CN104278234B - Preparation technology for self-lubricating coating with wide temperature range of room temperature to 800 DEG C - Google Patents
Preparation technology for self-lubricating coating with wide temperature range of room temperature to 800 DEG C Download PDFInfo
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- CN104278234B CN104278234B CN201310274061.2A CN201310274061A CN104278234B CN 104278234 B CN104278234 B CN 104278234B CN 201310274061 A CN201310274061 A CN 201310274061A CN 104278234 B CN104278234 B CN 104278234B
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- 238000000576 coating method Methods 0.000 title claims abstract description 36
- 239000011248 coating agent Substances 0.000 title claims abstract description 30
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000007733 ion plating Methods 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 40
- 229910052786 argon Inorganic materials 0.000 claims description 20
- 239000011651 chromium Substances 0.000 claims description 18
- 230000007704 transition Effects 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 2
- 229910001311 M2 high speed steel Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000010891 electric arc Methods 0.000 claims description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000012805 post-processing Methods 0.000 claims 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011888 foil Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004372 laser cladding Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种室温到800℃宽温域内均具有自润滑性能的氧化铬涂层的制备技术。The invention relates to a preparation technology of a chromium oxide coating with self-lubricating properties in a wide temperature range from room temperature to 800°C.
背景技术Background technique
考虑到航空航天、冶炼化工、热核等高技术产业对宽温域固体润滑涂层的需求,研究人员对其的探索逐渐增多,但到目前为止还没有发现一种单一的涂层能够满足在室温到高温宽温域内都具有较低的磨损率和较小的摩擦系数,因此对其进行研究与开发具有重要的科学价值和应用前景。涂层的沉积技术主要包括气相沉积技术、热喷涂技术、激光熔覆技术等,尤其以气相沉积技术和热喷涂技术的应用较为成熟。Considering the demand of high-tech industries such as aerospace, smelting and chemical industry, and thermonuclear for solid lubricating coatings in a wide temperature range, researchers have gradually explored them, but so far no single coating has been found that can meet the requirements of solid lubrication coatings in the wide temperature range. It has a low wear rate and a small friction coefficient in a wide temperature range from room temperature to high temperature, so its research and development has important scientific value and application prospects. Coating deposition technology mainly includes vapor deposition technology, thermal spraying technology, laser cladding technology, etc., especially the application of vapor deposition technology and thermal spraying technology is more mature.
电弧离子镀是一种典型的物理气相沉积方法制备薄膜的技术。其原理是在真空腔内,基底与蒸发源施加一电场,当腔体压力适当时,蒸发源与基底之间会产生辉光放电或弧光放电,在和电子碰撞过程中,会形成气体离子和靶材的离子,这些离子在电场中被加速飞向基底,于是在离子轰击影响下发生凝结而形成薄膜。与磁控溅射相比,其具有以下优点:(1)薄膜与基底的结合较好;(2)薄膜沉积速率较快;(3)薄膜绕镀性较好;(4)薄膜致密度提高;(5)金属离化率高,有利于薄膜的均匀性; (6)一弧多用,既是加热源、又是预轰击净化源和离化源,(7)靶材利用率较高等。Arc ion plating is a typical physical vapor deposition method to prepare thin films. The principle is that in the vacuum chamber, an electric field is applied between the substrate and the evaporation source. When the pressure in the chamber is appropriate, glow discharge or arc discharge will be generated between the evaporation source and the substrate. During the collision with electrons, gas ions and The ions of the target, which are accelerated in the electric field and fly to the substrate, then condense under the influence of ion bombardment to form a thin film. Compared with magnetron sputtering, it has the following advantages: (1) The combination of the film and the substrate is better; (2) The deposition rate of the film is faster; (3) The coating of the film is better; (4) The density of the film is improved ; (5) High metal ionization rate, which is beneficial to the uniformity of the film; (6) One arc is multi-purpose, not only a heating source, but also a pre-bombardment purification source and ionization source, (7) High utilization rate of the target, etc.
氧化铬长期以来一直被认为是最硬的氧化物之一,同时其具有良好的耐腐蚀性和特有的光学性能,被广泛应用于太阳光吸收材料和影印模具等。但目前多采用非磁控溅射方法制备氧化铬涂层,其对于复杂形状零件的绕镀性较差,同时其氧含量较低,从而影响了涂层的摩擦学性能,限制了氧化铬涂层在宽温域内的应用。Chromium oxide has long been considered one of the hardest oxides, and it has good corrosion resistance and unique optical properties, and is widely used in solar light absorbing materials and photocopying molds. However, at present, non-magnetron sputtering methods are mostly used to prepare chromium oxide coatings, which have poor wrapping properties for parts with complex shapes and low oxygen content, which affects the tribological properties of the coatings and limits the chromium oxide coatings. Layer application in a wide temperature range.
