CN103090231A - High-power light-emitting diode (LED) module and manufacturing method thereof - Google Patents
High-power light-emitting diode (LED) module and manufacturing method thereof Download PDFInfo
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- CN103090231A CN103090231A CN2013100231181A CN201310023118A CN103090231A CN 103090231 A CN103090231 A CN 103090231A CN 2013100231181 A CN2013100231181 A CN 2013100231181A CN 201310023118 A CN201310023118 A CN 201310023118A CN 103090231 A CN103090231 A CN 103090231A
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Abstract
The invention discloses a manufacturing method of a high-power light-emitting diode (LED) module. The method includes the following steps: 1) reflow soldering a heat sink on a heat dissipation module, 2) horizontally gluing chip soldering materials on the heat sink, then positioning an LED chip on the heat sink, using double gold wires connecting a positive electrode and a negative electrode of a chip support, and fixing a chip lens on the chip support, 3), fusing the heat dissipation module and the heat sink with silver fusing materials, and 4) at last spraying a heat energy conversion layer on the heat dissipation module and finishing manufacturing of the high-power LED module. The invention further discloses the high-power LED module which comprises the chip support with electrodes, the heat sink and the LED chip, wherein the heat sink is arranged in the chip support, the LED chip is connected with the heat sink through the chip soldering materials, the LED chip is electrically connected with the electrodes through the gold wires, the heat dissipation module is arranged on the lower portion of the heat sink, and the heat energy conversion layer is arrange on the surface of the heat dissipation module. The high-power LED module has the advantages of being little in heat resistance, fast in heat dissipation and long in service life.
Description
Technical field
The present invention relates to the LED lighting technical field, be specifically related to a kind of high-power LED module and preparation method thereof.
Background technology
The fluorescence material light conversion efficiency that white light LEDs uses can rise with temperature and reduce, its light conversion efficiency can sharply fail when the fluorescent material temperature surpasses more than 70 ℃, and the LED junction temperature is controlled in 70 ℃, could effectively guarantee the service life of LED, therefore, control extremely important to the LED junction temperature.And to the control of LED junction temperature, relate to heat transfer and the heat-sinking capability of LED.In existing high-power LED module, its heat passage is to the die bond layer by LED chip, be transmitted to again substrate, heat-conducting silicone grease, heat sink and radiating module, produced the multilayer thermal contact resistance, entire thermal resistance=the heat radiator thermal resistance of heat passage+heat-conducting medium thermal resistance (multilayer) is unfavorable for that the heat that LED chip sends distributes fast.And in heat passage, the silicone grease layer is the bottleneck of LED module heat radiation, and heat-conducting silicone grease " mummification " or " sclerosis " phenomenon can occur use a period of time in hot environment after, greatly affects its heat transfer and radiating effect.
In addition, existing central radiating module is the aluminium base radiating module, and the heat-sinking capability of aluminium is strong, but a little less than its heat absorption capacity, is unfavorable for absorption heat from heat sink fast, the heat-sinking capability of having slowed down whole heat passage.
Summary of the invention
Technical problem to be solved by this invention is to provide that a kind of thermal resistance is little, the high-power LED module of perfect heat-dissipating, long service life, and the preparation method of high-power LED module also is provided simultaneously.
For solving the problems of the technologies described above, the technical scheme of the present invention's design is as follows:
A kind of preparation method of high-power LED module comprises the following steps:
1) be reflow soldered on radiating module heat sink;
2) with the chip wlding flat be posted on heat sink on, then with LED chip be positioned at heat sink on, connect "+" "-" utmost point of chip set with two gold threads, then chip lens is fixed on chip set;
3) with silver-colored integrating materials with radiating module and heat sink fusion;
4) spray at last one deck thermal power transfer layer on radiating module, complete the making of high-power LED module.
Preferably, can with heat sink be reflow soldered on radiating module before, be first the thermal energy transfer layer that is become by zinc, nickel and copper of 0.01～0.02mm at the plated surface last layer thickness of radiating module, then be coated with last layer silver on thermal energy transfer layer surface and starch.
The described radiating module of such scheme can be copper aluminium radiating module.Because copper is faster than the aluminium heat absorption, but the heat radiation of copper is slower than aluminium, as radiating module, the heat on heat sink is conducted to fast on the aluminium of radiating module with albronze, heat on radiating module is gone out by the copper Quick diffusing, reach the effect of quick conduction heat and quick heat radiating.
Preferably, described thermal power transfer layer can be the nano metal material layer of being made by aluminum nitride nanometer material and nano zinc oxide material.
Preferably, described heat sink can the mixing in the ratio of 0.8～1.2:2.5～3.5 by diamond nano material and red copper makes by HTHP.
Preferably, can be mixed with nickel powder in described diamond nano material.
