CN205945672U - Chip interconnection packaging structure of integrated surface acoustic wave filter subassembly - Google Patents
Chip interconnection packaging structure of integrated surface acoustic wave filter subassembly Download PDFInfo
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- CN205945672U CN205945672U CN201620794519.6U CN201620794519U CN205945672U CN 205945672 U CN205945672 U CN 205945672U CN 201620794519 U CN201620794519 U CN 201620794519U CN 205945672 U CN205945672 U CN 205945672U
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Abstract
Description
技术领域technical field
本实用新型涉及声表面波技术领域,尤其涉及一种集成声表面波滤波器组件芯片的内连封装结构。The utility model relates to the technical field of surface acoustic waves, in particular to an internal connection packaging structure of integrated surface acoustic wave filter component chips.
背景技术Background technique
声表面波器件由制作在压电基片上的多个叉指换能器组成,输入叉指换能器经逆压电效应将输入电信号转换成声信号,声信号沿基片表面传播,再由输出叉指换能器经压电效应将声信号转换成电信号输出,在两次转换中实现对信号的处理。The surface acoustic wave device is composed of multiple interdigital transducers fabricated on a piezoelectric substrate. The input interdigital transducer converts the input electrical signal into an acoustic signal through the inverse piezoelectric effect, and the acoustic signal propagates along the surface of the substrate, and then The output interdigital transducer converts the acoustic signal into an electrical signal output through the piezoelectric effect, and realizes signal processing in two conversions.
现有技术和应用中,声表面波滤波器组件各个滤波器芯片独立封装,封装内芯片内连方式主要为硅铝丝键合,即利用超声压焊的方法使硅铝丝分别与芯片电极和封装底座上的电极键合,与之相对应的外连和封装方法则为贴片式塑封或插脚式金属封装。由此带来的不足之处是射频内连及外连长而复杂,不利于声表面波器件的集成化,且射频损耗较大,抗干扰性能差。而为了便于声表面波滤波器组件的集成化、小型化,要求实现芯片的在板内连和封装。In the existing technology and application, each filter chip of the surface acoustic wave filter component is packaged independently, and the internal connection method of the chip in the package is mainly silicon-aluminum wire bonding, that is, the silicon-aluminum wire is connected to the chip electrode and the chip electrode respectively by ultrasonic pressure welding. The electrode bonding on the package base, and the corresponding external connection and packaging method are patch-type plastic packaging or pin-type metal packaging. The resulting shortcomings are that the internal and external connections of radio frequency are long and complex, which is not conducive to the integration of surface acoustic wave devices, and the radio frequency loss is large, and the anti-interference performance is poor. In order to facilitate the integration and miniaturization of the surface acoustic wave filter components, it is required to realize the on-board connection and packaging of the chip.
实用新型内容Utility model content
本实用新型的目的在于克服现有技术中的不足,提供了一种射频损耗小、互连结构紧凑,专用于集成声表面波滤波器组件的芯片内连封装结构。The purpose of the utility model is to overcome the deficiencies in the prior art, and provide a chip interconnection packaging structure with small radio frequency loss and compact interconnection structure, which is specially used for integrating surface acoustic wave filter components.
本实用新型的目的是通过以下技术方案实现的,一种集成声表面波滤波器组件的芯片内连封装结构,包括:The purpose of this utility model is achieved through the following technical solutions, a chip interconnection packaging structure of an integrated surface acoustic wave filter assembly, including:
在单一压电基片上制作多个并置的叉指换能器对以及交替设置的信号电极和接地电极,构成集成声表面波滤波器组芯片;Fabricate multiple juxtaposed interdigital transducer pairs and alternately arranged signal electrodes and ground electrodes on a single piezoelectric substrate to form an integrated surface acoustic wave filter chip;
采用高频双面敷铜有机基板制作声表面波滤波器组件基板,组件基板正面制作芯片内连区,芯片内连区制作有与集成声表面波滤波器组芯片电极对应的内连电极,包括内连信号电极和内连接地电极,组件基板芯片内连区背面为金属膜接地面,芯片内连区的内连信号电极与组件电路信号线相连,芯片内连区的内连接地电极通过金属孔与背面金属膜接地面相连;The high-frequency double-sided copper-clad organic substrate is used to make the surface acoustic wave filter component substrate, and the chip interconnection area is made on the front of the component substrate. The chip interconnection area is made with interconnection electrodes corresponding to the chip electrodes of the integrated surface acoustic wave filter group, including The internal connection signal electrode and the internal connection ground electrode, the back of the chip internal connection area of the component substrate is a metal film ground plane, the internal connection signal electrode of the chip internal connection area is connected to the component circuit signal line, and the internal connection ground electrode of the chip internal connection area The hole is connected to the ground plane of the metal film on the back;
内连封装时,在组件基板芯片内连区的内连电极上放置焊料柱,芯片倒覆在焊料柱上并使芯片电极与芯片内连区对应的内连电极对准,加温使焊料柱与上下电极熔接;During interconnection packaging, place a solder column on the interconnection electrode in the chip interconnection area of the component substrate. The chip is turned over on the solder column and the chip electrode is aligned with the corresponding interconnection electrode in the chip interconnection area. Heat the solder column Welding with the upper and lower electrodes;
浇注吸声密封胶,使其覆盖集成声表面波滤波器组芯片,并封闭芯片与组件基板之间的空隙。The sound-absorbing sealant is poured to cover the chip of the integrated surface acoustic wave filter group and seal the gap between the chip and the component substrate.
