著鉛直方向作移動’則各 基板保持空間95，係成爲分別被配置在與相異之放出孔 90相同的高度處。在此狀態下，若是從放出孔90而放出 氣體，則被朝向水平方向放出之氣體，係流入至與該放出 孔90相同高度之基板保持空間95中。 基板保持部82之構造，只要是能夠在從放出孔90所 放出之氣體流入至基板保持空間95中時而將相鄰接之2 個的基板保持空間95之間作遮斷的構成，則係並不被限 定於將相鄰接的2個基板保持空間95藉由隔壁來作遮斷 之構成，亦可如圖6(a)中所示一般，在相鄰接之2個 基板保持空間95之間的隔壁處，設置較遮罩板31之外周 更小的孔，並在將成膜對象物Γ配置在各基板保持空間 95中之前，使相鄰接之2個基板保持空間95通過孔而被 作連接。 於此情況，若是在各基板保持空間95處配置成膜對 象物1’，則遮罩板31係將孔覆蓋，相鄰接之2個基板保 持空間95之間係成爲被作遮斷。 基板保持部82之構造，只要是能夠將成膜對象物r 在設爲了水平的狀態下而於鉛直方向上作重疊保持，則係 -13- 201230428 並不被限定於上述之構成’亦可如圖6(b)中所示一般 ，使基板保持空間9 5相互被作連接’亦即是在同一之空 間中而配置複數的成膜對象物1’。 但是，由於係以將基板保持空間95相互作遮斷的情 況時，爲能夠使基板保持空間95之容積變小，並且用以 將成膜對象物 Γ表面之氣體壓力提高時所需要的氣體量 亦會變少，因此，係爲理想。 加熱裝置8 6，於此係爲紅外線燈管，並被配置在真 空槽81之外側，而成爲能夠對於被保持在基板保持部8 2 處之成膜對象物1’的表面照射紅外線並作加熱。 本發明之加熱裝置86，只要是能夠對於被保持在基 板保持部82處之成膜對象物Γ的表面作加熱，則係並不 被限定於上述之構成，亦可構成爲：加熱裝置86係爲可 發熱之熱板，並分別被設置在基板保持空間95之壁面處 ’而藉由熱傳導來將成膜對象物1’分別作加熱。 在真空槽81處，係被連接有真空排氣部85，真空排 氣部8 5，係構成爲能夠將真空槽8 1之內部作真空排氣。 〈成膜方法〉 針對使用有上述之成膜裝置10的保護膜之成膜方法 作說明。 參考圖1，預先將搬入搬出室16和裝配室21之間的 真空閥關閉。對於前工程室11和第1搬送室12和第1成 膜室13a〜i3e和遮罩保管室15以及搬入搬出室16作真S -12- 201230428 Outlet 90. The distance between the centers in the vertical direction of the adjacent discharge holes 90 is set to be the same as the distance between the centers of the adjacent substrate holding spaces 95 in the vertical direction. The substrate holding portion lifting device 89 is disposed below the substrate holding portion 82, and is configured to be able to move the substrate holding portion 82 in the vertical direction. When the substrate holding portion 8 2 is moved in the vertical direction, the substrate holding spaces 95 are disposed at the same height as the different discharge holes 90. In this state, when the gas is released from the discharge hole 90, the gas discharged in the horizontal direction flows into the substrate holding space 95 having the same height as the discharge hole 90. The structure of the substrate holding portion 82 is such that when the gas discharged from the discharge hole 90 flows into the substrate holding space 95, the adjacent substrate holding spaces 95 are blocked. It is not limited to the configuration in which two adjacent substrate holding spaces 95 are blocked by the partition walls. Alternatively, as shown in FIG. 6(a), the adjacent substrate holding spaces 95 may be provided. A hole smaller than the outer circumference of the mask plate 31 is provided between the partition walls, and two adjacent substrate holding spaces 95 are passed through the holes before the film formation object is placed in each of the substrate holding spaces 95. And being connected. In this case, if the film object 1' is disposed in each of the substrate holding spaces 95, the mask 31 covers the holes, and the two adjacent substrate holding spaces 95 are blocked. The structure of the substrate holding portion 82 is not limited to the above-described configuration as long as the film formation target r can be overlapped and held in the vertical direction while being horizontal. As shown in Fig. 6(b), generally, the substrate holding spaces 9.5 are connected to each other, that is, a plurality of film forming objects 1' are disposed in the same space. However, in the case where the substrate holding space 95 is blocked from each other, the amount of gas required to increase the volume of the substrate holding space 95 and increase the gas pressure of the surface of the film forming object is increased. It will also be less, so it is ideal. The heating device 8.6 is an infrared ray tube and is disposed on the outer side of the vacuum chamber 81, so that the surface of the film formation object 1' held by the substrate holding portion 8 2 can be irradiated with infrared rays and heated. . The heating device 86 of the present invention is not limited to the above-described configuration as long as it can heat the surface of the film formation target held by the substrate holding portion 82, and may be configured as a heating device 86. The heat generating heat plates are respectively disposed at the wall surface of the substrate holding space 95, and the film forming objects 1' are heated by heat conduction, respectively. In the vacuum chamber 81, a vacuum exhausting portion 85 is connected, and the vacuum exhausting portion 85 is configured to evacuate the inside of the vacuum chamber 81. <Film Forming Method> A film forming method using the protective film of the above-described film forming apparatus 10 will be described. Referring to Fig. 1, the vacuum valve between the loading/unloading chamber 16 and the fitting chamber 21 is closed in advance. The front working chamber 11 and the first transfer chamber 12 and the first film forming chambers 13a to i3e, the mask storage chamber 15, and the loading/unloading chamber 16 are genuine.
S -14- 201230428 空排氣，而形成真空氛圍。之後，持續進行真空排氣，而 將真空氛圍作維持。 對於裝配室21和第2搬送室23和取出室25和後工 程室27和第2成膜室24a、24b和遮罩投入室22以及磁 石遮罩排出室26，流入惰性氣體，並設爲大氣壓。之後 ，持續進行惰性氣體之導入，而將大氣壓作維持。 在第1搬送室12處，係被配置有第1搬送機器人19 。在遮罩保管室15處，係被保管有複數枚之第1遮罩板 9。從遮罩保管室15而取出第1遮罩板9，並預先設置在 第1成膜室13a〜13e內。 圖7(a)，係爲藉由此成膜裝置10所成膜之處理對 象物1的剖面圖。處理對象物1，係在玻璃基板2上依序 被層積有第1電極層3和有機層4以及第2電極層5。在 第2電極層5之表面上，係預先被制定有電極拉出部和應 成膜保護膜之成膜部。 參考圖1，處理對象物1係在使第2電極層5朝向下 方的狀態下，而被從前工程室11搬入至反轉室14中。 在反轉室14處，係被配置有將處理對象物1之表面 和背面的朝向作翻轉之未圖示的反轉裝置。藉由反轉裝置 ，處理對象物1之朝向係被作翻轉，並使第2電極層5朝 向上方。 藉由第1搬送機器人19，而將處理對象物1從反轉 室14取出，並搬入至第1成膜室i3a〜13e的其中一室內 -15- 201230428 將從前工程室11所依序被搬送而來之複數枚的處理 對象物1，分別搬入至相異之第1成膜室13a〜13e中。 〈第1保護膜成膜工程〉 各第1成膜室13a〜13e處之第1保護膜成膜方法， 係互爲相同，故以符號13a之第1成膜室爲例，來對於由 PECVD法所進行之成膜方法作說明。 參考圖4，藉由真空排氣裝置42而對真空槽41內作 真空排氣，之後，持續進行真空排氣，而維持真空氛圍。 在遮罩保持部49處，係預先保持有具備著遮蔽部和 開口部之第1遮罩板9。使基板平台46下降，而使其從 第1遮罩板9分離。 將處理對象物1搬入至真空槽41內，並以使第2電 極層5朝向上方的朝向來載置於基板平台46上。 藉由未圖示之對位手段，來使基板平台46與處理對 象物1 一同地在水平方向上移動，並且在鉛直之旋轉軸線 的周圍作旋轉，而以使第1遮罩板9之遮蔽部覆蓋處理對 象物1之第2電極層5的電極拉出部並使第2電極層5之 成膜部從第1遮罩板9之開口部而露出的方式，來進行對 位。 對位手段’係亦可構成爲使第1遮罩板9在水平方向 上移動並且在鉛直之旋轉軸線的周圍作旋轉，而對於靜止 了的處理對象物1進行對位。 在使處理對象物1和第1遮罩板9作了對位的狀態下S -14- 201230428 Air venting, creating a vacuum atmosphere. Thereafter, vacuum evacuation is continued, and the vacuum atmosphere is maintained. In the assembly chamber 21, the second transfer chamber 23, the take-out chamber 25, the rear work chamber 27, the second film forming chambers 24a and 24b, the mask input chamber 22, and the magnet mask discharge chamber 26, an inert gas is introduced and is set to atmospheric pressure. . Thereafter, the introduction of the inert gas is continued while the atmospheric pressure is maintained. The first transfer robot 19 is disposed in the first transfer chamber 12. In the mask storage room 15, a plurality of first mask sheets 9 are stored. The first mask plate 9 is taken out from the mask storage chamber 15, and is placed in the first film forming chambers 13a to 13e in advance. Fig. 7(a) is a cross-sectional view of the object 1 processed by the film formation apparatus 10. In the object 1 to be processed, the first electrode layer 3, the organic layer 4, and the second electrode layer 5 are sequentially laminated on the glass substrate 2. On the surface of the second electrode layer 5, a film drawing portion and a film forming portion to be formed into a film protective film are prepared in advance. Referring to Fig. 1, the object to be processed 1 is carried into the inversion chamber 14 from the front engineering chamber 11 while the second electrode layer 5 is directed downward. In the reversing chamber 14, an inverting device (not shown) that reverses the orientation of the front and back surfaces of the object 1 is disposed. By the inversion means, the orientation of the object 1 is reversed, and the second electrode layer 5 is directed upward. By the first transfer robot 19, the object to be processed 1 is taken out from the reversing chamber 14 and carried into one of the first film forming chambers i3a to 13e, -15-201230428, and is transported from the former engineering room 11 in order. The plurality of processing objects 1 are carried into the first film forming chambers 13a to 13e which are different from each other. <First Protective Film Forming Process> The first protective film forming method in each of the first film forming chambers 13a to 13e is the same, and therefore the first film forming chamber of the symbol 13a is taken as an example for PECVD. The film formation method carried out by the law is explained. Referring to Fig. 4, the inside of the vacuum chamber 41 is evacuated by the vacuum exhausting means 42, and thereafter, vacuum evacuation is continued to maintain the vacuum atmosphere. At the mask holding portion 49, the first mask 9 having the shielding portion and the opening portion is held in advance. The substrate stage 46 is lowered to be separated from the first mask plate 9. The object to be processed 1 is carried into the vacuum chamber 41, and placed on the substrate stage 46 with the second electrode layer 5 facing upward. The substrate stage 46 is moved in the horizontal direction together with the object 1 to be processed by a positioning means (not shown), and is rotated around the vertical axis of rotation so as to shield the first mask 9 The electrode-drawing portion of the second electrode layer 5 covering the object 1 is placed so that the film formation portion of the second electrode layer 5 is exposed from the opening of the first mask plate 9. The aligning means may be configured such that the first masking plate 9 is moved in the horizontal direction and rotated around the vertical axis of rotation to align the stationary object 1 to be processed. In a state where the object to be processed 1 and the first mask 9 are aligned
