CN203482165U - SAW Filter Integrated Package Structure - Google Patents
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- CN203482165U CN203482165U CN201320540165.9U CN201320540165U CN203482165U CN 203482165 U CN203482165 U CN 203482165U CN 201320540165 U CN201320540165 U CN 201320540165U CN 203482165 U CN203482165 U CN 203482165U
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- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000004806 packaging method and process Methods 0.000 claims abstract description 45
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
技术领域 technical field
本实用新型涉及一种电子封装结构,尤其是一种声表面波滤波器集成封装结构,属于声表面波技术领域。 The utility model relates to an electronic package structure, in particular to an integrated package structure of a surface acoustic wave filter, belonging to the technical field of surface acoustic waves.
背景技术 Background technique
声表面波滤波器在接入应用电路时,常常需要在其与前后级电路之间设置调谐电路,以实现器件与其前后级电路之间电学参数的匹配,从而发挥声表面波滤波器的最佳性能。现有技术中的声表面波滤波器一般采用独立封装方法,即每个滤波器芯片单独置于一个封装外壳中,而匹配调谐电路设置在器件封装之外,由此带来的不足之处是声表面波滤波器和外匹配调谐电路之间的互连线结构较为复杂,损耗较大,抗干扰能力差,进而对声表面波滤波器应用系统的总体性能产生明显不利影响。 When the surface acoustic wave filter is connected to the application circuit, it is often necessary to set a tuning circuit between it and the front and rear circuits to achieve the matching of the electrical parameters between the device and the front and rear circuits, so as to exert the best performance of the surface acoustic wave filter. performance. The surface acoustic wave filter in the prior art generally adopts an independent packaging method, that is, each filter chip is placed in a package shell separately, and the matching tuning circuit is arranged outside the device package. The disadvantages brought about by this are The structure of the interconnection between the SAW filter and the external matching tuning circuit is relatively complex, the loss is large, and the anti-interference ability is poor, which will have a significant adverse effect on the overall performance of the SAW filter application system.
实用新型内容 Utility model content
本实用新型的目的是针对上述现有技术的不足,克服现有技术中声表面波滤波器芯片和匹配调谐电路分置于封装体内外,互连线结构复杂,损耗大,抗干扰能力差,进而对声表面波滤波器应用系统的总体性能产生明显不利影响的缺点,从而提供一种声表面波滤波器集成封装结构。 The purpose of this utility model is to solve the above-mentioned deficiencies in the prior art, to overcome the prior art in which the surface acoustic wave filter chip and the matching tuning circuit are placed separately inside and outside the package, the interconnection wire structure is complicated, the loss is large, and the anti-interference ability is poor. Furthermore, the shortcomings that have an obvious adverse effect on the overall performance of the surface acoustic wave filter application system provide an integrated packaging structure for the surface acoustic wave filter.
本实用新型的目的是通过以下技术方案实现的:声表面波滤波器集成封装结构,包括声表面波滤波器芯片、与声表面波滤波器芯片电气连接的匹配调谐电路以及封装外壳,封装外壳由封装底座、封装底座的外引脚、封帽构成,封帽覆盖在封装底座上,其特征是,设有调谐基板,调谐基板设置在所述封装外壳内,所述匹配调谐电路制作在调谐基板上;所述声表面波滤波器芯片粘接在调谐基板上,并通过键合引线与匹配调谐电路电气连接;所述调谐基板粘接在封装底座上,并通过键合引线与封装底座的外引脚电气连接。 The purpose of this utility model is achieved through the following technical solutions: the integrated packaging structure of the surface acoustic wave filter, including the surface acoustic wave filter chip, the matching and tuning circuit electrically connected with the surface acoustic wave filter chip and the package shell, the package shell consists of The packaging base, the outer pins of the packaging base, and the sealing cap are formed. The sealing cap is covered on the packaging base. It is characterized in that a tuning substrate is provided, and the tuning substrate is arranged in the packaging shell. The matching tuning circuit is made on the tuning substrate. above; the surface acoustic wave filter chip is bonded on the tuning substrate, and is electrically connected with the matching tuning circuit through the bonding wire; Pins are electrically connected.
