CN105487340A - Light irradiation device used for peripheral exposure device - Google Patents
Light irradiation device used for peripheral exposure device Download PDFInfo
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- CN105487340A CN105487340A CN201510621331.1A CN201510621331A CN105487340A CN 105487340 A CN105487340 A CN 105487340A CN 201510621331 A CN201510621331 A CN 201510621331A CN 105487340 A CN105487340 A CN 105487340A
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Abstract
The invention provides a light irradiation device used for a peripheral exposure device, can effectively inhibit occurrence of graph damage, can also form light irradiation on a circuit diagram between an area and a chip edge part, and has sharply rising irradiation intensity distribution. The light irradiation device used for the peripheral exposure device has a light source which emits light, light is irradiated to the periphery of an edge part of an object to be irradiated, and exposure is performed on an edge position, the light source forms designated light intensity distribution, and light intensity of the periphery of the edge part of the object to be irradiated becomes low with the object to be irradiated from an inner side to an outer side.
Description
Technical field
The present invention relates to a kind of light irradiation device for periphery exposure device, the substrate edges portion periphery scribbling photoresist to semiconductor substrate, liquid crystal indicator glass substrate, photomask glass substrate etc. carries out illumination and penetrates, and exposes to remove the unnecessary resist of this edge part.
Background technology
In the past, in the manufacturing process of the semiconductors such as IC (IntegratedCircuit) and LSI (LargeScaleIntegratedcircuit), photoresist is coated on the surface of semiconductor wafer, carry out exposure imaging by mask to this resist layer, thus form circuitous pattern.
As the method applying resist on a surface of a semiconductor wafer, generally all adopt spin-coating method.Place on a spinstand by wafer, make it rotate at the immediate vicinity of this wafer surface resist that drips, make wafer surface entirety all coat resist by centrifugal action.
Adopt this spin-coating method, although the circuitous pattern forming region in centre portion has coating resist in the wafer, also coating is had in the Waffer edge portion not forming circuitous pattern, but many times, in order to transport wafer, chip conveying device can grip Waffer edge portion, if Waffer edge portion residual resist always, in chip conveying process, the phenomenon that the part that there will be resist is peeled off, come off.Further, if coming off appears in the resist in Waffer edge portion, and when the resist come off is attached in the circuitous pattern forming region of wafer, then cannot form desired circuitous pattern, have the problem that yield rate also reduces.Therefore, generally, use the exposure periphery exposure device of its periphery irradiation light comprising Waffer edge portion being carried out to resist, remove the unnecessary resist being coated in Waffer edge portion.This light irradiation device for periphery exposure device, such as on the books in patent documentation 1.
The light irradiation device for periphery exposure device (edge exposure device) described in patent documentation 1, has: light source cell, and its inside has lamp; 1st photoconduction, carries out leaded light to the light emitted by light source cell; Light mixed optical element (quartz pushrod), the light of mixing emitted by the 1st photoconduction; 2nd photoconduction, carries out leaded light to the light emitted by light mixed optical element; Irradiation head, is projected to the light of the 2nd photoconduction in substrate edges portion, and converges to the mode of the appointed area in substrate edges portion with the light that lamp irradiates and formed.
After the exposure of this periphery exposure device, the unnecessary resist removed in Waffer edge portion is waited by etching, if but unnecessary resist is not completely removed, when wafer remains on a small quantity (when producing so-called gray area), the reason causing rear operation resist to come off will be become.Therefore, preferably, remove the shape of cross section of the resist end after unnecessary resist (namely, remain in the shape of cross section of the resist end of circuitous pattern forming region), for between circuitous pattern forming region and Waffer edge portion in the shape of sharply to rise (that is, not too gently).
The appearance of upper described appearance gray area results from the exposure intensity distribution projecting the light in substrate edges portion from periphery exposure device.Namely, the photo-irradiation intensity distribution in substrate edges portion is projected from periphery exposure device, if when gently changing between circuitous pattern forming region and Waffer edge portion, between circuitous pattern forming region and Waffer edge portion, appearance is exposed insufficient region, (namely the shape of cross section remaining in the resist end of circuitous pattern forming region also becomes mild shape, there is gray area), therefore, the photo-irradiation intensity distribution of edge part is projected from periphery exposure device, preferably between circuitous pattern forming region and Waffer edge portion for sharply rise (namely, not too mild) shape.Thus, in the periphery exposure device described in patent documentation 1, to form rectangular aperture in irradiation head, by the mixed light of light mixed optical element, the mode projected on substrate through gap is formed.
[prior art document]
[patent documentation]
[patent documentation 1] special permission No. 3947365 instructions
Summary of the invention
The problem that invention will solve
According to the light irradiation device for periphery exposure device described in patent documentation 1, be incident upon the light on substrate, behind gap, only can become limit spread angle to a certain extent rectangular light beam (namely, almost parallel light beam), therefore, become between circuitous pattern forming region and Waffer edge portion and relatively sharply rise (namely, not too mild) exposure intensity distribution, also just inhibit the generation of gray area to a certain extent.
The technical problem to be solved in the present invention is that the circuits get owing to being formed on wafer is integrated, circuitous pattern is also more and more microminiaturized, therefore, a kind of light irradiation device for periphery exposure device of demand, it is between circuitous pattern and Waffer edge portion, the light of the exposure intensity distribution of more sharply rise than ever (that is, more not mild) can be projected.
In order to make the photo-irradiation intensity distribution be incident upon on substrate, more sharply rise between circuitous pattern forming region and Waffer edge portion, the exposure intensity of the light be incident upon on substrate itself can be improved, but taken once the exposure intensity improved exceedes, due to optics or against corrosion the reason such as reflection and produce beyond thought parasitic light, if this stray illumination is mapped to the forming region of circuitous pattern, then there will be so-called pattern loss, thus the circuitous pattern of desired resolution cannot be obtained.
