JP5106858B2 - 高開口数と平面状端面とを有する投影対物レンズ - Google Patents
高開口数と平面状端面とを有する投影対物レンズ Download PDFInfo
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- JP5106858B2 JP5106858B2 JP2006543484A JP2006543484A JP5106858B2 JP 5106858 B2 JP5106858 B2 JP 5106858B2 JP 2006543484 A JP2006543484 A JP 2006543484A JP 2006543484 A JP2006543484 A JP 2006543484A JP 5106858 B2 JP5106858 B2 JP 5106858B2
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Images
Classifications
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- G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
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- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B13/00—Measuring arrangements characterised by the use of fluids
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/082—Catadioptric systems using three curved mirrors
- G02B17/0828—Catadioptric systems using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Claims (13)
- 投影対物レンズの物体平面内に配置されるパターンを投影対物レンズの像平面上に結像させる、マイクロリソグラフィー投影露光装置に適する投影対物レンズにおいて:
投影対物レンズの動作波長での放射に対して透明性を有する複数個の光学素子からなり、少なくとも1個の光学素子は、前記動作波長において屈折率n≧1.6を有する高屈折率材料により製作される高屈折率光学素子であり、
前記像面に最も近い最後の光学素子を有し、 収差に関して、最後の光学素子と像平面との間における像側作動距離が、1を超える屈折率を有する浸漬媒質によって満たされるように適合せしめられる浸漬対物レンズとして設計され、
前記最後の光学素子は、分割界面に沿って互いに光学的に接触する少なくとも2個の光学素子によって構成され、分割面は、湾曲せしめられ、
前記最後の光学素子を形成する前記光学素子の少なくとも1個は、屈折率n>1.6を有する高屈折率材料によって構成される投影対物レンズ。 - 前記高屈折率材料は、前記動作波長において屈折率n≧1.8を有する請求項1に記載の投影対物レンズ。
- 前記高屈折率材料は、サファイアである請求項1または2に記載の投影対物レンズ。
- 前記高屈折率材料は、二酸化ゲルマニウムである請求項1または2に記載の投影対物レンズ。
- 第1の高屈折率光学素子と、第1の高屈折率光学素子と同一の材料の少なくとも1個の第2の高屈折率光学素子とを有し、前記第1の高屈折率光学素子と前記第2の高屈折率光学素子との各々は、各光学素子の複屈折の配向を定義する複屈折を示す高屈折率材料により製作され、前記第1および第2の高屈折率光学素子は、前記複屈折の前記配向に関して相違して配設されて、前記高屈折率光学素子によりもたらされる複屈折の効果が少なくとも部分的に補償される前記請求項1〜4の1項に記載の投影対物レンズ。
- 前記最後の光学素子は、平凸レンズとして整形され、分割面は、該分割面において接触する両光学素子が同様の屈折力を有するレンズ部分となるように湾曲せしめられる請求項1に記載の投影対物レンズ。
- 前記動作波長において1.4を超える屈折率を有する浸漬液に適合せしめられる請求項1に記載の投影対物レンズ。
- 193nmの動作波長用に設計され、前記浸漬液は、シクロヘキサンである請求項7に記載の投影対物レンズ。
- 像側開口数NAが1.3を超える先行する請求項1〜8の1項に記載の投影対物レンズ。
- 前記像平面に最も近い位置に配置される瞳面は、前記像平面に最も近い極大ビーム直径の領域と前記像平面との間において収束ビームの領域内に配置される先行する請求項1〜9の1項に記載の投影対物レンズ。
- 投影対物レンズの物体平面内に配置されるマスク上に設けられたパターンを前記投影対物レンズの像平面内に配置される基板上に結像させるマイクロリソグラフィー投影露光方法であって、先行する請求項1〜10のいずれかの1項に記載のマイクロリソグラフィー投影対物レンズが用いられ、浸漬液が、前記マイクロリソグラフィー投影対物レンズの最後のレンズと露光対象の前記基板との間において導入される方法。
- 前記投影対物レンズの動作波長において1.4を超える屈折率を有する浸漬液が用いられる請求項11に記載の方法。
- 前記浸漬液は、前記動作波長において1.5を超える屈折率を有する請求項12に記載の方法。
Applications Claiming Priority (25)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/734,623 US6995930B2 (en) | 1999-12-29 | 2003-12-15 | Catadioptric projection objective with geometric beam splitting |
US10/734,623 | 2003-12-15 | ||
US53062303P | 2003-12-19 | 2003-12-19 | |
US60/530,623 | 2003-12-19 | ||
US53097803P | 2003-12-22 | 2003-12-22 | |
US60/530,978 | 2003-12-22 | ||
US53624804P | 2004-01-14 | 2004-01-14 | |
US60/536,248 | 2004-01-14 | ||
US54496704P | 2004-02-13 | 2004-02-13 | |
US60/544,967 | 2004-02-13 | ||
US56800604P | 2004-05-04 | 2004-05-04 | |
US60/568,006 | 2004-05-04 | ||
US58750404P | 2004-07-14 | 2004-07-14 | |
US60/587,504 | 2004-07-14 | ||
US59177504P | 2004-07-27 | 2004-07-27 | |
US60/591,775 | 2004-07-27 | ||
US59220804P | 2004-07-29 | 2004-07-29 | |
US60/592,208 | 2004-07-29 | ||
US61282304P | 2004-09-24 | 2004-09-24 | |
US60/612,823 | 2004-09-24 | ||
US61767404P | 2004-10-13 | 2004-10-13 | |
US60/617,674 | 2004-10-13 | ||
DE102004051730.4 | 2004-10-22 | ||
DE102004051730 | 2004-10-22 | ||
PCT/EP2004/014062 WO2005059617A2 (en) | 2003-12-15 | 2004-12-10 | Projection objective having a high aperture and a planar end surface |
Publications (2)
Publication Number | Publication Date |
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JP2007514192A JP2007514192A (ja) | 2007-05-31 |
