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CN102339945A - High-power light-emitting diode with diamond powder-copper powder composite material as heat dissipation substrate - Google Patents

High-power light-emitting diode with diamond powder-copper powder composite material as heat dissipation substrate Download PDF

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CN102339945A
CN102339945A CN2011103349260A CN201110334926A CN102339945A CN 102339945 A CN102339945 A CN 102339945A CN 2011103349260 A CN2011103349260 A CN 2011103349260A CN 201110334926 A CN201110334926 A CN 201110334926A CN 102339945 A CN102339945 A CN 102339945A
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heat dissipation
dissipation substrate
composite material
copper powder
diamond powder
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CN102339945B (en
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姚光锐
范广涵
郑树文
张涛
周德涛
赵芳
宋晶晶
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South China Normal University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

The invention discloses a high-power light-emitting diode (LED) with a cooling substrate made of a diamond powder-copper powder composite, and the LED provided by the invention comprises an LED chip, a lens and the cooling substrate made of the diamond powder-copper powder composite, wherein the lower surface of the cooling substrate is directly contacted with the air, the upper surface of the cooling substrate is provided with a concave pit, and the LED chip is directly placed at the bottom of the concave pit on the upper surface of the cooling substrate by using a solid crystal adhesive or through metal eutectic soldering; the inside of the concave pit is filled with an insulating elastic transparent substance, and the insulating elastic transparent substance covers the whole LED chip and leading wires thereof; and the lens covers the concave pit. The composite can extract heat from the high-power LED according to the shortest path and directly discharge heat to the air. Because the thermal conductivity of the composite is large, through combining with an optimized structure design, the composite can be used for cooling a single high-power LED and an LED module, thereby achieving the purpose of enhancing the light output power and prolonging the service life of the LED.

Description

散热基板为金刚石粉-铜粉复合材料的大功率发光二极管High-power light-emitting diode with diamond powder-copper powder composite material as heat dissipation substrate

技术领域 technical field

本发明涉及LED发明技术领域,特别地,涉及一种直接采用金刚石粉-铜粉复合材料作为散热基板的大功率LED。 The invention relates to the technical field of LED inventions, in particular to a high-power LED that directly uses a diamond powder-copper powder composite material as a heat dissipation substrate.

背景技术 Background technique

过去LED只能拿来做为状态指示灯的时代,其封装散热从来就不是问题,但近年来LED的亮度、功率皆积极提升,并开始用于背光与电子发明等应用后,LED的封装散热问题已出现。在相同的单颗封装内送入倍增的电流,发热自然也会倍增,如此散热情况当然会恶化。例如,由于要将白光LED拿来做照相手机的闪光灯、要拿来做小型发明用灯泡、要拿来做投影机内的发明灯泡,如此只是高亮度是不够的,还要用上高功率,这时散热就成了问题。更有甚者,在液晶电视的背光上,既是使用高亮度LED,也要密集排列,且为了讲究短小轻薄,使背部可用的散热设计空间更加拘限,且若高标要求来看也不应使用散热风扇,因为风扇的吵杂声会影响电视观赏的品味情绪。倘若不解决散热问题,而让LED的热无法排解,进而使LED的工作温度上升,如此会有什么影响吗?关于此最主要的影响有二:(1)发光亮度减弱、(2)使用寿命衰减。现有的大功率LED芯片封装材料多是铝基板和共烧陶瓷基板,这是不能满足散热需求的,另外现有的封装结构还需要作出很多改进。 In the past when LEDs could only be used as status indicator lights, heat dissipation in their packaging was never a problem. However, in recent years, the brightness and power of LEDs have been actively improved, and they have begun to be used in applications such as backlighting and electronic inventions. The problem has arisen. If the doubled current is fed into the same single package, the heat generation will naturally be doubled, so the heat dissipation will of course worsen. For example, because white LEDs are to be used as flashlights for camera phones, light bulbs for small inventions, and light bulbs for inventions in projectors, high brightness is not enough, and high power is also required. This is where heat dissipation becomes a problem. What's more, in the backlight of LCD TVs, high-brightness LEDs are used, and they must be arranged densely. In order to pay attention to shortness and thinness, the available heat dissipation design space on the back is more restricted, and it should not be used if high standards are required. Use a cooling fan, because the noise of the fan will affect the taste of watching TV. If the heat dissipation problem is not solved, the heat of the LED cannot be dissipated, and the operating temperature of the LED will rise. Will it have any impact? There are two main effects on this: (1) weakening of luminous brightness, and (2) attenuation of service life. Most of the existing high-power LED chip packaging materials are aluminum substrates and co-fired ceramic substrates, which cannot meet the heat dissipation requirements. In addition, the existing packaging structures still need to be improved a lot.

发明内容 Contents of the invention

本发明所要解决的技术问题是克服现有LED芯片的散热问题,提供金刚石粉-铜粉复合材料做散热基板的大功率发光二极管。本发明主要通过如下技术方案来实现。 The technical problem to be solved by the invention is to overcome the heat dissipation problem of the existing LED chips, and provide a high-power light-emitting diode with a diamond powder-copper powder composite material as a heat dissipation substrate. The present invention is mainly realized through the following technical solutions.