S -16- 201230428 ’藉由平台升降裝置45而使基板平台46和處理對象物1 一同上升，並使處理對象物1之表面和第1遮罩板9之背 面作接觸。 從原料氣體源43而對於放出空間44放出矽烷（SiH4 )和氨（NH3)以及氮（N2)氣體，並使其混合，而將混 合氣體從放出孔51放出。 若是從高頻電源48而對於電極框47b施加高頻電壓 ，則從放出孔5 1所被放出至真空槽4 1內之混合氣體係成 爲被電漿化，並產生化學反應，而產生SiN之粒子。所產 生了的SiN之粒子，係附著在處理對象物1表面之從第！ 遮罩板9之開口部所露出了的成膜部處，並如圖7(b) 中所示一般，密著於第2電極層5之成膜部地而形成作爲 第1保護膜6之SiN的薄膜。 本發明之第1保護膜6，只要是在化學構造中含有Si 之無機物，則並不被限定於SiN，亦可從原料氣體源43 而放出SiH4氣體和NH3氣體以及氧化氮（n2〇)氣體之 混合氣體，並密著於第2電極層5之成膜部地來形成 SiON之薄膜。 又，亦可從原料氣體源43放出SiH4氣體和N20氣體 ，並密著於第2電極層5之成膜部地而形成Si〇之薄膜。S -16 - 201230428 The substrate platform 46 and the object 1 are raised together by the platform lifting device 45, and the surface of the object 1 is brought into contact with the back surface of the first mask 9. The decane (SiH4), ammonia (NH3), and nitrogen (N2) gases are discharged from the source gas source 43 to the discharge space 44, and are mixed, and the mixed gas is discharged from the discharge hole 51. When a high-frequency voltage is applied to the electrode frame 47b from the high-frequency power source 48, the mixed gas system discharged from the discharge hole 51 into the vacuum chamber 4 1 is plasma-formed, and a chemical reaction is generated to generate SiN. particle. The particles of SiN produced are attached to the surface of the object 1 to be processed! The film formation portion exposed by the opening of the mask plate 9 is formed as a first protective film 6 in close contact with the film formation portion of the second electrode layer 5 as shown in FIG. 7(b). A film of SiN. The first protective film 6 of the present invention is not limited to SiN as long as it contains an inorganic substance of Si in a chemical structure, and may emit SiH4 gas, NH3 gas, and nitrogen oxide (n2〇) gas from the source gas source 43. The mixed gas is adhered to the film formation portion of the second electrode layer 5 to form a thin film of SiON. Further, SiH 4 gas and N 20 gas may be released from the material gas source 43 and adhered to the film formation portion of the second electrode layer 5 to form a film of Si 。.
SiN，係具備有相較於SiON或SiO而更多地吸收可 視光之性質。故而，若是作爲第1保護膜6，而代替SiN 地來成膜SiON或SiO，則能夠使光透過率提升。 第1保護膜6之厚度’，係預先被作了制訂，在形成了 -17- 201230428 特定厚度之第1保護膜6之後’停止高頻電壓之施加，並 停止原料氣體和反應氣體之放出。 參考圖4，藉由平台升降裝置45而使基板平台46和 處理對象物1—同下降，並使處理對象物1從第1遮罩板 9分離。 一面維持真空槽41內之真空氛圍，一面將處理對象 物1從真空槽41搬出。 參考圖1，藉由第1搬送機器人19，將被成膜有第1 保護膜6之處理對象物1從第1成膜室13a取出，並搬入 至搬入搬出室16中。將此搬送工程，針對在其他之第1 成膜室13b〜13e中而被作了成膜之處理對象物1而亦反 覆地進行。 在將一乃至複數枚之處理對象物1收容在搬入搬出室 16中之後，將搬入搬出室16和第1搬送室12之間的真 空閥關閉。 使惰性氣體流入搬入搬出室16內，並設爲大氣壓。 接著，將搬入搬出室16和裝配室21之間的真空閥開啓。 〈第2遮罩板安裝工程〉 參考圖2，在磁石遮罩投入室22處，係被配置有棚 92。在棚92處，磁石板32和金屬製之第2遮罩板31， 係各被收容有複數枚，並被水平地作保持。 裝配室2 1，於此係具備有上方空間2 1 a和下方空間 21b °SiN has a property of absorbing more visible light than SiON or SiO. Therefore, when SiON or SiO is formed instead of SiN as the first protective film 6, the light transmittance can be improved. The thickness ' of the first protective film 6' is prepared in advance, and after the formation of the first protective film 6 having a specific thickness of -17 to 201230428, the application of the high-frequency voltage is stopped, and the discharge of the material gas and the reaction gas is stopped. With reference to Fig. 4, the platform platform 46 and the object to be processed 1 are lowered by the platform lifting device 45, and the object 1 to be processed is separated from the first mask plate 9. The object to be processed 1 is carried out from the vacuum chamber 41 while maintaining the vacuum atmosphere in the vacuum chamber 41. With reference to Fig. 1, the object to be processed 1 in which the first protective film 6 is formed is taken out from the first film forming chamber 13a by the first transfer robot 19, and carried into the loading/unloading chamber 16. In this case, the object to be processed 1 which is formed in the other first film forming chambers 13b to 13e is also reversed. After one or more of the objects 1 to be processed are housed in the loading/unloading chamber 16, the vacuum valve between the loading/unloading chamber 16 and the first transfer chamber 12 is closed. The inert gas flows into the loading/unloading chamber 16 and is set to atmospheric pressure. Next, the vacuum valve between the loading/unloading chamber 16 and the fitting chamber 21 is opened. <Second Mask Mounting Project> Referring to Fig. 2, a shed 92 is disposed at the magnet mask input chamber 22. In the shed 92, the magnet plate 32 and the metal second mask 31 are housed in a plurality of pieces and held horizontally. Assembly room 2 1, with upper space 2 1 a and lower space 21b °
S -18- 201230428 將收容有磁石板32和第2遮罩板31之棚92, 石遮罩投入室2 2而預先移動至裝配室21之上方空帛 處。 在第2搬送室23處，係被配置有第2搬送機器 。藉由第2搬送機器人91，而將磁石板32從裝配: 之上方空間21a的棚92處取出，並搬入至下方空間 處。 在裝配室2 1之下方空間2 1 b處，係分別被鉛直 起設置有：將第2遮罩板31作保持之遮罩板保持棒 和將處理對象物1作保持之基板保持銷3 6、和將磁 32作保持之磁石板保持棒35。 圖3(a)，係爲在遮罩板保持棒37和基板保持 以及磁石板保持棒35處分別保持有第2遮罩板31和 對象物1以及磁石板32之狀態下的平面圖，圖3(t 爲其之A-A線切斷剖面圖，圖3 ( c )係爲其之B-B 斷剖面圖。在圖3(a)中，遮罩板保持棒37和基板 銷36以及磁石板保持棒35之圖示，係被作省略。 對於第2遮罩板安裝工程作說明。 首先，參考圖2，預先將基板保持銷3 6之上端 罩板保持棒3 7之上端，配置在較磁石板保持棒3 5之 而更低的位置處。藉由第2搬送機器人91，而將磁 3 2從上方空間2 1 a來搬入至下方空間2 1 b處，並載 磁石板保持棒3 5上而作水平保持。 參考圖3(a) 、 （b)，在磁石板32中之分別 從磁 ^ 21a 人91 室21 I 21b 地立 37、 石板 銷36 處理 〇係 線切 保持 和遮 上端 石板 置在 與基 -19- 201230428 板保持銷3 6和遮罩板保持棒3 7相重疊的位置處，係被設 置有磁石板切缺部33，若是使基板保持銷36和遮罩板保 持棒3 7分別上升，則基板保持銷3 6和遮罩板保持棒3 7 係均成爲不會與磁石板32相衝突。將基板保持銷36之上 端配置在較磁石板3 2更高的位置處，並將遮罩板保持棒 37之上端配置在較基板保持銷36之上端更高的位置處。 參考圖1，將處理對象物1從搬入搬出室16而搬入 至裝配室21之下方空間21b處，並參考圖2，將處理對 象物1載置在基板保持銷36上而作水平保持。使基板保 持銷36與處理對象物1—同地下降，並將處理對象物1 載置在磁石板3 2上。 藉由第2搬送機器人91，而將第2遮罩板31從裝配 室21之上方空間21a來搬入至下方空間21b處，並載置 在遮罩板保持棒37上而作水平保持。藉由未圖示之對位 手段，來使第2遮罩板31在水平方向上移動，並且在鉛 直之旋轉軸線的周圍作旋轉，而以使第2遮罩板31之遮 蔽部覆蓋處理對象物1之桌2電極層5的電極拉出部並使 第1保護膜6從第2遮罩板31之開口部而露出的方式， 來進行對位。 在將第2遮罩板31和處理對象物1相互作了對位的 狀態下，使遮罩保持棒37與第2遮罩板31—同下降，並 將第2遮罩板31載置在處理對象物1上。 參考圖3(a) 、（c) ’在第2遮罩板31中之與磁 石板保持棒35相重疊的位置處，係被設置有遮罩板切缺S -18- 201230428 A shed 92 in which the magnet plate 32 and the second mask 31 are housed is placed in the chamber 22 and moved to the upper space of the assembly chamber 21 in advance. In the second transfer chamber 23, a second transfer device is disposed. By the second transfer robot 91, the magnet plate 32 is taken out from the shed 92 of the upper space 21a of the assembly: and is carried into the lower space. In the space 2 1 b below the assembly chamber 2 1 , a mask holding rod for holding the second mask 31 and a substrate holding pin for holding the object 1 are held, respectively. And a magnet plate holding rod 35 holding the magnet 32. Fig. 3 (a) is a plan view showing a state in which the second mask 31, the object 1 and the magnet plate 32 are held by the mask holding rod 37, the substrate holding and the magnet holding rod 35, respectively. (t is a sectional view of the AA line thereof, and Fig. 3(c) is a sectional view of the BB thereof. In Fig. 3(a), the mask holding rod 37 and the substrate pin 36 and the magnet plate holding rod 35 The illustration is omitted. The second mask mounting process will be described. First, referring to Fig. 2, the upper end of the substrate holding pin 36 is held in the upper end of the retaining bar 37, and is placed on the magnet plate. At the lower position of the rod 3, the second transfer robot 91 moves the magnetic material 3 2 from the upper space 2 1 a to the lower space 2 1 b and holds the magnet plate holding rod 3 5 . Referring to Fig. 3 (a), (b), in the magnet plate 32, the yttrium wire is cut and held from the magnetic chamber 21, 21 I 21b, and the slate pin 36, respectively. At a position overlapping the base 19-201230428 plate retaining pin 36 and the mask holding bar 37, a magnet plate cutout portion 33 is provided, if When the substrate holding pin 36 and the mask holding rod 37 are respectively raised, the substrate holding pin 36 and the mask holding rod 3 7 are not in conflict with the magnet plate 32. The upper end of the substrate holding pin 36 is disposed. At a position higher than the magnet plate 3 2, the upper end of the mask holding rod 37 is disposed at a position higher than the upper end of the substrate holding pin 36. Referring to Fig. 1, the object 1 is moved from the loading and unloading chamber. 