Background technology
Because the demand of display grows with each passing day, so industry drops into the development of related display with all strength.Wherein, (Cathode Ray Tube CRT) because of having excellent display quality and technology maturation, therefore monopolizes the monitor market all the year round with cathode-ray tube (CRT) again.Yet, recently since the rise of environmental protection notion for its energy resource consumption big with produce the bigger characteristic of radiant quantity, therefore add that its product flattening space is limited, can't satisfy the market trend of market for light, thin, short, little, U.S. and low consumpting power.Therefore, have that qualitative picture, space utilization efficient are good, (Thin Film Transistor Liquid Crystal Display TFTLCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.
Thin Film Transistor-LCD mainly is made of display panels (LCD pannel) and backlight module (back light module), wherein, display panels mainly is made of film transistor matrix substrate (thin film transistor array substrate), colored optical filtering substrates (color filter substrate) and the liquid crystal layer (liquid crystal layer) that is configured between the two substrates.In addition, backlight module is in order to provide this display panels required area source, so that Thin Film Transistor-LCD reaches the effect of demonstration.
Figure 1A to Fig. 1 C shows the diagrammatic cross-section of the manufacture method of existing colored optical filtering substrates.Please refer to Figure 1A, the manufacture method of existing colored optical filtering substrates comprises the following steps.At first, provide transparency carrier 110, on transparency carrier 110, form black matrix (black matrix, BM) 120 then.Then, on transparency carrier 110, form chromatic filter layer (color filter layer) 130.Then, on transparency carrier 110, form conductive layer 140, to cover chromatic filter layer 130 and black matrix 120 in the sputter mode.
Please refer to Figure 1B, multi-zone vertical alignment nematic (multi-domainvertically alignment at general wide viewing angle LCD, MVA) in the technology, adopt thrust (protrusion) or slit modes such as (silt) usually, arrange so that liquid crystal can produce the multiple domain orientation.With regard to the slit mode, its technology is roughly: form the photoresist layer 150 of patterning on conductive layer 140, wherein the photoresist layer 150 of patterning has a plurality of slit 150a, and it exposes partially conductive layer 140.Then, be that mask (mask) carries out etch process to conductive layer 140 with the photoresist layer 150 of patterning, to form the conductive layer 142 of patterning, wherein the conductive layer 142 of patterning has a plurality of slit 142a, and it exposes partial colour filter layer 130.
Then, remove the photoresist layer 150 of patterning, just form the structure shown in Fig. 1 C.So far, just tentatively finish the manufacturing of existing colored optical filtering substrates 100.It should be noted that; because the influence of wet etch process; the conductive layer 142 of patterning can produce lateral erosion (side etching) phenomenon usually; therefore the width of the slit 142a of the conductive layer 142 of patterning can be greater than the width (shown in Figure 1B) of the slit 150a of the photoresist layer 150 of pattern; and both gap L1 just are called critical dimension loss (critical dimension loss, CD loss).Generally speaking, critical dimension loss is normally greater than 0.6 micron (micrometer).Yet, along with the slit 142a of the conductive layer 142 of patterning gradually towards thin slit (fine silt) development, therefore also strict gradually, and the level of current technology will can't be accepted gradually for the requirement of critical dimension loss.
In addition, because the slit 142a of the conductive layer 142 of patterning exposes partial colour filter layer 130, therefore extraneous aqueous vapor or ion just infiltrates chromatic filter layer 130 via slit 142a easily in manufacturing process.After being assembled into display panels, aqueous vapor or ion are diffused in the liquid crystal layer by chromatic filter layer 130 easily and pollute liquid crystal.In addition, in the etch process that forms slit 142a, since impurity such as these aqueous vapors or ion make the conductive layer 142 of patterning with by the adhesion variation between the chromatic filter layer 130 that organism constituted, thereby cause the conductive layer 142 of patterning and peeling off of chromatic filter layer 130 quite easily.The sizable reason of critical dimension loss of slit 142a that this does not still cause the conductive layer 142 of patterning also causes the profile of slit 142a of conductive layer 142 of patterning uneven excessive with the critical dimension variation easily.In other words, the slit 142a of prior art will cause the fiduciary level of existing colored optical filtering substrates 100 to descend.
The function of generally using the conductive layer (or conductive layer of patterning) on film transistor matrix substrate is mainly producing electric field and circuit turn-on, thus its thickness do not need too thick, generally be about 300 to 500 dusts (
) between, resistance value is between 40 to 100Ohm/square (Ω/).And the
conductive layer 140 on the colored optical filtering substrates (or
conductive layer 142 of patterning) is except needs form electric field, usually need enough thickness with abundant covering
chromatic filter layer 130, avoid material that
chromatic filter layer 130 includes after being assembled into LCD (showing), and disengage, and then diffuse in the liquid crystal layer and pollute liquid crystal, influence the characteristic of display.The performance of the field-of-view angle of known vertical alignment type liquid crystal display device can be set at a plurality of different each other directions by the orientation (orientation) with liquid crystal molecule in the pixel and improved.European patent discloses 0884626-A2 number and discloses a kind of multiregional vertical align type (multi-domainvertically aligned) LCD, it has the zone and adjusts structure in order to adjust the orientation of liquid crystal, when imposing voltage, the liquid crystal molecule in liquid crystal layer is to be skewed arrangement and to make that the orientation of liquid crystal comprises a plurality of orientations in each pixel region.Generally speaking, the zone is adjusted structure and often is disposed on the conductive layer, and therefore after being assembled into LCD, its zone is adjusted material that structure includes and also had an opportunity to disengage and diffuse in the liquid crystal layer and pollute liquid crystal.In addition, also the organic coating layer that can use special material to make on
chromatic filter layer 130 disengages with the material of avoiding
chromatic filter layer 130 to include, and then diffuse in the liquid crystal layer and pollute liquid crystal, but the material of organic coating layer is special only to be controlled by minority manufacturer, and it is not low to obtain price.In the time of in addition on separation material is created on conductive layer, after suffering oppression, separation material cause the conductive layer generation to break, the material that makes chromatic filter layer include disengages, and then diffuse in the liquid crystal layer and pollute liquid crystal, influence the characteristic of display,
conductive layer 140 also needs enough thickness (normally approximately between 1400~1600 dusts) so that enough crushing resistances to be provided.The material of the
conductive layer 140 of general transmissive type liquid crystal display is to use indium tin oxide (indium tin oxide, ITO), but because panel surface is subjected to excessive pressure, the indium tin oxide that is positioned at the separation material below can break, and then cause the spacing (Cell gap) of regional area unusual, form zone and the brightness irregularities that other zone shows, influence the characteristic of display.
