CN101430508B - 为浸没光刻提供流体的装置和方法 - Google Patents
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Abstract
本发明的实施例是针对控制流体流量和压力以便为浸没光刻提供稳定条件的系统和方法。在浸没光刻过程期间,向透镜(22)和基片(16)之间的一空间(34)提供一流体。流体被供给到所说空间,并通过一个与所说空间流体连通的一个多孔元件(51)从所说空间回收流体。把多孔元件中的压力保持在多孔元件的起泡点以下,就能消除在流体回收期间由空气与流体相混合所产生的噪音。在一个实施例中,所说的方法包括:通过一个多孔元件经由一回收流体线路从所说空间抽吸流体;在从所说空间抽吸流体期间,把多孔元件中的流体压力保持在多孔元件的起泡点以下。
Description
本申请是中国专利申请No.200480023888.5(申请日:2004年7月16日;发明名称:为浸没光刻提供流体的装置和方法)的分案申请。
本申请基于下面美国临时专利申请,并要求享有这些美国临时专利申请的权益,这些美国临时专利申请为:2003年9月3日提交的No.60/500312和2004年2月2日提交的No.60/541329。在此引用这些美国临时专利申请的全文作为参考。
技术领域
本发明总体上涉及一种为浸没光刻(immersion lithography)提供流体的系统和方法,更具体地说,是一种控制流体流量和压力以便为浸没光刻提供稳定条件的系统和方法。
背景技术
曝光装置是一种精密组件,在半导体处理期间,它通常被用于把图像从一分划板转移到半导体晶片上。一种典型的曝光装置包括:一照明源;一分划板台组件,用于保持着一分划板;一光学组件;一晶片台组件,用于保持着半导体晶片;一测量系统;一控制系统。涂敷有抗蚀剂的晶片被放置在从一形成图案的掩膜发射的辐射路径中,并且被这种辐射曝光。当抗蚀剂被显影时,掩膜图案被转移到晶片上。在显微镜方法中,超紫外线(EUV)辐射通过一薄的样本而被传递到一个涂敷有抗蚀剂的板上。当抗蚀剂被显影时,就留下与样本结构相关的剖析形状。
浸没光刻是这样一种技术,它可以利用数值孔径大于1地进行曝光,从而能提高投射光刻的分辨率,这种分辨率要大于传统的“干式”系统的分辨率的理论最大值。通过对最终光学元件和涂敷有抗蚀剂的目标(即,晶片)之间的空间进行填充,浸没光刻就可以利用那些如果用其它方式就会在光-空气分界面处被在内部全部反射的光线进行曝光。采用与浸没流体(或抗蚀剂或透镜材料,最少的那一个)的折射率(index)一样高的数值孔径是可以的。与具有相同数值孔径的干式系统相比,通过浸没流体的折射率,流体浸没还增大了晶片的焦点深度,即在晶片的竖直位置的可容忍误差。因此,浸没光刻能提高分辨率,能从248nm转变为193nm。然而,不象曝光波长中的转变,采用浸没方式就无需研发新的光源、光学材料或涂敷层,并且允许在相同的波长采用与传统的光刻相同或相似的抗蚀剂。在只有最终光学元件和它的支座和晶片(以及可能还有支撑台)与浸没流体相接触的浸没系统中,在诸如污染控制的领域中已经为传统的工具研制了许多技术和设计,直接应用到浸没光刻。
浸没光刻的一个难题在于设计一个用于在最终光学元件和晶片之间输送和回收诸如水的流体的系统,以便为浸没光刻提供一个稳定的条件。
发明内容
本发明的实施例是针对控制流体流量和压力以便为浸没光刻提供稳定条件的系统和方法。在浸没光刻过程期间,向透镜和基片之间的一空间提供一流体。流体被供给到所说空间,并通过一个与所说空间流体连通的一个多孔元件从所说空间回收流体。把多孔元件中的压力保持在多孔元件的起泡点以下,就能消除在流体回收期间由空气与流体相混合所产生的噪音。起泡点是多孔元件的一个特征,它取决于多孔元件中的孔(最大孔)的尺寸大小以及流体与多孔元件所形成的接触角(它是基于多孔材料特性和流体特性的一个参数)。由于起泡点通常是一个非常低的压力,因此,这种低压的控制就成为一个重要的问题。
本发明的一个方面是针对一种在浸没光刻系统中从一透镜和一基片之间的一个空间回收流体的方法。该方法包括:通过一个多孔元件经由一条回收流线路从所说空间抽吸流体;在从所说空间吸取流体期间,把多孔元件中的压力保持在多孔元件的起泡点以下。
在某些实施例中,保持压力的步骤包括:提供一个被保持在一预定压力的溢流容器;把通过多孔元件经由回收流线路从所说空间回收的流体引导到溢流容器内。保持压力的步骤还包括:把流体从溢流容器虹吸到一收集箱内。流体在重力作用下被向下虹吸到设置在溢流容器下面的收集箱内。在另外一些实施例中,保持压力的步骤包括:提供一流体液位缓冲件;通过多孔元件经由一缓冲流线路把流体从所说空间吸到流体液位缓冲件;感测流体液位缓冲件处的压力或流体液位;根据所感测到的流体液位缓冲件处的压力或流体液位,对通过多孔元件经由回收流线路从所说空间吸取的流体进行控制。控制流体流的步骤包括:控制一个被设置在回收流线路中位于多孔元件下游的可变阀。在另外一些实施中,保持压力的步骤包括:提供一流体液位缓冲件;通过多孔元件经由一缓冲流线路把流体从所说空间抽吸到流体液位缓冲件;感测流体液位缓冲件处的压力或流体液位;根据所感测到的流体液位缓冲件处的压力或流体液位,控制通过多孔元件的回收流线路出口处的真空压力。控制真空压力的步骤包括:控制回收流线路出口处的一收集箱中的一真空调节器。
根据本发明的另一个方面,提供了一种在一浸没光刻系统中用于从一透镜和一基片之间的一空间回收流体的装置,该装置包括:一内部件,该内部件具有一透镜开口,以便容纳透镜的一部分,并且把透镜设置成与基片分离开,使其被所说空间间隔开,以便在透镜和基片之间的空间中接收流体。一外部件被设置在内部件周围,该外部件具有一多孔元件,该多孔元件与所说空间以及一流体回收出口流体连通,以便经由多孔元件把流体从所说空间抽吸到流体回收出口。一压力控制系统与多孔元件流体连通,以便在经由多孔元件从所说空间抽吸流体期间,把多孔元件的表面处的压力保持在多孔元件的起泡点以下。
在一些实施例中,压力控制系统包括:一溢流容器,该溢流容器与多孔元件流体连通;一真空调节器,用于调节溢流容器中的压力。一收集箱与溢流容器流体连通,并且位于该溢流容器的下方。在另一些实施例中,压力控制系统包括:一流体液位缓冲件,该流体液位缓冲件与多孔元件流体连通;一传感器,用于感测流体液位缓冲件处的压力或流体液位;一控制器,用于根据传感器感测到的传感器信号,调节通过流体回收出口从所说空间抽吸的流体的流量,在经过多孔元件从所说空间抽吸流体期间,以便把多孔元件的表面处的压力保持在多孔元件的起泡点以下。压力控制系统包括一阀,该阀被设置在流体回收出口的下游,并且控制器被用于控制该阀,以便调节通过流体回收出口从所说空间抽吸的流体的流量。在另外一些实施例中,压力控制系统包括:一收集箱,该收集箱与流体回收出口流体连通;一可控真空调节器,用于调节收集箱中的压力。控制器被用于控制可控真空调节器,以便通过控制收集箱中的压力来调节通过流体回收出口从所说空间抽吸到收集箱的流体的流量。
在一些特定的实施例中,内部件与外部件间隔开一中间间隔。内部件包括一内部腔室,该内部腔室形成透镜和基片之间的间隔的一部分,并且,内部件具有一些孔,这些孔被设置在内部腔室的上方,以便实现把流体引入到内部腔室内和把流体从内部腔室抽吸出中的至少一种功能。内部件具有一些孔,这些孔被设置在透镜开口的对置侧,以便把流体引入到内部腔室。内部件包括一对缓冲槽,这对缓冲槽沿着浸没光刻系统的扫描方向被设置在透镜开口的对置侧。内部件具有一些清洗孔,并且,所说的这对缓冲槽中的每个缓冲槽与至少一个清洗孔流体连通。多孔元件选自由网、多孔材料、其内具有蚀刻孔的元件所构成的组。
根据本发明的另外一个方面,提供了一种装置,该装置包括:一光学投射系统,该光学投射系统具有一最终光学元件,该光学投射系统用于把一图像投射到一工件上;一台,当图像被投射到工件上时,该台用于支撑着光学投射系统附近的工件。在最终光学元件和工件之间设置一间隔,该间隔被用于充填一浸没流体。一多孔材料被设置成邻近所说间隔,用于回收从所说间隔流出的流体。一控制系统被用于保持多孔材料上的压力。该压力等于或小于多孔材料的起泡点。
附图说明
图1是根据本发明实施例的浸没光刻的简化平面示意图;
图2是根据本发明一个实施例的在浸没光刻中用于流体输送和回收的一喷嘴的立体图;
图3是图2中的喷嘴的简化剖面图;
图4是图2中的喷嘴的内部件的剖面图;
图5是根据另一个实施例的喷嘴的简化剖面图;
图6是根据本发明一个实施例在浸没光刻系统中用于流体回收的压力控制系统的简化示意图;
图7是根据本发明另一个实施例在浸没光刻系统中用于流体回收的压力控制系统的简化示意图;
图8是根据本发明另一个实施例在浸没光刻系统中用于流体回收的压力控制系统的简化示意图;
图9是根据本发明另一个实施例在带有防止水停滞功能的浸没光刻系统中用于流体回收的压力控制系统的简化示意图。
具体实施方式