与现有技术相比,本实用新型具有以下有益效果:Compared with the prior art, the utility model has the following beneficial effects:
本实用新型在声表面波滤波器组件基板上直接内连封装集成声表面波滤波器组芯片,采用焊料柱倒覆芯片方式进行芯片的内连,并采用吸声胶进行芯片的在板固定密封,同时起吸收芯片端面和底面声表面波反射波及体声波的作用,本实用新型互连结构紧凑、射频损耗低、抗干扰能力强,工艺简单,制作方便。The utility model directly interconnects and packages the integrated surface acoustic wave filter group chip on the substrate of the surface acoustic wave filter component, adopts the method of overturning the chip with solder column for internal connection of the chip, and uses sound-absorbing glue to fix and seal the chip on the board , at the same time play the role of absorbing surface acoustic wave reflection wave and bulk acoustic wave on the end surface and bottom surface of the chip. The utility model has the advantages of compact interconnection structure, low radio frequency loss, strong anti-interference ability, simple process and convenient manufacture.
附图说明Description of drawings
图1是本实用新型集成声表面波滤波器组芯片叉指换能器、芯片电极结构示意图;Fig. 1 is the utility model integrated surface acoustic wave filter group chip interdigital transducer, the schematic diagram of chip electrode structure;
图2是本实用新型组件基板顶面芯片内连区和组件电路区布局示意图;Fig. 2 is a schematic diagram of the layout of the chip interconnection area and the assembly circuit area on the top surface of the component substrate of the utility model;
图3是本实用新型组件基板芯片内连区电极结构示意图;Fig. 3 is a schematic diagram of the electrode structure of the interconnection area of the component substrate chip of the utility model;
图4是本实用新型沿图2中A-A方向的总体结构剖视图。Fig. 4 is a sectional view of the overall structure of the utility model along the direction A-A in Fig. 2 .
图中:组件基板1、集成4通道声表面波滤波器组芯片2、焊料柱3、吸声密封胶4、芯片内连区11、组件电路12、铜膜接地面13、内连信号电极111、内连接地电极112、金属孔113、叉指换能器对22、芯片信号电极23、芯片接地电极24。In the figure: component substrate 1, integrated 4-channel surface acoustic wave filter group chip 2, solder column 3, sound-absorbing sealant 4, chip interconnection area 11, component circuit 12, copper film ground plane 13, interconnection signal electrode 111 , the internal connection ground electrode 112 , the metal hole 113 , the IDT pair 22 , the chip signal electrode 23 , and the chip ground electrode 24 .
具体实施方式detailed description
以下结合附图和集成4通道声表面波滤波器组件的具体实施例对本实用新型作进一步详细的说明。The utility model will be further described in detail below in conjunction with the accompanying drawings and the specific embodiment of the integrated 4-channel surface acoustic wave filter assembly.