所述调谐基板为高频双面印制电路板,其正面中部区域为芯片粘接区,其正面周边区域设置匹配调谐电路,其背面设有大面积接地金属膜;所述声表面波滤波器芯片粘接在芯片粘接区,所述芯片粘接区的地电极和匹配调谐电路的地电极分别通过调谐基板上的过孔与接地金属膜电气连接,接地金属膜通过导电银胶与封装底座电气连接。 The tuning substrate is a high-frequency double-sided printed circuit board, the middle area of the front is a chip bonding area, a matching tuning circuit is arranged in the peripheral area of the front, and a large-area grounded metal film is arranged on the back; the surface acoustic wave filter The chip is bonded in the chip bonding area, and the ground electrode of the chip bonding area and the ground electrode of the matching tuning circuit are respectively electrically connected to the ground metal film through the via holes on the tuning substrate, and the ground metal film is connected to the package base through conductive silver glue Electrical connections.
所述键合引线包括信号键合引线、接地键合引线,信号键合引线依次连接声表面波滤波器芯片的信号电极和匹配调谐电路的信号电极以及匹配调谐电路的信号电极和封装底座的外引脚;所述接地键合引线连接声表面波滤波器芯片的地电极和芯片粘接区的地电极。 The bonding wires include signal bonding wires and grounding bonding wires, and the signal bonding wires are sequentially connected to the signal electrodes of the surface acoustic wave filter chip and the signal electrodes of the matching tuning circuit and the signal electrodes of the matching tuning circuit and the outer surface of the package base. pin; the ground bonding wire connects the ground electrode of the surface acoustic wave filter chip and the ground electrode of the chip bonding area.
本实用新型将声表面波滤波器芯片和匹配调谐电路集成封装在同一封装体内,简化了声表面波滤波器芯片、匹配调谐电路和应用电路之间的互连结构,具有结构紧凑,损耗小,抗干扰能力强等优点,有助于改善声表面波滤波器应用系统的总体性能,所涉及集成封装结构的制作方法与常规声表面波滤波器及其应用电路的加工工艺兼容,易于同步实现。 The utility model integrates the surface acoustic wave filter chip and the matching tuning circuit into the same packaging body, simplifies the interconnection structure between the surface acoustic wave filter chip, the matching tuning circuit and the application circuit, has compact structure, small loss, The advantages of strong anti-interference ability are helpful to improve the overall performance of the surface acoustic wave filter application system. The manufacturing method of the integrated packaging structure involved is compatible with the processing technology of conventional surface acoustic wave filters and their application circuits, and is easy to realize synchronously.
附图说明 Description of drawings
图1是本实用新型的总体结构示意图; Fig. 1 is the overall structural representation of the utility model;
图2是图1中调谐基板的结构示意图; Fig. 2 is a schematic structural diagram of the tuning substrate in Fig. 1;
图3是本实用新型用于封装单声表面波滤波器芯片的结构示意图; Fig. 3 is a schematic structural view of the utility model for packaging a single surface acoustic wave filter chip;
图4是本实用新型用于封装单片集成声表面波滤波器组芯片的结构示意图; Fig. 4 is a structural schematic diagram of the utility model for packaging a monolithic integrated surface acoustic wave filter group chip;
图中:1声表面波滤波器芯片、11单声表面波滤波器芯片、12单片集成声表面波滤波器组芯片、101芯片信号电极、102芯片地电极、2调谐基板、21芯片粘接区、22匹配调谐电路、23过孔、24接地金属膜、201匹配调谐电路信号电极、202匹配调谐电路地电极、203芯片粘接区地电极、3键合引线、31信号键合引线、32接地键合引线、4封装底座、41封装底座的外引脚、5封帽。 In the figure: 1 surface acoustic wave filter chip, 11 single surface acoustic wave filter chip, 12 monolithic integrated surface acoustic wave filter group chip, 101 chip signal electrode, 102 chip ground electrode, 2 tuning substrate, 21 chip bonding area, 22 matching tuning circuit, 23 via hole, 24 grounding metal film, 201 matching tuning circuit signal electrode, 202 matching tuning circuit ground electrode, 203 chip bonding area ground electrode, 3 bonding wire, 31 signal bonding wire, 32 Ground Bond Lead, 4 Package Base, 41 Outer Pins of Package Base, 5 Caps.
