CN103441746B - SAW filter integrated encapsulation structure and its method for packing - Google Patents
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- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 77
- 238000004806 packaging method and process Methods 0.000 claims abstract description 44
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Abstract
Description
技术领域technical field
本发明涉及一种电子封装结构和封装方法，尤其是一种声表面波滤波器集成封装结构及其封装方法，属于声表面波技术领域。The invention relates to an electronic packaging structure and packaging method, in particular to an integrated packaging structure and packaging method of a surface acoustic wave filter, belonging to the technical field of surface acoustic wave.
背景技术Background technique
声表面波滤波器在接入应用电路时，常常需要在其与前后级电路之间设置调谐电路，以实现器件与其前后级电路之间电学参数的匹配，从而发挥声表面波滤波器的最佳性能。现有技术中的声表面波滤波器一般采用独立封装方法，即每个滤波器芯片单独置于一个封装外壳中，而匹配调谐电路设置在器件封装之外，由此带来的不足之处是声表面波滤波器和外匹配调谐电路之间的互连线结构较为复杂，损耗较大，抗干扰能力差，进而对声表面波滤波器应用系统的总体性能产生明显不利影响。When the surface acoustic wave filter is connected to the application circuit, it is often necessary to set a tuning circuit between it and the front and rear circuits to achieve the matching of the electrical parameters between the device and the front and rear circuits, so as to exert the best performance of the surface acoustic wave filter. performance. The surface acoustic wave filter in the prior art generally adopts an independent packaging method, that is, each filter chip is placed in a package shell separately, and the matching tuning circuit is arranged outside the device package. The disadvantages brought about by this are The structure of the interconnection between the SAW filter and the external matching tuning circuit is relatively complex, the loss is large, and the anti-interference ability is poor, which will have a significant adverse effect on the overall performance of the SAW filter application system.
发明内容Contents of the invention
本发明的目的是针对上述现有技术的不足，克服现有技术中声表面波滤波器芯片和匹配调谐电路分置于封装体内外，互连线结构复杂，损耗大，抗干扰能力差，进而对声表面波滤波器应用系统的总体性能产生明显不利影响的缺点，从而提供一种声表面波滤波器集成封装结构及其封装方法。The purpose of the present invention is to address the above-mentioned deficiencies in the prior art, to overcome the prior art in which the surface acoustic wave filter chip and the matching tuning circuit are separated inside and outside the package, the interconnection wire structure is complicated, the loss is large, and the anti-interference ability is poor, and then Disadvantages that have an obvious adverse effect on the overall performance of a surface acoustic wave filter application system provide an integrated package structure and a package method for a surface acoustic wave filter.
本发明的目的是通过以下技术方案实现的：声表面波滤波器集成封装结构，包括声表面波滤波器芯片、与声表面波滤波器芯片电气连接的匹配调谐电路以及封装外壳，封装外壳由封装底座、封装底座的外引脚、封帽构成，封帽覆盖在封装底座上，其特征是，设有调谐基板，调谐基板设置在所述封装外壳内，所述匹配调谐电路制作在调谐基板上；所述声表面波滤波器芯片粘接在调谐基板上，并通过键合引线与匹配调谐电路电气连接；所述调谐基板粘接在封装底座上，并通过键合引线与封装底座的外引脚电气连接。The purpose of the present invention is achieved by the following technical proposals: the surface acoustic wave filter integrated packaging structure, including a surface acoustic wave filter chip, a matching tuning circuit electrically connected with the surface acoustic wave filter chip, and a package shell, the package shell is composed of a package The base, the outer pins of the packaging base, and the sealing cap are formed. The sealing cap is covered on the packaging base. It is characterized in that a tuning substrate is provided, and the tuning substrate is arranged in the packaging shell, and the matching tuning circuit is made on the tuning substrate. ; The surface acoustic wave filter chip is bonded on the tuning substrate, and is electrically connected with the matching tuning circuit through the bonding wire; pin electrical connections.
