CN101728366A - Photoelectric element packaging module and manufacturing method thereof - Google Patents

Abstract

The invention relates to a photoelectric element packaging module structure of a dielectric layer and a manufacturing method thereof. The packaging module structure comprises a heat dissipation substrate; a dielectric layer located above the heat dissipation substrate; a plurality of semiconductor light emitting crystal grains which are positioned in the concave part of the dielectric layer and fixed on the heat dissipation substrate; a printed circuit board with multiple holes corresponding to the recesses of the dielectric layer, covering the dielectric layer and exposing the semiconductor light-emitting dies; a plurality of metal wires electrically connect the plurality of semiconductor light-emitting crystal grains with the printed circuit board; and a transparent adhesive material for coating the plurality of semiconductor light-emitting dies and the plurality of metal wires. The manufacturing method forms a dielectric layer by a simple and rapid injection molding process, and takes the dielectric layer as a buffer layer and a reflecting cup between the printed circuit board and the radiating substrate, thereby not only effectively reducing the thermal stress between the printed circuit board and the radiating substrate, but also increasing the brightness of light.

Description

Photoelectric element packaging module and manufacturing method thereof

technical field

The invention relates to a packaging module of a photoelectric component and a manufacturing method thereof, in particular to a packaging module of a photoelectric component including a dielectric layer and a manufacturing method thereof.

Background technique

For light emitting diodes (Light Emitting Diode; LED), long life, low calorific value, low power consumption, energy saving and pollution reduction are the biggest advantages. In recent years, light-emitting diodes have been widely used in advertising boards, traffic signs, liquid crystal displays (Liquid Crystal Display; LCD) and backlights of portable electronic products such as mobile phones. In the future, they will have the opportunity to replace incandescent bulbs and fluorescent lamps in the application market.

In order to achieve white light applications, in the packaging structure of high-power LED modules, due to the high temperature generated when the LED module is driven by current, it will not only damage the semiconductor grains and accelerate its aging, but also related components contained in the LED module may also be affected by high temperature. Damaged by heat stress. Therefore, a light-emitting diode module packaging structure with high heat dissipation and a simple module packaging method are currently pursued by all walks of life.

In Taiwan Patent Publication No. I281272, please refer to FIG. 1, which is a cross-sectional view of a light-emitting diode packaging structure in the prior art. The packaging process provides a printed circuit board 101 with a plurality of spaced through holes. A plurality of circuit lines are arranged on one side of the aforementioned printed circuit board (PCB), and after the other side of the aforementioned printed circuit board is glued together with a metal substrate 102 through an adhesive layer 103, at least one light emitting Diode chips 104 and 105 are put into each of the aforementioned through holes so that they are attached to the aforementioned metal substrate 102, and then between each of the aforementioned LED chips 104 and the circuit traces on the aforementioned printed circuit board 101 Wires 106 and 107 are bonded to make them electrically connected, and finally glue 108 is sealed in each of the above-mentioned through-holes to seal each of the above-mentioned light-emitting diode chips 104 in each of the through-holes.

Many electronic products are faced with the problem of thermal stress, the most obvious is the electronic packaging industry, due to the difference in properties of heterogeneous materials in the packaging process, due to thermal expansion and contraction, mutual restraint occurs, resulting in warping deformation and stress. From the above knowledge, in the packaging process of the prior art, the printed circuit board and the heat dissipation substrate are directly bonded with an adhesive before the die-bonding operation. When the die-bonding is carried out at high temperature, the printed circuit board and the heat-dissipating substrate will Thermal stress (Thermal Stress) may be generated due to the difference in the coefficient of thermal expansion (Coefficient of thermal expansion; CTE) between the metal substrates, resulting in damage to the first module deformation of the LED module packaging components during the manufacturing process. In addition, after the packaging is completed, when the current drives the LED module, although the high temperature generated by the LED die is dissipated by the heat dissipation substrate, due to the expansion of the heat dissipation substrate after being heated, its connection with the printed circuit board and the LED die may be due to expansion. The coefficient difference produces a second thermal stress. Under high temperature for a long time, the service life of the light-emitting diode device will be shortened due to the thermal effect between the various components. It can be seen that the LED module packaging not only needs to consider the heat dissipation of the LED die, but also various components contained in the module also affect the service life of the module, and the possible adverse effects must be considered together.

Contents of the invention

Expansion with heat and contraction with cold is the common nature of substances, and the expansion coefficients of different substances are different. In order to achieve heat dissipation between the heat dissipation substrate, semiconductor light-emitting crystal grains and printed circuit boards, and reduce the damage caused by thermal stress to the module deformation, the present invention The purpose of the present invention is to provide a packaging structure of a semiconductor module comprising a dielectric layer and a manufacturing method thereof, which forms a dielectric layer with a simple and rapid injection molding (Injection Molding) process, and uses the dielectric layer as a printed circuit board and The buffer layer and reflective cup between the heat dissipation substrates can not only effectively reduce the thermal stress between the printed circuit board and the heat dissipation substrate, but also increase the brightness of light.

The present invention proposes a packaging module for optoelectronic components. The packaging module structure for the aforementioned optoelectronic components includes a heat dissipation substrate, a dielectric layer is located above the aforementioned heat dissipation substrate, and has a plurality of recesses for exposing part of the aforementioned heat dissipation substrate. A plurality of semiconductor light-emitting crystal grains are located in the recesses of the aforementioned dielectric layer and fixed on the aforementioned heat dissipation substrate. A printed circuit board with a plurality of holes corresponds to the recesses of the aforementioned dielectric layer, covering The plurality of semiconductor light-emitting crystal grains are exposed on the aforementioned dielectric layer, a plurality of metal wires electrically connect the aforementioned plurality of semiconductor light-emitting crystal grains to the aforementioned printed circuit board, and a transparent adhesive material is used for coating The aforementioned plurality of semiconductor light-emitting crystal grains and the aforementioned plurality of metal wires.

The above-mentioned semiconductor light-emitting crystal grain is electrically connected with the above-mentioned printed circuit board through at least one metal wire. The above-mentioned heat dissipation substrate is made of copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other metal materials with expansion coefficients similar to those of semiconductor luminescent grains.