图1表示出了一个浸没光刻系统10,它包括:一分划板台12,在该分划板台上支撑有一分划板;一投射透镜14;一晶片16,该晶片被支撑在一晶片台18上。在投射透镜14的最终光学元件22的周围设置有一浸没装置20,以便在最终光学元件22和晶片16之间提供和回收流体,所说流体可以是诸如水或气体的流体,所说的浸没装置20有时也被称作喷头或喷嘴。在本实施例的浸没光刻系统10中,在扫描曝光期间,分划板和晶片16在各自的扫描方向上被同步移动。
图2和图3表示出了在浸没光刻中用于在最终光学元件22和晶片16之间输送和回收流体的装置或喷嘴20。图2表示出了喷嘴20的底视立体图,该喷嘴20包括一外部件30和一内部件32。内部件32形成一内部腔室34,以便在最终元件22和晶片16之间接收流体。内部件32具有一些孔38,以便流体流入和流出内部腔室34。如图2所示,在最终光学元件22的两侧都设置有一些孔38。内部件32具有一个环绕着内部腔室34的平坦部33。该平坦部33基本上平行于晶片16。最终光学元件22和晶片16的端面之间的距离D1要大于平坦部33和晶片16之间的距离D2。距离D1可以为1.0-5.0mm,距离D2可以为0.5-2.0mm。在另一个实施例中,距离D1基本上等于距离D2。内部件32还包括一对带有清洗孔42的缓冲件或缓冲槽40。缓冲件40被设置在平坦部33处或附近。缓冲件40位于最终光学元件22的对置侧。图4表示出了内部件32沿扫描方向44的剖面图。
通过一中间间隔或槽48把外部件30与内部件32间隔开,所说的中间间隔或槽48可被称作大气槽。外部件30包括一个或多个流体回收孔50,这些流体回收孔50被设置在最终光学元件22的对置侧。一个多孔元件51被设置在一槽或外部腔室53内,该槽或外部腔室53在内部件32周围延伸并且与这对流体回收孔50流体连通。多孔元件51可以是一网,也可以由具有孔的多孔材料制成,孔的尺寸大小通常约在50-200微米的范围内。例如,多孔元件51可以是丝网,该丝网包括由金属、塑料或类似制成的编织条或层状材料,多孔金属,多孔玻璃,多孔塑料,多孔陶瓷,或具有以化学方式蚀刻(例如通过光刻)的孔的片材。外部件30还包括一流体缓冲出口56和一流体回收出口58。如图5所示,在喷嘴20’的另一个实施例中,内部件32不与最终光学元件22接触,也不与最终光学元件22形成一密封,而是与最终光学元件22间隔开。然而,该间隔可允许流体被暴露于空气。
喷嘴20的一个特征在于它被制成两件式,即外部件30和内部件32。内部件32把流体保持在透镜和晶片表面之间,外部件30主要用于流体回收。在流体回收期间,振动可从外部件30通过多孔元件51被传递到光刻系统的其它部件,包括内部件32,该内部件32可被用于把一自动聚焦光束引导到晶片16。在外部件30和其上安装有外部件30的安装件之间可安装一减振材料,以便减小从外部件30传递的振动。此外,具有多孔元件的外部件30易于被污染,因此需要对其进行更换维护。把外部件30做成一个单独部件,有利于使维护更容易。与更换整个喷嘴20相反,这还可以减小更换外部件之后的重新调节和重新校准时间。如果喷嘴20被制造成两个单独部件,那么还可以改善喷嘴20的可制造性。应当知道,在一些可选实施例中,喷嘴20可以由一个单一件制成。
喷嘴20的另一个特征在于内部件32和外部件30之间的大气槽48。这条大气槽48用作一隔断边缘,如果流体回收速率快于流体供给速率,那么,该隔断边缘就阻止内部件30中的流体被外部件30上的多孔元件51吸出。在没有隔断边缘的情况下,必须要保持流体回收速率和流体供给速率之间的平衡,以便在扫描期间流体能被一直保持在内部件32内。设置有这种大气槽48,就可以把回收速率设置在最大值,以便在扫描期间使流体漏出外部件30减到最少。大气槽48还用作一缓冲件,以便在扫描期间流体流入和流出,从而使对水供给和回收的要求减到最小。
在浸没光刻的过程中,从一干燥状态,把一流体填充到投射透镜14和晶片16之间,在其它时间,对流体进行回收。例如,在一新的晶片开始曝光时,在开始曝光之前把流体完全充满内部件32的内部腔室34。在这个过程期间,理想地是,在投射透镜14和晶片16或其它光学路径例如自动聚焦光束之间没有气泡存在。内部件32的内部腔室中的流体供给被设置在该腔室中的最高点(通过孔38),从而使流体从上向下进行填充,这样就可以在填充过程期间把气泡驱逐出内部腔室。在这个实施例中(这组孔38位于一侧),流体被理想地从一侧开始供给,从而流体从一侧被填充到另一侧,这样就又可以把气泡逐出,以便避免夹杂一些空气。也可以采用其它的结构布置,只要流体从内侧向外填充即可。
有时,必须从内部件32的内部腔室完全回收流体。在图4中,在内部件32的每个缓冲件40中具有小孔42。当流体必须被完全回收时,这些孔42用于快速地进行流体回收或流体清洗。利用高真空,结合晶片台18中的少许移动,把流体从这些孔42吸出,这就使得可以在一合理时间回收全部流体。
内部件32具有两组或两排孔38,用于供给或回收流体。每排孔都能被独立地控制使其进行供给或回收流体。在两排孔都被选择用于供给流体的情况下,所有的流体都通过外部件30中的多孔元件51被回收。由于两排孔都被用于供给流体,因此,在内部腔室中的压力会增大,从而造成投射透镜14的最终光学元件22或晶片16或两者都产生变形。此外,横贯最终光学元件22的流体也会被限制,从而最终使得最终光学元件22和晶片16之间的温度升高,造成不良的影响。另一方面,如果一排孔被选择用于供给流体,而另一排孔被选择用于回收流体,那么,流体流就将横贯最终光学元件22被驱动,这样就使温度升高量减到最小。此外,与从两排孔来供给流体时所产生的压力相比,这种方式还能减小压力。在这种情况中,减小了需要通过多孔元件51来回收的流体,从而减弱了多孔元件的回收要求。在另外的喷嘴结构中,可以采用多重流体供给和回收,以便使性能优化。
在晶片台18的扫描移动期间(沿着图2中的扫描方向44),流体可以被拖入和拖出内部件32的内部腔室。当流体被拖出时,流体就通过外部件30中的多孔元件51被回收。当晶片台18沿着相反方向移动时,空气可以被拖入到内部件32的内部腔室34内。在这期间,缓冲件40中的流体以及从内部腔室34所供给的流体帮助再填充沿着扫描方向被拖动的流体,从而阻止空气进入内部腔室内。缓冲件40和多孔元件51一起作用,以便在晶片台18的扫描移动期间,使从外部件30泄漏出的流体以及拖入到内部件32内的空气减到最少。
在把多孔元件51中的压力保持在起泡点以下的情况下来通过多孔元件51回收流体,就能消除在流体回收期间由空气和流体的混合所产生的噪音。起泡点是多孔元件51的一个特征,它取决于多孔元件51中的孔(最大孔)的尺寸大小以及流体与多孔元件51所形成的接触角(它是基于多孔材料特性和流体特性的一个参数)。由于起泡点通常是一个非常低的压力(例如,大约1000帕斯卡),因此,这种低压的控制就成为一个重要的问题。图6-7表示出了在流体回收期间把压力保持在起泡点以下的两种具体方式。
在图6的压力控制系统100中,利用一真空调节器102,并借助于一个通过一回收流线路106(该回收流线路与流体缓冲出口57相连)与多孔元件51流体连通的溢流容器或箱104,在多孔元件51的表面处保持一个在起泡点以下的压力。多孔元件51的表面处的压力等于由真空调节器102保持的压力减去由多孔元件51上方的流体高度所产生的压力。利用溢流箱104来多孔元件51上方的流体的恒定高度,就可以容易地控制多孔元件51的表面处的压力。那些通过多孔元件51被回收的流体将溢出,并且沿着虹吸线路108被向下吸到一个被设置在溢流箱104下面的收集箱110内。一条可选的流通路径112被连接在溢流箱104和收集箱110之间,以便帮助平衡溢流箱104和收集箱110之间的压力,从而有利于流体沿着虹吸线路108流动。这种压力控制系统100的一个特征在于它是一个被动系统(passive system),无需控制。
在图7所示的压力控制系统120中,在流体液位缓冲件124处利用一真空调节器122来把多孔元件51的表面处的压力保持在起泡点以下,其中的流体液位缓冲件124通过一缓冲流线路126(该缓冲流线路与流体缓冲出口56相连)与多孔元件51流体连通。利用一压力变换器或一水位传感器128来测量流体液位缓冲件124处的压力或流体液位(fluid level)。然后把传感器信号用于反馈控制130,把传感器信号反馈到一阀132,该阀132被设置在(与流体回收出口58相连的)一回收流线路134中,该回收流线路134被连接在多孔元件51和一收集箱136之间。阀132可采用任何适合的阀,例如比例阀或可变阀。可变阀132可被调节,以便控制通过流体回收线路134流向收集箱136的流体流,从而把流体液位缓冲件124的压力或流体液位保持在一个预定值。收集箱136处于一个受一高真空调节器138控制的相对较高的真空下,以便进行流体回收。在这种流体控制系统120中,无需溢流箱,并且收集箱136可以被设置在该系统中的任何地方,无需被设置在溢流箱下面。理想地是,在流体回收线路134中设置一开/关阀140,当不需要流体回收时,就把该开/关阀140关闭。