The present invention just in view of the foregoing, and based on while this object, a kind of light irradiation device for periphery exposure device is provided, it effectively can suppress the generation of pattern loss, can also be radiated at the light between the forming region of circuitous pattern and the edge part of wafer with the exposure intensity distribution of sharply rising simultaneously.
Solve the means of problem
In order to achieve the above object, light irradiation device for periphery exposure device of the present invention, it is a kind of light source having injection light, and this light is radiated at the edge part periphery of thing to be illuminated and the light irradiation device being used for periphery exposure device that this edge part is exposed, light source forms the light distribution of specifying, in the light intensity of the edge part periphery of thing to be illuminated, with thing to be illuminated by Inside To Outside step-down.
According to this structure, to the edge part periphery of thing to be illuminated, irradiate sharply rise (namely, not too mild) exposure intensity distribution light, therefore, can the resist of accurate stick holding circuit figure forming region, the resist of thing edge part to be illuminated can also be removed exactly simultaneously.In addition, the light intensity of the edge part periphery of thing to be illuminated, to be formed with the mode of thing to be illuminated by Inside To Outside step-down, thus can suppress, by the generation of the caused beyond thought parasitic light such as the reflection of optics or against corrosion, the generation of so-called pattern loss can be suppressed.
In addition, can be configured to: the discharge lamp that light source has radiating light and the photoconduction be made up of the multifiber line light of discharge lamp being carried out to leaded light.Photoconduction has light entrance face, multifiber line is collapsed into circle and injects the light from discharge lamp; And light-emitting face, multifiber line is collapsed into rectangle and the light injected by discharge lamp injection.Light-emitting face by: the 2nd region of the 1st region being configured with a part for the multifiber line being positioned at central part at light entrance face and the part being configured with the multifiber line being positioned at periphery at light entrance face is formed.At the edge part periphery of thing to be illuminated, the light of the 1st region injection, than the light of the 2nd region injection closer to the inner side of thing to be illuminated.In addition, in this case, multifiber line random arrangement can be configured to.
In addition, can be configured to: have the substrate that be arranged in parallel with thing to be illuminated and two dimension is arranged on this substrate, and forming multiple light-emitting components in rectangular light exit face, light source, on the direction that the both sides relative with light-emitting face are parallel, forms the light distribution of specifying.In addition, in this case, can possess lens, its light source is configured in the light path of multiple light-emitting component separately, and the light penetrated from each light-emitting component becomes directional light and is shaped.In addition, in this case, can be configured to: light-emitting face is made up of the 2nd region in the 1st region of light and the light of injection the 2nd intensity lower than the 1st intensity of penetrating the 1st intensity, at the edge part periphery of thing to be illuminated, from the light of the 1st region injection, than the light of the 2nd region injection closer to the inner side of thing to be illuminated.
In addition, preferably, with the light of the 1st region injection, be irradiated on thing to be illuminated.
In addition, preferably, with the light of the 2nd region injection at least partially, beyond the region of objective existence side to be illuminated is irradiated to.
In addition, can be configured to, the equal and opposite in direction in the 1st region and the 2nd region.
In addition, preferably, optical mixer can also be had, injection after the light mixing that light-emitting face penetrates by it, and xsect is rectangle.In addition, in this case, can be configured to, optical mixer is the glass bar of the light of mixing the 1st region injection and the light of the 2nd region injection.In addition, also can be the structure that optical mixer comprises the 2nd glass bar of the 1st glass bar of the light of mixing the 1st region injection and the light of mixing the 2nd region injection.
In addition, preferably, light at least comprises the wavelength of the light acting on the resist layer be coated on thing to be illuminated.
Invention effect
As mentioned above, according to the present invention, realize a kind of generation that can suppress pattern loss, and the light irradiation device for periphery exposure device that there is between circuitous pattern forming region and Waffer edge portion light that the exposure intensity that sharply rises distributes and carry out irradiating can be radiated at.
Accompanying drawing explanation
Fig. 1 shows the figure of the schematic configuration of the periphery exposure device of the light irradiation device be equipped with involved by the 1st embodiment of the present invention.
Fig. 2 is the structure key diagram of the photoconduction be equipped with in light irradiation device of the first embodiment of the present invention.
The schematic diagram of the exposure intensity distribution of the light that the incident end face that Fig. 3 shows the photoconduction be equipped with in light irradiation device of the first embodiment of the present invention is injected.
Fig. 4 is figure when observing the 1st glass bar and the 2nd glass bar that are equipped with light irradiation device of the first embodiment of the present invention from the outgoing end face side of photoconduction.
Fig. 5 shows the figure projecting the illumination pattern of the light of the edge part periphery of substrate from the light irradiation device involved by the 1st embodiment of the present invention.
Fig. 6 shows the schematic diagram of the exposure intensity distribution being incident upon the illumination pattern of the edge part periphery of substrate from the light irradiation device involved by the 1st embodiment of the present invention.
Fig. 7 shows the summary construction diagram of the periphery exposure device of the light irradiation device be equipped with involved by the 2nd embodiment of the present invention.
Fig. 8 is the figure that the guide structure be equipped with in the light irradiation device involved by the 2nd embodiment of the present invention is described.
Fig. 9 is figure when observing the 1st glass bar and the 2nd glass bar that are equipped with light irradiation device of the second embodiment of the present invention from the outgoing end face side of photoconduction.
Figure 10 illustrates the figure projecting the illumination pattern of the light of the edge part periphery of substrate from the light irradiation device involved by the 2nd embodiment of the present invention.
Figure 11 shows the figure of the schematic configuration of the periphery exposure device of the light irradiation device be equipped with involved by the 3rd embodiment of the present invention.
Figure 12 illustrates the figure projecting the illumination pattern of the light of the edge part periphery of substrate from the light irradiation device involved by the 3rd embodiment of the present invention.
Figure 13 shows the summary construction diagram of the periphery exposure device of the light irradiation device be equipped with involved by the 4th embodiment of the present invention.
Figure 14 is the figure of the inner structure of the light irradiation device illustrated involved by the 4th embodiment of the present invention.