The above-mentioned transparent sealing material is also mixed with a light conversion material, wherein the above-mentioned transparent sealing material is epoxy resin (epoxy) or silica gel (silicone gel), the aforementioned conversion material can be phosphor powder, and the aforementioned phosphor powder is silicon gel. salts, oxides, nitrides or sulfides.

The above-mentioned semiconductor light-emitting crystal grains can be light-emitting diode crystal grains, laser diodes, or light-sensing grains. The above-mentioned semiconductor light-emitting crystal grains are fixed on the heat dissipation substrate by die-bonding glue or eutectic bonding.

The recess of the medium is a hollow reflector, and the material of the dielectric layer is polyphthalamide (PPA) or polybutylene (PPB).

The present invention also provides a method for manufacturing a packaging module of a photoelectric element, the steps of which include: providing a heat dissipation substrate, forming a dielectric layer on the aforementioned heat dissipation substrate, forming a printed circuit board on the aforementioned dielectric layer, and placing multiple A semiconductor light-emitting crystal grain is fixed on the aforementioned heat dissipation substrate, a plurality of metal wires electrically connect the aforementioned semiconductor light-emitting crystal grain to the aforementioned printed circuit board, and a transparent adhesive material is used to cover the aforementioned plurality of semiconductor light-emitting crystal grains pellets with the aforementioned plurality of metal wires. Wherein the above-mentioned dielectric layer has a plurality of recesses to expose part of the aforementioned heat dissipation substrate, the aforementioned printed circuit board has a plurality of holes, the aforementioned plurality of holes correspond to the plurality of recesses of the aforementioned dielectric layer, and the aforementioned The plurality of semiconductor light-emitting grains correspond to the recesses of the aforementioned dielectric layer.

Considering that the packaging module of photoelectric components may vary due to the high and low temperatures used in each process step during manufacture, and the components may be damaged by thermal stress deformation before the module is completed due to the difference in expansion coefficient of the material. The invention also discloses two other manufacturing methods for packaging modules of optoelectronic components, wherein the steps of the first manufacturing method of packaging modules for optoelectronic components include: providing a heat dissipation substrate, forming a dielectric layer on the aforementioned heat dissipation substrate, wherein the aforementioned dielectric layer The electrical layer includes a plurality of recesses, and a plurality of semiconductor light-emitting crystal grains are respectively placed in the recesses of the aforementioned dielectric layer and fixed on the aforementioned heat dissipation substrate to form a printed circuit board with a plurality of holes. The aforementioned holes The notches corresponding to the recesses of the aforementioned dielectric layer cover the aforementioned dielectric layer to expose the aforementioned semiconductor light-emitting grains, and a plurality of metal wires connect the aforementioned semiconductor light-emitting grains to the aforementioned printed circuit board. Sexual connection, and a transparent adhesive material is used to cover the aforementioned plurality of semiconductor light-emitting crystal grains and the aforementioned plurality of metal wires.

The steps of the second method of manufacturing a packaging module of an optoelectronic component include: providing a heat dissipation substrate, fixing a plurality of semiconductor light-emitting crystal grains on the aforementioned heat dissipation substrate, forming a dielectric layer on the aforementioned heat dissipation substrate, and the aforementioned dielectric layer The electrical layer includes a plurality of recesses, the aforementioned recesses respectively correspond to and expose the aforementioned semiconductor light-emitting crystal grains, forming a printed circuit board with a plurality of holes, and the aforementioned holes correspond to the recesses of the aforementioned dielectric layer recesses The mouth is covered on the aforementioned dielectric layer, exposing the aforementioned semiconductor light-emitting grains, a plurality of metal wires electrically connect the aforementioned semiconductor light-emitting grains to the aforementioned printed circuit board, and a transparent adhesive material is used to cover the aforementioned A plurality of semiconductor light-emitting crystal grains and the aforementioned plurality of metal wires.

In addition to the general wire bonding method, the semiconductor light-emitting dies of the above-mentioned photoelectric component packaging module can also use the flip chip method (Flip Chip). The steps of the manufacturing method of the photoelectric component packaging module include: providing a heat dissipation substrate, A dielectric layer is formed on the aforementioned heat dissipation substrate, wherein the aforementioned dielectric layer includes a plurality of recesses, and a plurality of flip-chip semiconductor light-emitting dies are respectively placed in the recesses of the aforementioned dielectric layer and fixed on the aforementioned On the heat dissipation substrate, a printed circuit board with a plurality of holes is formed. The aforementioned holes correspond to the recesses of the aforementioned dielectric layer and cover the aforementioned dielectric layer, exposing the aforementioned flip-chip semiconductor light-emitting crystal. A plurality of metal wires electrically connect the sub-substrate of the flip-chip semiconductor light-emitting die and the aforementioned printed circuit board, and a transparent adhesive material is used to cover the aforementioned plurality of flip-chip semiconductor light-emitting dies and the aforementioned plurality of metal wires wire.

In the above-mentioned manufacturing method of the packaging module of the optoelectronic component, the holes of the printed circuit board can be drilled by CNC.

In the manufacturing method of the packaging module of the optoelectronic element mentioned above, a dielectric layer is formed by injection molding technology, and the above dielectric layer is a hollow reflector.

In the manufacturing method of the packaging module of the above-mentioned optoelectronic element, the above-mentioned semiconductor light-emitting die is electrically connected to the above-mentioned printed circuit board by wire bonding technology.

The above-mentioned heat dissipation substrate is made of copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other metal materials with expansion coefficients similar to their semiconductor luminescent grains.

The aforementioned transparent sealing material is also mixed with a light conversion material, wherein the aforementioned transparent sealing material is epoxy resin (epoxy) or silica gel (silicone gel), and the aforementioned converting material can be fluorescent powder.

The aforementioned semiconductor die can be a light emitting diode die, a laser diode or a light sensing die.

The above crystal grains are fixed on the heat dissipation substrate by silver glue or eutectic bonding.

The recess of the medium is a hollow reflector, and the material of the dielectric layer is polyphthalamide (PPA) or polybutylene (PPB).