所述调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区，其正面周边区域设置匹配调谐电路，其背面设有大面积接地金属膜；所述声表面波滤波器芯片粘接在芯片粘接区，所述芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔与接地金属膜电气连接，接地金属膜通过导电银胶与封装底座电气连接。The tuning substrate is a high-frequency double-sided printed circuit board, the middle area of the front is a chip bonding area, a matching tuning circuit is arranged in the peripheral area of the front, and a large-area grounded metal film is arranged on the back; the surface acoustic wave filter The chip is bonded in the chip bonding area, and the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the ground metal film through the via holes on the tuning substrate, and the ground metal film is connected to the package base through conductive silver glue Electrical connections.
所述键合引线包括信号键合引线、接地键合引线，信号键合引线依次连接声表面波滤波器芯片的信号电极和匹配调谐电路的信号电极以及匹配调谐电路的信号电极和封装底座的外引脚；所述接地键合引线连接声表面波滤波器芯片的地电极和芯片粘接区的地电极。The bonding wires include signal bonding wires and grounding bonding wires, and the signal bonding wires are sequentially connected to the signal electrodes of the surface acoustic wave filter chip and the signal electrodes of the matching tuning circuit and the signal electrodes of the matching tuning circuit and the outer surface of the package base. pin; the ground bonding wire connects the ground electrode of the surface acoustic wave filter chip and the ground electrode of the chip bonding area.
声表面波滤波器集成封装方法，其特征是，包括以下步骤：The surface acoustic wave filter integrated packaging method is characterized in that it comprises the following steps:
（1）制作声表面波滤波器芯片和调谐基板，所述调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区，其正面周边区域设置匹配调谐电路，其背面设有大面积接地金属膜；(1) Make the surface acoustic wave filter chip and the tuning substrate. The tuning substrate is a high-frequency double-sided printed circuit board. The middle area of the front side is the chip bonding area. There is a large area of grounded metal film;
（2）用粘片红胶将声表面波滤波器芯片粘接在调谐基板的芯片粘接区；(2) Bond the surface acoustic wave filter chip to the chip bonding area of the tuning substrate with sticky red glue;
（3）采用超声压焊方法键合硅铝丝引线，用信号键合引线连接声表面波滤波器芯片的信号电极和匹配调谐电路的信号电极；用接地键合引线连接声表面波滤波器芯片的地电极和芯片粘接区的地电极；所述芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔与接地金属膜电气连接；(3) Use the ultrasonic pressure welding method to bond the silicon-aluminum wire lead, and use the signal bonding wire to connect the signal electrode of the surface acoustic wave filter chip and the signal electrode of the matching tuning circuit; use the ground bonding wire to connect the surface acoustic wave filter chip The ground electrode of the chip bonding area and the ground electrode of the chip bonding area; the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the grounding metal film through the via holes on the tuning substrate;
（4）用导电银胶将调谐基板粘接在封装底座上，并使得调谐基板上的接地金属膜与封装底座电气连接；(4) Bond the tuning substrate to the package base with conductive silver glue, and electrically connect the grounding metal film on the tuning substrate to the package base;
（5）采用超声压焊方法键合硅铝丝引线，用信号键合引线连接匹配调谐电路的信号电极和封装底座的外引脚；(5) Use ultrasonic pressure welding to bond silicon-aluminum wire leads, and use signal bonding wires to connect the signal electrodes of the matching tuning circuit and the outer pins of the package base;
（6）采用电容储能焊接方法将封帽覆盖在封装底座上，最终完成声表面波滤波器集成封装。(6) The sealing cap is covered on the packaging base by the capacitor energy storage welding method, and finally the integrated packaging of the surface acoustic wave filter is completed.
本发明将声表面波滤波器芯片和匹配调谐电路集成封装在同一封装体内，简化了声表面波滤波器芯片、匹配调谐电路和应用电路之间的互连结构，具有结构紧凑，损耗小，抗干扰能力强等优点，有助于改善声表面波滤波器应用系统的总体性能，所涉及集成封装结构的制作方法与常规声表面波滤波器及其应用电路的加工工艺兼容，易于同步实现。The invention integrates the surface acoustic wave filter chip and the matching tuning circuit into the same package body, simplifies the interconnection structure between the surface acoustic wave filter chip, the matching tuning circuit and the application circuit, and has the advantages of compact structure, small loss, and The strong interference ability and other advantages help to improve the overall performance of the surface acoustic wave filter application system. The manufacturing method of the integrated packaging structure involved is compatible with the processing technology of the conventional surface acoustic wave filter and its application circuit, and is easy to realize synchronously.
