CN100380196C - Method for manufacturing color filter substrate and structure thereof - Google Patents

Abstract

The invention relates to a manufacturing method of a color filter substrate and a structure thereof, wherein the manufacturing method of the color filter substrate comprises the steps of firstly forming a black matrix on a substrate and enclosing a plurality of sub-pixel areas; then forming a color photoresist layer in the sub-pixel regions and covering a part of the black matrix; then patterning the color photoresist layer, and forming an opening on the color photoresist layer at the position where the gap is scheduled to be formed; spacers are then formed within the openings. The structure of the color filter substrate comprises: a black matrix formed on the substrate and enclosing a plurality of sub-pixel regions; a color photoresist layer formed on the substrate in the sub-pixel regions and covering part of the black matrix, the color photoresist layer having a plurality of openings; and a plurality of spacers, each spacer being disposed in each opening of the color photoresist layer. The invention can improve the problem that the spacing between crystal holes of the liquid crystal panel cannot be uniform due to the fact that the color photoresist layer on the color filter substrate is damaged earlier than the gap object when the liquid crystal display panel is applied with external force, and can improve the load-bearing capacity of the liquid crystal display panel.

Description

Manufacturing method and structure of color filter substrate

technical field

The present invention relates to a manufacturing method and structure of a color filter substrate, in particular to a color filter substrate capable of improving the unevenness of the cell gap of a liquid crystal display panel and improving the load bearing capacity of the panel. ) manufacturing method and its structure.

Background technique

Due to the increasing demand for displays, the industry is fully committed to the development of related displays. Among them, the cathode ray tube (Cathode Ray Tube) has been monopolizing the display market for many years due to its excellent display quality and technological maturity. However, due to the rise of the concept of green environmental protection, the characteristics of large energy consumption and large radiation, and the limited space for product flattening, it cannot meet the market demand for light, thin, short, small, beautiful and low power consumption. market trends. Therefore, thin film transistor liquid crystal displays (Thin Film Transistor Liquid Crystal Displays) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market.

At present, liquid crystal displays are developing towards full color, large size, high resolution and low cost. However, various performances of liquid crystal display devices, such as response speed, transparency contrast value and viewing angle, etc., should be compared with the film of the liquid crystal layer. thick about. Therefore, generally according to the optical properties of the liquid crystal material, the thickness of the liquid crystal layer is strictly controlled and a spacer is added. Among them, the spacers can be divided into rod-shaped spacers, granular spacers and photo-spacers. However, both the rod-shaped and granular interstitials need a spreading device to distribute them. However, these two interstitials tend to form agglomerates, which makes the thickness of the liquid crystal layer not uniform. Additional processes must be implemented to make them uniformly distributed, which increases production costs. Therefore, the photoresist spacers produced by the lithography process can not only control their distribution position, but also control their height, so that the thickness of the liquid crystal layer can be kept uniform. Therefore, it has been used in the industry recently. Here, the manufacturing process of the color filter substrate with photoresist spacers will be described.

1A to 1E are schematic cross-sectional views of the manufacturing process of a conventional color filter substrate. Please refer to FIG. 1A , first, a substrate 100 is provided, and then a black matrix 102 is formed on the substrate 100 . Please refer to FIG. 1B, and then form a color photoresist layer 104 on the substrate 100 and the black matrix 102, wherein the color photoresist layer 104 is composed of several red photoresist blocks, several green photoresist blocks and several It is composed of blue photoresist blocks. Referring to FIG. 1C , an overcoating layer 106 (over coating) is then formed on the color photoresist layer 104 . Referring to FIG. 1D , an electrode layer 108 is then formed on the cover layer 106 . Referring to FIG. 1E , finally a photoresist spacer 110 is formed on the surface of the electrode layer 108 .

Therefore, the photoresist spacers in the conventional color filter substrate are stacked on the electrode layer, the covering layer and the color photoresist layer. Since the main function of the spacer is to keep the thickness of the liquid crystal layer uniform, the spacer must have properties such as rigidity, complete elasticity, and good dimensional stability. In other words, its mechanical properties are better than ordinary color photoresist layers or cover layers. . Therefore, when the liquid crystal display panel is subjected to abnormal force during use or manufacturing, the color photoresist layer on the color filter substrate will often be damaged or deformed earlier than the spacers, resulting in crystal holes in the liquid crystal display panel. The uneven spacing affects the display effect of the panel.