16 is carried into the space 21b below the assembly chamber 21, and the object to be processed 1 is placed on the substrate holding pin 36 to be horizontally held, and the substrate holding pin 36 is lowered in the same manner as the object to be processed 1 with reference to Fig. 2 . The object to be processed 1 is placed on the magnet plate 3 2. The second mask 31 is carried from the upper space 21a of the mounting chamber 21 to the lower space 21b by the second transfer robot 91, and is carried. The second mask plate 31 is horizontally moved by a positioning means (not shown) and rotated around the vertical axis of rotation, and is held horizontally by the mask holding rod 37. The table 2 electrode of the processing object 1 is covered by the shielding portion of the second mask 31 The electrode extraction portion of the fifth protective film 6 is aligned from the opening of the second mask 31. The second mask 31 and the processing object 1 are paired with each other. In the state of the position, the mask holding rod 37 is lowered together with the second mask 31, and the second mask 31 is placed on the object 1 to be processed. Referring to Fig. 3 (a), (c) ' At a position overlapping the magnet plate holding rod 35 in the second mask 31, a mask is provided for cutting
S -20- 201230428 部34，而成爲就算是使第2遮罩板31下降，第2遮罩板 31亦成爲不會與磁石板保持棒35相衝突。 第2遮罩板31，係藉由從磁石板32而來之磁力（引 力）而被朝向處理對象物1作推壓並作密著，第2遮罩板 31和處理對象物1之間的相對位置關係，係成爲就算是 受到有振動等之外力亦不會起變化。 參考圖2，對於依序層積了磁石板32和處理對象物1 以及第2遮罩板31之狀態的成膜對象物，附加符號1’來 作展示。 藉由第2搬送機器人91’而將成膜對象物1，從裝配 室21之下方空間21b取出，並搬入至第2成膜室24a中 〇 參考圖1’對於被收容在搬入搬出室16內之複數的 處理對象物1’反覆進行上述之第2遮罩板安裝工程，並 將複數之成膜對象物1’依序搬入至第2成膜室24a中。 〈第2保護膜成膜工程〉 對於在第2成膜室24a中之由ALD法所進行的第2 保護膜成膜方法作說明。 參考圖2’ 一面藉由真空排氣部85來將真空槽81內 作真空排氣’一面從洗淨氣體放出部87來作爲洗淨氣體 而放出N2氣體，而預先將真空槽81內設爲大氣壓。 將基板保持部82預先降下至第2搬送機器人91之高 度處。 201230428 將成膜對象物1’搬入至真空槽81內，並配置在基板 保持部82之基板保持空間95內。一面藉由基板保持部升 降裝置89來使基板保持部82作上升或者是下降，一面在 各基板保持空間95內而各配置1枚之成膜對象物1’。 藉由基板保持部升降裝置89來使基板保持部82上升 ，並將各基板保持空間95分別配置在與氣體導入管88之 互爲相異的放出孔90相同高度的位置處。 藉由加熱裝置86而將處理對象物1 ’加熱至80°C。 作爲第1工程，而從原料氣體放出部83以0.1秒以 上5秒以下而放出原料氣體（於此，係放出三甲基鋁（ TMA ))。從各放出孔90而朝向水平方向放出之原料氣 體，係被導入至位於與該放出孔90相同高度處之基板保 持空間95內，原料氣體之分子係被化學吸附在處理對象 物1’之表面上。 在使原料氣體之分子化學吸附在處理對象物1’之表 面上後，將從原料氣體放出部83而來之原料氣體的放出 停止。 接著，作爲第2工程，從洗淨氣體放出部87而放出 洗淨氣體。從各放出孔90所放出之洗淨氣體，係被導入 至基板保持空間95內。藉由洗淨氣體，基板保持空間95 內之壓力係變高，原料氣體係被從基板保持空間95而推 出。被從基板保持空間95而推出並在真空槽81內擴散的 原料氣體，係藉由真空排氣部85而被作真空排氣。 接著，作爲第3工程，而從反應氣體放出部84以0.1 201230428 秒以上5秒以下而放出反應氣體（於此，係放出水蒸氣（ ΙΟ))。從各放出孔90而朝向水平方向放出之反應氣 體，係被導入至位於與該放出孔90相同高度處之基板保 持空間95內，並與附著在處理對象物1’之表面上的原料 氣體之分子起反應，而如圖7(c)中所示一般，密著於 第1保護膜6地而作爲第2保護膜7來形成有氧化鋁（ Al2〇3)之薄膜。第2電極層5之電極拉出部，由於係被 第2遮罩板31之遮蔽部所覆蓋，因此並不會被形成薄膜 〇 在使處理對象物1’之表面的原料氣體之分子與反應 氣體作了反應後，將從反應氣體放出部85而來之反應氣 體的放出停止。 接著，參考圖2’作爲第4工程，從洗淨氣體放出部 87而放出洗淨氣體。從各放出孔90所放出之洗淨氣體， 係被導入至基板保持空間95內。藉由洗淨氣體，基板保 持空間95內之壓力係變高，反應氣體係被從基板保持空 間95而推出。被從基板保持空間95而推出並在真空槽 81內擴散的反應氣體，係藉由真空排氣部85而被作真空 排氣。 亦可依序將上述之第1〜第4工程反覆進行複數次循 環，直到形成所期望之厚度的第2保護膜7爲止。 第2保護膜7，係以1 Onm以上1 〇〇nm以下之厚度爲 理想。若是未滿1 〇nm ’則作爲有機EL元件之密封膜，水 分遮斷性能係爲不足，而若是較1 0 0 n m更厚，則無法得 -23- 201230428 到光透過性。 在上述之ALD法中，相較於第1保護膜形成 PECVD法，由於膜之週邊的附著係爲良好，因此 保護膜7，係將混入至第1保護膜6中之粒子周圍 或針孔亦或是裂痕等之空間作塡埋，而提升保護膜 遮斷性能（密封性能）。 又，ALD法，雖然相較於PECVD法而成膜速 慢，但是，在第2成膜室24a中，由於係對於複數 膜對象物1’而同時地成膜第2保護膜7，因此，相 次1枚地進行成膜，生產性係更加提高。 進而，參考圖1，若是當在其中一方之第2 2 4a處而進行第2保護膜之成膜的期間中，將在裝i 處所組裝了的成膜對象物1’搬入至另外一方之第 室2 4b中，則能夠防止在第2保護膜之成膜中而使 搬送之流程停止的情況。 圖8，係爲第2成膜室24a和第2搬送室23 室25以及磁石遮罩排出室26之內部構成圖。 在結束了第2成膜工程後，在第2搬送室23 槽81內，將基板保持部82下降至第2搬送機器> 高度處。 取出室25，於此係具備有上方空間25a和下 25b。在上方空間25a處，係被配置有棚92’，該拥 係構成爲能夠收容第2遮罩板3 1和磁石板3 2，在 間2 5b處，係被配置有未圖示之卸下裝置，該卸下 工程之 ，第2 的界面 之水分 度爲較 枚之成 較於一 成膜室 妃室21 2成膜 得基板 和取出 之真空 .91之 方空間 丨 92，， 下方空 裝置，In the S -20-201230428 portion 34, even if the second mask 31 is lowered, the second mask 31 does not collide with the magnet holding rod 35. The second mask 31 is pressed against the object 1 by the magnetic force (gravitational force) from the magnet plate 32, and is interposed between the second mask 31 and the object 1 to be processed. The relative positional relationship is such that it does not change even if it is subjected to vibration or the like. Referring to Fig. 2, a film forming object in a state in which the magnet plate 32, the object 1 and the second mask 31 are stacked in this order is attached with a symbol 1'. The film formation object 1 is taken out from the lower space 21b of the mounting chamber 21 by the second transfer robot 91', and is carried into the second film forming chamber 24a, and is housed in the loading/unloading chamber 16 with reference to Fig. 1'. The plurality of processing objects 1' are repeatedly subjected to the above-described second mask mounting process, and a plurality of film forming objects 1' are sequentially carried into the second film forming chamber 24a. <Second Protective Film Forming Process> A second protective film forming method by the ALD method in the second film forming chamber 24a will be described. With reference to Fig. 2', the inside of the vacuum chamber 81 is set as the cleaning gas by the vacuum exhausting portion 85, and the inside of the vacuum chamber 81 is evacuated from the cleaning gas discharge portion 87. Atmospheric pressure. The substrate holding portion 82 is lowered in advance to the height of the second transfer robot 91. 201230428 The film formation object 1' is carried into the vacuum chamber 81 and placed in the substrate holding space 95 of the substrate holding portion 82. One of the film formation objects 1' is disposed in each of the substrate holding spaces 95 while the substrate holding portion 82 is raised or lowered by the substrate holding portion lifting device 89. The substrate holding portion 82 is raised by the substrate holding portion lifting and lowering device 89, and each of the substrate holding spaces 95 is disposed at the same height as the discharge hole 90 of the gas introduction pipe 88 which is different from each other. The object to be treated 1' was heated to 80 °C by the heating device 86. As the first project, the material gas is discharged from the material gas discharge portion 83 for 0.1 second or longer and 5 seconds or shorter (here, trimethylaluminum (TMA) is released). The material gas discharged in the horizontal direction from each of the discharge holes 90 is introduced into the substrate holding space 95 at the same height as the discharge hole 90, and the molecules of the material gas are chemically adsorbed on the surface of the object 1' to be processed. on. After the molecules of the material gas are chemically adsorbed on the surface of the object 1' to be treated, the release of the material gas from the material gas discharge portion 83 is stopped. Next, as the second work, the purge gas is discharged from the purge gas discharge unit 87. The cleaning gas discharged from each of the discharge holes 90 is introduced into the substrate holding space 95. By the cleaning gas, the pressure in the substrate holding space 95 becomes high, and the raw material gas system is pushed out from the substrate holding space 95. The material gas that is pushed out from the substrate holding space 95 and diffused in the vacuum chamber 81 is vacuum-exhausted by the vacuum exhaust unit 85. Then, as a third process, the reaction gas is released from the reaction gas discharge unit 84 at 0.1 201230428 seconds or more and 5 seconds or less (here, water vapor is released). The reaction gas discharged in the horizontal direction from each of the