Description of drawings

1 is a cross-sectional view of a light emitting diode packaging structure in the prior art;

Fig. 2 is the schematic diagram of the light-emitting diode packaging structure of the present invention;

Fig. 3 is a flow chart of the packaging module structure of the semiconductor light-emitting module of the present invention;

Figures 4(a)-4(g) are one of the embodiments of the semiconductor light-emitting module packaging module of the crystal bonding technology of the present invention;

Figures 5(a) to 5(g) are the second embodiment of the semiconductor light-emitting module packaging module of the crystal bonding technology of the present invention;

Figures 6(a) to 6(g) are the third embodiment of the semiconductor light-emitting module packaging module of the crystal bonding technology of the present invention;

7( a ) to 7 ( h ) are one embodiment of the packaging module of the semiconductor light-emitting module of the flip-chip technology of the present invention.

Wherein, the reference signs are explained as follows:

101 Printed circuit board 102 Metal substrate

103 glued layer 104 grain

105 crystal grains 106 metal wires

107 metal wire 108 transparent sealant

201, 401, 501, 601, 701 printed circuit boards

202, 402, 502, 602, 702 holes

203, 403, 503, 603, 703 heat dissipation substrate

204, 404, 504, 604, 704 dielectric layer

205, 405, 505, 605, 705 recesses

206, 406, 506, 606, 706 semiconductor light-emitting grains

207, 407, 507, 607, 707 metal wire

208, 408, 508, 608, 708 transparent glue

209, 409, 509, 609, 709 light conversion materials

706 flip-chip semiconductor light-emitting die 711 bump

712 welding pad 713 sub-substrate

Detailed ways

The present invention describes a packaging module for optoelectronic components and its manufacturing method. In order to provide a thorough understanding of the present invention, detailed steps and components thereof will be set forth in the following description. Obviously, the practice of the invention is not restricted to specific details well known to those skilled in the art of encapsulation modules for optoelectronic components and methods for their manufacture. On the other hand, well-known components or steps have not been described in detail so as not to unnecessarily limit the invention. Preferred embodiments of the present invention will be described in detail as follows, however, in addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, it is defined in the appended claims The limited scope of protection prevails.

The present invention proposes a packaging module for optoelectronic components, please refer to Figure 2, this packaging module includes a heat dissipation substrate 203, the heat dissipation substrate can be copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum - Copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other expansion coefficients with multiple semiconductor light emitting grains similar metal materials. A dielectric layer 204 is located above the aforementioned heat dissipation substrate 203, and has a plurality of recesses 205 for exposing part of the aforementioned heat dissipation substrate 203. The material of the dielectric layer 204 can be polyphthalamide (Polyphthalamide; PPA) or Polybutyne (PPB). A plurality of semiconductor light-emitting dies 206 are located in the recess 205 of the aforementioned dielectric layer 204 and fixed on the aforementioned heat dissipation substrate, and the semiconductor light-emitting dies 206 can be wire-bonded or flip-chip. A printed circuit board 201 with a plurality of holes 202 corresponding to the recesses 205 of the aforementioned dielectric layer 204 covers the aforementioned dielectric layer 204 and exposes the aforementioned plurality of semiconductor light emitting crystals 206 . A plurality of metal wires 207 electrically connect the aforementioned plurality of semiconductor light-emitting dies 206 to the aforementioned printed circuit board 201, and a transparent adhesive material 208 is used to cover the aforementioned plurality of semiconductor light-emitting dies 206 and the aforementioned plurality of Metal wire 207 . The aforementioned transparent adhesive material 208 may include a light conversion material 209 , and the aforementioned light conversion material 209 may be phosphor powder, which includes silicates, oxides, nitrides, or sulfides.

The invention discloses a manufacturing process of a packaging module for photoelectric components, please refer to Figure 3, which includes:

Step 1 (301): providing a heat dissipation substrate;

Step 2 (302): forming a dielectric layer on the aforementioned heat dissipation substrate by injection molding technology, wherein the aforementioned dielectric layer includes a plurality of recesses and exposes part of the heat dissipation substrate;

Step 3 (303): placing a plurality of semiconductor light-emitting crystal grains in the recesses of the aforementioned dielectric layers and fixing them on the aforementioned heat dissipation substrate;

Step 4 (304): covering a printed circuit board with holes on the aforementioned dielectric layer with the holes corresponding to the notches of the aforementioned dielectric layer;

Step 5 (305): electrically connecting the aforementioned plurality of semiconductor light-emitting dies and the aforementioned printed circuit board with metal wires;

Step 6 (306): Finally, cover the aforementioned plurality of semiconductor light-emitting dies and the aforementioned metal wires with a transparent adhesive material.

During the manufacturing process of the packaging module of optoelectronic components, when the high and low temperatures used in the above-mentioned process steps may vary, the components may be damaged by the deformation of thermal stress before the completion of the module due to the difference in the expansion coefficient of the material. , the manufacturing process can change the program due to the temperature used, and the program from high temperature to low temperature can reduce the influence of thermal stress.

The invention discloses a method for manufacturing a packaging module of a photoelectric component. The steps include: Please refer to FIG. Its heat dissipation substrate 403 can be copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN ), silicon (Si), beryllium oxide (BeO), diamond or other metal materials with a coefficient of expansion similar to its multiple semiconductor light-emitting crystal grains, and then form a dielectric layer 404 on the aforementioned heat dissipation substrate by injection molding technology. The recess 405 of the electrical layer 404 is a hollow reflector, which can be used as a buffer layer and reflective cup for thermal stress between materials, and increases the brightness of semiconductor light-emitting crystal grains. The material of the dielectric layer 404 can be polyphthalamide (Polyphthalamide; PPA) or polybutyne (PPB). The general injection molding (Injection Molding) procedure mainly has five procedures, (1) Preheating stage (Preheating): This stage includes plastic pre-baking, preheating and mold heating. Pre-baking means heating the plastic with a drying machine to about 10-15°C lower than the Glass Transition Temperature (Glass Transition Temperature), and maintaining it for a period of time to remove the moisture in the plastic. Preheat and preheat the screw of the injection molding machine, and then turn the screw to squeeze the plastic into the plunger to prepare the plastic for injection. At this time, the mold is also heated to reach the mold temperature during injection. (2) Filling stage (Filling): use hydraulic pressure to push the screw or plunger, extrude the molten plastic, inject it into the mold, and fill the entire cavity through the runner, runner, and inlet cavity. space. (3) Packing stage: After the mold cavity is completely filled with plasticization, high pressure is applied to inject more plastic. The purpose of packing is twofold: (a) After filling is completed, the plastic will not flow back due to cooling and solidification. (b) Keep the plastic in the mold cavity at high pressure, the plastic and the mold wall will not separate due to cooling and shrinkage, and keep them close to each other, making the molded product more compact, so that the plastic can completely replicate the shape of the mold cavity without distortion due to shrinkage . (4) Cooling stage (cooling): Wait for the plastic in the mold cavity to completely cool down to the mold temperature, so that the plastic can be completely solidified and reach a certain strength, and avoid deformation caused by the plastic sticking to the mold when the mold is opened. (5) Mold Open: Open the mold, pull the molded product out of the fixed side mold surface by the pull pin, and then push out the movable side mold surface with the ejector pin, so that the molded product falls naturally. Repeat the five steps of (1) to (5) to form the entire injection molding cycle.