散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,包括LED芯片、透镜和金刚石粉-铜粉复合材料制成的散热基板;所述散热基板的下表面直接和空气接触,上表面设有凹坑,LED芯片通过固晶胶或金属共晶焊直接安置在散热基板上表面的所述凹坑底部;所述凹坑中填充有绝缘弹性透明物质,绝缘弹性透明物质覆盖整个LED芯片及其引线,透镜盖在凹坑上。  The heat dissipation substrate is a high-power light-emitting diode made of diamond powder-copper powder composite material, including LED chips, lenses and a heat dissipation substrate made of diamond powder-copper powder composite material; the lower surface of the heat dissipation substrate is directly in contact with the air, and the upper surface is set There are pits, and the LED chip is directly placed on the bottom of the pit on the upper surface of the heat dissipation substrate through crystal-bonding glue or metal eutectic welding; the pit is filled with an insulating elastic transparent substance, and the insulating elastic transparent substance covers the entire LED chip and Its lead wire, the lens cap is on the dimple. the

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,散热基板下表面设有电极,所述凹坑开有贯穿至散热基板下表面的穿孔,LED芯片的引线通过穿孔与散热基板下表面的电极连接。 As a further optimized technical solution for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, the lower surface of the heat dissipation substrate is provided with electrodes, and the pits are provided with perforations that penetrate to the lower surface of the heat dissipation substrate. The leads are connected to the electrodes on the lower surface of the heat dissipation substrate through the through holes.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述散热基板除所述凹坑外的上表面设有电路层,电路层通过粘合层粘在散热基板上表面,LED芯片的引线与电路层上的电极连接。 As a further optimized technical scheme for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, a circuit layer is provided on the upper surface of the heat dissipation substrate except the pit, and the circuit layer is adhered to the surface through an adhesive layer. On the upper surface of the heat dissipation substrate, the leads of the LED chip are connected to the electrodes on the circuit layer.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述散热基板的下表面加工成散热鳍片。 As a technical solution for further optimization of the high-power light-emitting diode in which the heat dissipation substrate is a diamond powder-copper powder composite material, the lower surface of the heat dissipation substrate is processed into heat dissipation fins.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述透镜覆盖LED芯片及其引线。 As a further optimized technical solution for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, the lens covers the LED chip and its leads.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述绝缘弹性透明物质为硅胶。 As a technical solution for further optimization of the above-mentioned high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material, the insulating elastic transparent substance is silica gel.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述绝缘弹性透明物质中掺有荧光粉。 As a further optimized technical solution for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, phosphor powder is doped in the insulating elastic transparent substance.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述凹坑中安置有多个LED芯片。 As a technical solution for further optimization of the high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material, a plurality of LED chips are placed in the pit.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述金刚石粉-铜粉复合材料由如下方法制备:把超高导热的金刚石200~300目粉颗粒和高导热的铜粉300~400目颗粒按混合,其中金刚石的体积比是40%~60%,利用磁控溅射的方法在混合颗粒表面镀覆质量比为0.1%~0.3%的过渡族金属,所述过渡族金属包括铬、钛或钼;把处理后的混合物放入模具中,然后置于等离子体真空高压烧结炉中烧结,升温时间10~15min,温度达到1000~1050℃,压强20~40MPa,烧结时间10~15min ;烧结后的复合材料,再做氩气氛围下的热等静压,压强为150~200MPa,温度1000~1040℃,保温3~4h,得所述金刚石粉-铜粉复合材料。 As a further optimized technical solution for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, the diamond powder-copper powder composite material is prepared by the following method: superhigh thermal conductivity diamond powder particles of 200 to 300 mesh Mix with high thermal conductivity copper powder 300~400 mesh particles, in which the volume ratio of diamond is 40%~60%, use the method of magnetron sputtering to coat the transition group with a mass ratio of 0.1%~0.3% on the surface of the mixed particles Metal, the transition group metal includes chromium, titanium or molybdenum; put the processed mixture into a mold, and then sinter it in a plasma vacuum high-pressure sintering furnace. 20~40MPa, sintering time 10~15min; the composite material after sintering is subjected to hot isostatic pressing under argon atmosphere, the pressure is 150~200MPa, the temperature is 1000~1040°C, and the heat preservation is 3~4h to obtain the diamond powder -Copper powder composite.

作为上述的散热基板为金刚石粉-铜粉复合材料的大功率发光二极管进一步优化的技术方案,所述超高导热的金刚石热导率为2000 W/m.K,所述高导热的铜粉热导率为400 W/m.K。 As a further optimized technical solution for high-power light-emitting diodes in which the heat dissipation substrate is a diamond powder-copper powder composite material, the thermal conductivity of the ultra-high thermal conductivity diamond is 2000 W/m.K, and the thermal conductivity of the high thermal conductivity copper powder is 2000 W/m.K. It is 400 W/m.K.