In figure:
1,2,3,4 periphery exposure devices
10 rotating mechanisms
10aXY worktable
12 electric rotating machines
14 motor shafts
16 rotary chucks
20 slit diffusers
100,200,300,400 light irradiation devices
110 light source cells
112 discharge lamps
114 elliptical reflectors
116 housings
116a front panel
118 fixtures
120,220 photoconductions
120a, 220a incident end face
120b, 220b outgoing end face
121,221 optical fiber cables
122 the 1st connectors
124 the 2nd connectors
130,230 irradiation heads
131,231 the 1st glass bars
132,232 the 2nd glass bars
133,134 lens
135 catoptrons
331 glass bars
401 circuit substrates
402LED
403 the 1st lens
404 the 2nd lens
405 the 3rd lens
410 guide-lighting mirrors
W substrate
PA illumination pattern
PA1 the 1st illumination pattern
PA2 the 2nd illumination pattern
CA circuitous pattern forming region
Embodiment
Below, by reference to the accompanying drawings embodiments of the present invention are described in further detail.Further, the identical or identical sign flag in corresponding position in figure, its explanation no longer repeats.
1st embodiment:
Fig. 1 shows the figure of the schematic configuration of the main portions of the periphery exposure device 1 of the light irradiation device 100 be equipped with involved by the 1st embodiment of the present invention, Fig. 1 (a) is the planimetric map of periphery exposure device 1, and Fig. 1 (b) is the outboard profile of periphery exposure device 1.The periphery exposure device 1 of present embodiment is that one makes discoidal substrate W rotate, and carry out illumination to the edge part periphery of substrate W and to penetrate and in order to remove the device that the unnecessary resist of edge part carries out exposing, mainly have substrate W is rotated rotating mechanism 10, carry out light-struck light irradiation device 100.Further, in FIG, for ease of explanation, represent with XYZ orthogonal coordinate system, with parallel and mutually orthogonal 2 axles in the surface (that is, surface level) of substrate W as X-axis and Y-axis, the axle orthogonal with X-axis and Y-axis represents as Z axis, appropriate application XYZ orthogonal coordinate system is described below.
Rotating mechanism 10 has electric rotating machine 12, motor shaft 14 and rotary chuck 16.Rotary chuck 16 is that one is connected with electric rotating machine 12 by motor shaft 14, the disc-shaped part rotated with the rotation of motor shaft 14, center C for ease of substrate W is configured on the turning axle AX of electric rotating machine 12, fixes from back side vacuum suction substrate W with approximate horizontal posture.Therefore, the spinning movement of electric rotating machine 12 is sent to rotary chuck 16 by motor shaft 14, and the substrate W be fixed on rotary chuck 16 turns at XY plane internal rotation.
Light irradiation device 100 is that a kind of edge part periphery at substrate W carries out light-struck device, has light source cell 110, photoconduction 120, irradiation head 130.
Light source cell 110, has discharge lamp 112, reflects the housing 116 of the elliptical reflector 114 of the light L that discharge lamp 112 radiates, storage discharge lamp 112 and elliptical reflector 114.In addition, on the front panel 116a of housing 116, be provided with and be connected with the 1st connector 122 (aftermentioned) of photoconduction 120, support and fix the fixture 118 of the base end part side (incident end face 120a side) of photoconduction 120.
Discharge lamp 112 is discharge mediums that a kind of inclosure is made up of mercury or rare gas etc., there is in ultraviolet wavelengths the so-called UV lamp of emission spectrum, configure in the mode that the electric arc bright spot of discharge lamp 112 is roughly consistent with the 1st focal position of elliptical reflector 114.
Elliptical reflector 114 is bowl-type catoptrons that a kind of light L radiated by discharge lamp 112 reflects to photoconduction 120, in the present embodiment, formed in the mode of the light L reflected by elliptical reflector 114 in circular optically focused on the incident end face 120a of photoconduction 120.
Photoconduction 120 is a kind of light guide members carrying out leaded light to the light L that discharge lamp 112 radiates along X-direction, is made up of n bar (such as, 500) optical fiber cable 121.The outer peripheral face of photoconduction 120 (that is, n bar optical fiber cable 121) is coated by not shown pipe, and at the outer peripheral face of the base end part side (incident end face 120a side) of photoconduction 120, being provided with can the 1st connector 122 of connection fixture 118.In addition, at the outer peripheral face of the side, leading section (outgoing end face 120b side) of photoconduction 120, the 2nd connector 124 that can connect irradiation head 130 is installed.As shown in Figure 1, when 1st connector 122 is connected with fixture 118, the incident end face 120a of photoconduction 120 to be accommodated in housing 116 and to be configured in the 2nd focus of elliptical reflector 114, and the light L reflected by elliptical reflector 114 is injected in photoconduction 120 (that is, n bar optical fiber cable 121).
Fig. 2 is the structure key diagram of the optical fiber cable 121 in the photoconduction 120 of present embodiment, and Fig. 2 (a) is figure when observing incident end face 120a from discharge lamp 112 side, Fig. 2 (b) is from the figure during observation outgoing end face 120b of irradiation head 130 side.
As shown in Fig. 2 (a), at the incident end face 120a of the photoconduction 120 of present embodiment, n bar optical fiber cable 121 is collapsed into circular, roughly n/2 bar (namely, general about 250) optical fiber cable 121 be configured in central part A1 (such as, part from the center of incident end face 120a to radius 3mm), roughly the optical fiber cable 121 of n/2 bar (that is, general about 250) is configured in periphery A2 (in Fig. 2 (a) part shown in grey).
In addition, as shown in Fig. 2 (b), the outgoing end face 120b of the photoconduction 120 of present embodiment, n bar optical fiber cable 121 is collapsed into substantially rectangular, the roughly n/2 bar of central part A1 is configured in (namely in incident end face 120a, general about 250 articles) optical fiber cable 121 be configured in the 1st region B1 of rectangle in the mode of random combine, the optical fiber cable 121 being configured in the roughly n/2 bar (that is, general about 250 articles) of periphery A2 in incident end face 120a is configured in the 2nd region B2 (in Fig. 2 (b) part shown in grey) of rectangle in the mode of random combine.