In addition, general Thin Film Transistor-LCD is because the electric field controls of use between conductive layer on the film transistor matrix substrate (or conductive layer of patterning) and colored optical filtering substrates is configured in the liquid crystal layer between the two substrates, therefore if having conductive foreign matter between the two substrates, also can influence the electric field configuration and then the pixel of foreign matter position was lost efficacy, and then form Chang Liangdian or normal dim spot, influence display and watch quality.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of colored optical filtering substrates, with the phenomenon of peeling off of the conductive layer that improves patterning.
In addition, a further object of the present invention provides a kind of display panels, and it has fiduciary level preferably.
In addition, another purpose of the present invention provides a kind of liquid crystal indicator, to improve acid resistance, alkali resistance and endurance.
Moreover another object of the present invention provides a kind of manufacture method of colored optical filtering substrates, to improve critical dimension loss.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of colored optical filtering substrates, and it comprises the conductive layer of transparency carrier, chromatic filter layer, inorganic layer and patterning, and wherein chromatic filter layer is configured on the transparency carrier.Inorganic layer is configured on the transparency carrier, and covers chromatic filter layer.The conductive layer of patterning is configured on the inorganic layer, and wherein the conductive layer of patterning has a plurality of slits, and it exposes the part inorganic layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of colored optical filtering substrates, and it comprises transparency carrier, chromatic filter layer, inorganic layer and conductive layer, and wherein chromatic filter layer is configured on this transparency carrier.Inorganic layer is configured on the transparency carrier, and covers chromatic filter layer.Conductive layer is configured on the transparency carrier, and wherein inorganic layer is between conductive layer and chromatic filter layer, and perhaps conductive layer is between inorganic layer and chromatic filter layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of display panels, and it comprises colored optical filtering substrates, subtend substrate and liquid crystal layer, and wherein liquid crystal layer is configured between colored optical filtering substrates and the subtend substrate.In addition, colored optical filtering substrates comprises the conductive layer of transparency carrier, chromatic filter layer, inorganic layer and patterning, and wherein chromatic filter layer is configured on the transparency carrier.Inorganic layer is configured on the transparency carrier, and covers chromatic filter layer.The conductive layer of patterning is configured on the inorganic layer, and wherein the conductive layer of patterning has a plurality of slits, and it exposes the part inorganic layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of display panels, and it comprises colored optical filtering substrates, subtend substrate and liquid crystal layer, and wherein liquid crystal layer is configured between colored optical filtering substrates and the subtend substrate.Colored optical filtering substrates comprises transparency carrier, chromatic filter layer, inorganic layer and conductive layer in addition, and wherein chromatic filter layer is configured on the transparency carrier.Inorganic layer is configured on the transparency carrier, and covers this chromatic filter layer.Conductive layer is configured on the transparency carrier, and wherein inorganic layer is between conductive layer and chromatic filter layer, and perhaps conductive layer is between inorganic layer and this chromatic filter layer.
According to the embodiment of the invention, display panels also comprises the glue frame, and it is configured between colored optical filtering substrates and the subtend substrate, and around liquid crystal layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of liquid crystal indicator, and it comprises backlight module and display panels, and wherein display panels is configured in the backlight module top.In addition, display panels comprises colored optical filtering substrates, subtend substrate and liquid crystal layer, and wherein liquid crystal layer is configured between colored optical filtering substrates and the subtend substrate.In addition, colored optical filtering substrates comprises the conductive layer of transparency carrier, chromatic filter layer, inorganic layer and patterning, and wherein chromatic filter layer is configured on the transparency carrier.Inorganic layer is configured on the transparency carrier, and covers chromatic filter layer.The conductive layer of patterning is configured on the inorganic layer, and wherein patterned conductive layer has a plurality of slits, and it exposes the part inorganic layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of liquid crystal indicator, and it comprises backlight module and display panels, and wherein display panels is configured in the backlight module top.In addition, display panels comprises colored optical filtering substrates, subtend substrate and liquid crystal layer, and wherein liquid crystal layer is configured between colored optical filtering substrates and the subtend substrate.In addition, colored optical filtering substrates comprises transparency carrier, chromatic filter layer, inorganic layer and conductive layer, and wherein chromatic filter layer is configured on the transparency carrier.Inorganic layer is configured on the transparency carrier, and covers chromatic filter layer.Conductive layer is configured on the transparency carrier, and wherein inorganic layer is between conductive layer and chromatic filter layer, and perhaps conductive layer is between inorganic layer and chromatic filter layer.