本发明的散热基板是金刚石粉和铜粉经过高压烧结制成,可以做出不同的尺寸和外形,增大散热基板与空气的接触面积,形成对流散热,增强散热效果。电路层和粘合层没有覆盖整个散热基板表面,在LED芯片下方及附近裸露出散热基板,LED芯片过(固晶胶)银胶或金属共晶焊与散热基板直接相连。LED芯片的热量直接通过散热基板向空气辐射,这样传热路径就很短,传热效率大大提高。而且结合散热基板的本身优良的热学特性,将极大地抑制LED芯片结温的上升。LED芯片被反射杯包围,反射杯把侧向光线反射出去,反射杯由高热导物质构成,比如金刚石分-铜粉复合材料做成,这样就有一个横向的散热效果。反射杯上方盖上透镜,透镜的结构对应光的出射角度。 The heat dissipation substrate of the present invention is made of diamond powder and copper powder through high-pressure sintering, which can be made into different sizes and shapes, increases the contact area between the heat dissipation substrate and air, forms convective heat dissipation, and enhances heat dissipation effect. The circuit layer and the adhesive layer do not cover the entire surface of the heat dissipation substrate, and the heat dissipation substrate is exposed under and near the LED chip, and the LED chip is directly connected to the heat dissipation substrate through silver glue or metal eutectic welding. The heat of the LED chip is directly radiated to the air through the heat dissipation substrate, so that the heat transfer path is very short and the heat transfer efficiency is greatly improved. Moreover, combined with the excellent thermal properties of the heat dissipation substrate itself, the rise of the junction temperature of the LED chip will be greatly suppressed. The LED chip is surrounded by a reflective cup, which reflects the lateral light. The reflective cup is made of high thermal conductivity material, such as diamond-copper powder composite material, so that there is a horizontal heat dissipation effect. A lens is covered above the reflecting cup, and the structure of the lens corresponds to the outgoing angle of the light.

与现有技术相比,本发明具有如下优点和技术效果: Compared with the prior art, the present invention has the following advantages and technical effects:

1)本发明使用金刚石粉和铜粉复合材料作为LED芯片的散热基板,而且,在基板上同时加工出鳍片和凹坑。 1) The present invention uses a diamond powder and copper powder composite material as the heat dissipation substrate of the LED chip, and processes fins and pits on the substrate at the same time.

2)本发明中,在金刚石粉和铜粉复合材料穿孔,把电极做到散热基板的底端,散热基板上表面进行设计出凹坑,LED芯片安放在凹坑内,凹坑有反射杯功能。而且,LED芯片可以倒装封装。 2) In the present invention, the composite material of diamond powder and copper powder is perforated, and the electrode is placed at the bottom of the heat dissipation substrate, and a pit is designed on the upper surface of the heat dissipation substrate. The LED chip is placed in the pit, and the pit has the function of a reflective cup. Moreover, LED chips can be flip-chip packaged.

3)本发明的LED芯片直接粘合在金刚石粉和铜粉复合材料上,两者之间没有小金属热沉块。并且,该散热基板不用安放在其它类型散热基板之上。 3) The LED chip of the present invention is directly bonded on the composite material of diamond powder and copper powder, and there is no small metal heat sink block between the two. Moreover, the heat dissipation substrate does not need to be placed on other types of heat dissipation substrates.

4)本发明进一步优化的技术方案中,通过特定参数下制得的金刚石粉-铜粉复合材料,具有较高的热导率,远远高出现有的铝,共烧陶瓷等材料的热导率。其次,金刚石粉和铜粉复合材料的表面,十分粗糙,增大这种复合材料与空气的接触面积,增强对流热辐射。再次,这种复合材料是有颗粒变成的块状结构,所以很容易制成各种需要的结构。这些特征都有利于用这种复合材料做LED照明装置的散热装置。这无疑得到散热效果很好的LED照明装置,一方面拓展了这种复合材料的应用领域,另一方面这种散热装置可以适用于不同的LED应用场合。 4) In the further optimized technical solution of the present invention, the diamond powder-copper powder composite material prepared under specific parameters has high thermal conductivity, which is far higher than that of existing aluminum, co-fired ceramics and other materials Rate. Secondly, the surface of the diamond powder and copper powder composite material is very rough, which increases the contact area between the composite material and air and enhances convective heat radiation. Again, this composite material is a block structure that has particles, so it is easy to make various required structures. These features are beneficial to using this composite material as a heat dissipation device for an LED lighting device. Undoubtedly, an LED lighting device with a good heat dissipation effect can be obtained. On the one hand, the application field of the composite material is expanded, and on the other hand, the heat dissipation device can be applied to different LED application occasions.

总之,本发明在使用金刚石粉和铜粉复合散热基板的基础上,改变LED芯片的封装结构,从导热路径和散热板向空气散热等角度提供优化设计方案,有效地解决大功率LED因为大量发热带来的亮度下降和寿命缩短的问题。以有效散热为主要目标,同时兼顾发光特性,可以为不同应用的LED发明提供帮助。 In short, on the basis of using a composite heat dissipation substrate of diamond powder and copper powder, the present invention changes the packaging structure of the LED chip, provides an optimized design scheme from the perspectives of heat conduction paths and heat dissipation plates to air heat dissipation, and effectively solves the problem of high-power LEDs due to a large number of power generation issues. Problems of brightness reduction and life shortening caused by heat. Taking effective heat dissipation as the main goal while taking into account the luminous characteristics can provide assistance for the invention of LEDs for different applications.

