CN100370065C - β－Ga2O3单晶生长方法、薄膜单晶生长方法、Ga2O3发光器件及其制造方法 - Google Patents

β－Ga2O3单晶生长方法、薄膜单晶生长方法、Ga2O3发光器件及其制造方法 Download PDF

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Publication number: CN100370065C
Authority: CN; China
Prior art keywords: substrate; film; type; monocrystalline; single crystal
Prior art date: 2003-02-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CNB2004800050077A

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English (en)

Chinese (zh)

Other versions

CN1754013A (zh

Inventor

一之濑升

岛村清史

青木和夫

恩卡纳西翁·安东尼亚·加西亚·比略拉

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Waseda University

Original Assignee

Waseda University

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-02-24

Filing date

2004-02-16

Publication date

2008-02-20

2004-02-16 Application filed by Waseda University filed Critical Waseda University

2006-03-29 Publication of CN1754013A publication Critical patent/CN1754013A/zh

2008-02-20 Application granted granted Critical

2008-02-20 Publication of CN100370065C publication Critical patent/CN100370065C/zh

2024-02-16 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

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CNB2004800050077A 2003-02-24 2004-02-16 β－Ga2O3单晶生长方法、薄膜单晶生长方法、Ga2O3发光器件及其制造方法 Expired - Fee Related CN100370065C (zh)

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Application Number	Priority Date	Filing Date	Title
JP2003046552A JP4630986B2 (ja)	2003-02-24	2003-02-24	β−Ｇａ２Ｏ３系単結晶成長方法
JP046552/2003		2003-02-24
JP066020/2003		2003-03-12
JP137916/2003		2003-05-15

Publications (2)

Publication Number	Publication Date
CN1754013A CN1754013A (zh)	2006-03-29
CN100370065C true CN100370065C (zh)	2008-02-20

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