As implied above, in the photoconduction 120 of present embodiment, the roughly n/2 bar of central part A1 is configured in (namely at incident end face 120a, general about 250) optical fiber cable 121 and be configured in the roughly n/2 bar of periphery A2 (namely at incident end face 120a, general about 250) optical fiber cable 121, be configured in respectively in different regions (that is, the 1st region B1 and the 2nd region B2) at outgoing end face 120b.
Fig. 3 shows the schematic diagram of the exposure intensity distribution of the light L injected in the incident end face 120a of photoconduction 120, and transverse axis represents the distance (mm) using the center of incident end face 120a as 0mm, the relative intensity when longitudinal axis represents that maximum intensity is 1.0.As shown in Figure 3, inject the light L of the incident end face 120a of photoconduction 120, because of the mountain font exposure intensity distribution that the center with incident end face 120a is top, so to the optical fiber cable 121 of central part A1 (distance from the center of incident end face 120a is the part within 3mm) being configured in incident end face 120a, inject the light L that relative intensity is more than 0.5, to the optical fiber cable 121 of periphery A2 (distance from the center of incident end face 120a is the part beyond 3mm) being configured in incident end face 120a, inject the light L that relative intensity is less than 0.5.Therefore, from the 1st region B1 and the 2nd region B2 of the outgoing end face 120b of photoconduction 120, the light L that injection exposure intensity is different separately.
Irradiation head 130 to be a kind ofly connected with the 2nd connector 124 of photoconduction 120, the leading section (outgoing end face 120b) of storage photoconduction 120, the light L penetrated by outgoing end face 120b is guide-lighting and be projected to the component (Fig. 1) of the edge part periphery of substrate W.As shown in Figure 1, irradiation head 130 has: carry out the 1st guide-lighting glass bar 131 to the light L emitted by the 1st region B1 of outgoing end face 120b; The 2nd guide-lighting glass bar 132 is carried out to the light L emitted by the 2nd region B2 of outgoing end face 120b; Light L emitted by 1st glass bar 131 and the 2nd glass bar 132 is projected to the lens 133,134 of the edge part periphery of substrate W; Be configured between lens 133 and lens 134, the catoptron 135 of light path 90 degree of bendings of the light L that lens 133 are penetrated.Further, the irradiation head 130 of present embodiment, is fixed on the top of substrate W by not shown cantilever.In addition, in present embodiment, between irradiation head 130 and substrate W, be provided with the slit diffuser 20 forming rectangular aperture (not shown), the light L that irradiation head 130 penetrates is through the rectangular aperture be formed in slit diffuser (not shown), remove parasitic light therefrom, and the rectangular illumination figure PA specified is projected onto the edge part periphery (Fig. 4) of substrate W.
Fig. 4 is figure when observing the 1st glass bar 131 and the 2nd glass bar 132 of present embodiment from the outgoing end face 120b side of photoconduction 120.As shown in Fig. 1 (b) and Fig. 4,1st glass bar 131 is that its xsect a kind of has the square column type glass bar with the roughly the same shape of the 1st region B1 of outgoing end face 120b, guide-lighting along X-direction while the light L penetrated by 1st region B1 mixes, penetrate to lens 133.In addition, the 2nd glass bar 132 is that its xsect a kind of has the square column type glass bar with the roughly the same shape of the 2nd region B2 of outgoing end face 120b, guide-lighting along X-direction while the light L penetrated by the 2nd region B2 mixes, and penetrates to lens 133.
As shown in Fig. 1 (b), through the light L of lens 133, Z-direction is reflexed to (namely by catoptron 135, in Fig. 1 (b) downwards), through the rectangular slot (not shown) of lens 134, slit diffuser 20, be projected to the edge part periphery of substrate W.The lens 133,134 of present embodiment are the lens forming so-called projection optics system, and the light beam of the light L of the 1st glass bar 131 and the injection of the 2nd glass bar 132 expands (or reducing) by specifying multiplying power, projects the edge part periphery of substrate W.Further, in Fig. 1 (b), the lens 133,134 of present embodiment, illustrate with biconvex lens separately, but are not limited to this structure, also can be made up of the lens combination of combination biconvex lens, plano-convex lens, concave-convex lens etc.
And, as mentioned above, in present embodiment, in order to remove parasitic light etc., slit diffuser 20 is provided with between irradiation head 130 and substrate W, but if when the unnecessary light such as parasitic light can not become problem, also slit diffuser 20 can not be adopted, light L (that is, rectangular light beam) through lens 134 is directly incident upon on substrate W.
Fig. 5 is the figure that the illumination pattern PA being projected to the light L of the edge part periphery of substrate W from the light irradiation device 100 of present embodiment is described.As mentioned above, in present embodiment, because the light L penetrated from the outgoing end face 120b of photoconduction 120 is by the 1st glass bar 131 and the 2nd glass bar 132, (or reducing) is expanded by specifying multiplying power, rectangular aperture (not shown) through slit diffuser 20 is projected to the edge part periphery of substrate W, so as shown in Figure 5, the rectangular illumination figure PA roughly the same with gap (not shown) size of slit diffuser 20 is projected to the edge part periphery of substrate W.And, as mentioned above, illumination pattern PA combines the light L through the 1st the glass bar 131 and light L through the 2nd glass bar 132 and is formed, but be through the light L that lens 133 advance along X-direction, by catoptron 135 downwards (namely, Z-direction) bending, therefore, by the light L through the 1st glass bar 131 (namely, light L from the 1st region B1 of outgoing end face 120b penetrates) the 1st illumination pattern PA1 that formed, ratio by the light L through the 2nd glass bar 132 (namely, light L from the 2nd region B2 of outgoing end face 120b penetrates) the 2nd illumination pattern PA2 that formed, will closer to the inner side of substrate W.In addition, as shown in Figure 5, in present embodiment, in order to the tangent line of the separatrix and substrate W that make the 1st illumination pattern PA1 and the 2nd illumination pattern PA2 is basically identical, irradiation head 130, between the circuitous pattern forming region CA and the edge part of substrate W of substrate W, is positioned at the top of substrate W and fixes by the 1st illumination pattern PA1.