According to the embodiment of the invention, the conductive layer of colored optical filtering substrates contacts with inorganic layer.
According to the embodiment of the invention, colored optical filtering substrates also comprises a plurality of separation materials that are configured on inorganic layer or the conductive layer.
According to the embodiment of the invention, the separation material of colored optical filtering substrates is positioned at the chromatic filter layer top and directly contacts with this inorganic layer.
According to the embodiment of the invention, the separation material of colored optical filtering substrates is positioned at the chromatic filter layer top and directly contacts with conductive layer.
According to the embodiment of the invention, the separation material of colored optical filtering substrates is positioned on the conductive layer, and separation material is between conductive layer and inorganic layer.
According to the embodiment of the invention, colored optical filtering substrates also comprises the thrust that is positioned on the chromatic filter layer, and thrust is between conductive layer and inorganic layer.
According to the embodiment of the invention, the thrust of colored optical filtering substrates is positioned on the chromatic filter layer, and thrust is between chromatic filter layer and inorganic layer.
According to the embodiment of the invention, the conductive layer of colored optical filtering substrates is the conductive layer of patterning, and the conductive layer of patterning has a plurality of slits.
According to the embodiment of the invention, colored optical filtering substrates also comprises black matrix, and it is configured on the transparency carrier, and chromatic filter layer covers the black matrix of at least a portion.
According to the embodiment of the invention, the separation material of colored optical filtering substrates is positioned on the black matrix and directly contacts with conductive layer.
According to the embodiment of the invention, colored optical filtering substrates also comprises organic coating layer (organic overcoating layer, OC layer), and it is configured between chromatic filter layer and the inorganic layer.
According to the embodiment of the invention, the material of inorganic layer can be stupalith or class diamond carbon (DiamondLike Carbon, DLC).In addition, stupalith can be selected from the group that forms by silicon dioxide, silicon oxynitride, titania, titanium oxynitrides, quartz, silicon oxide carbide, chromium oxide, nitrogen chromium oxide, aluminium oxide and aluminum oxynitride one of them.
According to the embodiment of the invention, the thickness of inorganic layer can be between between 10 dusts to 2 micron.In addition, the thickness of preferred inorganic layer can be between 50 dust to 500 dusts.
According to the embodiment of the invention, the thickness of conductive layer can be between 100 dust to 1000 dusts.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of manufacture method of colored optical filtering substrates, and it comprises the following steps.At first, on transparency carrier, form chromatic filter layer.Then, on transparency carrier, form inorganic layer, to cover chromatic filter layer.Then, form the conductive layer of patterning on inorganic layer, wherein the conductive layer of patterning has a plurality of slits, exposes the part inorganic layer.
Based on above-mentioned purpose or other purpose, the present invention proposes a kind of manufacture method of colored optical filtering substrates, and it comprises the following steps.At first, on transparency carrier, form chromatic filter layer.Then, on transparency carrier, form inorganic layer, to cover this chromatic filter layer.Then, on transparency carrier, form conductive layer, wherein form conductive layer behind the formation inorganic layer earlier, perhaps form inorganic layer behind the formation conductive layer earlier.
According to the embodiment of the invention, after forming conductive layer and inorganic layer, also be included in and form a plurality of separation materials on conductive layer or the inorganic layer.
According to the embodiment of the invention, after forming conductive layer, also comprise patterned conductive layer, with the conductive layer of formation patterning, and the conductive layer of patterning has a plurality of slits.
According to the embodiment of the invention, before forming this chromatic filter layer, can also on transparency carrier, form black matrix, and chromatic filter layer covers black matrix.
According to the embodiment of the invention, after forming chromatic filter layer, also be included in and form organic coating layer on the chromatic filter layer, and inorganic layer covers this organic coating layer.
According to the embodiment of the invention, the method that forms inorganic layer can be physical gas-phase deposition (PVD), sputtering technology, chemical vapor deposition method (CVD), plasma gain chemical vapour deposition technique (PECVD) or sol-gel process (sol-gel).
Based on above-mentioned; the present invention is before forming conductive layer; form inorganic layer earlier; and this inorganic layer not only can be protected the structure that is positioned at its below; the side etching phenomenon that is produced in the time of also can improving the conductive layer that on conductive layer, forms patterning; therefore compared with prior art, the present invention not only can dwindle critical dimension loss, can also improve integrally-built acid resistance, alkali resistance, endurance and resistance to pressure.In addition, the present invention also can select to form after the conductive layer earlier, forms inorganic layer again, still has above-mentioned effect.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and in conjunction with the accompanying drawings, be described in detail below.
Embodiment
[first embodiment]
Fig. 2 A shows the diagrammatic cross-section according to the liquid crystal indicator of first embodiment of the invention, and the diagrammatic cross-section of the colored optical filtering substrates of Fig. 2 B exploded view 2A.Please refer to Fig. 2 A, the liquid crystal indicator 10 of present embodiment comprises direct type backlight module 200 and display panels 300, and wherein display panels 300 is configured on the direct type backlight module 200.In addition, direct type backlight module 200 comprises framework 210, a plurality of lamps source 220 and diffusing panel (diffusion plate) 230, and wherein these lamp sources 220 are configured in the framework 210, and diffusing panel 230 is configured on the framework 210.The light that above-mentioned lamp source 220 is sent forms area source after the surperficial outgoing of diffusing panel 230.Though present embodiment adopts direct type backlight module 200 that area source is provided, yet present embodiment also can adopt side incident type backlight module so that area source to be provided.