在图8中,压力控制系统160类似于图7所示的系统120,并且相同的附图标记表示相同的部件。这个系统160不采用阀132来对流体回收进行反馈控制,而是采用一可控制真空调节器162来对流体回收进行反馈控制。真空调节器162典型的是可电子控制的,以便根据来自压力变换器或水位传感器128的传感器信号来调节收集箱136中的真空压力。真空调节器162可被调节,以便控制通过流体回收线路134流到收集箱136的流体流,从而把压力或流体液位缓冲件124的流体液位保持在一预定值。当不需要回收流体时,就关闭流体回收线路134中的开/关阀140。
图9表示出了根据本发明另外一实施例的一种在浸没光刻系统中用于回收流体的压力控制系统180,这种压力控制系统能防止水发生停滞。这种压力控制系统180与图7中的系统120相类似,并且相同的部件采用相同的附图标记来表示。此外,流体液位缓冲件124与水供给或水回收器182流体连通,以便向流体液位缓冲件124供给水或从流体液位缓冲件124回收水,从而防止水停滞。可以利用一可选的泵或一类似的移动部件在流体液位缓冲件124和水供给或回收器182之间引导流动。水或流体停滞时间过长,就可能在水中滋生细菌/霉菌。在正常操作下,流体液位缓冲件124处的水是停滞的,因为从网51回收的水将经过位于网高度的小管流到收集箱136。在正常操作期间,通过把流体引入或引出流体液位缓冲件124,就可以防止滋生细菌/霉菌的问题。
应当知道,上面的描述只是解释性的,并不是限制性的。对于本领域的技术人员而言,一旦阅读上面的描述,许多实施例就会是很显然的。因此,本发明的范围并不是参照上述描述来确定的,而是参照所附的权利要求以及它的等同范围来确定的。
此外,本发明还能被用于双台式光刻系统。例如,在美国专利US6262796和US6341007中就公开了双台式光刻系统,在此引用这些专利文件的全文作为参考。
Claims (7)
1.一种用于浸没光刻的装置,包括:
光学投射系统,该光学投射系统具有一最终光学元件,该光学投射系统用于把一图像投射到一工件上;
台,当图像被投射到工件上时,该台用于支撑着邻近光学投射系统的所述工件;
喷嘴,用于向最终光学元件和工件之间的间隔中提供一浸没流体;
其中,所述喷嘴具有:一内部腔室,用于把浸没流体保持在所述间隔中;一外部腔室,用于回收那些流出内部腔室的浸没流体;并且
其中,喷嘴还包括一多孔元件,该多孔元件被设置在外部腔室中。
2.根据权利要求1所述的装置,其中,喷嘴还包括一槽,该槽位于内部腔室和外部腔室之间。
3.根据权利要求1所述的装置,其中,多孔元件选自由网、多孔材料、其内具有蚀刻孔的元件所组成的组。
4.根据权利要求1所述的装置,其中,内部腔室形成最终光学元件和工件之间的所述间隔的一部分,并且喷嘴具有一些孔,这些孔被设置在内部腔室上方,以便实现把流体引入到内部腔室和从内部腔室抽吸流体中的至少一种功能。
5.根据权利要求4所述的装置,其中,所述的这些孔被设置在最终光学元件的对置侧。
6.根据权利要求1所述的装置,其中,喷嘴还包括一对缓冲槽,这对缓冲槽沿着所述台相对于光学投射系统的移动方向被设置在所述最终光学元件的对置侧。
7.根据权利要求6所述的装置,其中,喷嘴还包括一些清洗孔,并且所述的这对缓冲槽中的每条缓冲槽都与至少一个所述清洗孔流体连通。
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Families Citing this family (223)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG2010050110A (en) | 2002-11-12 | 2014-06-27 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2004053955A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR20050062665A (ko) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
AU2003289271A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP2466624B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
KR20050110033A (ko) | 2003-03-25 | 2005-11-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101176817B1 (ko) | 2003-04-07 | 2012-08-24 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
KR101121655B1 (ko) | 2003-04-10 | 2012-03-09 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
EP3062152B1 (en) | 2003-04-10 | 2017-12-20 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
SG139736A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
WO2004093130A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR20060009356A (ko) | 2003-05-15 | 2006-01-31 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
TWI511181B (zh) | 2003-05-23 | 2015-12-01 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
TW200509205A (en) | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
KR101728664B1 (ko) | 2003-05-28 | 2017-05-02 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3401946A1 (en) | 2003-06-13 | 2018-11-14 | Nikon Corporation | Exposure apparatus and device manufacturing method |
DE602004024782D1 (de) | 2003-06-19 | 2010-02-04 | Nippon Kogaku Kk | Belichtungseinrichtung und bauelementeherstellungsverfahren |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP3179309A1 (en) | 2003-07-08 | 2017-06-14 | Nikon Corporation | Wafer table for immersion lithography |
EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1643543B1 (en) | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
EP3346485A1 (en) | 2003-07-25 | 2018-07-11 | Nikon Corporation | Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
KR101343720B1 (ko) | 2003-07-28 | 2013-12-20 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법 |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005022616A1 (ja) | 2003-08-29 | 2005-03-10 | Nikon Corporation | 露光装置及びデバイス製造方法 |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101430508B (zh) | 2003-09-03 | 2011-08-10 | 株式会社尼康 | 为浸没光刻提供流体的装置和方法 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP2320273B1 (en) | 2003-09-29 | 2015-01-21 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing a device |