It can be seen that the above-mentioned existing manufacturing method and structure of the color filter substrate still have defects, and further improvement is urgently needed. In order to solve the defects of the existing manufacturing methods and structures of color filter substrates, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time. This is obviously the urgent desire of the relevant industry solved problem.

In view of the above-mentioned existing defects in the manufacturing method and structure of the color filter substrate, the inventor actively researches and innovates based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, in order to create a new The manufacturing method and structure of the color filter substrate can improve the general existing manufacturing method and structure of the color filter substrate, making it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.

Contents of the invention

The object of the present invention is to overcome the above-mentioned existing defects in the manufacturing method and structure of the color filter substrate, and provide a new manufacturing method and structure of the color filter substrate. The technical problem to be solved is to make it It can overcome the problem that when the panel is subjected to external force, the color photoresist layer is often damaged or deformed earlier than the spacer, which causes the problem of uneven spacing between the panel crystal cavities, and can improve the possible spacing of the panel crystal cavity when the panel is subjected to external forces. change, but has industrial utilization value.

Another object of the present invention is to provide a new manufacturing method and structure of a color filter substrate. The technical problem to be solved is to further improve the load-bearing capacity of the panel, so that it is more suitable for practical use.

The manufacturing method and structure of the color filter substrate of the present invention can improve the damage of the color photoresist layer on the color filter substrate earlier than the spacers when the liquid crystal display panel is subjected to external force, which causes the damage of the liquid crystal panel. The problem that the cell gap cannot be uniform. In addition, the load-bearing capacity of the liquid crystal display panel can be improved.

The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. A method for manufacturing a color filter substrate according to the present invention includes the following steps: forming a black matrix on a substrate to surround a plurality of sub-pixel regions; forming a black matrix in the sub-pixel regions on the substrate. a color photoresist layer covering part of the black matrix; patterning the color photoresist layer to form an opening in the color photoresist layer where the spacer is predetermined to be formed; and forming a spacer in the opening, Wherein, the electrode layer is located between the spacer and the black matrix layer.

The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned manufacturing method of the color filter substrate, the opening formed in the color photoresist layer exposes the black matrix.

The aforementioned manufacturing method of the color filter substrate further includes: forming a cover layer on the color photoresist layer; patterning the cover layer to form the opening in the cover layer where the spacer is predetermined to be formed, wherein, The electrode layer is formed on the color photoresist layer, the black matrix layer and the covering layer.

The purpose of the present invention and the solution to its technical problems are also achieved by the following technical solutions. According to the structure of a color filter substrate proposed by the present invention, it includes: a black matrix formed on a substrate, wherein the black matrix surrounds a plurality of sub-pixel regions; a color photoresist layer formed on the substrate In the above sub-pixel regions, and covering part of the black matrix, wherein the color photoresist layer has a plurality of openings; an electrode layer is formed on the color photoresist layer and the black matrix layer; and a plurality of Spacers, each of the spacers is disposed in each of the openings in the color photoresist layer, wherein the electrode layer is located between the spacers and the black matrix layer.

The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned structure of the color filter substrate, the openings in the color photoresist layer expose the black matrix.

The aforementioned structure of the color filter substrate further includes a cover layer formed on the color photoresist layer.

Compared with the prior art, the present invention has obvious advantages and beneficial effects. As can be seen from the above technical solutions, in order to achieve the aforementioned object of the invention, the main technical contents of the present invention are as follows:

The invention provides a method for manufacturing a color filter substrate. The method includes the following steps: firstly, a black matrix is formed on the substrate to enclose several sub-pixel regions. Then, a color photoresist layer is formed in these sub-pixel regions and covers the substrate and part of the black matrix, wherein the color photoresist layer is composed of several red photoresist blocks, several green photoresist blocks and several blue photoresist blocks. composed of blocks. Next, the color photoresist layer is patterned to form openings in the color photoresist layer where spacers are predetermined to be formed. Then, an electrode layer is formed on the color photoresist layer and the black matrix layer. Finally, spacers are formed within the openings.