附图说明Description of drawings
图1是本发明的总体结构示意图；Fig. 1 is the overall structural representation of the present invention;
图2是图1中调谐基板的结构示意图；Fig. 2 is a schematic structural diagram of the tuning substrate in Fig. 1;
图3是本发明用于封装单声表面波滤波器芯片的结构示意图；Fig. 3 is a schematic structural view of the present invention for packaging a single surface acoustic wave filter chip;
图4是本发明用于封装单片集成声表面波滤波器组芯片的结构示意图；Fig. 4 is a schematic structural view of the present invention for packaging a monolithic integrated surface acoustic wave filter group chip;
图中：1声表面波滤波器芯片、11单声表面波滤波器芯片、12单片集成声表面波滤波器组芯片、101芯片信号电极、102芯片地电极、2调谐基板、21芯片粘接区、22匹配调谐电路、23过孔、24接地金属膜、201匹配调谐电路信号电极、202匹配调谐电路地电极、203芯片粘接区地电极、3键合引线、31信号键合引线、32接地键合引线、4封装底座、41封装底座的外引脚、5封帽。In the figure: 1 surface acoustic wave filter chip, 11 single surface acoustic wave filter chip, 12 monolithic integrated surface acoustic wave filter group chip, 101 chip signal electrode, 102 chip ground electrode, 2 tuning substrate, 21 chip bonding area, 22 matching tuning circuit, 23 via hole, 24 grounding metal film, 201 matching tuning circuit signal electrode, 202 matching tuning circuit ground electrode, 203 chip bonding area ground electrode, 3 bonding wire, 31 signal bonding wire, 32 Ground Bond Lead, 4 Package Base, 41 Outer Pins of Package Base, 5 Caps.
具体实施方式detailed description
下面结合附图和具体实施例对本发明作进一步说明：The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:
实施例1Example 1
声表面波滤波器集成封装结构，包括声表面波滤波器芯片1、与声表面波滤波器芯片电气连接的匹配调谐电路22以及封装外壳，封装外壳由封装底座4、封装底座的外引脚41、封帽5构成，封帽覆盖在封装底座上。The surface acoustic wave filter integrated packaging structure includes a surface acoustic wave filter chip 1, a matching tuning circuit 22 electrically connected to the surface acoustic wave filter chip, and a package shell, the package shell is composed of a package base 4 and an outer pin 41 of the package base 1. The sealing cap 5 is formed, and the sealing cap is covered on the packaging base.
设有调谐基板2，调谐基板设置在所述封装外壳内，调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区21，其正面周边区域设置匹配调谐电路22，其背面设有大面积接地金属膜24。A tuning substrate 2 is provided, and the tuning substrate is arranged in the package shell. The tuning substrate is a high-frequency double-sided printed circuit board. A large-area grounded metal film 24 is provided on the back.
匹配调谐电路22制作在调谐基板上，声表面波滤波器芯片粘接在芯片粘接区。键合引线包括信号键合引线31、接地键合引线32，信号键合引线依次连接声表面波滤波器芯片的信号电极101和匹配调谐电路的信号电极201以及匹配调谐电路的信号电极201和封装底座的外引脚41。The matching tuning circuit 22 is fabricated on the tuning substrate, and the surface acoustic wave filter chip is glued on the chip bonding area. The bonding wires include signal bonding wires 31 and grounding bonding wires 32, and the signal bonding wires are sequentially connected to the signal electrodes 101 of the surface acoustic wave filter chip and the signal electrodes 201 of the matching tuning circuit and the signal electrodes 201 of the matching tuning circuit and the package The outer pin 41 of the base.