Fig. 6 shows the schematic diagram of the exposure intensity distribution of the X-direction of the illumination pattern PA of the edge part periphery being incident upon substrate W, (namely transverse axis represents the separatrix of the 1st illumination pattern PA1 and the 2nd illumination pattern PA2, the tangent line of substrate W) the distance (mm) of the X-direction of position when being 0mm, the relative intensity when longitudinal axis represents that maximum intensity is 1.0.As mentioned above, in the present embodiment, be configured in the optical fiber cable 121 on the central part A1 of the incident end face 120a of photoconduction 120, inject the light L that relative intensity is more than 0.5, be configured in the optical fiber cable 121 on periphery A2, inject the light L that relative intensity is less than 0.5, therefore, from the exposure intensity of the light L that the 1st region B1 of the outgoing end face 120b of photoconduction 120 penetrates, higher than the exposure intensity of the light L penetrated from the 2nd region B2.Thus as shown in Figure 6, the exposure intensity of the 1st illumination pattern PA1 that the light L penetrated by the 1st region B1 is formed (namely, exposure intensity in distance 0mm to the 2mm scope of Fig. 6), the exposure intensity of the 2nd illumination pattern PA2 that the light L that ratio is penetrated by the 2nd region B2 is formed (namely, the exposure intensity of distance-2mm to-0.2mm scope of Fig. 6) want high, be equivalent to substrate W circuitous pattern forming region CA end (Fig. 5) position (namely, position at the distance 2mm of Fig. 6), become the exposure intensity distribution of sharply rising.
In addition, as mentioned above, because being configured in the optical fiber cable 121 of the 1st region B1 and the 2nd region B2, respective random combine arrangement, so make the exposure intensity equalization of the light L penetrated from the 1st region B1 and the 2nd region B2.Therefore, the exposure intensity of the 1st illumination pattern PA1 that the light L penetrated by the 1st region B1 is formed is roughly even in X-direction and Y direction, equally, the exposure intensity of the 2nd illumination pattern PA2 that the light L penetrated by the 2nd region B2 is formed is roughly even in X-direction and Y direction.
And, in present embodiment, although the exposure intensity of the 2nd illumination pattern PA2, be about 0.3 times of the exposure intensity of relative 1st illumination pattern PA1, but in order to the resist that the edge part periphery removing substrate W is unnecessary, this exposure intensity is set as the exposure intensity of minimum requirements.
As mentioned above, in the light irradiation device 100 of present embodiment, incident end face 120a at photoconduction 120 be configured in the optical fiber cable 121 of central part A1 and be configured in the optical fiber cable 121 of periphery A2 at incident end face 120a, divide in different regions (namely separately at outgoing end face 120b, 1st region B1 and the 2nd region B2) arrange, thus, exposure intensity inside substrate W is high, the illumination pattern PA that (that is, not too gently) exposure intensity sharply risen of circuitous pattern forming region CA end at substrate W distributes is projected to the edge part periphery of substrate W.Therefore, can the resist of accurate stick holding circuit figure forming region CA, also can remove the resist of substrate W edge part exactly simultaneously.
In addition, be positioned at the exposure intensity of the 2nd illumination pattern PA2 outside substrate W, be configured to the exposure intensity of the minimum requirements of the unnecessary resist in order to remove substrate W edge part periphery (namely, suppressed), therefore, the generation of the beyond thought parasitic light that inhibit the reflection etc. due to optics or against corrosion to cause, also just inhibits the generation of so-called pattern loss.
Be more than the explanation made in conjunction with present embodiment, but the present invention is not limited to above-mentioned formation, can various distortion be carried out in technical thought range of the present invention.
Such as, the periphery exposure device 1 of present embodiment, be illustrated although carry out light-struck device with a kind of edge part periphery to disc substrate W, substrate W can be the shape with directional plane portion, also can be the rectangular substrate for liquid crystal etc.Further, when supposing that substrate W is rectangle, adopt and make the XY worktable of substrate movement in XY plane to substitute rotating mechanism 10 that substrate W is rotated, for ease of the light L of irradiation head 130 injection along the edge part relative movement of substrate W, XY worktable need be made to move.
In addition, in the photoconduction 120 of present embodiment, consist of: the incident end face 120a of photoconduction 120 is configured in the roughly n/2 bar of central part A1 (namely, article 250, about) optical fiber cable 121 be distributed on the 1st region B1 of outgoing end face 120b, (namely incident end face 120a is configured in the roughly n/2 bar of periphery A2, about 250) optical fiber cable 121 is distributed on the 2nd region B2 of outgoing end face 120b, but be not limited to this distribution, as long as the exposure intensity inside substrate W can be made to become the highest, substrate W circuitous pattern forming region CA formed sharply rise (namely, not too mild) exposure intensity distribution illumination pattern PA.
(the 2nd embodiment)
Fig. 7 shows the figure of the schematic configuration of the main portions of the periphery exposure device 2 of the light irradiation device 200 be equipped with involved by the 2nd embodiment of the present invention, Fig. 7 (a) is the planimetric map of periphery exposure device 2, and Fig. 7 (b) is the outboard profile of periphery exposure device 2.As shown in Figure 7, the periphery exposure device 2 of present embodiment, irradiation head 230 and rotating mechanism 10 are along Y direction arrangement, and be projected to the edge part periphery of the Y direction of substrate W from the light L of irradiation head 230 injection, this point is different from the periphery exposure device of the 1st embodiment.In addition, with the difference of projected position of the light L that irradiation head 230 penetrates, the structure of photoconduction 220 and irradiation head 230 and the photoconduction 120 of the 1st embodiment and irradiation head 130 also different.Below, be described in detail for the difference with the 1st embodiment.