In a preferred embodiment of the present invention, the opening formed in the color photoresist layer exposes the black matrix.

The invention also proposes a structure of a color filter substrate, which is mainly composed of a substrate, a black matrix, a color photoresist layer, an electrode layer and several spacers. Wherein, the black matrix is arranged on the substrate to enclose several sub-pixel regions. In addition, the color photoresist layer is disposed in the sub-pixel regions on the substrate, and the color photoresist layer covers the substrate and part of the black matrix. In particular, there are several openings in the color photoresist layer. The electrode layer is formed on the color photoresist layer and the black matrix layer. The spacers are disposed in the openings in the color photoresist layer.

In a preferred embodiment of the present invention, the openings in the color photoresist layer expose the black matrix.

In the present invention, since the spacer of the color filter substrate is not arranged on the color photoresist layer, but is directly arranged on the black matrix with better rigidity, it can avoid deformation or damage to the color photoresist layer caused by external force , which affects the panel crystal cavity spacing, and then affects the display effect of the panel.

With the above technical solution, the color filter substrate of the present invention has at least the following advantages:

1. The color filter substrate of the present invention can improve the variation of panel cavity spacing that may occur when the panel is subjected to external force, and can further improve the load bearing capacity of the panel.

2. Since the present invention does not form the photoresist spacers on the color photoresist layer, it does not need to consider the mechanical properties of the material of the color photoresist layer, and can increase the flexibility of material selection for the spacers.

3. The present invention is applicable not only to general color filters but also to coplanar switching color filters.

To sum up, the manufacturing method and structure of the special color filter substrate of the present invention can overcome the problem that when the panel encounters an external force, the color photoresist layer is often damaged or deformed earlier than the spacers, which causes the gap between the crystal holes of the panel. The problem of inhomogeneity can improve the variation of panel crystal cavity spacing that may occur when the panel is subjected to external force, and has industrial application value; in addition, it can further improve the load-bearing capacity of the panel, so that it is more suitable for practical use. It has the above-mentioned many advantages and practical value, and there is no similar method and structure design published or used in the same kind of manufacturing method and structure, so it is indeed innovative, no matter in the manufacturing method, structure or function. The improvement has made great progress in technology, and has produced useful and practical effects, and has improved multiple functions compared with the existing manufacturing method and structure of the color filter substrate, so it is more suitable for practical use. And it has wide application value in the industry, and it is a novel, progressive and practical new design.

The above description is only an overview of the technical solutions of the present invention. In order to understand the technical means of the present invention more clearly and implement them according to the contents of the description, the preferred embodiments of the present invention and accompanying drawings are described in detail below.

Description of drawings

FIG. 1A to FIG. 1E are schematic cross-sectional views of the manufacturing process of a conventional color filter.

FIG. 2 is a top view of a color filter according to a preferred embodiment of the present invention.

3A to 3F are schematic cross-sectional views of the process flow of a color filter according to a preferred embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of a color filter according to another preferred embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a color filter according to another preferred embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a color filter according to yet another preferred embodiment of the present invention.

100, 200: substrate 102, 202: black matrix

204: sub-pixel area 106, 206: color photoresist layer

106a, 206a, 206b, 206c: opening 108, 208: covering layer

110, 210: electrode layer 112, 212: spacer

Detailed ways

The manufacturing method and structure of the color filter substrate according to the present invention and its specific manufacturing method, steps, structure, features and effects will be described in detail below with reference to the accompanying drawings and preferred embodiments.

FIG. 2 is a top view of a color filter substrate according to a preferred embodiment of the present invention. 3A to 3F are schematic cross-sectional views of the manufacturing process of a color filter substrate according to a preferred embodiment of the present invention, wherein FIG. 3A to FIG. 3F correspond to the section from I-I' in FIG. 2 .