接地键合引线连接声表面波滤波器芯片的地电极102和芯片粘接区的地电极203。芯片粘接区的地电极203和匹配调谐电路的地电极202分别通过调谐基板上的过孔23与接地金属膜24电气连接，接地金属膜通过导电银胶与封装底座4电气连接。The ground bonding wire connects the ground electrode 102 of the surface acoustic wave filter chip and the ground electrode 203 of the chip bonding area. The ground electrode 203 of the die bonding area and the ground electrode 202 of the matching tuning circuit are respectively electrically connected to the ground metal film 24 through the via hole 23 on the tuning substrate, and the ground metal film is electrically connected to the package base 4 through conductive silver glue.
声表面波滤波器集成封装方法，包括以下步骤：A surface acoustic wave filter integrated packaging method, comprising the following steps:
（1）制作声表面波滤波器芯片1和调谐基板2，所述调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区21，其正面周边区域设置匹配调谐电路22，其背面设有大面积接地金属膜24；(1) Fabricate the surface acoustic wave filter chip 1 and the tuning substrate 2, the tuning substrate is a high-frequency double-sided printed circuit board, the middle area of the front is the chip bonding area 21, and the matching tuning circuit 22 is set in the peripheral area of the front , the back of which is provided with a large-area grounded metal film 24;
（2）用粘片红胶将声表面波滤波器芯片粘接在调谐基板的芯片粘接区；(2) Bond the surface acoustic wave filter chip to the chip bonding area of the tuning substrate with sticky red glue;
（3）采用超声压焊方法键合硅铝丝引线，用信号键合引线31连接声表面波滤波器芯片的信号电极101和匹配调谐电路的信号电极201；用接地键合引线32连接声表面波滤波器芯片的地电极102和芯片粘接区的地电极203；所述芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔23与接地金属膜24电气连接；(3) Use the ultrasonic pressure welding method to bond the silicon-aluminum wire leads, and use the signal bonding wire 31 to connect the signal electrode 101 of the SAW filter chip and the signal electrode 201 of the matching tuning circuit; use the ground bonding wire 32 to connect the SAW filter chip The ground electrode 102 of the wave filter chip and the ground electrode 203 of the chip bonding area; the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the ground metal film 24 through the via hole 23 on the tuning substrate ;
（4）用导电银胶将调谐基板粘接在封装底座上，并使得调谐基板上的接地金属膜24与封装底座4电气连接；(4) bonding the tuning substrate to the package base with conductive silver glue, and electrically connecting the ground metal film 24 on the tuning substrate to the package base 4;
（5）采用超声压焊方法键合硅铝丝引线，用信号键合引线连接匹配调谐电路的信号电极201和封装底座的外引脚41；(5) Using ultrasonic pressure welding to bond silicon-aluminum wire leads, and using signal bonding wires to connect the signal electrodes 201 of the matching tuning circuit and the outer pins 41 of the package base;
（6）采用电容储能焊接方法将封帽5覆盖在封装底座4上，最终完成声表面波滤波器集成封装。(6) The cap 5 is covered on the package base 4 by means of capacitor energy storage welding, and the integrated package of the surface acoustic wave filter is finally completed.
实施例2Example 2
本实施例为单声表面波滤波器芯片与单信道滤波器匹配调谐电路的集成封装。This embodiment is an integrated package of a single surface acoustic wave filter chip and a matching tuning circuit for a single channel filter.
声表面波滤波器集成封装结构，包括单声表面波滤波器芯片11、与单声表面波滤波器芯片电气连接的单信道滤波器匹配调谐电路22以及封装外壳。封装外壳由封装底座4、封装底座的外引脚41、封帽5构成，封帽覆盖在封装底座上。The surface acoustic wave filter integrated packaging structure includes a single surface acoustic wave filter chip 11, a single channel filter matching and tuning circuit 22 electrically connected to the single surface acoustic wave filter chip, and a packaging shell. The packaging shell is composed of a packaging base 4, outer pins 41 of the packaging base, and a sealing cap 5, and the sealing cap covers the packaging base.