Referring to FIG. 4( c ), a printed circuit board 401 with holes is provided and adhered on the above dielectric layer 404 with epoxy as an adhesive. The aforementioned printed circuit board 401 with multiple holes can be divided into two types of processes, the subtractive method and the additive method. In addition, the multi-layer manufacturing technology includes two types: the build-up method and the layer-up method. . The subtraction method is to use chemicals or machinery to remove unnecessary places on a blank circuit board (that is, a circuit board covered with a complete piece of metal foil), and the remaining place is the required circuit. The additive method is now generally on a substrate that is pre-plated with thin copper, covered with photoresist (D/F), exposed to ultraviolet light and then developed, exposing the required place, and then using electroplating to complete the official circuit on the circuit board. The copper thickness is increased to the required specifications, and then coated with a layer of anti-etching resist-metal thin tin, and finally the photoresist is removed (this process is called film removal), and then the copper foil layer under the photoresist is etched away . The lamination method is one of the methods for making multi-layer printed circuit boards. It is to wrap the outer layer after the inner layer is made, and then treat the outer layer with the subtractive method or the additive method, and repeat the lamination action continuously. The resulting multilayer printed circuit board is sequential build-up. The build-up method is one of the methods for making multi-layer printed circuit boards. As the name implies, the printed circuit boards are added layer by layer. Each additional layer is processed to the desired shape. After selecting one of the above-mentioned printed circuit board manufacturing processes and completing them, the holes are preferably completed before the circuit layout and electroplating processing, which can reduce the damage to the circuit distribution and surface plating layer caused by drilling holes or damage the board surface due to stress. , the hole can be drilled by CNC, and the size of the aforementioned hole 402 must match the notch of the aforementioned dielectric layer recess, as shown in FIG. 4(a).

Please refer to FIG. 4 (d), a plurality of semiconductor light emitting crystal grains 406 are fixed on the aforementioned heat dissipation substrate 403 by using silver glue or eutectic bonding. The aforementioned semiconductor light emitting crystal grains 406 can be light emitting diodes, laser light emitting diodes or light-sensing die.

Please refer to FIG. 4(e), a plurality of metal wires 407 electrically connect the aforementioned semiconductor light-emitting die 406 to the aforementioned printed circuit board 401 via wire bonding (wire bonding) technology, and the aforementioned metal wires 407 can be Gold, silver, copper or aluminum wire.

Finally, the transparent adhesive material 408 is used as a protective layer to cover the semiconductor light-emitting die 406 and the plurality of metal wires 407 by means of transfer-molding or injection-molding. The material of 408 can be epoxy resin (epoxy) or silicone gel (silicone gel). If the aforementioned plurality of semiconductor light-emitting crystal grains 406 and the aforementioned plurality of metal wires 407 are coated with a transparent adhesive material alone, so that the aforementioned semiconductor light-emitting crystal grains 406 only emit electromagnetic radiation wavelengths of monochromatic wavelengths, the aforementioned transparent The adhesive material contains a light conversion material 409, and the aforementioned light conversion material 409 can be a phosphor, so that the aforementioned phosphor can be excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal 406 to form white light or other Multiple wavelengths of electromagnetic radiation wavelengths. The aforementioned phosphors include silicates, oxides, nitrides or sulfides. Please refer to Figure 4(f).

In addition, in the sealing process, the first layer of adhesive material containing the light conversion material 409 can be coated first, and then the second layer of transparent adhesive material 408 can be covered, or the first layer of transparent adhesive material 408 can be coated first, and then the second layer of transparent adhesive material 408 can be covered. The layer contains a light-converting material 409, and the above-mentioned light-converting material can also be excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal grain 406 to form white light or other multi-wavelength electromagnetic radiation. wavelength, please refer to Figure 4(g).

Wherein the aforementioned dielectric layer 404 has a plurality of recesses 405 to expose part of the aforementioned heat dissipation substrate 403, the aforementioned printed circuit board 401 has a plurality of holes 402, the plurality of holes 402 and the plurality of holes 402 of the aforementioned dielectric layer 404 The recess 405 corresponds, and the aforementioned plurality of semiconductor light-emitting dies 406 correspond to the aforementioned recess 405 of the dielectric layer 404 .