发明内容Contents of the invention
本发明的主要目的在于提供一种室温到800℃宽温域内均具有自润滑性能的涂层材料的制备技术。The main purpose of the present invention is to provide a preparation technology of a coating material with self-lubricating properties in a wide temperature range from room temperature to 800°C.
本发明的目的可通过如下技术方案实现:The purpose of the present invention can be achieved through the following technical solutions:
一种室温到800℃宽温域自润滑涂层的制备技术,采用电弧离子镀的方法制备,其特征在于该方法涂层的沉积过程是在配有电弧的镀膜机的真空腔体内完成,具体步骤为:A preparation technology for a self-lubricating coating in a wide temperature range from room temperature to 800°C, which is prepared by arc ion plating, and is characterized in that the coating deposition process of this method is completed in a vacuum chamber of a coating machine equipped with an arc, specifically The steps are:
A、活化清洗表面:将光滑、洁净的金属基底置于腔体之内,抽真空1.5×10-2Pa以下,通入氩气作为离化气体,打开脉冲偏压电源,辉光放电产生等离子体,对基底表面进行活化清洗;A. Activate and clean the surface: put a smooth and clean metal substrate in the cavity, vacuum below 1.5×10 -2 Pa, pass in argon gas as the ionization gas, turn on the pulse bias power supply, and glow discharge to generate plasma Body, activate and clean the surface of the substrate;
B、过渡层制备:清洗完毕后,利用电弧离子镀的方法首先沉积铬过渡层,选用铬柱靶作为电弧离子镀靶材,以氩气作为离化气体,基体附加负偏压,沉积铬过渡层后关闭;B. Preparation of the transition layer: After cleaning, use the method of arc ion plating to deposit the chromium transition layer first, select the chromium column target as the arc ion plating target material, use argon as the ionization gas, add a negative bias to the substrate, and deposit the chromium transition layer close after layer;
C、沉积氧化铬涂层:电弧离子镀靶材选择依然是铬柱靶,再通入氧气,通过控制氮气和氧气的流量比以及电流和基底施加偏压的大小控制涂层的结构;C. Deposition of chromium oxide coating: The arc ion plating target is still a chromium column target, and then oxygen is introduced to control the structure of the coating by controlling the flow ratio of nitrogen and oxygen, as well as the current and the bias voltage applied to the substrate;
D、涂层后处理: 进行退火处理,然后自然冷却至室温。D. Coating post-treatment: Carry out annealing treatment, and then naturally cool to room temperature.
在步骤A中,金属基底选自M2高速钢、镍基合金钢、不锈钢或铝合金,等离子体活化工艺参数范围为:腔体气压0.4~2.0Pa,偏压-100V~-1000V。In step A, the metal substrate is selected from M2 high-speed steel, nickel-based alloy steel, stainless steel or aluminum alloy, and the range of plasma activation process parameters is: cavity pressure 0.4-2.0Pa, bias voltage -100V--1000V.
在步骤B中,铬过渡层工艺参数范围为:腔体气压0.2~1.0Pa,溅射电流1~200 A,脉冲偏压-50~-500V,过渡层厚度30~500 nm。In step B, the process parameters of the chromium transition layer are in the range of: chamber pressure 0.2-1.0 Pa, sputtering current 1-200 A, pulse bias voltage -50-500 V, transition layer thickness 30-500 nm.
在步骤C中,氧化铬层工艺参数范围为:腔体气压0.2~1.0Pa,O2/Ar流量比为1:5~5:1,溅射电流1~200 A,脉冲偏压-50~-500V,涂层厚度0.5~5um。In step C, the range of process parameters for the chromium oxide layer is: chamber pressure 0.2-1.0Pa, O2/Ar flow ratio 1:5-5:1, sputtering current 1-200 A, pulse bias -50-- 500V, coating thickness 0.5~5um.
在步骤D中,退火工艺参数范围为:退火温度200~1000℃,升温速度1~20℃/min,保温时间为0.5~5h。In step D, the range of annealing process parameters is: annealing temperature 200-1000°C, heating rate 1-20°C/min, holding time 0.5-5h.