Display panels 300 comprises colored optical filtering substrates 310, subtend substrate (opposite substrate) 320 and liquid crystal layer 330, and wherein liquid crystal layer 330 is configured between colored optical filtering substrates 310 and the subtend substrate 320.In addition, display panels 300 also can comprise glue frame 340, it is configured between colored optical filtering substrates 310 and the subtend substrate 330, and around liquid crystal layer 330, and in order to connect the electric contact (not showing) between colored optical filtering substrates and film transistor matrix substrate.In the present embodiment, subtend substrate 320 is a film transistor matrix substrate, yet subtend substrate 320 also can be diode matrix substrate or other active component matrix base plate.In another embodiment, colored optical filtering substrates also can be the COA substrate, and the subtend substrate is the glass substrate with public electrode (common electrode), and wherein the COA substrate is color filter film (Color Filter On Array, structure COA) on film transistor matrix.Moreover, colored optical filtering substrates 310 can be used for multi-field vertical assigned LCD panel (MVA-LCD) or vertical alignment mode liquid crystal display device (Vertically Alignment LCD, VA-LCD) in.
Please refer to Fig. 2 B, colored optical filtering substrates 310 comprises the conductive layer 3152 of transparency carrier 3110, chromatic filter layer 3130, inorganic layer 3140 and patterning, and wherein chromatic filter layer 3130 is configured on the transparency carrier 3110.In addition, inorganic layer 3140 is configured on the transparency carrier 3110, and covers chromatic filter layer 3130.In addition, the conductive layer 3152 of patterning is configured on the inorganic layer 3140, and wherein the conductive layer 3152 of patterning has a plurality of slit 3152a, and it exposes part inorganic layer 3140.In the present embodiment, colored optical filtering substrates 310 also can comprise black matrix 3120, and it is configured on the transparency carrier 3110, and chromatic filter layer 3130 covers black matrix 3120.Yet present embodiment does not limit colored optical filtering substrates 310 need comprise black matrix 3120.
In the present embodiment, transparency carrier 3110 is glass substrates.In addition, transparency carrier 3110 also can be the transparency carrier that quartz base plate or other material constitute.The material of black matrix 3120 can be shading resin or metal, and the thickness of chromatic filter layer 3130 can be greater than 2 microns (μ m).In addition, the thickness of the conductive layer 3152 of patterning can be 700 dusts, and the material of the conductive layer 3152 of patterning can be indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO), Zinc-aluminium (aluminum zinc oxide, AZO) or other transparent oxide.
Experimental example such as the table 1 of first embodiment:
The inorganic layer materials of experimental example A, it uses sputtering technology at the pure silicon target, and the flow of oxygen is 8sccm (a standard per minute cubic centimetre) during sputter, and the flow of nitrogen is formed by 40sccm.
The inorganic layer materials of experimental example B, C, it uses sputtering technology at 90% silicon and 10% aluminium alloy target, and the flow of oxygen is formed by 8sccm simultaneously.
The inorganic layer materials of experimental example D, it uses sputtering technology at pure chromium target, and the flow of carbon dioxide is 228.3sccm simultaneously, and the flow of nitrogen is formed by 33sccm.
The inorganic layer materials of experimental example E~G uses sputtering technology at pure chromium target, and the flow of carbon dioxide is formed by 500sccm simultaneously.
Table 1
Above-mentioned experimental example is the measurement that LCD MODULE that the colored optical filtering substrates that utilizes the present invention to make is formed is done.
Reliability test: display device is switched to after black and white mosaic picture continues to keep 168 hours with 55 degree high temperature, switch to 25% full grey screen, the resident phenomenon of mosaic frame image (Image sticking) does not take place in visual inspection after five minutes, promptly declares OK.
More specifically, the thickness of inorganic layer 3140 can be preferably between 50 dust to 500 dusts between between 10 dusts to 2 micron, and optimum is 200 dusts.In the present embodiment, the material of inorganic layer 3140 is silicon oxynitrides, and the chemical formula of silicon oxynitride then is Si
xN
yO
z, wherein x:1~3, y:0~2, z:0~4.Yet that the material of inorganic layer 3140 also can be that stupalith, class diamond carbon or other have is acidproof, alkali resistant, transparent and the inorganic material of non-conductive characteristic or the inorganic layer 3140 that the multilayer inorganic material is constituted.Above-mentioned stupalith is mainly nonmetallic mineral compound, and this stupalith can be by silicon dioxide, titania, titanium oxynitrides, quartz, silicon oxide carbide (for example: SiOC), chromium oxide (CrO to be selected from
x), nitrogen chromium oxide (CrN
xO
y), aluminium oxide (AlO
x), aluminum oxynitride (AlN
xO
y), nitrogen oxygen aluminium silicon (SiAlON), zinc paste (ZnO
x), yttria (YO
x) or zirconia (ZrO
x) group that formed one of them, wherein the chemical formula of titanium oxynitrides then is Ti
xN
yO
zAbout the manufacture method of colored optical filtering substrates 310 will describe in detail as after.
The diagrammatic cross-section of the manufacture method of the colored optical filtering substrates of Fig. 3 A to Fig. 3 B displaying first embodiment of the invention.Please refer to Fig. 3 A, the manufacture method of the colored optical filtering substrates of present embodiment comprises the following steps.At first, provide transparency carrier 3110, on transparency carrier 3110, form black matrix 3120 then.When the material of black matrix 3120 was the shading resin, the method that forms black matrix 3120 was to form black matrix material layer on transparency carrier 3110, then this black matrix material layer is carried out exposure technology and developing process, to form black matrix 3120.Perhaps, when the material of black matrix 3120 is metal, the method that forms black matrix 3120 is to form black matrix material layer on transparency carrier 3110, then this black matrix material layer is carried out exposure technology, developing process and etch process successively, to form black matrix 3120.