ATE509367T1 (de) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | Belichtungsgerät, substrattrageverfahren, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
WO2005036623A1 (ja) | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
JP2005136364A (ja) | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
WO2005041276A1 (ja) | 2003-10-28 | 2005-05-06 | Nikon Corporation | 露光装置、露光方法、デバイスの製造方法 |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
KR101431944B1 (ko) | 2003-12-03 | 2014-09-22 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품 |
KR101681852B1 (ko) | 2003-12-15 | 2016-12-01 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
KR101377815B1 (ko) | 2004-02-03 | 2014-03-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101851511B1 (ko) | 2004-03-25 | 2018-04-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2490248A3 (en) | 2004-04-19 | 2018-01-03 | Nikon Corporation | Exposure apparatus and device manufacturing method |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
CN101776850B (zh) | 2004-06-09 | 2013-03-20 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
JP4543767B2 (ja) * | 2004-06-10 | 2010-09-15 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
CN100570822C (zh) | 2004-06-10 | 2009-12-16 | 尼康股份有限公司 | 曝光装置、曝光方法、以及元件制造方法 |
SG10201607447RA (en) | 2004-06-10 | 2016-10-28 | Nikon Corp | Exposure equipment, exposure method and device manufacturing method |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
JP4623095B2 (ja) | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
US7426014B2 (en) | 2004-07-01 | 2008-09-16 | Nikon Corporation | Dynamic fluid control system for immersion lithography |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
ATE441937T1 (de) | 2004-07-12 | 2009-09-15 | Nikon Corp | Belichtungsgerät und bauelemente- herstellungsverfahren |
US8305553B2 (en) | 2004-08-18 | 2012-11-06 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101285963B1 (ko) | 2004-09-17 | 2013-07-12 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7522261B2 (en) | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) * | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7423720B2 (en) | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7491661B2 (en) | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG124351A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101427056B1 (ko) | 2005-01-31 | 2014-08-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
KR101105784B1 (ko) | 2005-02-10 | 2012-01-17 | 에이에스엠엘 네델란즈 비.브이. | 침지 액체, 노광 장치, 및 노광 프로세스 |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4072543B2 (ja) * | 2005-03-18 | 2008-04-09 | キヤノン株式会社 | 液浸露光装置及びデバイス製造方法 |
US7330238B2 (en) | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
US7411654B2 (en) * | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8089608B2 (en) * | 2005-04-18 | 2012-01-03 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317507B2 (en) | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7468779B2 (en) | 2005-06-28 | 2008-12-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7751026B2 (en) * | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
US7580112B2 (en) | 2005-08-25 | 2009-08-25 | Nikon Corporation | Containment system for immersion fluid in an immersion lithography apparatus |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
TWI397945B (zh) * | 2005-11-14 | 2013-06-01 | 尼康股份有限公司 | A liquid recovery member, an exposure apparatus, an exposure method, and an element manufacturing method |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007201252A (ja) * | 2006-01-27 | 2007-08-09 | Canon Inc | 露光装置及びデバイス製造方法 |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