附图说明 Description of drawings

下面结合附图和实施例对本发明作进一步的详细描述。 The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

图1本发明第一实施例的剖面图。  Fig. 1 is a sectional view of a first embodiment of the present invention. the

图2a 本发明第二实施例的剖面图。 Figure 2a is a cross-sectional view of a second embodiment of the present invention.

图2b 本发明第二实施例的散热基板的剖面图。 Fig. 2b is a cross-sectional view of the heat dissipation substrate of the second embodiment of the present invention.

图3本发明第三实施例的剖面图。 Fig. 3 is a sectional view of a third embodiment of the present invention.

图4a 本发明第四实施例的剖面图。 Fig. 4a is a sectional view of a fourth embodiment of the present invention.

图4b 本发明第四实施例的仰视图。 Figure 4b is a bottom view of a fourth embodiment of the present invention.

本发明图注说明: Illustration of the present invention:

11散热基板;2粘合层;3电路层;4固晶胶;5引线;6LED芯片; 11 heat dissipation substrate; 2 adhesive layer; 3 circuit layer; 4 solid crystal glue; 5 lead wire; 6LED chip;

7透镜;8弹性透明物质;9下表面电极;111鳍片;112凹坑;113穿孔。 7 lens; 8 elastic transparent substance; 9 lower surface electrode; 111 fin; 112 pit; 113 perforation.

具体实施方式 Detailed ways

参阅图1至图4所示,本发明给出的采用金刚石粉-铜粉复合材料作为散热基板的大功率LED封装结构的较佳实施例,但本发明的实施方式和保护范围不限于此。 Referring to Figures 1 to 4, the present invention provides a preferred embodiment of a high-power LED packaging structure using a diamond powder-copper powder composite material as a heat dissipation substrate, but the implementation and protection scope of the present invention are not limited thereto.

如图1所示:金刚石粉和铜粉复合材料制成的散热基板11上表面在中心位置有凹坑112,LED芯片6通过固晶胶4直接放置在凹坑112的底面上,凹坑112相当反射杯,凹坑112表面有高反射物质,比如聚合物,金属银,铝等,把LED芯片6侧向的光发射出去。凹坑里填充弹性透明物质8,通常用硅胶,硅胶有很多优点,它折射率大;不会变黄;保持凝胶状。弹性透明物质8也可以和荧光物质混合,起到波长转换作用,比如把蓝光转换成黄光,最终合成白光。弹性透明物质8里面也可以加入光发散介质,改变出射光的光场分布。弹性透明物质上面盖上透镜7透镜的形状可以改变,根据不同的出光角度的要求。透镜7可以由弹性塑料、玻璃、树脂、亚克力等物质制成。散热基板上面有粘合层2和电路层3;粘合层2和电路层3中心都有孔,孔的位置和LED芯片6的位置对应。粘合层2是高热导绝缘物质,比如环氧树脂,或者填充了纳米碳纤维的粘胶。电路层3通过金线5把外界的电供给LED芯片6。 As shown in Figure 1: the upper surface of the heat dissipation substrate 11 made of diamond powder and copper powder composite material has a pit 112 in the center, and the LED chip 6 is directly placed on the bottom surface of the pit 112 through the crystal bonding glue 4, and the pit 112 Corresponding to a reflective cup, the surface of the pit 112 has a highly reflective material, such as polymer, metal silver, aluminum, etc., to emit the light from the side of the LED chip 6 . Fill elastic transparent material 8 in the pit, usually use silica gel, silica gel has many advantages, and its refractive index is big; Can not turn yellow; Keep gel. The elastic transparent substance 8 can also be mixed with fluorescent substances to play a role in wavelength conversion, such as converting blue light into yellow light, and finally synthesize white light. A light-diverging medium may also be added to the elastic transparent material 8 to change the light field distribution of the outgoing light. The elastic transparent material is covered with lens 7. The shape of the lens can be changed according to the requirements of different light exit angles. The lens 7 can be made of elastic plastic, glass, resin, acrylic and other materials. There is an adhesive layer 2 and a circuit layer 3 on the heat dissipation substrate; both the adhesive layer 2 and the circuit layer 3 have holes in the center, and the positions of the holes correspond to the positions of the LED chips 6 . The adhesive layer 2 is a highly thermally conductive insulating substance, such as epoxy resin, or glue filled with carbon nanofibers. The circuit layer 3 supplies external electricity to the LED chip 6 through the gold wire 5 .