Then, form chromatic filter layer 3130 on transparency carrier 3110, the method that wherein forms chromatic filter layer 3130 can be exposure technology and developing process.Perhaps, the method for formation chromatic filter layer 3130 also can be an ink-jetting process.Yet present embodiment does not limit needs to form black matrix 3120, and present embodiment also can directly form chromatic filter layer 3130 on transparency carrier 3110.
Come, forming on chromatic filter layer 3130 for example is the inorganic layer 3140 that includes silicon oxynitride again.More specifically, the method for formation inorganic layer 3140 can be physical gas-phase deposition, sputtering technology, chemical vapor deposition method, plasma gain chemical vapour deposition technique or sol-gel process.With regard to sputtering technology, the method that forms the inorganic layer 3140 that silicon oxynitride constituted be aerating oxygen and nitrogen as reacting gas, wherein the throughput ratio of oxygen and nitrogen is 1: 5.For example, the flow of oxygen is 8sccm (a standard per minute cubic centimetre), and the flow of nitrogen is 40sccm.In addition, the employed sputtering equipment of sputtering technology can be a RF collocation direct supply (DC power).In addition, with regard to sol-gel process, sol-gel process comprise infusion process (dipping), spin-on glasses method (Spin-On-Glass, SOG), spin-coating method (spin coating) or scraper forming process (spinless coating).
Then, form conductive layer 3150 on transparency carrier 3110, to cover chromatic filter layer 3130 and black matrix 3120, the method that wherein forms conductive layer 3150 can adopt sputtering technology.
Please refer to Fig. 3 B, form the photoresist layer 3160 of patterning on conductive layer 3150, wherein the photoresist layer 3160 of patterning has a plurality of slit 3160a, and it exposes partially conductive layer 3150.Then, be that mask carries out etch process to conductive layer 3150 with the photoresist layer 3160 of patterning, to form the conductive layer 3152 of patterning, wherein the conductive layer 3152 of patterning has a plurality of slit 3152a, and it exposes part inorganic layer 3140.Then, remove the photoresist layer 3160 of pattern.So far, just tentatively finish the manufacturing of colored optical filtering substrates 310, shown in Fig. 2 B.
It should be noted that therefore in etching process, lateral erosion (side etching) phenomenon can be improved because the conductive layer 3152 of patterning covers on the inorganic layer 3140.In other words, compared with prior art, the gap of the width of the slit 3160a of the width of the slit 3152a of the conductive layer 3152 of the patterning of present embodiment and the photoresist layer 3160 of pattern can be dwindled.More specifically, under identical process conditions, the critical dimension loss of prior art is greater than 0.6 micron, and the critical dimension loss of present embodiment can be controlled between 0.2 to 0.3 micron.Below will carry out the comparison of alkali resistance and endurance with the formed colored optical filtering substrates 310 of present embodiment to the formed colored optical filtering substrates 100 of prior art.
With regard to alkali resistance part, with formed colored optical filtering substrates 100 of prior art and the formed colored optical filtering substrates 310 of present embodiment place concentration be 9% and temperature be the potassium hydroxide solutions of 57 degree Celsius.When phenomenon that peeling off has appearred in the conductive layer 142 of the patterning in the formed colored optical filtering substrates 100 of prior art, the conductive layer 3152 of the patterning of present embodiment still is kept perfectly.In other words, compared with prior art, the ability of formed colored optical filtering substrates 310 opposing ions of present embodiment and hydrone invasion can improve, and improves the fiduciary level of product.
With regard to the endurance part, it is that 60 delustering of degree Celsius cause resist liquid that formed colored optical filtering substrates 100 of prior art and the formed colored optical filtering substrates 310 of present embodiment are placed temperature, wherein deluster cause resist liquid consist of the inferior stone wind of 30% dimethyl (dimethyl sulfoxide, DMSO) with 70% monoethanolamine (monoethanol amine, MEA) in.When phenomenon that peeling off has appearred in the conductive layer 142 of the patterning in the formed colored optical filtering substrates 100 of prior art, the conductive layer 3152 of the patterning of present embodiment still is kept perfectly.In other words, compared with prior art, the ability of the formed colored optical filtering substrates of present embodiment 310 opposing chemicalss invasions can improve, and in order to the carrying out of subsequent technique, and improves the fiduciary level of product.
From the above, formed compared to existing technology colored optical filtering substrates 100, because the present invention is configured in conductive layer 3152 belows of patterning with inorganic layer 3140, so the formed colored optical filtering substrates 310 of the present invention has preferred acid resistance, alkali resistance and endurance.In addition, compared with prior art, the critical dimension loss of the formed colored optical filtering substrates 310 of the present invention can dwindle, so that be applied in the product that adopts thin slit designs.
[second embodiment]
Fig. 4 A to Fig. 4 C shows the diagrammatic cross-section according to the manufacture method of the colored optical filtering substrates of second embodiment of the invention.Please refer to Fig. 4 A, present embodiment is similar to the aforementioned embodiment, its difference is: form on transparency carrier 3110 after black matrix 3120 and the chromatic filter layer 3130, form organic coating layer 4110 on transparency carrier 3110, to cover black matrix 3120 and chromatic filter layer 3130.In addition, the method for formation organic coating layer 4110 can be method of spin coating (spin coating) or scraper forming process (spinless coating).In addition, the material of organic coating layer 4110 can be a photo anti-corrosion agent material; Even the organic coating layer 4110 that can adopt lower grade is to improve Pollutants Diffusion in the chromatic filter layer 3130 to liquid crystal layer 330 and pollute liquid crystal.Then, on organic coating layer 4110, form inorganic layer 3140 and conductive layer 3150 successively.