JP5106858B2 true JP5106858B2 (ja) | 2012-12-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006543484A Expired - Fee Related JP5106858B2 (ja) | 2003-12-15 | 2004-12-10 | 高開口数と平面状端面とを有する投影対物レンズ |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1697798A2 (ja) |
JP (1) | JP5106858B2 (ja) |
KR (1) | KR101200654B1 (ja) |
WO (1) | WO2005059617A2 (ja) |
Families Citing this family (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3977324B2 (ja) | 2002-11-12 | 2007-09-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置 |
TWI251127B (en) | 2002-11-12 | 2006-03-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP3301511A1 (en) | 2003-02-26 | 2018-04-04 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP1610361B1 (en) | 2003-03-25 | 2014-05-21 | Nikon Corporation | Exposure system and device production method |
ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
SG2014015184A (en) | 2003-04-10 | 2015-06-29 | Nippon Kogaku Kk | Environmental system including vacuum scavange for an immersion lithography apparatus |
WO2004093160A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
KR101431938B1 (ko) | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
KR101304105B1 (ko) | 2003-04-11 | 2013-09-05 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI612557B (zh) | 2003-05-23 | 2018-01-21 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
TW201806001A (zh) | 2003-05-23 | 2018-02-16 | 尼康股份有限公司 | 曝光裝置及元件製造方法 |
KR20150036794A (ko) | 2003-05-28 | 2015-04-07 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI467634B (zh) | 2003-06-13 | 2015-01-01 | 尼康股份有限公司 | An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method |
WO2004114380A1 (ja) | 2003-06-19 | 2004-12-29 | Nikon Corporation | 露光装置及びデバイス製造方法 |
JP4697138B2 (ja) | 2003-07-08 | 2011-06-08 | 株式会社ニコン | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
ATE513309T1 (de) | 2003-07-09 | 2011-07-15 | Nikon Corp | Belichtungsvorrichtung und verfahren zur bauelementeherstellung |
KR101296501B1 (ko) | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4844123B2 (ja) | 2003-07-09 | 2011-12-28 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
WO2005010960A1 (ja) | 2003-07-25 | 2005-02-03 | Nikon Corporation | 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法 |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
KR101599649B1 (ko) | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101303536B (zh) | 2003-08-29 | 2011-02-09 | 株式会社尼康 | 曝光装置和器件加工方法 |
KR101288140B1 (ko) | 2003-09-03 | 2013-07-19 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
SG2014014971A (en) | 2003-09-29 | 2014-04-28 | Nippon Kogaku Kk | Exposure apparatus, exposure method, and device manufacturing method |
KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
ATE509367T1 (de) | 2003-10-08 | 2011-05-15 | Zao Nikon Co Ltd | Belichtungsgerät, substrattrageverfahren, belichtungsverfahren und verfahren zur herstellung einer vorrichtung |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7528929B2 (en) | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG148993A1 (en) | 2003-12-03 | 2009-01-29 | Nikon Corp | Exposure apparatus, exposure method, method for producing device, and optical part |
DE602004030481D1 (de) | 2003-12-15 | 2011-01-20 | Nippon Kogaku Kk | Bühnensystem, belichtungsvorrichtung und belichtungsverfahren |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
ATE459898T1 (de) | 2004-01-20 | 2010-03-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
CN100592210C (zh) | 2004-02-13 | 2010-02-24 | 卡尔蔡司Smt股份公司 | 微平版印刷投影曝光装置的投影物镜 |
DE102004013886A1 (de) | 2004-03-16 | 2005-10-06 | Carl Zeiss Smt Ag | Verfahren zur Mehrfachbelichtung, Mikrolithografie-Projektionsbelichtungsanlage und Projektionssystem |
KR101607035B1 (ko) | 2004-03-25 | 2016-04-11 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