设有调谐基板2，其正面中部区域为芯片粘接区21，其正面周边区域设置单信道滤波器匹配调谐电路22，其背面设有大面积接地金属膜24，调谐基板2设置在封装外壳内，单信道滤波器匹配调谐电路22设置在调谐基板上。A tuning substrate 2 is provided, the middle area of the front is a chip bonding area 21, a single-channel filter matching tuning circuit 22 is provided in the peripheral area of the front, a large-area grounded metal film 24 is provided on the back, and the tuning substrate 2 is arranged in the packaging shell , the single-channel filter matching tuning circuit 22 is arranged on the tuning substrate.
单声表面波滤波器芯片11粘接在调谐基板2中部芯片粘接区21，调谐基板2粘接在封装基座4上，覆以封帽5。The mono surface wave filter chip 11 is bonded to the chip bonding area 21 in the middle of the tuning substrate 2 , and the tuning substrate 2 is bonded to the packaging base 4 and covered with a sealing cap 5 .
如图2、图3所示，键合引线31依次连接芯片信号电极101和匹配调谐电路信号电极201及匹配调谐电路信号电极201和封装底座4的外引脚41，键合引线32连接芯片地电极102和芯片粘接区地电极203；芯片粘接区地电极203和匹配调谐电路地电极202通过过孔23与调谐基板背面接地金属膜24相连，调谐基板背面接地金属膜24通过导电银胶与封装底座4电气连接。As shown in Fig. 2 and Fig. 3, the bonding wire 31 is sequentially connected to the chip signal electrode 101 and the matching tuning circuit signal electrode 201 and the matching tuning circuit signal electrode 201 and the outer pin 41 of the package base 4, and the bonding wire 32 is connected to the chip ground The electrode 102 and the electrode 203 of the chip bonding area; the electrode 203 of the chip bonding area and the electrode 202 of the matching tuning circuit are connected to the ground metal film 24 on the back of the tuning substrate through the via hole 23, and the ground metal film 24 on the back of the tuning substrate is passed through the conductive silver glue It is electrically connected with the package base 4 .
本实施例中，声表面波滤波器芯片为制作在128°Y-X铌酸锂压电单晶基片上的144.45MHz声表面波滤波器，调谐基板的材料为双面敷铜的高频FR4环氧玻璃纤维基板，芯片粘接剂为BS-6600K型粘片红胶，基板粘接剂为A6/HA6型导电银胶，封装基座和封帽为带有4个外引脚的SF-4全铜封装套件。In this embodiment, the surface acoustic wave filter chip is a 144.45MHz surface acoustic wave filter made on a 128°Y-X lithium niobate piezoelectric single crystal substrate, and the material of the tuning substrate is high-frequency FR4 epoxy coated with copper on both sides. Glass fiber substrate, chip adhesive is BS-6600K type sticky red glue, substrate adhesive is A6/HA6 type conductive silver glue, package base and sealing cap are SF-4 full Copper Package Kit.