discharge holes 90 is introduced into the substrate holding space 95 at the same height as the discharge hole 90, and the raw material gas adhering to the surface of the object 1' to be processed. As a result of the reaction of the molecules, as shown in FIG. 7(c), a film of alumina (Al 2 〇 3) is formed as the second protective film 7 in close contact with the first protective film 6 . Since the electrode drawing portion of the second electrode layer 5 is covered by the shielding portion of the second mask 31, the film and the reaction of the material gas of the surface of the object 1' are not formed. After the reaction of the gas, the release of the reaction gas from the reaction gas discharge portion 85 is stopped. Next, referring to Fig. 2' as a fourth item, the cleaning gas is discharged from the cleaning gas discharge portion 87. The cleaning gas discharged from each of the discharge holes 90 is introduced into the substrate holding space 95. By the cleaning gas, the pressure in the substrate holding space 95 becomes high, and the reaction gas system is pushed out from the substrate holding space 95. The reaction gas which is pushed out from the substrate holding space 95 and diffused in the vacuum chamber 81 is vacuum-exhausted by the vacuum exhaust unit 85. The first to fourth works described above may be repeatedly repeated in sequence until the second protective film 7 having a desired thickness is formed. The second protective film 7 is preferably 1 Onm or more and 1 〇〇 nm or less. If it is less than 1 〇nm ′, the water-blocking performance is insufficient for the sealing film of the organic EL element, and if it is thicker than 100 n, it is impossible to obtain -23-201230428 to light transmittance. In the ALD method described above, since the PECVD method is formed in comparison with the first protective film, since the adhesion around the film is good, the protective film 7 is mixed around the particles in the first protective film 6 or pinholes. Or the space such as cracks is buried, and the protective film is cut off (sealing performance). Further, in the ALD method, the film formation speed is slower than that of the PECVD method. However, in the second film forming chamber 24a, the second protective film 7 is simultaneously formed on the plurality of film objects 1'. The film formation is performed one by one, and the productivity system is further improved. Furthermore, in the period in which the film formation of the second protective film is performed at the second portion of the second portion, the film formation object 1' assembled at the mounting position is carried to the other one. In the chamber 24b, it is possible to prevent the flow of the conveyance from being stopped during the film formation of the second protective film. Fig. 8 is a view showing the internal structure of the second film forming chamber 24a, the second transfer chamber 23 chamber 25, and the magnet mask discharge chamber 26. After the completion of the second film forming process, the substrate holding portion 82 is lowered to the second transfer device > height in the groove 81 of the second transfer chamber 23. The chamber 25 is taken out, and has an upper space 25a and a lower portion 25b. In the upper space 25a, a shed 92' is disposed, which is configured to be able to accommodate the second mask 31 and the magnet plate 3 2, and is disposed at a position 25 b to be unloaded (not shown). The apparatus, in the unloading process, the moisture content of the second interface is smaller than that of the substrate formed by the film forming chamber chamber 21 2 and the space of the vacuum taken out of the space 91, 92, the lower space device ,
S -24- 201230428 係將成膜對象物丨’分離成磁石板32和處理對象物1以及 第2遮罩板31。 藉由第2搬送機器人91，而將成膜對象物丨，從第2 成膜室24a取出，並搬入至取出室25之下方空間25b中 〇 在下方空間25b處’係藉由卸下裝置，而將已使用了 的第2遮罩板31從處理對象物1卸下。接著，藉由第2 搬送機器人91’而將被卸下了的第2遮罩板31收容在被 配置於上方空間25a處之棚92,中。 接著’在下方空間25b處，係藉由卸下裝置，而將處 理對象物1從磁石板32來作舉升，參考圖丨，處理對象 物1係被搬送至後工程室27處。 參考圖2’藉由第2搬送機器人91，而將殘留於下方 空間25b處之磁石板32，收容在上方空間25a之棚92,中 〇 將收容有已作了使用的第2遮罩板31和磁石板32之 棚92’’從取出室25而搬出至磁石遮罩排出室26處，並 移送至清淨工程。 若依據本發明，則從開始密著於第2電極層5地來進 行第1保護膜6之成膜時起，直到密著於第1保護膜6地 所進行之第2保護膜7之成膜結束爲止的期間中，係進行 真空一貫處理，亦即是並不使處理對象物1暴露於外氣中 。故而’係並不會發生在第2保護膜7之成膜前而於第1 保護膜6之表面上附著有外部大氣之粒子的情況，相較於 -25- 201230428 暴露在外部大氣中之情況，係能夠以更高之密著性來成膜 第2保護膜7，並提升保護膜之密封性能》 〈第1保護膜成膜工程之第2例〉 本發明之第1保護膜6的成膜，係並不被限定於上述 之PECVD法，而亦可藉由濺鍍法來進行成膜。 圖5，係爲第1成膜室13a之第2例的內部構成圖。 此第1成膜室13a，係具備有真空槽61、和基板平台 66、以及祀材保持板63。 基板平台66，係被配置在真空槽61內，並以能夠在 朝向上方之面上保持處理對象物1的方式而構成之。 靶材保持板63，係被配置在基板平台66之上方，在 與基板平台66相對面之表面處，係被固定有平板形狀之 IG 材 6 4。 在靶材保持板63處，係被電性連接有高頻電源68, 並構成爲能夠對於靶材保持板63施加高頻電壓。 在靶材保持板63和基板平台66之間，係被配置有遮 罩保持部69，該遮罩保持部69，係構成爲能夠將第1遮 罩板9水平地作保持。 在基板平台66之下方，係被配置有平台升降裝置65 ，並構成爲能夠使基板平台66與處理對象物1 一同地而 沿著鉛直方向移動。若是使基板平台66上升，則基板平 台66上之處理對象物1的表面係朝被保持在遮罩保持部 69上之第1遮罩板9的背面接近並作接觸，若是使基板S-24-201230428 separates the film formation object 丨' into the magnet plate 32, the object to be processed 1, and the second mask 31. By the second transfer robot 91, the film formation target is taken out from the second film forming chamber 24a, and carried into the lower space 25b of the take-out chamber 25, and is detached from the lower space 25b. The second mask 31 that has been used is detached from the object 1 to be processed. Then, the second mask 31 that has been removed is housed in the shed 92 disposed in the upper space 25a by the second transport robot 91'. Then, in the lower space 25b, the object to be processed 1 is lifted from the magnet plate 32 by the unloading device, and the object to be processed 1 is transported to the rear working chamber 27 with reference to Fig. Referring to Fig. 2', the magnet plate 32 remaining in the lower space 25b is housed in the shed 92 of the upper space 25a, and the second mask 31 that has been used is accommodated in the middle. The shed 92'' of the magnet plate 32 is carried out from the take-out chamber 25 to the magnet mask discharge chamber 26 and transferred to the cleaning process. According to the present invention, the second protective film 7 is formed by adhering to the first protective film 6 from the time when the first protective film 6 is formed in the second electrode layer 5. In the period from the end of the film, the vacuum treatment is performed, that is, the object 1 to be treated is not exposed to the outside air. Therefore, the case where the particles of the external atmosphere adhere to the surface of the first protective film 6 before the film formation of the second protective film 7 does not occur, and is exposed to the outside atmosphere as compared with -25-201230428. The second protective film 7 can be formed with higher adhesion, and the sealing performance of the protective film can be improved. <The second example of the first protective film forming process> The first protective film 6 of the present invention is formed. The film is not limited to the above-described PECVD method, and may be formed by sputtering. FIG. 5 is an internal configuration diagram of a second example of the first film forming chamber 13a. The first film forming chamber 13a is provided with a vacuum chamber 61, a substrate stage 66, and a coffin holding plate 63. The substrate stage 66 is disposed in the vacuum chamber 61, and is configured to be capable of holding the object 1 to be processed on the upward facing surface. The target holding plate 63 is disposed above the substrate stage 66, and a flat plate-shaped IG material 64 is fixed on the surface opposite to the substrate stage 66. A high-frequency power source 68 is electrically connected to the target holding plate 63, and is configured to be capable of applying a high-frequency voltage to the target holding plate 63. Between the target holding plate 63 and the substrate stage 66, a mask holding portion 69 is disposed, and the mask holding portion 69 is configured to be able to hold the first mask 9 horizontally. Below the substrate stage 66, a platform lifting device 65 is disposed, and the substrate stage 66 can be moved in the vertical direction together with the object 1 to be processed. When the substrate stage 66 is raised, the surface of the object 1 to be processed on the substrate stage 66 is brought into contact with the back surface of the first mask 9 held by the mask holding portion 69, and the substrate is brought into contact.