金刚石是热导率最高的物质,它利用声子传热,热导率可达2000W/m.K;金刚石的线热膨胀系数可低至1.2ppm/K。铜的热导率在金属中都是名列前茅的,其值为397W/m.K,热膨胀系数18ppm/K。利用铜材料延展性把铜填充在金刚石颗粒空隙中制成的复合散热基板热导率可达800W/m.K,热膨胀系数5ppm/K左右。这种材料最适合制作高功率半导体芯片的衬底及导热材料,例如本发明中的LED的芯片的散热基板。除了高热导率,金刚石-铜复合片的热膨胀系数可以调整到接近半导体芯片的热膨胀系数,避免热应力对半导体芯片的破坏。从散热基板向空气散热的角度来看,散热基板与空气的接触面积以及对流散热方式都极其重要,而金刚石粉和铜粉复合散热基板的表面,不经额外加工,就已经十分粗糙,这对导热效率非常有益;从结构的角度来看,金刚石粉和铜粉复合散热基板容易塑形,因为从颗粒制成块状,最终的散热基板的外形依模具的形状而改变,而不像金属基板需要打孔、切割等复杂工序。这个优势使得金刚石粉和铜粉复合散热基板与LED芯片更加有效地耦合。  Diamond is the material with the highest thermal conductivity. It uses phonons to transfer heat, and its thermal conductivity can reach 2000W/m.K; the linear thermal expansion coefficient of diamond can be as low as 1.2ppm/K. The thermal conductivity of copper is among the best among metals, with a value of 397W/m.K and a thermal expansion coefficient of 18ppm/K. The thermal conductivity of the composite heat dissipation substrate made by filling copper in the gaps of diamond particles by using the ductility of copper material can reach 800W/m.K, and the thermal expansion coefficient is about 5ppm/K. This material is most suitable for making substrates for high-power semiconductor chips and heat-conducting materials, such as heat-dissipating substrates for LED chips in the present invention. In addition to high thermal conductivity, the thermal expansion coefficient of the diamond-copper composite sheet can be adjusted to be close to that of the semiconductor chip to avoid damage to the semiconductor chip by thermal stress. From the perspective of heat dissipation from the heat dissipation substrate to the air, the contact area between the heat dissipation substrate and the air and the convection heat dissipation method are extremely important, and the surface of the diamond powder and copper powder composite heat dissipation substrate is already very rough without additional processing. Thermal conductivity is very beneficial; from a structural point of view, diamond powder and copper powder composite heat dissipation substrates are easy to shape, because the shape of the final heat dissipation substrate changes according to the shape of the mold, unlike metal substrates Complex processes such as punching and cutting are required. This advantage makes the diamond powder and copper powder composite heat dissipation substrate more effectively coupled with the LED chip. the

散热基板11的制作方法是,把超高导热的金刚石(2000 W/m.K)200~300目粉颗粒和高导热的铜粉300~400目(400 W/m.K)颗粒按(以体积为比例,金刚石的体积比是40%~60%)混合,由于金刚石和铜的浸润性不好,金刚石粉表面进行表面金属化处理,利用磁控溅射的方法在颗粒表面镀覆质量比为0.1%~0.3%的过渡族金属,例如铬、钛、钼。表面金属化处理有利于铜粉和金刚石粉在后期的粉末烧结工艺中提高晶界润湿性。我们把混合物质放入事先做好的模具中,模具形状可以根据需求改变,然后置于等离子体真空高压烧结炉中烧结,升温时间10~15min,温度达到1000~1050℃,压强20~40MPa,烧结时间10~15min 。烧结后的复合材料,再做氩气氛围下的热等静压,压强为150~200MPa,温度1000~1040℃,保温3~4h。进一步使晶界处的金属原子和碳原子之间形成化学键,两者有机结合,把空隙数量降至最少。因为金刚石是声子传热,空隙会造成大的热阻。这样就制备出致密的块状金刚石粉-铜粉复合材料。我们可以机械加工出我们想要的散热基板,如果前面工艺中的模具做的合适,甚至就不需要机械加工步骤了。我们调整实验数据得到不同热导率的金刚石粉铜粉复合材料。实验结果数据表格如表1所示,其中金刚石为200目,铜粉为300目。 The manufacturing method of the heat dissipation substrate 11 is to combine ultra-high thermal conductivity diamond (2000 W/m.K) 200-300 mesh powder particles and high thermal conductivity copper powder 300-400 mesh (400 W/m.K) particles by (proportioned by volume, The volume ratio of diamond is 40%~60%) mixed, because the wettability of diamond and copper is not good, the surface of diamond powder is treated with surface metallization, and the mass ratio of coating on the particle surface by magnetron sputtering is 0.1%~ 0.3% transition metals such as chromium, titanium, molybdenum. The surface metallization treatment is beneficial to improve the grain boundary wettability of copper powder and diamond powder in the later powder sintering process. We put the mixed material into the pre-made mold. The shape of the mold can be changed according to the demand, and then sintered in the plasma vacuum high-pressure sintering furnace. The heating time is 10~15min, the temperature reaches 1000~1050℃, and the pressure is 20~40MPa. The sintering time is 10~15min. The composite material after sintering is subjected to hot isostatic pressing under an argon atmosphere, the pressure is 150~200MPa, the temperature is 1000~1040℃, and the heat preservation is 3~4h. Further, chemical bonds are formed between metal atoms and carbon atoms at the grain boundaries, and the two are organically combined to minimize the number of voids. Because diamond conducts heat by phonons, the voids cause a large thermal resistance. In this way, a dense block diamond powder-copper powder composite material is prepared. We can machine the heat dissipation substrate we want, and if the mold in the previous process is done properly, there is no need for machining steps. We adjusted the experimental data to obtain diamond powder copper powder composites with different thermal conductivity. The data table of the experimental results is shown in Table 1, in which the diamond is 200 mesh, and the copper powder is 300 mesh.