WO2007105645A1 (ja) | 2006-03-13 | 2007-09-20 | Nikon Corporation | 露光装置、メンテナンス方法、露光方法及びデバイス製造方法 |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
EP2535744A3 (en) | 2006-04-03 | 2013-10-09 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
TWI439813B (zh) | 2006-05-10 | 2014-06-01 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
US20070273856A1 (en) * | 2006-05-25 | 2007-11-29 | Nikon Corporation | Apparatus and methods for inhibiting immersion liquid from flowing below a substrate |
US7532309B2 (en) * | 2006-06-06 | 2009-05-12 | Nikon Corporation | Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid |
US20080043211A1 (en) * | 2006-08-21 | 2008-02-21 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
JP5120377B2 (ja) | 2006-09-29 | 2013-01-16 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US20080100812A1 (en) * | 2006-10-26 | 2008-05-01 | Nikon Corporation | Immersion lithography system and method having a wafer chuck made of a porous material |
US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
US8208116B2 (en) | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
JP5055971B2 (ja) | 2006-11-16 | 2012-10-24 | 株式会社ニコン | 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法 |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US8068208B2 (en) * | 2006-12-01 | 2011-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for improving immersion scanner overlay performance |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8004651B2 (en) * | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8237911B2 (en) * | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US20080225248A1 (en) * | 2007-03-15 | 2008-09-18 | Nikon Corporation | Apparatus, systems and methods for removing liquid from workpiece during workpiece processing |
US20080231823A1 (en) * | 2007-03-23 | 2008-09-25 | Nikon Corporation | Apparatus and methods for reducing the escape of immersion liquid from immersion lithography apparatus |
US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8068209B2 (en) | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8300207B2 (en) | 2007-05-17 | 2012-10-30 | Nikon Corporation | Exposure apparatus, immersion system, exposing method, and device fabricating method |
US20090122282A1 (en) * | 2007-05-21 | 2009-05-14 | Nikon Corporation | Exposure apparatus, liquid immersion system, exposing method, and device fabricating method |
US8164736B2 (en) | 2007-05-29 | 2012-04-24 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing device |
US7576833B2 (en) * | 2007-06-28 | 2009-08-18 | Nikon Corporation | Gas curtain type immersion lithography tool using porous material for fluid removal |
US8681308B2 (en) * | 2007-09-13 | 2014-03-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5369443B2 (ja) | 2008-02-05 | 2013-12-18 | 株式会社ニコン | ステージ装置、露光装置、露光方法、及びデバイス製造方法 |
US8610873B2 (en) | 2008-03-17 | 2013-12-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
US8289497B2 (en) | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
EP2131241B1 (en) | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
US8421993B2 (en) * | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置の動作方法 |
US20100045949A1 (en) * | 2008-08-11 | 2010-02-25 | Nikon Corporation | Exposure apparatus, maintaining method and device fabricating method |
NL2003226A (en) | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
JP2010098172A (ja) * | 2008-10-17 | 2010-04-30 | Canon Inc | 液体回収装置、露光装置及びデバイス製造方法 |
US8477284B2 (en) * | 2008-10-22 | 2013-07-02 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
US8634055B2 (en) * | 2008-10-22 | 2014-01-21 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
US20100283979A1 (en) * | 2008-10-31 | 2010-11-11 | Nikon Corporation | Exposure apparatus, exposing method, and device fabricating method |