S 26- 201230428 平台66下降，則處理對象物1係從第1遮罩板9而分離 〇 在真空槽61處，係被連接有氣體導入裝置67，並構 成爲能夠將氣體導入至內部。又，在真空槽61處，係被 連接有真空排氣裝置62，並構成爲能夠將內部作真空排 氣。 針對使用此第2例之第1成膜室1 3 a所進行之由濺鍍 法所致之第1保護膜成膜方法作說明。 藉由真空排氣裝置62而對真空槽61內作真空排氣， 之後，持續進行真空排氣，而維持真空槽61內之真空氛 圍。 在靶材保持部63處，係預先被安裝有Si之靶材64 〇 使基板平台66下降，而使其從被保持在遮罩保持部 69處之第1遮罩板9分離》 將處理對象物1搬入至真空槽61內，並以使第2電 極層5朝向上方的朝向來載置於基板平台66上。 藉由未圖示之對位手段，來使基板平台66與處理對 象物1 一同地在水平方向上移動，並且在鉛直之旋轉軸線 的周圍作旋轉’而以使第1遮罩板9之遮蔽部覆蓋處理對 象物1之第2電極層5的電極拉出部並使第2電極層5之 成膜部從第1遮罩板9之開口部而露出的方式，來進行對 位。 對位手段’係亦可構成爲使第1遮罩板9在水平方向 -27- 201230428 上移動並且在鉛直之旋轉軸線的周圍作旋轉’而對於靜止 了的處理對象物1進行對位。 在使處理對象物1和第1遮罩板9作了對位的狀態下 ，藉由平台升降裝置65而使基板平台66和處理對象物1 —同上升，並使處理對象物1之表面和第1遮罩板9之背 面作接觸。 從氣體導入裝置67而將N2氣體和Ar氣體之混合氣 體放出至真空槽61內。 若是從高頻電源68而對於靶材保持板63施加高頻電 壓，貝U Ar '氣體係電漿化，Ar離子係射入靶材64，並將 Si之粒子從靶材64而彈飛。 從靶材64所放出之Si的粒子，係與N2氣體起反應 ，並產生SiN，所產生了的SiN之粒子，係到達並附著在 處理對象物1表面之第2電極層5中的從第1遮罩板9之 開口部所露出了的成膜部處，而密著於成膜部地形成作爲 第1保護膜6之SiN的薄膜。 本發明之第1保護膜6，只要是在化學構造中含有Si 之無機物，則並不被限定於SiN，亦可從氣體導入裝置67 而放出〇2氣體和N2氣體以及Ar氣體之混合氣體，並密 著於第2電極層5之成膜部地來形成SiON之薄膜。 又，亦可從氣體導入裝置67放出〇2氣體和Ar氣體 之混合氣體，並密著於第2電極層5之成膜部地而形成 Si〇之薄膜。 在形成了特定厚度之第1保護膜6之後，停止高頻電S 26 - 201230428 When the platform 66 is lowered, the object 1 to be processed is separated from the first mask 9 〇 In the vacuum chamber 61, the gas introduction device 67 is connected, and the gas can be introduced into the inside. Further, a vacuum exhaust unit 62 is connected to the vacuum chamber 61, and the inside can be evacuated. The first protective film forming method by the sputtering method performed by the first film forming chamber 13a of the second example will be described. The inside of the vacuum chamber 61 is evacuated by the vacuum exhausting means 62, and then vacuum evacuation is continued to maintain the vacuum atmosphere in the vacuum chamber 61. At the target holding portion 63, the target 64 of the Si is attached in advance, and the substrate stage 66 is lowered to be separated from the first mask 9 held by the mask holding portion 69. The object 1 is carried into the vacuum chamber 61 and placed on the substrate stage 66 with the second electrode layer 5 facing upward. The substrate stage 66 is moved in the horizontal direction together with the object to be processed 1 by means of a positioning means (not shown), and is rotated around the vertical axis of rotation to shield the first mask 9 The electrode-drawing portion of the second electrode layer 5 covering the object 1 is placed so that the film formation portion of the second electrode layer 5 is exposed from the opening of the first mask plate 9. The aligning means may be configured such that the first masking plate 9 is moved in the horizontal direction -27 - 201230428 and rotated around the vertical axis of rotation to align the stationary object 1 to be processed. When the object to be processed 1 and the first mask 9 are aligned, the platform platform 66 and the object 1 are lifted by the platform lifting and lowering device 65, and the surface of the object 1 is processed. The back surface of the first mask 9 is in contact. The mixed gas of N2 gas and Ar gas is discharged from the gas introduction device 67 into the vacuum chamber 61. When a high-frequency voltage is applied to the target holding plate 63 from the high-frequency power source 68, the Bayer system is plasma-formed, the Ar ions are incident on the target 64, and the particles of Si are ejected from the target 64. The particles of Si emitted from the target 64 react with the N 2 gas to generate SiN, and the generated particles of SiN reach and adhere to the second electrode layer 5 on the surface of the object 1 to be processed. A film formed by the opening portion of the mask 9 and having a SiN film as the first protective film 6 adhered to the film formation portion. The first protective film 6 of the present invention is not limited to SiN as long as it contains an inorganic substance of Si in a chemical structure, and a gas mixture of 〇2 gas and N2 gas and Ar gas may be released from the gas introduction device 67. A film of SiON is formed in close contact with the film formation portion of the second electrode layer 5. Further, a gas mixture of 〇2 gas and Ar gas is discharged from the gas introduction device 67, and a film of Si 形成 is formed by adhering to the film formation portion of the second electrode layer 5. After forming the first protective film 6 of a specific thickness, stopping the high frequency electricity
S 28- 201230428 壓之施加，並停止濺鍍氣體和反應氣體之放出。 藉由平台升降.裝置65而使基板平台66下降，並使處 理對象物1從第1遮罩板9分離》 一面維持真空槽66內之真空氛圍，一面將處理對象 物1從真空槽61搬出。 由於在濺鍍法中，從靶材64所放出之粒子的運動量 係較藉由PECVD法所產生之粒子的運動量更大，當此粒 子與處理對象物1相碰撞時，會有對於處理對象物1之層 構造造成損傷之虞，因此，相較於濺鍍法，係以藉由 PECVD法來成膜第1保護膜6爲更理想。 〈成膜方法之第2例〉 如同上述一般，在有機EL元件之保護膜的形成工程 中，係有必要使第2電極層5中之電極拉出部從保護膜而 露出，但是，其方法，係並不被限定於如同上述一般之在 藉由第2遮罩板31之遮蔽部而將第2電極層5之電極拉 出部作了覆蓋的狀態下來藉由ALD法而成膜第2保護膜 7之方法。 圖9，係對於成膜裝置1〇’之第2例的平面圖作展示 〇 在此第2例之成膜裝置1〇’中，係從上述之第1例的 成膜裝置1 〇而削除了裝配室2 1和遮罩投入室22和取出 室25以及磁石遮罩排出室26，並追加了待機室28和蝕 刻室2 9。 -29- 201230428 搬 程 被 在 並 並 號 7 5 而 平 部 板 離 並 處 作 前工程室11、和反轉室14、和第1搬送室12、和 入搬出室16、和第2搬送室23、和待機室28、和後工 室27，係依此順序而被串聯地作連接。蝕刻室29，係 與待機室28作連接。 圖1 〇，係對於蝕刻室29之內部構成圖作展示。 蝕刻室29，係具備有：真空槽71、和基板平台76 和遮罩保持部79、以及濺鍍氣體導入裝置77。 基板平台76，係被配置在真空槽71內，並以能夠 朝向上方之面上保持處理對象物1的方式而構成之。 在基板平台76處，係被電性連接有高頻電源78， 構成爲能夠對於基板平台76施加高頻電壓。 遮罩保持部79，係被配置在基板平台76之上方， 以能夠將第3遮罩板作水平保持的方式而構成之。符 73’係代表被保持在遮罩保持部79處之第3遮罩板。 在基板平台76之下方，係被配置有平台升降裝置 ，並構成爲能夠使基板平台76與處理對象物1 一同地 沿著鉛直方向移動。若是使基板平台7 6上升，則基板 台76上之處理對象物1的表面係朝被保持在遮罩保持 79上之第3遮罩板73的背面接近並作接觸，若是使基 平台76下降’則處理對象物1係從第3遮罩板73而分 〇 濺鍍氣體導入裝置77，係被與真空槽ή作連接， 構成爲能夠將濺鍍氣體導入至內部。又，在真空槽71 ’係被連接有真空排氣裝置72，並構成爲能夠將內部S 28- 201230428 Pressing the pressure and stopping the discharge of the sputtering gas and the reaction gas. By lowering the substrate platform 66 by the platform lifting and lowering device 65 and separating the object 1 from the first mask 9 while maintaining the vacuum atmosphere in the vacuum chamber 66, the object 1 is carried out from the vacuum chamber 61. . In the sputtering method, the amount of movement of the particles released from the target 64 is larger than the amount of movement of the particles generated by the PECVD method, and when the particles collide with the object 1 to be processed, there is a problem with the object to be treated. Since the layer structure of 1 causes damage, it is more preferable to form the first protective film 6 by the PECVD method than the sputtering method. <Second Example of Film Forming Method> As described above, in the formation process of the protective film of the organic EL element, it is necessary to expose the electrode drawing portion of the second electrode layer 5 from the protective film. The second method is not limited to the case where the electrode drawing portion of the second electrode layer 5 is covered by the shielding portion of the second mask 31 as described above, and the film is formed by the ALD method. A method of protecting the film 7. Fig. 9 is a plan view showing a second example of the film forming apparatus 1', in which the film forming apparatus 1' of the second example is removed from the film forming apparatus 1 of the first example described above. The assembly chamber 21 and the mask input chamber 22 and the take-out chamber 25 and the magnet mask discharge chamber 26 are added with a standby chamber 28 and an etching chamber 29. -29- 201230428 The moving part is separated from the flat section and is used as the front working room 11, the reversing room 14, and the first transfer room 12, and the loading and unloading room 16, and the second transfer room. 23. The standby room 28 and the rear work chamber 27 are connected in series in this order. The etching chamber 29 is connected to the standby chamber 28. Fig. 1 is a view showing the internal structure of the etching chamber 29. The etching chamber 29 is provided with a vacuum chamber 71, a substrate stage 76, a mask holding portion 79, and a sputtering gas introduction device 77. The substrate stage 76 is disposed in the vacuum chamber 71, and is configured to hold the object 1 to be processed on the upper surface. A high-frequency power source 78 is electrically connected to the substrate stage 76, and is configured to be capable of applying a high-frequency voltage to the substrate stage 76. The mask holding portion 79 is disposed above the substrate stage 76 so as to be capable of horizontally holding the third mask. The symbol 73' represents the third mask that is held at the mask holding portion 79. Below the substrate stage 76, a platform lifting device is disposed, and the substrate stage 76 can be moved in the vertical direction together with the object 1 to be processed. When the substrate stage 76 is raised, the surface of the object 1 to be processed on the substrate stage 76 approaches and contacts the back surface of the third mask 73 held by the mask holder 79, and if the base platform 76 is lowered The object to be processed 1 is branched from the third mask 73, and is connected to the vacuum chamber, and is connected to the vacuum chamber so that the sputtering gas can be introduced into the inside. Further, a vacuum exhaust device 72 is connected to the vacuum chamber 71', and is configured to be capable of internalizing