本实施例的实施步骤为：The implementation steps of this embodiment are:
（1）制作单声表面波滤波器芯片11和单信道滤波器调谐基板2；调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区21，其正面周边区域设置匹配调谐电路22，其背面设有大面积接地金属膜24；(1) Manufacture the single surface acoustic wave filter chip 11 and the single channel filter tuning substrate 2; the tuning substrate is a high-frequency double-sided printed circuit board, the middle area of the front is the chip bonding area 21, and the surrounding area of the front is set to match The tuning circuit 22 has a large-area grounded metal film 24 on its back;
（2）用粘片红胶将单声表面波滤波器芯片11粘接在调谐基板2上；(2) Bond the mono surface acoustic wave filter chip 11 on the tuning substrate 2 with adhesive red glue;
（3）采用超声压焊方法键合硅铝丝引线，用信号键合引线31连接声表面波滤波器芯片的信号电极101和匹配调谐电路的信号电极201；用接地键合引线32连接声表面波滤波器芯片的地电极102和芯片粘接区的地电极203；芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔23与接地金属膜24电气连接；(3) Use the ultrasonic pressure welding method to bond the silicon-aluminum wire leads, and use the signal bonding wire 31 to connect the signal electrode 101 of the SAW filter chip and the signal electrode 201 of the matching tuning circuit; use the ground bonding wire 32 to connect the SAW filter chip The ground electrode 102 of the wave filter chip and the ground electrode 203 of the chip bonding area; the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the ground metal film 24 through the via hole 23 on the tuning substrate;
（4）用导电银胶将调谐基板2粘接在封装底座4上，并使得调谐基板上的接地金属膜24与封装底座4电气连接；(4) bonding the tuning substrate 2 to the package base 4 with conductive silver glue, and electrically connecting the ground metal film 24 on the tuning substrate to the package base 4;
（5）采用超声压焊方法键合硅铝丝引线，用信号键合引线连接匹配调谐电路的信号电极201和封装底座的外引脚41；(5) Using ultrasonic pressure welding to bond silicon-aluminum wire leads, and using signal bonding wires to connect the signal electrodes 201 of the matching tuning circuit and the outer pins 41 of the package base;
（6）采用电容储能焊接方法将封帽5覆盖在封装底座4上，最终完成声表面波滤波器集成封装。(6) The cap 5 is covered on the package base 4 by means of capacitor energy storage welding, and the integrated package of the surface acoustic wave filter is finally completed.
实施例3Example 3
本实施例为单片集成声表面波滤波器组芯片与多信道滤波器匹配调谐电路的集成封装。This embodiment is an integrated packaging of a monolithic surface acoustic wave filter group chip and a multi-channel filter matching and tuning circuit.
声表面波滤波器集成封装结构，包括单片集成声表面波滤波器组芯片12、与声表面波滤波器芯片电气连接的多信道滤波器匹配调谐电路22以及封装外壳。封装外壳由封装底座4、封装底座的外引脚41、封帽5构成，封帽覆盖在封装底座上。The surface acoustic wave filter integrated packaging structure includes a monolithic integrated surface acoustic wave filter group chip 12, a multi-channel filter matching and tuning circuit 22 electrically connected to the surface acoustic wave filter chip, and a packaging shell. The packaging shell is composed of a packaging base 4, outer pins 41 of the packaging base, and a sealing cap 5, and the sealing cap covers the packaging base.
设有调谐基板2，其正面中部区域为芯片粘接区21，其正面周边区域设置多信道滤波器匹配调谐电路22，其背面设有大面积接地金属膜24，调谐基板2设置在封装外壳内，多信道滤波器匹配调谐电路22设置在调谐基板上。A tuning substrate 2 is provided, the middle area of the front is a chip bonding area 21, a multi-channel filter matching tuning circuit 22 is provided in the peripheral area of the front, a large-area grounded metal film 24 is provided on the back, and the tuning substrate 2 is arranged in the packaging shell , the multi-channel filter matching and tuning circuit 22 is arranged on the tuning substrate.
如图1所示，单片集成声表面波滤波器组芯片12粘接在调谐基板2中部芯片粘接区21，调谐基板2粘接在封装基座4上，最后覆以封帽5。As shown in FIG. 1 , the monolithic integrated surface acoustic wave filter group chip 12 is bonded to the chip bonding area 21 in the middle of the tuning substrate 2 , the tuning substrate 2 is bonded to the packaging base 4 , and finally covered with a sealing cap 5 .
如图2、图4所示，键合引线31依次连接芯片上各滤波器的信号电极101和对应的各匹配调谐电路信号电极201及各信道匹配调谐电路电极201和对应的封装底座各外引脚41，键合引线32连接芯片上各滤波器地电极102和和芯片粘接区地电极203，芯片粘接区地电极203和各匹配调谐电路地电极202通过过孔23与调谐基板背面接地金属膜24相连，调谐基板背面接地金属膜24通过导电银胶与封装底座4电气连接。As shown in Figure 2 and Figure 4, the bonding wires 31 are sequentially connected to the signal electrodes 101 of the filters on the chip and the corresponding matching tuning circuit signal electrodes 201, and the matching tuning circuit electrodes 201 of each channel and the corresponding external leads of the package base. The pin 41 and the bonding wire 32 are connected to the ground electrodes 102 of the filters on the chip and the ground electrodes 203 of the chip bonding area, and the ground electrodes 203 of the chip bonding area and the ground electrodes 202 of each matching tuning circuit are grounded to the back of the tuning substrate through the via hole 23 The metal film 24 is connected, and the ground metal film 24 on the back of the tuning substrate is electrically connected to the package base 4 through conductive silver glue.