Please refer to Fig. 4 B, form the photoresist layer 3160 of pattern on conductive layer 3150, wherein the photoresist layer 3160 of pattern has a plurality of slit 3160a, and it exposes partially conductive layer 3150.Then, be that mask carries out etch process to conductive layer 3150 with the photoresist layer 3160 of pattern, to form the conductive layer 3152 of patterning, wherein the conductive layer 3152 of patterning has a plurality of slit 3152a, and it exposes part inorganic layer 3140.
Please refer to Fig. 4 C, after the conductive layer 3152 that forms patterning, remove the photoresist layer 3160 of pattern.So far, just tentatively finish the manufacturing of colored optical filtering substrates 410.As first embodiment, the colored optical filtering substrates 410 of present embodiment still has acid resistance, alkali resistance and endurance preferably.In addition, compared with prior art, the critical dimension loss of the formed colored optical filtering substrates 410 of the present invention is less.
[the three~six embodiment]
Fig. 5 A to Fig. 5 D show according to the present invention third and fourth, the diagrammatic cross-section of the colored optical filtering substrates of five, six embodiment.Please refer to Fig. 5 A, this colored optical filtering substrates 510a is different, and the first embodiment part is: be formed with black matrix 3120, chromatic filter layer 3130, inorganic layer 3140 and conductive layer 3150 on transparency carrier 3110, as shown in Figure 3A.Then, on conductive layer 3150, form a plurality of separation materials 5110 again, to finish the making of colored optical filtering substrates 510a.In addition, the material of these separation materials 5110 can be a photo anti-corrosion agent material.And the shape of separation material 5110 can be a column or spherical.In addition, also can be the separation material 5110 of tool stickiness.When the material of separation material 5110 is photo anti-corrosion agent material, the method that forms separation material 5110 can form photo anti-corrosion agent material layer (not showing) earlier on conductive layer 3150, then this photo anti-corrosion agent material layer is carried out exposure technology and developing process, to form separation material 5110.In addition, the colored optical filtering substrates 510a of present embodiment also can be applied in the display panels 300 shown in Fig. 2 A.For example, this colored optical filtering substrates 510a for example is applied to stable twisted nematic liquid crystal indicator (Twisted Nematic LCD device, TN-LCD device), STN Super TN type liquid crystal indicator (Super Twisted Nematic LCD device, STN-LCDdevice) or in the vertical alignment mode liquid crystal display device (Vertically Alignment LCD device, VA-LCD device).
The experimental result such as the table 2 of the 3rd embodiment experimental example.
Table 2
Table 3 is for example to be glass substrate with substrate 3110, directly plates CrO on substrate 3110
x, plate ITO afterwards again, then, be that the C-light source measures the transmissivity at 420nm and 550nm with the light source of spectrometer.
Table 3
Please refer to Fig. 5 B, present embodiment is the fourth embodiment of the present invention, and this colored optical filtering substrates 510b is different from the second embodiment part and is: be formed with black matrix 3120, chromatic filter layer 3130, organic coating layer 4110, inorganic layer 3140 and conductive layer 3150 successively on transparency carrier 3110, as Fig. 4 A.Then, on conductive layer 3150, form a plurality of separation materials 5110 (only putting on display among the figure), to finish the making of colored optical filtering substrates 510b.Similarly, this kind colored optical filtering substrates 510b also can be applied in the display panels 300 shown in Fig. 2 A.
With regard to prior art, after suffering oppression, separation material cause conductive layer 140 generations to break, and the thickness of conductive layer 140 is usually between 1400~1600 dusts.Yet for the present invention, because conductive layer 3150 belows dispose inorganic layer 3140, therefore compared with prior art, the thickness of conductive layer 3150 can drop between 100 dust to 1000 dusts.In other words, compared with prior art, the present invention can reduce the cost of manufacture of colored optical filtering substrates, and keeps original voltage endurance capability.In addition, because therefore conductive layer 3150 thinner thicknesses can have the raising effect for the optical transmission rate of wavelength between 420 to 550 nanometers.In addition, under the situation of the thickness attenuation of conductive layer 3150, the situation of the color shift of coloured light (for example ruddiness and green glow) also can be improved.Moreover this inorganic layer 3140 is a light transmissive material, and both arrange in pairs or groups this inorganic layer 3140 and conductive layer 3150 with suitable thickness, more can improve the optical transmission rate.Similarly, inorganic layer 3140 also can improve the situation of Pollutants Diffusion to the liquid crystal layer in the chromatic filter layer 3130.
Please refer to Fig. 5 C, present embodiment is the fifth embodiment of the present invention, and Fig. 5 A and 5C difference are: the stacking order of inorganic layer 3140 and conductive layer 3150.In the colored optical filtering substrates 510c of Fig. 5 C, form conductive layer 3150, inorganic layer 3140 and separation material 5110 successively.Because inorganic layer 3140 covers conductive layers 3150, so inorganic layer 3140 also can improve the situation of Pollutants Diffusion to the liquid crystal layer in the chromatic filter layer 3130.Wherein, can also form on conductive layer 3150 again and adjust the thrust (protrusion) 6110 that the liquid crystal arrangement direction is used after form conductive layer 3150, the material of these thrusts 6110 can be a photo anti-corrosion agent material.In more detail, the method that forms thrust 6110 can be to form photo anti-corrosion agent material layer (not showing) earlier on conductive layer 3150, then this photo anti-corrosion agent material layer is carried out exposure technology and developing process, to form thrust 6110.The formation position of thrust 6110 for example is formed between inorganic layer and the conductive layer, shown in Fig. 5 E.Certainly, also can form thrust 6110 on chromatic filter layer 3130, shown in Fig. 5 F.In addition, the colored optical filtering substrates 510a of present embodiment also can be applied in the display panels 300 shown in Fig. 2 A.So can be applicable to the vertical alignment mode liquid crystal display device as the conductive layer 3152 of patterning.