S -30- 201230428 真空排氣。 針對使用有此第2例之成膜裝置10’的成膜方法作說 明。 參考圖9，與上述之第1保護膜成膜工程相同的，藉 由第1成膜室13a〜13e而成膜第1保護膜6。此時，由 於係在將處理對象物1之第2電極層5的電極拉出部藉由 第1遮罩板9之遮蔽部來作了覆蓋的狀態下，而進行成膜 ，因此，係密著於第2電極層5之成膜部地而成膜第1保 護膜6，但是，在第2電極層5之電極拉出部處，係並未 被成膜有第1保護膜6。 在結束了第1成膜工程之後，與第1例之成膜方法相 同的，而將處理對象物從第1成膜室13a〜13e搬出，並 搬入至搬入搬出室16中，而將第1搬送室12和搬入搬出 室16之間的真空閥關閉，並將搬入搬出室16內設爲大氣 壓。 將被收容在搬入搬出室16內之一乃至複數枚的處理 對象物1，並不安裝第2遮罩板31地而藉由第2搬送機 器人91來搬入至第2成膜室24a、24b中。亦即是，係與 第1例之成膜方法相異，而並不進行第2遮罩板安裝工程 〇 接著，與上述之第2保護膜成膜工程相同的，藉由第 2成膜室24a、2 4b而成膜第2保護膜7。 第2電極層5之電極拉出部份，係並未被第2遮罩板 31之遮蔽部所覆蓋，第2保護膜7，係密著於第1保護膜 -31 - 201230428 6和第2電極層5之電極拉出部的雙方地被作成膜。 在結束了第2成膜工程之後，將處理對象物從第2成 膜室2“、24b搬出，並搬入至待機室28中。 接著，將第2搬送室23和待機室28之間的真空閥關 閉，並將待機室28內作真空排氣而設爲真空氛圍。 如同後述一般，將蝕刻室29內預先設爲真空氛圍。 將待機室28和蝕刻室29之間的真空閥開啓，並將處理對 象物1搬入至蝕刻室29中。 參考圖10，針對蝕刻室29處之第2保護膜除去方法. 作說明》 藉由真空排氣裝置72而對真空槽71內作真空排氣， 之後，持續進行真空排氣，而維持真空槽71內之真空氛 圍。 在遮罩保持部79處，係預先被安裝有第3遮罩板73 。使基板平台76下降，而使其從第3遮罩板73分離。 將處理對象物1搬入至真空槽71內，並以使第2保 護膜7朝向上方的朝向來載置於基板平台76上。 藉由未圖示之對位手段，來使基板平台76與處理對 象物1 —同地在水平方向上移動，並且在鉛直之旋轉軸線 的周圍作旋轉，而以使第3遮罩板73之遮蔽部覆蓋第2 保護膜7中的與第1保護膜6相重疊的範圍，並使第2保 護膜7中的與第2電極層5之成膜部相重疊的範圍從第3 遮罩板7 3之開口部而露出的方式，來進行對位。 對位手段，係亦可構成爲使第3遮罩板73在水平方 -32- 201230428 向上移動並且在鉛直之旋轉軸線的周圍作旋轉，而對於靜 止了的處理對象物1進行對位。 在使處理對象物1和第3遮罩板73作了對位的狀態 下，藉由平台升降裝置75而使基板平台76和處理對象物 1 —同上升，並使處理對象物1之表面和第3遮罩板73 之背面作接觸。 從濺鍍氣體導入裝置77而作爲濺鏟氣體來將Ar氣體 放出至真空槽71內。 若是從高頻電源78而對於基板平台76施加高頻電壓 ，則Ar氣體係電漿化，Ar離子係射入至處理對象物1之 第2保護膜7中的從第3遮罩板73之開口部所露出的範 圍，並對於第2保護膜7進行蝕刻。 若是第2保護膜7被鈾刻，則第2電極層5之電極拉 出部份係露出。第2保護膜7中之與第1保護膜6相重疊 的範圍，由於係被第3遮罩板73之遮蔽部所覆蓋，因此 係並不會被蝕刻，第1保護膜6係並不會露出。 在使第2電極層5之電極拉出部份露出之後，停止高 頻電壓之施加，並停止濺鍍氣體之導入》 藉由平台升降裝置75而使基板平台76下降，並使處 理對象物1從第3遮罩板73分離。 一面維持真空槽71內之真空氛圍，一面將處理對象 物1從真空槽71搬出。 參考圖9，將蝕刻室29和待機室28之間的真空閥關 閉，之後，使惰性氣體流入待機室2 8內，而設爲大氣壓 -33- 201230428 。將待機室28和後工程室27之間的真空閥開啓’並將處 理對象物1從待機室28搬送後工程室27中。 [實施例] 密著於聚亞醯胺薄膜（於此’係爲Kapton (登記商 標）之薄膜）地，而藉由PECVD法來將SiN膜以l#m 之厚度來作了成膜’之後，密著於SiN膜地’而藉由 ALD法來將Al2〇3膜以100nm之厚度而進行成膜，並作 成了第1試料。 又，密著於其他之薄膜地，而藉由PECVD法來將 SiN膜以1/zm之厚度來作了成膜，之後，密著於SiN膜 地，而藉由ALD法來將Al2〇3膜以50nm之厚度而進行成 膜，並作成了第2試料。 又，密著於其他之薄膜地，而藉由 PECVD法來將 SiN膜以2 a m之厚度來作了成膜，之後，密著於SiN膜 地，而藉由ALD法來將Al2〇3膜以lOOum之厚度而進行 成膜，並作成了第_3試料。 又，密著於其他之薄膜地，而藉由PECVD法來將 SiN膜以2 " m之厚度來作了成膜，之後，密著於SiN膜 地，而藉由ALD法來將Al2〇3膜以50nm之厚度而進行成 膜，並作成了第4試料。 又，密著於其他之薄膜地，而藉由PECVD法來將 SiN膜以1 // m之厚度來作了成膜，之後，先將此處理對 象物暴露在外部大氣中，之後密著於SiN膜地，而藉由 -34-S -30- 201230428 Vacuum exhaust. A film forming method using the film forming apparatus 10' of the second example will be described. Referring to Fig. 9, the first protective film 6 is formed by the first film forming chambers 13a to 13e in the same manner as the above-described first protective film forming process. In this case, since the electrode drawing portion of the second electrode layer 5 of the processing target 1 is covered by the shielding portion of the first mask 9 to form a film, the film is densely formed. The first protective film 6 is formed on the film forming portion of the second electrode layer 5, but the first protective film 6 is not formed in the electrode drawing portion of the second electrode layer 5. After the completion of the first film formation process, the object to be processed is carried out from the first film forming chambers 13a to 13e, and is carried into the loading/unloading chamber 16 in the same manner as the film forming method of the first example, and the first one is placed. The vacuum valve between the transfer chamber 12 and the loading/unloading chamber 16 is closed, and the inside of the loading/unloading chamber 16 is set to atmospheric pressure. The object 1 to be processed, which is contained in one of the loading and unloading chambers 16 and the plurality of processing objects 1 , is carried into the second film forming chambers 24 a and 24 b by the second transfer robot 91 without attaching the second mask 31 . . That is, unlike the film forming method of the first example, the second mask mounting process is not performed, and then the second film forming chamber is the same as the second protective film forming process described above. The second protective film 7 is formed by 24a and 24b. The electrode drawing portion of the second electrode layer 5 is not covered by the shielding portion of the second mask 31, and the second protective film 7 is adhered to the first protective film -31 - 201230428 6 and 2 Both of the electrode drawing portions of the electrode layer 5 are formed into a film. After the completion of the second film forming process, the object to be processed is carried out from the second film forming chambers 2 and 24b, and is carried into the standby chamber 28. Next, the vacuum between the second transfer chamber 23 and the standby chamber 28 is performed. The valve is closed, and the inside of the standby chamber 28 is evacuated to be a vacuum atmosphere. As will be described later, the inside of the etching chamber 29 is previously set to a vacuum atmosphere. The vacuum valve between the standby chamber 28 and the etching chamber 29 is opened, and The object to be processed 1 is carried into the etching chamber 29. Referring to Fig. 10, the second protective film removal method at the etching chamber 29 is described. The vacuum evacuation device 72 vacuum-vacuates the inside of the vacuum chamber 71. Thereafter, vacuum evacuation is continued to maintain the vacuum atmosphere in the vacuum chamber 71. At the mask holding portion 79, the third mask 73 is attached in advance. The substrate stage 76 is lowered to make it from the third The mask plate 73 is separated. The object to be processed 1 is carried into the vacuum chamber 71, and placed on the substrate platform 76 in such a manner that the second protective film 7 faces upward. The substrate platform 76 is moved in the horizontal direction in the same manner as the object to be processed 1 And rotating around the vertical axis of rotation so that the shielding portion of the third mask 73 covers the range of the second protective film 7 overlapping the first protective film 6, and the second protective film 7 is provided. The range overlapping with the film formation portion of the second electrode layer 5 is aligned from the opening of the third mask plate 73. The alignment means may be configured to make the third cover The cover plate 73 moves upward in the horizontal direction -32 - 201230428 and rotates around the vertical axis of rotation, and aligns the object 1 to be processed. The object to be processed 1 and the third mask 73 are made. In the state of the alignment, the substrate platform 76 and the object to be processed 1 are lifted together by the platform lifting and lowering device 75, and the surface of the object to be processed 1 is brought into contact with the back surface of the third mask 73. The gas introduction device 77 releases the Ar gas into the vacuum chamber 71 as a shovel gas. When a high-frequency voltage is applied to the substrate stage 76 from the high-frequency power