具体实施方式 Detailed ways
下面结合附图和具体实施例对本实用新型作进一步说明: Below in conjunction with accompanying drawing and specific embodiment the utility model is further described:
实施例1 Example 1
声表面波滤波器集成封装结构,包括声表面波滤波器芯片1、与声表面波滤波器芯片电气连接的匹配调谐电路22以及封装外壳,封装外壳由封装底座4、封装底座的外引脚41、封帽5构成,封帽覆盖在封装底座上。
The surface acoustic wave filter integrated packaging structure includes a surface acoustic
设有调谐基板2,调谐基板设置在所述封装外壳内,调谐基板为高频双面印制电路板,其正面中部区域为芯片粘接区21,其正面周边区域设置匹配调谐电路22,其背面设有大面积接地金属膜24。
A
匹配调谐电路22制作在调谐基板上,声表面波滤波器芯片粘接在芯片粘接区。键合引线包括信号键合引线31、接地键合引线32,信号键合引线依次连接声表面波滤波器芯片的信号电极101和匹配调谐电路的信号电极201以及匹配调谐电路的信号电极201和封装底座的外引脚41。
The matching
接地键合引线连接声表面波滤波器芯片的地电极102和芯片粘接区的地电极203。芯片粘接区的地电极203和匹配调谐电路的地电极202分别通过调谐基板上的过孔23与接地金属膜24电气连接,接地金属膜通过导电银胶与封装底座4电气连接。
The ground bonding wire connects the
实施例2 Example 2
本实施例为单声表面波滤波器芯片与单信道滤波器匹配调谐电路的集成封装。 This embodiment is an integrated package of a single surface acoustic wave filter chip and a matching tuning circuit for a single channel filter.
声表面波滤波器集成封装结构,包括单声表面波滤波器芯片11、与单声表面波滤波器芯片电气连接的单信道滤波器匹配调谐电路22以及封装外壳。封装外壳由封装底座4、封装底座的外引脚41、封帽5构成,封帽覆盖在封装底座上。
The surface acoustic wave filter integrated packaging structure includes a single surface acoustic
设有调谐基板2,其正面中部区域为芯片粘接区21,其正面周边区域设置单信道滤波器匹配调谐电路22,其背面设有大面积接地金属膜24,调谐基板2设置在封装外壳内,单信道滤波器匹配调谐电路22设置在调谐基板上。
A
单声表面波滤波器芯片11粘接在调谐基板2中部芯片粘接区21,调谐基板2粘接在封装基座4上,覆以封帽5。
The mono surface
如图2、图3所示,键合引线31依次连接芯片信号电极101和匹配调谐电路信号电极201及匹配调谐电路信号电极201和封装底座4的外引脚41,键合引线32连接芯片地电极102和芯片粘接区地电极203;芯片粘接区地电极203和匹配调谐电路地电极202通过过孔23与调谐基板背面接地金属膜24相连,调谐基板背面接地金属膜24通过导电银胶与封装底座4电气连接。
As shown in Fig. 2 and Fig. 3, the
本实施例中,声表面波滤波器芯片为制作在128°Y-X铌酸锂压电单晶基片上的144.45MHz声表面波滤波器,调谐基板的材料为双面敷铜的高频FR4环氧玻璃纤维基板,芯片粘接剂为BS-6600K型粘片红胶,基板粘接剂为A6/HA6型导电银胶,封装基座和封帽为带有4个外引脚的SF-4全铜封装套件。 In this embodiment, the surface acoustic wave filter chip is a 144.45MHz surface acoustic wave filter made on a 128°Y-X lithium niobate piezoelectric single crystal substrate, and the material of the tuning substrate is high-frequency FR4 epoxy coated with copper on both sides. Glass fiber substrate, chip adhesive is BS-6600K type sticky red adhesive, substrate adhesive is A6/HA6 type conductive silver adhesive, package base and sealing cap are SF-4 full Copper Package Kit.
实施例3 Example 3
本实施例为单片集成声表面波滤波器组芯片与多信道滤波器匹配调谐电路的集成封装。 This embodiment is an integrated packaging of a monolithic surface acoustic wave filter group chip and a multi-channel filter matching and tuning circuit.