JP5001343B2 (ja) * | 2008-12-11 | 2012-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法 |
US8896806B2 (en) * | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US20100196832A1 (en) | 2009-01-30 | 2010-08-05 | Nikon Corporation | Exposure apparatus, exposing method, liquid immersion member and device fabricating method |
US20100220301A1 (en) * | 2009-02-27 | 2010-09-02 | Nikon Corporation | Apparatus and method to control liquid stagnation in immersion liquid recovery |
WO2010103822A1 (ja) | 2009-03-10 | 2010-09-16 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
US8953143B2 (en) * | 2009-04-24 | 2015-02-10 | Nikon Corporation | Liquid immersion member |
US20100323303A1 (en) * | 2009-05-15 | 2010-12-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, and device fabricating method |
JP5016705B2 (ja) | 2009-06-09 | 2012-09-05 | エーエスエムエル ネザーランズ ビー.ブイ. | 流体ハンドリング構造 |
JP2011013321A (ja) * | 2009-06-30 | 2011-01-20 | Hoya Corp | フォトマスクブランクの製造方法、フォトマスクの製造方法及び塗布装置 |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
US20110222031A1 (en) * | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
US20120012191A1 (en) * | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
US9329496B2 (en) | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
US20130135594A1 (en) | 2011-11-25 | 2013-05-30 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
US20130169944A1 (en) | 2011-12-28 | 2013-07-04 | Nikon Corporation | Exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
CN102937777B (zh) * | 2012-11-12 | 2014-07-30 | 浙江大学 | 用于浸没式光刻机的气密封和气液隔离装置 |
US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
JP6119242B2 (ja) | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
KR102230319B1 (ko) | 2013-10-08 | 2021-03-19 | 가부시키가이샤 니콘 | 액침 부재, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US10551748B2 (en) | 2014-12-19 | 2020-02-04 | Asml Netherlands B.V. | Fluid handling structure, a lithographic apparatus and a device manufacturing method |
TWI557274B (zh) * | 2016-04-11 | 2016-11-11 | 嘉聯益科技股份有限公司 | 基材蝕刻處理方法 |
KR102446678B1 (ko) * | 2017-12-15 | 2022-09-23 | 에이에스엠엘 네델란즈 비.브이. | 유체 핸들링 구조체, 리소그래피 장치, 유체 핸들링 구조체를 사용하는 방법 및 리소그래피 장치를 사용하는 방법 |
US11007526B2 (en) * | 2018-07-06 | 2021-05-18 | Qorvo Us, Inc. | Capless sample well port for a cartridge |
US10877378B2 (en) * | 2018-09-28 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vessel for extreme ultraviolet radiation source |
KR102747298B1 (ko) * | 2019-07-22 | 2024-12-26 | 엘지전자 주식회사 | 급수 레벨 검출 장치 및 방법 |
EP4032064A1 (en) | 2019-09-19 | 2022-07-27 | PPG Industries Ohio Inc. | Systems and methods for mapping coatings to a spatial appearance space |
EP4062233A1 (en) | 2019-11-18 | 2022-09-28 | ASML Netherlands B.V. | A fluid handling system, method and lithographic apparatus |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
CN112558432B (zh) * | 2020-12-18 | 2022-07-15 | 浙江启尔机电技术有限公司 | 一种浸液供给系统及其浸没流场撤除方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1501173A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Family Cites Families (201)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
EP0023231B1 (de) * | 1979-07-27 | 1982-08-11 | Tabarelli, Werner, Dr. | Optisches Lithographieverfahren und Einrichtung zum Kopieren eines Musters auf eine Halbleiterscheibe |
FR2474708B1 (fr) * | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) * | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) * | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) * | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH056417A (ja) * | 1991-06-20 | 1993-01-14 | Hitachi Ltd | 図形指定システム |
JP2919649B2 (ja) * | 1991-06-27 | 1999-07-12 | 富士写真フイルム株式会社 | 画像処理装置 |