source 78, the Ar gas system is plasma-formed, and the Ar ion is injected into the gas. The opening from the third mask 73 in the second protective film 7 of the object 1 is processed. In the exposed range, the second protective film 7 is etched. When the second protective film 7 is etched by uranium, the electrode drawn portion of the second electrode layer 5 is exposed. The first protective film 7 and the first protective layer 7 Since the range in which the film 6 overlaps is covered by the shielding portion of the third mask 73, the first protective film 6 is not exposed, and the electrode of the second electrode layer 5 is not exposed. After the pull-out portion is exposed, the application of the high-frequency voltage is stopped, and the introduction of the sputtering gas is stopped. The platform platform 76 is lowered by the platform lifting device 75, and the object 1 to be processed is separated from the third mask 73. The object to be processed 1 is carried out from the vacuum chamber 71 while maintaining the vacuum atmosphere in the vacuum chamber 71. Referring to Fig. 9, the vacuum valve between the etching chamber 29 and the standby chamber 28 is closed, and then the inert gas is caused to flow into the standby chamber 28 to be set to atmospheric pressure -33 - 201230428. The vacuum valve between the standby chamber 28 and the rear engineering chamber 27 is opened, and the processing object 1 is transported from the standby chamber 28 to the rear engineering chamber 27. [Examples] After being coated with a polyimide film (herein a film of Kapton (registered trademark)), a SiN film was formed into a film by a thickness of 1 #m by a PECVD method. The Al2〇3 film was formed into a film having a thickness of 100 nm by an ALD method, and the first sample was prepared. Further, the SiN film was formed by a PECVD method at a thickness of 1/zm, and then adhered to the SiN film, and Al2〇3 was formed by an ALD method. The film was formed into a film at a thickness of 50 nm, and a second sample was prepared. Further, the SiN film was formed by a PECVD method at a thickness of 2 mm, and then adhered to the SiN film, and the Al2〇3 film was formed by an ALD method. Film formation was carried out at a thickness of 100 μm, and a _3 sample was prepared. Further, the SiN film was formed into a film by a PECVD method at a thickness of 2 " m, and then adhered to the SiN film, and Al2 was formed by an ALD method. 3 The film was formed into a film at a thickness of 50 nm, and a fourth sample was prepared. Further, the SiN film was formed into a film by a PECVD method at a thickness of 1 // m, and then the object to be treated was exposed to the outside atmosphere, and then adhered to the film. SiN film ground, with -34-
S 201230428 ALD法來將A1z03膜以1 OOnm之厚度而進行成膜，並作 成了第5試料。 又，密著於其他之薄膜地，而藉由PECVD法來將 SiN膜以1 // m之厚度而進行成膜，而作成了比較試料。 針對第1〜第5試料以及比較試料，藉由紅外感測法 (MOCON法）來對於水蒸氣透過度（g/m2/day )作了測 定。水蒸氣透過度，係於JIS K7129: 2008中有所規定， 紅外感測法，係於JIS K7129: 2008附屬篇B中有所規定 〇 將測定結果統籌展示於表1中。 [表1] 表1水蒸氣透過度測定結果 樣本 透濕測定結果 (g/m2/day) SiN: 1 Atm成膜 （比較試料） 0.03 SiN:lMm 成膜+Al2〇3:100nm (第一試料） 0.005 SiM:1/xm成膜+Al2〇3:50nm (第二試料） 0.008 成膜+Al2〇3:100nm (第三試料） 0.001 SiN:2/im成膜+Al2〇3:50nm (第四試料） 0.003 S i N: 1 μm 成膜 + A12〇3:1 OOnm r 笛石劫物、 (在SiN成膜後，一度作大氣開放）（弟11試科） 0.007 若是對於第1〜第5試料之測定結果和比較試料之測 定結果作比較，則可以發現到，藉由以A L D法來密著於 SiN薄膜地而層積Al2〇3之薄膜，水蒸氣透過度係降低， 亦即是水分遮斷性能係提升。 -35- 201230428 進而’若是對於第1試料之測定結果和第5試料之測 定結果作比較’則可以發現到，藉由將S i N膜之成膜和 A120 3膜之成膜，並不暴露在大氣中地而進行真空一貫處 理，相較於在途中而暴露於大氣中的情況，水分遮斷性能 係更加提升。 【圖式簡單說明】 [圖1]本發明之成膜裝置的第1例之平面圖。 [圖2]第2成膜室和第2搬送室和裝配室以及磁石遮 罩投入室之內部構成圖。 [圖3] (a)遮罩板和處理對象物以及磁石板之平面圖 ，（b)其A-A線之切斷剖面圖，（c)其B-B線之切斷 剖面圖。 [圖4]第1成膜室的第1例之內部構成圖。 [圖5]第1成膜室的第2例之內部構成圖。 [圖6] (a) 、( b ):基板保持部的其他例之內部側 面圖。 [圖7](a)〜（c):處理對象物之剖面圖。 [圖8]第2成膜室和第2搬送室和取出室以及磁石遮 罩排出室之內部構成圖。 [圖9]本發明之成膜裝置的第2例之平面圖。 [圖10]蝕刻室之內部構成圖。 【主要元件符號說明】S 201230428 ALD method The A1z03 film was formed into a film at a thickness of 100 nm, and a fifth sample was prepared. Further, the SiN film was formed into a film by a PECVD method at a thickness of 1 // m while being adhered to another film, and a comparative sample was prepared. The water vapor transmission degree (g/m2/day) was measured by the infrared sensing method (MOCON method) for the first to fifth samples and the comparative sample. The water vapor transmission rate is specified in JIS K7129: 2008, and the infrared sensing method is specified in JIS K7129: 2008 Attachment B. 测定 The measurement results are collectively shown in Table 1. [Table 1] Table 1 Water vapor permeability measurement results Sample moisture permeability measurement results (g/m2/day) SiN: 1 Atm film formation (comparative sample) 0.03 SiN: 1Mm Film formation + Al2〇3: 100 nm (First sample) ) 0.005 SiM: 1/xm film formation + Al2 〇 3: 50 nm (second sample) 0.008 film formation + Al 2 〇 3: 100 nm (third sample) 0.001 SiN: 2 / im film formation + Al 2 〇 3: 50 nm ( Four samples) 0.003 S i N: 1 μm Film formation + A12〇3:1 OOnm r Dessert, (after SiN film formation, once opened to the atmosphere) (Dire 11 test) 0.007 For the first to the first (5) When the measurement result of the sample is compared with the measurement result of the comparative sample, it is found that the film of Al2〇3 is laminated by adhering to the SiN film by the ALD method, and the water vapor transmission rate is lowered, that is, The moisture occlusion performance is improved. -35- 201230428 Further, if the results of the measurement of the first sample and the measurement result of the fifth sample are compared, it can be found that the film formation of the S i N film and the film formation of the A120 3 film are not exposed. The vacuum treatment is carried out in the atmosphere, and the moisture blocking performance is further improved as compared with the case where it is exposed to the atmosphere on the way. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a first example of a film forming apparatus of the present invention. Fig. 2 is a view showing the internal structure of the second film forming chamber, the second transfer chamber, the mounting chamber, and the magnet cover input chamber. [Fig. 3] (a) plan view of the mask, the object to be processed, and the magnet plate, (b) a cut-away sectional view taken along line A-A, and (c) a cut-away view of the line B-B. Fig. 4 is a view showing the internal structure of a first example of the first film forming chamber. Fig. 5 is a view showing the internal structure of a second example of the first film forming chamber. Fig. 6 (a) and (b) are internal side views of other examples of the substrate holding portion. Fig. 7 (a) to (c) are cross-sectional views of the object to be processed. Fig. 8 is a view showing the internal structure of the second film forming chamber, the second transfer chamber, the take-out chamber, and the magnet shield discharge chamber. Fig. 9 is a plan view showing a second example of the film forming apparatus of the present invention. Fig. 10 is a view showing the internal structure of an etching chamber. [Main component symbol description]
S -36- 201230428 1 :處理對象物 2 :基板 3 :第1電極層 4 :有機層 5 :第2電極層 6 :第1保護膜 7 :第2保護膜 1 〇 :成膜裝置 1 3 a〜1 3 e :第1成膜室 24a、24b :第2成膜室 81 :第2成膜室之真空槽 82 :基板保持部 83 :原料氣體放出部 84 =反應氣體放出部 85:第2成膜室之真空排氣部 8 6 :加熱裝置 -37-S -36-201230428 1 : Processing target 2 : Substrate 3 : First electrode layer 4 : Organic layer 5 : Second electrode layer 6 : First protective film 7 : Second protective film 1 〇 : Film forming apparatus 1 3 a 〜1 3 e : first film forming chambers 24a and 24b: second film forming chamber 81: vacuum chamber 82 of the second film forming chamber: substrate holding portion 83: material gas releasing portion 84 = reaction gas releasing portion 85: second Vacuum exhaust part of film forming chamber 8 6 : heating device -37-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010212859 | 2010-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201230428A true TW201230428A (en) | 2012-07-16 |
Family