Considering that during the manufacturing process of the photoelectric component packaging module, the temperature may vary due to the high and low temperatures of each process step, so that the components may be damaged by thermal stress deformation before the completion of the module due to the difference in the expansion coefficient of the material , the present invention also discloses two other manufacturing methods for packaging modules of optoelectronic components, wherein the steps of the first manufacturing method of packaging modules for optoelectronic components include: Please refer to Figure 5(b), in order to improve the heat dissipation of the packaging modules, this The invention provides a heat dissipation substrate to improve the overheating of the packaged module. The heat dissipation substrate 503 can be copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), Aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon (Si), beryllium oxide (BeO), diamond or other metal materials with expansion coefficients similar to their multiple semiconductor light-emitting grains, and then form a medium by injection molding technology The electrical layer 504 is on the aforementioned heat dissipation substrate 503, the aforementioned dielectric layer 504 has a plurality of recesses 505 to expose part of the aforementioned heat dissipation substrate 503, and the aforementioned recesses 505 of the dielectric layer 504 are a hollow reflector, It can be used as a buffer layer and reflective cup for thermal stress between materials, and increase the brightness of semiconductor light-emitting grains. The material can be polyphthalamide (PPA) or polybutylene (PPB). There are five main procedures in the general injection molding process, (1) Preheating stage (Preheating): This stage includes plastic pre-baking, preheating and mold heating. Pre-baking is to heat the plastic in a drying machine to about 10-15°C lower than the Glass Transition Temperature, and keep it for a period of time to remove the moisture in the plastic. Preheat and preheat the screw of the injection molding machine, and then turn the screw to squeeze the plastic into the plunger to prepare the plastic for injection. At this time, the mold is also heated to reach the mold temperature during injection. (2) Filling stage (Filling): use hydraulic pressure to push the screw or plunger, extrude the molten plastic, inject it into the mold, and fill the entire cavity through the runner, runner, and inlet cavity. space. (3) Packing stage: After the mold cavity is completely filled with plasticization, high pressure is applied to inject more plastic. The purpose of packing is twofold: (a) After filling is completed, the plastic will not flow back due to cooling and solidification. (b) Keep the plastic in the mold cavity at high pressure, the plastic and the mold wall will not separate due to cooling and shrinkage, and keep them close to each other, making the molded product more compact, so that the plastic can completely replicate the shape of the mold cavity without distortion due to shrinkage . (4) Cooling stage (Cooling): Wait for the plastic in the mold cavity to completely cool down to the mold temperature, so that the plastic can be completely solidified and reach a certain strength, and avoid deformation caused by the plastic sticking to the mold when the mold is opened. (5) Mold Open: Open the mold, pull the molded product out of the fixed side mold surface by the pull pin, and then push out the movable side mold surface with the ejector pin, so that the molded product falls naturally. Repeat the five steps of (1) to (5) to form the entire injection molding cycle.

Please refer to FIG. 5(c), a plurality of semiconductor light-emitting crystal grains 506 are fixed on the heat dissipation substrate 503 using silver glue or eutectic bonding. The aforementioned semiconductor light-emitting crystal grains 506 can be light-emitting diodes, laser light-emitting diodes or sensing die.

Please refer to Fig. 5 (d) shown, provide a printed circuit board 501 with holes and use epoxy resin (epoxy) as an adhesive to adhere and cover above the aforementioned dielectric layer 504, and its plurality of holes 502 and the aforementioned dielectric The plurality of recesses 505 of the layer 504 correspond to and expose a plurality of semiconductor light emitting dies 506 . The above-mentioned printed circuit board with holes can be divided into two basic manufacturing techniques: subtractive method and additive method. In addition, multi-layer manufacturing technology includes two types: build-up method and build-up method. The subtraction method is to use chemicals or machinery to remove unnecessary places on a blank circuit board (that is, a circuit board covered with a complete piece of metal foil), and the remaining place is the required circuit. The additive method is now generally on a substrate that is pre-plated with thin copper, covered with photoresist (D/F), exposed to ultraviolet light and then developed, exposing the required place, and then using electroplating to complete the official circuit on the circuit board. The copper thickness is increased to the required specifications, and then coated with a layer of anti-etching resist-metal thin tin, and finally the photoresist is removed (this process is called film removal), and then the copper foil layer under the photoresist is etched away . The lamination method is one of the methods for making multilayer printed circuit boards. The outer layer is wrapped after the inner layer is made, and then the outer layer is processed by subtraction or addition, and the action of the lamination method is repeated continuously. The multilayer printed circuit boards that can be obtained are sequential build-up methods. The build-up method is one of the methods for making multi-layer printed circuit boards. As the name implies, the printed circuit boards are added layer by layer. Each additional layer is processed to the desired shape. After selecting one of the above-mentioned printed circuit board manufacturing processes and completing them, the holes are preferably completed before the circuit layout and electroplating processing, which can reduce the damage to the circuit distribution and surface plating layer caused by drilling holes or damage the board surface due to stress. The hole can be drilled by CNC, and the size of the aforementioned hole 501 must match the notch of the aforementioned dielectric layer recess, as shown in FIG. 5( a ).

Please refer to FIG. 5(e), a plurality of metal wires 507 are electrically connected to the aforementioned semiconductor light-emitting die 506 and the aforementioned printed circuit board 502 via wire bonding (wire bonding), and the aforementioned metal wires 507 can be Gold, silver, copper or aluminum wire.

Finally, the transparent adhesive material 508 is used as a protective layer to cover the semiconductor light-emitting die 506 and the plurality of metal wires 507 by means of transfer-molding or injection-molding. The material of the 508 can be epoxy resin (epoxy) or silicone gel (silicone gel). If the aforementioned plurality of semiconductor light-emitting crystal grains 506 and the aforementioned plurality of metal wires 507 are coated with a transparent adhesive material alone, so that the aforementioned semiconductor light-emitting crystal grains 506 only emit electromagnetic radiation wavelengths of monochromatic wavelengths, the aforementioned transparent The adhesive material contains a light conversion material 509, and the aforementioned light conversion material 509 can be a phosphor, so that the aforementioned phosphor can be excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal 506 to form white light or other Multiple wavelengths of electromagnetic radiation wavelengths. The aforementioned phosphors include silicates, oxides, nitrides or sulfides. Please refer to Figure 5(f).

In addition, in the sealing process, the first layer of adhesive material containing the light conversion material 509 can be coated first, and then the second layer of transparent adhesive material 508 can be covered, or the first layer of transparent adhesive material 508 can be coated first, and then the second layer of transparent adhesive material 508 can be covered. The layer contains a light-converting material 509, and the above-mentioned light-converting material can also be excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal grain 506 to form white light or other multi-wavelength electromagnetic radiation. For the wavelength, please refer to Figure 5(g).