Please refer to Fig. 5 D, present embodiment is the sixth embodiment of the present invention, and Fig. 5 B and 5D difference are: the stacking order of inorganic layer 3140 and conductive layer 3150.In the colored optical filtering substrates 510d of Fig. 5 D, form organic coating layer 4110, conductive layer 3150, inorganic layer 3140 and separation material 5110 successively.Because inorganic layer 3140 covers conductive layers 3150, so inorganic layer 3140 also can improve the situation of Pollutants Diffusion to the liquid crystal layer in the chromatic filter layer 3130.Any those of skill in the art embodiments of the invention (for example the 5th embodiment of the 3rd embodiment of Fig. 5 A and Fig. 5 C) as can be known can be configured in separation material the zone of black matrix" top fully as the 4th embodiment of Fig. 5 B and the 6th embodiment of Fig. 5 D.
[the 7th embodiment]
Fig. 6 A to Fig. 6 C shows the diagrammatic cross-section according to the manufacture method of a kind of colored optical filtering substrates of seventh embodiment of the invention.Please refer to Fig. 6 A, present embodiment is similar to above-mentioned first embodiment, and its difference is: form on transparency carrier 3110 after black matrix 3120 and the chromatic filter layer 3130, form conductive layer 3150 on chromatic filter layer 3130.Please then refer to Fig. 6 B, form the photoresist layer 3160 of patterning on conductive layer 3150, wherein the photoresist layer 3160 of patterning has a plurality of slit 3160a.Then, be that mask carries out etch process to conductive layer 3150 with the photoresist layer 3160 of pattern, to form the conductive layer 3152 of patterning, wherein the conductive layer 3152 of patterning has a plurality of slit 3152a.
Please refer to Fig. 6 C, after the conductive layer 3152 that forms patterning, remove the photoresist layer 3160 of patterning.Then, on the conductive layer 3152 of patterning, form inorganic layer 3140 and separation material 5110 successively.So far, just tentatively finish the manufacturing of colored optical filtering substrates 610.As first embodiment, the colored optical filtering substrates 610 of present embodiment still has acid resistance, alkali resistance and endurance preferably.
Please continue 6C with reference to figure, in more detail, the colored optical filtering substrates 610 of present embodiment and the colored optical filtering substrates of first embodiment 410 be different be in: in the present embodiment, inorganic layer 3140 is configured on the conductive layer 3152 of patterning, and covers slit 3152a.Therefore, this colored optical filtering substrates 610 still can improve Pollutants Diffusion in the chromatic filter layer 3130 to liquid crystal layer and pollute liquid crystal.In addition, inorganic layer 3140 also can strengthen the conductive layer 3152 of patterning and the pressure that separation material 5110 can bear.
[the 8th embodiment]
Fig. 7 A to Fig. 7 C shows the diagrammatic cross-section according to the manufacture method of a kind of colored optical filtering substrates of eighth embodiment of the invention.Please refer to Fig. 7 A, present embodiment is similar to above-mentioned second embodiment, its difference is: form successively on transparency carrier 3110 after black matrix 3120, chromatic filter layer 3130 and the organic coating layer 4110, form conductive layer 3150 on organic coating layer 4110.At this moment, organic coating layer 4110 contacts with conductive layer 3150.Then, please refer to Fig. 7 B, conductive layer 3150 is carried out etch process.More specifically, at first form the photoresist layer 3160 of patterning on conductive layer 3150, wherein the photoresist layer 3160 of patterning has a plurality of slit 3160a.Then, be that mask carries out etch process to conductive layer 3150 with the photoresist layer 3160 of patterning, to form the conductive layer 3152 of patterning, wherein the conductive layer 3152 of patterning has a plurality of slit 3152a.
Please refer to Fig. 7 C, after removing the photoresist layer 3160 of patterning, on the conductive layer 3152 of patterning, form inorganic layer 3140 and separation material 5110 successively, and inorganic layer 3140 contacts with separation material 5110.So far, just tentatively finish the manufacturing of colored optical filtering substrates 710.This is as second embodiment, and the colored optical filtering substrates 710 of present embodiment still has acid resistance, alkali resistance and endurance preferably.Similarly, because inorganic layer 3140 is configured on the conductive layer 3152 of patterning, so inorganic layer 3140 can improve Pollutants Diffusion in the chromatic filter layer 3130 to liquid crystal layer and pollute liquid crystal.In addition, (the compare existing lower-cost) organic coating layer 4110 that also can adopt lower grade is to improve Pollutants Diffusion in the chromatic filter layer 3130 to liquid crystal layer 330 and pollute liquid crystal.In addition, inorganic layer 3140 also can improve the conductive layer 3152 of patterning and the voltage endurance capability of separation material 5110.
