CN100445836C - Liquid crystal display panel, array substrate and manufacturing method thereof - Google Patents

Abstract

An array substrate includes a base, a black matrix and multiple color resists. The black matrix is formed on the base and is composed of multiple blocks, and two ends of some blocks have different thicknesses. A plurality of color resists are arranged on the base, and each color resist is formed between two adjacent blocks and covers at least one end of the two adjacent blocks respectively. Wherein, the two ends of each block are respectively covered by different color resists.

Description

Liquid crystal display panel, array substrate and manufacturing method thereof

technical field

The present invention relates to an array substrate, in particular to a structure of an array substrate with color resistance and applied to a display panel.

Background technique

With the advancement of display technology, compared with traditional CRT displays, thin film transistor liquid crystal display (TFT-LCD) has the advantages of lightness, thinness, low radiation, and small size without occupying space. It has become the main product in the display market. In order to comply with the rapid development of liquid crystal display products, the industrial competition among LCD panel manufacturers is increasing day by day.

Color filter (color filter, CF) is one of the most important components in the liquid crystal display, and its main function is to enable the liquid crystal display to produce color images. Please refer to FIG. 1A , which shows a top view of a color filter 1 , its main components include a black matrix 11 and a plurality of color resists 14 in compartments defined by the black matrix 11 .

Please refer to FIG. 1B , which is a cross-sectional view of FIG. 1A . The basic structure of the color filter 1 is shown in the figure. The color filter 1 includes a substrate 10 , a black matrix 11 , a plurality of color resists 14 and a conductive layer 16 .

The black matrix 11 is formed on the substrate 10 and consists of a plurality of blocks 12 . The color resistance 14 is also formed on the substrate 10 and located between two adjacent blocks, and has three color resistances 14 of red (R), green (G) and blue (B). Among them, the color presentation of the liquid crystal display is because when the white light of the backlight passes through the color resistance 14 on the color filter 1, three colors of red, green and blue will be produced respectively, and through the combination of these three colors, a composition is formed. Various colors. The function of the black matrix 11 is to separate the three color resists 14 of red, green and blue, and cover part of the light of the three colors, so as to avoid light leakage from affecting the chromaticity, thereby improving the contrast.

However, due to the different requirements for image chromaticity, manufacturers must make some adjustments to the chromaticity of the three colors. Generally speaking, when the film thickness of the color resist 14 in the color filter 1 is different, the displayed chromaticity will also be different. high. Therefore, manufacturers will make the color resists 14 of different colors have different film thicknesses and heights according to requirements. For example: when it is desired to make the display screen look bluish, among the color resists made by color filters, the film thickness of the blue color resist 14 will be higher than that of the red color resist 14 and the green color resist 14, so that there is a film between each color resist 14 Thick break difference.

Although the difference in film thickness and height between the color resists of the above color filter 1 can meet the requirements of image chromaticity, the following problems will arise:

1. After the color resistance process, the film surface of the color resistance often has horns (Tusno) formed, resulting in uneven film surface. Therefore, after the color resist is formed, a planarization step is performed to polish the film surface of the color resist to remove horns and planarize the film surface of the color resist.

However, due to the film thickness difference between the color resists, when polishing, only the corners of the color resists with a higher film thickness can be removed, but the corners of the color resists with a lower film thickness cannot be removed. Therefore, the film thickness height difference among the color resists will cause the problem that the color resist film surface of the color filter cannot be completely flattened.

2. After the color resistance is made, a conductive layer (ITO) will be formed on the upper surface of the color filter. In this way, when the color filter is paired with the thin film transistor array substrate, it will have the function of electrification.

However, due to the difference in film thickness and height among the color resists, the conductive layer will be discontinuous. As shown in FIG. 1B , due to the high film thickness of the blue (B) color resist 14 , during the process of plating the conductive layer 16 , one side cannot be plated to the conductive layer 16 .

3. In the cell process, a layer of alignment film (such as: PI) will be coated on the color filter, and then the alignment action will be carried out by rubbing, so that the liquid crystal molecules can face the predetermined direction Slanted arrangement.

However, due to the difference in film thickness and height among the color resists, the alignment on the alignment film layer will be discontinuous, resulting in the inability of the liquid crystal to tilt and rotate smoothly.

Therefore, in view of the above-mentioned deficiencies in the prior art, it is necessary to provide a practical and effective solution to this problem.