The steps of the manufacturing method of the packaging module of the second kind of photoelectric element include: Please refer to Fig. 6 (b) shown, in order to improve the heat dissipation problem of the packaging module, the present invention provides a heat dissipation substrate to improve the problem of overheating of the packaging module, and its heat dissipation substrate 603 can be It is copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon (Si ), beryllium oxide (BeO), diamond or other metal materials with expansion coefficients similar to the plurality of semiconductor light-emitting crystal grains 606, and then the multiple semiconductor light-emitting crystal grains 606 are fixed on the heat dissipation substrate 603 using silver glue or eutectic bonding, The aforementioned semiconductor light-emitting die 606 can be a light-emitting diode, a laser light-emitting diode, or a light-sensing die.

Please refer to FIG. 6(c), a dielectric layer 604 is formed on the aforementioned heat dissipation substrate 603 by injection molding technology, and the recess 605 of the dielectric layer 604 is a hollow reflector, which can be used as a thermal stress between materials. The buffer layer and reflective cup, and increase the brightness of the semiconductor light-emitting grain 606, its material can be polyphthalamide (Polyphthalamide; PPA) or polybutyne (PPB) and the aforementioned dielectric layer 604 includes a plurality of concave At 605 , the aforementioned recesses 605 respectively correspond to and expose the aforementioned semiconductor light-emitting dies 606 . There are five main procedures in the general injection molding process, (1) Preheating stage (Preheating): This stage includes plastic pre-baking, preheating and mold heating. Pre-baking is to heat the plastic in a drying machine to about 10-15°C lower than the Glass Transition Temperature, and keep it for a period of time to remove the moisture in the plastic. Preheat and preheat the screw of the injection molding machine, and then turn the screw to squeeze the plastic into the plunger to prepare the plastic for injection. At this time, the mold is also heated to reach the mold temperature during injection. (2) Filling stage (Filling): use hydraulic pressure to push the screw or plunger, extrude the molten plastic, inject it into the mold, and fill the entire cavity through the runner, runner, and inlet cavity. space. (3) Packing stage: After the mold cavity is completely filled with plasticization, high pressure is applied to inject more plastic. The purpose of packing is twofold: (a) After filling is completed, the plastic will not flow back due to cooling and solidification. (b) Keep the plastic in the mold cavity at high pressure, the plastic and the mold wall will not separate due to cooling and shrinkage, and keep them close to each other, making the molded product more compact, so that the plastic can completely replicate the shape of the mold cavity without distortion due to shrinkage . (4) Cooling stage (Cooling): Wait for the plastic in the mold cavity to completely cool down to the mold temperature, so that the plastic can be completely solidified and reach a certain strength, and avoid deformation caused by the plastic sticking to the mold when the mold is opened. (5) Mold Open: Open the mold, pull the molded product out of the fixed side mold surface by the pull pin, and then push out the movable side mold surface with the ejector pin, so that the molded product falls naturally. Repeat the five steps of (1) to (5) to form the entire injection molding cycle.

Please refer to FIG. 6 (d), a printed circuit board 601 with a plurality of holes is provided, the aforementioned holes 602 correspond to the notches of the aforementioned recesses 605 of the dielectric layer 604, and epoxy resin (epoxy) The adhesive covers the aforementioned dielectric layer 604 to expose the aforementioned semiconductor light emitting die 606 . The aforementioned printed circuit board 601 with a plurality of holes 602 can be divided into two types of processes, the subtractive method and the additive method. In addition, the multi-layer manufacturing technology includes the build-up method and the layer-up method. two kinds. The subtraction method is to use chemicals or machinery to remove unnecessary places on a blank circuit board (that is, a circuit board covered with a complete piece of metal foil), and the remaining place is the required circuit. The additive method is now generally on a substrate that is pre-plated with thin copper, covered with photoresist (D/F), exposed to ultraviolet light and then developed, exposing the required place, and then using electroplating to complete the official circuit on the circuit board. The copper thickness is increased to the required specifications, and then coated with a layer of anti-etching resist-metal thin tin, and finally the photoresist is removed (this process is called film removal), and then the copper foil layer under the photoresist is etched away . The lamination method is one of the methods for making multi-layer printed circuit boards. It is to wrap the outer layer after the inner layer is made, and then treat the outer layer with the subtractive method or the additive method, and repeat the lamination action continuously. The resulting multilayer printed circuit board is sequential build-up. The build-up method is one of the methods for making multi-layer printed circuit boards. As the name implies, the printed circuit boards are added layer by layer. Each additional layer is processed to the desired shape. After selecting one of the above-mentioned printed circuit board manufacturing processes and completing them, the holes are preferably completed before the circuit layout and electroplating processing, which can reduce the damage to the circuit distribution and surface plating layer caused by drilling holes or damage the board surface due to stress. , the hole can be drilled by CNC, and the size of the aforementioned hole must match the notch of the dielectric layer, as shown in Figure 6(a).

Please refer to Figure 6(e), a plurality of metal wires 607 electrically connect the aforementioned semiconductor light-emitting die 606 to the aforementioned printed circuit board 601 via wire bonding (wire bonding) technology, and the aforementioned metal wires 607 can be Gold, silver, copper or aluminum wire.

Finally, the transparent adhesive material 608 is used as a protective layer to cover the semiconductor light-emitting die 606 and the plurality of metal wires 607 by means of transfer-molding or iniect-molding. The material of 608 can be epoxy resin (epoxy) or silicone gel (silicone gel). If the aforementioned plurality of semiconductor light-emitting crystal grains 606 and the aforementioned plurality of metal wires 607 are coated with a transparent adhesive material alone, so that the aforementioned semiconductor light-emitting crystal grains 606 only emit electromagnetic radiation wavelengths of monochromatic wavelengths, the aforementioned transparent The adhesive material contains a light conversion material 609, the aforementioned light conversion material 609 can be a phosphor powder, so the aforementioned phosphor powder can be excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal 606 to form white light or other Multiple wavelengths of electromagnetic radiation wavelengths. The aforementioned phosphors include silicates, oxides, nitrides or sulfides. Please refer to Figure 6(f).

In addition, in the sealing process, the first layer of adhesive material containing the light conversion material 609 can be coated first, and then the second layer of transparent adhesive material 608 can be covered, or the first layer of transparent adhesive material 608 can be coated first, and then the second layer can be covered. The layer contains a light-converting material 609 of glue, and the above-mentioned light-converting material can also be a phosphor powder that is excited to generate a second wavelength and mix with the primary wavelength generated by the semiconductor light-emitting crystal grain 606 to form white light or other multi-wavelength electromagnetic radiation For the wavelength, please refer to Figure 6(g).