The present invention has also designed the high-power LED module of being made by above-mentioned preparation method simultaneously, comprise the chip set with electrode, heat sink and LED chip, described heat sink being arranged in chip set, described LED chip by the chip wlding be connected to heat sink on, LED chip is electrically connected to electrode by gold thread, described heat sink bottom is provided with radiating module, and this radiating module surface is provided with one deck thermal power transfer layer.
Preferably, described thermal power transfer layer can be the nano metal material layer of being made by aluminum nitride nanometer material and nano zinc oxide material.
Described radiating module can be aluminium radiating module or copper aluminium radiating module, and in order to improve radiating effect, described radiating module is preferably copper aluminium radiating module.
Preferably, can also be provided with the thermal energy transfer layer that is become by zinc, nickel and copper between radiating module and thermal power transfer layer, the thickness of this thermal energy transfer layer is 0.01～0.02mm.
Compared with prior art, the present invention has the following advantages:
1, with the direct upside-down mounting of LED chip on heat sink, by reducing thermal resistance, improve the Vf value, can improve LED chip light efficiency 10%; And LED chip and radiator (namely comprising heat sink and radiating module) carry out integrated integration, and the thermal resistance of heat-conducting medium levels off to zero, at this moment: the entire thermal resistance ≈ heat radiator thermal resistance of heat radiation heat passage;
2, heat sink growing is contained on copper aluminium radiating module, realizes the individual layer thermal resistance structure between LED chip and radiating module, compare the multilayer thermal resistance structure of traditional high-power LED module, can further reduce thermal resistance, improved greatly the heat transfer heat-sinking capability of light fixture;
3, in radiating module surface spraying nano material, thermal power transfer is become luminous energy, accelerate heat radiation in the infra-red radiation mode, environment temperature is higher, power is larger, and radiating effect is more obvious, can reduce 10% of lamp casing temperature;
4, individual layer thermal resistance structure has dwindled the volume of radiator, is conducive to improve the cost performance of LED light fixture;
5, the heat conduction of this programme and heat-sinking capability promote 2 times in the situation that original structure is constant, the high-power LED module of 30W is worked at normal temperatures, survey Tj=41. ℃, case temperature is 39 ℃, the surface temperature T ≈ Tj of radiator, and the area that only need control radiator just can be controlled the Tj of LED light fixture, controls light decay and life-span that Tj also just is equivalent to control the LED light fixture, the service life that can improve greatly light fixture.
Description of drawings
Fig. 1 is the structural representation of a kind of high-power LED module of the present invention.
Number in the figure is: 1, radiating module; 2, silver-colored integrating materials; 3, chip set; 4, chip lens; 5, LED chip; 6, chip wlding; 7, heat sink.
The specific embodiment
The preparation method of a kind of high-power LED module of the present invention comprises the following steps:
At first, at the plated surface last layer thermal energy transfer layer of radiating module 1, then coat the silver slurry on thermal energy transfer layer surface.Described radiating module 1 is copper aluminium radiating module 1, and it is to make by copper facing on aluminium.Described thermal energy transfer layer can in this preferred embodiment, be preferably the thermal energy transfer layer that is become by zinc, nickel and copper for heat transfer property high metal and metal alloy, and its thickness is 0.01～0.02mm.
Secondly, be reflow soldered on radiating module 1 heat sink 7.Described heat sink 7, are made through HTHP after the ratio mixing in 0.8～1.2:2.5～3.5 by diamond nano material and red copper, are preferably that 1:3 mixes in proportion.In the diamond nano material, also be mixed with nickel powder.
Again, be posted on heat sink 7 chip wlding 6 is flat, then LED chip 5 be positioned on heat sink 7, connect "+" "-" utmost point of chip set 3 with two gold threads, then chip lens 4 is fixed on chip set 3.
Again, with silver-colored integrating materials 2, radiating module 1 and heat sink 7 is merged, reinforce its structure.
At last, spraying one deck thermal power transfer layer, complete the making of high-power LED module on radiating module 1.Described thermal power transfer layer is that thermal power transfer is become luminous energy, accelerates heat radiation in the infra-red radiation mode, and it is preferably the nano metal material layer of being made by aluminum nitride nanometer material and nano zinc oxide material.
The high-power LED module that the present invention is made by above-mentioned preparation method, as described in Figure 1, comprise chip lens 4, with the chip set 3 of electrode, heat sink 7 and LED chip 5, described heat sink 7 are arranged in chip set 3, described LED chip 5 is connected on heat sink 7 by chip wlding 6, LED chip 5 is electrically connected to electrode by gold thread, and described heat sink 7 bottoms are connected with radiating module 1 by silver-colored integrating materials 2, and this radiating module 1 surface is provided with one deck thermal power transfer layer.Described chip lens 4 is located at chip set 3 tops, with LED chip 5 covers within it.