Contents of the invention

An object of the present invention is to solve the problem of uneven film thickness among color resists on the array substrate, so that the film surfaces of all color resists can be completely planarized after polishing.

Another object of the present invention is to improve the film thickness gap between the color resists on the array substrate, so that the film thicknesses of the color resists are at the same height, so as to avoid the problem of discontinuity of the conductive layer.

Another object of the present invention is to improve the film thickness gap among the color resists on the array substrate, so that the film thicknesses of the color resists are highly consistent, so as to avoid the problem of discontinuous alignment of the alignment film layer.

Another object of the present invention is to improve the film thickness gap among the color resists on the array substrate, so that the film thicknesses of the color resists are at the same height, so as to improve the process yield of the liquid crystal display panel.

The invention provides an array substrate. The structure of the array substrate includes a base, a black matrix and a plurality of color resists. The black matrix is formed on the base and is composed of multiple blocks, and two ends of some blocks have different thicknesses. A plurality of color resists are arranged on the base, and each color resist is formed between two adjacent blocks and covers at least one end of the two adjacent blocks respectively. Wherein, the two ends of each block are respectively covered by different color resists.

The present invention provides a liquid crystal display panel, comprising the above-mentioned array substrate, an opposite substrate, and a liquid crystal layer located between the array substrate and the opposite substrate.

The invention provides a manufacturing method of an array substrate, the steps are as follows: a base is provided. A black matrix is formed on the upper surface of the base, and the black matrix is composed of multiple blocks, wherein two ends of some blocks have different thicknesses. forming a plurality of color resistors on the substrate, each color resistor is formed between two adjacent blocks, and covers at least one end of the two adjacent blocks, wherein the two ends of each block are respectively covered by different color resistors cover.

The advantages and spirit of the present invention, as well as more detailed implementations, can be further understood through the following implementations and drawings.

Description of drawings

Through the following detailed description in conjunction with the accompanying drawings, the above contents and many advantages of this invention can be easily understood, wherein:

Figure 1A is a top view of a color filter;

Figure 1B is a cross-sectional view of a color filter;

2A to 2E are schematic diagrams of the manufacturing method of the array substrate of the present invention;

3 is a schematic diagram of a first embodiment of a liquid crystal display panel of the present invention;

4 is a schematic diagram of a second embodiment of a liquid crystal display panel of the present invention;

FIG. 5A is a first modification example of the array substrate of the present invention;

FIG. 5B is a second modification example of the array substrate of the present invention;

FIG. 5C is a third modification example of the array substrate of the present invention;

5D is a fourth variation example of the array substrate of the present invention;

FIG. 5E is a fifth variation example of the array substrate of the present invention;

FIG. 5F is a sixth variation example of the array substrate of the present invention; and

FIG. 5G is a seventh modification example of the array substrate of the present invention.

Wherein reference sign is:

1: Color filter 10: Substrate

11: Black Matrix 12: Block

14: Color resistance 16: Conductive layer

20: First substrate 22a: Material layer

22: Block 221: The first block

222: The second block 223: The third block

24: Color resistance 26: The first conductive layer

27: First alignment film layer 29: Adjustment layer

30: Second substrate 32: Active element array

36: Second conductive layer 37: Second alignment film layer

40: First base 42: Block

44: Color resistance 46: The first conductive layer

47: First alignment film layer 49: Flat layer

50: opposite substrate 501: second substrate

502: Second conductive layer 58: Liquid crystal layer

Detailed ways

Please refer to FIG. 2A to FIG. 2E , which are schematic diagrams of the manufacturing method of the array substrate of the present invention. Referring to FIG. 2A , firstly, a first substrate 20 is provided, and a material layer 22 a is coated or deposited on the first substrate 20 . Wherein, the material of the material layer 22a is selected from the group consisting of Cr, CrO, Ni and other metals or metal compounds, resins, dark organic materials, and pigments (Pigment). The purpose of the material layer 22a is to cover different colors. part of the light to avoid light leakage affecting the chromaticity, thereby improving the contrast. In a preferred embodiment, the above-mentioned resin and pigment are preferably black.

Next, the material layer 22a is patterned to form a matrix on the first substrate 20. In this embodiment, the matrix is represented by a black matrix as an example. The black matrix is composed of multiple blocks. Please refer to FIG. 2B for the manufacturing process. As shown in FIG. 2B , a photoresist layer 62 is coated on the upper surface of the material layer 22 a, and then a photolithographic etching process is performed on the material layer 22 a by using a mask 64 to form a plurality of blocks 22 .