本实施例中，声表面波滤波器芯片为制作在ST石英压电单晶基片上的单片集成4信道声表面波滤波器组，其中心频率分别为201.00MHz、201.25MHz、201.50MHz和201.75MHz，调谐基板的材料为双面敷铜的高频FR4环氧玻璃纤维基板，芯片粘接剂为BS-6600K型粘片红胶，基板粘接剂为A6/HA6型导电银胶，封装基座和封帽为带有10个外引脚的SF-10全铜封装套件。In this embodiment, the surface acoustic wave filter chip is a monolithically integrated 4-channel surface acoustic wave filter bank made on a ST quartz piezoelectric single crystal substrate, and its center frequencies are 201.00MHz, 201.25MHz, 201.50MHz and 201.75MHz respectively. MHz, the material of the tuning substrate is double-sided copper-coated high-frequency FR4 epoxy glass fiber substrate, the chip adhesive is BS-6600K type sticky red glue, the substrate adhesive is A6/HA6 type conductive silver glue, and the package base The base and cap are an SF-10 all-copper package kit with 10 external leads.
本实施例的实施步骤为：The implementation steps of this embodiment are:
（1）制作声表面波滤波器组芯片12和多信道滤波器调谐基板2；调谐基板为高频双面印制电路板，其正面中部区域为芯片粘接区21，其正面周边区域设置匹配调谐电路22，其背面设有大面积接地金属膜24；(1) Make the surface acoustic wave filter group chip 12 and the multi-channel filter tuning substrate 2; the tuning substrate is a high-frequency double-sided printed circuit board, the middle area of the front is the chip bonding area 21, and the peripheral area of the front is set to match The tuning circuit 22 has a large-area grounded metal film 24 on its back;
（2）用粘片红胶将声表面波滤波器组芯片12粘接在调谐基板2上；(2) Bond the surface acoustic wave filter group chip 12 to the tuning substrate 2 with adhesive red glue;
（3）采用超声压焊方法键合硅铝丝引线，用信号键合引线31连接声表面波滤波器芯片的信号电极101和匹配调谐电路的信号电极201；用接地键合引线32连接声表面波滤波器芯片的地电极102和芯片粘接区的地电极203；所述芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔23与接地金属膜24电气连接；(3) Use the ultrasonic pressure welding method to bond the silicon-aluminum wire leads, and use the signal bonding wire 31 to connect the signal electrode 101 of the SAW filter chip and the signal electrode 201 of the matching tuning circuit; use the ground bonding wire 32 to connect the SAW filter chip The ground electrode 102 of the wave filter chip and the ground electrode 203 of the chip bonding area; the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the ground metal film 24 through the via hole 23 on the tuning substrate ;
（4）用导电银胶将调谐基板2粘接在封装底座4上，并使得调谐基板上的接地金属膜24与封装底座4电气连接；(4) bonding the tuning substrate 2 to the package base 4 with conductive silver glue, and electrically connecting the ground metal film 24 on the tuning substrate to the package base 4;
（5）采用超声压焊方法键合硅铝丝引线，用信号键合引线连接匹配调谐电路的信号电极201和封装底座的外引脚41；(5) Using ultrasonic pressure welding to bond silicon-aluminum wire leads, and using signal bonding wires to connect the signal electrodes 201 of the matching tuning circuit and the outer pins 41 of the package base;
（6）采用电容储能焊接方法将封帽5覆盖在封装底座4上，最终完成声表面波滤波器集成封装。(6) The cap 5 is covered on the package base 4 by means of capacitor energy storage welding, and the integrated package of the surface acoustic wave filter is finally completed.
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