实施例:Example:
如图1、图2、图3和图4所示集成4通道声表面波滤波器组件的芯片内连封装结构,包括组件基板1、集成4通道声表面波滤波器组芯片2、焊料柱3、吸声密封胶4;As shown in Figure 1, Figure 2, Figure 3 and Figure 4, the chip interconnection package structure of the integrated 4-channel surface acoustic wave filter component includes the component substrate 1, the integrated 4-channel surface acoustic wave filter chip 2, and the solder column 3 , sound-absorbing sealant 4;
在压电基片21上制作4个并置的叉指换能器对22、4对交替设置的芯片信号电极23和芯片接地电极24,构成集成声表面波滤波器组芯片2,压电基片材料为石英单晶或铌酸锂单晶或钽酸锂单晶;On the piezoelectric substrate 21, 4 juxtaposed interdigital transducer pairs 22, 4 pairs of alternately arranged chip signal electrodes 23 and chip ground electrodes 24 are formed to form an integrated surface acoustic wave filter group chip 2, and the piezoelectric substrate The sheet material is quartz single crystal or lithium niobate single crystal or lithium tantalate single crystal;
采用FR-4双面敷铜有机基板制作组件基板1,组件基板1正面包括组件电路12和芯片内连区11,芯片内连区11制作与集成4通道声表面波滤波器组芯片2对应的铜膜内连电极,包括8个内连信号电极111和8个内连接地电极112,组件基板芯片内连区11的背面制作铜膜接地面13,芯片内连区11的内连信号电极111与组件电路12的信号线对应相连,内连接地电极112通过金属孔113与芯片内连区11背面的铜膜接地面13相连;FR-4 double-sided copper-clad organic substrate is used to make component substrate 1, and the front side of component substrate 1 includes component circuit 12 and chip interconnection area 11, and the chip interconnection area 11 is made to correspond to integrated 4-channel surface acoustic wave filter group chip 2 Copper film interconnection electrodes, including 8 interconnection signal electrodes 111 and 8 interconnection ground electrodes 112, a copper film ground plane 13 is made on the back of the chip interconnection area 11 of the component substrate, and the interconnection signal electrodes 111 of the chip interconnection area 11 Correspondingly connected to the signal line of the component circuit 12, the internal connection ground electrode 112 is connected to the copper film ground plane 13 on the back of the chip internal connection area 11 through the metal hole 113;
芯片内连封装时,在组件基板芯片内连区11的8个内连信号电极111和8个内连接地电极112上放置焊料柱3,集成4通道声表面波滤波器组芯片2倒覆在焊料柱3上,芯片的8个信号电极23、8个接地电极24分别与组件基板芯片内连区11上的对应的8个内连信号电极111和8个内连接地电极112上的焊料柱3对准贴合,加温使焊料柱3与上下电极熔接;When the chip is interconnected and packaged, solder columns 3 are placed on the 8 interconnected signal electrodes 111 and 8 interconnected ground electrodes 112 in the chip interconnected area 11 of the component substrate, and the integrated 4-channel surface acoustic wave filter group chip 2 is turned upside down. On the solder column 3, the 8 signal electrodes 23 and the 8 ground electrodes 24 of the chip are respectively connected to the solder columns on the corresponding 8 internal connection signal electrodes 111 and 8 internal connection ground electrodes 112 on the component substrate chip internal connection area 11 3 Alignment and bonding, heating to weld the solder column 3 with the upper and lower electrodes;
浇注吸声密封胶4,使其覆盖集成声表面波滤波器组芯片2,并封闭芯片2与组件基板1之间的空隙。The sound-absorbing sealant 4 is poured to cover the chip 2 of the integrated surface acoustic wave filter group, and the gap between the chip 2 and the component substrate 1 is closed.
熟知本领域的人士将理解,虽然这里为了便于解释已描述了具体实施例,但是可在不背离本实用新型精神和范围的情况下做出各种改变。因此,除了所附权利要求之外,不能用于限制本实用新型。Those skilled in the art will appreciate that, although specific embodiments have been described herein for purposes of explanation, various changes may be made without departing from the spirit and scope of the invention. Accordingly, nothing should be taken to limit the invention, except as by the appended claims.
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Cited By (4)
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CN110380703A (en) * | 2019-08-13 | 2019-10-25 | 中电科技德清华莹电子有限公司 | A kind of the full wafer wafer level packaging structure and technique of microelectronic device |
CN110535450A (en) * | 2019-08-29 | 2019-12-03 | 无锡嘉硕科技有限公司 | Surface acoustic wave filter ceramic package and method with special screen effect |
WO2020134666A1 (en) * | 2018-12-26 | 2020-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | Integrated method and integrated structure of control circuit and surface acoustic wave filter |
CN111525907A (en) * | 2020-04-30 | 2020-08-11 | 甬矽电子(宁波)股份有限公司 | Surface acoustic wave filter chip packaging structure and packaging method |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020134666A1 (en) * | 2018-12-26 | 2020-07-02 | 中芯集成电路(宁波)有限公司上海分公司 | Integrated method and integrated structure of control circuit and surface acoustic wave filter |
CN110380703A (en) * | 2019-08-13 | 2019-10-25 | 中电科技德清华莹电子有限公司 | A kind of the full wafer wafer level packaging structure and technique of microelectronic device |
CN110535450A (en) * | 2019-08-29 | 2019-12-03 | 无锡嘉硕科技有限公司 | Surface acoustic wave filter ceramic package and method with special screen effect |
CN111525907A (en) * | 2020-04-30 | 2020-08-11 | 甬矽电子(宁波)股份有限公司 | Surface acoustic wave filter chip packaging structure and packaging method |
CN111525907B (en) * | 2020-04-30 | 2024-05-28 | 甬矽电子(宁波)股份有限公司 | Packaging structure and packaging method of surface acoustic wave filter chip |
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