Fig. 8 is the figure of optical fiber cable 221 structure of the photoconduction 220 that present embodiment is described.Fig. 8 (a) is figure when observing incident end face 220a from discharge lamp 112 side, Fig. 8 (b) is from the figure during observation outgoing end face 220b of irradiation head 230 side.In addition, Fig. 9 is figure when observing the 1st glass bar 231 and the 2nd glass bar 232 of the irradiation head 230 of present embodiment from the outgoing end face 220b side of photoconduction 220.
As shown in Fig. 8 (a), the photoconduction 220 of present embodiment, the same with the photoconduction 120 of the 1st embodiment, on incident end face 220a, n bar optical fiber cable 221 is collapsed into circular, roughly n/2 bar (namely, article 250, about) optical fiber cable 221 be configured in central part A1 (such as, part from the center of incident end face 220a to radius 3mm), roughly the optical fiber cable 221 of n/2 bar (that is, about 250) is configured in periphery A2 (in Fig. 8 (a) part shown in grey).
But, as shown in Fig. 8 (b), in the outgoing end face 220b of the photoconduction 220 of present embodiment, incident end face 220a is configured in the roughly n/2 bar of central part A1 (namely, article 250, about) optical fiber cable 221 random alignment configuration the 1st region B1, and roughly n/2 bar incident end face 220a being configured in periphery A2 (namely, article 250, about) the 2nd region B2 (Fig. 8 (b) in grey shown in part) of optical fiber cable 221 random alignment configuration, be configured in left and right directions side by side (namely, Y direction), this point is different from the photoconduction 120 of the 1st embodiment.
In addition, as shown in Fig. 7 (a) and Fig. 9, the 1st glass bar 231 of present embodiment and the 2nd glass bar 232, be also the configuration according to the 1st region B1 and the 2nd region B2, be configured in left and right directions (that is, Y direction) side by side.
Figure 10 is the figure that the illumination pattern PA being projected to the light L of the edge part periphery of substrate W from the light irradiation device 200 of this form of implementation is described.As mentioned above, in present embodiment, 1st region B1 and the 2nd region B2 of the outgoing end face 220b of photoconduction 220 are arranged in Y direction, in addition the 1st glass bar 231 and the 2nd glass bar 232 are also arranged in Y direction, therefore as shown in Figure 10, by the light L through the 1st glass bar 231 (namely, light L from the 1st region B1 of outgoing end face 220b penetrates) the 1st illumination pattern PA1 that formed and the 2nd illumination pattern PA2 that formed by the light L (that is, from the light L that the 2nd region B2 of outgoing end face 220b penetrates) through the 2nd glass bar 232 is also arranged in Y direction.In addition, the same with the 1st embodiment, 1st illumination pattern PA1 is than the inner side of the 2nd illumination pattern PA2 closer to substrate W, 1st illumination pattern PA1 and the separatrix of the 2nd illumination pattern PA2 and the tangent line of substrate W roughly consistent, the 1st illumination pattern PA1 is between the circuitous pattern forming region CA and the edge part of substrate W of substrate W.
Therefore, structure according to the present embodiment, exposure intensity inside substrate W is high, and the illumination pattern PA that (that is, not too gently) exposure intensity sharply risen of the end of the circuitous pattern forming region CA of substrate W distributes can be projected to the edge part periphery of substrate W.For this reason, can the resist of stick holding circuit figure forming region CA exactly, the resist of substrate W edge part can also be removed exactly simultaneously.
(the 3rd embodiment)
Figure 11 shows the planimetric map of the schematic configuration of the main portions of the periphery exposure device 3 of the light irradiation device 300 be equipped with involved by the 3rd embodiment of the present invention.The light irradiation device 300 of present embodiment, its irradiation head 330 has 1 glass bar 331, consisted of the mode of glass bar 331 leaded light with the light L that the 1st region B1 of the outgoing end face 220b of photoconduction 220 and the 2nd region B2 penetrates, this point is different from the light irradiation device 200 of the 2nd embodiment.
Figure 12 shows the schematic diagram of the exposure intensity distribution being projected to the Y direction of the illumination pattern PA (Figure 10) of the edge part periphery of substrate W from the light irradiation device 300 of present embodiment, (namely transverse axis represents the separatrix of the 1st illumination pattern PA1 and the 2nd illumination pattern PA2, the tangent line of substrate W) the distance (mm) of position Y direction when being Omm, the relative intensity when longitudinal axis represents that maximum intensity is 1.0.As mentioned above, in the present embodiment, because light L emitted by the 1st region B1 of the outgoing end face 220b of photoconduction 220 and the 2nd region B2 carries out leaded light by 1 glass bar 331, the light L that the light L that 1st region B1 penetrates and the 2nd region B2 penetrates is mixed in the inside of glass bar 331, but as shown in figure 12, the illumination pattern PA projected by the structure of present embodiment, be the highest in the inner side exposure intensity of substrate W, be equivalent to substrate W circuitous pattern forming region CA end position (namely, position at the distance 2mm of Figure 12), for sharply rise (namely, not too mild) exposure intensity distribution.Thus, identical with the embodiment of the 1st and the 2nd, can the resist of stick holding circuit figure forming region CA exactly, also can remove the resist of substrate W edge part exactly.
(the 4th embodiment)
Figure 13 shows the outboard profile of the schematic configuration of the main portions of the periphery exposure device of the light irradiation device 400 be equipped with involved by the 4th embodiment of the present invention.The periphery exposure device 4 of present embodiment is that a kind of edge part periphery to rectangular substrate W carries out illumination and to penetrate and in order to remove edge part (such as, from the end of substrate W to the blocked areas of 70mm width) device that exposes of unnecessary resist and carrying out, adopt XY worktable 10a to carry out alternative rotating mechanism 10, the periphery exposure device of this point and the 1st to the 3rd embodiment 1,2,3 different.In addition, the light irradiation device 400 of present embodiment, have multiple LED (LightEmittingDiode) 402 and be used as light source, illumination pattern PA is formed by the light penetrated from LED402, and be projected to the edge part periphery of substrate W, the light irradiation device of this point and the 1st to the 3rd embodiment 100,200,300 different.