表1 Table 1

实验experiment 比例(金刚石体积百分比)Ratio (diamond volume percentage) 烧结温度(℃)Sintering temperature (°C) 压强(MPa)Pressure (MPa) 烧结时间(min)Sintering time (min) 热导率(W/m.K)Thermal conductivity (W/m.K) 实验1Experiment 1 4040 10101010 2020 1010 513513 实验2Experiment 2 4040 10301030 3030 1010 525525 实验3Experiment 3 4040 10401040 4040 1010 517517 实验4Experiment 4 5050 10101010 3030 1010 533533 实验5Experiment 5 5050 10301030 4040 1010 547547 实验6Experiment 6 5050 10401040 2020 1010 482482 实验7Experiment 7 6060 10101010 4040 1010 606606 实验8Experiment 8 6060 10301030 2020 1010 589589 实验9Experiment 9 6060 10401040 3030 1010 734734

如图2a所示:该结构和图1基板相同,差别在于散热基板11的下表面作出散热鳍片111。LED工作时的热量通过散热基板向下经由散热鳍片向空气辐射,也可以由散热基板的侧面像空气散热。这里,散热基板的侧面也可以加工出鳍片,或者其他粗化样式,以加强空气对流散热。 As shown in FIG. 2 a : the structure is the same as that of the substrate in FIG. 1 , the difference is that heat dissipation fins 111 are formed on the lower surface of the heat dissipation substrate 11 . When the LED is working, the heat is radiated downward through the heat dissipation substrate to the air through the heat dissipation fins, and can also be dissipated by the side of the heat dissipation substrate like air. Here, fins or other roughened patterns can also be processed on the side of the heat dissipation substrate to enhance air convection heat dissipation.

如图2b所示:散热基板11的结构图,上表面有凹坑112,下表面有散热鳍片111,散热鳍片的尺寸和排布可以根据需求作出改变。这样大大简化了封装结构,用同一块金刚石粉和铜粉复合材料,加工一体化加工,做出一个集散热基板,鳍片,反射杯与一体的形状,这样使得LED封装工序简化,降低了批量生产的成本。另一个重要优点体现在LED性能方面,使用图中结构封装LED芯片6,热传导路径很短,即LED芯片6,固晶胶4到散热基板到空气,中间没有其他介质。除了固晶胶4热阻大些,固晶除了用银胶,也可以用金锡合金,为了减少热阻,使用金锡共晶焊更好。没有散热金属小块,没有其他散热材料,所以导热效果肯定很好。 As shown in FIG. 2 b : the structural diagram of the heat dissipation substrate 11 , there are pits 112 on the upper surface, and heat dissipation fins 111 on the lower surface. The size and arrangement of the heat dissipation fins can be changed according to requirements. This greatly simplifies the packaging structure, using the same diamond powder and copper powder composite material, processing integrated processing, to make a shape that integrates the heat dissipation substrate, fins, and reflective cups, which simplifies the LED packaging process and reduces the batch size. The cost of production. Another important advantage is reflected in the performance of the LED. Using the structure in the figure to package the LED chip 6, the heat conduction path is very short, that is, the LED chip 6, the die-bonding glue 4 to the heat dissipation substrate to the air, and there is no other medium in between. In addition to the higher thermal resistance of die-bonding glue 4, in addition to silver glue, gold-tin alloy can also be used for die-bonding. In order to reduce thermal resistance, it is better to use gold-tin eutectic soldering. There are no small pieces of heat-dissipating metal, and no other heat-dissipating materials, so the heat conduction effect must be good.

如图3所示:该结构和图2a基板相同,差别在于凹坑112里面放置多个LED芯片6。LED芯片6可以发相同波长的光,也可以发不同波长的光,不如红、绿、蓝三色。或者黄光和蓝光搭配。可以调整凹坑112的深度和侧边的倾斜角度,以及里面的LED芯片的排布方式,来改变出光的配光曲线。 As shown in FIG. 3 : the structure is the same as that of the substrate in FIG. 2 a , the difference is that a plurality of LED chips 6 are placed in the cavity 112 . The LED chip 6 can send light of the same wavelength or light of different wavelengths, not as good as red, green and blue. Or a combination of yellow light and blue light. The depth of the pit 112 and the inclination angle of the sides, as well as the arrangement of the LED chips inside can be adjusted to change the light distribution curve of the emitted light.