In addition to the wire bonding method, the semiconductor light-emitting dies of the above-mentioned photoelectric component packaging module can also use a flip chip (Flip Chip) method. Please refer to FIG. 7 (b) for the flip-chip structure of the general semiconductor light-emitting die. The sub-base 713 is provided with a bonding pad 712, and the semiconductor light-emitting die 710 is provided with bumps 711. When the semiconductor light-emitting die 710 When overturned on the sub-substrate 713 , the aforementioned bumps 711 will be connected to their corresponding bonding pads (bonding pads) 712 , and the semiconductor light emitting die 710 is electrically connected to the bonding pads 712 through the bumps 711 .

The steps of the manufacturing method of the packaging module of the flip-chip photoelectric component include: Please refer to FIG. It can be copper, nickel, silver, lead, gold, or alloys of the foregoing metals, or copper-molybdenum-copper (CuMoCu), tungsten-copper (WCu), aluminum silicon carbide (AlSiC), aluminum nitride (AlN), silicon ( Si) beryllium oxide (BeO), diamond or other metal materials with expansion coefficients similar to their multiple semiconductor luminescent grains. Then, a dielectric layer 704 is formed on the aforementioned heat dissipation substrate by injection molding technology. The aforementioned dielectric layer 704 has a plurality of recesses 705 to expose part of the aforementioned heat dissipation substrate 703. The recesses 705 of the dielectric layer 704 are A hollow reflector, which can be used as a buffer layer and reflective cup for thermal stress between materials, and increases the brightness of semiconductor light-emitting crystal grains, and its material can be polyphthalamide (Polyphthalamide; PPA) or polybutyne (PPB) . There are five main procedures in the general injection molding process, (1) Preheating stage (Preheating): This stage includes plastic pre-baking, preheating and mold heating. Pre-baking is to heat the plastic in a drying machine to about 10-15°C lower than the Glass Transition Temperature, and keep it for a period of time to remove the moisture in the plastic. Preheat and preheat the screw of the injection molding machine, and then turn the screw to squeeze the plastic into the plunger to prepare the plastic for injection. At this time, the mold is also heated to reach the mold temperature during injection. (2) Filling stage (Filling): use hydraulic pressure to push the screw or plunger, extrude the molten plastic, inject it into the mold, and fill the entire cavity through the runner, runner, and inlet cavity. space. (3) Packing stage: After the mold cavity is completely filled with plasticization, high pressure is applied to inject more plastic. The purpose of packing is twofold: (a) After filling is completed, the plastic will not flow back due to cooling and solidification. (b) Keep the plastic in the mold cavity at high pressure, the plastic and the mold wall will not separate due to cooling and shrinkage, and keep them close to each other, making the molded product more compact, so that the plastic can completely replicate the shape of the mold cavity without distortion due to shrinkage . (4) Cooling stage (Cooling): Wait for the plastic in the mold cavity to completely cool down to the mold temperature, so that the plastic can be completely solidified and reach a certain strength, and avoid deformation caused by the plastic sticking to the mold when the mold is opened. (5) Mold Open: Open the mold, pull the molded product out of the fixed side mold surface by the pull pin, and then push out the movable side mold surface with the ejector pin, so that the molded product falls naturally. Repeat the five steps of (1) to (5) to form the entire injection molding cycle.

Please refer to FIG. 7( d ), a plurality of flip-chip semiconductor light-emitting dies 706 are fixed on the heat dissipation substrate 703 with silver glue. grain.

Please refer to Fig. 7 (e) shown, provide a printed circuit board 701 with holes and use epoxy resin (epoxy) as an adhesive to stick on the above-mentioned dielectric layer 704, its multiple holes 701 and the aforementioned dielectric layer The plurality of recesses 705 of 704 correspond to and expose a plurality of flip-chip semiconductor light emitting dies 706 . The above-mentioned printed circuit board with holes can be divided into two basic manufacturing techniques: subtractive method and additive method. In addition, multi-layer manufacturing technology includes two types: build-up method and build-up method. The subtraction method is to use chemicals or machinery to remove unnecessary places on a blank circuit board (that is, a circuit board covered with a complete piece of metal foil), and the remaining place is the required circuit. The additive method is now generally on a substrate that is pre-plated with thin copper, covered with photoresist (D/F), exposed to ultraviolet light and then developed, exposing the required place, and then using electroplating to complete the official circuit on the circuit board. The copper thickness is increased to the required specifications, and then coated with a layer of anti-etching resist-metal thin tin, and finally the photoresist is removed (this process is called film removal), and then the copper foil layer under the photoresist is etched away . The lamination method is one of the methods for making multi-layer printed circuit boards. It is to wrap the outer layer after the inner layer is made, and then treat the outer layer with the subtractive method or the additive method, and repeat the lamination action continuously. The resulting multilayer printed circuit board is sequential build-up. The build-up method is one of the methods for making multi-layer printed circuit boards. As the name implies, the printed circuit boards are added layer by layer. Each additional layer is processed to the desired shape. After selecting one of the above-mentioned printed circuit board manufacturing processes and completing them, the holes are preferably completed before the circuit layout and electroplating processing, which can reduce the damage to the circuit distribution and surface plating layer caused by drilling holes or damage the board surface due to stress. , the hole can be drilled by CNC, and the size of the aforementioned hole 501 must match the notch of the dielectric layer recess, as shown in FIG. 7(a).

Please refer to FIG. 7(f), a plurality of metal wires 707 connect the pads 712 on the sub-substrate of the aforementioned flip-chip semiconductor light-emitting die 706 to the aforementioned printed circuit board 701 through wire bonding (wire bonding) technology. The aforementioned metal wire 707 can be a gold wire, a silver wire, a copper wire or an aluminum wire.

