CN102903838A - Packaged LED light source with heat dissipation structure and preparation method thereof - Google Patents
Packaged LED light source with heat dissipation structure and preparation method thereof Download PDFInfo
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- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
Description
技术领域 technical field
本发明涉及一种电子元件及其制备方法,尤其是一种带散热结构的封装LED光源及其制备方法。The invention relates to an electronic component and a preparation method thereof, in particular to a packaged LED light source with a heat dissipation structure and a preparation method thereof.
背景技术 Background technique
所谓的LED(Light Emitting Diode)即为半导体发光二极管,是一种能将电能转化为光能的半导体器件,被广泛的用作手电筒、显示屏、指示灯等等。白光LED被誉为替代荧光灯和白炽灯的第四代照明光源。LED具有响应速度快、对比度高、寿命长,无辐射,低功耗等等特点。然而,LED灯的工作原理使得在大功率LED照明行业里散热问题变得非常突出,许多LED照明方案不够重视散热,所以目前量产的大功率LED灯普遍存在实际使用寿命远远不如理论值,性价比低于传统灯具的尴尬情况。并且LED中的PN结的工作温度越高,发光效率越低,LED寿命越短,同时还会产生光衰现象。The so-called LED (Light Emitting Diode) is a semiconductor light-emitting diode, which is a semiconductor device that can convert electrical energy into light energy. It is widely used as a flashlight, display screen, indicator light, etc. White LED is known as the fourth-generation lighting source to replace fluorescent lamps and incandescent lamps. LED has the characteristics of fast response, high contrast, long life, no radiation, low power consumption and so on. However, the working principle of LED lamps makes the heat dissipation problem very prominent in the high-power LED lighting industry. Many LED lighting solutions do not pay enough attention to heat dissipation, so the current mass-produced high-power LED lamps generally have an actual service life that is far less than the theoretical value. The cost performance is lower than the embarrassing situation of traditional lamps. And the higher the operating temperature of the PN junction in the LED, the lower the luminous efficiency, the shorter the life of the LED, and at the same time, the phenomenon of light decay will occur.
一般情况下,当正向电流流经PN结,发热性损耗使结区产生温升。在室温附近,温度每升高1℃,LED的发光强度会相应地减少1%左右。另外,LED的发光波长随温度变化为0.2~0.3nm/℃,光谱宽度随之增加,影响颜色鲜艳度。LED可以在-40℃~85℃的环境中工作,一般发光效率最好的环境温度是-40℃~40℃,超出此范围发光效率将大幅降低。封装散热对保持色纯度与发光强度非常重要,散热设计是LED能否成功应用的关键技术,LED封装时必须充分重视,以保证PN结的温度不超过允许温度。常规的LED散热装置是通过铝合金散热器来散热,由铝合金材料实现集散热的目的。但是散热效果不是很理想。而水热导管搭配散热器对LED进行散热处理的方式散热结构较复杂,制作工艺复杂,而且散热效率不佳。In general, when the forward current flows through the PN junction, the exothermic loss causes the junction area to generate a temperature rise. Near room temperature, for every 1°C increase in temperature, the luminous intensity of the LED will decrease by about 1%. In addition, the luminous wavelength of the LED varies with temperature from 0.2 to 0.3 nm/°C, and the spectral width increases accordingly, which affects the vividness of the color. LEDs can work in an environment of -40°C to 85°C. Generally, the ambient temperature with the best luminous efficiency is -40°C to 40°C. If it exceeds this range, the luminous efficiency will be greatly reduced. Packaging heat dissipation is very important to maintain color purity and luminous intensity. Heat dissipation design is the key technology for the successful application of LEDs. Full attention must be paid to LED packaging to ensure that the temperature of the PN junction does not exceed the allowable temperature. The conventional LED cooling device dissipates heat through an aluminum alloy radiator, and the aluminum alloy material realizes the purpose of collecting and dissipating heat. But the cooling effect is not very ideal. However, the water heat pipe combined with the heat sink to dissipate the heat of the LED has a complex heat dissipation structure, complicated manufacturing process, and poor heat dissipation efficiency.
发明内容 Contents of the invention
本发明的目的是:提供一种带散热结构的封装LED光源及其制备方法,它的散热效果好,结构简单,制成工艺少,生产成本低廉,以克服现有技术的不足。The purpose of the present invention is to provide a packaged LED light source with heat dissipation structure and its preparation method, which has good heat dissipation effect, simple structure, less manufacturing process and low production cost, so as to overcome the shortcomings of the prior art.
本发明是这样实现的:带散热结构的封装LED光源,包括散热器,在散热器上设有导热器,散热器的顶部与导热器的底部为对应的齿形结构,导热器的顶部为凹槽结构,在导热器的顶面覆盖有导热陶瓷,在导热陶瓷上设有导线层;在导热器的凹槽中部设有LED芯片,LED芯片通过金线与导线层连接,在导热器的凹槽中设有荧光粉层,在荧光粉层上方设有玻璃透镜。The present invention is realized in the following way: the packaged LED light source with heat dissipation structure includes a radiator, and a heat conductor is arranged on the radiator. The top of the radiator and the bottom of the heat conductor are corresponding tooth-shaped structures, and the top of the heat conductor is a concave Groove structure, the top surface of the heat conductor is covered with heat-conducting ceramics, and a wire layer is arranged on the heat-conducting ceramics; an LED chip is arranged in the middle of the groove of the heat conductor, and the LED chip is connected to the wire layer through a gold wire. A fluorescent powder layer is arranged in the groove, and a glass lens is arranged above the fluorescent powder layer.
散热器及导热器为铝基板或者铜基板。The radiator and heat conductor are aluminum substrates or copper substrates.
导热陶瓷为氧化铝或氮化铝。Thermally conductive ceramics are alumina or aluminum nitride.
荧光粉层由环氧树脂和荧光粉组成,环氧树脂和荧光粉的混合比列根据LED芯片发光强度和波长按照惯用比例进行混合。The phosphor layer is composed of epoxy resin and phosphor powder, and the mixing ratio of epoxy resin and phosphor powder is mixed according to the customary ratio according to the luminous intensity and wavelength of the LED chip.
所述的导线层的材料为Mo、Au、Cu、Ag、Ni或Al中的一种或几种的搭配与组合,或者它们的合金,或者金属与合金的搭配与组合。The material of the wire layer is one or a combination of Mo, Au, Cu, Ag, Ni or Al, or their alloys, or the combination and combination of metals and alloys.
带散热结构的封装LED光源的制备方法,A method for preparing a packaged LED light source with a heat dissipation structure,
步骤一:采用机械加工的方式将铝基板或铜基板加工成散热器及导热器,将散热器的顶部与导热器的底部加工为对应的齿形结构,并将导热器的顶部加工为凹槽结构;Step 1: Process the aluminum substrate or copper substrate into radiators and heat conductors by machining, process the top of the radiator and the bottom of the heat conductor into corresponding tooth structures, and process the top of the heat conductor into grooves structure;
步骤二:利用磁控溅射法在导热器的顶部生长一层导热陶瓷;Step 2: growing a layer of heat-conducting ceramics on the top of the heat spreader by magnetron sputtering;
步骤三:利用磁控溅射法在导热陶瓷的顶面沉积出一层金属层;Step 3: Deposit a metal layer on the top surface of the heat-conducting ceramic by magnetron sputtering;
步骤四:在步骤三的基础上,对金属层进行掩膜刻蚀,刻蚀深度至导热陶瓷表面,在导热陶瓷表面形成导线层;Step 4: On the basis of
步骤五:用导热硅胶把LED芯片粘连到导热器顶部的凹槽内,并用金线将对LED芯片和导线层进行连接,再将环氧树脂和荧光进行混合,然后将该混合物覆盖到导热器顶部的凹槽中,形成荧光粉层;Step 5: Use thermal silicone to stick the LED chip to the groove on the top of the heat spreader, and use gold wire to connect the LED chip and the wire layer, then mix the epoxy resin and fluorescent, and then cover the mixture on the heat spreader In the groove on the top, a phosphor layer is formed;
步骤六:将玻璃透镜密封胶固定在导热器上,用密封胶将导热器和封装外壳接触的地方密封严实;Step 6: Fix the glass lens sealant on the heat spreader, and use the sealant to seal tightly the contact between the heat spreader and the package shell;
步骤七:将导热器与散热器之间用导热硅胶进行粘连。Step 7: Adhere the heat spreader and radiator with thermal silica gel.
所述的刻蚀的方法采用湿法刻蚀或法刻蚀、以及湿法刻蚀和法刻蚀相结合的方法。The etching method adopts wet etching or normal etching, and a combination of wet etching and normal etching.
由于采用了上述的技术方案,与现有技术相比,本发明在导热器的顶部设置凹槽结构,使置于该凹槽中的LED芯片能充分与导热器接触,导热器将LED芯片发出的热量传递给散热器,这样的结构能有效的将LED芯片发光时所产生的热量散发掉,而且产品的结构简单,制备工艺少,适合产业化生产,生产成本低,所得到的产品具有较好的物理性能及化学稳定性,使用寿命长,制作成本较低,具有广泛的应用价值。Due to the adoption of the above-mentioned technical scheme, compared with the prior art, the present invention provides a groove structure on the top of the heat conductor, so that the LED chip placed in the groove can fully contact the heat conductor, and the heat conductor sends out the LED chip. This structure can effectively dissipate the heat generated by the LED chip when it emits light, and the product has a simple structure, less preparation process, suitable for industrial production, and low production cost. Good physical properties and chemical stability, long service life, low production cost, and wide application value.
附图说明 Description of drawings
图1为散热器的结构示意图;Fig. 1 is the structural representation of radiator;
图2为导热器顶部没有进行机加工前的结构示意图;Fig. 2 is a structural schematic diagram before the top of the heat spreader is not machined;
图3为导热器顶部进行机加工后的结构示意图;Fig. 3 is a structural schematic diagram of the top of the heat spreader after machining;
图4为图3的A-A剖视图;Fig. 4 is A-A sectional view of Fig. 3;
图5为生长了导热陶瓷后的平面图;Figure 5 is a plan view after growing thermally conductive ceramics;
图6为图5的A-A剖视图;Fig. 6 is A-A sectional view of Fig. 5;
图7为沉积、掩膜、刻蚀出导线层后的平面图;Fig. 7 is a plan view after depositing, masking, and etching a wire layer;
图8为图7的A-A剖视图;Fig. 8 is A-A sectional view of Fig. 7;
图9为装入了LED芯片并覆盖了荧光粉层后的平面图;Fig. 9 is a plan view after loading the LED chip and covering the phosphor layer;
图10为图9的A-A剖视图;Fig. 10 is A-A sectional view of Fig. 9;
图11为封装了玻璃透镜后的剖视图;Fig. 11 is a cross-sectional view after encapsulating the glass lens;
图12为导热器和散热器进行粘连后的平面图;Fig. 12 is the plane view after the heat spreader and radiator are bonded;
图13为图12的A-A剖视图;Fig. 13 is A-A sectional view of Fig. 12;
图14为本发明多芯片LED的平面图;14 is a plan view of a multi-chip LED of the present invention;
附图标记:Reference signs:
1-散热器、2-导热器、3-导热陶瓷、4-导线层、5-玻璃透镜、6-荧光粉层、7-金线、8-LED芯片。1-radiator, 2-heat conductor, 3-thermal ceramic, 4-wire layer, 5-glass lens, 6-phosphor powder layer, 7-gold wire, 8-LED chip.
具体实施方式 Detailed ways
本发明的实施例1:带散热结构的封装LED光源的结构如图1所示,包括铝基板为材料的散热器1,在散热器1上设有铝基板为材料的导热器2,散热器1的顶部与导热器2的底部为对应的齿形结构,导热器2的顶部为凹槽结构,在导热器2的顶面覆盖有氧化铝为材料的导热陶瓷3,在导热陶瓷3上设有以Cu为材料的导线层4;在导热器2的凹槽中部设有LED芯片8,LED芯片8通过金线7与导线层4连接,在导热器2的凹槽中设有荧光粉层6,荧光粉层6由环氧树脂和荧光粉组成,将环氧树脂和荧光粉根据LED芯片发光强度和波长按照现有技术中提供的比例进行混合,在荧光粉层6上方设有玻璃透镜5。Embodiment 1 of the present invention: The structure of the packaged LED light source with a heat dissipation structure is shown in Figure 1, including a heat sink 1 made of an aluminum substrate, and a
带散热结构的封装LED光源的制备方法,A method for preparing a packaged LED light source with a heat dissipation structure,
步骤一:采用机械加工的方式将铝基板加工成散热器1及导热器2,将散热器1的顶部与导热器2的底部加工为对应的齿形结构,并将导热器2的顶部加工为凹槽结构;Step 1: Machining the aluminum substrate into heat sink 1 and
步骤二:利用磁控溅射法,以氧化铝为材料,在导热器2的顶部生长一层导热陶瓷3;Step 2: using the magnetron sputtering method to grow a layer of heat-conducting ceramic 3 on the top of the
步骤三:利用磁控溅射法,以金属铜为材料,在导热陶瓷3的顶面沉积出一层金属层;Step 3: Deposit a metal layer on the top surface of the heat-conducting ceramic 3 by using the magnetron sputtering method and using metal copper as the material;
步骤四:在步骤三的基础上,对金属层进行掩膜刻蚀,刻蚀深度至导热陶瓷3表面,在导热陶瓷3表面形成导线层4;Step 4: On the basis of
步骤五:用导热硅胶把LED芯片8粘连到导热器2顶部的凹槽内,并用金线7将对LED芯片8和导线层4进行连接,再将环氧树脂和荧光粉根据LED芯片发光强度和波长按照现有技术中提供的比例进行混合,覆盖到导热器2顶部的凹槽中,形成荧光粉层;Step 5: Adhere the
步骤六:将玻璃透镜5密封胶固定在导热器2上,用密封胶将导热器2和封装外壳接触的地方密封严实;Step 6: Fix the sealant of the glass lens 5 on the
步骤七:将导热器2与散热器1之间用导热硅胶进行粘连。Step 7: Adhere the
本发明的实施例2:带散热结构的封装LED光源的制备方法,
步骤一:采用机械加工的方式将铜基板加工成散热器1及导热器2,将散热器1的顶部与导热器2的底部加工为对应的齿形结构,并将导热器2的顶部加工为凹槽结构;Step 1: Machining the copper substrate into heat sink 1 and
步骤二:利用磁控溅射法,以氮化铝为材料,在导热器2的顶部生长一层导热陶瓷3;Step 2: growing a layer of heat-conducting ceramic 3 on the top of the
步骤三:利用磁控溅射法,以铜银合金为材料,在导热陶瓷3的顶面沉积出一层金属层;Step 3: Deposit a metal layer on the top surface of the heat-conducting ceramic 3 by using the magnetron sputtering method and using copper-silver alloy as the material;
步骤四:在步骤三的基础上,对金属层进行掩膜刻蚀,刻蚀深度至导热陶瓷3表面,在导热陶瓷3表面形成导线层4;Step 4: On the basis of
步骤五:用导热硅胶把LED芯片8粘连到导热器2顶部的凹槽内,并用金线7将对LED芯片8和导线层4进行连接,再将环氧树脂和荧光粉根据LED芯片发光强度和波长按照现有技术中提供的比例进行混合,覆盖到导热器2顶部的凹槽中,形成荧光粉层;Step 5: Adhere the
步骤六:将玻璃透镜5密封胶固定在导热器2上,用密封胶将导热器2和封装外壳接触的地方密封严实;Step 6: Fix the sealant of the glass lens 5 on the
步骤七:将导热器2与散热器1之间用导热硅胶进行粘连。Step 7: Adhere the
此外,可将多个LED芯片8制作为如图14所示的结构。In addition, a plurality of
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105098046A (en) * | 2014-05-19 | 2015-11-25 | 四川新力光源股份有限公司 | LED light source substrate, method for manufacturing LED light source substrate and LED light source |
CN105470369A (en) * | 2015-11-20 | 2016-04-06 | 中山市天圣长和管理技术咨询有限公司 | A low-power LED lamp with micro-grid structure and preparation method of graphene film thereof |
CN105552194A (en) * | 2016-03-23 | 2016-05-04 | 中山芯达电子科技有限公司 | A kind of LED chip package body |
CN107906424A (en) * | 2017-12-14 | 2018-04-13 | 广东工业大学 | A kind of LED spotlights |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070246715A1 (en) * | 2006-04-21 | 2007-10-25 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package having multi-stepped reflecting surface structure and fabrication method thereof |
US20090289272A1 (en) * | 2008-05-23 | 2009-11-26 | Kim Geun Ho | Light emitting device package |
CN102022625A (en) * | 2009-05-20 | 2011-04-20 | 明维投资股份有限公司 | Led packaging structure |
CN201909274U (en) * | 2010-12-27 | 2011-07-27 | 河南新飞利照明科技有限责任公司 | RGB (red, green and blue) three-colored LED (light-emitting diode) point light source |
-
2012
- 2012-07-10 CN CN201210237296XA patent/CN102903838A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070246715A1 (en) * | 2006-04-21 | 2007-10-25 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package having multi-stepped reflecting surface structure and fabrication method thereof |
US20090289272A1 (en) * | 2008-05-23 | 2009-11-26 | Kim Geun Ho | Light emitting device package |
CN102022625A (en) * | 2009-05-20 | 2011-04-20 | 明维投资股份有限公司 | Led packaging structure |
CN201909274U (en) * | 2010-12-27 | 2011-07-27 | 河南新飞利照明科技有限责任公司 | RGB (red, green and blue) three-colored LED (light-emitting diode) point light source |
Cited By (6)
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CN105098046A (en) * | 2014-05-19 | 2015-11-25 | 四川新力光源股份有限公司 | LED light source substrate, method for manufacturing LED light source substrate and LED light source |
CN105470369A (en) * | 2015-11-20 | 2016-04-06 | 中山市天圣长和管理技术咨询有限公司 | A low-power LED lamp with micro-grid structure and preparation method of graphene film thereof |
CN105470369B (en) * | 2015-11-20 | 2018-02-27 | 广东天圣高科股份有限公司 | Low-power L ED lamp with micro-grid structure and preparation method of graphene film of low-power L ED lamp |
CN105552194A (en) * | 2016-03-23 | 2016-05-04 | 中山芯达电子科技有限公司 | A kind of LED chip package body |
CN107906424A (en) * | 2017-12-14 | 2018-04-13 | 广东工业大学 | A kind of LED spotlights |
WO2019114194A1 (en) * | 2017-12-14 | 2019-06-20 | 广东工业大学 | Led spotlight |
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