Please refer to FIG. 3A and refer to FIG. 2. First, a black matrix material layer (not shown) is formed on the substrate 200, and then the black matrix material layer is subjected to a lithography process or a lithography process plus an etching process. , to form a black matrix 202 and enclose several sub-pixel areas 204 . Wherein, if the constituent material of the black matrix 202 is light-shielding resin, the black matrix 202 may be formed by a photolithography process, and its thickness is, for example, 1-2 μm. If the material of the black matrix 202 is chromium metal, the black matrix 202 can be formed by lithography process plus etching process, and its thickness is, for example, 0.1-0.2 μm. In addition, the material of the substrate 200 can be transparent substrates such as glass and plastic.

Referring to FIG. 3B together with FIG. 2 , a color photoresist layer 206 is formed in the sub-pixel regions 204 on the substrate 200 to cover the substrate 200 and part of the black matrix 202 . The color photoresist layer 206 is composed of several red photoresist blocks (R), several green photoresist blocks (G) and several blue photoresist blocks (B). Steps such as spin coating process (spincoating) and baking process, etc., form a red photoresist layer (not shown in the figure), and then carry out lithography process to retain the red photoresist layer (not shown in the figure) at a specific area. Then, a green photoresist layer (not shown) is formed by spin coating and baking process, and then the green photoresist layer (not shown) in a specific area is retained by a lithography process, and then the above steps are repeated to retain a specific area. The blue photoresist layer at the area (not shown). The arrangement of the red, green and blue photoresist blocks of the color photoresist layer 206 is, for example, mosaic type, stripe type, four pixels type and triangle arrangement. type) and other types.

Then the color photoresist layer 206 is patterned to form an opening 206a, wherein the opening 206a exposes the black matrix 202, and the position of the opening 206a corresponds to the position of the TFTs on the TFT panel (not shown). The above-mentioned method for patterning the color photoresist layer 206 includes, for example, performing exposure and development processes to form the openings 206 a in the color photoresist layer 206 .

Please refer to FIG. 3C and refer to FIG. 2 together. In a preferred embodiment of the present invention, after forming the color photoresist layer 206, it further includes forming a cover layer 208 on the black matrix 202 and the color photoresist layer 206, wherein The material of the cover layer 208 is acrylic and urethane resin, and its main function is to prevent the liquid crystal from being polluted and to make the surface of the color photoresist layer 206 flat.

Referring to FIG. 3D and referring to FIG. 2, the covering layer 208 is patterned to form an opening 206b at the previously formed opening 206a, wherein the opening 206b exposes the black matrix 202, and the position of the opening 206b is corresponding to the thin film transistor. The position of the thin film transistor on the panel (not shown in the figure). The above method of patterning the cover layer 208 is, for example, performing exposure and development processes.

Referring to FIG. 3E together with FIG. 2 , an electrode layer 210 is formed on the covering layer 208 and the black matrix 202 . The material of the electrode layer 210 can be indium tin oxide (ITO), indium zinc oxide (IZO) and other transparent conductive materials, and its formation method is, for example, sputtering, and its thickness is, for example, 0.15 μm.

Please refer to FIG. 3F and refer to FIG. 2 together. A spacer material layer (not shown) is formed on the electrode layer 210 by a spin coating and baking process, and then an exposure and development process is performed to form a color photoresist layer. A spacer 212 is formed in the opening 206 b of 206 , and the material of the above-mentioned spacer material layer is, for example, a photoresist material.

The color filter substrate produced by the above steps is shown in FIG. 3F . constitute. Wherein, the black matrix 202 is disposed on the substrate 200 to enclose several sub-pixel regions 204 . Wherein, the color photoresist layer 206 is disposed in the sub-pixel regions 204 and covers the substrate 200 and part of the black matrix 202 . In addition, the cover layer 208 is disposed on the black matrix 202 and the color photoresist layer 206 . There are openings 206 b in the color photoresist layer 206 and the cover layer 208 , and the openings 206 b expose the black matrix 202 . The electrode layer 210 is formed on the cover layer 208 . The spacers 212 are located in the openings 206b and cover the electrode layer 210 in the openings 206b.