该薄膜的主要成分是Cr与Cr2O3,其断面结构如图1所示。Cr过渡层主要是为了增加薄膜与基体在宽温域范围内的结合力,Cr2O3是其减磨耐磨相。The main components of the film are Cr and Cr 2 O 3 , and its cross-sectional structure is shown in Figure 1. The Cr transition layer is mainly to increase the bonding force between the film and the substrate in a wide temperature range, and Cr2O3 is its wear-reducing and wear-resistant phase.
本发明产品的主要性能指标如下表所示:The main performance index of product of the present invention is as shown in the following table:
本发明采用电弧离子镀的方法制备氧化铬涂层。该方法与采用磁控溅射制备的氧化铬涂层相比,电弧离子镀方法制备的氧化铬涂层,增加了对于复杂样品的绕镀性,涂层与基底的结合力更强,涂层的氧含量也有所提高,从而提高了涂层的机械性能、抗氧化性能和摩擦学性能等。经考察,采用电弧离子镀方法制备的氧化铬涂层在室温到800℃宽温域范围内均具有较小的摩擦系数(0.15-0.4)和较低的磨损率,尤其是在800℃摩擦系数在0.15左右,磨损率也在10-7mm3/Nm左右。鉴于其良好的机械性能和摩擦学性能,氧化铬涂层可应用于航空发动机的箔片密封,气体轴承等工作在室温到800℃宽温域范围内的摩擦运动部件。The invention adopts the method of arc ion plating to prepare the chromium oxide coating. Compared with the chromium oxide coating prepared by magnetron sputtering, the chromium oxide coating prepared by the arc ion plating method has increased the wrapping ability for complex samples, and the bonding force between the coating and the substrate is stronger, and the coating The oxygen content is also increased, thereby improving the mechanical properties, oxidation resistance and tribological properties of the coating. After investigation, the chromium oxide coating prepared by arc ion plating method has a small friction coefficient (0.15-0.4) and a low wear rate in the wide temperature range from room temperature to 800 °C, especially at 800 °C. At around 0.15, the wear rate is also around 10 -7 mm 3 /Nm. In view of its good mechanical properties and tribological properties, chromium oxide coatings can be applied to foil seals of aeroengines, gas bearings and other frictional moving parts that work in a wide temperature range from room temperature to 800 °C.
附图说明Description of drawings
图1为Cr2O3薄膜的断面的扫描电镜形貌图。Fig. 1 is a scanning electron microscope topography diagram of a section of a Cr 2 O 3 thin film.
图2为Cr2O3涂层室温到800℃的摩擦系数。Figure 2 shows the friction coefficient of Cr 2 O 3 coating from room temperature to 800°C.
具体实施方式detailed description
实施例1:Example 1:
A. 样品预处理:将抛光至镜面的不锈钢用蒸馏水、丙酮分别进行超声清洗10min,随即用氮气吹干,置于沉积室。将真空腔内气压抽至1.5×10-2 Pa以下,通入高纯氩气至气压为1.5 Pa。 打开脉冲偏压电源,调节电压值为-500 V,进行氩等离子体轰击清洗20min。A. Sample pretreatment: The stainless steel polished to the mirror surface was ultrasonically cleaned with distilled water and acetone for 10 minutes, then dried with nitrogen and placed in the deposition chamber. Evacuate the air pressure in the vacuum chamber to below 1.5×10 -2 Pa, and inject high-purity argon until the air pressure is 1.5 Pa. Turn on the pulse bias power supply, adjust the voltage value to -500 V, and perform argon plasma bombardment cleaning for 20 min.
B. 沉积铬过渡层:调节氩气流量,使腔体气压维持在0.45Pa左右,打开柱弧电源,调节电流为90A,偏压为-200V,待过渡层沉积约200nm时关闭。B. Deposit chromium transition layer: adjust the flow rate of argon gas to maintain the chamber pressure at about 0.45Pa, turn on the column arc power supply, adjust the current to 90A, and the bias voltage to -200V, and turn it off when the transition layer is about 200nm deposited.
C. 沉积氧化铬层:通入高纯氩气和氧气的混合气体,使腔体压力维持在0.45Pa左右,控制氩气和氧气的流量比为1:2,打开柱弧电源,调节电流为90A,偏压为-200V,沉积约2h后冷却,当温度降至50℃以下时释放真空开腔取样。C. Deposit chromium oxide layer: feed a mixed gas of high-purity argon and oxygen to maintain the chamber pressure at about 0.45Pa, control the flow ratio of argon and oxygen to 1:2, turn on the column arc power supply, and adjust the current to 90A, the bias voltage is -200V, after deposition for about 2 hours, cool down, and when the temperature drops below 50°C, release the vacuum and open the cavity for sampling.