Wherein, the mask 64 is a half-tone mask or a multi-tone mask. Since the above two types of masks have light-transmitting regions with different light transmittances, the two ends of the etched partial blocks have different thicknesses.

In a preferred embodiment, the mask 64 has three kinds of light-transmitting regions: a first light-transmitting region 64a, a second light-transmitting region 64b and a third light-transmitting region 64c. The order of light transmittance from low to high is the first light transmission area 64a, the second light transmission area 64b and the third light transmission area 64c. After exposure and development, the material layer 22a corresponding to the first light-transmitting region 64a is completely etched, the material layer 22a corresponding to the second light-transmitting region 64b is partially etched, and the material layer 22a corresponding to the third light-transmitting region 64c is also partially etched. Etched or not etched, if partially etched, etched to a lesser degree.

Therefore, the blocks 22 in this embodiment have two types: step shape and rectangular block shape, as shown in FIG. 2C . The two ends of the blocks 22 formed correspondingly by the adjacent second transparent region 64 b and the third transparent region 64 c have different thicknesses and are stepped. The block 22 formed corresponding to the third light-transmitting region 64c whose both ends are adjacent to the first light-transmitting region 64a is a rectangular block-shaped block 22 with a uniform thickness.

Please refer to FIG. 2D, after forming the black matrix, then form a plurality of color resistances 24 on the first substrate 20, the color resistances 24 include red color resistance (R) 24, green color resistance (G) 24 and blue color resistance (B) ) 24 three color resists are sequentially formed on the first substrate 20 .

Each color resist 24 is formed between two adjacent blocks 22 and covers at least one end of the two adjacent blocks 22 respectively, wherein two ends of each block 22 are respectively covered by different color resists 24 .

In the embodiment of the present invention, both ends of adjacent blocks 22 covered by the same color resist 24 have equal thicknesses. As shown in FIG. 2D , the two ends of the adjacent blocks 22 covered by the red color resist (R) 24 , the green color resist (G) 24 and the blue color resist (B) 24 have equal thicknesses.

It is worth noting that, if the chromaticity is bluish and the thickness of the film should be consistent, the two ends of the adjacent block 22 covered by the blue color resist (B) 24 have a relatively low thickness. Therefore, the film thicknesses of the three kinds of color resistance 24 are not only equal, but also the blue color resistance (B) 24 formed on the array substrate has a larger volume than the red color resistance (R) 24 and the green color resistance (G) 24, that is, The chromaticity that the array substrate can present is bluish.

Of course, the thickness of the two ends of the adjacent blocks 22 covered by the color resistance 24 of a specific color can also be adjusted according to other requirements such as reddish or greenish chromaticity, so as to maintain the film thickness height of the color resistance 24 of the three colors equal.

That is to say, color resists 24 of different colors have different volumes according to chromaticity requirements. When the film thicknesses of all the color resists 24 are equal, the two ends of the adjacent blocks 22 covered by the larger color resists 24 have lower film thicknesses.

Therefore, the present invention mainly utilizes a half-tone mask or a multi-tone mask to manufacture blocks 22 with different film thickness and height, so as to control the film thickness and height of each color resist 24 .

Generally speaking, in the embodiment of the present invention, the thickness of the block 22 is 1 to 1.5 microns. The red color resist (R) 24 , the green color resist (G) 24 and the blue color resist (B) 24 have a thickness of 1 μm to 2.5 μm.

Please continue to refer to FIG. 2E. After forming a plurality of color resists 24 on the first substrate 20, a first conductive layer 26 is formed on the block 22 and the color resists 24. The first conductive layer 26 is, for example, ITO transparent conductive layer. Next, in the cell process, an alignment film layer, such as a PI film layer, is coated on the first conductive layer 26, and subsequent alignment and assembly procedures are performed.

The array substrate of the present invention can be a kind of color filter, which can be applied to the color filter formed on the opposite substrate of the active element array substrate, and the color filter formed on the active element array (color filter on array, COA) Two LCD panel types.

Please refer to FIG. 3 . FIG. 3 is a schematic diagram of a liquid crystal display panel in which the color resist is formed on the opposite substrate of the active element array substrate. The liquid crystal display panel includes an active element array substrate, an array substrate and a liquid crystal layer 38 disposed between the active element array substrate and the array substrate.