Finally, use a transparent adhesive material 708 to cover the flip-chip semiconductor light-emitting die 706 and the plurality of metal wires 707 as a protective layer through transfer-molding or injection-molding. The material of the glue 708 can be epoxy or silicone gel. If the aforementioned plurality of semiconductor light-emitting crystal grains 706 and the aforementioned plurality of metal wires 707 are coated with a transparent adhesive material alone, so that the aforementioned semiconductor light-emitting crystal grains 706 only emit electromagnetic radiation wavelengths of monochromatic wavelengths, the aforementioned transparent The adhesive material contains a light conversion material 709, and the aforementioned light conversion material 709 can be a phosphor, so that the aforementioned phosphor can be excited to generate a second wavelength and mix with the primary wavelength generated by the flip-chip semiconductor light-emitting die 706 to form white light or are other multi-wavelength electromagnetic radiation wavelengths. The aforementioned phosphors include silicates, oxides, nitrides or sulfides. Please refer to Figure 7(g).

In addition, in the sealing process, the first layer of adhesive material containing the light conversion material 709 can be coated first, and then the second layer of transparent adhesive material 708 can be covered, or the first layer of transparent adhesive material 608 can be coated first, and then the second layer of transparent adhesive material can be covered. The layer contains a light-converting material 709 of glue, and the above-mentioned light-converting material can be excited to generate a second wavelength and mix with the primary wavelength generated by the flip-chip semiconductor light-emitting die 706 to form white light or other multi-wavelength For the wavelength of electromagnetic radiation, please refer to Figure 7(h).

Obviously, according to the description in the above embodiments, the present invention may have many modifications and differences. It is therefore to be understood that within the scope defined by the appended claims, the invention may be practiced broadly in other embodiments than those described in detail above. The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention; all other equivalent changes or modifications that do not deviate from the spirit disclosed in the present invention shall be included in the attached within the scope of the claims.

Claims (11)

1. A packaging module for photoelectric components, comprising a heat dissipation substrate; A dielectric layer, located above the heat dissipation substrate, has a plurality of recesses for exposing part of the heat dissipation substrate; A plurality of semiconductor light-emitting crystal grains are located in the recess of the dielectric layer and fixed on the heat dissipation substrate; A printed circuit board with a plurality of holes, the holes corresponding to the recesses of the dielectric layer, covering the dielectric layer and exposing the plurality of semiconductor light-emitting crystal grains; A plurality of metal wires electrically connect the plurality of semiconductor light-emitting dies with the printed circuit board; and A transparent adhesive material is used to cover the plurality of semiconductor light-emitting crystal grains and the plurality of metal wires. 2. The photoelectric element packaging module according to claim 1, wherein the semiconductor light-emitting die is a light-emitting diode, a laser light-emitting diode, or a light-sensing die, and the method of fixing the semiconductor light-emitting die on the heat-conducting substrate includes using Silver glue or eutectic bonding method. 3. The photoelectric device packaging module as claimed in claim 2, wherein the recess of the dielectric layer is a hollow reflector, and the material of the dielectric layer is polyphthalamide or polybutylene. 4. The photoelectric element packaging module as claimed in claim 2, wherein the material of the heat dissipation substrate is copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper, tungsten-copper, aluminum silicon carbide , aluminum nitride, silicon, beryllium oxide, diamond or other metal materials with expansion coefficients close to the plurality of semiconductor light-emitting crystal grains. 5. The photoelectric element packaging module as claimed in claim 2, further comprising a light conversion material mixed in the transparent adhesive material, wherein the light conversion material is a phosphor powder, and the phosphor powder is a silicate, oxide family , nitride family or sulfide family. 6. A method for manufacturing a packaged module of a photoelectric element, the steps comprising: providing a heat dissipation substrate; forming a dielectric layer on the heat dissipation substrate; forming a printed circuit board on the dielectric layer; Fixing a plurality of semiconductor light-emitting crystal grains on the heat dissipation substrate; A plurality of metal wires electrically connect the semiconductor light-emitting die with the printed circuit board; and A transparent adhesive material is used to cover the plurality of semiconductor light-emitting crystal grains and the plurality of metal wires; Wherein the above-mentioned dielectric layer has a plurality of recesses to expose part of the heat dissipation substrate, the printed circuit board has a plurality of holes corresponding to the plurality of recesses of the dielectric layer, and the plurality of semiconductor light emitting The grains correspond within the recesses of the dielectric layer. 7. A method for manufacturing a packaging module of a photoelectric element, the steps comprising: providing a heat dissipation substrate; forming a dielectric layer on the heat dissipation substrate, wherein the dielectric layer includes a plurality of recesses; A plurality of flip-chip semiconductor light-emitting crystal grains are respectively placed in the recesses of the dielectric layer and fixed on the heat dissipation substrate; forming a printed circuit board with a plurality of holes, the holes corresponding to the recesses of the recesses of the dielectric layer covering the dielectric layer, exposing the flip-chip semiconductor light-emitting grains; A plurality of metal wires are electrically connected to the sub-substrate of the flip-chip semiconductor light-emitting die and the printed circuit board; and A transparent adhesive material is used to cover the plurality of flip-chip semiconductor light emitting chips and the plurality of metal wires. 8. The manufacturing method of an optoelectronic device packaging module as claimed in claim 6 or 7, wherein the semiconductor light-emitting die is a light-emitting diode, a laser light-emitting diode, or a light-sensing die, and the semiconductor light-emitting die is fixed on the heat-conducting substrate Some methods include the use of silver glue or eutectic bonding. 9. The method for manufacturing a photoelectric device packaging module as claimed in claim 8, wherein the recess of the dielectric layer is a hollow reflector, and the material of the dielectric layer is polyphthalamide or polybutylene. 10. The method for manufacturing a photoelectric element packaging module as claimed in claim 8, wherein the material of the heat dissipation substrate is copper, nickel, silver, lead, gold or the aforementioned metal alloys, or copper-molybdenum-copper, tungsten-copper, aluminum Silicon carbide, aluminum nitride, silicon, beryllium oxide, diamond or other metal materials with expansion coefficients close to the plurality of semiconductor light-emitting crystal grains. 11. The method for manufacturing an optoelectronic device packaging module as claimed in claim 8, further comprising mixing light conversion materials in the transparent adhesive, wherein the light conversion materials are phosphor powders, and the phosphor powders are silicates, oxides family, nitride family or sulfide family.

Images