In order to improve thermal energy transfer efficient, also be provided with the thermal energy transfer layer that is become by zinc, nickel and copper between radiating module 1 and thermal power transfer layer, the thickness of this thermal energy transfer layer is 0.01～0.02mm.On the surface of thermal energy transfer layer, also be provided with one deck silver slurry.
The nano metal material layer of described thermal power transfer layer for being made by aluminum nitride nanometer material and nano zinc oxide material.Described radiating module 1 can be for aluminium radiating module 1 or copper aluminium radiating module 1, and in order to improve radiating effect, in this preferred embodiment, described radiating module 1 is preferably copper aluminium radiating module 1.Described heat sink 7 and 1 of radiating module also be provided with integrating materials, this integrating materials is silver-colored integrating materials 2.
Claims (10)
1. the preparation method of high-power LED module is characterized in that comprising the following steps:
1) heat sink (7) are reflow soldered on radiating module (1);
2) be posted on heat sink (7) chip wlding (6) is flat, then LED chip (5) is positioned on heat sink (7), connect "+" "-" utmost point of chip set (3) with two gold threads, then chip lens (4) is fixed on chip set (3);
3) with silver-colored integrating materials (2), radiating module (1) and heat sink (7) are merged;
4) at last at the upper spraying of radiating module (1) one deck thermal power transfer layer, complete the making of high-power LED module.
2. the preparation method of high-power LED module according to claim 1, it is characterized in that: before heat sink (7) being reflow soldered on radiating module (1), be first the thermal energy transfer layer that is become by zinc, nickel and copper of 0.01～0.02mm at the plated surface last layer thickness of radiating module (1), then be coated with last layer silver on thermal energy transfer layer surface and starch.
3. the preparation method of high-power LED module according to claim 1, it is characterized in that: described radiating module (1) is copper aluminium radiating module.
4. the preparation method of high-power LED module according to claim 1, is characterized in that: the nano metal material layer of described thermal power transfer layer for being made by aluminum nitride nanometer material and nano zinc oxide material.
5. the preparation method of high-power LED module according to claim 1 is characterized in that: described heat sink (7) are mixed in the ratio of 0.8～1.2:2.5～3.5 by diamond nano material and red copper and are made by HTHP.
6. the preparation method of high-power LED module according to claim 5, is characterized in that: be mixed with nickel powder in described diamond nano material.
7. the high-power LED module of being made by the described preparation method of any one in claim 1～6, comprise the chip set (3) with electrode, heat sink (7) and LED chip (5), it is characterized in that: described heat sink (7) are arranged in chip set (3), described LED chip (5) is connected on heat sink (7) by chip wlding (6), LED chip (5) is electrically connected to electrode by gold thread, described heat sink (7) bottom is provided with radiating module (1), and this radiating module (1) surface is provided with one deck thermal power transfer layer.
8. high-power LED module according to claim 7, is characterized in that: the nano metal material layer of described thermal power transfer layer for being made by aluminum nitride nanometer material and nano zinc oxide material.
9. high-power LED module according to claim 7, it is characterized in that: described radiating module (1) is copper aluminium radiating module.
10. high-power LED module according to claim 7, it is characterized in that: also be provided with the thermal energy transfer layer that is become by zinc, nickel and copper between radiating module (1) and thermal power transfer layer, the thickness of this thermal energy transfer layer is 0.01～0.02mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103438372A (en) * | 2013-08-27 | 2013-12-11 | 浙江佳宏电子科技有限公司 | Novel low-thermal-resistance LED street lamp body |
| CN111900612A (en) * | 2020-08-24 | 2020-11-06 | 武汉振光科技有限公司 | A miniature integrated multi-channel light-emitting controllable semiconductor laser array light source |
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| CN101482257A (en) * | 2008-12-03 | 2009-07-15 | 刘端蓉 | LED lamp and its cooling method and cooling structure |
| CN201549531U (en) * | 2009-10-30 | 2010-08-11 | 彩虹集团公司 | High-power LED packaging structure |
| CN201575346U (en) * | 2009-11-10 | 2010-09-08 | 秦文隆 | High-efficiency LED lamp |
| US20120001211A1 (en) * | 2010-06-30 | 2012-01-05 | Han-Ming Lee | Double layer injection mould LED bulb |
| CN102339945A (en) * | 2011-10-29 | 2012-02-01 | 华南师范大学 | High-power light-emitting diode with diamond powder-copper powder composite material as heat dissipation substrate |
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| CN103438372A (en) * | 2013-08-27 | 2013-12-11 | 浙江佳宏电子科技有限公司 | Novel low-thermal-resistance LED street lamp body |
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Application publication date: 20130508 |