The array substrate is arranged above the active element array substrate. The structure of the array substrate is the same as the above-mentioned structure, including a first base 20 , a black matrix and a plurality of color resists 24 .

The black matrix is formed on the first substrate 20, and the black matrix is composed of a plurality of blocks 22, wherein two ends of some blocks 22 have different thicknesses. A plurality of color resistances 24 are arranged on the first substrate 20, and each color resistance 24 is formed between two adjacent blocks 22, and covers one end of the two adjacent blocks 22 respectively, wherein each block 22 The two ends are respectively covered by different color resists 24 . In addition, the array substrate further includes a first conductive layer 26 and a first alignment film layer 27 , which are sequentially formed on the upper surface of the black matrix and the color resist 24 .

The active element array substrate includes a second base 30 and an active element array 32 disposed on the second base 30 . A second conductive layer 36 and a second alignment layer 37 are sequentially formed on the active device array 32 . Wherein, the active element array 32 is, for example, a thin film transistor array.

Please refer to FIG. 4 . FIG. 4 is a schematic diagram of a liquid crystal display panel in which color resistance is formed on an active element array (color filter on array, COA). The liquid crystal display panel is characterized in that an active element array is formed on the substrate and below the color resist and the black matrix in the array substrate.

As shown in FIG. 4 , the liquid crystal display panel includes an array substrate, an opposite substrate 50 and a liquid crystal layer 58 . Wherein, the opposite substrate 50 is disposed opposite to the array substrate, and the liquid crystal layer 58 is disposed between the array substrate and the opposite substrate 50 .

The array substrate includes a first substrate 40 , an active element array 48 , a black matrix and a plurality of color resists 44 .

The active device array 48 is formed on the first substrate 40, and the active device array 48 is, for example, a thin film transistor array. The black matrix is formed on the first substrate 40, and the black matrix is composed of a plurality of blocks 42, wherein two ends of some blocks 42 have different thicknesses, as shown in FIG. 4 . A plurality of color resistances 44 are arranged on the first substrate 40, and each color resistance 44 is formed between two adjacent blocks 42, and covers one end of the two adjacent blocks 42 respectively, wherein each block 42 The two ends are respectively covered by different color resists 44 . In addition, the array substrate further includes a first conductive layer 46 connected to the active element array 48, a flat layer 49 formed on the black matrix and a plurality of color resists 44, and a first alignment film layer 47 formed on the flat layer 49 .

The opposite substrate 50 includes a second base 501 , and a second conductive layer 502 and a second alignment layer 503 sequentially formed on the second base 501 .

In a preferred embodiment, the above-mentioned first substrates 20, 40 and second substrates 30, 501 are all transparent insulating substrates. Both the first conductive layers 26, 46 and the second conductive layers 36, 502 are ITO transparent conductive layers. Both the first alignment film layers 27 and 47 and the second alignment film layers 37 and 503 are PI film layers.

In the above-mentioned embodiments, a half-tone mask is used to form the stepped blocks 22 with different film thicknesses at both ends, so as to control the film thickness of the color resist 24 . However, other technical means may also be used to form the block 22 with different film thicknesses and heights at both ends.

Referring to FIG. 5A, a half-tone mask or a multi-tonemask design can be used to make one end of the partial block 22 have a bevel edge.

Please refer to FIG. 5B, in the process of forming the black matrix on the upper surface of the first substrate 20, first coat or deposit a material layer, and perform a photolithographic etching process through the first mask to form a first block 221 on the upper surface of the first substrate 20 . Next, a material layer is coated again, and a photolithographic etching process is performed through a second mask to form a second sub-block 222 on the upper surface of the first sub-block 221 .

Wherein, the size of the above-mentioned second sub-block 222 is smaller than the size of the first sub-block 221, so the sub-block 22 with different film thickness and height at both ends is composed of the first sub-block 221 and the second sub-block 222. Composition, in a preferred embodiment, this block 22 is also stepped. The block 22 with equal film thickness and height at both ends can be selectively formed together with the first block 221 or the second block 222 according to the design of the light-transmitting area of the above two masks.

Generally, the thickness of the first block 221 is 1 micron to 1.3 microns, and the thickness of the block 22 is 1.1 micron to 1.5 microns.

Please refer to FIG. 5C , in another embodiment, in addition to the first sub-block 221 and the second sub-block 222 , the block 22 with different film thickness and height at both ends may further include a third sub-block 223 . Please refer to FIG. 5B at the same time. After the second block 222 is formed, a material layer is applied again, and a photolithographic etching process is performed through a third mask to form the third block 223 on the first block 221. of the upper surface.