如图4a所示:散热基板11上方有凹坑112,LED芯片放置在凹坑112的底面上。凹坑112的中心部位有穿孔113,穿孔113里面有导线,通过散热基板11下表面的电极,向LED芯片6供电。凹坑112内表面有该反射涂层,凹坑112相当于反射杯。图中的穿孔可以多于两个,比如四个,该图中的凹坑中也可放置大于1个LED芯片6。另外在这种结构中,可以使用LED芯片的倒装封装方式,这样的话,就可以免去引线5,因为此种情形下,芯片的两个电极都与穿孔非常近,只有调整穿孔的位置,就可以用导热导电胶把两个电极连接至穿孔位置处。 As shown in FIG. 4 a , there is a pit 112 above the heat dissipation substrate 11 , and the LED chip is placed on the bottom surface of the pit 112 . There is a perforation 113 in the center of the pit 112 , and there is a wire in the perforation 113 , which supplies power to the LED chip 6 through the electrodes on the lower surface of the heat dissipation substrate 11 . The inner surface of the pit 112 has the reflective coating, and the pit 112 is equivalent to a reflective cup. The perforations in the figure can be more than two, such as four, and more than one LED chip 6 can also be placed in the pit in the figure. In addition, in this structure, the flip-chip packaging method of the LED chip can be used. In this case, the lead 5 can be omitted, because in this case, the two electrodes of the chip are very close to the through hole, and only the position of the through hole can be adjusted. The two electrodes can then be connected to the perforated positions with thermally and electrically conductive adhesive.

如图4b所示: 外部电路通过下表面电极9,再经过穿孔113向LED芯片供电,这里的穿孔可以大于两个,对应的引线5也可以大于两条。也可以考虑多个LED芯片集成封装。 As shown in Fig. 4b: The external circuit supplies power to the LED chip through the electrode 9 on the lower surface, and then through the through hole 113, where the number of through holes can be more than two, and the corresponding lead wires 5 can also be more than two. Integrated packaging of multiple LED chips can also be considered.

Claims (10)

1.散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,包括LED芯片(6)和透镜(7),其特征在于还包括金刚石粉-铜粉复合材料制成的散热基板(11);所述散热基板(11)的下表面直接和空气接触,上表面设有凹坑(112),LED芯片(6)通过固晶胶(4)或金属共晶焊直接安置在散热基板(11)上表面的所述凹坑(112)底部;所述凹坑(112)中填充有绝缘弹性透明物质(8),绝缘弹性透明物质(8)覆盖整个LED芯片(6)及其引线,透镜(7)盖在凹坑上。 1. The heat dissipation substrate is a high-power light-emitting diode made of diamond powder-copper powder composite material, including LED chips (6) and lenses (7), and is characterized in that it also includes a heat dissipation substrate (11) made of diamond powder-copper powder composite material The lower surface of the heat dissipation substrate (11) is directly in contact with the air, and the upper surface is provided with a pit (112), and the LED chip (6) is directly placed on the heat dissipation substrate (11) through the solid crystal glue (4) or metal eutectic welding. ) bottom of the pit (112) on the upper surface; the pit (112) is filled with an insulating elastic transparent substance (8), and the insulating elastic transparent substance (8) covers the entire LED chip (6) and its leads, lens (7) Cover over the pit. 2.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,散热基板(11)下表面设有电极,所述凹坑开有贯穿至散热基板(11)下表面的穿孔,LED芯片(6)的引线通过穿孔与散热基板(11)下表面的电极连接。 2. According to claim 1, the high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material is characterized in that electrodes are provided on the lower surface of the heat dissipation substrate (11), and the pits are opened to penetrate to the heat dissipation substrate ( 11) The perforation on the lower surface, the leads of the LED chip (6) are connected to the electrodes on the lower surface of the heat dissipation substrate (11) through the perforation. 3.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述散热基板除所述凹坑外的上表面设有电路层(3),电路层(3)通过粘合层(2)粘在散热基板上表面,LED芯片(6)的引线与电路层(3)上的电极连接。 3. According to claim 1, the heat-dissipating substrate is a high-power light-emitting diode made of diamond powder-copper powder composite material, characterized in that, the upper surface of the heat-dissipating substrate except the pit is provided with a circuit layer (3), and the circuit The layer (3) is adhered to the upper surface of the heat dissipation substrate through the adhesive layer (2), and the leads of the LED chip (6) are connected to the electrodes on the circuit layer (3). 4.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述散热基板(11)的下表面加工成散热鳍片(111)。 4. The high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material according to claim 1, wherein the lower surface of the heat dissipation substrate (11) is processed into heat dissipation fins (111). 5.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述透镜(7)覆盖LED芯片(6)及其引线。 5. The high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material according to claim 1, wherein the lens (7) covers the LED chip (6) and its leads. 6.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述绝缘弹性透明物质(8)为硅胶。 6. The high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material according to claim 1, wherein the insulating elastic transparent substance (8) is silica gel. 7.根据权利要求1所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述绝缘弹性透明物质(8)中掺有荧光粉。 7 . The high-power light-emitting diode whose heat dissipation substrate is a diamond powder-copper powder composite material according to claim 1 , wherein phosphor powder is doped in the insulating elastic transparent substance ( 8 ). 8.根据权利要求1~7任一项所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述凹坑(112)中安置有多个LED芯片(6)。 8. According to any one of claims 1 to 7, the heat dissipation substrate is a high-power light-emitting diode made of diamond powder-copper powder composite material, characterized in that a plurality of LED chips (6) are placed in the pit (112) . 9.根据权利要求1~7任一项所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述凹坑(112)表面有高反射物质。 9. According to any one of claims 1 to 7, the heat dissipation substrate is a high-power light-emitting diode made of diamond powder-copper powder composite material, characterized in that the surface of the pit (112) has a highly reflective substance. 10.根据权利要求1~7任一项所述散热基板为金刚石粉-铜粉复合材料的大功率发光二极管,其特征在于,所述金刚石粉-铜粉复合材料由如下方法制备:把超高导热的金刚石200~300目粉颗粒和高导热的铜粉300~400目颗粒按混合,其中金刚石的体积比是40%~60%,利用磁控溅射的方法在混合颗粒表面镀覆质量比为0.1%~0.3%的过渡族金属,所述过渡族金属包括铬、钛或钼;把处理后的混合物放入模具中,然后置于等离子体真空高压烧结炉中烧结,升温时间10~15min,温度达到1000~1050℃,压强20~40MPa,烧结时间10~15min ;烧结后的复合材料,再做氩气氛围下的热等静压,压强为150~200MPa,温度1000~1040℃,保温3~4h,得所述金刚石粉-铜粉复合材料。 10. According to any one of claims 1 to 7, the heat dissipation substrate is a high-power light-emitting diode of a diamond powder-copper powder composite material, wherein the diamond powder-copper powder composite material is prepared by the following method: Thermally conductive diamond powder particles of 200~300 mesh and high thermal conductive copper powder particles of 300~400 mesh are mixed, and the volume ratio of diamond is 40%~60%. The mass ratio of the mixed particle surface is coated by magnetron sputtering. 0.1%~0.3% transition group metals, the transition group metals include chromium, titanium or molybdenum; put the processed mixture into a mold, then place it in a plasma vacuum high pressure sintering furnace for sintering, and the heating time is 10~15min , the temperature reaches 1000~1050℃, the pressure is 20~40MPa, and the sintering time is 10~15min. 3 to 4 hours to obtain the diamond powder-copper powder composite material.
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CN104625077A (en) * 2013-11-14 2015-05-20 河北联合大学 High-heat-conduction diamond/copper composite material and manufacturing method of high-heat-conduction diamond/copper composite material
CN106098901A (en) * 2016-08-02 2016-11-09 王川 A kind of high-heat-dispersion LED substrate, LED encapsulation and LED
CN107068834A (en) * 2016-12-27 2017-08-18 江苏稳润光电科技有限公司 A kind of LED product with convex lens
CN109411587A (en) * 2018-12-10 2019-03-01 邱凡 A kind of purple LED production method and its purple LED containing silica-gel lens
CN114616930A (en) * 2019-11-08 2022-06-10 微芯片技术卡尔迪科特有限公司 Chemical vapor deposited diamond (CVDD) wire for heat transfer
CN115542610A (en) * 2022-10-26 2022-12-30 南通惟怡新材料科技有限公司 Side light-emitting quantum dot lens, backlight module and quantum dot lens manufacturing method
CN117012736A (en) * 2023-09-04 2023-11-07 黄山谷捷股份有限公司 Power module heat dissipation substrate and manufacturing method thereof
CN117020209A (en) * 2023-10-09 2023-11-10 赣州金顺科技有限公司 Heat dissipation substrate and preparation method thereof