声表面波滤波器集成封装结构,包括单片集成声表面波滤波器组芯片12、与声表面波滤波器芯片电气连接的多信道滤波器匹配调谐电路22以及封装外壳。封装外壳由封装底座4、封装底座的外引脚41、封帽5构成,封帽覆盖在封装底座上。
The surface acoustic wave filter integrated packaging structure includes a monolithic integrated surface acoustic wave
设有调谐基板2,其正面中部区域为芯片粘接区21,其正面周边区域设置多信道滤波器匹配调谐电路22,其背面设有大面积接地金属膜24,调谐基板2设置在封装外壳内,多信道滤波器匹配调谐电路22设置在调谐基板上。
A
如图1所示,单片集成声表面波滤波器组芯片12粘接在调谐基板2中部芯片粘接区21,调谐基板2粘接在封装基座4上,最后覆以封帽5。
As shown in FIG. 1 , the monolithic integrated surface acoustic wave
如图2、图4所示,键合引线31依次连接芯片上各滤波器的信号电极101和对应的各匹配调谐电路信号电极201及各信道匹配调谐电路电极201和对应的封装底座各外引脚41,键合引线32连接芯片上各滤波器地电极102和和芯片粘接区地电极203,芯片粘接区地电极203和各匹配调谐电路地电极202通过过孔23与调谐基板背面接地金属膜24相连,调谐基板背面接地金属膜24通过导电银胶与封装底座4电气连接。
As shown in Figure 2 and Figure 4, the
本实施例中,声表面波滤波器芯片为制作在ST石英压电单晶基片上的单片集成4信道声表面波滤波器组,其中心频率分别为201.00MHz、201.25MHz、201.50MHz和201.75MHz,调谐基板的材料为双面敷铜的高频FR4环氧玻璃纤维基板,芯片粘接剂为BS-6600K型粘片红胶,基板粘接剂为A6/HA6型导电银胶,封装基座和封帽为带有10个外引脚的SF-10全铜封装套件。 In this embodiment, the surface acoustic wave filter chip is a monolithically integrated 4-channel surface acoustic wave filter bank made on a ST quartz piezoelectric single crystal substrate, and its center frequencies are 201.00MHz, 201.25MHz, 201.50MHz and 201.75MHz respectively. MHz, the material of the tuning substrate is double-sided copper-coated high-frequency FR4 epoxy glass fiber substrate, the chip adhesive is BS-6600K type sticky red glue, the substrate adhesive is A6/HA6 type conductive silver glue, and the package base The base and cap are an SF-10 all-copper package kit with 10 external leads.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103441746A (en) * | 2013-09-02 | 2013-12-11 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter and packaging method thereof |
CN104184431A (en) * | 2014-09-10 | 2014-12-03 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技(无锡)有限公司 | Packaging structure with bulk acoustic wave filter chip |
CN109060226A (en) * | 2018-07-05 | 2018-12-21 | 新疆石油管理局有限公司数据公司 | A kind of encapsulating structure and packaging method of pressure-sensing device |
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2013
- 2013-09-02 CN CN201320540165.9U patent/CN203482165U/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103441746A (en) * | 2013-09-02 | 2013-12-11 | 扬州大学 | Integrated packaging structure of surface acoustic wave filter and packaging method thereof |
CN103441746B (en) * | 2013-09-02 | 2017-03-15 | 扬州大学 | SAW filter integrated encapsulation structure and its method for packing |
CN104184431A (en) * | 2014-09-10 | 2014-12-03 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
CN104184431B (en) * | 2014-09-10 | 2017-02-15 | 中国电子科技集团公司第二十六研究所 | High-frequency ceramic surface mounting transverse surface acoustic wave resonance filter |
CN105897215A (en) * | 2016-05-20 | 2016-08-24 | 爱普科斯科技(无锡)有限公司 | Packaging structure with bulk acoustic wave filter chip |
CN105897215B (en) * | 2016-05-20 | 2018-08-28 | 全讯射频科技(无锡)有限公司 | A kind of encapsulating structure of bulk accoustic wave filter chip |
CN109060226A (en) * | 2018-07-05 | 2018-12-21 | 新疆石油管理局有限公司数据公司 | A kind of encapsulating structure and packaging method of pressure-sensing device |
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