Wherein, the size of the above-mentioned third block 223 is smaller than the size of the first block 221, so the block 22 with different film thickness and height at both ends is composed of the first block 221, the second block 222 and the second block 221. The third block 223 is formed. In a preferred embodiment, this block 22 is also stepped. The block 22 with equal film thickness and height at both ends can be selectively combined with the first block 221, the second block 222 or the third block 223 according to the light-transmitting area design of the above three masks. form.

The block 22 with different film thickness and height at both ends can not only be used to reduce the height of the color resist 24 with a higher film thickness, but also can be used to increase the height of the color resist 24 with a lower film thickness. Please refer to FIG. 5D, in this embodiment, the film thicknesses of the red color resistance (R) 24 and the green color resistance (G) 24 are higher than the blue color resistance (B) 24 (red color resistance (R) 24 and The green color resist (G)24 has a larger volume). Therefore, in order to make the film thickness height of the blue color resistance (B) 24 consistent with the red color resistance (R) 24 and the green color resistance (G) 24, the adjacent blocks 22 covered by the blue color resistance (B) 24 The two ends of have a higher thickness to increase the film thickness height of the blue color resist (B) 24 .

In this embodiment, the block 22 with different film thickness and height at both ends is a stepped block 22, which can be formed by using a half-tone mask. Alternatively, the first block 221 and the second block 222 may also be formed sequentially.

The method of making the film thickness of each color resist film height consistent, in addition to using the blocks with different film thickness and height at both ends to adjust, can also use an adjustment layer 29. This adjustment layer 29 is formed between the color resist and the substrate, and can be used for The film thickness of the color resist 24 is increased.

Please refer to FIG. 5E to FIG. 5G , which respectively show the position types of the adjustment layer 29 in the array substrate.

Referring to FIG. 5E , the adjustment layer 29 is formed between the color resist 24 whose film thickness needs to be increased and the first substrate 20 , and is located between adjacent blocks 22 . As shown in the figure, the film thickness of the blue color resistance (B) 24 is greater than the film thickness of the red color resistance (R) 24 and the green color resistance (G) 24, but in the red color resistance (R) 24 and the green color resistance After the adjustment layer 29 is added under the resistor (G) 24, all the color resistors can be made to have the same height without affecting the original chromaticity.

Referring to FIG. 5F , the adjustment layer 29 is formed between the color resist 24 whose film thickness needs to be increased and the first substrate 20 , and its two ends are in contact with the adjacent blocks 22 . As shown in the figure, the film thickness of the blue color resistance (B) 24 is greater than the film thickness of the red color resistance (R) 24 and the green color resistance (G) 24, but in the red color resistance (R) 24 and the green color resistance After the adjustment layer 29 is added under the resistor (G) 24, all the color resistors can be made to have the same height without affecting the original chromaticity.

Please refer to FIG. 5G , the adjustment layer 29 is formed between the color resist 24 whose film thickness needs to be increased and the first substrate 20, and the block 22 is at least partially covered to the adjustment layer 29, that is, part of the block 22 is located in the adjustment layer 29. above layer 29. As shown in the figure, originally the film thickness of the blue color resist (B) 24 and the green color resist (G) 24 is greater than the film thickness of the red color resist (R) 24, but the red color resist (R) 24 is adjacent to it After the adjustment layer 29 is added under the block 22, the height of all the color resists can be equalized without affecting the original chromaticity.

It should be noted that the material of the adjustment layer 29 can be ITO, IZO, TiO ₂ , GZO, ZaO or ZNO. In the two embodiments of FIG. 5E and FIG. 5F , there is no restriction on the order in which the adjustment layer 29 and the block 22 are formed; and in the embodiment of FIG. 5F , since part of the block 22 is located above the adjustment layer 29, it must After the adjustment layer 29 is formed, the block 22 is then formed.

To sum up, the technical means of the present invention can effectively adjust the film thickness and height of each color resist on the array substrate, so it has the following advantages:

1. Improve the problem of uneven film thickness among the various color resists on the array substrate, so that the film surfaces of all color resists can be completely planarized after the polishing process.

2. To improve the film thickness gap among the color resists on the array substrate, so that the film thicknesses of the color resists are at the same height, so as to avoid the problem of discontinuity of the conductive layer.

3. Improve the film thickness gap between the color resists on the array substrate, so that the film thicknesses of the color resists are at the same height, so as to avoid the problem of discontinuous alignment of the alignment film layer.

4. To improve the film thickness gap between the color resists on the array substrate, so that the film thicknesses of the color resists are consistent in height, so as to improve the process yield of the liquid crystal display panel.

Although the present invention has been described above with preferred examples, it is not intended to limit the spirit and entities of the present invention to the above-mentioned examples. Those of ordinary skill in the art can easily understand and utilize other elements or methods to produce the same effect. Therefore, modifications made without departing from the spirit and scope of the present invention should be included in the scope of the following claims.

Claims (22)

1. An array substrate, comprising: a base; A matrix for preventing light leakage from affecting chromaticity is formed on the substrate, the matrix is composed of a plurality of blocks, and two ends of some of the blocks have different thicknesses; and A plurality of color resists are arranged on the base, and each of the color resists is formed between two adjacent blocks and covers at least one end of the two adjacent blocks respectively. 2. The array substrate according to claim 1, further comprising an array of active elements formed on the substrate. 3. The array substrate according to claim 1, wherein the two ends of the adjacent blocks covered by the same color resist have equal thicknesses. 4. The array substrate according to claim 1, wherein at least part of the blocks are stepped or have beveled sides. 5. The array substrate according to claim 1, wherein the thickness of said part of the block is 1 to 1.5 microns. 6. The array substrate according to claim 1, further comprising a conductive layer formed on the matrix and the plurality of color resists. 7. The array substrate according to claim 1, wherein the plurality of color-resistors comprise a red color-resist, a green color-resist and a blue color-resist. 8. The array substrate according to claim 7, wherein at least one of the red color resist, the green color resist and the blue color resist has a thickness of 1 to 2.5 micrometers. 9. The array substrate according to claim 1, further comprising an adjustment layer located between the color resist and the substrate. 10. The array substrate according to claim 9, wherein the material of the adjustment layer comprises indium tin oxide, indium zinc oxide, TiO ₂ , GZO, ZaO, ZNO or a combination thereof. 11. A method for manufacturing an array substrate, comprising: provide a base; forming a matrix on the upper surface of the substrate for preventing light leakage from affecting chromaticity, the matrix is composed of a plurality of blocks, wherein at least some of the blocks have different thicknesses at both ends; and A plurality of color resists are formed on the substrate, each of the color resists is formed between two adjacent blocks, and covers at least one end of the two adjacent blocks respectively. 12. The method for manufacturing an array substrate according to claim 11, wherein the step of forming the matrix on the upper surface of the substrate comprises the following steps: coating a layer of material on the substrate; coating a photoresist layer on the upper surface of the material layer; and A photolithographic etching process is performed on the material layer using a mask to form the plurality of blocks. 13. The method for manufacturing an array substrate according to claim 12, wherein the mask is a half-tone mask, so that two ends of some of the blocks have different thicknesses. 14 . The method for manufacturing an array substrate according to claim 12 , wherein the above-mentioned mask is a multi-gray scale mask, so that two ends of some of the blocks have different thicknesses. 15. The method for manufacturing an array substrate according to claim 11, wherein the step of forming the matrix on the upper surface of the substrate comprises the following steps: forming a first zone on the upper surface of the substrate; and A second block is formed on the upper surface of the first block, wherein the block is composed of the first block and the second block. 16. The method for manufacturing an array substrate according to claim 15, wherein the thickness of the first block is 1 to 1.3 microns. 17. The method for manufacturing an array substrate according to claim 15, wherein the thickness of the block is 1.1 to 1.5 microns. 18. The method for manufacturing an array substrate according to claim 15, wherein the size of the second sub-block is smaller than the size of the first sub-block. 19. The method for manufacturing an array substrate according to claim 15, further comprising forming a third sub-block on the upper surface of the first sub-block after the step of forming the second sub-block , wherein the aforementioned block is composed of the first block, the second block and the third block. 20. The method for manufacturing an array substrate according to claim 11, wherein the material of the matrix is selected from the group consisting of Cr, CrO, Ni, dark organic materials, resins and pigments. 21. The method for manufacturing an array substrate according to claim 11, further comprising forming a conductive layer on the matrix and the plurality of color resists after the step of forming a plurality of color resists on the substrate. 22. The method for manufacturing an array substrate according to claim 21, further comprising forming an alignment film layer on the conductive layer after the step of forming the conductive layer.

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