[go: up one dir, main page]

ATE251329T1 - Flash-speichersystem mit reduzierten störungen und verfahren dazu - Google Patents

Flash-speichersystem mit reduzierten störungen und verfahren dazu

Info

Publication number
ATE251329T1
ATE251329T1 AT96925572T AT96925572T ATE251329T1 AT E251329 T1 ATE251329 T1 AT E251329T1 AT 96925572 T AT96925572 T AT 96925572T AT 96925572 T AT96925572 T AT 96925572T AT E251329 T1 ATE251329 T1 AT E251329T1
Authority
AT
Austria
Prior art keywords
read
cells
circuitry
array
flash memory
Prior art date
Application number
AT96925572T
Other languages
English (en)
Inventor
Frankie F Roohparvar
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE251329T1 publication Critical patent/ATE251329T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Read Only Memory (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)
  • Near-Field Transmission Systems (AREA)
AT96925572T 1995-08-01 1996-07-29 Flash-speichersystem mit reduzierten störungen und verfahren dazu ATE251329T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/509,876 US5617350A (en) 1995-08-01 1995-08-01 Flash memory system having reduced disturb and method
PCT/US1996/012444 WO1997005623A1 (en) 1995-08-01 1996-07-29 Flash memory system having reduced disturb and method

Publications (1)

Publication Number Publication Date
ATE251329T1 true ATE251329T1 (de) 2003-10-15

Family

ID=24028450

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96925572T ATE251329T1 (de) 1995-08-01 1996-07-29 Flash-speichersystem mit reduzierten störungen und verfahren dazu

Country Status (8)

Country Link
US (1) US5617350A (de)
EP (1) EP0842514B1 (de)
JP (1) JP3548830B2 (de)
KR (1) KR100308745B1 (de)
AT (1) ATE251329T1 (de)
AU (1) AU6604796A (de)
DE (1) DE69630228T2 (de)
WO (1) WO1997005623A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970022A (en) * 1997-03-21 1999-10-19 Winbond Electronics Corporation Semiconductor memory device with reduced read disturbance
US5825715A (en) * 1997-05-13 1998-10-20 Cypress Semiconductor Corp. Method and apparatus for preventing write operations in a memory device
DE19742176C1 (de) * 1997-09-24 1999-04-08 Siemens Ag Verfahren zur Verwendung beim Einsatz von EEPROMs als Programmspeicher
US6493270B2 (en) 1999-07-01 2002-12-10 Micron Technology, Inc. Leakage detection in programming algorithm for a flash memory device
US6108241A (en) * 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell
TW559814B (en) * 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6597609B2 (en) 2001-08-30 2003-07-22 Micron Technology, Inc. Non-volatile memory with test rows for disturb detection
EP1359591B1 (de) * 2002-04-30 2006-07-05 STMicroelectronics S.r.l. Methode zur Reduzierung von ungewolltem Löschen beim Programmieren eines nichtflüchtigen NROM
KR100546134B1 (ko) * 2004-03-31 2006-01-24 주식회사 하이닉스반도체 입출력을 멀티플렉스 하는 메모리 장치
US7804714B1 (en) * 2007-02-21 2010-09-28 National Semiconductor Corporation System and method for providing an EPROM with different gate oxide thicknesses
IT1394027B1 (it) 2009-05-11 2012-05-25 Mg 2 Srl Macchina per il riempimento di capsule con prodotti farmaceutici
US10593397B1 (en) * 2018-12-07 2020-03-17 Arm Limited MRAM read and write methods using an incubation delay interval
US10783957B1 (en) 2019-03-20 2020-09-22 Arm Limited Read and logic operation methods for voltage-divider bit-cell memory devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317535A (en) * 1992-06-19 1994-05-31 Intel Corporation Gate/source disturb protection for sixteen-bit flash EEPROM memory arrays
US5434815A (en) * 1994-01-19 1995-07-18 Atmel Corporation Stress reduction for non-volatile memory cell

Also Published As

Publication number Publication date
DE69630228T2 (de) 2004-06-24
EP0842514A4 (de) 1999-09-08
AU6604796A (en) 1997-02-26
DE69630228D1 (de) 2003-11-06
WO1997005623A1 (en) 1997-02-13
EP0842514A1 (de) 1998-05-20
KR19990036007A (ko) 1999-05-25
EP0842514B1 (de) 2003-10-01
KR100308745B1 (ko) 2001-11-02
JP3548830B2 (ja) 2004-07-28
US5617350A (en) 1997-04-01
JPH10510659A (ja) 1998-10-13

Similar Documents

Publication Publication Date Title
KR100904352B1 (ko) 비휘발성 메모리 장치에서의 다중 레벨 프로그래밍
KR950006867A (ko) 페이지 소거 구조를 갖는 플래시 이이피롬 어레이용 독립 어레이 접지
KR100822805B1 (ko) 다중 배속 동작 모드를 가지는 플래시 메모리 장치
KR920018766A (ko) 불휘발성 반도체 기억장치
KR970023451A (ko) 불휘발성 반도체 메모리 장치
ATE251329T1 (de) Flash-speichersystem mit reduzierten störungen und verfahren dazu
ATE229220T1 (de) Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür
EP1316964A3 (de) Nichtflüchtiger Halbleiterspeicher und diesen verwendendes Speichersystem
ATE169766T1 (de) Verfahren zur programmierung von flash eeprom- zellenmatrizen
US6359810B1 (en) Page mode erase in a flash memory array
EP1891644A1 (de) Selektive, langsam programmierbare konvergenz in einer flash-speichervorrichtung
KR970051349A (ko) 비휘발성 반도체 메모리 및 과소거된 메모리셀의 임계 전압 상승 방법
TW200511318A (en) Method and apparatus for emulating an electrically erasable programmable read only memory (EEPROM) using non-volatile floating gate memory cells
KR960006048A (ko) 반도체 불휘발성 기억장치
JPS5792488A (en) Nonvolatile memory
KR970051330A (ko) 페이지 단위의 소거락
EP0632464B1 (de) Speicherzellen-Stromleseverfahren in Mikrosteuergerät
EP0960423B1 (de) Wiederprogrammierbare speichereinrichtung mit variablem seitenformat
KR900010792A (ko) 전기적으로 소거와 프로그램이 가능한 판독전용 메모리
ATE209819T1 (de) Fortgeschrittene programmierverifikation für flash-speicher mit seitenmodus
JP2007188547A (ja) 不揮発性半導体記憶装置
KR970051339A (ko) 다수상태의 불휘발성 반도체 메모리 장치
KR970076869A (ko) 과소거될지 여부를 각각 점검하는 메모리 셀용 진단 포텐셜 발생기를 갖는 비휘발성 반도체 기억장치
KR0142637B1 (ko) 플래쉬 메모리 장치
KR0172741B1 (ko) 플래쉬 메모리 장치

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties