[go: up one dir, main page]

CN105322077A - Light emitting diode packaging structure - Google Patents

Light emitting diode packaging structure Download PDF

Info

Publication number
CN105322077A
CN105322077A CN201510282588.9A CN201510282588A CN105322077A CN 105322077 A CN105322077 A CN 105322077A CN 201510282588 A CN201510282588 A CN 201510282588A CN 105322077 A CN105322077 A CN 105322077A
Authority
CN
China
Prior art keywords
emitting diode
substrate
light
led
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510282588.9A
Other languages
Chinese (zh)
Other versions
CN105322077B (en
Inventor
邱仕宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN105322077A publication Critical patent/CN105322077A/en
Application granted granted Critical
Publication of CN105322077B publication Critical patent/CN105322077B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8515Wavelength conversion means not being in contact with the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

A light emitting diode packaging structure comprises a packaging shell, a fluorescent layer, a substrate and a light emitting diode chip. The packaging shell is provided with an accommodating space. The fluorescent layer is coated on one side of the packaging shell. The substrate is arranged in the accommodating space. The light emitting diode chip is arranged on the first surface of the substrate, wherein the surface of the light emitting diode chip is not directly covered with a colloid, and the light emitting diode chip and the packaging shell are separated from each other by a distance. The LED lamp has better overall luminous efficiency, better uniformity of reflected light and better luminous angle of all-round light.

Description

发光二极管封装结构Light-emitting diode packaging structure

技术领域technical field

本发明是有关于一种发光二极管封装结构,且特别是有关于一种全周光发光二极管封装结构。The present invention relates to a packaging structure of light emitting diodes, and in particular to a packaging structure of light emitting diodes with full-circumference light.

背景技术Background technique

自从1995年日本日亚(Nichia)的中村修二博士在蓝宝石基板上成功磊晶成长GaN材料后,制作出第一颗可量产的蓝光发光二极管(blueLED),补足了LED先前只有红光以及绿光产品,使得LED正式走入全彩。而在1996年发表利用InGaN蓝光LED搭配荧光粉的混光封装方式,开发出白光LED后,开启了各种LED的应用方式,使得LED蓬勃的渗入生活环境中,而此白光的LED封装至今为主流技术之一。Since Dr. Shuji Nakamura of Nichia in Japan successfully epitaxially grown GaN materials on sapphire substrates in 1995, he produced the first mass-producible blue light-emitting diode (blueLED), making up for the fact that LEDs previously only had red and green light. Lighting products, making LED officially enter full color. In 1996, the mixed-light packaging method using InGaN blue LEDs and phosphors was published, and after the development of white LEDs, various LED applications were opened, making LEDs vigorously penetrated into the living environment. One of the mainstream technologies.

LED封装最主要的目的在于保护LED,防止水气以及使用时的触碰。通过较佳的支架散热结构,可提升LED产品的可靠性及工作寿命,再搭配好的光学设计的封装外型,可以产生不同的光型及其应用方式。业界的主要LED封装产品,依照封装的外型可分为炮弹或支架型LED(LampLED)、表面粘着型LED(SMDLED)、食人鱼LED(ParanhaLED)、塑胶晶粒乘载封装LED(PLCCLED)、点阵封装LED(Digital/DotMatrixDisplayLED)、印刷电路板LED(PCBLED)、高功率LED(HighPowerLED)以及板上连接式LED(COBLED)等类型为主流,封装形式形形色色,相对应用这些封装产品也是百花齐放。The main purpose of LED packaging is to protect the LED from moisture and touch during use. The reliability and working life of LED products can be improved through the better heat dissipation structure of the bracket, and with the package appearance of good optical design, different light patterns and application methods can be produced. The main LED packaging products in the industry can be divided into cannonball or bracket type LED (Lamp LED), surface mount type LED (SMD LED), piranha LED (Paranha LED), plastic chip carrier package LED (PLCC LED) according to the appearance of the package. Dot-matrix packaged LED (Digital/DotMatrixDisplayLED), printed circuit board LED (PCBLED), high-power LED (HighPowerLED) and board-connected LED (COBLED) are the mainstream, and the package forms are various. Relatively, these packaged products are also blooming.

因为LED的特征为轻薄短小,所以上述的封装形式都是将LED固着于一导热的支架上,LED利用金线与支架连接,为保护连接的金线,需要于LED周围覆盖封装胶来保护LED避免有触碰至LED本体的风险,因为此架构形式,导致LED具有很强的指向性,其发光角度最多只接近140度至150度,所以依据此特性所开发的LED光源模块在照明应用设计上,面临到发光角度不理想、单向光源等与传统光源发光特性不同,导致不适用于传统光源灯具使用。因此,LED照明产品除了取代卤素灯的珠宝灯、装饰橱窗摆饰应用的MR16灯具上广为被接受以及推广外,LED发光角度不理想与价格问题,限制了LED照明产品的市场推广。如能将LED的光学技术突破,开发出全周光型的封装形式,可大幅加速LED在取代传统光源进入传统灯具应用的力道。Because the LED is characterized by being light, thin and short, the above packaging forms are to fix the LED on a heat-conducting bracket. The LED is connected to the bracket with gold wires. In order to protect the connected gold wires, it is necessary to cover the LED with encapsulation glue to protect the LED. Avoid the risk of touching the LED body. Because of this structure, the LED has a strong directivity, and its luminous angle is only close to 140 degrees to 150 degrees at most. Therefore, the LED light source module developed based on this feature is used in lighting application design. On the face of it, the unsatisfactory luminous angle and unidirectional light source have different luminous characteristics from the traditional light source, which makes it not suitable for the use of traditional light source lamps. Therefore, in addition to widely accepting and promoting LED lighting products as jewelry lamps replacing halogen lamps and MR16 lamps for window decoration applications, the unsatisfactory LED lighting angle and price problems limit the market promotion of LED lighting products. If we can break through the optical technology of LEDs and develop a full-circle light package, it will greatly accelerate the power of LEDs to replace traditional light sources and enter traditional lighting applications.

目前已知的封装技术,将单颗或数颗发光二极管用胶材固定在导热基板上,利用金线把发光二极管的正负极与导热基板连接,最后用含有荧光粉的胶材封住基板上的发光二极管,用来保护发光二极管以及在导电时混光形成白光。此封装设计因为使用胶材保护住发光二极管,使封装后的发光二极管方便于运输以及可根据客户需求变化不同的使用设计,但是胶材是不易散热的材料,而发光二极管在运作过程中会产生热,热对半导体材料会导致效率变低以及缩短寿命等问题,胶材又导致热的蓄积,所以必须通过支架将热引导出来,而封装胶材又会限制发光的角度,所以造就了封装过后的发光二极管的特征:指向性、面光源,此光型设计在照明使用上会导致不同于传统的光源,在一些传统的灯具使用上,照明效果无法产生与传统光源一样的舒适感。The currently known packaging technology fixes single or several LEDs on the heat-conducting substrate with glue, uses gold wires to connect the positive and negative poles of the LEDs to the heat-conducting substrate, and finally seals the substrate with glue containing fluorescent powder. The light-emitting diode on the top is used to protect the light-emitting diode and mix light to form white light when conducting electricity. This packaging design uses glue to protect the light-emitting diodes, which makes the packaged light-emitting diodes easy to transport and can be changed according to customer needs. However, the glue is a material that is not easy to dissipate heat, and the light-emitting diodes will generate heat during operation. Heat, heat will cause problems such as low efficiency and shortened lifespan for semiconductor materials, and the adhesive material will cause heat accumulation, so the heat must be guided out through the bracket, and the packaging adhesive material will limit the angle of light emission, so it creates a problem after packaging. The characteristics of light-emitting diodes: directional, surface light source, this light type design will lead to different from traditional light sources in lighting use, in the use of some traditional lamps, the lighting effect cannot produce the same comfort as traditional light sources.

美国专利公告号US6,576,488揭露发光二极管通过电泳披覆技术将荧光层沉积形成于导电基板或非导电基板上,或者是,将荧光涂布片直接贴附于芯片上,以达到增进发光二极管的发光效能目的。但此专利揭露的电泳披覆技术,其制造成本相当昂贵,因此无法降低发光二极管的成本,使得以此一做法制造而成的发光二极管在市场上并不具备价格优势。另外,以荧光涂布片贴附于芯片上的做法,其荧光涂布片必须另外制造,导致备料过程繁复,且贴附荧光涂布片的步骤必须相当精确,其良率不易控制,相对造成制造成本的上升。U.S. Patent No. US6,576,488 discloses that light-emitting diodes deposit a fluorescent layer on a conductive substrate or a non-conductive substrate through electrophoretic coating technology, or directly attach a fluorescent coating sheet to a chip to improve the performance of light-emitting diodes. Luminous efficacy purpose. However, the manufacturing cost of the electrophoretic coating technology disclosed in this patent is quite expensive, so the cost of the light-emitting diode cannot be reduced, so that the light-emitting diode manufactured by this method does not have a price advantage in the market. In addition, in the method of attaching the fluorescent coated sheet to the chip, the fluorescent coated sheet must be manufactured separately, resulting in a complicated material preparation process, and the steps of attaching the fluorescent coated sheet must be quite precise, and the yield rate is difficult to control, which is relatively cost-effective. Rise in manufacturing costs.

中国台湾专利公开号TW201222889揭露分离式荧光粉的封装方式,其主要跟传统的封装差异为多层封装胶体进行包覆发光二极管,因为荧光粉在高温时会有效率衰减导致效率变差以及色温偏移等现象,而发光二极管本身是主要的热源,所以此专利应用多层封装方式,将荧光粉置放于最外层来提升白光效率的稳定性,但此方式并不会解决传统封装发光二极管指向性等问题。China Taiwan Patent Publication No. TW201222889 discloses the encapsulation method of separated phosphors. The main difference from the traditional encapsulation is that the multi-layer encapsulation colloid is used to coat the light-emitting diodes, because phosphors will have efficiency decay at high temperature, resulting in poor efficiency and color temperature deviation. shift and other phenomena, and the light-emitting diode itself is the main heat source, so this patent uses a multi-layer packaging method, placing phosphor powder on the outermost layer to improve the stability of white light efficiency, but this method will not solve the problem of traditional packaging of light-emitting diodes Directivity and other issues.

中国专利公开号CN103322525为一LED灯丝封装方式,把蓝光发光二极管置放在透明的基板上,利用透明基板的两端衔接金属导体,把发光二极管的正负电极串连至金属导体后,利用混和荧光粉的封装胶封住整个透明基板,利用此方式来达到全周光的发光效果,但是封装胶还是附着在整个发光二极管上,会导致温度难以溢散,可靠度不佳。Chinese Patent Publication No. CN103322525 is an LED filament packaging method. The blue light emitting diode is placed on a transparent substrate, and the two ends of the transparent substrate are connected to the metal conductor. After the positive and negative electrodes of the light emitting diode are connected to the metal conductor in series, the mixed The encapsulation glue of the phosphor seals the entire transparent substrate, and this method is used to achieve a full-circle light-emitting effect, but the encapsulation glue is still attached to the entire light-emitting diode, which will cause the temperature to be difficult to escape, and the reliability is not good.

有鉴于前述问题与缺点,发明人乃根据多年实务经验及研究实验,并主要依据照明需求原理,重新定义全新的封装架构,突破传统封装的限制以及缺点,开发出符合照明应用的发光二极管封装结构。In view of the aforementioned problems and shortcomings, the inventors based on years of practical experience and research experiments, and mainly based on the principle of lighting requirements, redefine a new packaging structure, break through the limitations and shortcomings of traditional packaging, and develop a light-emitting diode packaging structure that meets lighting applications .

发明内容Contents of the invention

为解决现有技术中的上述问题,本发明主要目的在于,提供一种发光二极管封装结构,其具有较佳的整体发光效能、较佳的反射光线的均匀性及全周光的发光角度的至少其中之一。In order to solve the above-mentioned problems in the prior art, the main purpose of the present invention is to provide a light-emitting diode packaging structure, which has better overall luminous efficacy, better uniformity of reflected light and at least one of them.

本发明的发光二极管封装结构,包括封装外壳、荧光层、基板以及发光二极管芯片。封装外壳具有容置空间。荧光层涂布于封装外壳一侧。基板设置于容置空间中。发光二极管芯片设置于基板的第一表面上,其中发光二极管芯片表面上未直接覆盖一胶体,且发光二极管芯片与封装外壳彼此分离一距离。The light emitting diode package structure of the present invention includes a package shell, a fluorescent layer, a substrate and a light emitting diode chip. The packaging shell has accommodating space. The fluorescent layer is coated on one side of the packaging shell. The substrate is arranged in the containing space. The light emitting diode chip is arranged on the first surface of the substrate, wherein the surface of the light emitting diode chip is not directly covered with a colloid, and the light emitting diode chip and the packaging shell are separated from each other by a distance.

在本发明的一实施例中,上述的封装外壳包括一开口,基板通过开口设置于容置空间中,一密封元件设置于开口,用以密封基板及发光二极管芯片于容置空间中。In an embodiment of the present invention, the above-mentioned package housing includes an opening through which the substrate is disposed in the accommodating space, and a sealing element is disposed in the opening for sealing the substrate and the LED chip in the accommodating space.

在本发明的一实施例中,上述的发光二极管封装结构更包括一介质,设置于发光二极管芯片及荧光层之间,其中介质的折射率小于或等于1.2。In an embodiment of the present invention, the above LED packaging structure further includes a medium disposed between the LED chip and the fluorescent layer, wherein the refractive index of the medium is less than or equal to 1.2.

在本发明的一实施例中,上述的介质为空气。In an embodiment of the present invention, the above-mentioned medium is air.

在本发明的一实施例中,上述的连接器电性连接基板与发光二极管芯片,其中连接器设置于基板上并延伸于开口外。In an embodiment of the present invention, the above-mentioned connector is electrically connected to the substrate and the LED chip, wherein the connector is disposed on the substrate and extends out of the opening.

在本发明的一实施例中,上述的发光二极管封装结构更包括一导线模块形成于基板上,其中导线模块的二导线电性连接发光二极管芯片及连接器的二电极。In an embodiment of the present invention, the above LED package structure further includes a wire module formed on the substrate, wherein the two wires of the wire module are electrically connected to the LED chip and the two electrodes of the connector.

在本发明的一实施例中,上述的密封元件的材料包括塑胶、陶瓷以及环氧树脂(epoxy)中的任一种。In an embodiment of the present invention, the material of the sealing element includes any one of plastic, ceramic and epoxy.

在本发明的一实施例中,上述的基板为一透明基板。In an embodiment of the present invention, the aforementioned substrate is a transparent substrate.

在本发明的一实施例中,上述的透明基板的材料包括蓝宝石(Sapphire)、BK7、氟化镁(MgF2)、氮化铝(AlN)、石英(Quartz)、SF11、LaSFN9、NSF8、硒化锌(ZnSe)、B270、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(Polycarbonate,PC)、氟化钙(CaF2)、二氧化硅(SiO2)以及氧化铝(Al2O3)中的任一种。In an embodiment of the present invention, the above-mentioned transparent substrate materials include sapphire (Sapphire), BK7, magnesium fluoride (MgF 2 ), aluminum nitride (AlN), quartz (Quartz), SF11, LaSFN9, NSF8, selenium Zinc oxide (ZnSe), B270, polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), calcium fluoride (CaF 2 ), silicon dioxide (SiO 2 ) and aluminum oxide (Al 2 O 3 ) in any one.

在本发明的一实施例中,上述的基板具有一第二表面,此第二表面相对于第一表面,且第二表面上设置多个微结构。In an embodiment of the present invention, the above-mentioned substrate has a second surface, the second surface is opposite to the first surface, and a plurality of microstructures are disposed on the second surface.

在本发明的一实施例中,上述的这些微结构为方形微结构、圆形微结构、三角形微结构、六角形微结构、圆柱状微结构、圆锥状微结构以及多边形微结构的任一种。In an embodiment of the present invention, the above-mentioned microstructures are any of square microstructures, circular microstructures, triangular microstructures, hexagonal microstructures, cylindrical microstructures, conical microstructures and polygonal microstructures. .

在本发明的一实施例中,上述的发光二极管芯片倒置于基板上。In an embodiment of the present invention, the above-mentioned LED chips are placed upside down on the substrate.

在本发明的一实施例中,上述的发光二极管芯片的数量为多个,这些发光二极管芯片相互串联地、并联地或串并联地电性连接。In an embodiment of the present invention, there are multiple light emitting diode chips, and these light emitting diode chips are electrically connected to each other in series, in parallel or in series and parallel.

在本发明的一实施例中,上述的封装外壳包括一第一开口及一第二开口,基板通过第一开口及第二开口的其一设置于容置空间中。In an embodiment of the present invention, the above-mentioned package housing includes a first opening and a second opening, and the substrate is disposed in the accommodating space through one of the first opening and the second opening.

在本发明的一实施例中,上述的发光二极管封装结构更包括一第一连接器和一第二连接器,电性连接基板与发光二极管芯片,其中第一连接器和第二连接器设置于基板上并分别延伸于第一开口及第二开口外。In an embodiment of the present invention, the LED packaging structure above further includes a first connector and a second connector electrically connecting the substrate and the LED chip, wherein the first connector and the second connector are disposed on on the substrate and extend outside the first opening and the second opening respectively.

在本发明的一实施例中,上述的发光二极管封装结构更包括一导线模块,形成于基板上,其中导线模块的一导线电性连接发光二极管芯片及第一连接器的一电极,导线模块的另一导线电性连接发光二极管芯片及第二连接器的一电极。In an embodiment of the present invention, the LED packaging structure above further includes a wire module formed on the substrate, wherein a wire of the wire module is electrically connected to the LED chip and an electrode of the first connector, and a wire of the wire module is electrically connected to an electrode of the first connector. The other wire is electrically connected to the LED chip and an electrode of the second connector.

在本发明的一实施例中,上述的发光二极管封装结构更包括一第一结合元件和一第二结合元件,分别设置于第一开口和第二开口中,用以密封基板及发光二极管芯片于容置空间中。In an embodiment of the present invention, the above LED package structure further includes a first bonding element and a second bonding element respectively disposed in the first opening and the second opening for sealing the substrate and the LED chip in the in the accommodation space.

在本发明的一实施例中,上述的封装外壳的材料包括聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(Polycarbonate,PC)、二氧化硅(SiO2)、BK7以及玻璃(Glass)中的任一种。In an embodiment of the present invention, the material of the above-mentioned packaging shell includes polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), silicon dioxide (SiO 2 ), BK7 and glass (Glass) of any kind.

基于上述,由于本发明的实施例的发光二极管芯片表面上未直接覆盖一胶体,且发光二极管芯片与封装外壳彼此分离一距离,因而提高发光二极管封装结构的整体发光效能以及反射光线的均匀性。此外,凭借封装外壳及涂布于其一侧的荧光层的设置,使得发光二极管封装结构能提供全周光的发光角度。由于发光二极管封装结构能提供完整的全周光的发光角度,因此,发光二极管封装结构能够取代传统灯具,并达到无感应置换。Based on the above, since the surface of the LED chip of the embodiment of the present invention is not directly covered with a glue, and the LED chip and the packaging shell are separated by a distance, the overall luminous efficacy of the LED packaging structure and the uniformity of reflected light are improved. In addition, due to the arrangement of the package shell and the fluorescent layer coated on one side thereof, the package structure of the light emitting diode can provide a full-circle light emitting angle. Since the light emitting diode packaging structure can provide a complete full-circle light emitting angle, the light emitting diode packaging structure can replace traditional lamps and achieve non-inductive replacement.

本发明实施例相对于现有技术,目前来看的技术效果至少在于,上述实施例的发光二极管芯片表面上未直接覆盖一胶体,且发光二极管芯片与封装外壳彼此分离一距离D,因而提高发光二极管封装结构的整体发光效能以及反射光线的均匀性。此外,由于荧光层远离发热来源的发光二极管芯片,荧光层不直接接触发光二极管芯片,因而提高发光二极管封装结构的可靠度,也使得可适用于多个发光二极管芯片的发光二极管封装结构的制造成本,能大幅降低。再者,凭借封装外壳及涂布于其一侧之荧光层的设置,使得发光二极管封装结构能提供全周光的发光角度。由于发光二极管封装结构能提供完整的全周光的发光角度,因此,发光二极管封装结构能够取代传统灯具,并达到无感应置换。此外,涂布于封装外壳一侧的荧光层,可以使白光的混光更为均匀,改善了已知发光二极管封装结构于接近出光角度临界处出现的色偏等现象。Compared with the prior art, the embodiment of the present invention has at least the technical effect that the surface of the light-emitting diode chip of the above-mentioned embodiment is not directly covered with a colloid, and the light-emitting diode chip and the packaging shell are separated by a distance D, thereby improving the luminous The overall luminous efficacy of the diode package structure and the uniformity of reflected light. In addition, because the fluorescent layer is far away from the LED chip that generates heat, the fluorescent layer does not directly contact the LED chip, thus improving the reliability of the LED packaging structure and making the manufacturing cost of the LED packaging structure applicable to multiple LED chips , can be greatly reduced. Furthermore, by virtue of the package shell and the fluorescent layer coated on one side thereof, the package structure of the light emitting diode can provide a full-circle light emitting angle. Since the light emitting diode packaging structure can provide a complete full-circle light emitting angle, the light emitting diode packaging structure can replace traditional lamps and achieve non-inductive replacement. In addition, the fluorescent layer coated on one side of the packaging shell can make the light mixing of white light more uniform, and improve the phenomenon of color shift and other phenomena that occur near the critical point of the light emitting angle of the known light emitting diode packaging structure.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

附图说明Description of drawings

图1绘示为本发明的一实施例的一种发光二极管封装结构的剖视示意图。FIG. 1 is a schematic cross-sectional view of a light emitting diode packaging structure according to an embodiment of the present invention.

图2绘示为图1的发光二极管封装结构的侧视示意图。FIG. 2 is a schematic side view of the LED package structure in FIG. 1 .

图3绘示为本发明的一实施例的一种发光二极管封装结构的制造流程图。FIG. 3 is a flow chart showing a manufacturing process of a light emitting diode packaging structure according to an embodiment of the present invention.

图4绘示为本发明的另一实施例的一种发光二极管封装结构的剖视示意图。FIG. 4 is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention.

图5绘示为图4的发光二极管封装结构的侧视示意图。FIG. 5 is a schematic side view of the LED package structure shown in FIG. 4 .

图6绘示为本发明的另一实施例的一种发光二极管封装结构的剖视示意图。FIG. 6 is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention.

图7绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。FIG. 7 is a schematic side view of a light emitting diode package structure according to another embodiment of the present invention.

图8绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。FIG. 8 is a schematic side view of a light emitting diode packaging structure according to another embodiment of the present invention.

图9绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。FIG. 9 is a schematic side view of a light emitting diode package structure according to another embodiment of the present invention.

图10绘示为本发明的另一实施例的发光二极管芯片的排布示意图。FIG. 10 is a schematic diagram of an arrangement of LED chips according to another embodiment of the present invention.

符号说明Symbol Description

1、2、3:发光二极管封装结构1, 2, 3: LED packaging structure

10:封装外壳10: Encapsulation shell

101:容置空间101: Accommodating space

102:开口102: opening

103:第一开口103: First opening

104:第二开口104: Second opening

20:荧光层20: fluorescent layer

30:基板30: Substrate

301:第一表面301: First Surface

302:第二表面302: second surface

40、41、42、43、44:发光二极管芯片40, 41, 42, 43, 44: LED chips

45、46:发光二极管芯片组45, 46: LED chipset

D:距离D: distance

50:连接器50: connector

51:第一连接器51: First connector

52:第二连接器52: Second connector

60:导线模块60: wire module

601、602、603、604、605:导线601, 602, 603, 604, 605: wire

70:密封元件70: sealing element

71:第一结合元件71: first binding element

72:第二结合元件72: Second binding element

80:介质80: Medium

90:微结构90: Microstructure

具体实施方式detailed description

图1绘示为本发明的一实施例的一种发光二极管封装结构的剖视示意图。图2绘示为图1的发光二极管封装结构的侧视示意图。请参考图1及图2,在本实施例中,发光二极管封装结构1包括一封装外壳10、一荧光层20、一基板30以及一发光二极管芯片40。封装外壳10具有一容置空间101。荧光层20涂布于封装外壳10一侧。基板30设置于容置空间101中。发光二极管芯片40设置于基板30的一第一表面301上且与荧光层20彼此分离一距离D。FIG. 1 is a schematic cross-sectional view of a light emitting diode packaging structure according to an embodiment of the present invention. FIG. 2 is a schematic side view of the LED package structure in FIG. 1 . Please refer to FIG. 1 and FIG. 2 , in the present embodiment, the LED package structure 1 includes a package shell 10 , a fluorescent layer 20 , a substrate 30 and a LED chip 40 . The packaging case 10 has an accommodating space 101 . The fluorescent layer 20 is coated on one side of the packaging shell 10 . The substrate 30 is disposed in the containing space 101 . The LED chip 40 is disposed on a first surface 301 of the substrate 30 and separated from the fluorescent layer 20 by a distance D.

详细来说,在本实施例中,封装外壳10的材料包括聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(Polycarbonate,PC)、二氧化硅(SiO2)、BK7以及玻璃(Glass)中的任一种。封装外壳10包括一开口102,基板30通过开口102设置于容置空间101中。In detail, in this embodiment, the material of the packaging shell 10 includes polymethyl methacrylate (PMMA), polycarbonate (Polycarbonate, PC), silicon dioxide (SiO 2 ), BK7 and glass (Glass) of any kind. The packaging case 10 includes an opening 102 , and the substrate 30 is disposed in the accommodating space 101 through the opening 102 .

在本实施例中,基板具有第一表面301和第二表面302,第二表面302相对于第一表面301。基板30可为一透明基板,其第一表面301用来承载发光二极管芯片40。透明基板的材料包括蓝宝石(Sapphire)、BK7、氟化镁(MgF2)、氮化铝(AlN)、石英(Quartz)、SF11、LaSFN9、NSF8、硒化锌(ZnSe)、B270、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(Polycarbonate,PC)、氟化钙(CaF2)、二氧化硅(SiO2)以及氧化铝(Al2O3)中的任一种。In this embodiment, the substrate has a first surface 301 and a second surface 302 , and the second surface 302 is opposite to the first surface 301 . The substrate 30 can be a transparent substrate, the first surface 301 of which is used to carry the LED chips 40 . Transparent substrate materials include sapphire (Sapphire), BK7, magnesium fluoride (MgF 2 ), aluminum nitride (AlN), quartz (Quartz), SF11, LaSFN9, NSF8, zinc selenide (ZnSe), B270, polymethyl Any one of methyl acrylate (PMMA), polycarbonate (Polycarbonate, PC), calcium fluoride (CaF 2 ), silicon dioxide (SiO 2 ), and aluminum oxide (Al 2 O 3 ).

发光二极管芯片40的数量可为多个,这些发光二极管芯片40相互串联地、并联地或串并联地电性连接。在本实施例中,这些发光二极管芯片40相互串联地电性连接,但本发明不限于此。发光二极管芯片40的发光主波长介于大于或等于400纳米至小于或等于700纳米的范围。荧光层20涂布于封装外壳10的内表面上,且荧光层20的发光波长介于大于或等于400纳米至小于或等于700纳米的范围。The number of LED chips 40 may be multiple, and these LED chips 40 are electrically connected in series, in parallel or in series and parallel. In this embodiment, the LED chips 40 are electrically connected in series, but the invention is not limited thereto. The dominant wavelength of light emitted by the LED chip 40 ranges from greater than or equal to 400 nm to less than or equal to 700 nm. The phosphor layer 20 is coated on the inner surface of the package shell 10 , and the emission wavelength of the phosphor layer 20 is within a range of greater than or equal to 400 nm to less than or equal to 700 nm.

本实施例的发光二极管封装结构1更包括一连接器50、一导线模块60、一密封元件70以及一介质80。连接器50电性连接基板30与发光二极管芯片40,其中连接器50设置于基板30上并延伸于封装外壳10的开口102外。在一实施例中,开口102设置于封装外壳10的一端上。导线模块60形成于基板30上,其中导线模块60的二导线601、602电性连接发光二极管芯片40及连接器50的二电极。密封元件70设置于开口102中,用以密封基板30及发光二极管芯片40于容置空间101中,以保护基板30及发光二极管芯片40不受外界水气的侵害。密封元件70的密封防护能完全隔绝水气。密封元件70的材料包括塑胶、陶瓷以及环氧树脂(epoxy)中的任一种。介质80设置于发光二极管芯片40及荧光层20之间,其中介质80的折射率小于或等于1.2。在一实施例中,介质80为空气。The LED package structure 1 of this embodiment further includes a connector 50 , a wire module 60 , a sealing element 70 and a medium 80 . The connector 50 is electrically connected to the substrate 30 and the LED chip 40 , wherein the connector 50 is disposed on the substrate 30 and extends outside the opening 102 of the packaging case 10 . In one embodiment, the opening 102 is disposed on one end of the packaging case 10 . The wire module 60 is formed on the substrate 30 , wherein the two wires 601 and 602 of the wire module 60 are electrically connected to the LED chip 40 and the two electrodes of the connector 50 . The sealing element 70 is disposed in the opening 102 for sealing the substrate 30 and the LED chip 40 in the accommodating space 101 to protect the substrate 30 and the LED chip 40 from external moisture. The sealing protection of the sealing element 70 can completely isolate water vapor. The material of the sealing element 70 includes any one of plastic, ceramic and epoxy. The medium 80 is disposed between the LED chip 40 and the fluorescent layer 20 , wherein the refractive index of the medium 80 is less than or equal to 1.2. In one embodiment, medium 80 is air.

此外,请参考图2,在本实施例中,当通过电流使发光二极管芯片40运作后,发光二极管芯片40用以发出光线L,当光线L经过涂布在封装外壳10一侧的荧光层20时,由于发光二极管芯片40表面上未直接覆盖一胶体,且发光二极管芯片40与封装外壳10彼此分离一距离D,因而提高发光二极管封装结构1的整体发光效能以及反射光线的均匀性。此外,由于荧光层20远离发热来源的发光二极管芯片40,荧光层20不直接接触发光二极管芯片40,因而提高发光二极管封装结构1的可靠度,也使得可适用于多个发光二极管芯片40的发光二极管封装结构1的制造成本,能大幅降低。再者,凭借封装外壳10及涂布于其一侧的荧光层20的设置,使发光二极管芯片40所发出的光线L与荧光层20反应转换成白光,并使得发光二极管封装结构1能提供360度的全周光发光角度的白光发光二极管芯片40。由于发光二极管封装结构1能提供完整的全周光的发光角度,因此,发光二极管封装结构1能够取代传统灯具,并达到无感应置换。此外,涂布于封装外壳10一侧的荧光层20,可以使白光的混光更为均匀,改善了已知发光二极管封装结构于接近出光角度临界处出现的色偏等现象。In addition, please refer to FIG. 2 , in this embodiment, when the light-emitting diode chip 40 is operated by passing an electric current, the light-emitting diode chip 40 is used to emit light L. At this time, since the surface of the LED chip 40 is not directly covered with a colloid, and the LED chip 40 and the packaging shell 10 are separated by a distance D, the overall luminous efficacy of the LED packaging structure 1 and the uniformity of reflected light are improved. In addition, since the fluorescent layer 20 is far away from the light-emitting diode chip 40 of the heat source, the fluorescent layer 20 does not directly contact the light-emitting diode chip 40, thereby improving the reliability of the light-emitting diode packaging structure 1 and making it applicable to the light emission of multiple light-emitting diode chips 40 The manufacturing cost of the diode package structure 1 can be greatly reduced. Furthermore, by means of the package shell 10 and the fluorescent layer 20 coated on one side thereof, the light L emitted by the light emitting diode chip 40 reacts with the fluorescent layer 20 to be converted into white light, and the light emitting diode package structure 1 can provide 360 A white light emitting diode chip 40 with a full-circle light emitting angle of 100 degrees. Since the light emitting diode packaging structure 1 can provide a complete full-circle light emitting angle, the light emitting diode packaging structure 1 can replace traditional lamps and achieve non-inductive replacement. In addition, the fluorescent layer 20 coated on one side of the packaging shell 10 can make the white light mix more uniform, and improve the phenomenon of color shift and the like that occur near the critical point of light emitting angle in the known LED packaging structure.

图3绘示为本发明的一实施例的一种发光二极管封装结构的制造流程图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。请参考图1至图3,在本实施例中,发光二极管封装结构1的制造流程说明如下,于步骤(1)中,首先,提供基板30。于步骤(2)中,接着,将发光二极管芯片40设置于基板30的第一表面301上。于步骤(3)中,将荧光层20涂布于封装外壳10一侧。于步骤(4)中,将基板30设置于封装外壳10的容置空间101中,其中发光二极管芯片40表面上未直接覆盖一胶体,且发光二极管芯片40与封装外壳10彼此分离一距离D,因而提高发光二极管封装结构1的整体发光效能以及反射光线的均匀性。。在另一实施例中,步骤(1)及步骤(3)可以互换,意即先进行步骤(3)、接着步骤(2)、接着步骤(1)以及接着步骤(4)。FIG. 3 is a flow chart showing a manufacturing process of a light emitting diode packaging structure according to an embodiment of the present invention. The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated. Please refer to FIG. 1 to FIG. 3 . In this embodiment, the manufacturing process of the LED package structure 1 is described as follows. In step (1), firstly, a substrate 30 is provided. In step (2), then, the LED chip 40 is disposed on the first surface 301 of the substrate 30 . In step (3), the fluorescent layer 20 is coated on one side of the packaging shell 10 . In step (4), the substrate 30 is placed in the accommodating space 101 of the packaging case 10, wherein the surface of the light-emitting diode chip 40 is not directly covered with a glue, and the light-emitting diode chip 40 and the packaging case 10 are separated by a distance D, Therefore, the overall luminous efficiency of the LED package structure 1 and the uniformity of reflected light are improved. . In another embodiment, step (1) and step (3) can be interchanged, that is, step (3) is performed first, then step (2), then step (1) and then step (4).

详细来说,在一实施例中,于步骤(2)中,可以利用固晶机台把多个发光二极管芯片40附着于基板30上。此外,在一实施例中,在步骤(1)之后以及步骤(4)之前更可进行步骤(a1),于步骤(a1)中,于基板30上制作导线模块60的导线601。导线601的制作方式可以用印刷、电镀、真空电镀或化学电镀方式进行,或者也可以用半导体的黄光微影制程、真空蒸镀、蚀刻或去膜制程完成微细线路制程,以做精密的固晶制程。于步骤(a1)之后,接着进行步骤(a2),于步骤(a2)中,提供连接器50,并将连接器50设置于基板30上以与外部电源连接。In detail, in one embodiment, in step (2), a plurality of LED chips 40 can be attached to the substrate 30 by using a die bonding machine. In addition, in one embodiment, step (a1) may be performed after step (1) and before step (4). In step (a1), the wire 601 of the wire module 60 is fabricated on the substrate 30 . The production method of the wire 601 can be carried out by printing, electroplating, vacuum electroplating or chemical electroplating, or it can also use semiconductor yellow light lithography process, vacuum evaporation, etching or film removal process to complete the fine line process for precise crystal bonding process . After the step (a1), proceed to the step (a2). In the step (a2), the connector 50 is provided, and the connector 50 is disposed on the substrate 30 to be connected to an external power source.

此外,在步骤(2)之后更可进行步骤(b),于步骤(b)中,利用打线(wirebonding)制程以导线603把多个发光二极管芯片40连接。在一实施例中,导线603可为金线材或是铝线材,且导线603可将多个发光二极管芯片40作不同的串并的连接,其连接方式可依据不同的使用条件做调整。于一实施例中,更可以在步骤(b)以及步骤(a2)之后进行步骤(c),于步骤(c)中,利用打线制程以导线602连接连接器,以导线604连接导线601。在步骤(4)之后更可进行步骤(5),于步骤(5)中,提供密封元件70以密封基板30及发光二极管芯片40于容置空间101中,以保护基板30及发光二极管芯片40不受外界水气的侵害。密封元件70的密封防护能完全隔绝水气。封装外壳10及密封元件70的设置,也保护发光二极管芯片40以避免有触碰发光二极管芯片40的风险,因此本实施例的发光二极管封装结构1不需要设置已知的封装胶来覆盖发光二极管芯片40,从而本实施例解决了已知因封装胶而造成发光二极管封装结构散热不易、光源指向性及面光源等问题。In addition, step (b) can be performed after step (2). In step (b), a plurality of LED chips 40 are connected with wires 603 through a wire bonding process. In one embodiment, the wire 603 can be a gold wire or an aluminum wire, and the wire 603 can connect a plurality of LED chips 40 in different series and parallel, and the connection method can be adjusted according to different usage conditions. In one embodiment, step (c) can be performed after step (b) and step (a2). In step (c), wire bonding process is used to connect the connector with wire 602 and connect wire 601 with wire 604 . Step (5) can be carried out after step (4). In step (5), a sealing element 70 is provided to seal the substrate 30 and the LED chip 40 in the accommodating space 101 to protect the substrate 30 and the LED chip 40 Not affected by external moisture. The sealing protection of the sealing element 70 can completely isolate water vapor. The arrangement of the packaging shell 10 and the sealing element 70 also protects the light emitting diode chip 40 from the risk of touching the light emitting diode chip 40, so the light emitting diode packaging structure 1 of this embodiment does not need to be provided with known encapsulant to cover the light emitting diode chip 40 , so this embodiment solves the known problems such as poor heat dissipation of the LED packaging structure, directivity of the light source and surface light source caused by the packaging glue.

图4绘示为本发明的另一实施例的一种发光二极管封装结构的剖视示意图。图5绘示为图4的发光二极管封装结构的侧视示意图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。请同时参考图4与图5,本实施例的发光二极管封装结构2与前述实施例的发光二极管封装结构1主要的差异是在于发光二极管芯片40倒置于基板30上。详细而言,在基板40上进行回路导线的制作过程,此导线回路会定义发光二极管芯片40的串并方式,且倒置的发光二极管芯片40利用线路进行连接发光。利用倒晶置放的封装制程,将发光二极管芯片40倒置于基板30上方,利用此制程可以解决已知技术中利用固晶胶体来固定发光二极管与基板后,固晶胶会有蓄热的问题。本实施例,凭借发光二极管芯片40倒置于基板30上的设计让发光二极管芯片40的散热能力更快,发光效率更好以及更佳的寿命表现。FIG. 4 is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention. FIG. 5 is a schematic side view of the LED package structure shown in FIG. 4 . The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated. Please refer to FIG. 4 and FIG. 5 at the same time. The main difference between the LED packaging structure 2 of this embodiment and the LED packaging structure 1 of the previous embodiment is that the LED chip 40 is placed on the substrate 30 upside down. In detail, the process of making loop wires is carried out on the substrate 40 , the wire loops will define the serial-parallel mode of the LED chips 40 , and the inverted LED chips 40 are connected to emit light by wires. Using the packaging process of flip-chip placement, the light-emitting diode chip 40 is placed upside down on the substrate 30. This process can solve the problem of heat storage in the die-bonding glue in the known technology after using the die-bonding glue to fix the light-emitting diode and the substrate. . In this embodiment, the light-emitting diode chip 40 is designed to be placed upside down on the substrate 30 so that the heat dissipation capability of the light-emitting diode chip 40 is faster, the luminous efficiency is better, and the lifetime performance is better.

图6绘示为本发明的另一实施例的一种发光二极管封装结构的剖视示意图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。请参考图6,本实施例的发光二极管封装结构3与前述实施例的发光二极管封装结构1主要的差异是在于封装外壳10包括一第一开口103及一第二开口104,基板30通过第一开口103及第二开口104的其一设置于容置空间101中。在一实施例中,第一开口103与第二开口104可分别设置于封装外壳10的相对二端上,但本发明不限于此。第一连接器51和第二连接器52电性连接基板30与发光二极管芯片40,其中第一连接器51和第二连接器52设置于基板30上并分别延伸于第一开口103及第二开口104外。导线模块60,形成于基板30上,其中导线模块60的一导线602电性连接发光二极管芯片40及第一连接器51的一电极,导线模块60的另一导线605电性连接发光二极管芯片40及第二连接器52的一电极。在本实施例中,第一连接器51和第二连接器52例如为直流电源,第一连接器51和第二连接器52的电极例如分别为直流电源的正负极或负正极。凭借本实施例的上述两端连接方式而使发光二极管芯片40与直流电源的正负两极相连发光,使得发光二极管封装结构3可以有更多的变化与便利性。一第一结合元件71和一第二结合元件72,分别设置于第一开口103和第二开口104中,用以密封基板30及发光二极管芯片40于容置空间101中,以保护基板30及发光二极管芯片40不受外界水气的侵害。第一结合元件71和第二结合元件72的密封防护能完全隔绝水气。封装外壳10、第一结合元件71和第二结合元件72的设置,也保护发光二极管芯片40以避免有触碰发光二极管芯片40的风险,因此本实施例的发光二极管封装结构3不需要设置已知的封装胶来覆盖发光二极管芯片40,从而本实施例解决了已知因封装胶而造成发光二极管封装结构散热不易、光源指向性及面光源等问题。FIG. 6 is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention. The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated. Please refer to FIG. 6 , the main difference between the light emitting diode packaging structure 3 of this embodiment and the light emitting diode packaging structure 1 of the previous embodiment is that the packaging shell 10 includes a first opening 103 and a second opening 104, and the substrate 30 passes through the first opening 104. One of the opening 103 and the second opening 104 is disposed in the accommodating space 101 . In one embodiment, the first opening 103 and the second opening 104 may be respectively disposed on two opposite ends of the packaging case 10 , but the invention is not limited thereto. The first connector 51 and the second connector 52 are electrically connected to the substrate 30 and the light emitting diode chip 40, wherein the first connector 51 and the second connector 52 are disposed on the substrate 30 and respectively extend to the first opening 103 and the second outside the opening 104 . The wire module 60 is formed on the substrate 30, wherein a wire 602 of the wire module 60 is electrically connected to the LED chip 40 and an electrode of the first connector 51, and another wire 605 of the wire module 60 is electrically connected to the LED chip 40 and an electrode of the second connector 52 . In this embodiment, the first connector 51 and the second connector 52 are, for example, a DC power supply, and the electrodes of the first connector 51 and the second connector 52 are, for example, positive and negative poles or negative and positive poles of the DC power supply, respectively. The light-emitting diode chip 40 is connected to the positive and negative poles of the DC power supply to emit light by means of the above-mentioned two-terminal connection method of this embodiment, so that the light-emitting diode packaging structure 3 can have more changes and convenience. A first combining element 71 and a second combining element 72 are arranged in the first opening 103 and the second opening 104 respectively, and are used to seal the substrate 30 and the LED chip 40 in the accommodation space 101, so as to protect the substrate 30 and the second opening 104. The light emitting diode chip 40 is not damaged by external moisture. The sealing protection of the first combining element 71 and the second combining element 72 can completely isolate moisture. The arrangement of the packaging shell 10, the first combination element 71 and the second combination element 72 also protects the light emitting diode chip 40 from the risk of touching the light emitting diode chip 40, so the light emitting diode packaging structure 3 of this embodiment does not need to be provided with The known encapsulation glue is used to cover the light emitting diode chip 40, so this embodiment solves the known problems of heat dissipation of the light emitting diode packaging structure, light source directivity and surface light source caused by the known encapsulation glue.

图7绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。图8绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。图9绘示为本发明的另一实施例的一种发光二极管封装结构的侧视示意图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。请参考图7、图8及图9,基板30的第二表面上设置多个微结构90。这些微结构90可为方形微结构(如图7)、圆形微结构(如图8)、三角形微结构(如图8)、六角形微结构、圆柱状微结构、圆锥状微结构以及多边形微结构的任一种。这些微结构90的分布可为周期性排列。当光线L经过不同材料时,因为两种材料的折射值不同,会有出光角度的问题,当大于此出光角度时,光线L会被局限在材料内部,要把光导引出材料内部,需要在出光面至做不同的平面,以利光线L的逃出。凭借这些微结构90的设置,改变光线L在穿过基板30时所面临的临界角问题,可以增加出光效率以及混光效率。FIG. 7 is a schematic side view of a light emitting diode package structure according to another embodiment of the present invention. FIG. 8 is a schematic side view of a light emitting diode packaging structure according to another embodiment of the present invention. FIG. 9 is a schematic side view of a light emitting diode package structure according to another embodiment of the present invention. The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated. Referring to FIG. 7 , FIG. 8 and FIG. 9 , a plurality of microstructures 90 are disposed on the second surface of the substrate 30 . These microstructures 90 can be square microstructures (as shown in Figure 7), circular microstructures (as in Figure 8), triangular microstructures (as in Figure 8), hexagonal microstructures, cylindrical microstructures, conical microstructures and polygonal microstructures. Any kind of microstructure. The distribution of these microstructures 90 can be arranged periodically. When the light L passes through different materials, because the refraction values of the two materials are different, there will be a problem with the light exit angle. When the light exit angle is greater than this, the light L will be limited inside the material. Make different planes to facilitate the escape of light L. With the arrangement of these microstructures 90, changing the critical angle problem faced by the light L when passing through the substrate 30 can increase the light extraction efficiency and light mixing efficiency.

图10绘示为本发明的另一实施例的发光二极管芯片的排布示意图。在本实施例中,发光二极管芯片相互串并联地电性连接,但本发明不限于此。在其他实施例中,发光二极管芯片可以相互串联地或并联地电性连接。详细而言,在本实施例中,发光二极管芯片41及42相互串联并形成一发光二极管芯片组45,发光二极管芯片43及44相互串联并形成一发光二极管芯片组46,发光二极管芯片组45及46相互并联。凭借发光二极管芯片的串联、并联或串并联,使发光二极管封装结构可以有更多在设计需求上的变化与便利性。FIG. 10 is a schematic diagram of an arrangement of LED chips according to another embodiment of the present invention. In this embodiment, the LED chips are electrically connected in series and parallel, but the invention is not limited thereto. In other embodiments, the LED chips can be electrically connected to each other in series or in parallel. Specifically, in this embodiment, the LED chips 41 and 42 are connected in series to form a LED chip group 45, the LED chips 43 and 44 are connected in series to form a LED chip group 46, and the LED chip group 45 and 46 are connected in parallel with each other. By virtue of the serial connection, parallel connection or series-parallel connection of the light emitting diode chips, the packaging structure of the light emitting diode can have more changes and convenience in terms of design requirements.

综上所述,上述实施例的发光二极管芯片40表面上未直接覆盖一胶体,且发光二极管芯片40与封装外壳10彼此分离一距离D,因而提高发光二极管封装结构1的整体发光效能以及反射光线的均匀性。此外,由于荧光层20远离发热来源的发光二极管芯片40,荧光层20不直接接触发光二极管芯片40,因而提高发光二极管封装结构1的可靠度,也使得可适用于多个发光二极管芯片40的发光二极管封装结构1的制造成本,能大幅降低。再者,凭借封装外壳10及涂布于其一侧之荧光层20的设置,使得发光二极管封装结构1能提供全周光的发光角度。由于发光二极管封装结构1能提供完整的全周光的发光角度,因此,发光二极管封装结构1能够取代传统灯具,并达到无感应置换。此外,涂布于封装外壳10一侧的荧光层20,可以使白光的混光更为均匀,改善了已知发光二极管封装结构于接近出光角度临界处出现的色偏等现象。In summary, the surface of the LED chip 40 in the above embodiment is not directly covered with a glue, and the LED chip 40 and the packaging shell 10 are separated by a distance D, thus improving the overall luminous efficacy and reflected light of the LED packaging structure 1 uniformity. In addition, since the fluorescent layer 20 is far away from the light-emitting diode chip 40 of the heat source, the fluorescent layer 20 does not directly contact the light-emitting diode chip 40, thereby improving the reliability of the light-emitting diode packaging structure 1 and making it applicable to the light emission of multiple light-emitting diode chips 40 The manufacturing cost of the diode package structure 1 can be greatly reduced. Furthermore, by virtue of the packaging shell 10 and the fluorescent layer 20 coated on one side thereof, the LED packaging structure 1 can provide a full-circle light emitting angle. Since the light emitting diode packaging structure 1 can provide a complete full-circle light emitting angle, the light emitting diode packaging structure 1 can replace traditional lamps and achieve non-inductive replacement. In addition, the fluorescent layer 20 coated on one side of the packaging shell 10 can make the white light mix more uniform, and improve the phenomenon of color shift and the like that occur near the critical point of light emitting angle in the known LED packaging structure.

虽然本发明已以实施例揭露如上,然其并非用以限定本发明,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视后附的申请专利范围所界定者为准。Although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

Claims (17)

1.一种发光二极管封装结构,其特征在于,包括:1. A light-emitting diode packaging structure, characterized in that, comprising: 一封装外壳,具有一容置空间;An encapsulating shell with an accommodating space; 一荧光层,涂布于该封装外壳一侧;a fluorescent layer coated on one side of the packaging shell; 一基板,设置于该容置空间中;以及a substrate disposed in the accommodating space; and 一发光二极管芯片,设置于该基板的一第一表面上,其中该发光二极管芯片表面上未直接覆盖一胶体,且该发光二极管芯片与该封装外壳彼此分离一距离。A light-emitting diode chip is arranged on a first surface of the substrate, wherein the surface of the light-emitting diode chip is not directly covered with a colloid, and the light-emitting diode chip and the packaging shell are separated by a distance. 2.如权利要求1所述的发光二极管封装结构,其特征在于,该封装外壳包括一开口,该基板通过该开口设置于该容置空间中,一密封元件,设置于该开口,用以密封该基板及该发光二极管芯片于该容置空间中。2. The light-emitting diode packaging structure according to claim 1, wherein the package housing includes an opening, the substrate is disposed in the accommodating space through the opening, and a sealing element is disposed in the opening for sealing The substrate and the light-emitting diode chip are in the accommodating space. 3.如权利要求2所述的发光二极管封装结构,其特征在于,更包括一介质,设置于该发光二极管芯片及该荧光层之间,其中该介质的折射率小于或等于1.2。3 . The LED packaging structure according to claim 2 , further comprising a medium disposed between the LED chip and the fluorescent layer, wherein the refractive index of the medium is less than or equal to 1.2. 4.如权利要求3所述的发光二极管封装结构,其特征在于,该介质为空气。4. The LED packaging structure according to claim 3, wherein the medium is air. 5.如权利要求2所述的发光二极管封装结构,其特征在于,更包括一连接器,电性连接该基板与该发光二极管芯片,其中该连接器设置于该基板上并延伸于该开口外。5. The light emitting diode packaging structure according to claim 2, further comprising a connector electrically connecting the substrate and the light emitting diode chip, wherein the connector is disposed on the substrate and extends outside the opening . 6.如权利要求5所述的发光二极管封装结构,其特征在于,更包括一导线模块,形成于该基板上,其中该导线模块的二导线电性连接该发光二极管芯片及该连接器的二电极。6. The light emitting diode packaging structure according to claim 5, further comprising a wire module formed on the substrate, wherein the two wires of the wire module are electrically connected to the light emitting diode chip and the two connectors. electrode. 7.如权利要求2所述的发光二极管封装结构,其特征在于,该密封元件的材料包括塑胶、陶瓷以及环氧树脂中的任一种。7. The LED package structure according to claim 2, wherein the material of the sealing element comprises any one of plastic, ceramic and epoxy resin. 8.如权利要求1所述的发光二极管封装结构,其特征在于,该基板为一透明基板。8. The LED packaging structure according to claim 1, wherein the substrate is a transparent substrate. 9.如权利要求8所述的发光二极管封装结构,其特征在于,该透明基板的材料包括蓝宝石、BK7、氟化镁、氮化铝、石英、SF11、LaSFN9、NSF8、硒化锌、B270、聚甲基丙烯酸甲酯、聚碳酸酯、氟化钙、二氧化硅以及氧化铝中的任一种。9. The LED packaging structure according to claim 8, wherein the material of the transparent substrate comprises sapphire, BK7, magnesium fluoride, aluminum nitride, quartz, SF11, LaSFN9, NSF8, zinc selenide, B270, Any of polymethyl methacrylate, polycarbonate, calcium fluoride, silica, and alumina. 10.如权利要求8所述的发光二极管封装结构,其特征在于,该基板具有一第二表面,该第二表面相对于该第一表面,且该第二表面上设置多个微结构。10 . The light emitting diode packaging structure according to claim 8 , wherein the substrate has a second surface, the second surface is opposite to the first surface, and a plurality of microstructures are disposed on the second surface. 11 . 11.如权利要求10所述的发光二极管封装结构,其特征在于,所述多个微结构为方形微结构、圆形微结构、三角形微结构、六角形微结构、圆柱状微结构、圆锥状微结构以及多边形微结构的任一种。11. The LED packaging structure according to claim 10, wherein the plurality of microstructures are square microstructures, circular microstructures, triangular microstructures, hexagonal microstructures, cylindrical microstructures, conical microstructures Any of microstructures and polygonal microstructures. 12.如权利要求1所述的发光二极管封装结构,其特征在于,该发光二极管芯片倒置于该基板上。12. The LED package structure according to claim 1, wherein the LED chip is placed upside down on the substrate. 13.如权利要求1所述的发光二极管封装结构,其特征在于,该发光二极管芯片的数量为多个,所述多个发光二极管芯片相互串联地、并联地或串并联地电性连接。13 . The LED packaging structure according to claim 1 , wherein there are multiple LED chips, and the multiple LED chips are electrically connected in series, in parallel or in series and parallel. 14.如权利要求1所述的发光二极管封装结构,其特征在于,该封装外壳包括一第一开口及一第二开口,该基板通过该第一开口及该第二开口的其一设置于该容置空间中。14. The light emitting diode package structure according to claim 1, wherein the package housing comprises a first opening and a second opening, and the substrate is disposed on the substrate through one of the first opening and the second opening. in the accommodation space. 15.如权利要求14所述的发光二极管封装结构,其特征在于,更包括一第一连接器和一第二连接器,电性连接该基板与该发光二极管芯片,其中该第一连接器和该第二连接器设置于该基板上并分别延伸于该第一开口及该第二开口外。15. The light emitting diode packaging structure according to claim 14, further comprising a first connector and a second connector electrically connecting the substrate and the light emitting diode chip, wherein the first connector and the The second connector is disposed on the substrate and extends outside the first opening and the second opening respectively. 16.如权利要求14所述的发光二极管封装结构,其特征在于,更包括一第一结合元件和一第二结合元件,分别设置于该第一开口和该第二开口中,用以密封该基板及该发光二极管芯片于该容置空间中。16. The light emitting diode packaging structure according to claim 14, further comprising a first bonding element and a second bonding element respectively disposed in the first opening and the second opening for sealing the The substrate and the light-emitting diode chip are in the accommodating space. 17.如权利要求1所述的发光二极管封装结构,其特征在于,其中该封装外壳的材料包括聚甲基丙烯酸甲酯、聚碳酸酯、二氧化硅、BK7以及玻璃中的任一种。17. The light emitting diode package structure according to claim 1, wherein the material of the package shell comprises any one of polymethyl methacrylate, polycarbonate, silicon dioxide, BK7 and glass.
CN201510282588.9A 2014-06-03 2015-05-28 Light emitting diode packaging structure Expired - Fee Related CN105322077B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW103119297A TW201547059A (en) 2014-06-03 2014-06-03 Light emitting diode package structure
TW103119297 2014-06-03