XY worktable 10a is that substrate W fixes by one, and two opposite side making substrate W relative separately towards X-direction and Y direction, and make the mechanism of substrate W movement in XY plane.The XY worktable 10a of present embodiment, makes substrate W move in XY plane, so that the light L of light irradiation device 400 injection is along the edge part relative movement of substrate W.
Figure 14 is the figure of the inner structure of the light irradiation device 400 that present embodiment is described, Figure 14 (a) is figure when observing light irradiation device 400 from Y direction, Figure 14 (b) is the figure of (that is, when observing from the downside of Figure 14 (a)) when observing light irradiation device 400 from Z-direction.
As shown in figure 14, light irradiation device 400 has: the rectangular circuit substrate 401 being parallel to X-direction and Y direction; 25 LED402; Be configured in the 1st lens 403 on the optical axis of each LED402, the 2nd lens 404, the 3rd lens 405; And guide-lighting mirror 410.
LED402 is configured on circuit substrate 401 with the two-dimentional tetragonal trellis of 5 (X-direction) × 5 (Y direction), is electrically connected with circuit substrate 401.Circuit substrate 401 is connected with not shown LED drive circuit, drives current through circuit substrate 401 from LED drive circuit, is supplied to each LED402.When drive current is supplied to each LED402, LED402 can penetrate the ultraviolet light (such as, wavelength 365nm) of the corresponding light quantity of drive current.
1st lens 403, the 2nd lens 404 and the 3rd lens 405, be fixed on not shown mirror holder, and be configured on the optical axis of each LED402.1st lens 403 to be formed by silicones injection mo(u)lding and LED402 side is the plano-convex lens of plane, have reduce LED402 inject the function of the spread angle of ultraviolet light.2nd lens 404 and the 3rd lens 405 to be formed by silicones injection mo(u)lding and the plane of incidence and exit facet are the biconvex lens of convex surface, and the ultraviolet light that the 1st lens 403 are injected is configured as almost parallel light.Therefore, from each 3rd lens 405 injection, there is the almost parallel ultraviolet light of specifying beam diameter.
Guide-lighting mirror 410 is a kind ofly formed with reflecting surface in inside and xsect is the parts of rectangular hollow, during to observe from Z-direction, surrounds the mode of 25 LED404 and arrange.Therefore, through the ultraviolet light of each 3rd lens 405, penetrate through guide-lighting mirror 410, and pass the gap (not shown) of slit diffuser 20, illumination pattern PA is projected the edge part periphery (Figure 13) of substrate W.
And, although the illumination pattern PA that structure according to the present embodiment projects, also be to make the exposure intensity inside substrate W for the highest, become in the position of the circuitous pattern forming region CA end being equivalent to substrate W sharply rise (namely, not too mild) exposure intensity distribution, be that the highest mode is formed to be configured in the outgoing light quantity of the LED402 inside substrate W, but, in present embodiment, along with the movement of substrate W, each LED402 is different from the relative position relation of substrate W, therefore the drive current of each LED402 is fed to according to the moving direction of substrate W and irradiating position changing.Specifically, when all edge exposures making the X-direction minus side of substrate W, drive current is flow through to make the higher mode of the emergent light quantitative change of the LED402 being positioned at the positive side of X-direction; When making all edge exposures in one side of the positive side of the X-direction of substrate W, flow through drive current to make the higher mode of the emergent light quantitative change of the LED402 being positioned at X-direction minus side; When all edge exposures in the one side of the Y direction minus side making substrate W, flow through drive current to make the LED402 being arranged in the positive side of Y direction in the mode that emergent light quantitative change is higher; When making all edge exposures in one side of the positive side of the Y direction of substrate W, flow through drive current to make the LED402 being arranged in Y direction minus side in the mode that emergent light quantitative change is higher.As mentioned above, structure according to the present embodiment, identical with the 1st to the 3rd embodiment, accurately can form the resist of CA by stick holding circuit figure, substrate W edge part resist can also be removed exactly simultaneously.
In addition, embodiment of disclosure, has made illustration in every respect, but should be understood that the present invention is not limited only to described execute mode.Scope of the present invention is not limited to above-mentioned explanation, it is intended to comprise according to claims, with the intention of Claims scope equalization, and all distortion included by it within the scope of.
Claims (13)
1., for a light irradiation device for periphery exposure device, for possessing the light source of injection light, and irradiate described light to the edge part periphery of thing to be illuminated and to the light irradiation device for periphery exposure device that described edge part exposes, it is characterized in that,
Described light source forms the light distribution of specifying, and the light intensity of the edge part periphery of thing to be illuminated, with thing to be illuminated by Inside To Outside step-down.
2. the light irradiation device for periphery exposure device according to claim 1, is characterized in that,
Described light source has the discharge lamp radiating described light, and the photoconduction be made up of the optical fiber cable light of described discharge lamp being carried out to guide-lighting majority,
Described photoconduction has light entrance face and light-emitting face, on described light entrance face, the optical fiber cable of described majority is collapsed into circle, and inject described light entrance face from the light of described discharge lamp, on described light-emitting face, the optical fiber cable of described majority is collapsed into rectangle, and the light injection will injected from described discharge lamp
Described light-emitting face is made up of the 1st region and the 2nd region, described 1st area configurations has a part for the optical fiber cable of the described majority being positioned at central part on described light entrance face, described 2nd area configurations has a part for the optical fiber cable of the described majority being positioned at periphery on described light entrance face
At the edge part periphery of described thing to be illuminated, the light that described in the light ratio of described 1st region injection, the 2nd region is penetrated is closer to the inner side of described thing to be illuminated.