JPH0520299A (ja) * | 1991-07-12 | 1993-01-29 | Chubu Nippon Denki Software Kk | カナキー項目の作成処理方式 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3258469B2 (ja) * | 1993-10-15 | 2002-02-18 | 日本特殊陶業株式会社 | 気液分離装置 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6001189A (en) * | 1996-09-30 | 1999-12-14 | Micron Technology, Inc. | Method for reducing gaseous species of contamination in wet processes |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
IL130137A (en) | 1996-11-28 | 2003-07-06 | Nikon Corp | Exposure apparatus and an exposure method |
DE69829614T2 (de) | 1997-03-10 | 2006-03-09 | Asml Netherlands B.V. | Lithographiegerät mit einer positioniervorrichtung mit zwei objekthaltern |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
US6152162A (en) * | 1998-10-08 | 2000-11-28 | Mott Metallurgical Corporation | Fluid flow controlling |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
KR20020006369A (ko) * | 2000-07-12 | 2002-01-19 | 김광교 | 약액 회수 시스템 및 회수 방법 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
US6488039B1 (en) * | 2000-09-27 | 2002-12-03 | Chartered Semiconductor Manufacturing | State of the art constant flow device |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
TW525303B (en) * | 2001-06-06 | 2003-03-21 | Macronix Int Co Ltd | MOS transistor and method for producing the same |
US6954255B2 (en) | 2001-06-15 | 2005-10-11 | Canon Kabushiki Kaisha | Exposure apparatus |
KR20030025436A (ko) * | 2001-09-20 | 2003-03-29 | 삼성전자주식회사 | 반도체 제조용 포토레지스트 공급시스템 |
KR20030070391A (ko) * | 2002-02-25 | 2003-08-30 | 주식회사 하이닉스반도체 | 반도체 제조 공정에서의 캐미컬 공급 시스템 및 그 제어방법 |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
CN100462844C (zh) | 2002-08-23 | 2009-02-18 | 株式会社尼康 | 投影光学系统、微影方法、曝光装置及使用此装置的方法 |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US7252097B2 (en) * | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
CN101349876B (zh) * | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) * | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
KR20050062665A (ko) | 2002-12-10 | 2005-06-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
WO2004053955A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
ATE424026T1 (de) * | 2002-12-13 | 2009-03-15 | Koninkl Philips Electronics Nv | Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht |
KR100971441B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
TWI247339B (en) | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
EP2466624B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
JP4352930B2 (ja) * | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101176817B1 (ko) * | 2003-04-07 | 2012-08-24 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
KR20110104084A (ko) * | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
KR101121655B1 (ko) | 2003-04-10 | 2012-03-09 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
EP3062152B1 (en) * | 2003-04-10 | 2017-12-20 | Nikon Corporation | Environmental system including vaccum scavenge for an immersion lithography apparatus |
JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG139736A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
JP2004320016A (ja) * | 2003-04-11 | 2004-11-11 | Nikon Corp | 液浸リソグラフィシステム |
WO2004093130A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Cleanup method for optics in immersion lithography |
KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
EP2270599A1 (en) * | 2003-05-13 | 2011-01-05 | ASML Netherlands BV | Lithographic apparatus |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1480065A3 (en) * | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) * | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) * | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1491956B1 (en) * | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1494074A1 (en) * | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
EP2264531B1 (en) * | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
JP4729876B2 (ja) * | 2003-07-09 | 2011-07-20 | 株式会社ニコン | 露光装置、露光方法、並びにデバイス製造方法 |