D. 样品后处理:样品在马弗炉中400℃下保温2h。D. Sample post-treatment: The sample is kept in a muffle furnace at 400°C for 2 hours.
实施例2:Example 2:
A. 样品预处理:将抛光至镜面的铝合金用蒸馏水、丙酮分别进行超声清洗10min,随即用氮气吹干,置于沉积室。将真空腔内气压抽至1.5×10-2 Pa以下,通入高纯氩气至气压为1.0 Pa。 打开脉冲偏压电源,调节电压值为-400 V,进行氩等离子体轰击清洗15min。A. Sample pretreatment: The aluminum alloy polished to the mirror surface was ultrasonically cleaned with distilled water and acetone for 10 minutes, then dried with nitrogen and placed in the deposition chamber. Evacuate the air pressure in the vacuum chamber to below 1.5×10 -2 Pa, and inject high-purity argon until the air pressure is 1.0 Pa. Turn on the pulse bias power supply, adjust the voltage value to -400 V, and carry out argon plasma bombardment cleaning for 15 min.
B. 沉积铬过渡层:调节氩气流量,使腔体气压维持在0.45Pa左右,打开柱弧电源,调节电流为100A,偏压为-300V,待过渡层沉积约200nm时关闭。B. Deposit chromium transition layer: adjust the flow of argon gas to maintain the chamber pressure at about 0.45Pa, turn on the column arc power supply, adjust the current to 100A, and the bias voltage to -300V, and turn it off when the transition layer is about 200nm deposited.
C. 沉积氧化铬层:通入高纯氩气和氧气的混合气体,使腔体压力维持在0.45Pa左右,控制氩气和氧气的流量比为1:1,打开柱弧电源,调节电流为100A,偏压为-300V,沉积约2h后冷却,当温度降至50℃以下时释放真空开腔取样。C. Deposit chromium oxide layer: feed a mixed gas of high-purity argon and oxygen to maintain the chamber pressure at about 0.45Pa, control the flow ratio of argon and oxygen to 1:1, turn on the column arc power supply, and adjust the current to 100A, the bias voltage is -300V, after deposition for about 2 hours, cool down, and when the temperature drops below 50°C, release the vacuum and open the cavity for sampling.
D. 样品后处理:样品在马弗炉中500℃下保温3h。D. Sample post-treatment: The sample is kept in a muffle furnace at 500°C for 3 hours.
实施例3:Example 3:
A. 样品预处理:将抛光至镜面的高温钢用蒸馏水、丙酮分别进行超声清洗10min,随即用氮气吹干,置于沉积室。将真空腔内气压抽至1.5×10-2 Pa以下,通入高纯氩气至气压为2.0 Pa。 打开脉冲偏压电源,调节电压值为-700 V,进行氩等离子体轰击清洗50min。A. Sample pretreatment: The high-temperature steel polished to the mirror surface was ultrasonically cleaned with distilled water and acetone for 10 minutes, then dried with nitrogen and placed in the deposition chamber. Evacuate the air pressure in the vacuum chamber to below 1.5×10 -2 Pa, and inject high-purity argon until the air pressure is 2.0 Pa. Turn on the pulse bias power supply, adjust the voltage value to -700 V, and perform argon plasma bombardment cleaning for 50 min.
B. 沉积铬过渡层:调节氩气流量,使腔体气压维持在0.45Pa左右,打开柱弧电源,调节电流为80A,偏压为-400V,待过渡层沉积约200nm时关闭。B. Deposit chromium transition layer: adjust the flow of argon gas to maintain the chamber pressure at about 0.45Pa, turn on the column arc power supply, adjust the current to 80A, and the bias voltage to -400V, and turn it off when the transition layer is about 200nm deposited.
C. 沉积氧化铬层:通入高纯氩气和氧气的混合气体,使腔体压力维持在0.45Pa左右,控制氩气和氧气的流量比为2:1,打开柱弧电源,调节电流为50A,偏压为-400V,沉积约2h后冷却,当温度降至50℃以下时释放真空开腔取样。C. Deposit chromium oxide layer: feed a mixed gas of high-purity argon and oxygen to maintain the chamber pressure at about 0.45Pa, control the flow ratio of argon and oxygen to 2:1, turn on the column arc power supply, and adjust the current to 50A, the bias voltage is -400V, after deposition for about 2 hours, cool down, and when the temperature drops below 50°C, release the vacuum and open the cavity for sampling.
D. 样品后处理:样品在马弗炉中800℃下保温1h。D. Sample post-treatment: The sample is kept in a muffle furnace at 800°C for 1 hour.
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