3. the light irradiation device for periphery exposure device according to claim 2, is characterized in that,
The optical fiber cable random alignment configuration of described majority.
4. the light irradiation device for periphery exposure device according to claim 1, is characterized in that,
Described light source possess with the substrate of described thing configured in parallel to be illuminated and two-dimensional arrangement on the substrate, and form multiple light-emitting components of the light-emitting face of rectangle,
On the direction that the both sides relative with described light-emitting face are parallel, be formed with described light distribution of specifying.
5. the light irradiation device for periphery exposure device according to claim 4, is characterized in that,
Described light source has lens, and described lens are configured in the light path of described multiple light-emitting component separately, is shaped in the mode that the light of described each light-emitting component injection is directional light.
6. the light irradiation device for periphery exposure device according to claim 4 or 5, is characterized in that,
Described light-emitting face is made up of the 1st region and the 2nd region penetrated lower than the 2nd intensity light of described 1st intensity penetrating the 1st intensity light, at the edge part periphery of described thing to be illuminated, the light of described 1st region injection, than the light of described 2nd region injection closer to the inner side of described thing to be illuminated.
7. the light irradiation device for periphery exposure device according to any one of claim 2,3 or 6, is characterized in that,
The light of described 1st region injection, is radiated on described thing to be illuminated.
8. the light irradiation device for periphery exposure device according to any one of claim 2,3,6 or 7, is characterized in that,
The light of described 2nd region injection at least partially, irradiates the outside of described thing to be illuminated.
9., according to the light irradiation device for periphery exposure device in claim 2,3,6 ~ 8 described in any one, it is characterized in that,
The equal and opposite in direction in described 1st region and described 2nd region.
10., according to the light irradiation device for periphery exposure device in claim 2,3 or 6 ~ 9 described in any one, it is characterized in that,
The described light irradiation device for periphery exposure device also has optical mixer, and described optical mixer mixes the light of described light-emitting face injection and penetrates, and xsect is rectangle.
11. light irradiation devices for periphery exposure device according to claim 10, is characterized in that,
Described optical mixer is the glass bar by the light emitted by described 1st region and the mixing of the light emitted by described 2nd region.
12. light irradiation devices for periphery exposure device according to claim 10, is characterized in that,
Described optical mixer comprise mixing described 1st region injection light and the 1st glass bar and mix described 2nd region injection light and the 2nd glass bar.
13., according to the light irradiation device for periphery exposure device in claim 1 ~ 12 described in any one, is characterized in that,
Described light, at least comprises the wavelength of the light acting on the resist layer be coated on described thing to be illuminated.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014202704A JP6082721B2 (en) | 2014-10-01 | 2014-10-01 | Light irradiation device for peripheral exposure equipment |
| JP2014-202704 | 2014-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105487340A true CN105487340A (en) | 2016-04-13 |
| CN105487340B CN105487340B (en) | 2018-03-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510621331.1A Expired - Fee Related CN105487340B (en) | 2014-10-01 | 2015-09-25 | light irradiation device for periphery exposure device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6082721B2 (en) |
| KR (1) | KR101985848B1 (en) |
| CN (1) | CN105487340B (en) |
| TW (1) | TWI596443B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107748484A (en) * | 2017-11-22 | 2018-03-02 | 武汉新芯集成电路制造有限公司 | A kind of measuring method of minimum exposure energy |
| CN110275397A (en) * | 2018-03-16 | 2019-09-24 | 豪雅冠得股份有限公司 | Light irradiation device |
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| JP2007194583A (en) * | 2005-12-21 | 2007-08-02 | Ａｒｋ Ｔｅｃｈ株式会社 | Light source device for peripheral exposure |
| WO2011125420A1 (en) * | 2010-03-31 | 2011-10-13 | 東レエンジニアリング株式会社 | Periphery exposure apparatus and periphery exposure method |
| CN103874962A (en) * | 2011-09-22 | 2014-06-18 | 日本电气工程株式会社 | Optical recording head and image formation device |
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| JP2845629B2 (en) * | 1991-02-13 | 1999-01-13 | 東京エレクトロン株式会社 | Exposure method |
| JP3707060B2 (en) * | 1994-06-29 | 2005-10-19 | 株式会社ニコン | Illumination optics |
| JP3947365B2 (en) | 2001-04-17 | 2007-07-18 | 株式会社Ｓｏｋｕｄｏ | Edge exposure device |
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- 2014-10-01 JP JP2014202704A patent/JP6082721B2/en active Active
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- 2015-09-25 CN CN201510621331.1A patent/CN105487340B/en not_active Expired - Fee Related
- 2015-09-25 KR KR1020150136431A patent/KR101985848B1/en active IP Right Grant
- 2015-09-30 TW TW104132035A patent/TWI596443B/en not_active IP Right Cessation
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| JPH05217885A (en) * | 1992-01-31 | 1993-08-27 | Canon Inc | Wafer edge exposure apparatus |
| CN1672242A (en) * | 2002-07-25 | 2005-09-21 | 浜松光子学株式会社 | Light conducting device |
| JP2007194583A (en) * | 2005-12-21 | 2007-08-02 | Ａｒｋ Ｔｅｃｈ株式会社 | Light source device for peripheral exposure |
| CN1991424A (en) * | 2005-12-28 | 2007-07-04 | 豪雅冠得股份有限公司 | Light guide and light irradiation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107748484A (en) * | 2017-11-22 | 2018-03-02 | 武汉新芯集成电路制造有限公司 | A kind of measuring method of minimum exposure energy |
| CN110275397A (en) * | 2018-03-16 | 2019-09-24 | 豪雅冠得股份有限公司 | Light irradiation device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI596443B (en) | 2017-08-21 |
| TW201614387A (en) | 2016-04-16 |
| JP6082721B2 (en) | 2017-02-15 |
| KR20160039545A (en) | 2016-04-11 |
| JP2016072543A (en) | 2016-05-09 |
| CN105487340B (en) | 2018-03-23 |
| KR101985848B1 (en) | 2019-09-03 |
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