WO2005111722A2 (en) | 2004-05-04 | 2005-11-24 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119371A1 (en) * | 2004-06-01 | 2005-12-15 | E.I. Dupont De Nemours And Company | Ultraviolet-transparent alkanes and processes using same in vacuum and deep ultraviolet applications |
CN101833247B (zh) | 2004-06-04 | 2013-11-06 | 卡尔蔡司Smt有限责任公司 | 微光刻投影曝光系统的投影物镜的光学测量的测量系统 |
CN108490741A (zh) | 2004-06-09 | 2018-09-04 | 株式会社尼康 | 曝光装置及元件制造方法 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4894515B2 (ja) | 2004-07-12 | 2012-03-14 | 株式会社ニコン | 露光装置、デバイス製造方法、及び液体検出方法 |
JP4599936B2 (ja) | 2004-08-17 | 2010-12-15 | 株式会社ニコン | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
JP4983257B2 (ja) | 2004-08-18 | 2012-07-25 | 株式会社ニコン | 露光装置、デバイス製造方法、計測部材、及び計測方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006114839A (ja) | 2004-10-18 | 2006-04-27 | Nikon Corp | 投影光学系、露光装置、および露光方法 |
JP4980922B2 (ja) | 2004-11-18 | 2012-07-18 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置及びマイクロリソグラフィ投影露光装置の像面湾曲を修正するための方法 |
US7397533B2 (en) | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101440617B1 (ko) | 2005-01-31 | 2014-09-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
DE102006013560A1 (de) | 2005-04-19 | 2006-10-26 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung |
JP2006309220A (ja) | 2005-04-29 | 2006-11-09 | Carl Zeiss Smt Ag | 投影対物レンズ |
EP1746463A2 (de) * | 2005-07-01 | 2007-01-24 | Carl Zeiss SMT AG | Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv |
WO2007017089A1 (en) | 2005-07-25 | 2007-02-15 | Carl Zeiss Smt Ag | Projection objective of a microlithographic projection exposure apparatus |
DE102006025044A1 (de) | 2005-08-10 | 2007-02-15 | Carl Zeiss Smt Ag | Abbildungssystem, insbesondere Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
CN101243359B (zh) | 2005-08-10 | 2011-04-06 | 卡尔蔡司Smt有限责任公司 | 成像系统、特别是显微光刻投影曝光设备的投影物镜 |
JPWO2007034838A1 (ja) | 2005-09-21 | 2009-03-26 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7433050B2 (en) | 2005-10-05 | 2008-10-07 | Nikon Corporation | Exposure apparatus and exposure method |
EP1950793A1 (en) | 2005-10-05 | 2008-07-30 | Nikon Corporation | Exposure apparatus and exposure method |
EP1950795A4 (en) | 2005-11-01 | 2010-06-02 | Nikon Corp | EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD FOR MANUFACTURING THE APPARATUS |
JPWO2007055199A1 (ja) | 2005-11-09 | 2009-04-30 | 株式会社ニコン | 露光装置及び方法、並びにデバイス製造方法 |
JPWO2007055237A1 (ja) | 2005-11-09 | 2009-04-30 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
EP1962328B1 (en) | 2005-11-14 | 2013-01-16 | Nikon Corporation | Exposure apparatus, exposure method, and device fabricating method |
JP2007165869A (ja) | 2005-11-21 | 2007-06-28 | Nikon Corp | 露光方法及びそれを用いたデバイス製造方法、露光装置、並びに基板処理方法及び装置 |
US7803516B2 (en) | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
KR101539517B1 (ko) | 2005-12-08 | 2015-07-24 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US20070146904A1 (en) * | 2005-12-22 | 2007-06-28 | Webb James E | Submersive doublet for high numerical aperture optical system |
DE102006038454A1 (de) * | 2005-12-23 | 2007-07-05 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
US7932994B2 (en) | 2005-12-28 | 2011-04-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR20080103564A (ko) | 2006-02-16 | 2008-11-27 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
EP1986222A4 (en) | 2006-02-16 | 2010-09-01 | Nikon Corp | EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
WO2007094414A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
KR20080102390A (ko) | 2006-02-16 | 2008-11-25 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
CN102866591B (zh) | 2006-02-21 | 2015-08-19 | 株式会社尼康 | 曝光装置及方法、以及元件制造方法 |
KR101333872B1 (ko) | 2006-02-21 | 2013-11-27 | 가부시키가이샤 니콘 | 패턴 형성 장치 및 패턴 형성 방법, 이동체 구동 시스템 및 이동체 구동 방법, 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US7764427B2 (en) | 2006-02-21 | 2010-07-27 | Carl Zeiss Smt Ag | Microlithography optical system |