JP4835155B2 (ja) * | 2003-07-09 | 2011-12-14 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7738074B2 (en) * | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005045082A (ja) * | 2003-07-24 | 2005-02-17 | Sony Corp | 露光装置 |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7061578B2 (en) * | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
KR101915921B1 (ko) * | 2003-08-21 | 2019-01-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) * | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
CN101430508B (zh) * | 2003-09-03 | 2011-08-10 | 株式会社尼康 | 为浸没光刻提供流体的装置和方法 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
WO2005041276A1 (ja) * | 2003-10-28 | 2005-05-06 | Nikon Corporation | 露光装置、露光方法、デバイスの製造方法 |
JP2007525824A (ja) | 2003-11-05 | 2007-09-06 | ディーエスエム アイピー アセッツ ビー.ブイ. | マイクロチップを製造するための方法および装置 |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
KR100965330B1 (ko) | 2003-12-15 | 2010-06-22 | 칼 짜이스 에스엠티 아게 | 적어도 한 개의 액체 렌즈를 가진 마이크로리소그래피 투사대물렌즈로서의 대물렌즈 |
JP5106858B2 (ja) | 2003-12-15 | 2012-12-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 高開口数と平面状端面とを有する投影対物レンズ |
WO2005106589A1 (en) | 2004-05-04 | 2005-11-10 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus and immersion liquid therefore |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN1910494B (zh) * | 2004-01-14 | 2011-08-10 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
CN101793993B (zh) | 2004-01-16 | 2013-04-03 | 卡尔蔡司Smt有限责任公司 | 光学元件、光学布置及系统 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
EP1706793B1 (en) | 2004-01-20 | 2010-03-03 | Carl Zeiss SMT AG | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
EP1723467A2 (en) | 2004-02-03 | 2006-11-22 | Rochester Institute of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7295283B2 (en) * | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2490248A3 (en) * | 2004-04-19 | 2018-01-03 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7271878B2 (en) * | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) * | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) * | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1747499A2 (en) * | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7091502B2 (en) * | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20170028451A (ko) | 2004-05-17 | 2017-03-13 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) * | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4655763B2 (ja) * | 2004-06-04 | 2011-03-23 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
WO2005119369A1 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | Projection system with compensation of intensity variatons and compensation element therefor |
US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
SG10201607447RA (en) * | 2004-06-10 | 2016-10-28 | Nikon Corp | Exposure equipment, exposure method and device manufacturing method |
JP4515335B2 (ja) * | 2004-06-10 | 2010-07-28 | 株式会社ニコン | 露光装置、ノズル部材、及びデバイス製造方法 |
US7481867B2 (en) | 2004-06-16 | 2009-01-27 | Edwards Limited | Vacuum system for immersion photolithography |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7133114B2 (en) * | 2004-09-20 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7379155B2 (en) * | 2004-10-18 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG124359A1 (en) * | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US20080003069A1 (en) * | 2006-06-16 | 2008-01-03 | Harper David J | Apparatus and method for removing inner member of plastic pipe joint |
US7576833B2 (en) * | 2007-06-28 | 2009-08-18 | Nikon Corporation | Gas curtain type immersion lithography tool using porous material for fluid removal |
-
2004
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- 2004-07-16 EP EP17156010.5A patent/EP3223074A1/en not_active Withdrawn
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