Publications (2)

Publication Number Publication Date
CN105322077A true CN105322077A (en) 2016-02-10
CN105322077B CN105322077B (en) 2019-03-12

Family

ID=54702782

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510282588.9A Expired - Fee Related CN105322077B (en) 2014-06-03 2015-05-28 Light emitting diode packaging structure

Country Status (3)

Country Link
US (1) US20150349216A1 (en)
CN (1) CN105322077B (en)
TW (1) TW201547059A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD786458S1 (en) * 2014-08-07 2017-05-09 Epistar Corporation Light emitting diode filament
TWI581464B (en) * 2015-12-29 2017-05-01 Low light attenuation high rate photoconductor module
TWI661550B (en) * 2017-10-18 2019-06-01 李宜臻 Flexible light emitting diode (led) filament and the combination thereof
CN110246932A (en) * 2018-03-09 2019-09-17 深圳市聚能达业光电科技有限公司 A kind of ceramic specular aluminium COB bracket and production method of LED encapsulation linear light source
CN109382289B (en) * 2018-10-17 2021-09-17 苏州扬子江新型材料股份有限公司 High-weather-resistance chameleon color-coated sheet and preparation method thereof
CN109754719B (en) * 2019-02-18 2024-02-06 深圳市梓桥科技有限公司 Sealing structure of underwater display screen and assembling and sealing process thereof
CN112736071A (en) * 2019-10-29 2021-04-30 深圳第三代半导体研究院 High-power chip embedded packaging heat dissipation structure and preparation method thereof
CN114068768A (en) * 2020-07-31 2022-02-18 广西东科视创光电科技有限公司 LED packaging process and deep ultraviolet LED

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1503382A (en) * 2002-11-25 2004-06-09 ���µ�����ҵ��ʽ���� Light-emitting diode lighting source
US20090045345A1 (en) * 2004-09-22 2009-02-19 Commissariat A Lenergie Atomique Electromagnetic and particle detector with reduced number of connections
CN102454907A (en) * 2010-11-03 2012-05-16 台湾积体电路制造股份有限公司 Light-emitting diode lamp and method of making
US20130050979A1 (en) * 2011-08-26 2013-02-28 Antony P. Van de Ven Reduced phosphor lighting devices
CN103367617A (en) * 2012-04-02 2013-10-23 Jds尤尼弗思公司 Broadband dielectric reflectors for LED

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2335878T3 (en) * 2002-08-30 2010-04-06 Lumination, Llc COVERED LED WITH IMPROVED EFFECTIVENESS.
TWI357886B (en) * 2007-08-13 2012-02-11 Epistar Corp Stamp having nanometer scale structure and applica
US9099626B2 (en) * 2012-04-02 2015-08-04 Jds Uniphase Corporation Broadband dielectric reflectors for LED

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1503382A (en) * 2002-11-25 2004-06-09 ���µ�����ҵ��ʽ���� Light-emitting diode lighting source
US20090045345A1 (en) * 2004-09-22 2009-02-19 Commissariat A Lenergie Atomique Electromagnetic and particle detector with reduced number of connections
CN102454907A (en) * 2010-11-03 2012-05-16 台湾积体电路制造股份有限公司 Light-emitting diode lamp and method of making
US20130050979A1 (en) * 2011-08-26 2013-02-28 Antony P. Van de Ven Reduced phosphor lighting devices
CN103367617A (en) * 2012-04-02 2013-10-23 Jds尤尼弗思公司 Broadband dielectric reflectors for LED

Also Published As

Publication number Publication date
CN105322077B (en) 2019-03-12
TW201547059A (en) 2015-12-16
US20150349216A1 (en) 2015-12-03

Similar Documents

Publication Publication Date Title
CN105322077A (en) Light emitting diode packaging structure
KR101251821B1 (en) Light emitting device package
CN102738367B (en) Luminaire
TWI613391B (en) Light-emitting diode assembly and light-emitting diode bulb using the same
CN104425476A (en) Flexible light emitting diode assembly and light emitting diode bulb
CN201539737U (en) LED lamp
CN102651444A (en) Light emitting diode packaging structure
CN102891242A (en) LED (Light-Emitting Diode) package device
CN103050615B (en) A kind of White LED with high color rendering property device
CN101859759A (en) A white LED light source package
US8536593B2 (en) LED device having two LED dies separated by a dam
CN105822909A (en) Ultraviolet filament lamp
JP2007220737A (en) Light emitting device
CN102637810A (en) LED (light-emitting diode) packaging structure and packaging molding method
TWI464915B (en) Coated diffuser cap for led illumination device
CN104157637A (en) MCOB LED package structure
CN103996785A (en) Built-in drive full-angle light-emitting LED light source and packaging process
CN104576910B (en) Method for manufacturing light emitting semiconductor device
KR20080041818A (en) Lens and light emitting device package including the same
CN100414701C (en) Light emitting system, light emitting device and forming method thereof
CN201859890U (en) Light source device
CN106887498A (en) Light emitting diode packaging structure and manufacturing method thereof
CN105023986B (en) Led
CN201638845U (en) Light-emitting diode device with film-coated structure
US20120273809A1 (en) Light emitting diode device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190312