EP2003679B1 (en) | 2006-02-21 | 2016-11-16 | Nikon Corporation | Exposure apparatus, exposure method and device manufacturing method |
EP1993121A4 (en) | 2006-03-03 | 2011-12-07 | Nikon Corp | EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD |
EP1995768A4 (en) | 2006-03-13 | 2013-02-06 | Nikon Corp | EXPOSURE DEVICE, MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
US20070242254A1 (en) | 2006-03-17 | 2007-10-18 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US8982322B2 (en) | 2006-03-17 | 2015-03-17 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US20080013062A1 (en) | 2006-03-23 | 2008-01-17 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US8125613B2 (en) | 2006-04-21 | 2012-02-28 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
EP1852745A1 (en) * | 2006-05-05 | 2007-11-07 | Carl Zeiss SMT AG | High-NA projection objective |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
WO2007129753A1 (ja) | 2006-05-10 | 2007-11-15 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP2037486A4 (en) | 2006-05-18 | 2012-01-11 | Nikon Corp | EXPOSURE METHOD AND DEVICE, MAINTENANCE METHOD AND COMPONENT MANUFACTURING METHOD |
KR20090023335A (ko) | 2006-05-22 | 2009-03-04 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 |
WO2007136089A1 (ja) | 2006-05-23 | 2007-11-29 | Nikon Corporation | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 |
EP2023379A4 (en) | 2006-05-31 | 2009-07-08 | Nikon Corp | EXPOSURE APPARATUS AND EXPOSURE METHOD |
KR101236043B1 (ko) | 2006-07-14 | 2013-02-21 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치 및 디바이스 제조 방법 |
WO2008029884A1 (fr) | 2006-09-08 | 2008-03-13 | Nikon Corporation | Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif |
JP4905455B2 (ja) | 2006-09-08 | 2012-03-28 | 株式会社ニコン | マスク、露光装置、及びデバイス製造方法 |
US7872730B2 (en) | 2006-09-15 | 2011-01-18 | Nikon Corporation | Immersion exposure apparatus and immersion exposure method, and device manufacturing method |
US7557997B2 (en) | 2006-09-28 | 2009-07-07 | Nikon Corporation | Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element |
KR101419196B1 (ko) | 2006-09-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법 |
US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8300207B2 (en) | 2007-05-17 | 2012-10-30 | Nikon Corporation | Exposure apparatus, immersion system, exposing method, and device fabricating method |
KR20100031694A (ko) | 2007-05-28 | 2010-03-24 | 가부시키가이샤 니콘 | 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 |
US8194232B2 (en) | 2007-07-24 | 2012-06-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method |
US8547527B2 (en) | 2007-07-24 | 2013-10-01 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method |
US8264669B2 (en) | 2007-07-24 | 2012-09-11 | Nikon Corporation | Movable body drive method, pattern formation method, exposure method, and device manufacturing method for maintaining position coordinate before and after switching encoder head |
US8218129B2 (en) | 2007-08-24 | 2012-07-10 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system |
US8023106B2 (en) | 2007-08-24 | 2011-09-20 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method |
US9304412B2 (en) | 2007-08-24 | 2016-04-05 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, and measuring method |
US8867022B2 (en) | 2007-08-24 | 2014-10-21 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, and device manufacturing method |
US8237919B2 (en) | 2007-08-24 | 2012-08-07 | Nikon Corporation | Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads |
US8279399B2 (en) | 2007-10-22 | 2012-10-02 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