[the 9th embodiment]
Fig. 8 shows the diagrammatic cross-section according to the manufacture method of a kind of colored optical filtering substrates of ninth embodiment of the invention.Please refer to Fig. 8, present embodiment is similar to above-mentioned the 3rd embodiment, its difference is: form successively on transparency carrier 3110 after black matrix 3120, chromatic filter layer 3130, inorganic layer 3140 and the conductive layer 3150, on the conductive layer 3150 on black matrix 3120 zones, form separation material 5110, and conductive layer 3150 contacts with separation material 5110.In addition, this gap thing 5110 only is positioned at the zone of black matrix 3120 tops, and the impurity that further lowering breaks after separation material 5110 suffers oppression causes 3130 of chromatic filter layers has the chance of polluting liquid crystal.Any those of skill in the art present embodiment as can be known also can be before or after separation material 5110 forms carry out Patternized technique with conductive layer 3150 and form the conductive layer 3152 of patterning.
[the tenth embodiment]
Fig. 9 shows the diagrammatic cross-section according to the manufacture method of a kind of colored optical filtering substrates of tenth embodiment of the invention.Please refer to Fig. 9, present embodiment is similar to above-mentioned the 9th embodiment, its difference is: form successively on transparency carrier 3110 after black matrix 3120, chromatic filter layer 3130, conductive layer 3150 and the inorganic layer 3140, form separation material 5110 on the inorganic layer 3140 in the zone above black matrix 3120, and inorganic layer 3140 contacts with separation material 5110.Similarly, separation material 5110 only is positioned at black matrix 3120 upper areas, and the impurity that further lowering breaks after separation material 5110 suffers oppression causes 3130 of chromatic filter layers has the chance of polluting liquid crystal.Any those of skill in the art conductive layer 3150 of present embodiment as can be known also can carry out Patternized technique and form the conductive layer 3152 of patterning before inorganic layer 3140 forms.
[the 11 embodiment]
Figure 10 A to Figure 10 C shows the diagrammatic cross-section according to the manufacture method of three kinds of colored optical filtering substrates of eleventh embodiment of the invention.Please refer to Figure 10 A, present embodiment is similar to above-mentioned the 5th embodiment, and its difference is: form successively after black matrix 3120, chromatic filter layer 3130, conductive layer 3150 and the separation material 5110 on transparency carrier 3110, form inorganic layer 3140 again.Wherein, part inorganic layer 3140 is formed on separation material 5110 tops and contacts.Any those of skill in the art conductive layer 3150 of present embodiment as can be known also can carry out Patternized technique and form the conductive layer 3152 of patterning before inorganic layer 3140 forms.Black matrix 3120 also can be to form chromatic filter layer 3130 earlier with the sequencing that chromatic filter layer 3130 forms, and forms black matrix" 3120 again.After forming conductive layer 3150, also can generate the zone and adjust the thrust 6110 of structure in order to adjust liquid crystal aligning.Then, cover thrust with inorganic layer 3140 again, shown in Figure 10 B.In addition, please refer to Figure 10 C, the thrust 6110 that generates adjustment structure in zone after forming chromatic filter layer 3130 covers this thrust 6110 with conductive layer 3150, inorganic layer 3140 afterwards more successively in order to adjust liquid crystal aligning.Therefore inorganic layer 3140 is except improving chromatic filter layer 3130, can also avoid the zone to adjust Pollutants Diffusion in the thrust 6110 of structure to liquid crystal layer and pollute outside the voltage endurance capability of liquid crystal, the conductive layer 3152 that improves patterning and separation material 5110, also can avoid the conducted electricity foreign matter conducting two substrates that produces in the manufacturing process and influence the display display quality.
[the 12 embodiment]
Figure 11 A to Figure 11 C shows the diagrammatic cross-section according to the manufacture method of three kinds of colored optical filtering substrates of twelveth embodiment of the invention.Please refer to accompanying drawing 11A, present embodiment is similar to above-mentioned the 6th embodiment, its difference is: form successively on transparency carrier 3110 after black matrix 3120, chromatic filter layer 3130, organic coating layer 4110, conductive layer 3150 and the separation material 51105, form inorganic layer 3140 on separation material, and inorganic layer 3140 contacts with separation material 5110.The conductive layer of present embodiment also can be before inorganic layer 3140 forms any those of skill in the art as can be known, carries out Patternized technique and forms the conductive layer 3152 of patterning.As for, black matrix 3120 also can be to form chromatic filter layer earlier with the sequencing that chromatic filter layer 3130 forms, and forms black matrix" 3120 again.In addition, after forming conductive layer 3150, also can generate the zone and adjust the thrust 6110 of structure in order to adjust the liquid crystal orientation.Then, cover thrust 6110 with inorganic layer 3140 again, as Figure 11 B.The thrust 6110 that also can generate adjustment structure in zone after forming organic coating layer 4110 covers thrust 6110 with conductive layer 3150, inorganic layer 3140, as Figure 11 C more successively in order to adjust liquid crystal aligning.Therefore inorganic layer 3140 is except improving chromatic filter layer 3130, organic coating layer 4110, and the zone adjust Pollutants Diffusion in the thrust 6110 of structure to liquid crystal layer and pollute liquid crystal so improve the conductive layer 3152 of patterning and the voltage endurance capability of separation material 5110 outside, also can avoid the conducted electricity foreign matter conducting two substrates that produces in the manufacturing process and influence the display display quality.
What deserves to be mentioned is, in the various embodiments described above, when if inorganic layer is last one technology of colored optical filtering substrates, the inorganic layer that covers on the electric contact of colored optical filtering substrates can adopt general etch process to remove, perhaps before forming inorganic layer, cover in order to connect the electric contact between colored optical filtering substrates and film transistor matrix substrate with mask earlier.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to qualification the present invention, any those of skill in the art, without departing from the spirit and scope of the present invention; when can doing a little change and modification, thus protection scope of the present invention with claim the person of being defined be as the criterion.