ID=45873799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100133214A TW201230428A (en) | 2010-09-22 | 2011-09-15 | Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2012039310A1 (en) |
| TW (1) | TW201230428A (en) |
| WO (1) | WO2012039310A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9023693B1 (en) | 2013-11-27 | 2015-05-05 | Industrial Technology Research Institute | Multi-mode thin film deposition apparatus and method of depositing a thin film |
| CN104752633A (en) * | 2013-12-31 | 2015-07-01 | 中国科学院微电子研究所 | Thin film packaging method |
| CN105679964A (en) * | 2016-03-28 | 2016-06-15 | 中国电子科技集团公司第五十五研究所 | Organic light-emitting device (OLED) packaging structure and method |
| CN105789473A (en) * | 2014-12-22 | 2016-07-20 | 昆山国显光电有限公司 | Flexible substrate and preparation method thereof |
| CN106299153A (en) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | A kind of film encapsulation method and structure thereof |
| CN107111972A (en) * | 2014-10-28 | 2017-08-29 | 株式会社半导体能源研究所 | Function panel, the manufacture method of function panel, module, data processing equipment |
| CN109155343A (en) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | The deposition method of the protective film of light emitting diode |
| US10367014B2 (en) | 2014-10-28 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5772736B2 (en) * | 2012-06-18 | 2015-09-02 | 株式会社デンソー | Atomic layer deposition equipment |
| JP6076098B2 (en) * | 2013-01-15 | 2017-02-08 | 株式会社アルバック | Alignment device and alignment method |
| WO2014112512A1 (en) * | 2013-01-15 | 2014-07-24 | 株式会社アルバック | Alignment device and alignment method |
| KR101579527B1 (en) * | 2013-09-16 | 2015-12-22 | 코닉이앤씨 주식회사 | Atomic layer deposition apparatus with scan-type reactor and method thereof |
| KR102302720B1 (en) * | 2014-01-21 | 2021-09-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Atomic layer deposition processing chamber permitting low-pressure tool replacement |
| US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| DE102016110884A1 (en) * | 2016-06-14 | 2017-12-14 | Aixtron Se | Apparatus and method for depositing organic layers on one or more substrates |
| JP6788935B2 (en) | 2016-08-16 | 2020-11-25 | 株式会社日本製鋼所 | Method of forming a protective film for an organic EL element and a method of manufacturing a display device |
| CN108448006B (en) * | 2018-03-29 | 2021-01-22 | 京东方科技集团股份有限公司 | Packaging structure, electronic device and packaging method |
| JP6929265B2 (en) * | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | Organic light emitting device and its manufacturing method, lighting device, mobile body, imaging device, electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4556282B2 (en) * | 2000-03-31 | 2010-10-06 | 株式会社デンソー | Organic EL device and method for manufacturing the same |
| JP2003347042A (en) * | 2002-05-24 | 2003-12-05 | Denso Corp | Sealing film for organic electronic device and its manufacturing method |
| JP4165227B2 (en) * | 2003-01-07 | 2008-10-15 | 株式会社デンソー | Organic EL display device |
| TWI438953B (en) * | 2008-01-30 | 2014-05-21 | Osram Opto Semiconductors Gmbh | Electronic component manufacturing method and electronic component |
| KR101084267B1 (en) * | 2009-02-26 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Organic light emitting display and manufacturing method thereof |
-
2011
- 2011-09-12 JP JP2012534998A patent/JPWO2012039310A1/en active Pending
- 2011-09-12 WO PCT/JP2011/070732 patent/WO2012039310A1/en active Application Filing
- 2011-09-15 TW TW100133214A patent/TW201230428A/en unknown
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104674191A (en) * | 2013-11-27 | 2015-06-03 | 财团法人工业技术研究院 | Multi-mode thin film deposition apparatus and thin film deposition method |
| US9023693B1 (en) | 2013-11-27 | 2015-05-05 | Industrial Technology Research Institute | Multi-mode thin film deposition apparatus and method of depositing a thin film |
| CN104752633A (en) * | 2013-12-31 | 2015-07-01 | 中国科学院微电子研究所 | Thin film packaging method |
| US11071224B2 (en) | 2014-10-28 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
| US12230647B2 (en) | 2014-10-28 | 2025-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
| US11824068B2 (en) | 2014-10-28 | 2023-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
| CN107111972A (en) * | 2014-10-28 | 2017-08-29 | 株式会社半导体能源研究所 | Function panel, the manufacture method of function panel, module, data processing equipment |
| US11818856B2 (en) | 2014-10-28 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
| US11075232B2 (en) | 2014-10-28 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
| US10367014B2 (en) | 2014-10-28 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
| TWI718111B (en) * | 2014-10-28 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | Functional panel, method for manufacturing the same, module, data processing device |
| TWI722676B (en) * | 2014-10-28 | 2021-03-21 | 日商半導體能源研究所股份有限公司 | Functional panel, method for manufacturing the same, module, data processing device |
| CN105789473A (en) * | 2014-12-22 | 2016-07-20 | 昆山国显光电有限公司 | Flexible substrate and preparation method thereof |
| CN105789473B (en) * | 2014-12-22 | 2018-11-09 | 昆山国显光电有限公司 | Flexible substrate and preparation method thereof |
| CN105679964A (en) * | 2016-03-28 | 2016-06-15 | 中国电子科技集团公司第五十五研究所 | Organic light-emitting device (OLED) packaging structure and method |
| CN109155343A (en) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | The deposition method of the protective film of light emitting diode |
| CN106299153A (en) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | A kind of film encapsulation method and structure thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012039310A1 (en) | 2012-03-29 |
| JPWO2012039310A1 (en) | 2014-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201230428A (en) | Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device | |
| JP6495301B2 (en) | Thin film encapsulation processing system and processing kit enabling low-pressure tool replacement | |
| TWI674690B (en) | Method for forming sealing structure, manufacturing device for sealing structure, manufacturing method of organic EL element structure, and manufacturing apparatus therefor | |
| TWI625878B (en) | Method for hybrid packaging of organic light-emitting diodes | |
| US20140264297A1 (en) | Thin film encapsulation-thin ultra high barrier layer for oled application | |
| JP5089586B2 (en) | Silicon-based thin film and method for forming silicon-based thin film | |
| US20150194637A1 (en) | Method for forming silicon nitride film, and apparatus for forming silicon nitride film | |
| KR101881470B1 (en) | Silicon nitride film deposition method, organic electronic device manufacturing method, and silicon nitride film deposition device | |
| CN105390621A (en) | Thin film permeation barrier system for substrates and devices and method of making the same | |
| US20070251458A1 (en) | Cleanroom-Capable Coating System | |
| KR101972148B1 (en) | Organic device manufacturing method and organic device manufacturing apparatus | |
| JP2011228688A5 (en) | ||
| CN109964331A (en) | Thin-film package processing system and process kit | |
| KR101573689B1 (en) | The apparatus for depositing the atomic layer | |
| TW200820326A (en) | Gas delivering system for in situ thermal treatment and thin film deposition and use of the same | |
| KR101610644B1 (en) | The apparatus for depositing the atomic layer | |
| JP5836974B2 (en) | Display device manufacturing apparatus and display device manufacturing method | |
| KR101760666B1 (en) | The apparatus for depositing atomic layer | |
| TW202347557A (en) | Chamber ionizer for reducing electrostatic discharge | |
| TW201401610A (en) | Organic electronic component, manufacturing method of organic electronic component, plasma processing apparatus | |
| TW201131682A (en) | Substrate processing system | |
| JP2012193413A (en) | Vacuum deposition apparatus and method for forming thin film |