KR101542272B1 (ko) | 2007-10-26 | 2015-08-06 | 칼 짜이스 에스엠티 게엠베하 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 |
KR101592136B1 (ko) | 2007-10-26 | 2016-02-04 | 칼 짜이스 에스엠티 게엠베하 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
DE102007051671A1 (de) * | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
US9013681B2 (en) | 2007-11-06 | 2015-04-21 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US9256140B2 (en) | 2007-11-07 | 2016-02-09 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method with measurement device to measure movable body in Z direction |
CN101675500B (zh) | 2007-11-07 | 2011-05-18 | 株式会社尼康 | 曝光装置、曝光方法以及元件制造方法 |
US8665455B2 (en) | 2007-11-08 | 2014-03-04 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8422015B2 (en) | 2007-11-09 | 2013-04-16 | Nikon Corporation | Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method |
US8711327B2 (en) | 2007-12-14 | 2014-04-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
US9229333B2 (en) | 2007-12-28 | 2016-01-05 | Nikon Corporation | Exposure apparatus, movable body drive system, pattern formation apparatus, exposure method, and device manufacturing method |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
JP5567098B2 (ja) * | 2012-10-31 | 2014-08-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 瞳補正を有する反射屈折投影対物系 |
CN105549327B (zh) * | 2014-10-29 | 2018-03-02 | 上海微电子装备(集团)股份有限公司 | 曝光装置的调整装置及调整方法 |
EP3425730B1 (en) * | 2017-07-05 | 2021-09-01 | Zanini Auto Grup, S.A. | Radome for vehicles |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
DE19633128A1 (de) * | 1996-08-16 | 1998-02-19 | Zeiss Carl Fa | Achromatisches Linsensystem für Ultraviolettstrahlen mit Germaniumdioxid-Glas |
JP2000133588A (ja) * | 1998-08-18 | 2000-05-12 | Nikon Corp | 露光装置及び方法、該露光装置の製造方法並びに該露光装置を用いたデバイス製造方法 |
DE19855108A1 (de) | 1998-11-30 | 2000-05-31 | Zeiss Carl Fa | Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren |
KR20000034967A (ko) * | 1998-11-30 | 2000-06-26 | 헨켈 카르스텐 | 수정-렌즈를 갖는 오브젝티브 및 투사 조명 장치 |
US6630117B2 (en) * | 1999-06-04 | 2003-10-07 | Corning Incorporated | Making a dispersion managing crystal |
DE10029938A1 (de) * | 1999-07-09 | 2001-07-05 | Zeiss Carl | Optisches System für das Vakuum-Ultraviolett |
US6594430B1 (en) * | 2000-05-11 | 2003-07-15 | Carnegie Mellon University | Solid immersion lenses for focusing collimated light in the near-field region |
JP2002053839A (ja) * | 2000-08-08 | 2002-02-19 | Nikon Corp | 高屈折率液体 |
JP2002098903A (ja) * | 2000-09-25 | 2002-04-05 | Nikon Corp | 液浸系顕微鏡対物レンズ |
JP2002323652A (ja) * | 2001-02-23 | 2002-11-08 | Nikon Corp | 投影光学系,該投影光学系を備えた投影露光装置および投影露光方法 |
JP2002323653A (ja) * | 2001-02-23 | 2002-11-08 | Nikon Corp | 投影光学系,投影露光装置および投影露光方法 |
WO2002091078A1 (en) * | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
DE10133841A1 (de) * | 2001-07-18 | 2003-02-06 | Zeiss Carl | Objektiv mit Kristall-Linsen |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US20050164522A1 (en) * | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
CN1307456C (zh) * | 2003-05-23 | 2007-03-28 | 佳能株式会社 | 投影光学系统、曝光装置及器件的制造方法 |
JP4880869B2 (ja) * | 2003-08-28 | 2012-02-22 | 株式会社ニコン | レンズ系及び投影露光装置 |
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2004
- 2004-12-10 JP JP2006543484A patent/JP5106858B2/ja not_active Expired - Fee Related
- 2004-12-10 EP EP04803712A patent/EP1697798A2/en not_active Withdrawn
- 2004-12-10 KR KR1020067011811A patent/KR101200654B1/ko active IP Right Grant
- 2004-12-10 WO PCT/EP2004/014062 patent/WO2005059617A2/en active Application Filing
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WO2005059617A3 (en) | 2006-02-09 |
KR101200654B1 (ko) | 2012-11-12 |
WO2005059617A2 (en) | 2005-06-30 |
KR20060109935A (ko) | 2006-10-23 |
JP2007514192A (ja) | 2007-05-31 |
EP1697798A2 (en) | 2006-09-06 |
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