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CN103090231A (en) * 2013-01-22 2013-05-08 钦州盛和电子科技有限公司 High-power light-emitting diode (LED) module and manufacturing method thereof
CN104625077A (en) * 2013-11-14 2015-05-20 河北联合大学 High-heat-conduction diamond/copper composite material and manufacturing method of high-heat-conduction diamond/copper composite material
CN106098901A (en) * 2016-08-02 2016-11-09 王川 A kind of high-heat-dispersion LED substrate, LED encapsulation and LED
CN106098901B (en) * 2016-08-02 2018-06-22 王一川 A kind of high-heat-dispersion LED substrate, LED encapsulation and LED light
CN107068834A (en) * 2016-12-27 2017-08-18 江苏稳润光电科技有限公司 A kind of LED product with convex lens
CN109411587B (en) * 2018-12-10 2020-11-27 浙江单色电子科技有限公司 A kind of production method of violet LED containing silica gel lens and violet LED
CN109411587A (en) * 2018-12-10 2019-03-01 邱凡 A kind of purple LED production method and its purple LED containing silica-gel lens
CN114616930A (en) * 2019-11-08 2022-06-10 微芯片技术卡尔迪科特有限公司 Chemical vapor deposited diamond (CVDD) wire for heat transfer
CN115542610A (en) * 2022-10-26 2022-12-30 南通惟怡新材料科技有限公司 Side light-emitting quantum dot lens, backlight module and quantum dot lens manufacturing method
CN117012736A (en) * 2023-09-04 2023-11-07 黄山谷捷股份有限公司 Power module heat dissipation substrate and manufacturing method thereof
CN117012736B (en) * 2023-09-04 2024-01-26 黄山谷捷股份有限公司 Power module heat dissipation substrate and manufacturing method thereof
CN117020209A (en) * 2023-10-09 2023-11-10 赣州金顺科技有限公司 Heat dissipation substrate and preparation method thereof
CN117020209B (en) * 2023-10-09 2024-01-26 赣州金顺科技有限公司 Heat dissipation substrate and preparation method thereof

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