The above-mentioned color filter substrate is designed to have a cover layer, however, the present invention can also be applied to a color filter substrate without a cover layer, and its structure will now be described in detail as follows. Please refer to FIG. 4 , which is a schematic cross-sectional view of a color filter substrate according to another preferred embodiment of the present invention. The structure is mainly composed of a substrate 200 , a black matrix 202 , a color photoresist layer 206 , an electrode layer 210 and several spacers 212 . Wherein, the black matrix 202 is disposed on the substrate 200 to form several sub-pixel regions 204 . Among them, the color photoresist layer 206 is disposed in the sub-pixel regions 204 and covers the substrate 200 and part of the black matrix 202 . And the color photoresist layer 206 has several openings 206c, and these openings 206c expose the black matrix 202 . In addition, the electrode layer 210 is formed on the black matrix 202 and the color photoresist layer 206, and the spacers 212 are located in the openings 206c, covering the electrode layer 210 in the openings 206c.

If the present invention is applied to an in-plane switching (IPS) liquid crystal display, no electrode layer will be formed on the color filter substrate, and its detailed structure will be described below. Please refer to FIG. 5 , which is a schematic cross-sectional view of a color filter substrate according to another preferred embodiment of the present invention. A spacer 212 is formed. Wherein, the black matrix 202 is disposed on the substrate 200 to enclose several sub-pixel regions 204 . Among them, the color photoresist layer 206 is disposed in the sub-pixel regions 204 and covers the substrate 200 and part of the black matrix 202 . In addition, the cover layer 208 covers the black matrix 202 and the color photoresist layer 206 . In addition, the color photoresist layer 206 and the cover layer 208 have several openings 206 b, and the openings 206 b expose the black matrix 202 . The spacer 212 is formed in the opening 206b.

The above-mentioned color filter substrate applied to the coplanar switching liquid crystal display may also be in the form of no covering layer, and its structure is described below. Please refer to FIG. 6, which is a schematic cross-sectional view of a color filter substrate according to another preferred embodiment of the present invention. The structure is mainly composed of a substrate 200, a black matrix 202, a color photoresist layer 206, and several spacers 212. constituted. Wherein, the black matrix 202 is disposed on the substrate 200 to enclose several sub-pixel regions 204 . Among them, the color photoresist layer 206 is disposed in the sub-pixel regions 204 and covers the substrate 200 and part of the black matrix 202 . And the color photoresist layer 206 has several openings 206c, and these openings 206c expose the black matrix 202 . Additionally, a number of spacers 212 are located within these openings 206c.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the method and technical content disclosed above to make some changes or modifications to equivalent embodiments with equivalent changes, but any content that does not depart from the technical solution of the present invention, Any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims (6)

1. A method for manufacturing a color filter substrate, characterized in that it comprises the following steps: forming a black matrix on a substrate to enclose a plurality of sub-pixel regions; forming a color photoresist layer in the sub-pixel regions on the substrate, and covering part of the black matrix; patterning the color photoresist layer to form an opening in the color photoresist layer where spacers are predetermined to be formed; forming an electrode layer on the color photoresist layer and the black matrix layer; and A spacer is formed in the opening, wherein the electrode layer is located between the spacer and the black matrix layer. 2. The manufacturing method of the color filter substrate according to claim 1, wherein the opening formed in the color photoresist layer exposes the black matrix. 3. The manufacturing method of the color filter substrate according to claim 1, further comprising: forming a covering layer on the color photoresist layer; The covering layer is patterned to form the opening in the covering layer where the spacers are predetermined to be formed, wherein the electrode layer is formed on the color photoresist layer, the black matrix layer and the covering layer. 4. A structure of a color filter substrate, characterized in that it comprises: A black matrix formed on a substrate, wherein the black matrix surrounds a plurality of sub-pixel areas; A color photoresist layer is formed in the sub-pixel regions on the substrate and covers part of the black matrix, wherein the color photoresist layer has a plurality of openings; an electrode layer formed on the color photoresist layer and the black matrix layer; and A plurality of spacers, each of the spacers is disposed in each of the openings in the color photoresist layer, wherein the electrode layer is located between the spacers and the black matrix layer. 5. The structure of the color filter substrate according to claim 4, wherein the openings in the color photoresist layer expose the black matrix. 6. The structure of the color filter substrate according to claim 4, further comprising a cover layer formed on the color photoresist layer.

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